CN102207409A - Temperature detection circuit - Google Patents
Temperature detection circuit Download PDFInfo
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- CN102207409A CN102207409A CN2010101389714A CN201010138971A CN102207409A CN 102207409 A CN102207409 A CN 102207409A CN 2010101389714 A CN2010101389714 A CN 2010101389714A CN 201010138971 A CN201010138971 A CN 201010138971A CN 102207409 A CN102207409 A CN 102207409A
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Abstract
The invention discloses a temperature detection circuit, which comprises a general comparator comp, a switch tube m0, two reference current sources Iref1 and Iref2, a bipolar plug-and-play tube Q0, reference voltage Vref, a power supply VDD and an earth terminal, wherein the output Vout of the general comparator comp is a control signal, and the control signal is also connected with a grid of the switch tube m0; when the circuit is used for high-temperature detection, a value of the reference voltage Vref is determined by a set temperature upper limit; and when the circuit is used for low-temperature detection, the reference voltage Vref is replaced by reference voltage Vref', and a value of the reference voltage Vref' is determined by a set temperature lower limit; and by the circuit, the high-temperature detection circuit and the low-temperature detection circuit can be combined to detect a closed temperature area. In the temperature detection circuit, the influence of a window threshold value of a temperature detection hysteretic window with temperature, power supply voltage and a process is small, so the formed hysteretic window is more stable and the reliability of the circuit is high.
Description
Technical field
The present invention relates to a kind of analogue detection circuitry, relate to a kind of analogue detection circuitry especially based on temperature.
Background technology
At present, portable type electronic product is mainly powered through voltage stabilizer by lithium battery, all adopts power tube in these voltage stabilizers.The quality index of voltage stabilizer should be to be first principle with security, reliability; satisfy in the electrical technology index under the condition of normal request for utilization; work safely and reliably under rugged surroundings and catastrophic failure situation for making power supply; must design the kinds of protect circuit, such as holding circuits such as the soft start of preventing surge, overvoltage, excess temperature, overcurrents.For example, along with the continuous increase of SoC chip integrated functionality and scale and the fast development of portable use, the function of chip is more and more, and power consumption is increasing, causes the temperature of chip operation also more and more higher.But its reliability can reduce greatly when chip temperature is too high, even directly causes chip to produce hot stall.So thermal-shutdown circuit seems for power management chip and is even more important.Thermal-shutdown circuit is exactly a detection chip temperature constantly, if temperature surpasses the upper limit (T that is provided with
Off), will produce cut-off signals, if temperature drops to permissible value (T
On), will produce start signal.For preventing thermal oscillation, T
OffAnd T
OnCertain retarding window should be set, and all be at present to adopt hysteresis comparator to produce the temperature hysteresis window.
Be depicted as a kind of physical circuit figure of hysteresis comparator commonly used as Fig. 1 (a), its input threshold value is as shown in the formula shown in (1):
α=[(W/L) wherein
3/ (W/L)
2]=[(W/L)
4/ (W/L)
5], output can change when input process threshold value, and simultaneously, the input threshold value is change thereupon also, so once must get back to a threshold value before the change state in the output of comparer, is the input-output curve of this comparer as Fig. 1 (b), forward breakover point V
Trig+With negative sense turning point V
Trig-And two output voltage V
OhAnd V
OlConstitute hysteresis comparator.By formula (1) as can be known, manage the dimension scale of M4 with respect to PMOS pipe M2 and PMOS pipe M5 by changing PMOS pipe M3 and PMOS, the size that just can regulate retarding window, but need assurance α＞1, otherwise do not have hysteresis.
Hence one can see that, and existing traditional thermal-shutdown circuit all produces retarding window by hysteresis comparator, and the place one's entire reliance upon structure of hysteresis comparator of the retarding window that hysteresis comparator produces, i.e. the ratio of hysteresis comparator load pipe size.And load pipe size is easy to be subjected to the influence of process deviation and imbalance, thereby causes the instability of retarding window, influences the performance of thermal-shutdown circuit.
