CN102195113B - Impedance transformer, integrated circuit device, amplifier, and communicator module - Google Patents

Impedance transformer, integrated circuit device, amplifier, and communicator module Download PDF

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CN102195113B
CN102195113B CN201110043028.XA CN201110043028A CN102195113B CN 102195113 B CN102195113 B CN 102195113B CN 201110043028 A CN201110043028 A CN 201110043028A CN 102195113 B CN102195113 B CN 102195113B
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transmission line
impedance
line
substrate
coupled
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CN102195113A (en
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增田哲
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Fujitsu Ltd
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Fujitsu Ltd
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Abstract

The invention relates to an impedance transformer, an integrated circuit device, an amplifier and a communicator module. The impedance transformer includes a first transmission line having a first impedance and provided over a first substrate having a first permittivity; a second transmission line and a third transmission line having an impedance lower than the first impedance and provided over a second substrate having a permittivity higher than the first permittivity, the second transmission line and the third transmission line being electrically coupled to the first transmission line; and a resistor coupled between the second transmission line and the third transmission line. Loss in matching circuits that make up a high output semiconductor circuit may be reduced, the circuit area may be reduced, and a high performance high output semiconductor circuit may be achieved.

Description

Impedance transformer, integrated circuit (IC) apparatus, amplifier and communication module
The cross reference of related application
The application based on and require the priority of the formerly Japanese patent application No.2010-34751 that submits on February 19th, 2010, its full content is by reference to being incorporated herein.
Technical field
The present invention relates to a kind of impedance transformer, integrated circuit (IC) apparatus, amplifier and communication module in the embodiment of this discussion.
Background technology
In the inner integrated circuit (IC) apparatus of using of communication module (as radar amplifier and base station), a plurality of integrated circuits for example coupled in parallel (couple) together, and the width that increases integrated circuit transistor grid is to realize high output.
In addition, impedance transformer is coupled in input side and the outlet side of coupled in parallel a plurality of integrated circuits together, with the match circuit by impedance transformer, carries out impedance matching.Especially, there is the impedance transformer that multiple series series (in multiple series) is coupled in quatrter-wavelength line together and be widely used in the needed integrated circuit (IC) apparatus of broadband character, to obtain broadband character by increasing the hop count (the number of quarter wave-line stages) of quatrter-wavelength line.
Correlation technique is disclosed, for example, Japanese Unexamined Patent Publication utility model registration publication number 5-65104, Japanese Laid-Open Patent application publication number 9-139639, Japanese Laid-Open Patent application publication number 10-209724, S.B.Cohn, " Optimum Design of Stepped Transmission-Line Transformers ", IRE trans.MTT-3, pp.16-21, 1955., and E.J.Wilkinson, " An N-Way Hybrid Power Divider ", IEEE Trans Microwave Theory and Techniques, vol.MTT-8, pp.116-118, 1960.
Summary of the invention
According to embodiment scheme, a kind of impedance transformer comprises: the first transmission line, has the first impedance, and be arranged on the first substrate with the first dielectric constant (permittivity); The second transmission line and the 3rd transmission line, there is the impedance lower than described the first impedance, and be arranged on the second substrate having higher than the dielectric constant of described the first dielectric constant, described the second transmission line and described the 3rd transmission line are electrically coupled to described the first transmission line; And resistor, be coupled between described the second transmission line and described the 3rd transmission line.
According to another program of embodiment, a kind of integrated circuit (IC) apparatus comprises: the first transmission line, has the first impedance, and be arranged on the first substrate with the first dielectric constant; The second transmission line and the 3rd transmission line, there is the impedance lower than described the first impedance, and be arranged on the second substrate having higher than the dielectric constant of described the first dielectric constant, described the second transmission line and described the 3rd transmission line are electrically coupled to described the first transmission line; Resistor, is coupled between described the second transmission line and described the 3rd transmission line; And integrated circuit, be electrically coupled to described the second transmission line and described the 3rd transmission line.
According to the another scheme of embodiment, a kind of communication module comprises: amplifier, for signal is amplified; And port, for exporting by described amplifier amplifying signal; Wherein said amplifier comprises: the first transmission line, has the first impedance, and be arranged on the first substrate with the first dielectric constant; The second transmission line and the 3rd transmission line, there is the impedance lower than described the first impedance, and be arranged on the second substrate having higher than the dielectric constant of described the first dielectric constant, described the second transmission line and described the 3rd transmission line are electrically coupled to described the first transmission line; Resistor, is coupled between described the second transmission line and described the 3rd transmission line; And integrated circuit, be electrically coupled to described the second transmission line and described the 3rd transmission line.
