CN102201520A - LED (Light Emitting Diode) packaging structure and manufacturing method thereof - Google Patents
LED (Light Emitting Diode) packaging structure and manufacturing method thereof Download PDFInfo
- Publication number
- CN102201520A CN102201520A CN2010101334904A CN201010133490A CN102201520A CN 102201520 A CN102201520 A CN 102201520A CN 2010101334904 A CN2010101334904 A CN 2010101334904A CN 201010133490 A CN201010133490 A CN 201010133490A CN 102201520 A CN102201520 A CN 102201520A
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- metal substrate
- resilient coating
- luminescence chip
- matrix
- encapsulating structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
Abstract
The invention provides an LED (Light Emitting Diode) packaging structure which comprises a metal substrate, a light emitting chip and a buffer layer, wherein the light emitting chip is arranged on the metal substrate; the buffer layer is arranged between the light emitting chip and the metal substrate to connect the light emitting chip and the metal substrate, and comprises a base body and a plurality of conductive particles, the plurality of conductive particles are filled in the base body which is made of a soft epoxy resin, each conductive particle includes a resin particle and a metal layer used for cladding the resin particle, and the plurality of conductive particles are electrically connected with the light emitting chip and the metal substrate. In addition, the invention also relates to a method for manufacturing the LED packaging structure.
Description
Technical field
The present invention relates to a kind of LED encapsulating structure, and a kind of method of making this LED encapsulating structure.
Background technology
At present, (Light Emitting Diode, LED) characteristic such as good and luminous efficiency height replaces cold-cathode fluorescence lamp (Cold Cathode FluorescentLamp CCFL), becomes the light-emitting component in the lighting device light-emitting diode gradually because of the tool light quality.
Existing LED is arranged on a substrate with this luminescence chip normally after making luminescence chip, on metallic plate, again by follow-up processing procedure, as making after the package lens.Described metallic plate is used to carry this luminescence chip on the one hand, also can be used on the other hand luminescence chip is dispelled the heat.
Yet, existing luminescence chip, it is difficult to be complementary with metallic plate on heat-conductive characteristic usually, for example, because luminescence chip material coefficient of thermal expansion coefficient (Coefficient ofThermal Expansion, CTE) thermal expansion coefficient difference with metallic sheet material is bigger, when luminescence chip gives out heat, be easy to generate thermal stress between this luminescence chip and this metallic plate, thereby cause between the two mutual extrusion and be out of shape.Therefore, all are difficult to preferably reach the needs of producing and using in the job stability of this LED and useful life.
In view of this, provide the LED encapsulating structure of the preferable job stability of a kind of tool real for necessary.
Summary of the invention
Below the LED encapsulating structure of the preferable job stability of a kind of tool will be described with embodiment, and a kind of method of making this LED encapsulating structure.
A kind of LED encapsulating structure, it comprises a metal substrate, a luminescence chip and a resilient coating.This luminescence chip is arranged on this metal substrate.This resilient coating is arranged between this luminescence chip and this metal substrate to be connected this luminescence chip and this metal substrate.This resilient coating comprises a matrix and is filled in the interior a plurality of electrically conductive particles of this matrix, this matrix is a soft epoxy resin, each electrically conductive particles comprises a resin particle and a metal level that coats this resin particle, and these a plurality of electrically conductive particles electrically connect this luminescence chip and this metal substrate.
A kind of manufacture method of LED encapsulating structure, comprise: a metal substrate is provided and on this metal substrate, forms a resilient coating, this resilient coating comprises a matrix and is filled in the interior a plurality of electrically conductive particles of this matrix, and this matrix is an epoxy resin, and each electrically conductive particles comprises a resin particle and a metal level that is formed on this resin particle outer surface; Provide a luminescence chip also this luminescence chip to be arranged on this resilient coating, so that this resilient coating is between this luminescence chip and this metal substrate; This resilient coating of heat makes it softening, and makes this luminescence chip and this metal substrate close mutually, thereby pushes a plurality of electrically conductive particles in this matrix, so that it contacts respectively with this luminescence chip and this metal substrate and forms electric connection; Cool off this resilient coating, so that this resilient coating solidifies gradually.
With respect to prior art, this LED encapsulating structure adopts resilient coating to connect luminescence chip and metal substrate, because this resilient coating comprises a matrix and is filled in the interior a plurality of electrically conductive particles of this matrix, and this matrix is a soft epoxy resin, it has the stress buffer effect, guaranteeing to electrically connect under the prerequisite of this luminescence chip and this metal substrate, this resilient coating can avoid between luminescence chip and the metal substrate because the distortion that mutual extrusion is produced when being heated, thereby guarantees the stable performance and the useful life of LED encapsulating structure.
Description of drawings
Fig. 1 is the cutaway view of the LED encapsulating structure that provides of the embodiment of the invention.
