CN102203933B - Use orientation to peel off and form method for semiconductor and device on insulator structure - Google Patents

Use orientation to peel off and form method for semiconductor and device on insulator structure Download PDF

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Publication number
CN102203933B
CN102203933B CN200980143709.4A CN200980143709A CN102203933B CN 102203933 B CN102203933 B CN 102203933B CN 200980143709 A CN200980143709 A CN 200980143709A CN 102203933 B CN102203933 B CN 102203933B
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thin layer
ion
semiconductor wafer
weakening
donor semiconductor
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CN200980143709.4A
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CN102203933A (en
Inventor
S·切瑞克德简
J·S·希特斯
J·G·库亚德
R·O·马斯克梅耶
M·J·莫尔
A·尤森科
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Corning Inc
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Corning Inc
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Priority claimed from US12/290,362 external-priority patent/US7816225B2/en
Priority claimed from US12/290,384 external-priority patent/US8003491B2/en
Application filed by Corning Inc filed Critical Corning Inc
Publication of CN102203933A publication Critical patent/CN102203933A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/782—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, each consisting of a single circuit element
    • H01L21/786—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, each consisting of a single circuit element the substrate being other than a semiconductor body, e.g. insulating body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body

Abstract

Method and apparatus provides and forms semiconductor-on-insulator (SOI) structure, comprise: make the injection of donor semiconductor wafer surface experience ion implantation step weaken thin layer to be formed in the cross section of exfoliation layer defining donor semiconductor wafer, and make donor semiconductor wafer before implantation step, among or experience spatial variations step afterwards and change across weakening lamella space along at least one direction in X-axis and Y direction to make at least one parameter of weakening thin layer.

Description

Use orientation to peel off and form method for semiconductor and device on insulator structure
the cross reference of related application
This application claims the U. S. application No.12/290 submitted on October 30th, 2008, the U. S. application No.12/290 that on October 30th, 362 and 2008 submits to, the priority of 384, the content of these two sections of documents is incorporated herein by reference.
Technical field
The present invention relates to the manufacture of semiconductor-on-insulator (SOI) structure, such as, there are those structures of non-circular cross sections and/or there are those structures of relatively large cross-sectional area.
Background technology
Along with the sustainable growth of the market demand, semiconductor on insulator device is just becoming more and more desirable.SOI technology is just becoming more and more important for the display, integrated circuit, photoelectric device etc. of high performance thin film transistor (TFT), solar cell and such as Active Matrix Display, Organic Light Emitting Diode (OLED) display, liquid crystal display (LCD).Soi structure can comprise thin layers of semiconductor material, such as silicon on the insulating material.
The method of multiple acquisition soi structure is included in silicon (Si) epitaxial growth in lattice matched substrates and silicon single crystal wafer is attached to another silicon wafer.Other method comprises ion implantation technique, wherein by hydrogen ion or O +ion implanted, to form the oxide skin(coating) imbedded when O +ion implanted in the silicon wafer taking silicon as top, or be separated (peeling off) thin silicone layer when Hydrogen implantation to be incorporated into another silicon wafer with oxide skin(coating).
U.S. Patent No. 7,176,528 disclose a kind of technology process using spallation techniques to form SOG (Semiconductor-on-glass) structure.These steps comprise: silicon wafer surface is exposed to Hydrogen implantation to form mating surface by (i); (ii) mating surface of wafer is made to contact with glass substrate; (iii) combination between them is beneficial to wafer and glass substrate applying pressure, temperature and voltage; And (iv) makes glass substrate be separated from silicon wafer with silicon thin layer.
Preceding method in some cases and/or be easily subject to when using under certain applications not conforming to the impact needing effect.See Figure 1A-1D, ion, such as hydrogen ion, 21 be injected into semiconductor wafer 20 by surface, is just homogeneous with regard to the density of leap semiconductor wafer 20 and the degree of depth to make implantation dosage.
See Figure 1A, when the semi-conducting material of such as silicon is injected into such as hydrionic ion, is formed and damage site.The stratum boundary damaging site determines exfoliation layer 22.These some nucleation damaging in site are the platelet (platelet) (they have very large effective diameter and almost do not have height) with very high aspect ratio.Come from the gas injecting ion, such as H 2, diffuse into platelet to form multiple bubbles with analogous high aspect ratio.Air pressure in these bubbles can very high and estimate can up to about 10 kilobars.
As shown in four-headed arrow in Figure 1B, platelet or bubble grow in effective diameter until they are enough close each other, and remaining silicon is too fragile and cannot bear the high pressure of gas.Start to there is not preferential point owing to being separated front end, therefore can form multiple separation front end randomly and multiple crackle is propagated by semiconductor wafer 20.
At the adjacent edges of semiconductor wafer 20, plane effusion may be rich in from hydrogen compared with the hydrogen injecting of great share.This is because the vicinity of sedimentation (i.e. the sidewall of wafer 20).More specifically, in injection process, ion (such as Hydrogen Proton) slows down by the lattice structure of semiconductor wafer (such as silicon) 20 and some silicon atoms is subjected to displacement from its lattice sites, forms defect plane.Along with hydrogen ion loses its kinetic energy, they become atomic hydrogen and define atomic hydrogen plane further.Defect plane and atomic hydrogen plane are all at room temperature unstable in silicon crystal lattice.Therefore, defect (hole) and atomic hydrogen move towards each other and form heat-staple hole-proton element.Multiple nucleic forms hydrogen together and is rich in plane.(once heating, silicon crystal lattice generally can be rich in plane along hydrogen and split.)
Not every hole and hydrogen all can stand break and become hydrogen-hole nucleic.Some atomic hydrogen nucleic are also final from hole plane to outdiffusion departs from silicon wafer 20.Therefore, some atomic hydrogens do not cause splitting of exfoliation layer 22.At the adjacent edges of silicon wafer 20, hydrogen atom has the extra path departing from lattice.Therefore, the hydrogen concentration of the fringe region of silicon wafer 20 may be lower.Lower hydrogen concentration causes needing higher temperature or longer time to form enough power to support to be separated.
