CN101875565B - Silicon slice-In2O3 flower-like nano structure compounded semiconductor material and preparation method thereof - Google Patents
Silicon slice-In2O3 flower-like nano structure compounded semiconductor material and preparation method thereof Download PDFInfo
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- CN101875565B CN101875565B CN2010101719610A CN201010171961A CN101875565B CN 101875565 B CN101875565 B CN 101875565B CN 2010101719610 A CN2010101719610 A CN 2010101719610A CN 201010171961 A CN201010171961 A CN 201010171961A CN 101875565 B CN101875565 B CN 101875565B
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Abstract
The invention discloses a silicon slice-In2O3 flower-like nano structure compounded semiconductor material and a preparation method thereof. The material comprises a substrate, wherein the substrate is a silicon slice, and In2O3 crystals are grown on the surface of the substrate; and the In2O3 crystals have a flower-like nano structure which is formed by connecting the bottom parts of burred rod-like nano structures, the length of the In2O3 burred rod-like nano structures is 40 to 80 micrometers, the length of the burred nano structures is 0.8 to 4.6 micrometers, and the burred nano structures are arranged on the surfaces of the rod-like nano structures orderly. In the preparation method, Sn powder, In2O3 powder and C powder are used as a raw material, and the In2O3 flower-like nano structures are grown by a thermal evaporation method. The surfaces of the flower-like structures of the invention have a large amount of nano tips which can be used as emitting points, and therefore can serve as good field emitting cathode material. The material has the advantages of low cost, high repeatability, and the like. By combining with the conventional mature semiconductor silicon integrated circuit process, the material is suitable to be used for preparing integrated nano optoelectronic devices.
Description
Technical field
The present invention relates to photoelectron material, semiconductor material and device technology field, specifically a kind of on silicon chip compound In
2O
3Semiconductor material of flower-like nanostructure and preparation method thereof.
Background technology
In
2O
3Be a kind of broad-band gap transparent semiconductor material, its direct band gap has good electrical conductivity and higher transmittance in 3.55～3.75eV scope.Since its unique electricity, chemistry and optical property, In
2O
3Has application space widely in fields such as chemistry, bio-sensing, solar cell, photochemical catalysis, performer, photoelectron and FPD.
Recently, people utilize the whole bag of tricks (solution method, molecular beam epitaxy, pulsed laser deposition, metal-organic chemical vapor deposition equipment etc.) to prepare various In
2O
3Nanostructure, nano wire for example, nano belt, the nanometer square, octahedron, nanometer arrow etc., and the photoelectric characteristic of these nanostructures studied.The result shows; Have those most advanced and sophisticated nanostructures and launch electronics more easily; Yet in the disclosed prior art, all nanostructures are because the further raising of field emission performance often all can only have been limited from top emission electronic in its slick surface extremely so far.
Summary of the invention
One of the object of the invention be to provide a kind of on silicon chip compound In
2O
3The semiconductor material of flower-like nanostructure, this material not only has nano level tip, and the thorn-like nanostructure that on trunk, is also distributing a large amount of, has overcome the deficiency during the emission on the scene of many nanostructures is used in the prior art.
Second purpose of the present invention is to be provided at compound In on the silicon chip
2O
3The preparation method of the semiconductor material of flower-like nanostructure is to solve existing In
2O
3The preparation method of nano material condition is harsh, and the problem that cost is high provides a kind of low cost, the novel method of high duplication.
The objective of the invention is to realize like this:
A kind of on silicon chip compound In
2O
3The semiconductor material of flower-like nanostructure, characteristics are: this material comprises silicon chip substrate and is grown in the In of this substrate surface
2O
3Crystal; Said In
2O
3Crystal is a flower-like nanostructure, and its petal is barbed bar-shaped nanostructure, and the length of rod is 40～80 μ m, and the length of thorn is 0.8～4.6 μ m, and the thorn-like nanostructure fitly is arranged on the surface of bar-shaped nanostructure.
