CN102201548A - Substrate for flexible luminescent device and preparation method thereof - Google Patents
Substrate for flexible luminescent device and preparation method thereof Download PDFInfo
- Publication number
- CN102201548A CN102201548A CN 201110096378 CN201110096378A CN102201548A CN 102201548 A CN102201548 A CN 102201548A CN 201110096378 CN201110096378 CN 201110096378 CN 201110096378 A CN201110096378 A CN 201110096378A CN 102201548 A CN102201548 A CN 102201548A
- Authority
- CN
- China
- Prior art keywords
- substrate
- inorganic light
- layer
- nano particle
- emitting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Abstract
The invention discloses a substrate for a flexible luminescent device, which comprises a flexible substrate and a conductive layer which are formed in one of the following two modes: 1, the flexible substrate is made of a transparent dielectric polymer material, the conductive layer is a thin-layer carbon nanotube, and inorganic luminous nanoparticles are filled in a gap of the thin-layer carbon nanotube; and 2, the flexible substrate is made of a transparent dielectric polymer material doped with the inorganic luminous nanoparticles, the conductive layer is made of the thin-layer carbon nanotube, and the transparent dielectric polymer material doped with the inorganic luminous nanoparticles is filled in the gap of the thin-layer carbon nanotube. By the substrate, the problems of low surface smoothness of the thin-layer carbon nanotube and low bonding force between the carbon nanotube and the flexible substrate are solved, and the electrical conductivity of the conductive layer and the blocking ability of the substrate on water oxygen are improved.
Description
Technical field
The present invention relates to the organic optoelectronic technical field, be specifically related to a kind of flexible luminescent device substrate and preparation method thereof.
Background technology
Photoelectron technology is the very high industry of scientific and technological content that develops rapidly after microelectric technique.Along with the fast development of photoelectron technology, photoelectron products such as solar cell, optical image transducer, flat-panel screens, thin-film transistor are all full-fledged gradually, and they have improved people's life greatly.Simultaneously, opto-electronic information technology has also been created growing great market in the extensive use of social life every field.Developed country all the optoelectronic information industry as one of field of giving priority to, the competition of the field of opto-electronic information just launches at world wide.
Photoelectron technology is the very high industry of scientific and technological content that develops rapidly after microelectric technique.Along with the fast development of photoelectron technology, photoelectron products such as solar cell, optical image transducer, flat-panel screens, thin-film transistor are all full-fledged gradually, and they have improved people's life greatly.Simultaneously, opto-electronic information technology has also been created growing great market in the extensive use of social life every field.Developed country all the optoelectronic information industry as one of field of giving priority to, the competition of the field of opto-electronic information just launches at world wide.
Organic optoelectronic device mostly is that preparation is at rigid substrates (on glass or silicon chip), though they have good device performance, anti-vibration at present, shock proof ability a little less than, weight is heavier relatively, and it is very not convenient to carry, and is very restricted in the application of some occasion.People begin to attempt to be deposited on organic optoelectronic device on the flexible base, board rather than on the rigid substrates.
With flexible base, board replace the benefit of rigid substrates be product lighter, be difficult for broken, institute takes up space little and be more convenient for carrying.But, although these advantages are arranged, replace rigid substrates also to have many restrictions with flexible base, board, the preparation of flexible device still has many underlying issues to need to solve.For flexible substrate, because the profile pattern of flexible substrate is also far away from rigid substrate, to handle equipment and the technology difficulty of wanting special bigger and flexible substrate is carried out surface smoothing, improved substrate production cost; The water of flexible substrate, oxygen permeability be much larger than rigid substrate, causes opto-electronic device to be subjected to the influence of the water oxygen that sees through from substrate, reduced the performance of device.