Therefore, in separating technology, form the not separated tent like structure in edge 24.Under critical pressure, the fracture of residue semi-conducting material occurs along relatively fragile plane, such as 111} plane (Fig. 1 C), and exfoliation layer 22 completes (Fig. 1 D) from the separation of semiconductor wafer 20.But edge 22A, 22B are outside the main cleaved plane defined by damage site.It is undesirable that this on-plane surface splits.The further feature be separated comprises exfoliation layer 22 to be depicted as and has " tableland " (wherein there is platelet or bubble), surrounded by " valley " (wherein rupturing).It should be noted that these tablelands and valley are not accurately illustrated in Fig. 1 D, because these details are beyond the ability reproduced with diagram ratio.
Be not limit the invention to any theory of operation, present inventor believes that use aforementioned techniques is the order of magnitude of 10 microseconds to the time completing separation from being separated.In other words, separation random start and to propagate be the order of magnitude of about 3000 meter per seconds.Equally, be not limit the invention to any theory of operation, the applicant of the application believes that this rate of departure facilitates undesirable feature of the cleaved surface of aforementioned exfoliation layer 22 (Fig. 1 D).
U.S.6,010,579 record a kind of technology homogeneous ion-implanted semiconductor substrate 10 being reached homogeneous degree of depth Z0, wafer is in lower than causing the temperature being separated and starting, and the edge subsequently multiple energy pulse being incorporated into the substrate 10 injected near degree of depth Z0 is to obtain " front end of splitting be controlled ".U.S.6,010,579 claim that preceding method is better than the improvement that what is called " at random " splits, at least with regard to surface roughness.The present invention adopts directional separation method, and the method is obviously different from U.S.6, " in check front end of the splitting " method of 010,579 and be different from " at random " cracking method.
Aforesaidly be separated from semiconductor wafer 20 difficult problem be associated with exfoliation layer 22 and increase along with soi structure size and aggravate, especially when the shape of semiconductor wafer is rectangle.This rectangular semiconductor can use under polylith semiconductor chip plate is coupled in the occasion of insulator substrates.About the more details of the manufacture of sheet template soi structure can find in U.S. Application Publication No.2007/0117354, its whole published content combines therewith by reference.
Summary of the invention
For the convenience represented, below discuss and will carry out with reference to soi structure every now and then.Soi structure with reference to this particular type is anything but in order to also not be construed as limiting the scope of the invention in order to help to explain the present invention.The general abbreviation SOI that uses indicates semiconductor-on-insulator structure herein, includes but not limited to silicon on insulated substrate.Equally, use abbreviation SOG to make a general reference semiconductor on glass structure, include but not limited to silicon-on-glass structure.Abbreviation SOI contains SOG structure.
According to one or more embodiment of the present invention, method and apparatus for the formation of semiconductor-on-insulator (SOI) structure comprises: make the injection surface experience ion implantation step of donor semiconductor wafer weaken thin layer to be formed in the cross section of the exfoliation layer of definition donor semiconductor wafer, and make donor semiconductor wafer before implantation step, among or experience spatial variations step afterwards and change along at least one director space in X-axis and Y direction across wafer to make one or more parameters of weakening thin layer.
The feature that spatial variations step impels exfoliation layer to be separated from donor semiconductor wafer, is in direction to make these separation and/or the time is controllable.
These parameters can comprise one or more alone or in combination below: (i) comes from the density in the nucleation site of ion implantation step; (ii) degree of depth that thin layer distance injects surface (or datum plane) is weakened; (iii) by injecting surface at least to the damage position (such as blind hole) of the artificial generation of weakening thin layer; And (iv) serviceability temperature gradient increases throughout the defect sites nucleation and/or pressure weakening thin layer.
The method and device are also used for donor semiconductor wafer to rise to the temperature being enough to cause to be separated from point, edge and/or a region weakening thin layer at weakening thin layer place.Donor semiconductor wafer can stand to be enough to the basic higher temperature directionally continuing to be separated along weakening thin layer because of the parameter become in change.
When present invention is described by reference to the accompanying drawings, other side, feature, advantage etc. will become apparent to one of ordinary skill in the art.
accompanying drawing is sketched
In order to explain orally each aspect of the present invention, at present preferred form shown in the drawings, but should be appreciated that and the invention is not restricted to shown accurate configuration and means.
Figure 1A, 1B, 1C and 1D are the block diagrams of the exfoliation process illustrated according to prior art;
Fig. 2 A-2B is the block diagram of the exfoliation process illustrated according to the one or more aspect of the present invention;
Fig. 3 A is the vertical view with the donor semiconductor wafer of the spatial variations parameter be associated with weakening layer or thin layer wherein according to one or more aspect of the present invention;
Fig. 3 B is the curve chart of the spatial variations parameter that Fig. 3 A is diagrammatically shown;
Fig. 3 C diagrammatically illustrates that the spatial variations parameter of Fig. 3 A is the curve chart weakening the thin layer degree of depth;
Fig. 4 A, 4B and 4C are the vertical views with the corresponding donor semiconductor wafer of further spatial variations parameter according to one or more further aspect of the present invention;
Fig. 5 A, 5B and 5C are the reduced graphs of some ion implantation apparatuses being suitable for the spatial variations parameter obtaining donor semiconductor wafer;
Fig. 6 A-6B illustrates the ion implantation technique of the spatial variations density being suitable for a certain nucleation site obtained in donor semiconductor wafer;
Fig. 7 A-7B illustrates and is suitable for the ion implantation technique that a certain spatial variations obtained in donor semiconductor wafer injects the degree of depth;
Fig. 7 C-7D is curve chart tilted ion implantation angle being shown and injecting the relation between the degree of depth;
Fig. 8 A-8B illustrates and is suitable for the ion implantation technique that a certain spatial variations obtained in donor semiconductor wafer injects the dispersion of distribution;
Fig. 8 C illustrates tilted ion implantation angle and the curve chart of relation between spreading;
Fig. 9 A-9D illustrates and is suitable for the another ion implantation technique that a certain spatial variations obtained in donor semiconductor wafer injects the degree of depth;
Figure 10 A-10D and Figure 11 illustrates the another ion implantation technique of a certain spatial variations distribution being suitable for obtaining defect sites in donor semiconductor wafer; And
Figure 12 A-12B illustrates the time-Wen Curve Technique being suitable for obtaining the spatial variations parameter curve in donor semiconductor wafer.