According to the present invention, can reduce the loss in the match circuit that forms high output semiconductor circuit, can reduction circuit area, and can realize the semiconductor circuit of the high output of high-performance.
Feature by particularly pointing out at least in the claims, element and combination are realized and obtain objects and advantages of the present invention.
It will be appreciated that aforementioned general description and the following detailed description are all exemplary and explanatory, and be not used in restriction as claim the present invention for required protection.
Accompanying drawing explanation
Fig. 1 is according to the vertical view of the integrated circuit (IC) apparatus of the first embodiment example and along the cross-sectional view of this vertical view center line;
Fig. 2 is according to the impedance circuit of the first embodiment example, and wherein this impedance circuit comprises the first impedance transformer, the second impedance transformer, integrated circuit, the 3rd impedance transformer and the 4th impedance transformer;
Fig. 3 A to Fig. 3 D shows according to details and the modification of the coupling of the first impedance transformer of the first embodiment and the second impedance transformer;
Fig. 4 is according to an example of the high-frequency current of the input distributor circuit part of the first embodiment;
Fig. 5 is according to the diagram of an example of the frequency characteristic of the power gain S21 of the integrated circuit amplification of the first embodiment;
Fig. 6 is according to the vertical view of the integrated circuit (IC) apparatus of the second embodiment example and along the cross-sectional view of this vertical view center line;
Fig. 7 is according to the impedance circuit of the second embodiment example, and wherein this impedance circuit comprises the first impedance transformer, the second impedance transformer, integrated circuit, the 3rd impedance transformer and the 4th impedance transformer;
Fig. 8 A and Fig. 8 B are according to the modification of the input distributor circuit of the second embodiment; And
Fig. 9 is for being used according to the perspective view of the communication module of the integrated circuit (IC) apparatus of the first or second embodiment example.
Embodiment
With reference to the accompanying drawings embodiments of the invention are described in detail.
Referring to figs. 1 to Fig. 5, the first embodiment is described.
Fig. 1 is according to the vertical view of the example of a kind of integrated circuit (IC) apparatus of the first embodiment and along the cross-sectional view of this vertical view center line.According to the integrated circuit (IC) apparatus of the first embodiment, comprise: two integrated circuit 11A and 11B that each has a plurality of power transistors, have input distributor circuit 15 and the output combiner circuit 16 of racing track formula (tournament-style) structure.The integrated circuit (IC) apparatus of the first embodiment amplifies to be become high-power output to the high-frequency signal of the 2GHz to 4GHz of input.By a plurality of transistor coupled in parallel with roughly the same characteristic being come in fact (substantially) increase transistor gate widths, essentially identical signal is input in described a plurality of transistor and by described a plurality of transistorized output and is jointly coupled in together, obtain high output.
Each integrated circuit 11A and 11B include a plurality of GaN high-electron-mobility transistrs (HEMT), and described GaN HEMT has for example grid length of approximately 0.8 μ m (gate length).
In Fig. 1, the part in integrated circuit 11A and 11B left side is input distributor circuit 15, and the part on its right side is output combiner circuit 16.Input distributor circuit 15 is assigned to the input signal with substantially the same power and phase place each port of integrated circuit 11A and 11B.Output combiner circuit 16 synthesizes the single output signal with substantially the same phase place by the output signal from integrated circuit 11A and each port of 11B.Signal distributes and synthesizes can be by using for example T-branch to carry out.
Input distributor circuit 15 comprises: be formed on substrate 21 and have the first impedance transformer 20 of high impedance, and be formed on substrate 31 and have low-impedance the second impedance transformer 30.Substrate 21 for example can have the thickness of about 0.38mm and 9.8 certain dielectric constant.Substrate 31 for example can have the thickness of about 0.25mm and 140 certain dielectric constant.Each forms quatrter-wavelength line the first impedance transformer 20 and the second impedance transformer 30.
The first impedance transformer 20 comprises branch line 22A and branch line 22B on substrate 21, and described branch line is all crooked and forms for example wide microstrip line (microstrip line) of about 0.45mm.The reason of sweep is to be reduced in the integrated circuit (IC) apparatus that signal is walked the size of (horizontal direction in Fig. 1) line upwards and obtained size reduction.When the back side of dielectric base plate ground connection and holding wire are formed on the front surface of dielectric base plate, allow microstrip design to become the transmission line of microwave and milli ripple.The microstrip line being formed on the substrate with high certain dielectric constant has substantially same.
