CN102201422A - Concave complementary metal-oxide-semiconductor (CMOS) image sensor and manufacturing method thereof - Google Patents
Concave complementary metal-oxide-semiconductor (CMOS) image sensor and manufacturing method thereof Download PDFInfo
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Abstract
The invention relates to a concave complementary metal-oxide-semiconductor (CMOS) image sensor and a manufacturing method thereof. In one embodiment, a concave CMOS image sensor is provided, and the concave CMOS image sensor comprises a substrate and a plurality of separate light-sensitive unit arrays, wherein the substrate comprises a bendable material; the plurality of separate light-sensitive unit arrays are positioned on the substrate; and each of the plurality of separate light-sensitive unit arrays comprises at least one light-sensitive unit, and the substrate is bendable, so that the plurality of separate light-sensitive unit arrays are allowed to form a concave face facing a lens. The concave CMOS image sensor enables lights to be vertically irradiated on the light-sensitive unit arrays generally, so that the light crosstalk between adjacent light-sensitive units is at least partially reduced.
Description
Technical field
The present invention relates to technical field of semiconductors, more specifically, the present invention relates to a kind of concave surface cmos image sensor and manufacture method thereof.
Background technology
Along with development of semiconductor, imageing sensor has been widely used in the field that various needs carry out digital imagery, for example in the electronic product such as digital camera, Digital Video.According to the difference of opto-electronic conversion mode, imageing sensor can be divided into two classes usually: charge coupled device (Charge Coupled Device, CCD) imageing sensor and complementary metal oxide semiconductors (CMOS) (CMOS) imageing sensor.Wherein, cmos image sensor has advantages such as volume is little, low in energy consumption, production cost is low, therefore, cmos image sensor for example is easy to be integrated in the mancarried electronic aids such as mobile phone, notebook computer, panel computer, uses as the shooting module that the digital imagery function is provided.
The shooting module is made of imageing sensor and camera lens usually.Along with portable equipment is lightening day by day, in order to reduce volume or thickness, the distance in the shooting module between camera lens and imageing sensor also is designed to be more and more nearer.Yet, camera lens and imageing sensor spacing cross closely can cause incident ray via can not vertical irradiation after the camera lens refraction on imageing sensor, promptly the normal of photosensitive unit is certain included angle in light after the refraction and the imageing sensor, and this phenomenon is particularly evident at the imageing sensor edge.
The structure that imageing sensor adopts array to arrange usually, each unit of image sensor array is called as photosensitive unit, and it is made up of filter coating on pixel cell, the pixel cell and lenticule.For the imageing sensor that array is arranged, after the lenticule and filter coating of the light of non-perpendicular irradiation photosensitive unit in passing the photosensitive unit array, can partly shine on the pixel cell of adjacent photosensitive unit, thereby cause optical crosstalk.For color cmos image sensors, the optical crosstalk between adjacent photosensitive unit can produce the colour mixture problem, and then influences image quality.
In the prior art, a kind of method that can be used for reducing optical crosstalk is to use the camera lens of many eyeglasses combinations to compensate so that light substantially vertical irradiation to each photosensitive unit.Yet, the lens construction of very difficult integrated complexity on the less shooting module of volume, and cost of manufacture is also higher.
Summary of the invention
As seen, need provide a kind of concave surface cmos image sensor, make through the light of camera lens refraction substantially vertical irradiation on the photosensitive unit array of imageing sensor, to reduce the optical crosstalk between the adjacent photosensitive unit.
In order to address the above problem, in embodiment, provide a kind of concave surface cmos image sensor according to one aspect of the invention, comprising: substrate, described substrate comprises flexible material; And the photosensitive unit array that is positioned at described suprabasil a plurality of separation, in the photosensitive unit array of described a plurality of separation each comprises at least one photosensitive unit, wherein, described substrate is flexible, thereby allows the concave surface of the photosensitive unit array formation of described a plurality of separation towards camera lens.
In embodiment according to a further aspect of the invention, a kind of concave surface cmos image sensing element also is provided, comprising: substrate, described substrate comprises flexible material; Be positioned at the photosensitive unit array of described suprabasil a plurality of separation, each in the photosensitive unit array of described a plurality of separation comprises at least one photosensitive unit; And support, described support comprises crooked supporting surface, and wherein, described substrate is flexible, and is fixed on the supporting surface of described support, and the curvature of described supporting surface makes the photosensitive unit array of described a plurality of separation form the concave surface towards camera lens.
In embodiment according to a further aspect of the invention, a kind of camera also is provided, comprise a kind of concave surface cmos image sensing element, described concave surface cmos image sensing element comprises: substrate, described substrate comprises flexible material; Be positioned at the photosensitive unit array of described suprabasil a plurality of separation, each in the photosensitive unit array of described a plurality of separation comprises at least one photosensitive unit; And support, described support comprises crooked supporting surface, and wherein, described substrate is flexible, and is fixed on the supporting surface of described support, and the curvature of described supporting surface makes the photosensitive unit array of described a plurality of separation form the concave surface towards camera lens.
In embodiment according to another aspect of the invention, a kind of method of making back-illuminated type concave surface cmos image sensor also is provided, comprising:
A. at the metal wire that is used to be communicated with described a plurality of pixel unit array for preparing a plurality of pixel unit array on first of first substrate, is arranged in the dielectric layer on described a plurality of pixel unit array and is distributed in described dielectric layer;
B. deposit thin film on described dielectric layer, described film comprises flexible material;
C. from described first substrate of second attenuate of described first substrate to preset thickness;
D. from second formation of described first substrate filter coating array and the microlens array corresponding with described a plurality of pixel unit array, each pixel unit array constitutes the photosensitive unit array jointly with corresponding filter coating array and microlens array; And
E. from described first substrate of second etching of described first substrate, thereby make and do not have described first substrate between described a plurality of pixel unit array, and make the residual thickness of described dielectric layer in predetermined thickness range,
Wherein, described film is flexible, thereby allows the concave surface of the pixel unit array formation of described a plurality of separation towards camera lens, and wherein, the order of described steps d and described step e can be exchanged.
