CN102194651A - Loading cavity of semiconductor film-forming device - Google Patents
Loading cavity of semiconductor film-forming device Download PDFInfo
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- CN102194651A CN102194651A CN 201010123615 CN201010123615A CN102194651A CN 102194651 A CN102194651 A CN 102194651A CN 201010123615 CN201010123615 CN 201010123615 CN 201010123615 A CN201010123615 A CN 201010123615A CN 102194651 A CN102194651 A CN 102194651A
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- cavity
- load chamber
- supply channel
- air supply
- described cavity
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Abstract
The invention provides a loading cavity of a semiconductor film-forming device. The loading cavity comprises a cavity body, a top cover, an air supply channel, an air exhaust channel, an atmospheric pressure damping device and a filter, wherein a wafer inlet and a wafer outlet are formed on the side wall of the cavity body; the top cover covers the top end of the cavity body; the air exhaust channel extends from the inner side of the cavity body to the outer side of the cavity body through the side wall of the cavity body; the air supply channel passes through the filter, the atmospheric pressure damping device and the top cover sequentially from the outer side of the cavity body, and then enters the cavity body; and the filter is used for filtering and cleaning gases in the air supply channel. The loading cavity greatly reduces the probability of the air leakage of the air supply channel, and negative influence of the air leakage on the wafer in the loading cavity.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors, the load chamber in particularly a kind of semiconductor film formation device.
Background technology
In the semiconductor fabrication process, film formation device is used at crystal column surface growth rete.Be generally film device and comprise film-forming process chamber, load chamber and the wafer transmission cavity between described film-forming process chamber and load chamber.
Described film-forming process chamber is the place to the semiconductor crystal wafer film forming.Described load chamber is to be used for loading wafer, and realizes the place of atmosphere and vacuum environment conversion, and load chamber has admission line and discharge duct.Described wafer transmission cavity is the place that is used for transmitting wafer in described load chamber and described film-forming process chamber.
Fig. 1 is the structural representation of the load chamber of prior art.As shown in Figure 1, this load chamber comprises cavity 100 and top cover 101, has wafer inlet port (not shown) on described cavity 100 sidewalls and wafer is sent a mouthful (not shown).Described load chamber also has air supply channel 102, air pressure balance path 10 3 and exhaust passage 104, described air supply channel 102 is by the described cavity 100 outer sidewalls that enter described cavity 100, the sidewall and the described top cover 101 that run through described cavity 100, by pressure buffer device 111, pass described top cover 101 and enter described cavity 100 again; Described air pressure balance path 10 3 and described exhaust passage 104 are extended to outside the described cavity 100 by the sidewall via described cavity 100 in the described cavity 100, the exhaust outlet of described air pressure balance path 10 3 is positioned at the top position of described cavity 100, and the exhaust outlet of described exhaust passage 104 is positioned at the lower position of described cavity 100; By the switch of valve 105 and valve 106 its passages of control, described exhaust passage 104 is provided with pump 107, by described pump 107 gas in the described cavity 100 is extracted out respectively for described air supply channel 102 and described air pressure balance path 10 3.Described air supply channel 102, described air pressure balance path 10 3 and described exhaust passage 104 are used for realizing the vacuum and the atmospheric environment conversion of described load chamber.In described load chamber, supply with nitrogen by described air supply channel, open described valve 106, air in the described load chamber is discharged by described air pressure balance path 10 3, and realize nitrogen pressure and the atmospheric balance that described load chamber is interior by described air pressure balance path 10 3.The platform 108 of carrying wafer is installed in the described load chamber, and wafer enters described load chamber by described wafer inlet port, sends mouth by described wafer again and leaves described load chamber, enters in the described film-forming process chamber through described wafer transmission cavity.
Very high because of the requirement of the cleanliness factor in the described load chamber, need carry out cleaned at regular intervals to described load chamber, the top cover 101 of described load chamber is described load chamber convenient for cleaning and is provided with, and opens described top cover 101 and can carry out cleaning to described load chamber.But described load chamber also needs good sealing simultaneously, therefore, on the end face of described cavity 100 sidewalls, also be provided with top seal circle 109 and air supply channel sealing ring 110, described top seal circle is used to make the tighter closure of described top cover 101 in described cavity 100, described air supply channel sealing ring 110 is used to seal the air supply channel 102 that is positioned between described top cover 101 and described cavity 100 sidewalls, avoids directly not entering in the described cavity 100 through described pressure buffer device 111 by the gas in the described air supply channel 102.Described pressure buffer device 111 makes comparatively mild the flowing in the described cavity 100 of gas in the described air supply channel 102 in order to cushion the gas atmosphere in the described air supply channel 102.