Resistor 23 is arranged on substrate 21 in the part of substrate 31.Substrate 31 sides from two branch line 22A and the extended boost line 24A of 22B and 24B respectively with the contact both sides of resistor 23.As a result, branch line 22A and 22B are coupled to each other by resistor 23 in substrate 31 sides.
The second impedance transformer 30 comprises on substrate 31: four branch line 32AA, the 32AB, 32BA, the 32BB that as microstrip line, with curved shape, form, and four linear branch line 33AA, 33AB, 33BA, 33BB.After four branch line 32AA, 32AB, 32BA, 32BB extend with the vertical direction shown in Fig. 1, their bendings are extended with along continuous straight runs, the wedgewise that broadens, and become four linear branch line 33AA, 33AB, 33BA, 33BB.The width of every branch line 32AA, 32AB, 32BA, 32BB can be for example about 0.2mm.The width of every branch line 33AA, 33AB, 33BA, 33BB can be for example about 1.1mm.
Resistor 35A is configured such that crooked branch line 32AA and the two ends of 32AB contact.As a result, together with the end of two branch line 32AA and 32AB is coupled in by resistor 35A.Similarly, resistor 35B is configured such that crooked branch line 32BA and the two ends of 32BB contact.As a result, together with the end of two branch line 32BA and 32BB is coupled in by resistor 35B.
Resistor 34A is arranged between branch line 33AA and 33AB, and resistor 34B is arranged between branch line 33BA and 33BB.
Output combiner circuit 16 comprises: with wedge shape, be formed on two electrode 42A and the 42B on substrate 41, be formed on the substrate 51 of the certain dielectric constant with 140 and there is low-impedance the 3rd impedance transformer 40, and be formed on the substrate 61 of the certain dielectric constant with 9.8 and there is the 4th impedance transformer 60 of high impedance.The 3rd impedance transformer 40 is included on substrate 51 two linear microstrip line 52A and the 52B forming as microstrip line.
The 4th impedance transformer 60 comprises branch line 62A and branch line 62B on substrate 61, and they are all crooked and form for example microstrip line.Resistor 63 is arranged on substrate 61 in the part of substrate 51.In substrate 51 sides, from two branch line 62A and the extended boost line 64A of 62B and 64B, be coupled to the both sides of resistor 63.As a result, together with two branch line 62A are coupled in by resistor 63 in substrate 51 sides with 62B.
The 3rd impedance transformer 40 and the 4th impedance transformer 60 each self-forming quatrter-wavelength lines.
Resistor for example can be TaN film.On substrate, form after TaN film, resistor is formed and makes a part of line cover this TaN film.By using such thin film resistor, the size of resistor can be less and can reduces the size of circuit.In addition,, because TaN film is used as resistor, so resistor can be processed high-frequency signal, therefore can realize the high-quality circuit that can be operated under excessive temperature and there is long-term reliability.
In input distributor circuit 15, the end of branch line 22A is by together with being coupled in 32AB with branch line 32AA such as similar approach such as wire-bonded (wire bonding).The end of branch line 22B is by together with being coupled in 32BB with branch line 32BA such as similar approach such as wire-bonded.In addition, the end of branch line 33AA, 33AB, 33BA and 33BB is by together with being coupled in the input (electrode pad) of integrated circuit 11A and 11B such as similar approach such as wire-bonded.
In output combiner circuit 16, the output (electrode pad) of integrated circuit 11A and 11B is by together with being coupled in 42B with electrode 42A such as similar approach such as wire-bonded.Electrode 42A and 42B are by together with being coupled in 52B with electrode 52A such as similar approach such as wire-bonded.Electrode 52A and 52B are by together with being coupled in 62B with branch line 62A such as similar approach such as wire-bonded.
It is many metal line of 25 μ m that wire-bonded can be used for example diameter.Also can use band shape to engage (ribbon bonding) and replace wire-bonded.
For example, use AuSn scolder under the nitrogen atmosphere of approximately 300 degrees Celsius, by the substrate 21 of integrated circuit 11A and 11B, formation input distributor circuit 15 and 31 and the substrate 41,51 and 61 that forms output combiner circuit 16 be arranged in the package metals substrate 70 with metallic walls 71.Next, lid 79 is placed in metallic walls 71, with closure integrated circuit 11A and 11B are sealed.Electrode 75 and electrode 76 are arranged in package metals substrate 70, to allow to be electrically connected to outside.Electrode 75 and 76 is by feedthrough (feedthrough) 74 and 77 and metallic walls 71 and lid 79 electrical isolation.Input lead 73 is arranged on electrode 75 in the part of package outside, and output lead 78 is arranged on electrode 76 in the part of package outside.