Compared with prior art, concave surface cmos image sensor of the present invention comprises the photosensitive unit array of a plurality of separation, the photosensitive unit array of these separation can be arranged with the direction that is suitable for the camera lens refracted ray, thereby make light substantially vertical irradiation and then reduce optical crosstalk between adjacent photosensitive unit at least in part to the photosensitive unit array.In addition, adopt the shooting module of concave surface cmos image sensor of the present invention, can simplify the design of camera lens, thereby reduce cost.
Above characteristic of the present invention and other characteristics are partly set forth embodiment hereinafter clearly.
Description of drawings
Read following detailed description by the reference accompanying drawing, can more easily understand features, objects and advantages of the invention non-limiting example.Wherein, same or analogous Reference numeral is represented same or analogous device.
Fig. 1 (a) shows the vertical view of concave surface cmos image sensor according to an embodiment of the invention;
Fig. 1 (b) shows the cutaway view of the concave surface cmos image sensor shown in Fig. 1 (a) along A-A ' direction;
Fig. 2 (a) shows the vertical view of concave surface cmos image sensor according to an embodiment of the invention;
Fig. 2 (b) shows according to one embodiment of the invention, and the concave surface cmos image sensor shown in Fig. 2 (a) is along the cutaway view of B-B ' direction;
Fig. 2 (c) shows according to a further embodiment of the invention, and the concave surface cmos image sensor shown in Fig. 2 (a) is along the cutaway view of B-B ' direction;
Fig. 3 shows the cutaway view of concave surface cmos image sensing element according to an embodiment of the invention;
Fig. 4 shows the flow process of making back-illuminated type concave surface cmos image sensor according to an embodiment of the invention;
Fig. 5 (a) shows the cutaway view of making back-illuminated type concave surface cmos image sensor flow process according to an embodiment of the invention to Fig. 5 (e);
Fig. 6 (a) shows the cutaway view of making back-illuminated type concave surface cmos image sensor flow process in accordance with another embodiment of the present invention to Fig. 6 (h).
Embodiment
Go through enforcement and the use of embodiment below.Yet, should be appreciated that the specific embodiment of being discussed only exemplarily illustrates enforcement and uses ad hoc fashion of the present invention, but not limit the scope of the invention.
With reference to figure 1 (a), show the vertical view of concave surface cmos image sensor according to an embodiment of the invention.The photosensitive unit array 103 that this concave surface cmos image sensor comprises substrate 101 and is positioned at a plurality of separation in the described substrate 101, wherein, each in the photosensitive unit array 103 of described a plurality of separation comprises at least one photosensitive unit.
Particularly, substrate 101 comprises flexible material, flexible high-molecular organic material such as polyimides for example, and therefore, substrate 101 is flexible, thus the concave surface that allows the photosensitive unit array 103 of described a plurality of separation to form towards camera lens.Need to prove, here alleged is flexible, be meant under certain external force effect, suitable deformation takes place in substrate 101 easily, relative position with the photosensitive unit array 103 that drives a plurality of separation in the substrate 101 changes, substrate 101 and each photosensitive unit array 103 be structural be connected then constant substantially.
One of ordinary skill in the art will appreciate that, the quantity of photosensitive unit array 103 only is example among Fig. 1 (a), in actual applications, according to the difference of concave surface cmos image sensor resolution, the quantity of photosensitive unit and arrangement mode also can be different in the quantity of photosensitive unit array 103, each photosensitive unit array 103 in the concave surface cmos image sensor.In the embodiment shown in Fig. 1 (a), in each photosensitive unit array 103 quantity of photosensitive unit and inner arrange identical, and the photosensitive unit array 103 of described a plurality of separation regularly array arrangement in substrate 103.In this case, the capable resolution of this concave surface cmos image sensor equals the summation of the capable resolution of a row photosensitive unit array 103, and the column split rate of this concave surface cmos image sensor equals the summation of the column split rate of delegation's photosensitive unit array 103.In another embodiment, the quantity of the photosensitive unit that a plurality of photosensitive unit arrays 103 are comprised in the substrate 101 can be incomplete same, for example the area of the photosensitive unit array 103 of substrate 101 zone lines (i.e. the zone of close camera lens primary optical axis) is bigger, the photosensitive unit that comprises a greater number, and the area of the photosensitive unit array 103 of substrate 101 fringe regions is less, and the photosensitive unit that comprises is also less.Because therefore the 103 common inflexibility of photosensitive unit array, after substrate 101 stressed bendings, can be avoided not being complementary with crooked substrate 101 than the photosensitive unit array 103 of small size, and then the problem of image error occur.In a preferred embodiment, in the photosensitive unit array 103 of a plurality of separation of concave surface cmos image sensor, the row or column of each in the photosensitive unit array 103 over half comprises no more than 16 photosensitive units.
Need to prove that alleged separation is meant that the semiconductor substrate region that forms photodiode, MOS transistor etc. in each photosensitive unit array 103 separates mutually here; But different photosensitive unit arrays 103, for example in the photosensitive unit array 103 of array arrangement with photosensitive unit array 103 adjacent in delegation and/or the same row, still can be communicated with by the metal wire 105 by therebetween.Wherein, according to the difference of the photosensitive unit quantity that comprises in the photosensitive unit array 103, and the difference of photosensitive unit arrangement mode, the quantity of the metal wire between the adjacent photosensitive unit array 103 is also different.In one embodiment, part metals line 105 in this concave surface cmos image sensor, metal wire 105 for example over half, length can be greater than the spacing of photosensitive unit array 103, so that substrate 101 is after stressed bending, metal wire 105 still can extend certain length and not rupture, thereby guarantees interconnecting of 103 of photosensitive unit arrays.The length of alleged in this article metal wire 105 is meant the length of the metal wire 105 between different photosensitive unit arrays 103, and does not comprise that metal wire 105 is positioned at the zone of photosensitive unit array 103.In a preferred embodiment, the length of metal wire 105 is greater than 1.05 times of described a plurality of photosensitive unit array 103 spacings.Alternatively, metal wire 105 for example is copper cash, aluminum steel or other interconnect materials.