Summary of the invention
For solving the problems of the technologies described above, the present invention proposes a kind of temperature sensing circuit, this circuit is used for high temperature and detects, and comprises a general comparator comp, a switching tube m
0, two reference current source I
Ref1And I
Ref2, bipolar PNP pipe Q
0, a reference voltage V
RefWith a power supply V
DDAnd earth terminal; Wherein, switching tube m
0With reference current source I
Ref2After the series connection again with reference current source I
Ref1Be parallel to power supply V
DDWith bipolar PNP pipe Q
0Emitter between; This bipolar PNP pipe Q
0Base stage and collector hold with being connected to, its emitter also links to each other with the negative input end of general comparator comp, the positive termination reference voltage V of this general comparator comp
Ref, and output V
OutBe control signal, and this control signal also connects switching tube m
0Grid, reference voltage V
RefValue determine by the temperature upper limit that is provided with.
Described reference voltage V
RefDefinite method for as reference current source I
Ref2Place in circuit, and temperature bipolar PNP pipe Q during for the temperature upper limit that is provided with
0Emitter voltage equal reference voltage V
Ref
Described temperature sensing circuit is by regulating reference current source I
Ref2Size adjustment output V
OutThe size of retarding window in the curve of output.
The invention allows for a kind of temperature sensing circuit, be used for low temperature and detect, this circuit is identical with the circuit that high temperature detects, and just uses reference voltage V
Ref' replaced reference voltage V
Ref, and reference voltage V
Ref' value determine by the lowest temperature value that is provided with.
Described reference voltage V
Ref' definite method for as reference current source I
Ref2Bipolar PNP pipe Q when not place in circuit, and temperature is the lowest temperature value that is provided with
0Emitter voltage.
Described temperature sensing circuit is by regulating reference current source I
Ref2Size adjustment output V
OutThe size of retarding window in the curve.
A kind of temperature sensing circuit, this circuit comprises a high temperature testing circuit and a low temperature testing circuit, and one or the door, the input of the output control signal of described high temperature testing circuit and conduct of the output control signal of low temperature testing circuit or door, or the output of door is as the output control signal of this temperature sensing circuit;
This high temperature testing circuit is a circuit shown in the claim 1; The big I of retarding window in the output control signal curve of described high temperature testing circuit is regulated by the size of regulating second reference current source in the described high temperature testing circuit.
This low temperature testing circuit is a circuit shown in the claim 4.The big I of retarding window in the output control signal curve of described low temperature testing circuit is regulated by the size of regulating second reference current source in the described low temperature testing circuit.
Beneficial effect of the present invention shows that circuit structure of the present invention is simple, under the situation that does not increase any circuit complexity, utilized a switching tube and a reference current to realize the temperature hysteresis window, and the big I of this retarding window is by regulating the second reference current source I
Ref2Size regulate, easy to adjust.In addition, the window threshold value of retarding window of the present invention is less with the influence of temperature, supply voltage, technology, and therefore the retarding window that forms is more stable, the circuit reliability height.
On the other hand, the present invention can be applicable to high temperature and detects, and also can be applicable to low temperature and detect, and the higher limit of temperature and lower limit all can set arbitrarily, only needs to determine that according to the temperature value of setting threshold voltage just can realize.In addition also can be with the detection of high temperature testing circuit and low temperature testing circuit combination realization high and low temperature scope.
Description of drawings
Fig. 1 (a) is a kind of general hysteresis comparator circuit structural drawing;
Fig. 1 (b) is the input-output curve figure of general hysteresis comparator shown in Fig. 1 (a);
Fig. 2 is a physical circuit figure of the described temperature sensing circuit of the specific embodiment of the invention;
Fig. 3 is rise temperature hysteresis window change curve figure when reaching threshold value of the described temperature sensing circuit detected temperatures of the specific embodiment of the invention one;
Fig. 4 is that the specific embodiment of the invention one described temperature sensing circuit is applied to descend temperature hysteresis window change curve figure when reaching threshold value of detected temperatures.
