CN102201422B - Concave complementary metal-oxide-semiconductor (CMOS) image sensor and manufacturing method thereof - Google Patents
Concave complementary metal-oxide-semiconductor (CMOS) image sensor and manufacturing method thereof Download PDFInfo
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- CN102201422B CN102201422B CN201110106339.6A CN201110106339A CN102201422B CN 102201422 B CN102201422 B CN 102201422B CN 201110106339 A CN201110106339 A CN 201110106339A CN 102201422 B CN102201422 B CN 102201422B
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Abstract
The invention relates to a concave complementary metal-oxide-semiconductor (CMOS) image sensor and a manufacturing method thereof. In one embodiment, a concave CMOS image sensor is provided, and the concave CMOS image sensor comprises a substrate and a plurality of separate light-sensitive unit arrays, wherein the substrate comprises a bendable material; the plurality of separate light-sensitive unit arrays are positioned on the substrate; and each of the plurality of separate light-sensitive unit arrays comprises at least one light-sensitive unit, and the substrate is bendable, so that the plurality of separate light-sensitive unit arrays are allowed to form a concave face facing a lens. The concave CMOS image sensor enables lights to be vertically irradiated on the light-sensitive unit arrays generally, so that the light crosstalk between adjacent light-sensitive units is at least partially reduced.
Description
Technical field
The present invention relates to technical field of semiconductors, more specifically, the present invention relates to a kind of concave surface cmos image sensor and manufacture method thereof.
Background technology
Along with the development of semiconductor technology, imageing sensor has been widely used in the various fields that need to carry out digital imagery, such as, in the electronic product such as digital camera, Digital Video.According to the difference of photoelectric conversion mode, imageing sensor can be divided into two classes conventionally: charge coupled device (Charge Coupled Device, CCD) imageing sensor and complementary metal oxide semiconductors (CMOS) (CMOS) imageing sensor.Wherein, cmos image sensor has the advantages such as volume is little, low in energy consumption, production cost is low, therefore, cmos image sensor is easy to be integrated in the mancarried electronic aids such as such as mobile phone, notebook computer, panel computer, uses as the camera module that digital imagery function is provided.
Camera module is made up of imageing sensor and camera lens conventionally.Along with portable equipment is day by day lightening, in order to reduce volume or thickness, it is more and more nearer that the distance in camera module between camera lens and imageing sensor is also designed to be.But, camera lens and imageing sensor spacing cross closely can cause incident ray via can not vertical irradiation after camera lens refraction on imageing sensor, in the light after refraction and imageing sensor, the normal of photosensitive unit is certain angle, and at imageing sensor edge, this phenomenon is particularly evident.
The structure that imageing sensor adopts array to arrange conventionally, each unit of image sensor array is called as photosensitive unit, and it is made up of the filter coating on pixel cell, pixel cell and lenticule.The imageing sensor of arranging for array, the light of non-perpendicular irradiation, after lenticule and filter coating through a photosensitive unit in photosensitive unit array, can partly be irradiated on the pixel cell of adjacent photosensitive unit, thereby cause optical crosstalk.For color cmos image sensors, the optical crosstalk between adjacent photosensitive unit can produce colour mixture problem, and then affects image quality.
In prior art, a kind of method that can be used for reducing optical crosstalk is to compensate with the camera lens of many lens combinations, with make light substantially vertical irradiation to each photosensitive unit.But, the lens construction of very difficult integrated complex on the camera module of small volume, and cost of manufacture is also higher.
Summary of the invention
Visible, a kind of concave surface cmos image sensor need to be provided, make through the light of camera lens refraction substantially vertical irradiation on the photosensitive unit array of imageing sensor, to reduce the optical crosstalk between adjacent photosensitive unit.
In order to address the above problem, according in the embodiment of one aspect of the invention, provide a kind of concave surface cmos image sensor, comprising: substrate, described substrate comprises flexible material; And be positioned at the photosensitive unit array of described suprabasil multiple separation, each in the photosensitive unit array of described multiple separation comprises at least one photosensitive unit, wherein, described substrate is flexible, thereby allows the photosensitive unit array of described multiple separation to form the concave surface towards camera lens.
In embodiment according to a further aspect of the invention, a kind of concave surface cmos image sensing element is also provided, comprising: substrate, described substrate comprises flexible material; Be positioned at the photosensitive unit array of described suprabasil multiple separation, each in the photosensitive unit array of described multiple separation comprises at least one photosensitive unit; And support, described support comprises bending supporting surface, and wherein, described substrate is flexible, and is fixed on the supporting surface of described support, and the curvature of described supporting surface makes the photosensitive unit array of described multiple separation form the concave surface towards camera lens.
In embodiment according to a further aspect of the invention, a kind of camera is also provided, comprise a kind of concave surface cmos image sensing element, described concave surface cmos image sensing element comprises: substrate, described substrate comprises flexible material; Be positioned at the photosensitive unit array of described suprabasil multiple separation, each in the photosensitive unit array of described multiple separation comprises at least one photosensitive unit; And support, described support comprises bending supporting surface, and wherein, described substrate is flexible, and is fixed on the supporting surface of described support, and the curvature of described supporting surface makes the photosensitive unit array of described multiple separation form the concave surface towards camera lens.
According in the embodiment of another aspect of the invention, a kind of method of manufacturing back-illuminated type concave surface cmos image sensor is also provided, comprising:
A. on the first surface of the first substrate, prepare multiple pixel unit array, be arranged in the dielectric layer in described multiple pixel unit array and be distributed in described dielectric layer for being communicated with the metal wire of described multiple pixel unit array;
B. on described dielectric layer, deposit thin film, described film comprises flexible material;
C. from the first substrate described in second attenuate of described the first substrate to predetermined thickness;
D. from second filter coating array and microlens array that formation is corresponding with described multiple pixel unit array of described the first substrate, each pixel unit array forms photosensitive unit array jointly with corresponding filter coating array and microlens array; And
E. from the first substrate described in second etching of described the first substrate, thereby make not exist between described multiple pixel unit array described the first substrate, and make the residual thickness of described dielectric layer in predetermined thickness range,
Wherein, described film is flexible, thereby allows the pixel unit array forming surface of described multiple separation to the concave surface of camera lens, and wherein, the order of described steps d and described step e can be exchanged.