In the load chamber of above-mentioned prior art; because the line of air supply channel sealing ring 110 footpath is less than top seal circle 109; after described top cover 101 and described cavity 100 closures; thereby described top cover 101 can not compress described air supply channel sealing ring 110 through regular meeting and cause described air supply channel 102 gas leakage, thereby can produce harmful effect to the wafer in the load chamber.In present board was safeguarded, according to the actual conditions of sealing ring, changed usually by sealing ring for the engineer, and with the generation of minimizing gas leakage situation, but this can not fundamentally solve the gas leakage problem, needs to consume manpower and material cost simultaneously.
Summary of the invention
The technical problem to be solved in the present invention provides a kind of semiconductor film formation device load chamber, is easy to generate the problem of gas leakage with the load chamber air supply channel that solves prior art.
For solving the problems of the technologies described above, the invention provides a kind of load chamber of semiconductor film formation device, comprising: cavity, top cover, air supply channel, exhaust passage and air pressure buffer unit have wafer inlet port and wafer and send mouth on the described cavity wall; Described top cover is placed on the top of described cavity; Described exhaust passage is extended to outside the described cavity by the sidewall via described cavity in the described cavity, also comprises filter, and described air supply channel by filter, pressure buffer device, passes described top cover and enters described cavity successively by outside the described cavity; Described filter is in order to carry out filter cleaning to the gas in the described air supply channel.
Optionally, also comprise the air pressure balance passage, described air pressure balance passage is extended to outside the described cavity by the sidewall via described cavity in the described cavity.
Optionally, the exhaust outlet of described air pressure balance passage is positioned at the top position of described cavity.
Optionally, the exhaust outlet of described exhaust passage is positioned at the lower position of described cavity.
Optionally, described air pressure balance passage is provided with the switch that valve is controlled its passage.
Optionally, described exhaust passage is provided with pump.
Optionally, described air supply channel is provided with the switch that valve is controlled its passage.
Optionally, on the end face of described cavity wall, also be provided with the top seal circle, be used to make the closure of described tight cap in described cavity.
Semiconductor film formation device air supply channel provided by the invention is directly entered into the inside of described cavity by described top cover by described cavity outside, avoided air supply channel in the load chamber of the prior art need run through the sidewall and the described top cover of cavity, cause the problem of air supply channel gas leakage easily, greatly reduce the probability of air supply channel gas leakage, reduced the harmful effect of gas leakage wafer in the load chamber.Load chamber of the present invention has been because therefore inspection that need not be regular and change the air supply channel sealing ring that easily causes gas leakage in the prior art has reduced the cost of changing parts, alleviated the work load that the engineer changes parts.Simultaneously, in the load chamber of the present invention, also be provided with filter on the described air supply channel, can carry out filter cleaning, can avoid the interior wafer of load chamber to be subjected to the pollution of impurity the gas that enters described cavity by described air supply channel.
Description of drawings
Fig. 1 is the structural representation of the load chamber of prior art;
Fig. 2 is the structural representation of load chamber of the present invention.
Embodiment
For above-mentioned purpose of the present invention, feature and advantage can be become apparent more, the specific embodiment of the present invention is described in detail below in conjunction with accompanying drawing.
Semiconductor film formation device load chamber of the present invention can utilize multiple substitute mode to realize; be to be illustrated below by preferred embodiment; certainly the present invention is not limited to this specific embodiment, and the known general replacement of one of ordinary skilled in the art is encompassed in protection scope of the present invention undoubtedly.
Secondly, the present invention utilizes schematic diagram to describe in detail, and when the embodiment of the invention was described in detail in detail, for convenience of explanation, schematic diagram was disobeyed the local amplification of general ratio, should be with this as limitation of the invention.
See also Fig. 2, Fig. 2 is the structural representation of load chamber of the present invention.As shown in Figure 2, the load chamber of semiconductor film formation device of the present invention comprises: cavity 200 and top cover 201 have wafer inlet port (not shown) on described cavity 200 sidewalls and wafer is sent a mouthful (not shown).