With reference to figure 1 (b), show according to the cutaway view of the concave surface cmos image sensor shown in Fig. 1 (a) along A-A ' direction.Wherein, each row of each photosensitive unit array 103 comprises 4 photosensitive units in this concave surface cmos image sensor.But the quantity that should be understood that photosensitive unit only is example, and in actual applications, the quantity of photosensitive unit can be according to the needs of image sensor resolutions and different in each photosensitive unit array 103.
Shown in Fig. 1 (b), after applying certain external force, substrate 101 can bend, thereby makes substrate 101 be concave structure, and makes the photosurface of photosensitive unit array 103 of a plurality of separation in the substrate 101 converge to camera lens (not shown) direction.
According to Fig. 1 (b) as can be seen, for the photosensitive unit array 103 of diverse location in substrate 101, after substrate 101 stressed bendings, its offset amplitude may be variant.Especially, far away more apart from primary optical axis for the primary optical axis of camera lens, the offset amplitude of photosensitive unit array 103 is big more, and the normal of photosensitive unit array 103 photosurfaces and the angle of primary optical axis are also big more.In one embodiment, in the photosensitive unit array 103 of a plurality of separation, exist acute angle that the normal (being the normal of photosurface) of two photosensitive unit arrays 103 forms greater than 10 degree, thereby make the concave surface that the photosensitive unit array 103 of described a plurality of separation forms towards camera lens.
In actual applications, the offset of photosensitive unit array 103 can compensate the refracted ray of camera lens and the deviation between the camera lens primary optical axis at least in part in the substrate 101, thus make light substantially vertical incidence shine on the photosurface of each photosensitive unit array 103.Like this, shine light on the photosensitive unit and can not pass photosensitive unit and shine on the adjacent photosensitive unit, this has just effectively reduced the optical crosstalk between adjacent photosensitive unit, thereby improves the quality of IMAQ.
In one embodiment, this concave surface cmos image sensor also comprises the medium of the low-transmittance between the photosensitive unit array 103 of a plurality of separation, and to reduce the light transmitted flux, the medium of this low-transmittance for example is lower than 10% material for light transmittance.The medium of described low-transmittance is used to fill the space between the photosensitive unit array 103 disconnected from each other, further prevents or has reduced contingent optical crosstalk between the different photosensitive unit arrays 103.Especially, include only the situation of a photosensitive unit for each photosensitive unit array 103, the medium of described low-transmittance further reduces or has eliminated optical crosstalk between the adjacent photosensitive unit substantially.
According to the difference of embodiment, this concave surface cmos image sensor can be a color cmos image sensors, also can be the black and white cmos image sensor.In one embodiment, this concave surface cmos image sensor is a color cmos image sensors, wherein, each photosensitive unit comprises: pixel cell 107, be positioned at the filter coating 109 on the described pixel cell 107 and be positioned at lenticule 111 on the described filter coating 109.
With reference to figure 2 (a), show the vertical view of concave surface cmos image sensor according to an embodiment of the invention.Fig. 2 (b) shows according to one embodiment of the invention, and the concave surface cmos image sensor shown in Fig. 2 (a) is along the cutaway view of B-B ' direction.
Shown in Fig. 2 (a) and Fig. 2 (b), the photosensitive unit array 203 that the concave surface cmos image sensor comprises substrate 201 and is positioned at a plurality of separation in the described substrate 201, wherein, each in the photosensitive unit array 203 of described a plurality of separation only comprises a photosensitive unit.Further, substrate 201 comprises flexible material, flexible high-molecular organic material such as polyimides for example, and therefore, substrate 201 is flexible, thus the concave surface that allows the photosensitive unit array 203 of described a plurality of separation to form towards camera lens.
In one embodiment, this concave surface cmos image sensor is the back-illuminated type cmos image sensor.So-called " back-illuminated type cmos image sensor ", be meant for substrate 201, the pixel cell that is used for sensitization in the photosensitive unit array 203 is positioned at the upperside interconnection layer of metal wire and dielectric layer formation, make light can at first shine on the photodiode of pixel cell, this has just been avoided interconnection layer to influence light incident, thus the sensitivity that increases sensitive volume and improve imageing sensor.
Particularly, each photosensitive unit comprises pixel cell 207, filter coating 209 and lenticule 211, and in addition, this concave surface cmos image sensor also comprises the interconnection layer 204 between substrate 201 and pixel cell 207.This interconnection layer 204 is made of metal wire 205 in dielectric layer 206 and the dielectric layer 206 and lead block (not shown), this metal wire 205 and lead block can be drawn pixel cell 207 electricity, and make the pixel cell 207 in the different photosensitive unit arrays 203 interconnect.
As can be seen, MOS transistor 213 is formed at in the semi-conductive substrate 208 with photodiode 215, and is communicated with by shared second doped region 221.Like this, when irradiate light, the MOS transistor 213 that the formed electric charge of photodiode 215 induction illumination variation can be connected shifts, and then offers other signal processing circuits processing by this MOS transistor 213.Need to prove that MOS transistor 213 only is an example among Fig. 2 (b), in actual applications, each pixel cell 207 can adopt the structure of 3 transistors (3-T) for example or 4 transistors (4-T), wherein also correspondingly includes a plurality of MOS transistor.
