CN102208334B - The preparation method of local oxidization termination ring of semiconductor device - Google Patents
The preparation method of local oxidization termination ring of semiconductor device Download PDFInfo
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- CN102208334B CN102208334B CN201110142012.4A CN201110142012A CN102208334B CN 102208334 B CN102208334 B CN 102208334B CN 201110142012 A CN201110142012 A CN 201110142012A CN 102208334 B CN102208334 B CN 102208334B
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Abstract
The present invention relates to a kind of preparation method of local oxidization termination ring of semiconductor device, comprise the steps: that the fringe region of semiconductor device on a silicon substrate forms pad oxide and silicon nitride layer; Etch described pad oxide, described silicon nitride layer and described silicon substrate, form multiple groove; Silicon in described groove is carried out selective oxidation, forms field oxide; Remove described pad oxide and described silicon nitride layer.The local oxidization termination ring of semiconductor device adopting method of the present invention to prepare has higher puncture voltage, can be good at the breakdown performance improving semiconductor device.
Description
Technical field
The present invention relates to the preparation method of a kind of local oxidization termination ring of semiconductor device (LOCOSTermination), particularly relate to the preparation method of a kind of deep layer for high-voltage semi-conductor device (Buried) local oxidization termination ring.
Background technology
In modem semi-conductor devices manufacturing process, semiconductor device resistance to puncture (Breakdown) performance more and more expect by people.In order to improve the puncture voltage (BreakdownVoltage of semiconductor device, BV), semiconductor device has termination ring (Termination) structure, be enclosed in semiconductor device active region (activearea) around, avoid the marginal portion of semiconductor device to be punctured in early days.The termination ring of prior art adopts the method for selective oxidation to be formed usually, but, the thickness of the field oxide (FieldOxide, FOX) adopting the partial oxidation process preparation of prior art to be formed is not enough, thus affects the breakdown performance of semiconductor high-voltage device.
Summary of the invention
The object of the present invention is to provide the preparation method of a kind of deep layer for high-voltage semi-conductor device (Buried) local oxidization termination ring.
A preparation method for local silicon oxidation isolation structure, comprises the steps: that the fringe region of semiconductor device on a silicon substrate forms pad oxide and silicon nitride layer; Etch described pad oxide, described silicon nitride layer and described silicon substrate, form multiple groove; Silicon in described groove is carried out selective oxidation, forms field oxide; Remove described pad oxide and described silicon nitride layer.
The preferred a kind of technical scheme of said method, the proportion of the width of the trench wall between the width of described groove and adjacent two grooves is 1: 3 to 3: 1.
The preferred a kind of technical scheme of said method, the ratio of the width of the trench wall between the width of described groove and adjacent two grooves is 3: 1.
The preferred a kind of technical scheme of said method, the width of described groove is 1um, and the width of the trench wall between adjacent two grooves is 0.5um.
The preferred a kind of technical scheme of said method, the width of described groove is 1um, and the width of the trench wall between adjacent two grooves is 3um.
The preferred a kind of technical scheme of said method, the width of described groove is 2um, and the width of the trench wall between adjacent two grooves is 2um.
The preferred a kind of technical scheme of said method, the width of described groove is 3um, and the width of the trench wall between adjacent two grooves is 1um.
The preferred a kind of technical scheme of said method, the thickness of described field oxide is 6.5um.
The preferred a kind of technical scheme of said method, described semiconductor device is high-voltage semi-conductor device.
Compared with prior art, the preparation method of local oxidization termination ring of semiconductor device of the present invention etches and forms multiple groove on the silicon substrate of semiconductor device edge, then the silicon in described groove is carried out selective oxidation, forms field oxide.Adopt the preparation method of local oxidization termination ring of semiconductor device of the present invention, can be good at the breakdown performance improving semiconductor device.
Accompanying drawing explanation
Fig. 1 is the flow chart of the preparation method of local oxidization termination ring of semiconductor device of the present invention.
Fig. 2, Fig. 3 are the schematic diagrames of first embodiment of the preparation method of local oxidization termination ring of semiconductor device of the present invention.
Fig. 4, Fig. 5 are the schematic diagrames of second embodiment of the preparation method of local oxidization termination ring of semiconductor device of the present invention.
Fig. 6, Fig. 7 are the schematic diagrames of the 3rd embodiment of the preparation method of local oxidization termination ring of semiconductor device of the present invention.