Described load chamber also has air supply channel 202, air pressure balance passage 203 and exhaust passage 204, and described air supply channel 202 by filter 210, pressure buffer device 211, passes described top cover 201 and enters described cavity 200 successively by outside the described cavity 200; Described filter 210 is in order to carry out filter cleaning to the gas in the described air supply channel 201; Described pressure buffer device 211 makes comparatively mild the flowing in the described cavity 200 of gas in the described air supply channel 202 in order to cushion the gas atmosphere in the described air supply channel 202; Described air pressure balance passage 203 and described exhaust passage 204 are extended to outside the described cavity 200 by the sidewall via described cavity 200 in the described cavity 200, the exhaust outlet of described air pressure balance passage 203 is positioned at the top position of described cavity 200, and the exhaust outlet of described exhaust passage 204 is positioned at the lower position of described cavity 200; By the switch of valve 205 and valve 206 its passages of control, described exhaust passage 204 is provided with pump 207, by described pump 207 gas in the described cavity 200 is extracted out respectively for described air supply channel 202 and described air pressure balance passage 203.Described air supply channel 202, described air pressure balance passage 203 and described exhaust passage 204 are used to realize the conversion of interior vacuum of described load chamber and atmospheric environment.In described cavity 200, supply with nitrogen by described air supply channel 202, open described valve 106, air in the described load chamber is discharged by described air pressure balance path 10 3, and realize nitrogen pressure and the atmospheric balance that described load chamber is interior by described air pressure balance path 10 3.In the time the gas in the described cavity 200 all need being extracted out or the air pressure in when the needs described cavity 200 during, then the gases in the described cavity 200 are extracted out by described exhaust passage 204 by described pump 207 less than atmospheric pressure.
The platform 208 of carrying wafer is installed in the described load chamber, and wafer enters described load chamber by described wafer inlet port, sends mouth by described wafer again and leaves described load chamber, enters in the described film-forming process chamber through described wafer transmission cavity.
Very high because of the requirement of the cleanliness factor in the described load chamber, need carry out cleaned at regular intervals to described load chamber, the top cover 201 of described load chamber is described load chamber convenient for cleaning and is provided with, and opens described top cover 201 and can carry out cleaning to described load chamber.But simultaneously described load chamber also needs good sealing, therefore, also is provided with top seal circle 209 on the end face of described cavity 200 sidewalls, and described top seal circle is used to make the tighter closure of described top cover 201 in described cavity 200.
In the semiconductor film formation device load chamber of the present invention, described air supply channel 202 is directly entered into the inside of described cavity 200 by described top cover 201 by described cavity 200 outsides, avoided air supply channel in the load chamber of the prior art to run through the sidewall and the described top cover of cavity, cause the problem of air supply channel gas leakage easily, greatly reduce the probability of air supply channel gas leakage, reduced the harmful effect of gas leakage wafer in the load chamber.Load chamber of the present invention has been because therefore inspection that need not be regular and change the air supply channel sealing ring that easily causes gas leakage in the prior art has reduced the cost of changing parts, alleviated the work load that the engineer changes parts.Simultaneously, in the load chamber of the present invention, also be provided with filter 210 on the described air supply channel 202, can carry out filter cleaning, can avoid the interior wafer of load chamber to be subjected to the pollution of impurity the gas that enters described cavity 200 by described air supply channel 202.
Obviously, those skilled in the art can carry out various changes and modification to the present invention and not break away from the spirit and scope of the present invention.Like this, if of the present invention these are revised and modification belongs within the scope of claim of the present invention and equivalent technologies thereof, then the present invention also is intended to comprise these changes and modification interior.
Claims (8)
1. the load chamber of a semiconductor film formation device, comprising: cavity, top cover, air supply channel, exhaust passage and air pressure buffer unit have wafer inlet port and wafer and send mouth on the described cavity wall; Described top cover is placed on the top of described cavity; Described exhaust passage is extended to outside the described cavity by the sidewall via described cavity in the described cavity, it is characterized in that, also comprise filter, described air supply channel is by outside the described cavity, by filter, pressure buffer device, pass described top cover and enter described cavity successively; Described filter is in order to carry out filter cleaning to the gas in the described air supply channel.
2. the load chamber of semiconductor film formation device as claimed in claim 1 is characterized in that, also comprises the air pressure balance passage, and described air pressure balance passage is extended to outside the described cavity by the sidewall via described cavity in the described cavity.
3. the load chamber of semiconductor film formation device as claimed in claim 2 is characterized in that, the exhaust outlet of described air pressure balance passage is positioned at the top position of described cavity.
4. as the load chamber of the described semiconductor film formation device of arbitrary claim in claim 1 or 3, it is characterized in that the exhaust outlet of described exhaust passage is positioned at the lower position of described cavity.