In a preferred embodiment, Semiconductor substrate 208 also is formed with pinning layer (Pinning layer) 223 away from a side of substrate 201, this pinning layer 223 adopts the heavy doping of P type usually, it can be advanced to photodiode 215 zone away from Semiconductor substrate 208 surfaces, thereby avoid the blemish of Semiconductor substrate 208 to influence opto-electronic conversion, and then improved the sensitivity of this concave surface cmos image sensor.
Fig. 2 (c) shows according to another embodiment, and the concave surface cmos image sensor shown in Fig. 2 (a) is along the cutaway view of B-B ' direction.Need to prove, in this manual, Semiconductor substrate and wherein the doping type of zones of different only be example, not as restriction of the present invention, adopt the Semiconductor substrate of other doping types and zones of different wherein still to belong to scope of the present invention.
Shown in Fig. 2 (c), the concave surface cmos sensor shown in the structure of this concave surface cmos image sensor and Fig. 2 (b) is basic identical, and each in the photosensitive unit array 203 of a plurality of separation that it comprised only comprises a photosensitive unit.Concave surface cmos image sensor in Fig. 2 (b), the concave surface cmos image sensor also includes the 3rd doped region 225 among Fig. 2 (c), the 3rd doped region 225 comprise along and be fixed in substrate 201 on relative first 227 in plane, and the doped region that distributes perpendicular to the side 229 of described substrate 201.In one embodiment, the doping type of the 3rd doped region 225 mixes for the N type, and Semiconductor substrate 208 is mixed for the P type.
Particularly, this N type the 3rd doped region 225 that mixes and Semiconductor substrate 208 that the P type mixes constituted second photodiode 216 jointly.Similar with photodiode 215, this second photodiode 216 also is used for light signal is converted to the signal of telecommunication.Owing to only comprise a photosensitive unit in each photosensitive unit array 203, side 229 be distributed in each photosensitive unit around, therefore, in one embodiment, the 3rd doped region 225 is cap-like structure, is distributed on the photosensitive unit array 203.This cap-like structure has increased the photosensitive region and the electric charge capture ability of each photosensitive unit greatly, thus the sensitivity that has improved the concave surface cmos image sensor.
In addition, this concave surface cmos image sensor can also comprise isolated area 231, this isolated area 231 is in the substrate 201 between the photosensitive unit array 203 that separates, the medium that includes low-transmittance is to reduce the light transmitted flux, and the medium of this low-transmittance for example is lower than 10% material for light transmittance.The isolated area 231 of this low-transmittance can intercept or reduce the light that shines different photosensitive unit arrays 203 and crosstalk mutually.In one embodiment, adapt with flexible substrate 201, isolated area 231 can comprise the flexible high molecular material of low-transmittance, so that substrate 201 is after stressed bending, isolated area 231 can respective curved, thereby does not influence the variation of different photosensitive unit array 203 relative positions.
In actual applications, the metal wire 205 that is communicated with a plurality of photosensitive unit arrays 203 is drawn by the lead block (not shown) further, when encapsulation concave surface cmos image sensor, this lead block can be drawn by the lead in the image sensor package further, thereby be formed for drawing the pin of this concave surface cmos image sensor, to load input/output signal and/or drive signal.In one embodiment, the first area that also includes a plurality of separation of conduction in the substrate 201 of concave surface cmos image sensor of the present invention, and nonconducting second area, wherein, the first area of described a plurality of separation is connected with lead block in the concave surface cmos image sensor respectively, make that corresponding lead block is drawn, and then making each photosensitive unit in a plurality of photosensitive unit arrays 203 be drawn by electricity, described nonconducting second area then is used to isolate the first area of a plurality of separation of described conduction.In another embodiment, the substrate 201 of concave surface cmos image sensor of the present invention comprises anisotropic conductive material, and described anisotropic conductive material is in the direction conduction perpendicular to described substrate 201.By using anisotropic conductive material, each lead block of concave surface cmos image sensor is drawn by electricity respectively, and different lead block is short circuit mutually not also.Those skilled in the art can understand; for " anisotropic conductive material is in the direction conduction perpendicular to substrate "; wherein vertically might not be proper 90 degree; owing to reasons such as foozles; conducting direction may depart from and approximately is no more than 10 degree, for this be not that the situations of strict 90 degree also fall into protection scope of the present invention.
Can be applied to include but not limited to that according to the concave surface cmos image sensor of each embodiment of the present invention mobile phone cam, digital camera camera, Digital Video make a video recording in the first-class camera.
With reference to figure 3, show the cutaway view of concave surface cmos image sensing element according to an embodiment of the invention.
This concave surface cmos image sensing element comprises: substrate 301, and described substrate 301 comprises flexible material; Be positioned at the photosensitive unit array 303 of a plurality of separation in the described substrate 301, each in the photosensitive unit array 303 of described a plurality of separation comprises at least one photosensitive unit; And support 302, described support 302 comprises crooked supporting surface, and wherein, described substrate 301 is flexible, and be fixed on the supporting surface of described support 302, the curvature of described supporting surface makes the photosensitive unit array 303 of described a plurality of separation form the concave surface towards camera lens.
Also show camera lens 304 among Fig. 3, and schematically show light is radiated at concave surface cmos image sensing element after camera lens 304 refractions light path.Camera lens 304 has constituted camera jointly with this concave surface cmos image sensing element.It should be understood by one skilled in the art that, different according to camera lens 304 and photosensitive unit array 303 and camera lens spacing, the curvature of described support 302 is also inequality, preferably, the curvature of described support 302 make the photosensitive unit in the photosensitive unit array 303 of a plurality of separation each normal can and the angle between the light of camera lens 304 refractions less than preset range, for example less than 5 degree.