Embodiment
With reference to accompanying drawing, wherein same tag represents identical key element, according to the middle soi structure (especially SOG structure) of the one or more embodiment of the present invention shown in Fig. 2 A-2B.Middle SOG structure comprises insulator substrates and the donor semiconductor wafer 120 of such as glass or glass ceramic substrate 102.Glass or glass ceramic substrate 102 and donor semiconductor wafer 120 used such as combine, fuse, any already known processes in the industry such as bonding is coupled.
Before glass or glass ceramic substrate 102 and donor semiconductor wafer 102 being coupled, donor semiconductor wafer 120 comprises the injection surface 121 of exposure.The injection surface 121 of donor semiconductor wafer 120 is stood ion implantation step and is weakened thin layer 125 to be formed in the cross section defining exfoliation layer 122.Weaken thin layer 125 and be basically parallel to the datum plane (therefore this datum plane can not illustrated in any position) defined by X-Y normal axis direction.X-direction is shown in fig. 2, and Y direction (not therefore to be illustrated) towards in paper perpendicular to X-direction from left to right.
Donor semiconductor wafer 120 before ion implantation step, among or experience spatial variations step afterwards, be that direction and/or time are controllable to make exfoliation layer 122 with the separation characteristic of donor semiconductor wafer 120.Although be not intended to limit the present invention to any theory of operation, but believe that such direction and/or time controllability can cause the separation characteristic improved, the exposed surface that such as, in exfoliation layer 122 and donor semiconductor wafer 120 (after isolation) is more smooth.Also believe that such direction and/or temperature control can cause the edge feature improved, such as improve the generation (yield) at the edge of the exposed surface in exfoliation layer 122 and donor semiconductor wafer 120, these exposed surfaces are positioned at by weakening among main cleaved plane that thin layer 125 defines.
Exfoliation layer 122 can several means realize by controlling feature from the direction that donor semiconductor wafer 120 is separated and/or time, such as, change one or more parameter along at least one direction in X-axis and Y direction spatially across weakening thin layer 125.These parameters can comprise one or more alone or in combination below: (i) comes from the density in the nucleation site of ion implantation step; (ii) thin layer 125 is weakened apart from the degree of depth injecting surface 121 (or datum planes); (iii) by injecting surface 121 at least to the damage position (such as blind hole) of the artificial generation of weakening thin layer 125; And (iv) serviceability temperature gradient increases throughout the defect sites nucleation and/or pressure weakening thin layer 125.
As shown in arrow A in Fig. 2 A-2B, exfoliation layer 122 cause from the direction that donor semiconductor wafer 120 is separated and/or time controllable feature because of become to be separated in the time from point, edge and/or a regional spread weaken thin layer 125 other point, edge and/or region.This whole realization is as follows: first, changes one or more parameter spatially as previously mentioned, secondly, donor semiconductor wafer 120 is warming up to the temperature being enough to weakening thin layer 125 is separated from this point, edge and/or region across weakening thin layer 125.After this, donor semiconductor wafer 120 is warming up to the higher temperature be enough to because becoming in directionally continuing along weakening thin layer 125 to be separated across the parameter space weakening thin layer 125 changes.Preferably set up running parameter with make intensification time-Wen curve with several seconds for magnitude, and make to propagate along the separation weakening thin layer 125 to occur between at least one second.
Referring now to Fig. 3 A-3C, Fig. 3 A-3C illustrate with spatially across the further details weakening thin layer 125 and change one or more parameter association.Fig. 3 A is the vertical view by injecting the donor semiconductor wafer 120 that surface 121 is observed.Along the spatial variations (distribution, the injection degree of depth etc. in the pressure in the density in such as nucleation site, site, nucleation degree, the artificial damage site (cavity) formed) of the change representation parameter of X-direction shade.In the example shown, one or more parameter is along X-direction from an edge 130A to the opposite edges 130B change of donor semiconductor wafer 120 (and therefore it weakens thin layer 125), and vice versa.
See Fig. 3 B, the curve chart of separation parameter illustrates that the density such as weakening the nucleation site in thin layer 125 is because becoming the cross-section curve in X-direction.As an alternative or additional, separation parameter can represent the distribution of one or more pressure, nucleation degree, the artificial damage site (cavity) formed etc. in nucleation site, and these parameters are all because becoming in X-axis spatial measure.See Fig. 3 C, the curve chart of separation parameter illustrates that the degree of depth (corresponding to the ion implantation degree of depth) such as weakening thin layer 125 is because becoming the cross-section curve in X-direction.
Although be not intended to limit the present invention to any one or more theory of operation, but phase believer in a certain religion edge 130A density from nucleation site to the propagation (as the dotted line arrows) of the separation of edge 130B that occur in is relatively high and when being decreased to lower nucleation site density towards the locus of edge 130B at edge 130A.It is also like this that this theory is believed other parameter, merges the degree in nucleation site and the distribution in the artificial damage site (cavity) produced before such as, air pressure in nucleation site, separation.But, for with the parameter weakening the degree of depth of thin layer 125 and associate, phase believer in a certain religion edge 130B towards the propagation (being represented by filled arrows) of the separation of edge 130A occur in along weaken thin layer 125 the initial edge 130B fully low degree of depth of existence and when there is the relatively high degree of depth in the follow-up larger distance of edge 130A.
