CN102211949A - Semi-conductor material combined with In2O3 polygonal layering tower-shaped nano structure on Si wafer and preparation method thereof - Google Patents
Semi-conductor material combined with In2O3 polygonal layering tower-shaped nano structure on Si wafer and preparation method thereof Download PDFInfo
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- CN102211949A CN102211949A CN 201010145341 CN201010145341A CN102211949A CN 102211949 A CN102211949 A CN 102211949A CN 201010145341 CN201010145341 CN 201010145341 CN 201010145341 A CN201010145341 A CN 201010145341A CN 102211949 A CN102211949 A CN 102211949A
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Abstract
The invention discloses a semi-conductor material combined with an In2O3 polygonal layering tower-shaped nano structure on a Si wafer and a preparation method thereof. The semi-conductor material comprises a substrate, wherein the substrate is made of the Si wafer, and an In2O3 crystal is grown on the surface of the substrate; and the In2O3 crystal has 4-6 angles, the distance between peaks of adjacent angles is 17-19 mu m, and the length of each angle is 8-10 mu m. In the preparation method, In particles are used as a raw material, and the In2O3 polygonal layering tower-shaped nano structure is obtained by utilizing a thermal evaporation method. The method has the advantages of low cost, low growth temperature, high repeatability and the like, can be combined with the current mature semi-conductor integrated circuit technology, and is suitable for development of integrated nano optoelectronic devices.
Description
Technical field
The present invention relates to photoelectron material, semiconductor materials and devices technical field, specifically, the present invention relates to compound In on silicon chip
2O
3Semi-conducting material of polygonal layering tower-shaped nanostructured and preparation method thereof.
Background technology
In
2O
3Be a kind of broad-band gap transparent semiconductor material, its direct band gap has good electric conductivity and higher light transmittance in 3.55～3.75eV scope.Since its unique electricity, chemistry and optical property, In
2O
3Has widely application space in fields such as chemistry, bio-sensing, solar cell, photocatalysis, actuator, photoelectron and FPD.
Recently, people utilize the whole bag of tricks (solwution method, molecular beam epitaxy, pulsed laser deposition, metal-organic chemical vapor deposition equipment etc.) to prepare various In
2O
3Nanostructured, nano wire for example, nanobelt, nano square, octahedron, nanometer arrow etc., and the photoelectric characteristic of these nanostructureds studied.But the method that can be applied to scale operation seldom, and severe reaction conditions, and production cost is high.
Summary of the invention
One of purpose of the present invention be to provide a kind of on silicon chip compound In
2O
3The semi-conducting material of polygonal layering tower-shaped nanostructured comprises silicon chip substrate and is grown in the In of described substrate surface
2O
3Crystal.Wherein, described In
2O
3Crystal is polygonal layering tower-shaped nanostructured.
Provided by the invention on silicon chip compound In
2O
3The level that the semi-conducting material of polygonal layering tower-shaped nanostructured, this nanostructured have clearly changes, and has periodically described In
2O
3Crystal has 4～6 angles, and the distance between the adjacent angular summit is 17～19 μ m, and the length at each angle is 8～10 μ m.Described periodic In provided by the invention
2O
3Polygonal layering tower-shaped nanostructured, report in the world still belongs to the first time.
Second purpose of the present invention is to be provided at compound In on the silicon chip
2O
3The preparation method of the semi-conducting material of polygonal layering tower-shaped nanostructured is to solve existing In
2O
3Preparation method of nano material condition harshness, the problem that cost is high provides a kind of low cost, and high duplication is applicable to the new method of large-scale industrial production.
Preparation is compound In on silicon chip
2O
3The method of the semi-conducting material of polygonal layering tower-shaped nanostructured comprises the steps:
A, the In particle is put in the quartz boat as the source, the silicon chip after cleaning is covered on quartz boat, the vertical range in silicon chip and source is 4～10mm;
B, quartz boat is put into the middle part of the tubular type growth furnace of the horizontal positioned that is heated to 600～800 ℃ in advance;
C, pass into inert gas Ar as carrier gas, under atmospheric pressure, react, obtain product.
Wherein, the purity of In particulate described in the described step a is 99.999%.
Wherein, the flow of the rare gas element Ar that feeds described in the described step c is 0.2L/min; The described reaction times under atmospheric pressure is 180～240min.