Compared with prior art, concave surface cmos image sensor of the present invention comprises the photosensitive unit array of multiple separation, the photosensitive unit array of these separation can be arranged with the direction that is suitable for camera lens refracted ray, thereby make light substantially vertical irradiation to photosensitive unit array, and then reduce at least in part the optical crosstalk between adjacent photosensitive unit.In addition, adopt the camera module of concave surface cmos image sensor of the present invention, can simplify the design of camera lens, thereby reduce costs.
Above characteristic of the present invention and other characteristics are set forth embodiment part hereinafter clearly.
Brief description of the drawings
By reading the following detailed description to non-limiting example with reference to accompanying drawing, can more easily understand features, objects and advantages of the invention.Wherein, same or analogous Reference numeral represents same or analogous device.
Fig. 1 (a) shows the vertical view of concave surface cmos image sensor according to an embodiment of the invention;
Fig. 1 (b) shows the cutaway view of the concave surface cmos image sensor shown in Fig. 1 (a) along A-A ' direction;
Fig. 2 (a) shows the vertical view of concave surface cmos image sensor according to an embodiment of the invention;
Fig. 2 (b) shows according to one embodiment of the invention, and the concave surface cmos image sensor shown in Fig. 2 (a) is along the cutaway view of B-B ' direction;
Fig. 2 (c) shows according to a further embodiment of the invention, and the concave surface cmos image sensor shown in Fig. 2 (a) is along the cutaway view of B-B ' direction;
Fig. 3 shows the cutaway view of concave surface cmos image sensing element according to an embodiment of the invention;
Fig. 4 shows the flow process of manufacturing according to an embodiment of the invention back-illuminated type concave surface cmos image sensor;
Fig. 5 (a) shows the cutaway view of manufacturing according to an embodiment of the invention back-illuminated type concave surface cmos image sensor flow process to Fig. 5 (e);
Fig. 6 (a) shows the cutaway view of manufacturing in accordance with another embodiment of the present invention back-illuminated type concave surface cmos image sensor flow process to Fig. 6 (h).
Embodiment
Discuss enforcement and the use of embodiment below in detail.But, should be appreciated that discussed specific embodiment only exemplarily illustrates and implements and use ad hoc fashion of the present invention, but not limit the scope of the invention.
With reference to figure 1 (a), show the vertical view of concave surface cmos image sensor according to an embodiment of the invention.This concave surface cmos image sensor comprises substrate 101 and is positioned at the photosensitive unit array 103 of the multiple separation in described substrate 101, and wherein, each in the photosensitive unit array 103 of described multiple separation comprises at least one photosensitive unit.
Particularly, the flexible high-molecular organic material such as substrate 101 comprises flexible material, such as polyimides, therefore, substrate 101 is flexible, thereby allows photosensitive unit array 103 forming surfaces of described multiple separation to the concave surface of camera lens.It should be noted that, here alleged flexible, refer under certain External Force Acting, easily there is suitable deformation in substrate 101, relative position with the photosensitive unit array 103 that drives the multiple separation in substrate 101 changes, substrate 101 and each photosensitive unit array 103 be structural be connected substantially constant.
One of ordinary skill in the art will appreciate that, in Fig. 1 (a), the quantity of photosensitive unit array 103 is only example, in actual applications, according to the difference of concave surface cmos image sensor resolution, in concave surface cmos image sensor, in the quantity of photosensitive unit array 103, each photosensitive unit array 103, the quantity of photosensitive unit and arrangement mode also can be different.In the embodiment shown in Fig. 1 (a), in each photosensitive unit array 103 quantity of photosensitive unit and inner arrange identical, and the photosensitive unit array 103 of described multiple separation regularly array arrangement in substrate 103.In this case, the row resolution of this concave surface cmos image sensor equals the summation of the row resolution of a row photosensitive unit array 103, and the column split rate of this concave surface cmos image sensor equals the summation of the column split rate of a line photosensitive unit array 103.In another embodiment, the quantity of the photosensitive unit that in substrate 101, multiple photosensitive unit arrays 103 comprise can be incomplete same, the area of the photosensitive unit array 103 of for example substrate 101 zone lines (i.e. the region of close camera lens primary optical axis) is larger, the photosensitive unit that comprises a greater number, and the area of the photosensitive unit array 103 of substrate 101 fringe regions is less, the photosensitive unit comprising is also less.Due to the common inflexibility of photosensitive unit array 103, therefore, after the stressed bending of substrate 101, can avoid not matching with bending substrate 101 compared with the photosensitive unit array 103 of small size, and then occur the problem of image error.In a preferred embodiment, in the photosensitive unit array 103 of multiple separation of concave surface cmos image sensor, the row or column of each in photosensitive unit array 103 over half comprises no more than 16 photosensitive units.
It should be noted that alleged separation here refers to that the semiconductor substrate region that forms photodiode, MOS transistor etc. in each photosensitive unit array 103 separates mutually; But different photosensitive unit arrays 103, for example,, with photosensitive unit array 103 adjacent in a line and/or same row, still can be communicated with by metal wire 105 therebetween in the photosensitive unit array 103 of array arrangement.Wherein, according to the difference of the photosensitive unit quantity comprising in photosensitive unit array 103, and the difference of photosensitive unit arrangement mode, the quantity of the metal wire between adjacent photosensitive unit array 103 is also different.In one embodiment, part metals line 105 in this concave surface cmos image sensor, for example metal wire 105 over half, length can be greater than the spacing of photosensitive unit array 103, to make substrate 101 after stressed bending, metal wire 105 still can extend certain length and not rupture, thereby ensures interconnecting of 103 of photosensitive unit arrays.The length of alleged metal wire 105 in this article, refers to the length of the metal wire 105 between different photosensitive unit arrays 103, and does not comprise that metal wire 105 is positioned at the region of photosensitive unit array 103.In a preferred embodiment, the length of metal wire 105 is greater than 1.05 times of described multiple photosensitive unit array 103 spacing.Alternatively, metal wire 105 is for example copper cash, aluminum steel or other interconnect materials.