For electrode layer, conventional electrode layer material In
2O
3: SnO
2(ITO) there is following shortcoming in the electrode as flexible base, board: the indium among (1) ITO has severe toxicity, and is harmful in preparation and application; (2) In among the ITO
2O
3Cost an arm and a leg, cost is higher; (3) ito thin film is vulnerable to the reduction of hydrogen plasma, and effect reduces, and this phenomenon also can take place under low temperature, low plasma density; (4) phenomenon that conductivity descends can appear because of the bending of flexible substrate in the ito thin film on flexible substrate; (5) adopt thick ITO layer can reduce light transmittance, the light of 50-80% sponges at glass, ITO and organic layer, adopts thin ITO layer process difficulty bigger.Owing to having high mechanical strength and elasticity and good conductor characteristics, carbon nano-tube receives publicity.2006, people such as Canadian R.Martel (Appl.Phys.lett., 2006,88,183104) pointed out that the increase of carbon nano-tube film thickness can reduce the visible light transmissivity and the resistance of film.For carbon nano-tube film is obtained than high visible light transmissivity, just must reduce the thickness of carbon nano-tube film, increased side's resistance of carbon nano-tube film so again, make side's resistance of carbon nano-tube film obtain 10
3Ω/sq magnitude has reduced the carbon nano-tube film conductivity.
Therefore, if can solve above-mentioned these problems, will make opto-electronic device obtain using more widely and development more fast.
Summary of the invention
Technical problem to be solved by this invention is how a kind of flexible luminescent device substrate and preparation method thereof is provided, this substrate has solved the problem of adhesion difference between thin layer carbon nano tube surface poor flatness and carbon nano-tube and the flexible substrate, has improved the conductivity of conductive layer and the substrate obstructing capacity to water oxygen.
Technical problem proposed by the invention is to solve like this: a kind of flexible luminescent device substrate is provided, comprise flexible substrate and conductive layer, it is characterized in that, described flexible substrate and conductive layer are made of a kind of in the following dual mode: 1. flexible substrate is transparent dielectricity polymeric material, conductive layer is the thin layer carbon nano-tube, is filled with the inorganic light-emitting nano particle in the space of described thin layer carbon nano-tube; 2. flexible substrate is the transparent dielectricity polymeric material of doping inorganic light-emitting nano particle, conductive layer is the thin layer carbon nano-tube, be filled with the transparent dielectricity polymeric material of doping inorganic light-emitting nano particle in the space of described thin layer carbon nano-tube, the thickness of described thin layer carbon nano-tube is less than or equal to 100nm.
According to flexible luminescent device substrate provided by the present invention, it is characterized in that described inorganic light-emitting nanoparticle size is 1～50nm, 2. in the kind mode doping mass ratio of inorganic light-emitting nano particle be less than or equal to 40%.
According to flexible luminescent device substrate provided by the present invention, it is characterized in that, described inorganic light-emitting nano particle is to be luminous host with sulfide, oxide, fluoride, phosphate, vanadate, niobates, aluminate, molybdate etc., with the light-emitting particles of rare earth lanthanide as activator and co-activator.
According to flexible luminescent device substrate provided by the present invention, it is characterized in that described sulfide comprises zinc sulphide, lanthanum sulfide, calcium sulfide, cerium sulphide, praseodymium sulfide, neodymium sulfide, samaric sulfide and gadolinium sulfide; Described oxide comprises zinc oxide, yittrium oxide, titanium oxide, gadolinium oxide and luteium oxide; Described fluoride comprises yttrium fluoride, gadolinium fluoride, lanthanum fluoride and cerium fluoride; Described phosphate comprises lanthanum orthophosphate, Gadolinium monophosphate, strontium phosphate, yttrium phosphate and barium phosphate; Described vanadate comprises vanadic acid gadolinium, vanadic acid yttrium, vanadic acid lanthanum, cerium vanadate, vanadic acid calcium, lead vanadate and vanadic acid strontium; Described niobates comprises calcium niobate, niobic acid yttrium, niobic acid gadolinium and niobic acid lutetium; Described aluminate comprises yttrium aluminate, barium aluminate, aluminic acid gadolinium, calcium aluminate and strontium aluminate; Described molybdate comprises lanthanum molybdate, strontium molybdate and barium molybdate; Described rare earth lanthanide comprises europium, samarium, erbium, neodymium, terbium, dysprosium, samarium, cerium, ytterbium and praseodymium.