Fig. 8, Fig. 9 are the schematic diagrames of the 4th embodiment of the preparation method of local oxidization termination ring of semiconductor device of the present invention.
Figure 10 is the test performance curve chart of the local oxidization termination ring of semiconductor device adopting method of the present invention to prepare.
Embodiment
For making the object, technical solutions and advantages of the present invention clearly, below in conjunction with accompanying drawing, the present invention is described in further detail.
Refer to Fig. 1, Fig. 1 is preparation method's flow chart of local oxidization termination ring of semiconductor device of the present invention.Preferably, the preparation method of local oxidization termination ring of semiconductor device of the present invention is the preparation method of deep layer local oxidization termination ring of semiconductor device, in high-voltage semi-conductor device.The preparation method of local oxidization termination ring of semiconductor device of the present invention comprises the steps:
The fringe region of semiconductor device on a silicon substrate forms pad oxide and silicon nitride layer.Described pad oxide for the protection of the surface of described substrate by the mechanical pressure in subsequent technique.
Pad oxide described in dry etching and described silicon nitride layer, and etch described silicon substrate further, described silicon substrate forms multiple groove.Preferably, the proportion of the width of the trench wall between the width of described groove and adjacent two grooves is 1: 3 ~ 3: 1.
The silicon chip forming multiple groove is sent in hot boiler tube, makes the silicon in described groove carry out selective oxidation, form field oxide.
Wet etching removes the described pad oxide of described surface of silicon and described silicon nitride layer, forms local oxidization termination ring of semiconductor device.
After forming described local oxidization termination ring, field plate (FieldPlate) can also be formed on the surface of described termination ring.
Fig. 2, Fig. 3 are the schematic diagrames of first embodiment of the preparation method of local oxidization termination ring of semiconductor device of the present invention.Pad oxide 13 is illustrate only in Fig. 2.In the present embodiment, the width that silicon substrate 11 etches the groove 17 of formation is 1um, and the width of the trench wall 19 between adjacent two grooves 17 is 0.5um, as shown in Figure 2.Silicon chip shown in Fig. 2 is sent in hot boiler tube, makes the silicon in described groove 17 carry out selective oxidation, form field oxide 12.The field oxide 12 adopting the method for the present embodiment to prepare can reach more than 6.5um, and therefore, the local oxidization termination ring adopting the method for the present embodiment to prepare has higher puncture voltage.But, when the width of described groove 17 is less than 3um, in the field oxide 12 adopting the method for the present embodiment to be formed, space (Void) 14 can be formed, as shown in Figure 3, be unfavorable for the breakdown performance improving semiconductor device.
Fig. 4, Fig. 5 are the schematic diagrames of second embodiment of the preparation method of local oxidization termination ring of semiconductor device of the present invention.Pad oxide is illustrate only in Fig. 4.In the present embodiment, the width etching the groove 27 of formation is on a silicon substrate 1um, and the width of the trench wall 29 between adjacent two grooves 27 is 3um, as shown in Figure 4.Silicon chip shown in Fig. 4 is sent in hot boiler tube, makes the silicon in described groove 27 carry out selective oxidation, form field oxide 22.The field oxide 22 adopting the method for the present embodiment to prepare can reach more than 6.5um, and therefore, the local oxidization termination ring adopting the method for the present embodiment to prepare has higher puncture voltage.But when the width of described trench wall 29 is greater than 1um, a part of silicon 24 of described trench wall 29 corresponding position can not be substantially oxidized, as shown in Figure 5, the breakdown performance improving semiconductor device is unfavorable for.
Fig. 6, Fig. 7 are the schematic diagrames of the 3rd embodiment of the preparation method of local oxidization termination ring of semiconductor device of the present invention.Pad oxide is illustrate only in Fig. 6.In the present embodiment, the width etching the groove 37 of formation is on a silicon substrate 2um, and the width of the trench wall 39 between adjacent two grooves 37 is 2um, as shown in Figure 6.Silicon chip shown in Fig. 6 is sent in hot boiler tube, makes the silicon in described groove 37 carry out selective oxidation, form field oxide 32.The field oxide 32 adopting the method for the present embodiment to prepare can reach more than 6.5um, and therefore, the local oxidization termination ring adopting the method for the present embodiment to prepare has higher puncture voltage.But when the width of described trench wall 39 is greater than 1um, a part of silicon 34 of described trench wall 29 corresponding position can not be substantially oxidized, and as shown in Figure 7, but is slightly better than the second embodiment, be also unfavorable for the breakdown performance improving semiconductor device.
