CN102201485A - Ion beam surface cleaning method for amorphous tellurium-cadmium-mercury infrared detector - Google Patents
Ion beam surface cleaning method for amorphous tellurium-cadmium-mercury infrared detector Download PDFInfo
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- CN102201485A CN102201485A CN2010101291330A CN201010129133A CN102201485A CN 102201485 A CN102201485 A CN 102201485A CN 2010101291330 A CN2010101291330 A CN 2010101291330A CN 201010129133 A CN201010129133 A CN 201010129133A CN 102201485 A CN102201485 A CN 102201485A
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Abstract
The invention discloses an ion beam surface cleaning method for an amorphous tellurium-cadmium-mercury infrared detector, which is characterized by comprising the following steps of: fixing a detector chip on a sampling table in a vacuum cavity, adjusting the inclined angle of the sampling table to 4.5 degrees, and setting the temperature of the sampling table to 10 DEG C, and vacuumizing the vacuum cavity until the vacuum degree reaches 6*10<-4>Pa; introducing working gases into the vacuum cavity, setting the gas flow to be between 4.0 and 5.0sccm, and setting the working pressure to be between 1.5*10<-2>Pa and 2.0*10<-2>Pa; setting an ion source parameter, wherein the ion beam energy is 150 to 200eV, the ion beam current is 40 to 60mA, and the neutralization current is 50 to 80mA; and lifting a baffle plate between an ion source and the sampling table, and performing etch cleaning on the amorphous tellurium-cadmium-mercury surface of the detector chip for 30 to 60 seconds. By the method, adhesive force between a passivating film and a photosensitive element and adhesive force between an upper electrode and the photosensitive element can be obviously improved, and the yield of the amorphous tellurium-cadmium-mercury infrared detector is improved.
Description
Technical field
The present invention relates to a kind of amorphous cadmium-telluride-mercury infrared detector ion beam method for cleaning surface, belong to Infrared Detectors manufacturing technology field.
Background technology
In the existing technology of amorphous cadmium-telluride-mercury infrared detector preparation, be grown in the phenomenon that the passivating film (being mainly ZnS) on the amorphous mercury cadmium telluride be full of cracks occurs even peels off easily; In addition, the phenomenon come off in a large number also takes place in the top electrode of the photosensitive unit of amorphous mercury cadmium telluride easily, the rate of finished products that causes the amorphous cadmium-telluride-mercury infrared detector of these problems reduces greatly, and the main cause that produces these problems is between passivating film and the photosensitive unit of amorphous mercury cadmium telluride and the poor adhesive force between top electrode and the photosensitive unit of amorphous mercury cadmium telluride.The adhesion property that improves between photosensitive unit and its follow-up deposit film becomes one of key technology among the amorphous cadmium-telluride-mercury infrared detector preparation technology.
Improve the adhesive force between rete, can realize by the cleanliness factor that improves amorphous mercury cadmium telluride surface.At present, the method for the cleanliness factor on raising amorphous mercury cadmium telluride surface mainly contains wet etching and dry etching.Wet etching exists serious side etching phenomenon and the uncontrollable shortcoming of corrosion rate, also exists corrosion meron cleaning reagent residual and absorption to be difficult to the deficiency of thoroughly removing; Conventional dry etching cleans main using plasma, required base vacuum degree is about 10Pa, operating air pressure is about 100Pa, such vacuum environment can form secondary pollution to amorphous mercury cadmium telluride surface, and the glow discharging process poor stability of generation plasma, occur spark phenomenon easily, cause some impurity materials to be deposited in the substrate, reduced the rate of finished products of detector.
Summary of the invention
Deficiency at prior art exists based on ion beam etching (IBE) technology, the invention provides the method on a kind of effective cleaning amorphous mercury cadmium telluride surface, can significantly improve the adhesive force between rete under the prerequisite that does not change its thing phase.
Amorphous cadmium-telluride-mercury infrared detector ion beam method for cleaning surface of the present invention, its concrete steps are as follows:
(1) in vacuum cavity detector chip is fixed on the sample stage, the sample stage inclination angle is adjusted into 4.5 °, the sample stage temperature is set to 10 ℃, then vacuum cavity is vacuumized, and makes vacuum degree reach 6 * 10
-4Pa;
(2) feed working gas in vacuum cavity, and gas flow is set between 4.0sccm～5.0sccm, operating pressure is set at 1.5 * 10
-2Pa～2.0 * 10
-2Pa;
(3) source parameters is set: ion beam energy is 150eV～200eV, and ion beam current is 40mA～60mA, in and electric current be 50mA～80mA;
(4) baffle plate between rise ion source and sample stage carries out etching to the amorphous mercury cadmium telluride surface of detector chip and cleans, and scavenging period is 30s～60s.