Fig. 2 is the cutaway view of electrically conductive particles in the LED encapsulating structure shown in Figure 1.
Fig. 3 is the flow chart of LED encapsulating structure manufacture method provided by the invention.
Fig. 4 is step 102 provided in the manufacture method shown in Figure 3 metal substrate and the schematic diagram of resilient coating.
Fig. 5 is the structural representation of the luminescence chip that step 104 provided in the manufacture method shown in Figure 3.
Fig. 6 is a schematic diagram of implementing the encapsulating structure of the pairing luminescence chip in step 104～108 and resilient coating and metal substrate in the manufacture method shown in Figure 3.
Fig. 7 is the schematic diagram that further forms the electrode contact mat of luminescence chip on the basis of Fig. 6.
Fig. 8 is the schematic diagram of further implementation step 110 formed LED encapsulating structures on the basis of Fig. 7.
Fig. 9 is the structural representation that adopts the LED of LED encapsulating structure shown in Figure 8.
The main element symbol description
Electrically conductive particles 162
PN junction 142
Resin particle 1620
Embodiment
The present invention is described in further detail below in conjunction with accompanying drawing.
See also Fig. 1, the embodiment of the invention provides a kind of LED encapsulating structure 100, and it comprises a metal substrate 12, a luminescence chip 14 and a resilient coating 16.
This metal substrate 12 roughly is square, and its material can be copper or other suitable metal or metal alloy, and as aluminum or aluminum alloy etc., preferably, this metal substrate 12 adopts copper alloys to make.
This luminescence chip 14 is a led chip, and it specifically can be and comprises nitride, as the led chip of gallium nitride.Certainly, this luminescence chip 14 also can adopt other material, as phosphide, or arsenide etc.
This luminescence chip 14 is arranged on this metal substrate 12.Particularly, this resilient coating 16 is set between this luminescence chip 14 and this metal substrate 12, this resilient coating 16 connects this luminescence chip 14 and this metal substrate 12.
Please consult Fig. 2 together, this resilient coating 16 comprises a matrix 160 and is filled in the interior a plurality of electrically conductive particles 162 of this matrix.The material of this matrix 160 is soft epoxy resin (softep oxy).Each electrically conductive particles 162 comprises a resin particle 1620 and a metal level 1622 that is formed on this resin particle outer surface, as shown in Figure 2.Resin particle has elasticity, and its material can be acrylic resin, and the material of metal level can be nickel, gold, silver or tin etc., and preferably, the material of metal level can be for comprising the alloy of Jin Yuxi.These a plurality of electrically conductive particles 162 to be shaped as approximate circle spherical.In the present embodiment, these a plurality of electrically conductive particles 162 can stacked settings and are in contact with one another, and are in the superiors and undermost electrically conductive particles 162 and contact with metal substrate 12 and luminescence chip 14 respectively, as shown in Figure 1.Be understandable that these a plurality of electrically conductive particles 162 also can the individual layer settings and contacted with metal substrate 12 and luminescence chip 14.
Because the material of the matrix 160 of this resilient coating 16 is soft epoxy resin, it has the stress buffer effect.And a plurality of electrically conductive particles 162 that are filled in this matrix 160 contact respectively with luminescence chip 14 with metal substrate 12, thereby electrically connect this luminescence chip 14 and this metal substrate 12.Therefore this resilient coating 16 is guaranteeing to electrically connect under the prerequisite of this luminescence chip 14 and this metal substrate 12, also can avoid between luminescence chip 14 and the metal substrate 12 because the distortion that mutual extrusion is produced when being heated, thereby guarantee the stable performance and the useful life of LED encapsulating structure 100.
Please together with reference to figure 3, the present invention also provides a kind of method of making above-mentioned LED encapsulating structure 100, and it comprises step (102)～(110).
(102) provide a metal substrate and on this metal substrate, form a resilient coating, this resilient coating comprises a matrix and is filled in the interior a plurality of electrically conductive particles of this matrix, and this matrix is an epoxy resin, and each electrically conductive particles comprises a resin particle and a metal level that is formed on this resin particle outer surface.
As shown in Figure 4, the thickness of the resilient coating 16 that present embodiment provided is greater than 10 μ m and less than 35 μ m, and its area is approximately 100 μ m * 100 μ m.The diameter of each electrically conductive particles 162 is greater than 1 μ m and less than 15 μ m.The area of this metal substrate 12 is greater than the area of resilient coating 16.
(104) provide a luminescence chip also this luminescence chip to be arranged on this resilient coating, so that this resilient coating is between this luminescence chip and this metal substrate.