Embodiment
Below in conjunction with accompanying drawing the specific embodiment of the present invention is elaborated.
Be illustrated in figure 2 as the particular circuit configurations of the specific embodiment of the invention one described temperature sensing circuit, this testing circuit comprises a general comparator comp, a switching tube m
0, two reference current source I
Ref1And I
Ref2, bipolar PNP pipe Q
0, a reference voltage V
Ref, wherein, switching tube m
0With reference current source I
Ref2After the series connection again with reference current source I
Ref1Be parallel to power supply V
DDWith bipolar PNP pipe Q
0Emitter between; This bipolar PNP pipe Q
0Base stage and collector hold with being connected to, its emitter also links to each other with the negative input end of general comparator comp, the positive termination reference voltage V of this general comparator comp
Ref, and output V
OutBe control signal, and this control signal gauge tap pipe m also
0Grid.
Wherein, switching tube m
0Be the positive-negative-positive field effect transistor, reference current source I
Ref1And I
Ref2All be and supply voltage and the irrelevant reference current of temperature, reference voltage V
RefAlso irrelevant with supply voltage and temperature, and the threshold voltage when be the change of general comparator comp state.
When temperature sensing circuit shown in this embodiment is applied to the high temperature detection, the temperature upper limit T that high temperature detects
OffCan set arbitrarily, when configuring temperature upper limit T
OffAfter, according to the temperature upper limit T that configures
OffDetermine the positive input terminal reference voltage V of general comparator comp
Ref, satisfy reference voltage V when being lower than temperature upper limit
RefValue less than the negative input end voltage V of general comparator comp
E, promptly the positive input terminal voltage of general comparator comp is less than its negative input end voltage, and then general comparator comp exports V
OutBe low level, switching tube m
0Conducting, the second reference current source I
Ref2In the access circuit, along with the rising of temperature, the negative input end voltage V of general comparator comp
EBegin to descend, be elevated to the higher limit T of setting when temperature
OffThe time, the negative input end voltage V of general comparator comp
ELess than its positive input terminal reference voltage V
Ref, the output V of general comparator comp then
OutBe high level, switching tube m
0End the second reference current source I
Ref2Be turned off.
Reference voltage V wherein
RefDefinite method be: because general comparator comp overturns when temperature rises to temperature upper limit, i.e. reference voltage V
RefEqual bipolar PNP pipe Q
0Emitter voltage V
E, set this temperature upper limit T
OffExpression.
How to utilize switching tube m below in conjunction with this embodiment of theoretical analysis
0Gating to second reference current produces retarding window.
The collector current of known bipolar transistor can be used formula (2) expression:
I
C＝I
Sexp(V
be/V
T) (2)
Wherein, V
TBe equivalent thermal voltage, and V
T=kT/q, k are Boltzmann constant, and q is an electron charge.I
sBe saturation current.
The base-emitter voltage that can be obtained bipolar transistor by formula (1) is shown in the formula (3):
V
be＝V
T?In(I
C/I
S) (3)
Because V
BeBe negative temperature coefficient voltage, then as shown in Figure 2 in this embodiment circuit the negative input end voltage of general comparator comp be bipolar PNP pipe Q
0Emitter voltage V
EBe negative temperature coefficient voltage.
And in normal range of operation, because the second reference current source I
Ref2In the access circuit, this moment, bipolar PNP managed Q
0Emitter voltage obtain by expression formula shown in the formula (4).
Below as the second reference current source I
Ref2During access circuit, bipolar PNP pipe Q
0Emitter voltage all use V
E1Expression; As the second reference current source I
Ref2Not during place in circuit, bipolar PNP pipe Q
0Emitter voltage all use V
E2Expression.
V
E1＝V
Tln[(I
ref1+I
ref2)/I
S] (4)
Along with temperature rises, bipolar PNP pipe Q
0Emitter voltage V
E1Begin to descend, make voltage V when temperature rises to
E1Positive input terminal reference voltage V less than general comparator comp
RefThe time, the output V of general comparator comp then
OutBe noble potential, switching tube m
0End the second reference current source I
Ref2Be turned off, this moment, bipolar PNP managed Q
0Emitter voltage obtain by expression formula shown in the formula (5).