Electrode 75 is coupled to the branch line 22A of the first impedance transformer 20 and the coupling IN of 22B in the inner part of encapsulation by for example terminal conjunction method.Electrode 76 is coupled to the branch line 62A of the 4th impedance transformer 60 and the coupling OUT of 62B in the inner part of encapsulation by for example terminal conjunction method.
Fig. 2 shows according to the impedance circuit of the first embodiment example, and wherein this impedance circuit comprises the first impedance transformer, the second impedance transformer, integrated circuit, the 3rd impedance transformer and the 4th impedance transformer.Quatrter-wavelength line Z1A and quatrter-wavelength line Z1B are corresponding to two crooked branch line 22A and 22B.Line Z21AA, Z21AB, Z21BA and Z21BB are corresponding to four crooked branch line 32AA, 32AB, 32BA and 32BB.Line Z22AA, Z22AB, Z22BA and Z22BB are corresponding to four rectilinear branch line 33AA, 33AB, 33BA and 33BB.Line Z21AA and Z22AA, line Z21AB and Z22AB, line Z21BA and Z22BA and line Z21BB and Z22BB form quatrter-wavelength line separately.
Quatrter-wavelength line Z3A and Z3B are corresponding to two linear microstrip line 52A and 52B.Quatrter-wavelength line Z4A and quatrter-wavelength line Z4B are corresponding to two crooked branch line 62A and 62B.
As described herein, input distributor circuit 15 forms impedance transformer the transmission line with expectation impedance operator, and wherein this impedance transformer is converted to 1 ohm or less impedance by 50 ohm.As described herein, output combiner circuit 16 forms impedance transformer the transmission line with expectation impedance operator, and wherein this impedance transformer is 50 ohm by 1 ohm or less impedance transformation.
Fig. 3 A to Fig. 3 D shows according to details and the modification of the coupling of the first impedance transformer 20 of the first embodiment and the second impedance transformer 30.Fig. 3 C shows an example of bent portions branch line 22A and two bent portions branch line 32AA and 32AB coupling.Bent portions branch line 22B is identical with the coupling of two bent portions branch line 32BA and 32BB substantially.
Fig. 3 C shows according to an example of the coupling of the first impedance transformer 20 of the first embodiment and the second impedance transformer 30.
Fig. 3 A shows according to the first modification of the first impedance transformer 20 of the first embodiment and the second impedance transformer 30 couplings.As shown in Figure 3A, corresponding to the branch line of the branch line 32AA shown in Fig. 1 and 32AB, not crooked but rectilinear.Electrode 22X is arranged on the end of branch line 22A to form T-shaped branch, and the both ends of electrode 22X utilize lead-in wire 36XA and 36XB to be coupled to the end of linear branch line 32XA and 32XB.In Fig. 3 A, each is illustrated lead-in wire 36XA and 36XB with single wire; Yet also can use a plurality of leads.Boost line 37XA and 37XB extend near the end of branch line 32XA and 32XB, and are arranged between branch line 32XA and 32XB.Boost line 37XA and 37XB resistor contact 35A.As a result, branch line 32XA and 32XB are coupled to each other by resistor 35A.
The first modification also can obtain and the essentially identical effect of Fig. 3 C illustrated embodiment.Yet, because branch line 32XA and 32XB are rectilinear rather than crooked, therefore in the first modification, by the indicated part of arrow, be longer than the indicated part of embodiment in Fig. 3 C.As a result, increased the size of device.And in the first modification, because T-shaped branch electrodes 22X is arranged on the end of branch line 22A, it is discontinuous making live width (wiring width).As a result, increased loss.
Fig. 3 B shows according to the second modification of the first impedance transformer 20 of the first embodiment and the second impedance transformer 30 couplings.In the second modification, branch line 32YA and 32YB extend towards the core of resistor 35A.The second modification also can obtain and the essentially identical effect of embodiment shown in Fig. 3 C.On the contrary, in the embodiment shown in Fig. 3 C, branch line 32AA and 32AB extend to resistor 35A at the end of substrate edges side.When the embodiment shown in Fig. 3 C and the second modification are compared, because the position of branch line 32AA and 32AB is near substrate 31 edges in the face of substrate 21, therefore in the embodiment shown in Fig. 3 C, can make the length of the part of being indicated by arrow shorter.