Above-mentioned ion beam method for cleaning surface, being equally applicable to the noncrystal membrane material is the infrared detector photosensitive elements cleaning of materials.
The present invention is by using proof: significantly improved between passivating film and the photosensitive unit and the adhesive force between top electrode and the photosensitive unit, and can guarantee that crystallization does not take place the amorphous mercury cadmium telluride, obviously improved the rate of finished products of amorphous cadmium-telluride-mercury infrared detector, it is simple to have processing step, controllability is good, can carry out advantages such as large tracts of land operation.
Description of drawings
Fig. 1 is the ZnS passivating film micro-image of growth before and after the amorphous mercury cadmium telluride surface ion Shu Qingxi, and wherein, Fig. 1 (a) is for cleaning the passivating film micro-image of growing without ion beam on the amorphous mercury cadmium telluride, and passivating film be full of cracks occurs even peels off as can be seen; The passivating film micro-image of Fig. 1 (b) on the amorphous mercury cadmium telluride, growing after cleaning through ion beam, this passivating film surfacing, smooth.
Fig. 2 is the Cr/Au electrode of metal micro-image of growth before and after the amorphous mercury cadmium telluride surface ion Shu Qingxi, and wherein, Fig. 2 (a) is for cleaning the top electrode micro-image of growing without ion beam on the amorphous mercury cadmium telluride, and top electrode comes off in a large number as can be seen; The top electrode micro-image of Fig. 2 (b) on the amorphous mercury cadmium telluride, growing after cleaning through ion beam, the complete obscission that do not occur of top electrode.
Fig. 3 is X-ray diffraction (XRD) collection of illustrative plates before and after the amorphous mercury cadmium telluride surface ion Shu Qingxi, shows that the structure of ion beam cleaning front and back amorphous mercury cadmium telluride does not change, and still keeps amorphous thing phase.
Embodiment
Below in conjunction with accompanying drawing, by embodiment the present invention is described in further details, but protection scope of the present invention is not limited to the following examples.
Embodiment one:
Present embodiment cleans for argon gas (Ar) ion beam is carried out on amorphous mercury cadmium telluride surface, then in the situation of amorphous mercury cadmium telluride surface deposition ZnS passivation film.The basic condition of sample is: substrate is 2cm * 2cm silicon substrate, amorphous mercury cadmium telluride thin film thickness 700nm.Specific embodiment and condition that ion cleans are:
The sample stage inclination angle is adjusted into 4.5 °, and the sample stage temperature is set to 10 ℃, and base vacuum is 6 * 10
-4Pa, argon gas (Ar) flow is 4.0sccm, operating pressure is set to 1.5 * 10
-2Pa, ion beam energy are 150eV, and ion beam current is 40mA, in and electric current be 50mA, scavenging period is 45s.
After ion beam cleans,, through subsequent techniques such as photoetching moulding, do not see the passivating film obscission, shown in Fig. 1 (b) again at amorphous mercury cadmium telluride surface deposition ZnS passivation film.After tested, mercury cadmium telluride keeps amorphous state.
Embodiment two:
Present embodiment cleans for argon gas (Ar) ion beam is carried out on amorphous mercury cadmium telluride surface, then in the situation of amorphous mercury cadmium telluride surface deposition Cr/Au metal electrode film.The basic condition of sample is: substrate is 2cm * 2cm silicon substrate, amorphous mercury cadmium telluride thin film thickness 700nm.Specific embodiment and condition that ion cleans are:
The sample stage inclination angle is adjusted into 4.5 °, and the sample stage temperature is set to 10 ℃, and base vacuum is 6 * 10
-4Pa, argon gas (Ar) flow is 4.8sccm, operating pressure is set to 2.0 * 10
-2Pa, ion beam energy are 200eV, and ion beam current is 60mA, in and electric current be 80mA, scavenging period is 30s.