V
E2＝V
Tln[I
ref1/I
S] (5)
The output V of general comparator comp
OutBe control signal, the exportable shutoff that is used for control system.When temperature reaches ceiling temperature T
OffThe time, system closing makes the temperature of entire chip begin to descend, and bipolar PNP pipe Q
0Base-emitter voltage V
E2Rise, when rising to again greater than reference voltage V
RefThe time, general comparator comp upset, output V
OutBe low level, illustrative system returns to the temperature of a safety, can restarting systems, set the temperature T of this moment
OnExpression.And this moment switching tube m
0Conducting, bipolar PNP pipe Q
0Emitter voltage return to the V shown in the formula (4) again
E1Concrete voltage temperature change curve as shown in Figure 3.
Therefore, described reference voltage V
RefValue for when temperature be T
OffThe time emitter voltage V
E1, V then
RefAvailable formula (6) expression:
V
ref＝V
E1＝kT
off/qln[(I
ref1+I
ref2)/I
S] (6)
Therefore, when having set temperature upper limit T
OffAfter, and determine reference voltage V according to formula (6)
RefAfter, the described temperature sensing circuit of this embodiment can be applicable to high temperature and detects.
The big I of retarding window as shown in Figure 3 is by regulating reference current source I
Ref2Size regulate and the temperature T of general comparator comp when overturning again
OnAlso can be by reference voltage V
RefAnd T
OffDetermine, promptly as reference current source I
Ref2Place in circuit and temperature are not T
OnThe time bipolar PNP pipe Q
0Emitter voltage also equal reference voltage V
Ref
It should be noted that the described temperature sensing circuit of present embodiment and detect, also can be applicable to low temperature and detect, when being applied to the low temperature detection, lowest temperature value T can be set arbitrarily except being applied to high temperature
Off', by this lowest temperature value T
Off' determine reference voltage V
Ref', satisfy original state and drop to lower limit T gradually when temperature
Off' time, promptly bipolar PNP pipe Q
0Emitter voltage V
E2Rise to reference voltage V
RefIn ' time, general comparator comp overturns, therefore, and reference voltage V when low temperature detects
Ref' definite method be formula (7):
V′
ref＝V
E2＝kT
off/qln[I
ref1/I
S] (7)
And when low temperature detects, be that temperature drops to lowest temperature value T under the normal operating conditions
Off' time, bipolar PNP pipe Q
0Emitter voltage V
E2Less than this reference voltage V
Ref', as shown in Figure 4, switching tube m under the normal operating conditions then
0End reference current source I
Ref2In the place in circuit, bipolar PNP does not manage Q
0Emitter voltage V
E2As the formula (5); Along with decrease of temperature, this emitter voltage V
E2Rise, make bipolar PNP pipe Q when temperature drops to
0Emitter voltage V
E2Greater than reference voltage V
Ref' time, then switching tube m
0Conducting, bipolar PNP pipe Q
0Emitter voltage become by the V shown in the formula (4)
E1, this moment, then bipolar PNP managed Q if temperature continues to descend
0Emitter voltage continue to rise; But this moment, when chip temperature began to rise, bipolar PNP managed Q along with the increase of voltage and current
0Emitter voltage begin to descend, roll back reference voltage V instantly
RefIn ' time, then general comparator comp overturns, reference current source I
Ref2Open from circuit interruption.
The big I of retarding window equally, as shown in Figure 4 is by regulating reference current source I
Ref2Size regulate and the temperature T of general comparator comp when overturning again
On' also can be by reference voltage V
Ref' and T
Off' determine, promptly as reference current source I
Ref2Place in circuit and temperature are T
OnIn ' time,, bipolar PNP managed Q
0Emitter voltage also equal reference voltage V
Ref'.