Fig. 3 D is the cross section of a part of resistor 35A.Resistor 35A for example can be TaN film.Resistor 35A and the branch line 32AA and the 32AB that cover a part of resistor 35A are arranged on substrate 31.
Fig. 4 is according to an example of the high-frequency current of the part input distributor circuit 15 of the first embodiment.Fig. 4 shows the result of calculation of using electromagnetic field simulation device.Due to skin effect, high-frequency current is flowing on the surface of wiring.Especially, can find out that electric current concentrates on and the both sides of the wiring of flowing through (both ends on the Width also connecting up).By using sweep 22A and 22B as the wiring on the substrate 21 at low-k, can reduce the size of circuit.It can be seen that top and bottom that the Width of high-k substrate 31 sides of the online 22A of high-frequency electrical flow and 22B is reached the standard grade are different, its center line 22A and 22B are positioned on low dielectric constant base board 21.The difference of high-frequency electrical flow shows that the top of reaching the standard grade at Width and signal phase and the size of bottom there are differences, and such difference is especially significant (noticeable) at electric discontinuity zone.
In the first embodiment, because the line on low dielectric constant base board 21 has curved shape, therefore larger in the inhomogeneities of the magnitude of current of bend separated time inside.Because have the signal attenuation being caused by the interference between branch signal, so the difference of phase place and signal magnitude can affect phase place and the size of the signal of branch line 32AA, the 32AB, 32BA and the 32BB that distribute on high-k substrate 31.The performance of integrated circuit 11A shown in Fig. 1 and 11B may not can display completely.Therefore, control the signal attenuation caused by the interference between the signal of exporting from low dielectric constant base board 21, remove and cause that the signal component of phase place and signal magnitude difference and balanced phase place and signal magnitude are effective.
Therefore,, in the first embodiment, as shown in Figure 1, resistor 35A and 35B are set to control in the son field of high-k substrate 31 interference between branch signal and remove uneven behavior (unbalanced behavior).In order to determine the validity of resistor 35A and 35B, use electromagnetic field simulation device to calculate the characteristic and do not have with the amplifier of resistor 35A and 35B.
Fig. 5 is the diagram of an example of using the frequency characteristic of the power gain S21 that integrated circuit 11A and 11B amplify.Line A has shown that resistor 35A and 35B are arranged on the situation in high-k substrate 31 son fields, and line B has shown not arrange the situation of resistor 35A and 35B.Do not arranging under the situation of resistor 35A and 35B, gain drops near 5GHz level (level) fast, so circuit performance can be degenerated due to the signal intensity in line.On the other hand, when resistor 35A and 35B are set, can find out the fast reducing that there is no gain.When comparing with the situation that resistor 35A and 35B are not set, the raising of the overall gain of frequency and frequency band also broaden to provide the characteristic of expectation.Like this, by providing resistor 35A and 35B can improve the performance of circuit.
Lead-in wire 36AA shown in lead-in wire 36XA shown in Fig. 3 B and 36XB and Fig. 3 C and 36AB are preferably coupled to coupling, and this coupling is arranged on the end in the wiring width direction that branch line 22A current density is relatively high.Because coupling is arranged on the end in wiring width direction, so can keep flowing to from branch line 22A the high level of the current density of lead-in wire.Thereby can improve signal transmission characteristics.
With reference to figure 6 to Fig. 9, will explain the second embodiment.
Fig. 6 is according to the vertical view of the integrated circuit (IC) apparatus of the second embodiment example and along the cross-sectional view of this vertical view center line.What the integrated circuit (IC) apparatus of the second embodiment was different from the first embodiment is that output combiner circuit has four branch lines.Yet other parts are substantially the same with the first embodiment.
The output combiner circuit of the integrated circuit (IC) apparatus of the second embodiment comprises: be formed on substrate 51 and have low-impedance the 3rd impedance transformer, and be formed on substrate 61 and have the 4th impedance transformer of high impedance.Substrate 51 has for example thickness of about 0.25mm and 140 certain dielectric constant.Substrate 61 has for example thickness of about 0.38mm and 9.8 certain dielectric constant.Each forms quatrter-wavelength line the 3rd impedance transformer and the 4th impedance transformer.