In one embodiment, in the photosensitive unit array 303 of described a plurality of separation, exist the acute angle of the normal formation of two photosensitive unit arrays 303 to spend greater than 10.
In one embodiment, in the photosensitive unit array 303 of described a plurality of separation, the row or column of each in the photosensitive unit array 303 over half comprises no more than 16 photosensitive units.
In one embodiment, described cmos image sensing element also comprises the medium of the low-transmittance between the photosensitive unit array 303 of described a plurality of separation.
In one embodiment, described concave surface cmos image sensing element is a back-illuminated type cmos image sensing element.
In one embodiment, in the photosensitive unit array 303 of described a plurality of separation each includes only a photosensitive unit, and comprise along the plane of being fixed in the described substrate 301, the another side relative with described plane, and the doped region that distributes perpendicular to the side of described substrate 301, described doped region injects by the side direction ion and forms.
In one embodiment, described substrate 301 comprises first area and nonconducting second area of a plurality of separation of conduction, the first area of wherein said a plurality of separation makes concave surface cmos image sensing element corresponding with described photosensitive unit array 303 to small part lead block and the described support 302 corresponding pin be communicated with.
In one embodiment, described substrate 301 comprises anisotropic conductive material, described anisotropic conductive material is perpendicular to the direction of described substrate 301 conduction, so that the corresponding pin connection to small part lead block and the described support 302 in the described cmos image sensing element.
In one embodiment, described a plurality of photosensitive unit arrays 303 are communicated with by metal wire, and the length of described metal wire 303 wherein over half is greater than 1.05 times of described a plurality of photosensitive unit array pitch.
Fig. 4 shows the flow process of making back-illuminated type concave surface cmos image sensor according to an embodiment of the invention, comprising:
Execution in step S402 is at the metal wire that is used to be communicated with described a plurality of pixel unit array for preparing a plurality of pixel unit array on first of first substrate, is arranged in the dielectric layer on described a plurality of pixel unit array and is distributed in described dielectric layer; Execution in step S404 deposits thin film on described dielectric layer, described film comprises flexible material; Execution in step S406, from described first substrate of second attenuate of described first substrate to preset thickness; Execution in step S408, from second formation of described first substrate filter coating array and the microlens array corresponding with described a plurality of pixel unit array, each pixel unit array constitutes the photosensitive unit array jointly with corresponding filter coating array and microlens array; Execution in step S410 from described first substrate of second etching of described first substrate, thereby makes and does not have described first substrate between described a plurality of pixel unit array, and makes the residual thickness of described dielectric layer in predetermined thickness range; Wherein, described film is flexible, thereby allows the concave surface of the pixel unit array formation of described a plurality of separation towards camera lens, and wherein, the order of described step S408 and described step S410 can be exchanged.
Fig. 5 (a) shows the cutaway view of making back-illuminated type concave surface cmos image sensor flow process according to an embodiment of the invention to Fig. 5 (e).Next,, to 5 (e) embodiment of the method for manufacturing back-illuminated type concave surface cmos image sensor of the present invention is described further in conjunction with Fig. 4 and Fig. 5 (a).
Shown in Fig. 5 (a), first substrate 501 is provided, this first substrate 501 for example is Semiconductor substrate such as silicon, germanium or silicon-on-insulator.The a plurality of pixel unit array 503 of preparation on first 502 of this first substrate 501, wherein, one or more pixel cells be can comprise in each pixel unit array 503, photodiode and one or above MOS transistor included in each pixel cell.
Then, on these a plurality of pixel unit array 503, form dielectric layer 504, wherein further include the one deck that is positioned at wherein or above metal wire 505 in this dielectric layer 504.Dielectric layer 504 is covered on first 502 of first substrate 501 equably, thereby a plurality of pixel unit array 503 are covered, and the metal wire 505 in the dielectric layer 504 then will described a plurality of pixel unit array 503 connections.Particularly, can adopt chemical vapor deposition method to form this dielectric layer 504, adopt chemical vapour deposition (CVD) or physical gas-phase deposition to form this metal wire 505.
Shown in Fig. 5 (b), deposit film 506 on dielectric layer 504, and described film 506 comprises flexible material, flexible high-molecular organic material such as polyimides for example, and therefore, described film 506 is flexible.
In one embodiment, described film 506 comprises anisotropic conductive material, and this anisotropic conductive material is specially first 502 of first substrate 501 perpendicular to first substrate 501, the direction conduction.Those skilled in the art can understand; " anisotropic conductive material is in the direction conduction perpendicular to first substrate "; wherein vertically be not proper 90 degree; owing to reasons such as foozles; conducting direction can depart from and approximately is no more than 10 degree, for this be not that the situations of strict 90 degree also fall into protection scope of the present invention.
In another embodiment, described film 506 comprises first area and nonconducting second area of a plurality of separation of conduction, the first area of a plurality of separation of described conduction is corresponding to small part lead block (not shown) with pixel unit array 503 respectively, make lead block to draw by film 506 further, thus make to the small part lead block can with corresponding pin connection in the image sensor package.Particularly, can adopt silk-screen printing technique or photoetching process to form first area and second area respectively.
Shown in Fig. 5 (c), from described first substrate 501 of second 507 attenuate of first substrate 501 to preset thickness.By described attenuate, pixel unit array 503 is exposed, the photodiode that is about to pixel unit array 503 exposes.In one embodiment, this predetermined thickness is less than or equal to the degree of depth of pixel unit array 503 in first substrate 501.Particularly, can adopt CMP (Chemical Mechanical Polishing) process to come described first substrate 501 of attenuate.