Referring now to Fig. 4 A-4C, Fig. 4 A-4C illustrate with spatially across the further details weakening thin layer 125 and change one or more parameter association.Fig. 4 A-4C illustrates the vertical view by injecting the donor semiconductor wafer 120 that surface 121 is observed.Along the spatial variations of the shade change representation parameter of X-axis and Y direction, be the distribution, the injection degree of depth etc. in the pressure in the density in nucleation site, site, nucleation degree, the artificial damage site (cavity) formed equally.Under the often kind of situation illustrated, parameter changes all spatially along X-direction and Y direction.
Specifically see Fig. 4 A, shade can change spatially towards two other edge 130B, 130C and all changes in follow-up larger distance along X and Y direction by representation parameter from two edges 130A, 130D.Consistent with aforementioned discussion, when considering the parameter of density in nucleation site, if higher density starts at edge 130A, 130D, then believe that the propagation (being represented by dotted arrow) of separation gives off the corner from edge 130A, 130D towards other edges 130B, 130C towards the center of wafer 120.It is also like this that this theory is believed other parameter, merges the degree in nucleation site and the distribution in the artificial damage site (cavity) produced before such as, air pressure in nucleation site, separation.But, for the parameter associated with the degree of depth weakening thin layer 125, believe when start along edge 130B, 130C be comparatively low depth and low depth time, the propagation (being represented by filled arrows) of separation will give off towards other edges 130A, 130D from the corner of edge 130B, 130C towards the center of wafer 120.
Specifically see Fig. 4 B and 4C, shade can to change spatially and center towards donor semiconductor wafer 120 changes by representation parameter from whole edge 130, or vice versa.
The special parameter of nucleation site densities is changed to provide further details along one or two direction in X-axis and Y direction across the space of the ion implantation weakening thin layer 125 referring now to coming from.No matter adopt any technology to realize this spatial variations, preferably at about 5x10 5site/cm 2one or more edges of weakening thin layer 125, point or region there is maximum nucleation site density, and at about 5x10 4site/cm 2weakening thin layer 125 in position spaced apart with it there is minimum nucleation site density.Examine this change in another way closely, the difference between maximum nucleation site density and minimum nucleation site density can between about 10 times.
According to one or more aspect of the present invention, the dosage by changing ion implantation step changes the nucleation site density weakened in thin layer 125 spatially.Via the method for background technology, weaken thin layer 125 (and therefore producing exfoliation layer 122) by making experience one or more ion implantation step in injection surface 121 produce.Although there are the numerous ion implantation techniques, apparatus etc. that can be used for this point, but a kind of proper method specifies that the injection surface 121 of donor semiconductor wafer 120 can experience Hydrogen implantation step at least to start the formation of exfoliation layer 122 in donor semiconductor wafer 120.
Show the rough schematic view of AxcelisNV-10 type Batch implanters see Fig. 5 A, Fig. 5 A, this injector can be retrofited and be changed the density in the nucleation site weakening thin layer 125 with the dosage by changing injection ion spatially.
Polylith donor semiconductor wafer 120---be rectangular sheet plate in this case---can relative to incident ion bundle 202 (pointing in paper) along azimuth be distributed on cylinder 200 radii fixus on.The rotation of cylinder 200 provides pseudo-X scanning (dX/dt) and the mechanical translation of whole cylinder 200 provides Y to scan (dY/dt).Use term " pseudo-X scanning " be because for the cylinder 200 of minor radius X scanning to compare relatively large radius cylinder 200 more bending in a way, and therefore perfectly linear scanning cannot obtain on this swing roller 200.X sweep speed and/or Y sweep speed is regulated to cause the spatial variations of dosage.To adopt in the past along with ion beam 202 radially towards the central row of cylinder 200 and then increase Y sweep speed to guarantee homogeneous dosage.In fact, due to traditional idea be in the industry obtain the homogeneous dosage in space and when relative donor semiconductor wafer 120 angular speed the closer to cylinder 200 center and reduce time Y sweep speed must correspondingly increase.But according to the present invention, can not obtain the dosage of spatial variations in accordance with traditional scanning rule, this causes the pattern of such as Fig. 3 A and 4A.Such as, along with ion beam 202 radially towards the central row of cylinder 200 and then keep Y sweep speed homogeneous.Alternatively, radially Y sweep speed can be reduced towards the center of cylinder 200 along with ion beam 202.Those skilled in that art can know other feasible program by inference from this paper disclosure.A kind of alternative method changes beam energy because becoming in sweep speed and position.Correction or other machinery remodeling of the electrical interface between these changes drive by the correction to the injector control algolithm in software, to control software design and terminal station realize.
Show the rough schematic view of single substrate X-Y injector see Fig. 5 B, Fig. 5 B, this injector can be retrofited and be changed the density in the nucleation site weakening thin layer 125 with the dosage by changing injection ion spatially.In this case, electron beam 202 scans and far scans faster than (Fig. 5 A's) mechanical substrate.Equally, traditional idea in the industry obtains the homogeneous dosage in space, and therefore set X and Y sweep speed and beam energy to obtain homogeneous dosage.Equally, the dosage that traditional scanning rule obtains spatial variations can not be observed.A large amount of spatial variations of implantation dosage are realized by X, Y sweep speed of change and/or the multiple combination of beam energy.Form one dimension or two-dimensional gradient by this change, vertical or level, this causes the pattern of such as Fig. 3 A, 4A, 4B and 4C.
The rough schematic view of the injector according to ion bath technology is shown see Fig. 5 C, Fig. 5 C.Ribbon-shaped beam 204 produces the ion source from extending.According to conventional art, single homogeneous velocity scanning (being proportional to the homogeneous beam energy on orthogonal direction) can obtain traditional perfect condition, the dosage that namely space is homogeneous.But according to various aspects of the present invention, the mechanical scanning rate variation by donor semiconductor wafer 120 produces one dimension gradient (such as by after Fig. 3 A half-twist) by ribbon-shaped beam 204.Change in conjunction with mechanical scanning speed makes donor semiconductor wafer 120 reverse relative to ribbon-shaped beam 204 spatial variations that mode that certain angle can be similar to Fig. 4 A forms dosage.As an alternative or additional, the beam energy along beam source spatial variations provides the gradient orthogonal with scanning direction, provides the extra degree of freedom to produce the spatial variations dosage of subordinate.
