CN102193341A - Method and device for processing photoresist - Google Patents
Method and device for processing photoresist Download PDFInfo
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- CN102193341A CN102193341A CN 201010124586 CN201010124586A CN102193341A CN 102193341 A CN102193341 A CN 102193341A CN 201010124586 CN201010124586 CN 201010124586 CN 201010124586 A CN201010124586 A CN 201010124586A CN 102193341 A CN102193341 A CN 102193341A
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Abstract
The invention discloses a method and a device for processing a photoresist. The method comprises the following steps of: preparing the photoresist to be processed, wherein the photoresist to be processed contains a large-size polymer chain; processing the photoresist to be processed by utilizing ultrasonic waves, wherein the frequency of the ultrasonic waves is selected to be between 10 and 50 KHz. The invention also discloses a device for implementing the method. By using the method and the device for processing the photoresist, the aim of processing the photoresist more simply, effectively and frugally is fulfilled.
Description
Technical field
The present invention relates to manufacture of semiconductor, relate in particular to a kind of method and apparatus of handling photoresist.
Background technology
In semiconductor was made, photoetching process was a wherein very important processing step.The essence of photoetching is will carry out after the patch structure is copied on the silicon chip of etching and ion injection.These structures at first are produced on the quartz template of mask plate by name with graphic form.Ultraviolet light see through mask plate figure transfer to the photo-conductive film of silicon chip surface.Common photoetching is performed such: figure appears on the silicon chip behind the photoetching development, with a kind of chemical etching technology film pattern is imaged on the following silicon chip then, perhaps is sent to ion injection workspace and finishes the selectable doping of graph area on the silicon chip.Transfer to various figures on the silicon chip and determined numerous features of device, for example: the interconnection line and the silicon doping district of through hole, each interlayer necessity of device.
Must use photoresist in the photoetching.Photoresist is called photoresist again, the photosensitive mixing material of being made up of resin, optical brightener and three kinds of principal ingredients of solvent.Also be added with adjuvant in some photoresist, it is the chemical substance that is used to control photoresist material special aspects.Wherein resin is a kind of polymkeric substance (organic polymer that comprises carbon, hydrogen, oxygen) matrix of inertia, is used for the different materials of photoresist is got together.Resin has given its machinery of photoresist and chemical property, for example adhesiveness, film thickness, compliance and hot-fluid stability.Optical brightener is the photosensitive composition in the photoresist, and it, can react especially in the ultraviolet region to the radiation energy of light form.Solvent makes photoresist keep liquid condition.Most solvents volatilize before exposure, for the almost not influence of spectrochemical property of photoresist.
Make the technical sophistication of photoresist, kind is more.According to its chemical reaction mechanism and development principle, can divide negative photoresist and positive photoresist two classes.What form insoluble material after the illumination is negative photoresist; Otherwise, be insoluble to some solvent, after illumination, become the positive photoresist that is of soluble substance.Utilize this performance, with the photoresist making coatings, just can be at the required circuitous pattern of silicon chip surface etching.
Single polymer chain in the photoresist is usually less than 5 nanometers.But after photoresist was placed a period of time, polymer chain can constantly be assembled, and the size of the polymer chain of Xing Chenging can be between 20 to 30 nanometers at last.This large-sized polymer chain can cause bridge defective (Bridge defect) in photoetching.This defective finally can cause the tube core at this place to lose efficacy.Therefore such photoresist can not reuse, and reuses after can only handling.
At present, be ultrafiltration for the above-mentioned disposal route that contains the photoresist of large-sized polymers chain.Promptly the method by ultrafiltration filters out the bigger polymer chain in the photoresist, to reach the purpose that can continue use to photoresist after the ultrafiltration.By this method, can handle the back to photoresist and continue to use, save cost.
But the method that adopts above-mentioned ultrafiltration still can not solve the problem that photoresist is handled fully.At first, adopt this method need use filter plant, this equipment itself has certain cost, therefore goes up with regard to cost, and this method is not a kind of very perfect method.Secondly, adopt the method more complicated of ultrafiltration.Once more, be kept in the container, when adopting the method for ultrafiltration to handle, photoresist need be taken out from container such photoresist because photoresist is normally airtight.And because the characteristic of photoresist also will be carried out airtight hyperfiltration treatment to photoresist.So just increased the complexity of using hyperfiltration process that photoresist is handled.
Therefore, need a kind of simpler, effective, method and apparatus that photoresist is handled of saving in the prior art.
Summary of the invention
The invention discloses a kind of method and apparatus of handling photoresist, this method may further comprise the steps: prepare pending photoresist, contain large-sized polymer chain in this pending photoresist; Utilize ultrasound wave that this pending photoresist is handled, this frequency of ultrasonic is chosen between the 10-50KHz.This hyperacoustic sound intensity is at 1-1000w/cm
2Between.Utilize time that ultrasound wave handles this pending photoresist between 2-20 minute.
The size of above-mentioned large-sized polymer chain is between the 20-30 nanometer.
Preferably, this pending photoresist is placed in the closed container.