The structure of the luminescence chip 14 that is provided in the step (104) as shown in Figure 5, it is the led chip of a vertical stratification, specifically comprise 140, P types of a substrate (substrate) layer 141, a PN junction 142 and a N type layer 143, wherein, set gradually N type layer 143, PN junction 142, P type layer 141 by substrate 140 to a side away from substrate 140, wherein, P type layer 141 contacts with resilient coating 16.The area of the area of this luminescence chip 14 and resilient coating 16 is roughly suitable.
(106) this resilient coating of heat makes it softening, and makes this luminescence chip and this metal substrate close mutually, thereby pushes a plurality of electrically conductive particles in this matrix, so that it contacts respectively with this luminescence chip and this metal substrate and forms electric connection.
Please together with reference to figure 6, in the present embodiment, the temperature that heats this resilient coating 16 is approximately 200 ℃.Be understandable that, under 200 ℃ hot environment, the material of matrix 160, be that epoxy resin will soften and flows to the periphery of resilient coating 16, when further luminescence chip 14 being exerted pressure with the direction of vertical and close this resilient coating 16, the a plurality of electrically conductive particles 162 that are filled in the matrix 160 will be pushed by luminescence chip 14 and metal substrate 12, thus mutually near and be in contact with one another, and further contact respectively with luminescence chip 14 and metal substrate 12.Be understandable that the pressure that is applied on the luminescence chip 14 can according to circumstances be decided, for example, can suitably increase this pressure, thereby make a plurality of electrically conductive particles 162 be produced distortion by this luminescence chip 14 and metal substrate 12 compressions.In the present embodiment, preferably, the deflection of this electrically conductive particles 162 is greater than 40%, and after it was compressed, the contact area of itself and metal substrate 12 and luminescence chip 14 was bigger, and correspondingly, contact resistance is less.
(108) cool off this resilient coating, so that this resilient coating solidifies gradually.
In step (108), metal substrate 12, luminescence chip 14 and resilient coating 16 can be placed at room temperature, make that the temperature in the resilient coating 16 descends gradually.Be understandable that because the material of matrix 160 is an epoxy resin, it is a thermosetting resin, therefore, when it exposes at room temperature, it will solidify gradually.
Be understandable that, in the process of cooling resilient coating 16, the pressure that is applied to resilient coating 16 both sides can keep, after making that matrix 160 fully solidifies, electrically conductive particles 162 in the matrix 160 can keep the certain deformation amount, thereby increases the contact area of itself and metal substrate 12 and luminescence chip 14.Certainly the pressure that is applied to resilient coating 16 both sides also can be cancelled, and like this, the material in the matrix 160 is not when fully solidifying, and the electrically conductive particles 162 in the matrix 160 is resilience gradually, makes in the resilient coating 16 because the stress that matrix 160 distortion are produced reduces.
Behind implementation step (102)～(108), can further the substrate 140 of luminescence chip 14 be removed.Specifically can adopt etching solution that this substrate 140 is etched away, further, can on the regional area of N type layer 143, form an electrode contact mat 145, thereby form LED encapsulating structure 100 shown in Figure 7.This electrode contact mat 145 can be made by metal materials such as silver, copper, aluminium.In the present embodiment, this electrode contact mat 145 is a goldleaf.
Please consult Fig. 8 together, after forming described LED encapsulating structure 100, can further comprise step:
(110) offer a conductive hole that runs through this metal substrate in the zone that metal substrate is not provided with this resilient coating, and further filled conductive material in this conductive hole, form an insulating barrier on the madial wall of this conductive hole so that this conductive materials and this metal substrate mutually insulated.
As shown in Figure 8, this conductive hole 18 can be for a circular hole, and as the frustroconical through hole, certainly, it also can be the through hole of other shape, as cylindrical hole, or square opening etc.The material of this insulating barrier 180 can be a silicon dioxide.The material of this conductive materials 182 can be copper or copper alloy.
Further, LED encapsulating structure 100 shown in Figure 8 also can further be processed to form a complete LED200 as shown in Figure 9 via follow-up step.
LED200 as shown in Figure 9, its concrete processing is that first electrode contact mat 145 with luminescence chip 14 connects (wire bonding) to the conductive materials 182 of conductive hole 18 by routing.Reflection cavity 20 of moulding on metal substrate 12 is made lens 22 with silica gel in the reflection cavity 20 then, metal substrate 12 is welded on the circuit board 24 by reflow soldering process with tin cream more at last.
Be understandable that those skilled in the art also can do other variation in spirit of the present invention, as long as it does not depart from technique effect of the present invention and all can.The variation that these are done according to spirit of the present invention all should be included within the present invention's scope required for protection.
Claims (10)
1. LED encapsulating structure, it comprises:
A metal substrate;
A luminescence chip, it is arranged on this metal substrate; And
A resilient coating, this resilient coating is arranged between this luminescence chip and this metal substrate to be connected this luminescence chip and this metal substrate, this resilient coating comprises a matrix and is filled in the interior a plurality of electrically conductive particles of this matrix, this matrix is a soft epoxy resin, each electrically conductive particles comprises a resin particle and a metal level that coats this resin particle, and these a plurality of electrically conductive particles electrically connect this luminescence chip and this metal substrate.