The 3rd impedance transformer is included in four linear branch line 53AA, 53AB, 53BA and 53BB that form microstrip line on substrate 51, and is formed on four bent portions branch line 55AA, 55AB, 55BA and 55BB on substrate 51.Article four, branch line 53AA, 53AB, 53BA and 53BB extend with straight line, and then narrowed width wedgewise is to become four branch line 55AA, 55AB, 55BA and 55BB.As shown in Figure 6, four branch line 55AA, 55AB, 55BA and 55BB extend upward in horizontal (lateral) side, and then crooked and in the vertical direction extends.Branch line 55AA and 55AB be resistor contact 56A.As a result, together with the end of two branch line 55AA and 55AB is coupled to each other by resistor 56A.Similarly, branch line 55BA and 55BB resistor contact 56B all.As a result, together with the end of two branch line 55BA and 55BB is coupled to each other by resistor 56B.Article four, the width of every of rectilinear branch line 53AA, 53AB, 53BA and 53BB is for example about 1.1mm.Article four, the width of every of bent portions branch line 55AA, 55AB, 55BA and 55BB is for example about 0.2mm.
Resistor 54A is arranged between branch line 53AA and 53AB, and resistor 54B is arranged between branch line 53BA and 53BB.
The 4th impedance transformer comprises branch line 62A and 62B on substrate 61, and described branch line 62A and 62B are crooked and form the microstrip line that width is for example about 0.45mm.The reason of sweep is will reduce width in signal trend (horizontal direction in Fig. 6) to reduce the size of integrated circuit (IC) apparatus.
Resistor 63 is arranged on substrate 61 in the part of substrate 51.In substrate 51 sides, from two branch line 62A and the extended boost line 64A of 62B and 64B, be coupled to the both sides of resistor 63.As a result, branch line 62A and 62B by resistor 63 together with substrate 51 sides are coupled to each other.
As mentioned above, the output combiner circuit of the second embodiment integrated circuit (IC) apparatus has the basic structure of inputting equally the antimetrical circuit of distributor circuit in the first embodiment.Therefore, resistor 54A, 54B, 56A, 56B and 63 have similar effect, therefore by the description dispensing about them.
Fig. 7 is according to the impedance circuit of the second embodiment example, and wherein this impedance circuit is comprised of the first impedance transformer, the second impedance transformer, integrated circuit 11A and 11B, the 3rd impedance transformer and the 4th impedance transformer.The first impedance transformer is substantially identical with the impedance transformer in the first embodiment with the second impedance transformer, therefore by the description of omitting about them.
Line Z31AA, Z31AB, Z31BA and Z31BB correspond respectively to four linear branch line 53AA, 53AB, 53BA and 53BB.Line Z32AA, Z32AB, Z32BA and Z32BB correspond respectively to four bent portions branch line 55AA, 55AB, 55BA and 55BB.Line Z31AA and Z32AA, Z31AB and Z32AB, Z31BA and Z32BA and Z31BB and Z32BB separately person form quatrter-wavelength line.Quatrter-wavelength line Z4A and quatrter-wavelength line Z4B are corresponding to two bent portions branch line 62A and 62B.
As mentioned above, output combiner circuit forms impedance transformer the transmission line with expectation impedance operator, and this impedance transformer is 50 ohm by 1 ohm or less impedance transformation.Especially, the loss of combiner circuit is exported in the loss that the second embodiment exports combiner circuit lower than the first embodiment.
The first embodiment and the second embodiment describe as above, yet various modification is all possible.
For example, Fig. 8 A is according to the first modification of the input distributor circuit of the second embodiment.Fig. 8 A is corresponding to the first half of inputting distributor circuit in Fig. 2.In the first embodiment, for example, the line Z21AA of the second impedance circuit 30 and Z22AA form quatrter-wavelength line.On the contrary, in Fig. 8 A, the second impedance circuit comprises the quatrter-wavelength line of two coupled in series.In this case, resistor 35A is also arranged on the first impedance circuit side of the second impedance circuit branch line.In addition, resistor 34A is arranged on the second level of the quatrter-wavelength line of the second impedance circuit.
Fig. 8 B is according to the second modification of the input distributor circuit of the second embodiment.In Fig. 8 B, the second impedance circuit comprises a quatrter-wavelength line.In this case, resistor 35A is also arranged on the first impedance circuit side of the second impedance circuit branch line.In addition, resistor 34A is arranged in the second impedance circuit.
The first embodiment and the second embodiment are by matching circuit substrate and for example comprise the mixing IC (HIC) that transistorized integrated circuit 11A and 11B form.Yet the first embodiment and the second embodiment are applicable to for example MMIC, this MMIC is integrated circuit 11A and the 11B that is integrated with transistor, resistor, capacitor and transmission line.