In addition, temperature sensing circuit shown in this embodiment detects or the low temperature detection except being applied to high temperature separately, application also capable of being combined makes temperature be positioned at a certain zone, only needs two output control signals with high temperature testing circuit and low temperature testing circuit through one or export as control signal more behind the door.Wherein the parameter of high temperature testing circuit and low temperature testing circuit can be inequality, the big I of retarding window that is the retarding window at upper temperature limit place and lowest temperature place is inequality, and high temperature testing circuit and low temperature testing circuit are regulated the size of second reference current source separately respectively to regulate retarding window size separately.
Above content be in conjunction with concrete preferred implementation to further describing that the present invention did, can not assert that concrete enforcement of the present invention is confined to these explanations.For the general technical staff of the technical field of the invention, without departing from the inventive concept of the premise, can also make some simple deduction or replace, all should be considered as belonging to protection scope of the present invention.
Claims (9)
1. a temperature sensing circuit is characterized in that, this circuit is used for high temperature and detects, and comprises a general comparator comp, a switching tube m
0, two reference current source I
Ref1And I
Ref2, bipolar PNP pipe Q
0, a reference voltage V
RefWith a power supply V
DDAnd earth terminal; Wherein, switching tube m
0With reference current source I
Ref2After the series connection again with reference current source I
Ref1Be parallel to power supply V
DDWith bipolar PNP pipe Q
0Emitter between; This bipolar PNP pipe Q
0Base stage and collector hold with being connected to, its emitter also links to each other with the negative input end of general comparator comp, the positive termination reference voltage V of this general comparator comp
Ref, and output V
OutBe control signal, and this control signal also connects switching tube m
0Grid, reference voltage V
RefValue determine by the temperature upper limit that is provided with.
2. temperature sensing circuit according to claim 1 is characterized in that, described reference voltage V
RefDefinite method for as reference current source I
Ref2Place in circuit, and temperature bipolar PNP pipe Q during for the temperature upper limit that is provided with
0Emitter voltage equal reference voltage V
Ref
3. temperature sensing circuit according to claim 2 is characterized in that, described temperature sensing circuit is by regulating reference current source I
Ref2Size adjustment output V
OutThe size of retarding window in the curve of output.
4. temperature sensing circuit according to claim 1 is characterized in that, this circuit is used for low temperature and detects, and reference voltage V
Ref' replacement reference voltage V
Ref, reference voltage V wherein
Ref' value determine by the lowest temperature value that is provided with.
5. temperature sensing circuit according to claim 4 is characterized in that, described reference voltage V
Ref' definite method for as reference current source I
Ref2Bipolar PNP pipe Q when not place in circuit, and temperature is the lowest temperature value that is provided with
0Emitter voltage.
6. temperature sensing circuit according to claim 5 is characterized in that, described temperature sensing circuit is by regulating reference current source I
Ref2Size adjustment output V
OutThe size of retarding window in the curve.
7. temperature sensing circuit, it is characterized in that, this circuit comprises a high temperature testing circuit and a low temperature testing circuit, and one or the door, the input of the output control signal of described high temperature testing circuit and conduct of the output control signal of low temperature testing circuit or door, or the output of door is as the output control signal of this temperature sensing circuit;
This high temperature testing circuit is a circuit shown in the claim 1;
This low temperature testing circuit is a circuit shown in the claim 4.
8. temperature sensing circuit according to claim 7 is characterized in that, the big I of retarding window in the output control signal curve of described high temperature testing circuit is regulated by the size of regulating second reference current source in the described high temperature testing circuit.