5. the load chamber of semiconductor film formation device as claimed in claim 2 is characterized in that, described air pressure balance passage is provided with the switch that valve is controlled its passage.
6. as the load chamber of the described semiconductor film formation device of arbitrary claim in claim 1 or 4, it is characterized in that described exhaust passage is provided with pump.
7. the load chamber of semiconductor film formation device as claimed in claim 1 is characterized in that, described air supply channel is provided with the switch that valve is controlled its passage.
8. the load chamber of semiconductor film formation device as claimed in claim 1 is characterized in that, also is provided with the top seal circle on the end face of described cavity wall, is used to make the closure of described tight cap in described cavity.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010123615 CN102194651B (en) | 2010-03-12 | 2010-03-12 | Loading cavity of semiconductor film-forming device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010123615 CN102194651B (en) | 2010-03-12 | 2010-03-12 | Loading cavity of semiconductor film-forming device |
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| CN102194651A true CN102194651A (en) | 2011-09-21 |
| CN102194651B CN102194651B (en) | 2013-03-27 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN 201010123615 Active CN102194651B (en) | 2010-03-12 | 2010-03-12 | Loading cavity of semiconductor film-forming device |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103474319A (en) * | 2013-09-12 | 2013-12-25 | 武汉新芯集成电路制造有限公司 | Ion implanter reducing grape-shaped defects of wafers |
| CN104238474A (en) * | 2013-06-18 | 2014-12-24 | 陈明生 | Wireless monitoring system of storage cabinet inflation system |
| CN105097600A (en) * | 2014-04-15 | 2015-11-25 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Vacuum lock chamber |
| CN111634116A (en) * | 2020-04-13 | 2020-09-08 | 常州比太科技有限公司 | Drying oven for drying or curing solar cell silicon wafer |
| CN114262920A (en) * | 2020-09-16 | 2022-04-01 | 长鑫存储技术有限公司 | Wafer electroplating equipment, air leakage detection device and method and wafer electroplating method |
| CN116978833A (en) * | 2023-09-20 | 2023-10-31 | 上海谙邦半导体设备有限公司 | Vacuum atmosphere switching device and method |
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| CN1322556C (en) * | 2001-02-15 | 2007-06-20 | 东京毅力科创株式会社 | Work treating method and treating device |
| KR100834141B1 (en) * | 2006-12-29 | 2008-06-02 | 세메스 주식회사 | Apparatus for drying substrate |
| CN100561666C (en) * | 2005-08-05 | 2009-11-18 | 中微半导体设备(上海)有限公司 | Semiconductor technology processing system and processing method thereof |
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| CN1322556C (en) * | 2001-02-15 | 2007-06-20 | 东京毅力科创株式会社 | Work treating method and treating device |
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Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104238474A (en) * | 2013-06-18 | 2014-12-24 | 陈明生 | Wireless monitoring system of storage cabinet inflation system |
| CN104238474B (en) * | 2013-06-18 | 2017-07-18 | 陈明生 | The wireless supervisory control system of storage cabinet inflation system |
| CN103474319A (en) * | 2013-09-12 | 2013-12-25 | 武汉新芯集成电路制造有限公司 | Ion implanter reducing grape-shaped defects of wafers |
| CN103474319B (en) * | 2013-09-12 | 2015-11-18 | 武汉新芯集成电路制造有限公司 | A kind of ion implantor reducing wafer grape spherical defect |
| CN105097600A (en) * | 2014-04-15 | 2015-11-25 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Vacuum lock chamber |
| CN105097600B (en) * | 2014-04-15 | 2018-07-06 | 北京北方华创微电子装备有限公司 | A kind of vacuum lock chamber |
| CN111634116A (en) * | 2020-04-13 | 2020-09-08 | 常州比太科技有限公司 | Drying oven for drying or curing solar cell silicon wafer |
| CN114262920A (en) * | 2020-09-16 | 2022-04-01 | 长鑫存储技术有限公司 | Wafer electroplating equipment, air leakage detection device and method and wafer electroplating method |
| CN116978833A (en) * | 2023-09-20 | 2023-10-31 | 上海谙邦半导体设备有限公司 | Vacuum atmosphere switching device and method |
| CN116978833B (en) * | 2023-09-20 | 2023-12-19 | 上海谙邦半导体设备有限公司 | Vacuum atmosphere switching device and method |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102194651B (en) | 2013-03-27 |
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