Wherein, the tubular type growth furnace of described horizontal positioned is made up of the different pipe of two root radiuses, and big alumina tube length is 70～100cm, and diameter is 6～10cm; Little silica tube length is 50～80cm, and diameter is 3～5cm.During reaction, small-bore pipe is inserted in the heavy caliber pipe, be reflected in the tubule and carry out, and carrier gas is directly to be passed in the small-bore pipe.
Preparation is compound In on silicon chip
2O
3The method of the semi-conducting material of layering bar-shaped nanostructure, concrete steps comprise as follows:
A, silicon chip is cleaned up, be cut into several small pieces then;
B, the tubular type growth furnace of horizontal positioned is heated to 600～800 ℃ with the speed of 5 ℃/min;
C, the In particle of purity 99.999% is put in the quartz boat as the source, the clean silicon chip of small pieces is covered on quartz boat, collect resultant of reaction as substrate, the vertical range in silicon chip and source is 4～10mm;
D, quartz boat is put into the middle part of the horizontal pipe furnace that heats in advance;
E, feed flow be the rare gas element Ar of 0.2L/min as carrier gas, under atmospheric pressure, react 180～240min;
F, taking-up quartz boat and silicon chip, face length has the flaxen material of one deck on silicon chip.
The present invention passes through to change some parameters in the thermal evaporation process, such as gas flow, and reaction temperature, periodic In has been synthesized in the control of distance between silicon chip and the source
2O
3Polygonal layering tower-shaped nanostructured.With respect to former synthetic nanostructure, outstanding feature of the present invention is: (1) growth temperature is low, and 800 ℃ of the highest needs have reduced the requirement to equipment; (2) put silicon chip substrate position difference.Many synthetic methods all are placed on the dirty of air-flow to silicon substrate, with the source at same level attitude, the present invention then is placed directly in a certain position on the vertical direction with the source to silicon chip; (3) pressure only need be normal pressure; (4) do not need to introduce any catalyzer; (5) less demanding to carrier gas only needs Ar just passable, do not need to add O
2Etc. other gas; (6) method is simple, and cost is low, good reproducibility, and be large-area growth.And the present invention adopts silicon chip as substrate, with In
2O
3Polygonal layering tower-shaped nanostructure growth can in conjunction with at present ripe semiconductor silicon integrated circuit technology, be suitable for the development of integrated nanometer opto-electronic device on silicon substrate.
Description of drawings
Fig. 1 is the X-ray diffractogram of polygonal layering tower shape nanostructure
Fig. 1 shows that all peaks all are In
2O
3The peak, exist without any impurity peaks
Fig. 2 is the SEM figure of a large amount of polygonal layering tower shape nanostructures
Fig. 2 shows In
2O
3Distance between the crystal adjacent angular summit is 17～19 μ m, and the length at each angle is 8～10 μ m
Fig. 3 is the SEM figure of the magnification of polygonal layering tower shape nanostructure
Fig. 3 shows that each polygonal layering tower shape nanostructure has 4～6 angles
Embodiment
Embodiment 1
Preparation is compound In on silicon chip
20
3The semi-conducting material of polygonal layering tower-shaped nanostructured, concrete steps are as follows:
A, silicon chip is cleaned up, be cut into several small pieces then;
B, the tubular type growth furnace of horizontal positioned is heated to 600 ℃ with the speed of 5 ℃/min;
C, (purity: 99.999%) be put in the quartz boat as the source, the clean silicon chip of small pieces is covered on quartz boat, collect resultant of reaction as substrate, the vertical range in silicon chip and source is 5mm with the In particle;
D, quartz boat is put into the middle part of the horizontal pipe furnace that heats in advance;
E, pass into flow be the inert gas Ar of 0.2L/min as carrier gas, under atmospheric pressure, react 240min;
F, taking-up quartz boat and silicon chip, face length has the flaxen material of one deck on silicon chip, promptly makes material requested.
Detect prepared material, detected result as shown in Figure 1, 2, 3.Fig. 1 shows that all peaks all are In
2O
3The peak, exist without any impurity peaks.Fig. 2 shows In
2O
3Distance between the crystal adjacent angular summit is 17～19 μ m, and the length at each angle is 8～10 μ m.Fig. 3 shows that each polygonal layering tower shape nanostructure has 4～6 angles.