For example, integrated circuit can comprise on the substrate of AlGaN layer and GaN HEMT layer metal-insulator-metal type (MIM) capacitor and the gold wiring (gold wiring) that is formed with transistor, NiCr resistor, has SiN wall on SiC substrate.Match circuit is formed on transistorized I/O part.Input distributor circuit is included near wide Low ESR transmission line in parallel transistor and has the line of relative high impedance between signal end and low-impedance line, and has the structure of the synthetic racing track formula of applicable power.When insertion is used for controlling the NiCr resistor of uneven behavior of parallel wire component, cause that the phase place of signal and the signal component of difference in size that from high-impedance transmission line transmission, come are removed, so that the size of signal and phase place can be by equilibriums.In addition, for the power division of Low ESR transmission line, by homogenization, and can realize the semiconductor circuit of higher level of performance.
Be not limited to the first and second embodiment as described above, multiple modification is all possible.Although used in an embodiment microstrip line, also can use as other line of complanar line etc.In addition, the setting of GaN transistor in the above-described embodiments; Yet, also can use other transistor, as Si, GaAs or InP transistor etc.
In addition, circuit is comprised of transistor chip and matching circuit substrate in the above-described embodiments.Yet, for example, the mixing IC that also can use the matching circuit substrate by mmic chip and mmic chip outside to form, wherein this mmic chip partly integrated resistor, capacitor and match circuit in chip.In addition, can use the integrated MMIC of resistor, capacitor and match circuit in chip.
In an embodiment, use AuSn scolder that chip and matching circuit substrate are installed; Yet, also can install with electroconductive binder.In this case, installment work is operable at 200 ℃ or lower temperature, this temperature can suppress caused the breaking of difference of thermal coefficient of expansion in encapsulation, chip, matching circuit substrate and capacitor (condenser), thereby can improve finished product recovery rate.And, InP device etc. can be installed and there is the similar device of relative low heat resistant, and can not make performance degradation.In addition, for example can adopt the encapsulating material (such as copper) for large thermal expansion coefficient difference with fabulous heat dispersion, to obtain the circuit with higher output.In addition for example can use as the resistor of NiCr thin film resistor and so on.
According to disclosed embodiment, can realize there is higher output, the small semiconductor circuit of miniaturization and low-loss impedance inverter circuit.
As mentioned above, according to disclosed embodiment, can reduce the loss in the match circuit that forms high output semiconductor circuit, can reduction circuit area, and can realize the semiconductor circuit of the high output of high-performance.
Fig. 9 is for being used according to the perspective view of an example of the communication module 100 of the integrated circuit (IC) apparatus of the first or second embodiment.
As shown in Figure 9, communication module 100 comprise be coupled to antenna input/output terminal 90, be coupled to duplexer (duplexer) 91, low noise amplifier 92, control circuit 93, preamplifier 94, high output amplifier 95 and the filter 96 of input/output terminal 90.
In Fig. 9, right front row is emission system, and left rear side is receiving system.Input signal from input/output terminal 90 is optionally sent to low noise amplifier 92 by duplexer 91, thereby carries out reception & disposal.On the other hand, output signal is amplified by preamplifier 94, and is further amplified by high output amplifier 95, and device 96 after filtering, then by duplexer 91, is optionally sent to input/output terminal 90, then from antenna, exports.The integrated circuit (IC) apparatus of the first or second embodiment can be used as high output amplifier 95.The integrated circuit (IC) apparatus of the first or second embodiment not only can be used in transmitting/receiving communication module, but also can be used in transmitting communication module.
For example, the communication module shown in Fig. 9 100 can be used as a part for the system equipments such as radar installations, transducer or wave interference transmitter.In various types of system equipments, include according to the high performance integrated circuit device of the first or second embodiment size reduction and can contribute to improve the performance of this equipment, and make its miniaturization.
Although the embodiment of the present application is carried out label with for example " first ", " second " or " the 3rd ", these order labels do not represent the order of priority of embodiment.Many other changes and modification are apparent for those of ordinary skills.
The example of quoting herein and conditional statement all tend to aims of education to help reader understanding the present invention and to improve by inventor the concept that prior art is contributed, and being interpreted as being not restricted to these examples and the condition of specifically quoting, in specification, organizing of these examples do not relate to demonstration quality of the present invention yet.Although described embodiments of the invention in detail, should understand in the situation that not deviating from the spirit and scope of the present invention and can make various variations, replacement and change.