According to flexible luminescent device substrate provided by the present invention, it is characterized in that described transparent dielectricity polymeric material is one or more in polyethylene, polymethyl methacrylate, Merlon, polyurethanes, polyimides, vinyl chloride-vinyl acetate resin, polyacrylic acid, PAEK, Kynoar, polyester, PEN, polyacrylate, poly-paraphenylene terephthalamide's trimethyl hexamethylene diamine, polybutene and the polyvinyl alcohol.
A kind of flexible luminescent device is characterized in that with the preparation method of substrate, may further comprise the steps:
1. the rigid substrates (as glass or silicon chip) of surface roughness less than 1nm cleaned, clean the back and dry up with drying nitrogen;
2. take the mode of spin coating or spraying or self assembly or inkjet printing or silk screen printing on the rigid substrates of cleaning, to prepare carbon nanotube layer;
3. the transparent dielectricity polymeric layer of spin coating or spraying doping inorganic light-emitting nano particle on carbon nanotube layer, or first spin coating or drip and to be coated with or to spray the solution that contains the inorganic light-emitting nano particle, spin coating or drip and to be coated with or to spray transparent dielectricity polymeric layer again, described transparent dielectricity polymeric material is a polyethylene, polymethyl methacrylate, Merlon, polyurethanes, polyimides, vinyl chloride-vinyl acetate resin, polyacrylic acid, PAEK, Kynoar, polyester, PEN, polyacrylate, poly-paraphenylene terephthalamide's trimethyl hexamethylene diamine, in polybutene and the polyvinyl alcohol one or more;
4. the substrate to the good transparent dielectricity polymeric material of spin coating toasts;
5. the transparent dielectricity polymeric layer after carbon nanotube layer and the curing or the transparent dielectricity polymeric layer of doping inorganic light-emitting nano particle are peeled off the rigid substrates surface, form the compliant conductive substrate;
6. test the parameters of transmitance, conductivity and the surface topography of compliant conductive substrate.
Beneficial effect of the present invention: have the inorganic light-emitting nano particle in the conductive layer of the present invention, make conductive layer luminous under excitation light irradiation, not only strengthened luminous intensity, and simplified based on the structure of the luminescent device of this substrate and required material based on the luminescent device of this substrate; Conductive layer of the present invention prepares on the little rigid substrates of roughness, be filled with the transparent dielectricity polymeric material of inorganic light-emitting nano particle or doping inorganic light-emitting nano particle in the conductive layer space, utilize adhesion between transparent dielectricity polymeric material and the electrode material to be better than the characteristic of electrode material and rigid substrates, the electrode layer of preparation on the little rigid substrates of roughness peeled off, improved the evenness of the electrode layer surface on the flexible substrate; Adopt transparent dielectricity polymeric material as effective the seeing through of block water oxygen of flexible substrate, transparent dielectricity polymeric material of the present invention has the characteristics of high visible light transmissivity simultaneously, and the substrate visible light transmissivity is improved.
Description of drawings
Fig. 1 is the structural representation of the flexible luminescent device of embodiment of the invention 1-9 with substrate;
Fig. 2 is the visible light transmissivity of the substrate in the embodiment of the invention 1.
Wherein, 1, flexible substrate, 2, conductive layer.
Embodiment
Below in conjunction with accompanying drawing and embodiment the present invention is further described:
Technical scheme of the present invention provides a kind of flexible luminescent device substrate, and as shown in Figure 1, the structure of device comprises flexible substrate 1, conductive layer 2.
Below be specific embodiments of the invention:
Board structure as shown in Figure 1, flexible substrate 1 adopts transparent dielectricity polymeric material, described transparent dielectricity polymeric material is a polyethylene, conductive layer 2 adopts carbon nano-tube, fill the inorganic light-emitting nano particle in the space of described carbon nanotube layer, described inorganic light-emitting nano particle is of a size of 50nm, and described carbon nano-tube layer thickness is 100 nanometers.