What the specific injection technique no matter adopted for obtaining doses change is, and regardless of maximum dose level position wherein (such as along one or more start edge, starting point or initiation region), maximum dose level drops on atom/cm substantially 2for in a certain claimed range of unit, and along at least one direction in X-axis and Y direction from then on further lowest dose level forward drop on atom/cm 2for in other claimed range a certain of unit.Difference between maximum dose and minimum dose between about 10-30%, can have maximum being changed to approximately to 1/3rd.In some applications, found that the difference of at least about 20% is important.
According to one or more other side of the present invention, by the ion of the first nucleic to be injected the nucleation site density changing and weaken thin layer 125 in substantially homogeneous mode, thus set up the weakening thin layer 125 with substantially homogeneous distribution.After this, donor semiconductor wafer 120 can heterogeneity mode be injected with the ion of the second nucleic substantially.Set up heterogeneity and inject to make the ion of the second nucleic cause atomic migration to weakening thin layer 125, this causes nucleation site across the density weakening the change of thin layer 125 space.
Exemplarily, the ion of the first nucleic can be hydrogen ion and the ion of the second nucleic can be helium ion.
Describe before can using in this specification, describe afterwards or inject to realize heterogeneity from other technology carrying out Feed Discovery.Such as, the dosage of the second radionuclide ion can change spatially.Second radionuclide ion after causing is gone to the heterogeneity migration of the position of the first radionuclide ion by the doses change of the second radionuclide ion (such as He ion), sets up the heterogeneity density in nucleation site thus.This change also may change the pressure in cylinder, and this is also useful.
Alternatively, the heterogeneity of the second radionuclide ion injects the degree of depth that can comprise and to be injected into by the second radionuclide ion across donor semiconductor wafer 120 spatial variations.Those skilled in that art can revise according to religious doctrine herein ion is inputed to the homogeneous degree of depth any known technology to obtain heterogeneity depth curve.By the description of background technology, the comparable hydrogen ion of known helium ion deeper injects, and such as twice deeply or darker.Along with chip temperature rises, many helium ions will migrate to the site of more shallow Hydrogen implantation and be provided for the air pressure of later stage separation.According to current aspect of the present invention, by more buried enter the damage that causes of helium be positioned at the degree of depth of donor semiconductor wafer 120 away from more shallow Hydrogen implantation, and in these helium ions, a very little part can get there within preset time.For more shallow injection helium ion vice versa, cause nucleation site across the density weakening thin layer 125 spatial variations thus.
Although the nucleation site density of spatial variations can be ignored the order (such as first injection helium or first hydrogen injecting) of the first and second radionuclide ion and obtain in theory, but the order of polyion implantation step also can have an impact to the result required.In fact, injection order---depending on ion species---has impact on the whole, when namely convenient density also changes spatially to density.Although concerning those skilled in that art be run counter to intuition with thrilling, but found that first hydrogen injecting produces more nucleation site.Those skilled in that art find, for given dose, helium produces and decuples hydrionic infringement.But it should be noted that the infringement (hole and crack semiconductor atom, or Frankel to) that produces of helium ion is even if itself at room temperature also promptly anneal.Therefore, the many but helium of not all infringement is repaired.On the other hand, hydrogen ion is combined with the semiconductor atom of such as silicon atom (forming Si-H key), and produced injury is stablized.If hydrogen exists before helium injects, then can produce more nucleation site.
Referring now to Fig. 6 A-6B, shown in it, be suitable for the another example realizing nucleation site density spatial variations.In this embodiment, as shown in Figure 6A, the spatial variations of nucleation site density is that beam angle by adjusting ion beam in ion implantation step realizes.Although by various ways adjustment beam angle, but a kind of such method is as shown in Figure 6A relative to ion beam (such as spot beam 202) inclination donor semiconductor wafer 120.Donor semiconductor wafer 120 has a width (drawing is expressed as from left to right), a degree of depth (entering the page) and a height (drawing is expressed as from top to bottom).Width and degree of depth definable X-axis and Y direction, and height can define the longitudinal axis Lo perpendicular to injecting surface 121.Inclination donor semiconductor wafer 120 is to make its longitudinal axis Lo angled Φ of axis of orientation relative to ion implantation bundle (representing with filled arrows) in ion implantation step.Angle Φ can between about 1-45 °.
In an inclined state, along with beam source is from position A sweep to position B, the width W of beam 202 is changed to Wb on the injection surface 121 of donor semiconductor wafer 120 from width Wa, or vice versa.The change of change on the nucleation site density of the ion implantation come from along scanning direction (described scanning direction can be arranged to along at least one direction change in X-axis and Y direction) of width W has impact.
Inject ion beam 202 and can comprise hydrogen ion, this hydrogen ion has identical (just) electric charge.Owing to having the particulate mutual exclusion of identical charges, beam 202 is wider in the distance (position A) far away with ion source, and narrower in the distance (position B) nearer with ion source.The regional area of donor semiconductor wafer 120 is heated to compared to the higher degree of the ion beam not assembling (higher width Wa) at position A by the ion beam that B more assembles (lower width W b) in position.At relatively high temperatures, more hydrogen ions diffuse out from these regional areas, and the hydrogen ion comparing the less share in other region keeps motionless.As shown in Figure 6B, this causes the side direction heterogeneity of the hydrogen in the weakening thin layer 125 of donor semiconductor wafer 120 to distribute (and therefore making density unevenness one distribution in nucleation site).
By adjusting the angle of beam source or introducing the similar spatial change that some mechanisms known adjusting ion beam 202 collimation obtain nucleation site density.