2. LED encapsulating structure as claimed in claim 1 is characterized in that this resin particle has elasticity.
3. LED encapsulating structure as claimed in claim 1 is characterized in that, the thickness of this resilient coating is greater than 10 μ m and less than 35 μ m.
4. LED encapsulating structure as claimed in claim 1 is characterized in that, the diameter of this each electrically conductive particles is greater than 1 μ m and less than 15 μ m.
5. LED encapsulating structure as claimed in claim 1, it is characterized in that, the area of this metal substrate is greater than the area of resilient coating, this metal substrate is not provided with the zone of this resilient coating and offers a conductive hole that runs through this metal substrate, filled conductive material in this conductive hole forms an insulating barrier so that this conductive materials and this metal substrate mutually insulated on the madial wall of this conductive hole.
6. LED encapsulating structure as claimed in claim 5 is characterized in that, this conductive materials is copper or copper alloy.
7. LED encapsulating structure as claimed in claim 1 is characterized in that, the material of this metal substrate is copper or copper alloy.
8. the manufacture method of a LED encapsulating structure comprises:
A metal substrate is provided and on this metal substrate, forms a resilient coating, this resilient coating comprises a matrix and is filled in the interior a plurality of electrically conductive particles of this matrix, and this matrix is an epoxy resin, and each electrically conductive particles comprises a resin particle and a metal level that is formed on this resin particle outer surface;
Provide a luminescence chip also this luminescence chip to be arranged on this resilient coating, so that this resilient coating is between this luminescence chip and this metal substrate;
This resilient coating of heat makes it softening, and makes this luminescence chip and this metal substrate close mutually, thereby pushes a plurality of electrically conductive particles in this matrix, so that it contacts respectively with this luminescence chip and this metal substrate and forms electric connection;
Cool off this resilient coating, so that this resilient coating solidifies gradually.
9. manufacture method as claimed in claim 8, it is characterized in that, further comprise step: a conductive hole that runs through this metal substrate is offered in the zone that this resilient coating is not set at metal substrate, and further filled conductive material in this conductive hole, form an insulating barrier on the madial wall of this conductive hole so that this conductive materials and this metal substrate mutually insulated.
10. manufacture method as claimed in claim 8 is characterized in that, keeps being applied to the pressure of these resilient coating both sides in the solidification process of resilient coating.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010101334904A CN102201520A (en) | 2010-03-26 | 2010-03-26 | LED (Light Emitting Diode) packaging structure and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010101334904A CN102201520A (en) | 2010-03-26 | 2010-03-26 | LED (Light Emitting Diode) packaging structure and manufacturing method thereof |
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| Publication Number | Publication Date |
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| CN102201520A true CN102201520A (en) | 2011-09-28 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN2010101334904A Pending CN102201520A (en) | 2010-03-26 | 2010-03-26 | LED (Light Emitting Diode) packaging structure and manufacturing method thereof |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6388321B1 (en) * | 1999-06-29 | 2002-05-14 | Kabushiki Kaisha Toshiba | Anisotropic conductive film and resin filling gap between a flip-chip and circuit board |
| US20020096254A1 (en) * | 2001-01-22 | 2002-07-25 | Michael Kober | Optical device module and method of fabrication |
| CN101060157A (en) * | 2006-04-17 | 2007-10-24 | 三星电机株式会社 | Light emitting diode package and fabrication method thereof |
| US20080043444A1 (en) * | 2004-04-27 | 2008-02-21 | Kyocera Corporation | Wiring Board for Light-Emitting Element |
| CN101447541A (en) * | 2007-11-26 | 2009-06-03 | 斯坦雷电气株式会社 | Semiconductor device |
-
2010
- 2010-03-26 CN CN2010101334904A patent/CN102201520A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6388321B1 (en) * | 1999-06-29 | 2002-05-14 | Kabushiki Kaisha Toshiba | Anisotropic conductive film and resin filling gap between a flip-chip and circuit board |
| US20020096254A1 (en) * | 2001-01-22 | 2002-07-25 | Michael Kober | Optical device module and method of fabrication |
| US20080043444A1 (en) * | 2004-04-27 | 2008-02-21 | Kyocera Corporation | Wiring Board for Light-Emitting Element |
| CN101060157A (en) * | 2006-04-17 | 2007-10-24 | 三星电机株式会社 | Light emitting diode package and fabrication method thereof |
| CN101447541A (en) * | 2007-11-26 | 2009-06-03 | 斯坦雷电气株式会社 | Semiconductor device |
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Application publication date: 20110928 |