Shown in Fig. 5 (d), form filter coating array 508 and the microlens array 509 corresponding with described a plurality of pixel unit array 503 from second 507 of described first substrate 501, each pixel unit array 503 and corresponding filter coating array 508 and microlens array 509 be formation photosensitive unit arrays 510 jointly.For the black and white cmos image sensor, in one embodiment, can on second 507 of first substrate 501, form passivation layer and the microlens array corresponding with described a plurality of pixel unit array 503.
Shown in Fig. 5 (e), described first substrate of second etching from described first substrate, thereby make and do not have first substrate between described a plurality of pixel unit array 503, and make the residual thickness of described dielectric layer 504 in preset range, for example less than 1 micron, when the residual thickness of dielectric layer is zero, then corresponding to dielectric layer logical situation at 504 quarters.
In one embodiment, described etching comprises selective etch, the selective etching ratio of described selective etch between described first substrate and described dielectric layer 504 and described metal wire 505 is greater than predetermined value, for example greater than 20: 1, i.e. the degree that is etched far fewer than dielectric layer 504 of the degree that is etched of metal wire 505.In one embodiment, the residual thickness of described dielectric layer 504 is less than first distance of the metal wire 505 and first substrate, thereby makes metal wire 505 all expose.In a preferred embodiment, the dielectric layer 504 between the pixel unit array 503 is Removed All, so that film 506 exposes.Should be appreciated that described etching need not to make that dielectric layer 504 is removed fully, the residual work that has part dielectric layer 504 can't influence this concave surface cmos image sensor on the metal wire 505, therefore, this situation still belongs to scope of the present invention.Particularly, can adopt described first substrate of anisotropic dry etch process etching and dielectric layer 504.Therefore, the dielectric layer 504 of each pixel unit array 503 top can not be removed.
In one embodiment, the length of the metal wire 505 between a plurality of pixel unit array 503 is greater than the width of described etching, for example greater than 1.05 times of described etching width.Particularly, metal wire 505 can be curve or camber line shape, thereby makes its length greater than the etching width, i.e. spacing between the pixel unit array 503 of correspondence position.
After intact first substrate of etching, the semiconductor substrate region (i.e. the remaining area of first substrate) that forms photodiode, MOS transistor etc. in the pixel unit array 503 is separated mutually; But different pixel unit array 503, for example in the pixel unit array 503 of array arrangement with adjacent unit pixel array 503 in delegation and/or the same row, still can be communicated with by the metal wire that is not etched therebetween 505.
Because the dielectric layer 504 between a plurality of pixel unit array 503 is removed substantially, and film 506 is flexible, and therefore, the pixel unit array 503 of described a plurality of separation can be allowed to crooked under external force, and forms the concave surface towards camera lens.
Fig. 6 (a) shows the cutaway view of making back-illuminated type concave surface cmos image sensor flow process in accordance with another embodiment of the present invention to Fig. 6 (h).In the photosensitive unit array of a plurality of separation that comprised in this concave surface cmos image sensor each only comprises a photosensitive unit.
Need to prove, in this manual, Semiconductor substrate and wherein the doping type of zones of different only be example, not as restriction of the present invention, adopt the Semiconductor substrate of other doping types and zones of different wherein still to belong to scope of the present invention.
Shown in Fig. 6 (a), first substrate 601 is provided, this first substrate 601 for example is Semiconductor substrate such as silicon, germanium or silicon-on-insulator.The a plurality of pixel unit array 603 of preparation wherein, only comprise a pixel cell in each pixel unit array 603 on first 602 of this first substrate 601, wherein further include photodiode and one or above MOS transistor.
Then, on these a plurality of pixel unit array 603, form dielectric layer 604, wherein further include the one deck that is positioned at wherein or above metal wire 605 in this dielectric layer 604.Dielectric layer 604 is covered on first 602 of first substrate 601 equably, thereby a plurality of pixel unit array 603 are covered, and the metal wire 605 in the dielectric layer 604 then will described a plurality of pixel unit array 603 connections.
Shown in Fig. 6 (b),, thereby between described a plurality of pixel unit array 603, form a plurality of first grooves 619 from first 602 etching dielectric layer, 604 to first desired depths of first substrate 601.In a preferred embodiment, described first groove 619 makes that the metal wire 605 of top layer exposes in the dielectric layer 604 between the pixel unit array 603.
Shown in Fig. 6 (c), deposit film 606 on dielectric layer 604, and described film 606 comprises flexible material, flexible high-molecular organic material such as polyimides for example, and therefore, described film 606 is flexible.In one embodiment, the thickness of this film 606 is greater than 5 microns.
In one embodiment, described film 606 comprises anisotropic conductive material, and this anisotropic conductive material is conducting electricity perpendicular to first substrate, 601 directions.
In another embodiment, described film 606 comprises first area and nonconducting second area of a plurality of separation of conduction, the first area of a plurality of separation of described conduction is corresponding with the lead block (not shown) that pixel unit array 603 electricity are drawn respectively, makes this lead block to be drawn by film 606 further.Particularly, can adopt silk-screen printing technique or photoetching process to form first area and second area respectively.
Shown in Fig. 6 (d), from described first substrate 601 of second 607 attenuate of first substrate 601 to preset thickness.By described attenuate, pixel unit array 603 is exposed, the photodiode that is about to pixel unit array 603 exposes.In one embodiment, this predetermined thickness is less than or equal to the degree of depth of pixel unit array 603 in first substrate 601.Particularly, can adopt CMP (Chemical Mechanical Polishing) process to come described first substrate 601 of attenuate.
Shown in Fig. 6 (e),, thereby between a plurality of photosensitive unit arrays 603, form a plurality of second grooves 620 from described first substrate to the second desired depth of second etching of first substrate.Described first desired depth and second desired depth make and do not have first substrate between a plurality of photosensitive unit arrays 603, and make the residual thickness of the dielectric layer between the photosensitive unit array 603 in predetermined thickness range, for example less than 1 micron, when the residual thickness of dielectric layer was zero, then corresponding dielectric layer was carved logical situation.