The preparation method is as follows:
1. the silicon substrate of surface roughness less than 1nm cleaned, clean the back and dry up with drying nitrogen;
2. even carbon nanotube is dispersed in the solvent, takes the spin coating mode to prepare carbon nanotube layer on the silicon substrate of cleaning, rotating speed is 4000 revolutions per seconds during spin coating, duration 50 seconds, and thickness is about 100 nanometers;
3. the solution of spraying inorganic light-emitting nano particle on carbon nanotube layer is placed silicon substrate 30 minutes in 80 ℃ environment, removes solvent remaining in the carbon nanotube layer, again spraying polyethylene solution on carbon nanotube layer;
4. the substrate to the good polyethylene film of spin coating toasts;
5. carbon nanotube layer and polyethylene film are peeled off the silicon substrate surface, form the compliant conductive substrate;
6. test the parameters of transmitance, conductivity and the surface topography of compliant conductive substrate.
Board structure as shown in Figure 1, flexible substrate 1 adopts transparent dielectricity polymeric material polymethyl methacrylate, conductive layer 2 adopts carbon nano-tube, fill the inorganic light-emitting nano particle in the space of described carbon nanotube layer, described inorganic light-emitting nano particle is of a size of 30nm, and described carbon nano-tube layer thickness is 90 nanometers.
The preparation method is similar to embodiment 1.
Embodiment 3
Board structure as shown in Figure 1, flexible substrate 1 adopts transparent dielectricity polymeric material, described transparent dielectricity polymeric material comprises 90% polymethyl methacrylate, 10% Merlon, conductive layer 2 adopts carbon nano-tube, fill the inorganic light-emitting nano particle in the space of described carbon nanotube layer, described inorganic light-emitting nano particle is of a size of 25nm, and described carbon nano-tube layer thickness is 80 nanometers.
The preparation method is similar to embodiment 1.
Embodiment 4
Board structure as shown in Figure 1, flexible substrate 1 adopts the transparent dielectricity polymeric material of doping inorganic light-emitting nano particle, the doping mass ratio of described inorganic light-emitting nano particle is 5%, described transparent dielectricity polymeric material comprises 90% polymethyl methacrylate, 10% Merlon, conductive layer 2 adopts carbon nano-tube, fill the transparent dielectricity polymeric material of doping inorganic light-emitting nano particle in the space of described carbon nanotube layer, described inorganic light-emitting nano particle is of a size of 15nm, and described carbon nano-tube layer thickness is 70 nanometers.
The preparation method is similar to embodiment 1.
Embodiment 5
Board structure as shown in Figure 1, flexible substrate 1 adopts the transparent dielectricity polymeric material of doping inorganic light-emitting nano particle, the doping mass ratio of described inorganic light-emitting nano particle is 10%, described transparent dielectricity polymeric material comprises 80% polyurethanes, 10% polyimides and 10% polybutene, conductive layer 2 adopts carbon nano-tube, fill the transparent dielectricity polymeric material of doping inorganic light-emitting nano particle in the space of described carbon nanotube layer, described inorganic light-emitting nano particle is of a size of 10nm, and described carbon nano-tube layer thickness is 60 nanometers.
The preparation method is similar to embodiment 1.
Embodiment 6
Board structure as shown in Figure 1, flexible substrate 1 adopts the transparent dielectricity polymeric material of doping inorganic light-emitting nano particle, the doping mass ratio of described inorganic light-emitting nano particle is 15%, described transparent dielectricity polymeric material comprises 85% Kynoar, 10% polyethylene and 5% polybutene, conductive layer 2 adopts carbon nano-tube, fill the transparent dielectricity polymeric material of doping inorganic light-emitting nano particle in the space of described carbon nanotube layer, described inorganic light-emitting nano particle is of a size of 10nm, and described carbon nano-tube layer thickness is 50 nanometers.
The preparation method is similar to embodiment 1.
