CN102194884A - Field effect transistor of hybrid conduction mechanism - Google Patents
Field effect transistor of hybrid conduction mechanism Download PDFInfo
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- CN102194884A CN102194884A CN 201110105079 CN201110105079A CN102194884A CN 102194884 A CN102194884 A CN 102194884A CN 201110105079 CN201110105079 CN 201110105079 CN 201110105079 A CN201110105079 A CN 201110105079A CN 102194884 A CN102194884 A CN 102194884A
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- Insulated Gate Type Field-Effect Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
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CN 201110105079 CN102194884B (en) | 2011-04-26 | 2011-04-26 | Field effect transistor of hybrid conduction mechanism |
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CN 201110105079 CN102194884B (en) | 2011-04-26 | 2011-04-26 | Field effect transistor of hybrid conduction mechanism |
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CN102194884A true CN102194884A (en) | 2011-09-21 |
CN102194884B CN102194884B (en) | 2013-08-14 |
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Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102364690A (en) * | 2011-11-02 | 2012-02-29 | 北京大学 | Tunneling field effect transistor (TFET) and manufacturing method thereof |
CN102664192A (en) * | 2012-05-08 | 2012-09-12 | 北京大学 | Self-adaptive composite mechanism tunneling field effect transistor (TFET) and preparation method thereof |
CN103996713A (en) * | 2014-04-22 | 2014-08-20 | 北京大学 | Vertical-channel double-mechanism conduction nano-wire tunneling transistor and preparation method |
US9484423B2 (en) | 2013-11-01 | 2016-11-01 | Samsung Electronics Co., Ltd. | Crystalline multiple-nanosheet III-V channel FETs |
US9570609B2 (en) | 2013-11-01 | 2017-02-14 | Samsung Electronics Co., Ltd. | Crystalline multiple-nanosheet strained channel FETs and methods of fabricating the same |
US9647098B2 (en) | 2014-07-21 | 2017-05-09 | Samsung Electronics Co., Ltd. | Thermionically-overdriven tunnel FETs and methods of fabricating the same |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5896314A (en) * | 1997-03-05 | 1999-04-20 | Macronix International Co., Ltd. | Asymmetric flash EEPROM with a pocket to focus electron injection and a manufacturing method therefor |
CN1602544A (en) * | 2001-12-11 | 2005-03-30 | 因芬尼昂技术股份公司 | Method for making high voltage MOS transistor by ion implantation |
US20100163845A1 (en) * | 2008-12-30 | 2010-07-01 | Niti Goel | Tunnel field effect transistor and method of manufacturing same |
US20100200916A1 (en) * | 2009-02-12 | 2010-08-12 | Infineon Technologies Ag | Semiconductor devices |
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2011
- 2011-04-26 CN CN 201110105079 patent/CN102194884B/en active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5896314A (en) * | 1997-03-05 | 1999-04-20 | Macronix International Co., Ltd. | Asymmetric flash EEPROM with a pocket to focus electron injection and a manufacturing method therefor |
CN1602544A (en) * | 2001-12-11 | 2005-03-30 | 因芬尼昂技术股份公司 | Method for making high voltage MOS transistor by ion implantation |
US20100163845A1 (en) * | 2008-12-30 | 2010-07-01 | Niti Goel | Tunnel field effect transistor and method of manufacturing same |
US20100200916A1 (en) * | 2009-02-12 | 2010-08-12 | Infineon Technologies Ag | Semiconductor devices |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102364690A (en) * | 2011-11-02 | 2012-02-29 | 北京大学 | Tunneling field effect transistor (TFET) and manufacturing method thereof |
CN102364690B (en) * | 2011-11-02 | 2013-11-06 | 北京大学 | Tunneling field effect transistor (TFET) and manufacturing method thereof |
CN102664192A (en) * | 2012-05-08 | 2012-09-12 | 北京大学 | Self-adaptive composite mechanism tunneling field effect transistor (TFET) and preparation method thereof |
WO2013166927A1 (en) * | 2012-05-08 | 2013-11-14 | 北京大学 | Self-adaptive composite mechanism tunneling field effect transistor, and manufacturing method thereof |
CN102664192B (en) * | 2012-05-08 | 2015-03-11 | 北京大学 | Self-adaptive composite mechanism tunneling field effect transistor (TFET) and preparation method thereof |
US9171944B2 (en) | 2012-05-08 | 2015-10-27 | Peking University | Self-adaptive composite tunneling field effect transistor and method for fabricating the same |
US9484423B2 (en) | 2013-11-01 | 2016-11-01 | Samsung Electronics Co., Ltd. | Crystalline multiple-nanosheet III-V channel FETs |
US9570609B2 (en) | 2013-11-01 | 2017-02-14 | Samsung Electronics Co., Ltd. | Crystalline multiple-nanosheet strained channel FETs and methods of fabricating the same |
CN103996713A (en) * | 2014-04-22 | 2014-08-20 | 北京大学 | Vertical-channel double-mechanism conduction nano-wire tunneling transistor and preparation method |
US9647098B2 (en) | 2014-07-21 | 2017-05-09 | Samsung Electronics Co., Ltd. | Thermionically-overdriven tunnel FETs and methods of fabricating the same |
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Publication number | Publication date |
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CN102194884B (en) | 2013-08-14 |
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ASS | Succession or assignment of patent right |
Owner name: BEIJING UNIV. Effective date: 20141027 Owner name: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING Free format text: FORMER OWNER: BEIJING UNIV. Effective date: 20141027 |
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Free format text: CORRECT: ADDRESS; FROM: 100871 HAIDIAN, BEIJING TO: 100176 DAXING, BEIJING |
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Effective date of registration: 20141027 Address after: 100176 No. 18, Wenchang Avenue, Beijing economic and Technological Development Zone Patentee after: Semiconductor Manufacturing International (Beijing) Corporation Patentee after: Peking University Address before: 100871 Beijing the Summer Palace Road, Haidian District, No. 5 Patentee before: Peking University |