With reference to figure 1 (b), show the cutaway view along A-A ' direction according to the concave surface cmos image sensor shown in Fig. 1 (a).Wherein, in this concave surface cmos image sensor, every a line of each photosensitive unit array 103 comprises 4 photosensitive units.But the quantity that should be understood that photosensitive unit is only example, in actual applications, in each photosensitive unit array 103, the quantity of photosensitive unit can be according to the needs of image sensor resolutions and different.
As shown in Fig. 1 (b), after applying certain external force, substrate 101 can bend, thereby makes substrate 101 be concave structure, and the photosurface of the photosensitive unit array 103 of the multiple separation in substrate 101 is converged to camera lens (not shown) direction.
Can find out according to Fig. 1 (b), for the photosensitive unit array 103 of diverse location in substrate 101, after the stressed bending of substrate 101, its offset amplitude may be variant.Especially, for the primary optical axis of camera lens, far away apart from primary optical axis, the offset amplitude of photosensitive unit array 103 is larger, and the normal of photosensitive unit array 103 photosurfaces and the angle of primary optical axis are also larger.In one embodiment, in the photosensitive unit array 103 of multiple separation, the acute angle that exists the normal (being the normal of photosurface) of two photosensitive unit arrays 103 to form is greater than 10 degree, thereby makes photosensitive unit array 103 forming surfaces of described multiple separation to the concave surface of camera lens.
In actual applications, the skew deviation between refracted ray and the camera lens primary optical axis of produced color difference at least in part in the position of photosensitive unit array 103 in substrate 101, thus make light substantially vertical incidence be irradiated on the photosurface of each photosensitive unit array 103.Like this, the light being irradiated on photosensitive unit can not be irradiated on adjacent photosensitive unit through photosensitive unit, and this has just effectively reduced the optical crosstalk between adjacent photosensitive unit, thereby improves the quality of IMAQ.
In one embodiment, this concave surface cmos image sensor also comprises the medium of the low-transmittance between the photosensitive unit array 103 of multiple separation, and to reduce light transmitted flux, the medium of this low-transmittance is for example light transmittance lower than 10% material.The medium of described low-transmittance is for filling space between photosensitive unit array 103 disconnected from each other, further prevents or reduced contingent optical crosstalk between different photosensitive unit arrays 103.Especially, only include the situation of a photosensitive unit for each photosensitive unit array 103, the medium of described low-transmittance further reduces or has substantially eliminated the optical crosstalk between adjacent photosensitive unit.
According to the difference of embodiment, this concave surface cmos image sensor can be color cmos image sensors, can be also black and white cmos image sensor.In one embodiment, this concave surface cmos image sensor is color cmos image sensors, wherein, each photosensitive unit comprises: pixel cell 107, be positioned at the filter coating 109 on described pixel cell 107 and be positioned at the lenticule 111 on described filter coating 109.
With reference to figure 2 (a), show the vertical view of concave surface cmos image sensor according to an embodiment of the invention.Fig. 2 (b) shows according to one embodiment of the invention, and the concave surface cmos image sensor shown in Fig. 2 (a) is along the cutaway view of B-B ' direction.
As shown in Fig. 2 (a) and Fig. 2 (b), concave surface cmos image sensor comprises substrate 201 and is positioned at the photosensitive unit array 203 of the multiple separation in described substrate 201, wherein, each in the photosensitive unit array 203 of described multiple separation only comprises a photosensitive unit.Further, the flexible high-molecular organic material such as substrate 201 comprises flexible material, such as polyimides, therefore, substrate 201 is flexible, thereby allows photosensitive unit array 203 forming surfaces of described multiple separation to the concave surface of camera lens.
In one embodiment, this concave surface cmos image sensor is back-illuminated cmos image sensors.So-called " back-illuminated cmos image sensors ", refer to for substrate 201, in photosensitive unit array 203, be positioned at the upperside interconnection layer of metal wire and dielectric layer formation for the pixel cell of sensitization, first light can be irradiated on the photodiode of pixel cell, this has just been avoided interconnection layer to affect light incident, thus the sensitivity that increases sensitive volume and improve imageing sensor.
Particularly, each photosensitive unit comprises pixel cell 207, filter coating 209 and lenticule 211, and in addition, this concave surface cmos image sensor also comprises the interconnection layer 204 between substrate 201 and pixel cell 207.This interconnection layer 204 is made up of the metal wire 205 in dielectric layer 206 and dielectric layer 206 and lead block (not shown), this metal wire 205 and lead block can be drawn pixel cell 207 electricity, and the pixel cell 207 in different photosensitive unit arrays 203 is interconnected.
Pixel cell 207 comprises MOS transistor 213 and photodiode 215, this MOS transistor 213 is all arranged in the Semiconductor substrate 208 on dielectric layer 206 with photodiode 215, wherein, MOS transistor 213 further comprises: the first doped region 219 in first grid 217, first grid semiconductor substrates on two sides 208 and the second doped region 221, and wherein the first doped region 219 is contrary with the doping type of Semiconductor substrate 208 with the second doped region 221; This photodiode 215 is made up of with Semiconductor substrate 208 the second doped region 221.In one embodiment, Semiconductor substrate 208 is the doping of P type, and the first doped region 219 is N-type heavy doping, and the second doped region 221 is N-type doping.