After ion beam cleans,, through subsequent techniques such as photoetching moulding, do not see metal electrode film obscission, shown in Fig. 2 (b) again at amorphous mercury cadmium telluride surface deposition Cr/Au metal electrode film.After tested, mercury cadmium telluride keeps amorphous state.
Used working gas also can be that nitrogen, helium, neon are at all interior inert gases among the embodiment.
The described ion beam method for cleaning surface of the foregoing description is applicable to that also with amorphous silicon or amorphous vanadium oxide be the infrared detector photosensitive elements cleaning of materials.
Clean by ion beam being carried out on amorphous mercury cadmium telluride surface, significantly improved the attachment characteristic between rete, improved the rate of finished products of Infrared Detectors with the inventive method.
Claims (3)
1. amorphous cadmium-telluride-mercury infrared detector ion beam method for cleaning surface is characterized in that comprising following concrete steps:
(1) in vacuum cavity, detector chip is fixed on the sample stage, the sample stage inclination angle is adjusted into 4.5 °, the sample stage temperature is set to 10 ℃, then vacuum cavity is vacuumized, and makes vacuum degree reach 6 * 10
-4Pa;
(2) feed working gas in vacuum cavity, and gas flow is set between 4.0sccm～5.0sccm, operating pressure is set at 1.5 * 10
-2Pa～2.0 * 10
-2Pa;
(3) source parameters is set: ion beam energy is 150eV～200eV, and ion beam current is 40mA～60mA, in and electric current be 50mA～80mA;
(4) baffle plate between rise ion source and sample stage carries out etching to the amorphous mercury cadmium telluride surface of detector chip and cleans, and scavenging period is 30s～60s.
2. ion beam method for cleaning surface according to claim 1 is characterized in that working gas is an inert gas.
3. ion beam method for cleaning surface according to claim 1 and 2, it is characterized in that being used for the noncrystal membrane material is the infrared detector photosensitive elements cleaning of materials.
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| CN2010101291330A CN102201485B (en) | 2010-03-22 | 2010-03-22 | Ion beam surface cleaning method for amorphous tellurium-cadmium-mercury infrared detector |
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| CN102201485B CN102201485B (en) | 2012-07-25 |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1215436A (en) * | 1996-04-04 | 1999-04-28 | 钴碳化钨硬质合金公司 | Boron and nitrogen containing coating and method for making |
| CN101006208A (en) * | 2004-08-02 | 2007-07-25 | 秦内蒂克有限公司 | Manufacture of cadmium mercury telluride on patterned silicon |
| US20080217622A1 (en) * | 2007-03-08 | 2008-09-11 | Amit Goyal | Novel, semiconductor-based, large-area, flexible, electronic devices |
| CN101373712A (en) * | 2008-09-11 | 2009-02-25 | 北京有色金属研究总院 | Method for preparing transparent conductive oxide CuAlO2 thin film |
| CN101531074A (en) * | 2009-04-02 | 2009-09-16 | 天津师范大学 | Ultrahard TiB2/Si3N4 nano-multilayer film and preparation method thereof |
-
2010
- 2010-03-22 CN CN2010101291330A patent/CN102201485B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1215436A (en) * | 1996-04-04 | 1999-04-28 | 钴碳化钨硬质合金公司 | Boron and nitrogen containing coating and method for making |
| CN101006208A (en) * | 2004-08-02 | 2007-07-25 | 秦内蒂克有限公司 | Manufacture of cadmium mercury telluride on patterned silicon |
| US20080217622A1 (en) * | 2007-03-08 | 2008-09-11 | Amit Goyal | Novel, semiconductor-based, large-area, flexible, electronic devices |
| CN101373712A (en) * | 2008-09-11 | 2009-02-25 | 北京有色金属研究总院 | Method for preparing transparent conductive oxide CuAlO2 thin film |
| CN101531074A (en) * | 2009-04-02 | 2009-09-16 | 天津师范大学 | Ultrahard TiB2/Si3N4 nano-multilayer film and preparation method thereof |
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Application publication date: 20110928 Assignee: Yunnan North Queensland Photoelectric Technology Development Co., Ltd. Assignor: Kunming Inst. of Physics Contract record no.: 2013530000083 Denomination of invention: Ion beam surface cleaning method for amorphous tellurium-cadmium-mercury infrared detector Granted publication date: 20120725 License type: Exclusive License Record date: 20130729 |
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