In one embodiment, described etching comprises selective etch, the selective etching of described selective etch between described first substrate and described dielectric layer and described metal wire 605 be than greater than predetermined value, and for example 20: 1, i.e. the degree that is etched far fewer than dielectric layer of the degree that is etched of metal wire 605.
After intact first substrate of etching, the semiconductor substrate region (i.e. the remaining area of first substrate) that forms photodiode, MOS transistor etc. in the pixel unit array 603 is separated mutually; But different pixel unit array 603, for example in the pixel unit array 603 of array arrangement with adjacent unit pixel array 603 in delegation and/or the same row, still can be communicated with by the metal wire that is not etched therebetween 605.
Shown in Fig. 6 (f), after the pixel unit array 603 that forms a plurality of separation, also comprise: carry out the side direction ion from second 607 pairs of first substrate of described first substrate and inject, thereby described second 607 and each described pixel unit array 603 perpendicular to described first side 621 of described first substrate on form N type doped region; And carry out non-perpendicular illumination from described second 607 pairs described first substrates of described first substrate, the angle of described non-perpendicular illumination makes light only shine described second 607 and described side 621, thereby activates the ion be injected into described second 607 and described side 621.
Like this, this N type doped region and first substrate 601 that links to each other with this N type doped region have constituted second photodiode jointly.In one embodiment, second photodiode is cap-like structure and is distributed on the pixel unit array 603, this cap-like structure has increased the photosensitive region and the electric charge capture ability of each photosensitive unit greatly, thus the sensitivity that has improved the concave surface cmos image sensor.
Shown in Fig. 6 (g), form filter coating array 608 and the microlens array 609 corresponding with described a plurality of pixel unit array 603 from second 607 of described first substrate, each pixel unit array 603 and corresponding filter coating array 608 and microlens array 609 be formation photosensitive unit arrays 610 jointly.
Because the dielectric layer between a plurality of photosensitive unit arrays 610 is removed substantially, and film 606 is flexible, and therefore, the photosensitive unit array 610 of described a plurality of separation can be allowed to crooked under external force, and forms the concave surface towards camera lens.
Shown in Fig. 6 (h), after the photosensitive unit array 610 that forms a plurality of separation, the medium that can also fill low-transmittance between the photosensitive unit array 610 of described a plurality of separation is to reduce the light transmitted flux, and the medium of this low-transmittance for example is lower than 10% material for light transmittance.In one embodiment, the thickness of the medium of this low-transmittance surpasses the thickness of pixel unit array at least, promptly is filled into the position of filter coating array 608 at least.The medium of this low-transmittance can intercept the light that shines different photosensitive unit arrays 610 and crosstalk mutually, thereby improves the IMAQ quality of concave surface cmos image sensor.
Although sets forth in detail and described the present invention in accompanying drawing and aforesaid description should think that this is illustrated and describes is illustrative and exemplary, rather than restrictive; The invention is not restricted to above-mentioned execution mode.
The those skilled in the art in those present technique fields can be by research specification, disclosed content and accompanying drawing and appending claims, and understanding and enforcement are to other changes of the execution mode of disclosure.In the claims, word " comprises " element and the step of not getting rid of other, and wording " one " is not got rid of plural number.In the practical application of invention, the function of a plurality of technical characterictics of being quoted during a part possibility enforcement of rights requires.Any Reference numeral in the claim should not be construed as the restriction to scope.
Claims (29)
1. concave surface cmos image sensor comprises:
Substrate, described substrate comprises flexible material; And
Be positioned at the photosensitive unit array of described suprabasil a plurality of separation, each in the photosensitive unit array of described a plurality of separation comprises at least one photosensitive unit,
Wherein, described substrate is flexible, thereby allows the concave surface of the photosensitive unit array formation of described a plurality of separation towards camera lens.
2. concave surface cmos image sensor according to claim 1 is characterized in that, in the photosensitive unit array of described a plurality of separation, exists the acute angle of the normal formation of two photosensitive unit arrays to spend greater than 10.
3. concave surface cmos image sensor according to claim 1 is characterized in that, in the photosensitive unit array of described a plurality of separation, the row or column of each in the photosensitive unit array over half comprises no more than 16 photosensitive units.
4. concave surface cmos image sensor according to claim 1 is characterized in that, described concave surface cmos image sensor also comprises the medium of the low-transmittance between the photosensitive unit array of described a plurality of separation.
5. concave surface cmos image sensor according to claim 1 is characterized in that, described a plurality of photosensitive unit arrays are communicated with by metal wire, and the length of described metal wire wherein over half is greater than 1.05 times of described a plurality of photosensitive unit array pitch.
6. concave surface cmos image sensor according to claim 1 is characterized in that, described photosensitive unit comprises:
Pixel cell;
Be positioned at the filter coating on the described pixel cell; And
Be positioned at the lenticule on the described filter coating.
7. concave surface cmos image sensor according to claim 1 is characterized in that, described concave surface cmos image sensor is the back-illuminated type cmos image sensor.
8. concave surface cmos image sensor according to claim 7, it is characterized in that, in the photosensitive unit array of described a plurality of separation each includes only a photosensitive unit, and comprise along being fixed in described suprabasil plane, the another side relative with described plane, and the doped region that distributes perpendicular to the side of described substrate, described doped region injects by the side direction ion and forms.
9. concave surface cmos image sensor according to claim 7, it is characterized in that, described substrate comprises first area and nonconducting second area of a plurality of separation of conduction, and the first area of wherein said a plurality of separation makes in the imageing sensor that corresponding pin is communicated with to small part lead block and the image sensor package.