Can find out, MOS transistor 213 is formed in same semi-conductive substrate 208 with photodiode 215, and is communicated with by sharing the second doped region 221.Like this, in the time having light to irradiate, photodiode 215 is responded to the MOS transistor 213 that electric charge that illumination variation forms can be connected and is shifted, and then offers other signal processing circuit processing by this MOS transistor 213.It should be noted that, in Fig. 2 (b), MOS transistor 213 is only example, in actual applications, each pixel cell 207 can adopt the structure of for example 3 transistors (3-T) or 4 transistors (4-T), wherein also correspondingly includes multiple MOS transistor.
In a preferred embodiment, Semiconductor substrate 208 is also formed with pinning layer (Pinning layer) 223 away from a side of substrate 201, this pinning layer 223 adopts the heavy doping of P type conventionally, it can be advanced to the region away from Semiconductor substrate 208 surfaces by photodiode 215, thereby avoid the blemish of Semiconductor substrate 208 to affect opto-electronic conversion, and then improved the sensitivity of this concave surface cmos image sensor.
Fig. 2 (c) shows according to another embodiment, and the concave surface cmos image sensor shown in Fig. 2 (a) is along the cutaway view of B-B ' direction.It should be noted that, in this manual, the doping type of Semiconductor substrate and wherein zones of different is only example, not as restriction of the present invention, adopts the Semiconductor substrate of other doping types and zones of different wherein still to belong to scope of the present invention.
As shown in Fig. 2 (c), the concave surface cmos sensor shown in the structure of this concave surface cmos image sensor and Fig. 2 (b) is basic identical, and each in the photosensitive unit array 203 of its multiple separation that comprise only comprises a photosensitive unit.Than the concave surface cmos image sensor in Fig. 2 (b), in Fig. 2 (c), concave surface cmos image sensor also includes the 3rd doped region 225, the 3rd doped region 225 comprises along the first surface 227 relative with being fixed on plane in substrate 201, and the doped region distributing perpendicular to the side 229 of described substrate 201.In one embodiment, the doping type of the 3rd doped region 225 is N-type doping, and Semiconductor substrate 208 is the doping of P type.
Particularly, the 3rd doped region 225 of this N-type doping has formed the second photodiode 216 jointly with the Semiconductor substrate 208 of P type doping.Similar with photodiode 215, this second photodiode 216 is also for being converted to the signal of telecommunication by light signal.Owing to only comprising a photosensitive unit in each photosensitive unit array 203, side 229 is distributed in the surrounding of each photosensitive unit, and therefore, in one embodiment, the 3rd doped region 225 is cap-like structure, is distributed on photosensitive unit array 203.This cap-like structure has increased photosensitive region and the electric charge capture ability of each photosensitive unit greatly, thus the sensitivity that has improved concave surface cmos image sensor.
In addition, this concave surface cmos image sensor can also comprise isolated area 231, this isolated area 231 is in the substrate 201 between the photosensitive unit array 203 separating, the medium that includes low-transmittance to be to reduce light transmitted flux, and the medium of this low-transmittance is for example light transmittance lower than 10% material.The isolated area 231 of this low-transmittance can intercept or reduce the light that is irradiated to different photosensitive unit arrays 203 and mutually crosstalk.In one embodiment, adapt with flexible substrate 201, isolated area 231 can comprise the flexible high molecular material of low-transmittance, to make substrate 201 after stressed bending, isolated area 231 can respective curved, thereby does not affect the variation of different photosensitive unit array 203 relative positions.
In actual applications, the metal wire 205 that is communicated with multiple photosensitive unit arrays 203 is drawn by lead block (not shown) further, in the time of encapsulation concave surface cmos image sensor, this lead block can be drawn by the wire in image sensor package further, thereby be formed for drawing the pin of this concave surface cmos image sensor, to load input/output signal and/or to drive signal.In one embodiment, in the substrate 201 of concave surface cmos image sensor of the present invention, also include the first area of multiple separation of conduction, and nonconducting second area, wherein, the first area of described multiple separation is connected with the lead block in concave surface cmos image sensor respectively, corresponding lead block is drawn, and then each photosensitive unit in multiple photosensitive unit arrays 203 is drawn by electricity, described nonconducting second area is for isolating the first area of multiple separation of described conduction.In another embodiment, the substrate 201 of concave surface cmos image sensor of the present invention comprises anisotropic conductive material, and described anisotropic conductive material is in the direction conduction perpendicular to described substrate 201.By using anisotropic conductive material, each lead block of concave surface cmos image sensor is drawn by electricity respectively, also short circuit mutually not of different lead block.Those skilled in the art can understand; for " anisotropic conductive material is in the direction conduction perpendicular to substrate "; might not be vertically wherein proper 90 degree; due to reasons such as foozles; conducting direction may depart from and is approximately no more than 10 degree, for this be not that the situations of strict 90 degree also fall into protection scope of the present invention.
Can be applied to and include but not limited to that mobile phone camera, digital camera camera, Digital Video make a video recording in first-class camera according to the concave surface cmos image sensor of each embodiment of the present invention.
With reference to figure 3, show the cutaway view of concave surface cmos image sensing element according to an embodiment of the invention.
This concave surface cmos image sensing element comprises: substrate 301, and described substrate 301 comprises flexible material; Be positioned at the photosensitive unit array 303 of the multiple separation in described substrate 301, each in the photosensitive unit array 303 of described multiple separation comprises at least one photosensitive unit; And support 302, described support 302 comprises bending supporting surface, and wherein, described substrate 301 is flexible, and be fixed on the supporting surface of described support 302, the curvature of described supporting surface makes photosensitive unit array 303 forming surfaces of described multiple separation to the concave surface of camera lens.