The another technology being suitable for the spatial variations realizing nucleation site density adopts two benches ion implantation step.Perform the first ion implantation to inject the ion with the effect of attraction second radionuclide ion.After this, the ion of the second nucleic is injected.Use the ion describing herein and inject the first nucleic with any appropriate technology described afterwards in space heterogeneity mode.Therefore, when the second radionuclide ion is injected into and migrates to the first radionuclide ion, the weakening thin layer 125 obtained shows inhomogenous nucleation site density.
Such as, the first ion species can based on the material of donor semiconductor wafer 120, such as, adopt Si ion implantation in silicon donor semiconductor wafer 120.This silicon ion can have the characteristic of capturing such as hydrionic second radionuclide ion.As previously mentioned, hydrogen ion forms Si-H key with the combination of some semiconductor atoms of such as silicon atom.Such as, dosage known in the art and energy can perform silicon in silicon and inject, such as U.S. Patent No. 7,148, as described in 124, the full content of the document is incorporated herein by reference.But, unlike the prior art, the Spatial Density Distribution of trapping ion nucleic (being silicon in this case) is inhomogenous (such as the highest and minimum in opposite edges at an edge of donor semiconductor wafer 120, or other change described in having herein).Then, injected by the second radionuclide ion of such as hydrogen, this second radionuclide ion can be homogeneous distribution.The hydrogen quantity be trapped in the weakening thin layer 125 of donor semiconductor wafer 120 depends on two factors: (1) can capture the CONCENTRATION DISTRIBUTION in the site of the second nucleic (hydrogen), and (2) available hydrogen (injecting and the hydrogen retained from injection medicament).
Note, the heterogeneity spatial distribution of nucleic is reversible to obtain identical result.Such as, can inject the first nucleic equably, heterogeneity ground injects the second nucleic afterwards.Alternatively, two kinds of injections are all that space is inhomogenous.Second nucleic (such as hydrogen) causes point, edge or a region of maximum concentration hydrogen weakening the distribution of the heterogeneity in thin layer 125, be the position of the minimum temperature starting to split after this.
Equally, as seen in figs. 2a-2b, arrow A represents that exfoliation layer 122 is from the direction that donor semiconductor wafer 120 is separated and/or time controllable feature, is wherein separated to other point, edge and/or region in the time from point, edge and/or the regional spread weakening thin layer 125 because becoming.Under the background of nucleation site density spatial variations, donor semiconductor wafer 120 is warming up to the temperature being enough to be separated weakening thin layer 125 from the most highdensity point, edge and/or region.Occur under the high hydrogen concentration having found in silicon makes separation occur in 350 DEG C or lower temperature, but have and just can be separated under such as 450 DEG C or higher higher temperature compared with the silicon of low hydrogen concentration.Donor semiconductor wafer 120 is warming up to the spatial variations directionally basic another temperature along weakening thin layer 125 continuation separation be enough to because becoming in the density across weakening thin layer 125.
The special parameter of the degree of depth weakening thin layer 125 is changed to provide more details along the space of the ion implantation in the one or all direction in X-axis and Y direction referring now to coming from.No matter adopt what technology to realize such spatial variations, preferably make the fully low degree of depth between about 200-380nm and most high depth between about 400-425nm.Examine this change in another way closely, the difference between depth capacity and minimum-depth can between about 5-200%.
According to one or more aspect of the present invention, the beam angle by the ion beam in adjustment ion implantation step changes the degree of depth weakening thin layer 125 spatially.In fact, the process that composition graphs 6A-6B discusses also has applicability (noting not being considered to obtain the reason weakening thin layer 125 change in depth because becoming the mechanism changing temperature in beam width) to the degree of depth that adjustment weakens thin layer 125.
See Fig. 6 A and Fig. 7 A-7B, by changing, at least one realizes the spatial variations of the degree of depth of weakening thin layer 125 below: (1) inclination angle Φ (illustrate with reference to Fig. 6 A and describe); And (2) donor semiconductor wafer 120 is around the torsion of its longitudinal axis L o relative to the orientated axis of ion implantation bundle 202.Make to the adjustment of tilting and/or reverse to regulate by the raceway groove degree of the lattice structure of donor semiconductor wafer 120, wherein along with ion beam 202 scans across injection surface 121, these raceway grooves tend to aim at and misalignment in ion beam 202.Along with raceway groove degree changes spatially, the degree of depth weakening thin layer 125 also changes spatially.
Angle Φ can between about 1-10 ° and torsion angle can between about 1-45 °.
As above heuristically, further see Fig. 7 C and 7D, inject the degree of depth and become large along with inclination and reduce.For relatively little angle (such as 0-10 °), the relation injected between the degree of depth and inclination is mainly subject to the impact of raceway groove.For relatively large angle, cosine effect plays a major role.In other words, the film thickness that peels off obtained is proportional to injection cosine of an angle substantially.
As an alternative or additional, spatial variations step can comprise the energy level changing ion beam 202 and scan injection surface 121 across donor semiconductor wafer 120 to make ion beam 202, weakens thin layer 125 and changes spatially across donor semiconductor wafer 120 from the degree of depth injecting surface 121.
As shown in Figure 7 B, above-mentioned technology causes the side direction heterogeneity degree of depth of the weakening thin layer of donor semiconductor wafer 120 (or injecting the degree of depth).
Combine with the gradient of adjustment donor semiconductor wafer 202, the another parameter that can utilize to obtain spatial variations is the width of ion deposition distribution (or spreading).As shown in Figure 8 A, the ion distribution width (from top the end of to) by weakening thin layer 125 changes because of the inclination angle (being more generally beam angle) become in donor semiconductor wafer 120.Therefore, by changing inclination angle, the dispersion of distribution (as shown in Figure 8 B) obtaining spatial variations in thin layer 125 can weakened.Although be not intended to limit by any theory of operation, but believe that the various piece had compared with the weakening thin layer 125 of narrow ditribution width will be separated at lower temperatures compared to the various piece of the weakening thin layer 125 with the wider dispersion of distribution.Therefore, believing the characteristic of exfoliation layer 122 from the direction that donor semiconductor wafer 120 is separated and/or temperature control, wherein can be separated to other point, edge and/or region because becoming point, edge and/or a regional spread realizing from weakening thin layer 125 in time and temperature.