9. temperature sensing circuit according to claim 7 is characterized in that, the big I of retarding window in the output control signal curve of described low temperature testing circuit is regulated by the size of regulating second reference current source in the described low temperature testing circuit.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010138971.4A CN102207409B (en) | 2010-03-30 | 2010-03-30 | A kind of temperature sensing circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010138971.4A CN102207409B (en) | 2010-03-30 | 2010-03-30 | A kind of temperature sensing circuit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102207409A true CN102207409A (en) | 2011-10-05 |
| CN102207409B CN102207409B (en) | 2016-01-06 |
Family
ID=44696352
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201010138971.4A Expired - Fee Related CN102207409B (en) | 2010-03-30 | 2010-03-30 | A kind of temperature sensing circuit |
Country Status (1)
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102620843A (en) * | 2012-04-18 | 2012-08-01 | 上海中科高等研究院 | Chip over-temperature monitor |
| CN103208736A (en) * | 2013-03-18 | 2013-07-17 | 青岛海信宽带多媒体技术有限公司 | Method and device for controlling temperature based on thermoelectric refrigerating unit |
| CN103837252A (en) * | 2012-11-23 | 2014-06-04 | 爱思开海力士有限公司 | Semiconductor device |
| CN104660901A (en) * | 2015-02-05 | 2015-05-27 | 惠州Tcl移动通信有限公司 | Temperature-based camera configuring method and system and as well as mobile terminal |
| CN104833439A (en) * | 2015-04-07 | 2015-08-12 | 青岛歌尔声学科技有限公司 | Temperature detection circuit and electronic device with same |
| CN108649934A (en) * | 2018-05-31 | 2018-10-12 | 成都锐成芯微科技股份有限公司 | A kind of hysteresis comparator circuit |
| CN112803363A (en) * | 2020-12-29 | 2021-05-14 | 中国科学院微电子研究所 | Over-temperature protection circuit |
| CN113063514A (en) * | 2021-02-22 | 2021-07-02 | 深圳阜时科技有限公司 | Temperature detection circuit, fingerprint chip module and electronic equipment |
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Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102620843B (en) * | 2012-04-18 | 2013-09-11 | 上海中科高等研究院 | Chip over-temperature monitor |
| CN102620843A (en) * | 2012-04-18 | 2012-08-01 | 上海中科高等研究院 | Chip over-temperature monitor |
| US10197453B2 (en) | 2012-11-23 | 2019-02-05 | SK Hynix Inc. | Semiconductor device |
| CN103837252A (en) * | 2012-11-23 | 2014-06-04 | 爱思开海力士有限公司 | Semiconductor device |
| TWI630619B (en) * | 2012-11-23 | 2018-07-21 | 愛思開海力士有限公司 | Semiconductor device |
| CN103837252B (en) * | 2012-11-23 | 2019-05-07 | 爱思开海力士有限公司 | Semiconductor device |
| US10612981B2 (en) | 2012-11-23 | 2020-04-07 | SK Hynix Inc. | Semiconductor device |
| CN103208736B (en) * | 2013-03-18 | 2015-10-21 | 青岛海信宽带多媒体技术有限公司 | Based on temperature-controlled process and the device of thermoelectric refrigerating unit |
| CN103208736A (en) * | 2013-03-18 | 2013-07-17 | 青岛海信宽带多媒体技术有限公司 | Method and device for controlling temperature based on thermoelectric refrigerating unit |
| CN104660901A (en) * | 2015-02-05 | 2015-05-27 | 惠州Tcl移动通信有限公司 | Temperature-based camera configuring method and system and as well as mobile terminal |
| CN104833439A (en) * | 2015-04-07 | 2015-08-12 | 青岛歌尔声学科技有限公司 | Temperature detection circuit and electronic device with same |
| CN108649934A (en) * | 2018-05-31 | 2018-10-12 | 成都锐成芯微科技股份有限公司 | A kind of hysteresis comparator circuit |
| CN112803363A (en) * | 2020-12-29 | 2021-05-14 | 中国科学院微电子研究所 | Over-temperature protection circuit |
| CN112803363B (en) * | 2020-12-29 | 2024-02-23 | 中国科学院微电子研究所 | Over-temperature protection circuit |
| CN113063514A (en) * | 2021-02-22 | 2021-07-02 | 深圳阜时科技有限公司 | Temperature detection circuit, fingerprint chip module and electronic equipment |
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| Publication number | Publication date |
|---|---|
| CN102207409B (en) | 2016-01-06 |
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