In Fig. 3, also show camera lens 304, and schematically show light and be radiated at the light path of concave surface cmos image sensing element after camera lens 304 refraction.Camera lens 304 has formed camera jointly with this concave surface cmos image sensing element.It should be understood by one skilled in the art that, different according to camera lens 304 and photosensitive unit array 303 and camera lens spacing, the curvature of described support 302 is not identical yet, preferably, the curvature of described support 302 makes the angle between light that the normal of the photosensitive unit in each in the photosensitive unit array 303 of multiple separation can and reflect through camera lens 304 be less than preset range, for example, be less than 5 degree.
In one embodiment, in the photosensitive unit array 303 of described multiple separation, the acute angle that exists the normal of two photosensitive unit arrays 303 to form is greater than 10 degree.
In one embodiment, in the photosensitive unit array 303 of described multiple separation, the row or column of each in photosensitive unit array 303 over half comprises no more than 16 photosensitive units.
In one embodiment, described cmos image sensing element also comprises the medium of the low-transmittance between the photosensitive unit array 303 of described multiple separation.
In one embodiment, described concave surface cmos image sensing element is back-illuminated type cmos image sensing element.
In one embodiment, each in the photosensitive unit array 303 of described multiple separation only includes a photosensitive unit, and comprise along being fixed on the plane in described substrate 301, the another side relative with described plane, and the doped region distributing perpendicular to the side of described substrate 301, described doped region forms by side direction Implantation.
In one embodiment, the first area of multiple separation that described substrate 301 comprises conduction and nonconducting second area, the first area of wherein said multiple separation makes at least part of lead block corresponding with described photosensitive unit array 303 of concave surface cmos image sensing element be communicated with pin corresponding in described support 302.
In one embodiment, described substrate 301 comprises anisotropic conductive material, described anisotropic conductive material is in the direction conduction perpendicular to described substrate 301, so that at least part of lead block in described cmos image sensing element is communicated with pin corresponding in described support 302.
In one embodiment, described multiple photosensitive unit arrays 303 are communicated with by metal wire, and wherein the length of described metal wire 303 over half is greater than 1.05 times of described multiple photosensitive unit array pitch.
Fig. 4 shows the flow process of manufacturing according to an embodiment of the invention back-illuminated type concave surface cmos image sensor, comprising:
Execution step S402, on the first surface of the first substrate, prepare multiple pixel unit array, be arranged in the dielectric layer in described multiple pixel unit array and be distributed in described dielectric layer for being communicated with the metal wire of described multiple pixel unit array; Execution step S404 deposits thin film on described dielectric layer, and described film comprises flexible material; Execution step S406, from the first substrate described in second attenuate of described the first substrate to predetermined thickness; Execution step S408, from second filter coating array and microlens array that formation is corresponding with described multiple pixel unit array of described the first substrate, each pixel unit array forms photosensitive unit array jointly with corresponding filter coating array and microlens array; Execution step S410, from the first substrate described in second etching of described the first substrate, thereby makes not exist between described multiple pixel unit array described the first substrate, and makes the residual thickness of described dielectric layer in predetermined thickness range; Wherein, described film is flexible, thereby allows the pixel unit array forming surface of described multiple separation to the concave surface of camera lens, and wherein, the order of described step S408 and described step S410 can be exchanged.
Fig. 5 (a) shows the cutaway view of manufacturing according to an embodiment of the invention back-illuminated type concave surface cmos image sensor flow process to Fig. 5 (e).Next, in conjunction with Fig. 4 and Fig. 5 (a), to 5 (e), an embodiment of the method to manufacture back-illuminated type concave surface cmos image sensor of the present invention is described further.
As shown in Fig. 5 (a), the first substrate 501 is provided, this first substrate 501 is for example the Semiconductor substrate such as silicon, germanium or silicon-on-insulator.On the first surface 502 of this first substrate 501, prepare multiple pixel unit array 503, wherein, in each pixel unit array 503, one or more pixel cells be can comprise, photodiode and one or above MOS transistor in each pixel cell, included.
Then, in the plurality of pixel unit array 503, form dielectric layer 504, wherein in this dielectric layer 504, further include and be positioned at one deck wherein or above metal wire 505.Dielectric layer 504 is covered on the first surface 502 of the first substrate 501 equably, thereby multiple pixel unit array 503 are covered, and the metal wire 505 in dielectric layer 504 is communicated with described multiple pixel unit array 503.Particularly, can adopt chemical vapor deposition method to form this dielectric layer 504, adopt chemical vapour deposition (CVD) or physical gas-phase deposition to form this metal wire 505.
As shown in Fig. 5 (b), deposit film 506 on dielectric layer 504, described film 506 comprises flexible material, the flexible high-molecular organic materials such as such as polyimides, therefore, described film 506 is flexible.
In one embodiment, described film 506 comprises anisotropic conductive material, and this anisotropic conductive material, perpendicular to the first substrate 501, is specially the first surface 502 of the first substrate 501, direction conduction.Those skilled in the art can understand; " anisotropic conductive material is in the direction conduction perpendicular to the first substrate "; be not vertically wherein proper 90 degree; due to reasons such as foozles; conducting direction can depart from and is approximately no more than 10 degree, for this be not that the situations of strict 90 degree also fall into protection scope of the present invention.
In another embodiment, described film 506 comprises first area and nonconducting second area of multiple separation of conduction, the first area of multiple separation of described conduction respectively with by corresponding at least part of lead block (not shown) of pixel unit array 503, lead block can be drawn by film 506 further, thereby at least part of lead block can be communicated with pin corresponding in image sensor package.Particularly, can adopt silk-screen printing technique or photoetching process to form respectively first area and second area.
As shown in Fig. 5 (c), from the first substrate 501 described in second 507 attenuate of the first substrate 501 to predetermined thickness.By described attenuate, pixel unit array 503 is exposed, expose by the photodiode of pixel unit array 503.In one embodiment, this predetermined thickness is less than or equal to the degree of depth of pixel unit array 503 in the first substrate 501.Particularly, can adopt CMP (Chemical Mechanical Polishing) process to carry out the first substrate 501 described in attenuate.