See Fig. 8 C, additional data is about inclination on spreading impact, and it has impact to the width injecting curve equally.Shown in Fig. 8 C, two kinds are injected the dosage used is identical.Although peak value H concentration is different, two infusions all peel off.Therefore, the difference between ± 0.1 ° and the tilt variation of ± 3 ° is significant for spreading.
See Fig. 9 A-9D, the another kind of technology changing weakening thin slice 125 degree of depth spatially comprises makes donor semiconductor wafer 120 experience rear injection material removal technique, changes spatially from the degree of depth injecting surface 121 to make weakening thin layer 125 across donor semiconductor wafer 120.As shown in Figure 9 A, donor semiconductor wafer 120 can experience some deterministic glossing or plasma-assisted chemical etching (PACE).The quantity of material that these technology allow Partial controll to be removed by glossing.Other method---comprise the heterogeneity material that reactive ion etching (RIE), chemico-mechanical polishing (CMP) and chemical wet corrosion also can have across exposed surface and remove, this be rule with reproducible.One or more in these or other technology can be used to introduce small change apart from the degree of depth injecting surface 121 weakening thin layer 125, such as, shown in Fig. 3 A, 4A, 4B, 4C those and other.Ion implantation step before material is removed can be that space is homogeneous or inhomogenous.
See Fig. 9 B and 9C, spatial variations step can comprise and on the injection surface 121 of donor semiconductor wafer 120, uses mask 220A or 220B in space heterogeneity mode, scans degree across injecting surface 121 to stop iontophoretic injection thus to change ion beam 202.Mask 220 can comprise the organic polymer of silicon dioxide, such as photoresist, and other.Possible deposition technique comprises plasma reinforced chemical vapour deposition (PECVD), spin coating, dimethyl silicone polymer (PDMS) embossing etc.Mask 220 thickness can be less than or be comparable to the desired depth weakening thin layer 125.Due to ion implantation to the degree of depth determined by the energy of incident ion, the barrier effect of mask 220 will change the main spatial modulation to the degree of depth of the injection nucleic in donor semiconductor wafer 120 into.Depend on the characteristic of deposition mas 220, by increasing length, dispersion ion to Ion paths to change raceway groove degree or other phenomenon obtains required characteristic.
As shown in fig. 9d (its illustrate weaken on all edges of thin layer 125 compared with low depth and the comparatively high depth towards its center), after being incorporated into substrate 102 or among, donor semiconductor wafer 120 is warming up to be enough to weakening the temperature that thin layer 125 is separated from the point of lowest depth, edge and/or region.Donor semiconductor wafer 120 is warming up to be enough to because becoming in the degree of depth from lowest depth to the spatial variations of most high depth the directionally basic another temperature along weakening thin layer 125 and continuing to be separated.
See Figure 10 A-10D and Figure 11, spatial variations step can comprise by inject surface 121 bore one or more blind hole 230 at least arrives weaken thin layer 125, and preferably by weaken thin layer 125 (Figure 10 B).Although be not intended to limit the invention to any theory of operation, but believe and to be incorporated among substrate 102 or afterwards (Figure 10 C), donor semiconductor wafer 120 being warming up to higher temperature will start to be separated (Figure 10 D) in blind hole 230 before not having the position of these blind holes to produce to be separated.As shown in figure 11, a row blind hole 230 can cause this some holes heterogeneity spatial distribution by injecting surface 121 is bored.Therefore, donor semiconductor wafer 120 is warming up to is enough to basic start to be separated directionally can realize to least concentration from maximum concentration because of the distribution become in blind hole 230 array along weakening thin layer 125 with the temperature continuing to be separated.
See Figure 12 A-12B, spatial variations step can comprise-Wen curve when making donor semiconductor wafer 120 experience heterogeneity, changes spatially across donor semiconductor wafer 120 to make the nucleation site density throughout each locus place weakening thin layer 125 or pressure.Such as, on the right side of the temperature gradient shown in Figure 12 A will be compared, the temperature of Yan Genggao puts on the left side of wafer 120.This temperature gradient applies when can applying or be incorporated into substrate 102 before bonding on the spot.Pass in time, if the process time is maintained at the separation threshold value lower than given technological temperature, then at least one in defect nucleation site and air pressure wherein increases (see Figure 12 B) across wafer 120 with the degree of change throughout weakening thin layer 125 in temperature gradient spatially because becoming.The separation threshold time of given technological temperature is contemplated to and follows Arrhenius relation, be wherein separated the inverse that threshold time index is proportional to the process time.Interested parameter is process time under technological temperature and the ratio being separated threshold time.Description herein or other any above-mentioned spatial variations parameter curve required obtain than curve by disengaging time m-during adjusting process.Then, donor semiconductor wafer 120 is warming up to be enough to weaken thin layer 125 from maximum process time-disengaging time ratio point, edge and/or a region be separated temperature.In the example shown, maximum process time-disengaging time is than the left side being in wafer 120.Donor semiconductor wafer 120 be warming up to subsequently be enough to because of become in change time-Wen curve from maximum process time-disengaging time than to minimum process time-disengaging time ratio and the directionally basic another temperature along weakening thin layer 125 and continuing to be separated.According to material characteristics and other factors, comprise ion species, dosage and the injection degree of depth, fully high process time-disengaging time than between about 0.9 and 0.5, and during minimum process m-disengaging time than between about 0 and 0.5.
Various mechanism can be used to combine in advance or combine to obtain the time-Wen curve of spatial variations on the spot.Such as, can adopt the inhomogenous conduction in one or more spaces, convection current or radiation heating techniques (backing, laser emission, visible/infrared lamp or other) to heat donor semiconductor wafer 120.In check time/temp gradient realizes obtaining any required curve by direct or indirect thermo-contact (conduction).The backing element of a kind of addressable, two-dimensional array can be adopted to obtain different curves based on computer control or programming.Use the local infrared irradiation of lamp such as used in rapid thermal annealing (radiation) may be utilized, and/or visible or near-infrared laser radiation can be utilized to provide local and the non-homogeneous heating (radiation) in space.Alternatively,---(conduction) or gas or fluid flowing is such as directly contacted and sprays (conduction/convection current)---time-Wen gradient that can be used to required by acquisition by the homogeneous of any means or the application of heterogeneity heating curve and the application of space heterogeneity cooling body.