The preparation method of above-mentioned semiconductor material comprises the steps:
A, with Sn powder, In
2O
3Powder and C powder are put in the quartz boat as the source with 1: 10: 30 mixed in molar ratio, and the silicon chip after cleaning is covered on quartz boat, and the vertical range in silicon chip and source is 4～10mm;
B, quartz boat placed be heated to 700～1000 ℃, the middle part of the tubular type reactors of horizontal positioned in advance;
Feed rare gas element Ar in c, the tubular type reactors as carrier gas, reaction 120～240min under atmospheric pressure;
D, taking-up quartz boat and silicon chip obtain compound In on silicon chip
2O
3The semiconductor material of flower-like nanostructure;
Wherein: the purity of the powder of Sn described in the step a is 99.5%; Said In
2O
3The purity of powder is analytical pure; The purity of said C powder is spectroscopically pure; The flow of the rare gas element Ar that feeds described in the step c is 0.2～0.6L/min.
The tubular type reactors of said horizontal positioned is made up of two pipes, and wherein a pipe range is 70～100cm, and diameter is 6～10cm; Another root pipe range is 50～80cm, and diameter is 3～5cm; During reaction, small-bore pipe inserts in the large-diameter pipe, and carrier gas is directly to be passed in the small-bore pipe.
The present invention passes through to change to some parameters in the thermal evaporation process, like inductor, and gas flow, temperature of reaction, In has been synthesized in the control of distance between silicon chip and the source
2O
3Flower-like nanostructure.With respect to prior art synthetic nanostructure, outstanding feature of the present invention is: (1) institute silicon chip substrate position of putting is different.Many compound methods all are placed on the dirty of air-flow to silicon substrate, with the source at same level attitude, the present invention then is placed directly in a certain position on the vertical direction with the source to silicon chip; (2) pressure need be normal pressure only, has reduced the requirement to equipment; (3) less demanding to carrier gas only needs Ar just passable, need not add O
2Etc. other gas; (4) method is simple, and cost is low, good reproducibility.The present invention adopts silicon chip as substrate, with In
2O
3Flower-like nanostructure is grown on the silicon substrate, and the nanotip that can be used as launching site is in a large number arranged on the flower-like nanostructure surface, can be used as good filed emission cathode material.The present invention can combine present sophisticated semiconductor silicon integrated circuit technology, is suitable for the preparation of integrated nanometer opto-electronic device.
Description of drawings
Fig. 1 is the X-ray diffractogram of the embodiment of the invention 1, shows among the figure that all peaks all are In
2O
3The peak, do not have Sn or other impurity peaks to exist.
Fig. 2 is the SEM figure of the embodiment of the invention 1 a large amount of flower-like nanostructures, shows In among the figure
2O
3Crystal is the flower-like nanostructure that barbed bar-shaped nanostructure bottom is joined together to form.
Fig. 3 is the SEM figure of the magnification of the embodiment of the invention 1, shows In among the figure
2O
3Barbed bar-shaped nanostructure length is 40～80 μ m, and thorn-like nanostructure length is 0.8～4.6 μ m, and the thorn-like nanostructure fitly is arranged on the surface of bar-shaped nanostructure.
Embodiment
Embodiment 1
A, clean up silicon chip, be cut into 1.5cm * 1.5cm small pieces then;
B, the tubular type reactors of horizontal positioned is heated to 900 ℃ with the speed of 5 ℃/min;
C, with 0.2g Sn powder, 2g In
2O
3Powder and the mixing of 6g C powder are put in the quartz boat as the source, cover the clean silicon chip of small pieces on quartz boat, collect resultant of reaction as substrate, and the vertical range in silicon chip and source is 4mm;
D, be put into quartz boat at the middle part of the horizontal pipe furnace that heats in advance;
E, feed flow be the rare gas element Ar of 0.5L/min as carrier gas, under atmospheric pressure, react 240min;
F, taking-up quartz boat and silicon chip, face length has the flaxen material of one deck on silicon chip, promptly makes material requested.
Detect prepared material, detected result is like Fig. 1,2, shown in 3.Fig. 1 shows that all peaks all are In
2O
3The peak, do not have Sn or other impurity peaks to exist.Fig. 2 shows In
2O
3Crystal is the flower-like nanostructure that barbed bar-shaped nanostructure bottom is joined together to form.Fig. 3 shows In
2O
3Barbed bar-shaped nanostructure length is 40～80 μ m, and thorn-like nanostructure length is 0.8～4.6 μ m, and the thorn-like nanostructure fitly is arranged on the surface of bar-shaped nanostructure.