As shown in Fig. 5 (d), second 507 from described the first substrate 501 forms filter coating array 508 and the microlens array 509 corresponding with described multiple pixel unit array 503, and each pixel unit array 503 forms photosensitive unit array 510 jointly with corresponding filter coating array 508 and microlens array 509.For black and white cmos image sensor, in one embodiment, can on second of the first substrate 501 507, form passivation layer and the microlens array corresponding with described multiple pixel unit array 503.
As shown in Fig. 5 (e), from the first substrate described in second etching of described the first substrate, thereby make not have the first substrate between described multiple pixel unit array 503, and make the residual thickness of described dielectric layer 504 in preset range, for example be less than 1 micron, in the time that the residual thickness of dielectric layer is zero, corresponding to dielectric layer logical situation at 504 quarters.
In one embodiment, described etching comprises selective etch, the selective etching ratio of described selective etch between described the first substrate and described dielectric layer 504 and described metal wire 505 is greater than predetermined value, for example be greater than 20: 1, the degree that the degree that metal wire 505 is etched is etched far fewer than dielectric layer 504.In one embodiment, the residual thickness of described dielectric layer 504 is less than the distance of the first surface of metal wire 505 and the first substrate, thereby metal wire 505 is all exposed.In a preferred embodiment, the dielectric layer 504 between pixel unit array 503 is Removed All, so that film 506 is exposed.Should be appreciated that, described etching is without being removed dielectric layer 504 completely, and on metal wire 505, remaining part dielectric layer 504 can't affect the work of this concave surface cmos image sensor, and therefore, this situation still belongs to scope of the present invention.Particularly, can adopt the first substrate and dielectric layer 504 described in anisotropic dry etch process etching.Therefore, the dielectric layer 504 of each pixel unit array 503 tops can not be removed.
In one embodiment, the length of the metal wire 505 between multiple pixel unit array 503 is greater than the width of described etching, for example, be greater than 1.05 times of described etching width.Particularly, metal wire 505 can be curve or arc line shaped, thereby makes its length be greater than etching width, i.e. spacing between the pixel unit array 503 of correspondence position.
After complete the first substrate of etching, the semiconductor substrate region (i.e. the remaining area of the first substrate) that forms photodiode, MOS transistor etc. in pixel unit array 503 is separated mutually; But different pixel unit array 503, for example,, with pixel unit array 503 adjacent in a line and/or same row, still can be communicated with by the metal wire 505 not being etched therebetween in the pixel unit array 503 of array arrangement.
Because the dielectric layer 504 between multiple pixel unit array 503 is removed substantially, and film 506 is flexible, and therefore, the pixel unit array 503 of described multiple separation can be allowed to bending under external force, and forming surface is to the concave surface of camera lens.
Fig. 6 (a) shows the cutaway view of manufacturing in accordance with another embodiment of the present invention back-illuminated type concave surface cmos image sensor flow process to Fig. 6 (h).Each in the photosensitive unit array of the multiple separation that comprise in this concave surface cmos image sensor only comprises a photosensitive unit.
It should be noted that, in this manual, the doping type of Semiconductor substrate and wherein zones of different is only example, not as restriction of the present invention, adopts the Semiconductor substrate of other doping types and zones of different wherein still to belong to scope of the present invention.
As shown in Fig. 6 (a), the first substrate 601 is provided, this first substrate 601 is for example the Semiconductor substrate such as silicon, germanium or silicon-on-insulator.On the first surface 602 of this first substrate 601, prepare multiple pixel unit array 603, wherein, in each pixel unit array 603, only comprise a pixel cell, wherein further include photodiode and one or above MOS transistor.
Then, in the plurality of pixel unit array 603, form dielectric layer 604, wherein in this dielectric layer 604, further include and be positioned at one deck wherein or above metal wire 605.Dielectric layer 604 is covered on the first surface 602 of the first substrate 601 equably, thereby multiple pixel unit array 603 are covered, and the metal wire 605 in dielectric layer 604 is communicated with described multiple pixel unit array 603.
As shown in Fig. 6 (b), from first surface 602 etching dielectric layer 604 to first desired depths of the first substrate 601, thereby between described multiple pixel unit array 603, form multiple the first grooves 619.In a preferred embodiment, described the first groove 619 exposes the metal wire 605 of top layer in the dielectric layer 604 between pixel unit array 603.
As shown in Fig. 6 (c), deposit film 606 on dielectric layer 604, described film 606 comprises flexible material, the flexible high-molecular organic materials such as such as polyimides, therefore, described film 606 is flexible.In one embodiment, the thickness of this film 606 is greater than 5 microns.
In one embodiment, described film 606 comprises anisotropic conductive material, and this anisotropic conductive material is conducting electricity perpendicular to the first substrate 601 directions.
In another embodiment, described film 606 comprises first area and nonconducting second area of multiple separation of conduction, the first area of multiple separation of described conduction is corresponding with the lead block (not shown) that pixel unit array 603 electricity are drawn respectively, and this lead block can be drawn by film 606 further.Particularly, can adopt silk-screen printing technique or photoetching process to form respectively first area and second area.
As shown in Fig. 6 (d), from the first substrate 601 described in second 607 attenuate of the first substrate 601 to predetermined thickness.By described attenuate, pixel unit array 603 is exposed, expose by the photodiode of pixel unit array 603.In one embodiment, this predetermined thickness is less than or equal to the degree of depth of pixel unit array 603 in the first substrate 601.Particularly, can adopt CMP (Chemical Mechanical Polishing) process to carry out the first substrate 601 described in attenuate.
As shown in Fig. 6 (e), from the first substrate to the second desired depth described in second etching of the first substrate, thereby between multiple photosensitive unit arrays 603, form multiple the second grooves 620.Described the first desired depth and the second desired depth make not have the first substrate between multiple photosensitive unit arrays 603, and make the residual thickness of the dielectric layer between photosensitive unit array 603 in predetermined thickness range, for example be less than 1 micron, in the time that the residual thickness of dielectric layer is zero, corresponding dielectric layer is carved logical situation.