Equally, these heating/cooling technologies can be combined in advance or use on the spot.About combination technology on the spot, such as be entitled as the U.S. Patent application No.11/417 of " HIGHTEMPERATUREANODICBONDINGAPPARATUS (anodic coupling apparatus) ", the bonder described in 445 (they are all openly incorporated herein as a reference) is adjustable to use according to the present invention.The management of the thermal radiation loss in bonder can be controlled, and therefore utilize-Wen gradient when obtaining, by infrared external reflection element being incorporated into around bonder periphery to minimize radiation loss and to make lip temperature rise to the highest.On the contrary, in bonder, the management of thermal radiation loss is controlled by introducing the infrared absorber of cooling, thus maximizes radiation loss and that lip temperature is down to is minimum.Many changes above in theme can be used to obtain the time-Wen gradient required.
Although with reference to specific embodiment, at this, invention has been described, should be appreciated that these embodiments are only the explanations to principle of the present invention and application.Therefore it should be understood that and can make many amendments to these illustrative embodiments, and other configuration can be visualized and do not deviate from the spirit and scope of the present invention as defined in appended claims.

Claims (16)

1. form a method for semiconductor-on-insulator (SOI) structure, comprising:
Make the injection of donor semiconductor wafer surface experience ion implantation step to form the weakening thin layer that cross section defines the exfoliation layer of described donor semiconductor wafer, wherein said donor semiconductor wafer have width, the degree of depth and height, described width and the degree of depth definition X-axis and Y direction and described height definition the longitudinal axis; And
Before described ion implantation step, among or make described donor semiconductor wafer experience spatial variations step afterwards, to make to result from the density in the nucleation site of described ion implantation step to change spatially along at least one direction in X-axis and Y direction across weakening section, wherein the density in nucleation site from the start edge of the weakening thin layer of described donor semiconductor wafer, starting point or initiation region, at least one direction X-axis and Y direction reduces gradually.
2. the method for claim 1, is characterized in that, the maximum local density in described nucleation site appears at 5x10 5site/cm 2the first area of weakening thin layer, and the minimum density in nucleation site appears at 5x10 4site/cm 2the second area of weakening thin layer, wherein said second area separates along at least one direction in X-axis and Y direction and described first area.
3. method as claimed in claim 2, is characterized in that, the maximum local density in the described nucleation site in the first area of described weakening thin layer is at least 10 times of the minimum nucleation site density in the second area of described weakening thin layer.
4. the method for claim 1, is characterized in that, also comprises and described donor semiconductor wafer is warming up to be enough to weakening thin layer place and to cause from point, limit and/or a region of the highest nucleation site density the temperature of separation.
5. method as claimed in claim 4, is characterized in that, also comprises the another temperature described donor semiconductor wafer being warming up to be enough to substantially directionally to continue along described weakening thin layer because becoming density change from most high density to least density in nucleation site separation.
6. the method as described in claim 4 or 5, is characterized in that, the time-Wen curve of raised temperature take several seconds as magnitude, to make to occur at least one second along weakening thin layer from most high density to the propagation of the separation of least density.
7. the method for claim 1, is characterized in that, described spatial variations step comprises and changes inject the dosage of ion along at least one director space in X-axis and Y direction.
8. the method for claim 1, it is characterized in that, described spatial variations step comprises space and changes the dosage injecting ion, thus along described donor semiconductor wafer weakening thin layer play initial line, there is fully high dosage in starting point or initiation region, and there is relatively low dosage continuing the position away from described initial line, starting point or initiation region along at least one direction in X-axis and Y direction.
9. method as claimed in claim 8, it is characterized in that, lowest dose level is the 70%-90% of abundant high dose.
10. method as claimed in claim 8, it is characterized in that, lowest dose level is at least 80% of abundant high dose.
11. methods as claimed in claim 8, it is characterized in that, described abundant high dose appears at along weakening in the starting point on the one or more limit of thin layer or initiation region, and relatively low dosage appears at the position of continuing away from described starting point and initiation region along X-axis and Y direction.
12. methods as claimed in claim 7, is characterized in that:
Described donor semiconductor wafer is rectangle; And
Described spatial variations step comprises changing spatially to be injected the dosage of ion and appears on each limit at least two limits of the weakening thin layer of described donor semiconductor wafer to make fully high dosage, and relatively low dosage to appear at from described at least two limits towards the center of described weakening thin layer continuously away from position.
13. methods as claimed in claim 12, it is characterized in that, described spatial variations step comprise change spatially the dosage that injects ion with on the whole limits making fully high dosage appear at described weakening thin layer and relatively low dosage to appear at towards the center of described weakening thin layer continuously away from position.
14. methods as claimed in claim 7, is characterized in that, during described spatial variations step occurs in described ion implantation step, and described ion implantation step comprises:
Inject the ion of the first nucleic in a uniform manner to form the weakening thin layer of homogeneous distribution; And
Inject the ion of the second nucleic in heterogeneity mode, the ion of described second nucleic causes atomic migration to described weakening thin layer thus, and this causes the nucleation site density across described weakening lamella space change.
15. methods as claimed in claim 14, is characterized in that, the ion of described first nucleic is hydrogen and the ion of described second nucleic is helium.
16. methods as claimed in claim 14, is characterized in that, the described step injecting the second radionuclide ion in heterogeneity mode comprise inject described second nucleic ion to change the degree of depth spatially across described donor semiconductor wafer.
CN200980143709.4A 2008-10-30 2009-10-29 Use orientation to peel off and form method for semiconductor and device on insulator structure Expired - Fee Related CN102203933B (en)

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