10. concave surface cmos image sensor according to claim 7, it is characterized in that, described substrate comprises anisotropic conductive material, described anisotropic conductive material is perpendicular to the direction of described substrate conduction, so that corresponding pin connection to small part lead block and the image sensor package in the imageing sensor.
11. a camera comprises each described concave surface cmos image sensor among the claim 1-10.
12. camera according to claim 11 is characterized in that, described camera comprises mobile phone cam.
13. a concave surface cmos image sensing element comprises:
Substrate, described substrate comprises flexible material;
Be positioned at the photosensitive unit array of described suprabasil a plurality of separation, each in the photosensitive unit array of described a plurality of separation comprises at least one photosensitive unit; And
Support, described support comprises crooked supporting surface,
Wherein, described substrate is flexible, and is fixed on the supporting surface of described support, and the curvature of described supporting surface makes the photosensitive unit array of described a plurality of separation form the concave surface towards camera lens.
14. concave surface cmos image sensing element according to claim 13 is characterized in that, in the photosensitive unit array of described a plurality of separation, exists the acute angle of the normal formation of two photosensitive unit arrays to spend greater than 10.
15. concave surface cmos image sensing element according to claim 13 is characterized in that, in the photosensitive unit array of described a plurality of separation, the row or column of each in the photosensitive unit array over half comprises no more than 16 photosensitive units.
16. concave surface cmos image sensing element according to claim 13 is characterized in that described concave surface cmos image sensing element also comprises the medium of the low-transmittance between the photosensitive unit array of described a plurality of separation.
17. concave surface cmos image sensing element according to claim 13 is characterized in that, described concave surface cmos image sensing element is a back-illuminated type cmos image sensing element.
18. concave surface cmos image sensing element according to claim 17, it is characterized in that, in the photosensitive unit array of described a plurality of separation each includes only a photosensitive unit, and comprise along being fixed in described suprabasil plane, the another side relative with described plane, and the doped region that distributes perpendicular to the side of described substrate, described doped region injects by the side direction ion and forms.
19. concave surface cmos image sensing element according to claim 17, it is characterized in that, described substrate comprises first area and nonconducting second area of a plurality of separation of conduction, and the first area of wherein said a plurality of separation makes the corresponding pin to small part lead block and the described support in the described concave surface cmos image sensing element be communicated with.
20. concave surface cmos image sensing element according to claim 17, it is characterized in that, described substrate comprises anisotropic conductive material, described anisotropic conductive material is perpendicular to the direction of described substrate conduction, so that the corresponding pin connection to small part lead block and the described support in the described concave surface cmos image sensing element.
21. concave surface cmos image sensing element according to claim 13 is characterized in that, described a plurality of photosensitive unit arrays are communicated with by metal wire, and the length of described metal wire wherein over half is greater than 1.05 times of described a plurality of photosensitive unit array pitch.
22. a camera comprises each described concave surface cmos image sensing element among the claim 13-21.
23. a method of making back-illuminated type concave surface cmos image sensor comprises:
A. at the metal wire that is used to be communicated with described a plurality of pixel unit array for preparing a plurality of pixel unit array on first of first substrate, is arranged in the dielectric layer on described a plurality of pixel unit array and is distributed in described dielectric layer;
B. deposit thin film on described dielectric layer, described film comprises flexible material;
C. from described first substrate of second attenuate of described first substrate to preset thickness;
D. from second formation of described first substrate filter coating array and the microlens array corresponding with described a plurality of pixel unit array, each pixel unit array constitutes the photosensitive unit array jointly with corresponding filter coating array and microlens array; And
E. from described first substrate of second etching of described first substrate, thereby make and do not have described first substrate between described a plurality of pixel unit array, and make the residual thickness of described dielectric layer in predetermined thickness range,
Wherein, described film is flexible, thereby allows the concave surface of the pixel unit array formation of described a plurality of separation towards camera lens, and wherein, the order of described steps d and described step e can be exchanged.
24. method according to claim 23 is characterized in that, and is further comprising the steps of between described step a and described step b:
A1. from described dielectric layer to the first desired depth of first etching of described first substrate, thereby between described a plurality of pixel unit array, form a plurality of first grooves;
Wherein, described step e comprises:
From described first substrate to the second desired depth of second etching of described first substrate, thereby between described a plurality of photosensitive unit arrays, form a plurality of second grooves, described first and second desired depths make and do not have described first substrate between described a plurality of photosensitive unit array, and make the residual thickness of described dielectric layer in predetermined thickness range.
25. according to claim 23 or 24 described methods, it is characterized in that described etching comprises selective etch, the selective etching ratio of described selective etch between described first substrate and described dielectric layer and described metal wire is greater than predetermined value.
26. method according to claim 23 is characterized in that, the length of metal wire over half is greater than 1.05 times of the width of described etching between a plurality of pixel unit array.
27. method according to claim 23 is characterized in that, each in described a plurality of pixel unit array includes only a pixel cell, and is when described step e is before described steps d, further comprising the steps of between described step e and described steps d:
E1. carry out the side direction ion from described second of described first substrate in the face of described first substrate and inject, thereby on described first side perpendicular to described first substrate of described second and each described pixel unit array, form doped region; And
E2. carry out non-perpendicular illumination from described second of described first substrate in the face of described first substrate, the angle of described non-perpendicular illumination makes light only shine described second and described side, thereby activates the ion that is injected into described second and described side.
28. method according to claim 23, it is characterized in that, the described film of described step b comprises first area and nonconducting second area of a plurality of separation of conduction, and the first area of a plurality of separation of described conduction makes the corresponding pin to small part lead block and the image sensor package in the described concave surface COMS imageing sensor be communicated with.
29. method according to claim 28 is characterized in that, described step b comprises: adopt silk-screen printing technique or photoetching process to form the first area and the described second area of described a plurality of separation of described film.
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