In one embodiment, described etching comprises selective etch, the selective etching ratio of described selective etch between described the first substrate and described dielectric layer and described metal wire 605 is greater than predetermined value, and for example 20: 1, the degree that the degree that metal wire 605 is etched is etched far fewer than dielectric layer.
After complete the first substrate of etching, the semiconductor substrate region (i.e. the remaining area of the first substrate) that forms photodiode, MOS transistor etc. in pixel unit array 603 is separated mutually; But different pixel unit array 603, for example,, with pixel unit array 603 adjacent in a line and/or same row, still can be communicated with by the metal wire 605 not being etched therebetween in the pixel unit array 603 of array arrangement.
As shown in Fig. 6 (f), after forming the pixel unit array 603 of multiple separation, also comprise: carry out side direction Implantation from second 607 pairs of the first substrate of described the first substrate, thereby form N-type doped region on the side 621 of the described first surface perpendicular to described the first substrate of described second 607 and each described pixel unit array 603; And carry out non-perpendicular illumination from described second 607 pairs described the first substrates of described the first substrate, the angle of described non-perpendicular illumination makes light only be irradiated to described second 607 and described side 621, thereby activates the ion that is injected into described second 607 and described side 621.
Like this, this N-type doped region and the first substrate 601 of being connected with this N-type doped region have formed the second photodiode jointly.In one embodiment, the second photodiode is cap-like structure and is distributed in pixel unit array 603, this cap-like structure has increased photosensitive region and the electric charge capture ability of each photosensitive unit greatly, thus the sensitivity that has improved concave surface cmos image sensor.
As shown in Fig. 6 (g), second 607 from described the first substrate forms filter coating array 608 and the microlens array 609 corresponding with described multiple pixel unit array 603, and each pixel unit array 603 forms photosensitive unit array 610 jointly with corresponding filter coating array 608 and microlens array 609.
Because the dielectric layer between multiple photosensitive unit arrays 610 is removed substantially, and film 606 is flexible, and therefore, the photosensitive unit array 610 of described multiple separation can be allowed to bending under external force, and forming surface is to the concave surface of camera lens.
As shown in Fig. 6 (h), after forming the photosensitive unit array 610 of multiple separation, the medium that can also fill low-transmittance between the photosensitive unit array 610 of described multiple separation to be to reduce light transmitted flux, and the medium of this low-transmittance is for example light transmittance lower than 10% material.In one embodiment, the thickness of the medium of this low-transmittance at least exceedes the thickness of pixel unit array, is at least filled into the position of filter coating array 608.The medium of this low-transmittance can intercept the light that is irradiated to different photosensitive unit arrays 610 and mutually crosstalk, thereby improves the IMAQ quality of concave surface cmos image sensor.
Although illustrate in detail and described the present invention in accompanying drawing and aforesaid description, should think that this is illustrated and describes is illustrative and exemplary, instead of restrictive; The invention is not restricted to above-mentioned execution mode.
The those skilled in the art of those the art can, by research specification, disclosed content and accompanying drawing and appending claims, understand and implement other changes of the execution mode to disclosing.In the claims, word " comprises " element and the step of not getting rid of other, and wording " one " is not got rid of plural number.In the practical application of invention, a part may execute claims the function of middle quoted multiple technical characterictics.Any Reference numeral in claim should not be construed as the restriction to scope.
Claims (27)
1. a concave surface cmos image sensor, comprising:
Substrate, described substrate comprises flexible material; And
Be positioned at the photosensitive unit array of described suprabasil multiple separation, each in the photosensitive unit array of described multiple separation comprises at least one photosensitive unit;
Wherein, described substrate is flexible, thereby allows the photosensitive unit array of described multiple separation to form the concave surface towards camera lens; Described substrate also comprise dielectric layer and be arranged in described dielectric layer for being communicated with the metal wire of described multiple photosensitive unit arrays; In the photosensitive unit array of described multiple separation, the acute angle that exists the normal of two photosensitive unit arrays to form is greater than 10 degree; Described substrate is included in the anisotropic electric conducting material perpendicular to the direction conduction of described substrate.
2. concave surface cmos image sensor according to claim 1, is characterized in that, in the photosensitive unit array of described multiple separation, the row or column of each in photosensitive unit array over half comprises no more than 16 photosensitive units.
3. concave surface cmos image sensor according to claim 1, is characterized in that, described concave surface cmos image sensor also comprises the medium of the low-transmittance between the photosensitive unit array of described multiple separation.
4. concave surface cmos image sensor according to claim 1, is characterized in that, wherein the length of described metal wire over half is greater than 1.05 times of described multiple photosensitive unit array pitch.
5. concave surface cmos image sensor according to claim 1, is characterized in that, described photosensitive unit comprises:
Pixel cell;
Be positioned at the filter coating on described pixel cell; And
Be positioned at the lenticule on described filter coating.
6. concave surface cmos image sensor according to claim 1, is characterized in that, described concave surface cmos image sensor is back-illuminated cmos image sensors.
7. concave surface cmos image sensor according to claim 6, it is characterized in that, each in the photosensitive unit array of described multiple separation only includes a photosensitive unit, and comprise along being fixed on described suprabasil plane, the another side relative with described plane, and the doped region distributing perpendicular to the side of described substrate, described doped region forms by side direction Implantation.
8. concave surface cmos image sensor according to claim 6, it is characterized in that, the first area of multiple separation that described substrate comprises conduction and nonconducting second area, the first area of wherein said multiple separation makes at least part of lead block in imageing sensor be communicated with pin corresponding in image sensor package.
9. concave surface cmos image sensor according to claim 6, it is characterized in that, described substrate comprises anisotropic conductive material, described anisotropic conductive material is in the direction conduction perpendicular to described substrate, so that at least part of lead block in imageing sensor is communicated with pin corresponding in image sensor package.