In addition, term "or" tends to mean to comprise "or", rather than gets rid of "or".That is,, except the alternate manner particularly pointing out or from the context the clear mode of finding out, phrase " X adopts A or B " tends to mean any arrangement that naturally comprises.That is, phrase " X adopt A or B " is satisfied with any following situation: X and is adopted A; X adopts B; Or X adopts A and B.In addition, except the alternate manner particularly pointing out or clearly from the context find out that indication is singulative, the article using in the application and claims " " and " one " generally should be interpreted as meaning " one or more ".

Claims (12)

1. an impedance transformer, comprising:
The first transmission line, has the first impedance, and is arranged on the first substrate with the first dielectric constant;
Article two, the second transmission line, is coupled to one end of described the first transmission line, and has the impedance lower than described the first impedance, and is arranged on the second substrate having higher than the dielectric constant of described the first dielectric constant;
Article two, the 3rd transmission line, is coupled to the other end of described the first transmission line, and has the impedance lower than described the first impedance, and is arranged on described second substrate; And
Resistor, is coupled between described one end of described the first transmission line and the described other end of described the first transmission line;
Wherein, described the first transmission line has curved shape, makes described one end of described the first transmission line be adjacent to the described other end of described the first transmission line.
2. impedance transformer according to claim 1, wherein, described the second transmission line comprises the wiring with multifrequency nature impedance and different live widths, and described the 3rd transmission line comprises the wiring with multifrequency nature impedance and different live widths.
3. impedance transformer according to claim 1, wherein, described the first transmission line, described the second transmission line and described the 3rd transmission line are quatrter-wavelength line transmission line.
4. impedance transformer according to claim 1, wherein, described the first transmission line, described the second transmission line and described the 3rd transmission line are microstrip line.
5. an integrated circuit (IC) apparatus, comprising:
The first transmission line, has the first impedance, and is arranged on the first substrate with the first dielectric constant;
Article two, the second transmission line, is coupled to one end of described the first transmission line, and has the impedance lower than described the first impedance, and is arranged on the second substrate having higher than the dielectric constant of described the first dielectric constant;
Article two, the 3rd transmission line, is coupled to the other end of described the first transmission line, and has the impedance lower than described the first impedance, and is arranged on described second substrate;
Resistor, is coupled between described one end of described the first transmission line and the described other end of described the first transmission line; And
Integrated circuit, is electrically coupled to described the second transmission line and described the 3rd transmission line;
Wherein, described the first transmission line has curved shape, makes described one end of described the first transmission line be adjacent to the described other end of described the first transmission line.
6. integrated circuit (IC) apparatus according to claim 5, wherein, described the second transmission line comprises the wiring with multifrequency nature impedance and different live widths, and described the 3rd transmission line comprises the wiring with multifrequency nature impedance and different live widths.
7. integrated circuit (IC) apparatus according to claim 5, wherein, described the first transmission line, described the second transmission line and described the 3rd transmission line are quatrter-wavelength line transmission line.
8. integrated circuit (IC) apparatus according to claim 5, wherein, described the first transmission line, described the second transmission line and described the 3rd transmission line are microstrip line.
9. a communication module, comprising:
Amplifier, for amplifying signal; And
Port, for exporting by described amplifier amplifying signal;
Wherein, described amplifier comprises:
The first transmission line, has the first impedance, and is arranged on the first substrate with the first dielectric constant;
Article two, the second transmission line, is coupled to one end of described the first transmission line, and has the impedance lower than described the first impedance, and is arranged on the second substrate having higher than the dielectric constant of described the first dielectric constant;
Article two, the 3rd transmission line, is coupled to the other end of described the first transmission line, and has the impedance lower than described the first impedance, and is arranged on described second substrate;
Resistor, is coupled between described one end of described the first transmission line and the described other end of described the first transmission line; And
Integrated circuit, is electrically coupled to described the second transmission line and described the 3rd transmission line;
Wherein, described the first transmission line has curved shape, makes described one end of described the first transmission line be adjacent to the described other end of described the first transmission line.
10. communication module according to claim 9, wherein, described the second transmission line comprises the wiring with multifrequency nature impedance and different live widths, and described the 3rd transmission line comprises the wiring with multifrequency nature impedance and different live widths.
11. communication modules according to claim 9, wherein, described the first transmission line, described the second transmission line and described the 3rd transmission line are quatrter-wavelength line transmission line.
12. communication modules according to claim 9, wherein, described the first transmission line, described the second transmission line and described the 3rd transmission line are microstrip line.
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JP5648295B2 (en) 2015-01-07

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