Embodiment 7
Board structure as shown in Figure 1, flexible substrate 1 adopts the transparent dielectricity polymeric material of doping inorganic light-emitting nano particle, the doping mass ratio of described inorganic light-emitting nano particle is 20%, described transparent dielectricity polymeric material comprises 88% polyester, 6% polyethylene, 4% polybutene and 2% Kynoar, conductive layer 2 adopts carbon nano-tube, fill the transparent dielectricity polymeric material of doping inorganic light-emitting nano particle in the space of described carbon nanotube layer, described inorganic light-emitting nano particle is of a size of 1nm, and described carbon nano-tube layer thickness is 40 nanometers.
The preparation method is similar to embodiment 1.
Embodiment 8
Board structure as shown in Figure 1, flexible substrate 1 adopts the transparent dielectricity polymeric material of doping inorganic light-emitting nano particle, the doping mass ratio of described inorganic light-emitting nano particle is 30%, described transparent dielectricity polymeric material comprises 80% polyester, 10% polymethyl methacrylate, 6% PEN and 4% Kynoar, conductive layer 2 adopts carbon nano-tube, fill the transparent dielectricity polymeric material of doping inorganic light-emitting nano particle in the space of described carbon nanotube layer, described inorganic light-emitting nano particle is of a size of 5nm, and described carbon nano-tube layer thickness is 70 nanometers.
The preparation method is similar to embodiment 1.
Embodiment 9
Board structure as shown in Figure 1, flexible substrate 1 adopts the transparent dielectricity polymeric material of doping inorganic light-emitting nano particle, the doping mass ratio of described inorganic light-emitting nano particle is 40%, described transparent dielectricity polymeric material comprises 81% polyimides, 9% PEN, 5% polyurethanes and 5% polyacrylate, conductive layer 2 adopts carbon nano-tube, fill the transparent dielectricity polymeric material of doping inorganic light-emitting nano particle in the space of described carbon nanotube layer, described inorganic light-emitting nano particle is of a size of 15nm, and described carbon nano-tube layer thickness is 80 nanometers.
The preparation method is similar to embodiment 1.
Claims (6)
1. flexible luminescent device substrate, comprise flexible substrate and conductive layer, it is characterized in that, described flexible substrate and conductive layer are made of a kind of in the following dual mode: 1. flexible substrate is transparent dielectricity polymeric material, conductive layer is the thin layer carbon nano-tube, is filled with the inorganic light-emitting nano particle in the space of described thin layer carbon nano-tube; 2. flexible substrate is the transparent dielectricity polymeric material of doping inorganic light-emitting nano particle, conductive layer is the thin layer carbon nano-tube, be filled with the transparent dielectricity polymeric material of doping inorganic light-emitting nano particle in the space of described thin layer carbon nano-tube, the thickness of described thin layer carbon nano-tube is less than or equal to 100nm.
2. flexible luminescent device substrate according to claim 1 is characterized in that described inorganic light-emitting nanoparticle size is 1～50nm, 2. in the kind mode doping mass ratio of inorganic light-emitting nano particle be less than or equal to 40%.
3. flexible luminescent device substrate according to claim 1, it is characterized in that, described inorganic light-emitting nano particle is to be luminous host with sulfide, oxide, fluoride, phosphate, vanadate, niobates, aluminate or molybdate, with the light-emitting particles of rare earth lanthanide as activator and co-activator.
4. flexible luminescent device substrate according to claim 3 is characterized in that described sulfide comprises zinc sulphide, lanthanum sulfide, calcium sulfide, cerium sulphide, praseodymium sulfide, neodymium sulfide, samaric sulfide and gadolinium sulfide; Described oxide comprises zinc oxide, yittrium oxide, titanium oxide, gadolinium oxide and luteium oxide; Described fluoride comprises yttrium fluoride, gadolinium fluoride, lanthanum fluoride and cerium fluoride; Described phosphate comprises lanthanum orthophosphate, Gadolinium monophosphate, strontium phosphate, yttrium phosphate and barium phosphate; Described vanadate comprises vanadic acid gadolinium, vanadic acid yttrium, vanadic acid lanthanum, cerium vanadate, vanadic acid calcium, lead vanadate and vanadic acid strontium; Described niobates comprises calcium niobate, niobic acid yttrium, niobic acid gadolinium and niobic acid lutetium; Described aluminate comprises yttrium aluminate, barium aluminate, aluminic acid gadolinium, calcium aluminate and strontium aluminate; Described molybdate comprises lanthanum molybdate, strontium molybdate and barium molybdate; Described rare earth lanthanide comprises europium, samarium, erbium, neodymium, terbium, dysprosium, samarium, cerium, ytterbium and praseodymium.