10. a camera, comprises the concave surface cmos image sensor described in any one in claim 1-9.
11. cameras according to claim 10, is characterized in that, described camera comprises mobile phone camera.
12. 1 kinds of concave surface cmos image sensing elements, comprising:
Substrate, described substrate comprises flexible material;
Be positioned at the photosensitive unit array of described suprabasil multiple separation, each in the photosensitive unit array of described multiple separation comprises at least one photosensitive unit; And
Support, described support comprises bending supporting surface;
Wherein, described substrate is flexible, and is fixed on the supporting surface of described support, and the curvature of described supporting surface makes the photosensitive unit array of described multiple separation form the concave surface towards camera lens; Described substrate also comprise dielectric layer and be arranged in described dielectric layer for being communicated with the metal wire of described multiple photosensitive unit arrays; In the photosensitive unit array of described multiple separation, the acute angle that exists the normal of two photosensitive unit arrays to form is greater than 10 degree; Described substrate is included in the anisotropic electric conducting material perpendicular to the direction conduction of described substrate.
13. concave surface cmos image sensing elements according to claim 12, is characterized in that, in the photosensitive unit array of described multiple separation, the row or column of each in photosensitive unit array over half comprises no more than 16 photosensitive units.
14. concave surface cmos image sensing elements according to claim 12, is characterized in that, described concave surface cmos image sensing element also comprises the medium of the low-transmittance between the photosensitive unit array of described multiple separation.
15. concave surface cmos image sensing elements according to claim 12, is characterized in that, described concave surface cmos image sensing element is back-illuminated type cmos image sensing element.
16. concave surface cmos image sensing elements according to claim 15, it is characterized in that, each in the photosensitive unit array of described multiple separation only includes a photosensitive unit, and comprise along being fixed on described suprabasil plane, the another side relative with described plane, and the doped region distributing perpendicular to the side of described substrate, described doped region forms by side direction Implantation.
17. concave surface cmos image sensing elements according to claim 15, it is characterized in that, the first area of multiple separation that described substrate comprises conduction and nonconducting second area, the first area of wherein said multiple separation makes at least part of lead block in described concave surface cmos image sensing element be communicated with pin corresponding in described support.
18. concave surface cmos image sensing elements according to claim 15, it is characterized in that, described substrate comprises anisotropic conductive material, described anisotropic conductive material is in the direction conduction perpendicular to described substrate, so that at least part of lead block in described concave surface cmos image sensing element is communicated with pin corresponding in described support.
19. concave surface cmos image sensing elements according to claim 12, is characterized in that, wherein the length of described metal wire over half is greater than 1.05 times of described multiple photosensitive unit array pitch.
20. 1 kinds of cameras, comprise the concave surface cmos image sensing element described in any one in claim 12-19.
Manufacture the method for back-illuminated type concave surface cmos image sensor, comprising for 21. 1 kinds:
A. on the first surface of the first substrate, prepare multiple pixel unit array, be arranged in the dielectric layer in described multiple pixel unit array and be distributed in described dielectric layer for being communicated with the metal wire of described multiple pixel unit array;
B. on described dielectric layer, deposit thin film, described film comprises flexible material;
C. from the first substrate described in second attenuate of described the first substrate to predetermined thickness;
D. from second filter coating array and microlens array that formation is corresponding with described multiple pixel unit array of described the first substrate, each pixel unit array forms photosensitive unit array jointly with corresponding filter coating array and microlens array; And
E. from the first substrate described in second etching of described the first substrate, thereby make not exist between described multiple pixel unit array described the first substrate, and make the residual thickness of described dielectric layer in predetermined thickness range,
Wherein, described film is flexible, thereby allows the pixel unit array forming surface of described multiple separation to the concave surface of camera lens, and wherein, the order of described steps d and described step e can be exchanged.
22. methods according to claim 21, is characterized in that, further comprising the steps of between described step a and described step b:
A1. from dielectric layer to the first desired depth described in the first surface etching of described the first substrate, thereby between described multiple pixel unit array, form multiple the first grooves;
Wherein, described step e comprises:
From the first substrate to the second desired depth described in second etching of described the first substrate, thereby form multiple the second grooves between described multiple photosensitive unit arrays, described the first and second desired depths make not have described the first substrate between described multiple photosensitive unit array, and make the residual thickness of described dielectric layer in predetermined thickness range.
23. according to the method described in claim 21 or 22, it is characterized in that, described etching comprises selective etch, and the selective etching ratio of described selective etch between described the first substrate and described dielectric layer and described metal wire is greater than predetermined value.
24. methods according to claim 21, is characterized in that, between multiple pixel unit array, the length of metal wire over half is greater than 1.05 times of width of described etching.
25. methods according to claim 21, is characterized in that, each in described multiple pixel unit array only includes a pixel cell, in the time that described step e is before described steps d, further comprising the steps of between described step e and described steps d:
E1. carry out side direction Implantation from described second of described the first substrate in the face of described the first substrate, thereby form doped region on the side of the described first surface perpendicular to described the first substrate of described second and each described pixel unit array; And
E2. carry out non-perpendicular illumination from described second of described the first substrate in the face of described the first substrate, the angle of described non-perpendicular illumination makes light only be irradiated to described second and described side, thereby activates the ion that is injected into described second and described side.
26. methods according to claim 21, it is characterized in that, the described film of described step b comprises first area and nonconducting second area of multiple separation of conduction, and the first area of multiple separation of described conduction makes at least part of lead block in described concave surface COMS imageing sensor be communicated with pin corresponding in image sensor package.
27. methods according to claim 26, is characterized in that, described step b comprises: adopt silk-screen printing technique or photoetching process to form first area and the described second area of described multiple separation of described film.
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| KR102328140B1 (en) * | 2014-12-15 | 2021-11-18 | 에스케이하이닉스 주식회사 | Curved image sensor, method for fabricating the same and electronic device having the same |
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