Preparation is compound In on silicon chip
2O
3The semi-conducting material of polygonal layering tower-shaped nanostructured, concrete steps are as follows:
A, silicon chip is cleaned up, be cut into several small pieces then;
B, the tubular type growth furnace of horizontal positioned is heated to 800 ℃ with the speed of 5 ℃/min;
C, (purity: 99.999%) be put in the quartz boat as the source, the clean silicon chip of small pieces is covered on quartz boat, collect resultant of reaction as substrate, the vertical range in silicon chip and source is 8mm with the In particle;
D, quartz boat is put into the middle part of the horizontal pipe furnace that heats in advance;
E, pass into flow be the inert gas Ar of 0.2L/min as carrier gas, under atmospheric pressure, react 180min;
F, taking-up quartz boat and silicon chip, face length has the flaxen material of one deck on silicon chip, promptly makes material requested.
Detect prepared material, detected result as shown in Figure 1, 2, 3.Fig. 1 shows that all peaks all are In
2O
3The peak, exist without any impurity peaks.Fig. 2 shows In
2O
3Distance between the crystal adjacent angular summit is 17～19 μ m, and the length at each angle is 8～10 μ m.Fig. 3 shows that each polygonal layering tower shape nanostructure has 4～6 angles.
Claims (7)
1. compound In on silicon chip
2O
3The semi-conducting material of polygonal layering tower-shaped nanostructured is characterized in that, comprises silicon chip substrate and is grown in the In of described substrate surface
2O
3Crystal.
According to claim 1 on silicon chip compound In
2O
3The semi-conducting material of polygonal layering tower-shaped nanostructured is characterized in that, described In
2O
3Crystal is polygonal layering tower-shaped nanostructured.
According to claim 2 on silicon chip compound In
2O
3The semi-conducting material of polygonal layering tower-shaped nanostructured is characterized in that, described In
2O
3Crystal has 4～6 angles, and the distance between the adjacent angular summit is 17～19 μ m, and the length at each angle is 8～10 μ m.
4. preparation is characterized in that as the method for semiconductor material as described in the claim 1,2 or 3, comprises the steps:
A, the In particle is put in the quartz boat as the source, the silicon chip after cleaning is covered on quartz boat, the vertical range in silicon chip and source is 4～10mm;
B, quartz boat is put into the middle part of the tubular type growth furnace of the horizontal positioned that is heated to 600～800 ℃ in advance;
C, pass into inert gas Ar as carrier gas, under atmospheric pressure, react, obtain product.
5. method according to claim 4 is characterized in that, the purity of In particulate described in the described step a is 99.999%.
6. method according to claim 4 is characterized in that, the flow of the rare gas element Ar that feeds described in the described step c is 0.2L/min; The described reaction times under atmospheric pressure is 180～240min.
7. method according to claim 4 is characterized in that, the tubular type growth furnace of described horizontal positioned is made up of the different pipe of two root radiuses, and big alumina tube length is 70～100cm, and diameter is 6～10cm; Little silica tube length is 50～80cm, and diameter is 3～5cm.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010145341 CN102211949B (en) | 2010-04-12 | 2010-04-12 | Semi-conductor material combined with In2O3 polygonal layering tower-shaped nano structure on Si wafer and preparation method thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010145341 CN102211949B (en) | 2010-04-12 | 2010-04-12 | Semi-conductor material combined with In2O3 polygonal layering tower-shaped nano structure on Si wafer and preparation method thereof |
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|---|---|
| CN102211949A true CN102211949A (en) | 2011-10-12 |
| CN102211949B CN102211949B (en) | 2012-12-19 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103274443A (en) * | 2013-04-22 | 2013-09-04 | 华东师范大学 | Quadrangular leaf-shaped Cu2O-ZnO composite nano-structural semiconductor material, and preparation method thereof |
-
2010
- 2010-04-12 CN CN 201010145341 patent/CN102211949B/en not_active Expired - Fee Related
Non-Patent Citations (1)
| Title |
|---|
| 《中国优秀硕士学位论文全文数据库工程科技I辑》 20090315 李强 In2O3纳米材料的制备和表征及发光特性研究 第12-21页 1-3 , 第3期 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103274443A (en) * | 2013-04-22 | 2013-09-04 | 华东师范大学 | Quadrangular leaf-shaped Cu2O-ZnO composite nano-structural semiconductor material, and preparation method thereof |
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