5. flexible luminescent device substrate according to claim 1, it is characterized in that described transparent dielectricity polymeric material is one or more in polyethylene, polymethyl methacrylate, Merlon, polyurethanes, polyimides, vinyl chloride-vinyl acetate resin, polyacrylic acid, PAEK, Kynoar, polyester, PEN, polyacrylate, poly-paraphenylene terephthalamide's trimethyl hexamethylene diamine, polybutene and the polyvinyl alcohol.
6. the preparation method of a flexible luminescent device usefulness substrate is characterized in that, may further comprise the steps:
1. the rigid substrates of surface roughness less than 1nm cleaned, clean the back and dry up with drying nitrogen;
2. take the mode of spin coating or spraying or self assembly or inkjet printing or silk screen printing on the rigid substrates of cleaning, to prepare carbon nanotube layer;
3. the transparent dielectricity polymeric layer of spin coating or spraying doping inorganic light-emitting nano particle on carbon nanotube layer, or first spin coating or drip and to be coated with or to spray the solution that contains the inorganic light-emitting nano particle, spin coating or drip and to be coated with or to spray transparent dielectricity polymeric layer again, described transparent dielectricity polymeric material is a polyethylene, polymethyl methacrylate, Merlon, polyurethanes, polyimides, vinyl chloride-vinyl acetate resin, polyacrylic acid, PAEK, Kynoar, polyester, PEN, polyacrylate, poly-paraphenylene terephthalamide's trimethyl hexamethylene diamine, in polybutene and the polyvinyl alcohol one or more;
4. the substrate to the good transparent dielectricity polymeric material of spin coating toasts;
5. the transparent dielectricity polymeric layer after carbon nanotube layer and the curing or the transparent dielectricity polymeric layer of doping inorganic light-emitting nano particle are peeled off the rigid substrates surface, form the compliant conductive substrate;
6. test the parameters of transmitance, conductivity and the surface topography of compliant conductive substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110096378.2A CN102201548B (en) | 2011-04-18 | 2011-04-18 | Substrate for flexible luminescent device and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110096378.2A CN102201548B (en) | 2011-04-18 | 2011-04-18 | Substrate for flexible luminescent device and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102201548A true CN102201548A (en) | 2011-09-28 |
| CN102201548B CN102201548B (en) | 2014-04-23 |
Family
ID=44662059
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201110096378.2A Expired - Fee Related CN102201548B (en) | 2011-04-18 | 2011-04-18 | Substrate for flexible luminescent device and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102201548B (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103963408A (en) * | 2014-04-30 | 2014-08-06 | 电子科技大学 | Method for preparing high dielectric polymer composite film |
| CN104616838A (en) * | 2015-02-10 | 2015-05-13 | 京东方科技集团股份有限公司 | Manufacturing method of electronic device and electronic device |
| CN104766932A (en) * | 2015-04-22 | 2015-07-08 | 电子科技大学 | Biodegradable baseplate used for soft light electron device and manufacturing method thereof |
| WO2017076135A1 (en) * | 2015-11-04 | 2017-05-11 | 广州华睿光电材料有限公司 | Electroluminescent device, preparation method thereof and ink composition |
| CN113447174A (en) * | 2021-06-25 | 2021-09-28 | 安徽熙泰智能科技有限公司 | Micro OLED laminated packaging structure stress testing method and Micro OLED laminated packaging structure |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101165883A (en) * | 2006-10-17 | 2008-04-23 | 三星电子株式会社 | Transparent carbon nanotube electrode using conductive dispersant and production method thereof |
| US20100133516A1 (en) * | 2008-11-28 | 2010-06-03 | Korean University Industrial & Academic Collaboration Foundation | Carbon nano tube thin film transistor and display adopting the same |
-
2011