Fig. 8, Fig. 9 are the schematic diagrames of the 4th embodiment of the preparation method of local oxidization termination ring of semiconductor device of the present invention.Pad oxide is illustrate only in Fig. 8.In the present embodiment, the width etching the groove 47 of formation is on a silicon substrate 3um, and the width of the trench wall 49 between adjacent two grooves 47 is 1um, as shown in Figure 8.Silicon chip shown in Fig. 8 is sent in hot boiler tube, makes the silicon in described groove 47 carry out selective oxidation, form field oxide 42.The field oxide 42 adopting the method for the present embodiment to prepare can reach more than 6.5um, and the silicon of described trench wall 29 corresponding position is substantially oxidized, as shown in Figure 9, therefore, the local oxidization termination ring of semiconductor device adopting the method for the present embodiment to prepare has higher puncture voltage, is conducive to the breakdown performance improving semiconductor device.
The local oxidization termination ring of semiconductor device adopting method of the present invention to prepare has higher puncture voltage, can be good at the breakdown performance improving semiconductor device.Figure 10 is the test performance curve chart of the local oxidization termination ring of semiconductor device adopting method of the present invention to prepare, described tested local oxidization termination ring is provided with field plate, the thickness of the field oxide of described local oxidization termination ring is 6.5um, and the puncture voltage BDVSS of local oxidization termination ring of the present invention can reach 1133V.In Figure 10, curve 51 represents the distribution curve of electric field (ElectronicField) along the knot end (junctionbottom), curve 52 represents the distribution curve of electronic potential (ElectronicPotential) along the knot end, can be reflected further by figure, the local oxidization termination ring of semiconductor device adopting method of the present invention to prepare has higher puncture voltage, can be good at the breakdown performance improving semiconductor device.
Many embodiments having very big difference can also be formed when without departing from the spirit and scope of the present invention.Should be appreciated that except as defined by the appended claims, the present invention is not limited to specific embodiment described in the description.
Claims (4)
1. a preparation method for local oxidization termination ring of semiconductor device, is characterized in that, comprises the steps:
The fringe region of semiconductor device on a silicon substrate forms pad oxide and silicon nitride layer;
Etch described pad oxide, described silicon nitride layer and described silicon substrate, form multiple groove, the ratio of the width of the trench wall between the width of described groove and adjacent two grooves is 3:1;
Silicon in described groove is carried out selective oxidation, forms field oxide;
Remove described pad oxide and described silicon nitride layer.
2. the preparation method of local oxidization termination ring of semiconductor device as claimed in claim 1, it is characterized in that, the width of described groove is 3um, and the width of the trench wall between adjacent two grooves is 1um.
3. the preparation method of local oxidization termination ring of semiconductor device as claimed in claim 1, it is characterized in that, the thickness of described field oxide is 6.5um.
4. the preparation method of local oxidization termination ring of semiconductor device as claimed in claim 1, it is characterized in that, described semiconductor device is high-voltage semi-conductor device.
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| CN106206403A (en) * | 2015-04-29 | 2016-12-07 | 北大方正集团有限公司 | The optimization method of location oxidation of silicon process |
| WO2018052445A1 (en) | 2016-09-19 | 2018-03-22 | Hewlett-Packard Development Company, L.P. | Termination ring with gapped metallic layer |
| CN112825301B (en) * | 2019-11-21 | 2022-08-12 | 东南大学 | Insulated gate bipolar transistor device and manufacturing method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US6509604B1 (en) * | 2000-01-26 | 2003-01-21 | Advanced Micro Devices, Inc. | Nitridation barriers for nitridated tunnel oxide for circuitry for flash technology and for LOCOS/STI isolation |
| CN101197397A (en) * | 2006-12-07 | 2008-06-11 | 三洋电机株式会社 | Semiconductor device and method of manufacturing the same |
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| JPH09205137A (en) * | 1996-01-25 | 1997-08-05 | Sony Corp | Method for forming element isolation region |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US6509604B1 (en) * | 2000-01-26 | 2003-01-21 | Advanced Micro Devices, Inc. | Nitridation barriers for nitridated tunnel oxide for circuitry for flash technology and for LOCOS/STI isolation |
| CN101197397A (en) * | 2006-12-07 | 2008-06-11 | 三洋电机株式会社 | Semiconductor device and method of manufacturing the same |
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