A, clean up silicon chip, be cut into 1.8cm * 1.8cm small pieces then;
B, the tubular type reactors of horizontal positioned is heated to 850 ℃ with the speed of 5 ℃/min;
C, with 0.1g Sn powder, 1g In
2O
3Powder and the mixing of 3g C powder are put in the quartz boat as the source, cover the clean silicon chip of small pieces on quartz boat, collect resultant of reaction as substrate, and the vertical range in silicon chip and source is 5mm;
D, be put into quartz boat at the middle part of the horizontal pipe furnace that heats in advance;
E, feed flow be the rare gas element Ar of 0.3L/min as carrier gas, under atmospheric pressure, react 200min;
F, taking-up quartz boat and silicon chip, face length has the flaxen material of one deck on silicon chip, promptly makes material requested.
Claims (3)
1. compound In on silicon chip
2O
3The semiconductor material of flower-like nanostructure is characterized in that: this material comprises silicon chip substrate and is grown in the In of this substrate surface
2O
3Crystal; Said In
2O
3Crystal is a flower-like nanostructure, and its petal is barbed bar-shaped nanostructure, and the length of rod is 40～80 μ m, and the length of thorn is 0.8～4.6 μ m, and the thorn-like nanostructure fitly is arranged on the surface of bar-shaped nanostructure.
2. the preparation method of the said semiconductor material of claim 1, it is characterized in that: this method comprises the steps:
A, with Sn powder, In
2O
3Powder and C powder are put in the quartz boat as the source with 1: 10: 30 mixed in molar ratio, and the silicon chip after cleaning is covered on quartz boat, and the vertical range in silicon chip and source is 4～10mm;
B, quartz boat placed be heated to 700～1000 ℃, the middle part of the tubular type reactors of horizontal positioned in advance;
Feed rare gas element Ar in c, the tubular type reactors as carrier gas, reaction 120～240min under atmospheric pressure;
D, taking-up quartz boat and silicon chip obtain compound In on silicon chip
2O
3The semiconductor material of flower-like nanostructure;
Wherein: the purity of the powder of Sn described in the step a is 99.5%; Said In
2O
3The purity of powder is analytical pure; The purity of said C powder is spectroscopically pure; The flow of the rare gas element Ar that feeds described in the step c is 0.2～0.6L/min.
3. preparation method according to claim 2 is characterized in that the tubular type reactors of said horizontal positioned is made up of two pipes, and wherein a pipe range is 70～100cm, and diameter is 6～10em; Another root pipe range is 50～80cm, and diameter is 3～5cm; During reaction, small-bore pipe inserts in the large-diameter pipe, and carrier gas is directly to be passed in the small-bore pipe.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010101719610A CN101875565B (en) | 2010-05-11 | 2010-05-11 | Silicon slice-In2O3 flower-like nano structure compounded semiconductor material and preparation method thereof |
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|---|---|---|---|
| CN2010101719610A CN101875565B (en) | 2010-05-11 | 2010-05-11 | Silicon slice-In2O3 flower-like nano structure compounded semiconductor material and preparation method thereof |
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| Publication Number | Publication Date |
|---|---|
| CN101875565A CN101875565A (en) | 2010-11-03 |
| CN101875565B true CN101875565B (en) | 2012-08-08 |
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| CN2010101719610A Expired - Fee Related CN101875565B (en) | 2010-05-11 | 2010-05-11 | Silicon slice-In2O3 flower-like nano structure compounded semiconductor material and preparation method thereof |
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| Country | Link |
|---|---|
| CN (1) | CN101875565B (en) |
-
2010
- 2010-05-11 CN CN2010101719610A patent/CN101875565B/en not_active Expired - Fee Related
Non-Patent Citations (2)
| Title |
|---|
| 吴萍等.In2O3纳米材料的制备和表征及发光特性研究.《汕头大学学报(自然科学版)》.2007,第22卷(第2期),第33-36页. * |
| 李强.In2O3纳米材料的制备和表征及发光特性研究.《中国优秀硕士学位论文全文数据库工程科技I辑》.2009,(第3期),第13-16页. * |
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