- 2011-04-18 CN CN201110096378.2A patent/CN102201548B/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101165883A (en) * | 2006-10-17 | 2008-04-23 | 三星电子株式会社 | Transparent carbon nanotube electrode using conductive dispersant and production method thereof |
| US20100133516A1 (en) * | 2008-11-28 | 2010-06-03 | Korean University Industrial & Academic Collaboration Foundation | Carbon nano tube thin film transistor and display adopting the same |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103963408A (en) * | 2014-04-30 | 2014-08-06 | 电子科技大学 | Method for preparing high dielectric polymer composite film |
| CN104616838A (en) * | 2015-02-10 | 2015-05-13 | 京东方科技集团股份有限公司 | Manufacturing method of electronic device and electronic device |
| CN104616838B (en) * | 2015-02-10 | 2018-02-06 | 京东方科技集团股份有限公司 | The preparation method and electronic device of a kind of electronic device |
| US10332914B2 (en) | 2015-02-10 | 2019-06-25 | Boe Technology Group Co., Ltd. | Method of manufacturing electronic device and electronic device |
| CN104766932A (en) * | 2015-04-22 | 2015-07-08 | 电子科技大学 | Biodegradable baseplate used for soft light electron device and manufacturing method thereof |
| WO2017076135A1 (en) * | 2015-11-04 | 2017-05-11 | 广州华睿光电材料有限公司 | Electroluminescent device, preparation method thereof and ink composition |
| CN113447174A (en) * | 2021-06-25 | 2021-09-28 | 安徽熙泰智能科技有限公司 | Micro OLED laminated packaging structure stress testing method and Micro OLED laminated packaging structure |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102201548B (en) | 2014-04-23 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102201549B (en) | Substrate for flexible light emitting device and fabrication method thereof | |
| US9824789B2 (en) | Method for producing nanowire-polymer composite electrodes | |
| JP6823591B2 (en) | Property-enhancing fillers for transparent coatings and transparent conductive films | |
| EP2660891B1 (en) | Method for manufacturing a substrate for an organic light-emitting device | |
| CN102201548B (en) | Substrate for flexible luminescent device and preparation method thereof | |
| JP5937300B2 (en) | Transparent conductive coating with filler material | |
| CN102201538A (en) | Substrate for flexible photoelectronic device and preparation method thereof | |
| CN103608944B (en) | Substrate for organic electrode device | |
| CN102208547B (en) | Substrate for flexible photoelectronic device and preparation method thereof | |
| JP6300419B2 (en) | Organic light emitting diode with light extraction layer | |
| TWI556269B (en) | Transparent conductor, method for preparing the same and optical display including the same | |
| JP2008536710A (en) | Method for adhesion transfer of carbon nanotube layer | |
| CN102087886A (en) | Silver nanowire-based transparent conductive thin film and preparation method thereof | |
| CN103443211A (en) | Nanostructured articles | |
| JP2017024401A (en) | Plastic substrate and display device including the same | |
| KR20140076268A (en) | Substrate having transparent electrode for flexible display and method of fabricating the same | |
| JP2015504384A (en) | Base film for manufacturing transparent electrode film | |
| JP2012204022A (en) | Transparent conductive film, base material with transparent conductive film and organic electroluminescent element using the same | |
| CN102208569B (en) | Substrate for flexible luminescent device and preparation method thereof | |
| CN102208546A (en) | Flexible substrate used in optoelectronic device and preparation method thereof | |
| KR20170016145A (en) | Methods of preparing conductors, conductors prepared therefrom, and electronic devices including the same | |
| KR20140091403A (en) | Electrode structure and method of fabricating thereof, display device having thereof | |
| CN102227017A (en) | Flexible base plate used in luminescent device and preparation method thereof | |
| JP2011029038A (en) | Method of manufacturing base material with transparent conductive film | |
| WO2015164764A1 (en) | Colloids containing polyaramide |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20140423 Termination date: 20150418 |
|
| EXPY | Termination of patent right or utility model |