The invention also discloses a kind of device of handling photoresist, it comprises the photoresist container, and in order to place pending photoresist, this pending photoresist contains large-sized polymer chain; Ultrasonic generator is used to produce ultrasound wave, and this frequency of ultrasonic is chosen between the 10-50KHz; Be arranged on the ultrasound wave medium between this ultrasound wave container and this ultrasonic generator, in order to the conduction ultrasound wave; And chamber, in order to hold this ultrasound wave medium and this photoresist container.Described hyperacoustic sound intensity is at 1-1000w/cm
2Between.
The size of above-mentioned large-sized polymer chain is between the 20-30 nanometer.
Preferably, this pending photoresist is placed in the closed container.
Above-mentioned ultrasonic generator can be board-like ultrasonic generator, cartridge type ultrasonic generator or bar type ultrasonic generator
By the method and apparatus of processing photoresist of the present invention, the purpose that photoresist is handled of reached simpler, effective, saving.
Introduced the notion of a series of reduced forms in the summary of the invention part, this will further describe in the embodiment part.Summary of the invention part of the present invention does not also mean that key feature and the essential features that will attempt to limit technical scheme required for protection, does not more mean that the protection domain of attempting to determine technical scheme required for protection.
Description of drawings
Following accompanying drawing of the present invention is used to understand the present invention at this as a part of the present invention.Embodiments of the invention and description thereof have been shown in the accompanying drawing, have been used for explaining principle of the present invention.In the accompanying drawings,
Fig. 1 is the method flow diagram of according to an embodiment of the invention photoresist being handled;
Fig. 2 is the schematic representation of apparatus of according to an embodiment of the invention photoresist being handled.
Embodiment
In the following description, a large amount of concrete details have been provided so that more thorough understanding of the invention is provided.Yet, it will be apparent to one skilled in the art that the present invention can need not one or more these details and implemented.In other example,, be not described for technical characterictics more well known in the art for fear of obscuring with the present invention.
With reference to figure 1, be the process flow diagram of the method 100 according to an embodiment of the invention photoresist handled.Method 100 starts from step 110, wherein prepares pending photoresist.In one embodiment of the invention, this pending photoresist is contained in the closed container, with convenient pending photoresist is handled.But the present invention is also unrestricted pending photoresist is contained in the airtight container, it only is rotten in order to prevent photoresist doing like this.This pending photoresist is exactly the photoresist with big polymer chain recited above, and for example this polymer chain is the 20-30 nanometer.As mentioned above, therefore such photoresist can not directly use in photoetching owing to can produce the bridge defective in photoetching process, need handle it.Certainly, the present invention can handle other photoresist with large-sized polymers chain, is not limited to range of size recited above.
In order to produce above-mentioned ultrasonic cavitation effect better, described frequency of ultrasonic is chosen between the 10-50KHz.Ultrasound wave in this frequency range belongs to low-frequency ultrasonic waves, uses the ultrasonic wave energy in this frequency range to implement method of the present invention better.The intensity of ultrasonic cavitation effect is relevant with frequency, and frequency is high more, and cavitation intensity is weak more, and its degree that weakens is very big.For example, the cavitation intensity when frequency is 25KHz likens 1 to, and the cavitation intensity during frequency 40KHz is 1/8 then, and when having arrived 80KHz, cavitation intensity just drops to 0.02.Therefore, the selection of this frequency range can better be implemented the present invention.Hyperacoustic sound intensity is chosen in 1-1000w/cm
2Between, ultrasound wave to the selection of time of pending photoresist effect between 2-20 minute.In this sound intensity scope with in the processing time, can produce preferable ultrasonic cavitation effect, thereby can implement the present invention better.
By using ultrasound wave to make the inner cavitation effect that produces of pending photoresist, thereby the photoresist to the large-size polymer chain is handled, make this large-size polymer chain be divided into single polymkeric substance, thereby make that these photoresists can continue to use, saved cost greatly.Ultrasound wave in this method can use ultrasonic generator to produce.This ultrasonic generator can be board-like ultrasonic generator, cartridge type ultrasonic generator or bar type ultrasonic generator.These can be used for implementing the method for processing photoresist of the present invention.In order more effectively to implement the present invention, when utilizing ultrasound wave that photoresist is handled, can between the container of placing photoresist and ultrasonic generator, be provided for conducting hyperacoustic ultrasound wave medium.This ultrasound wave medium for example can be water, oil or other solvents.
By the method for processing photoresist of the present invention, can make the large-sized polymers chain that contains in the photoresist become single polymkeric substance, make this photoresist to reuse, thus reached simpler, effective, saved photoresist is handled.
Further, the invention also discloses a kind of device of handling photoresist.With reference to figure 2, be the synoptic diagram of the device 200 according to an embodiment of the invention photoresist handled.This device comprises photoresist container 210, wherein places pending photoresist.Because the character of photoresist, this photoresist container 210 is preferably airtight, and is rotten to prevent photoresist.This device 200 also comprises ultrasonic generator 220, is used to produce ultrasound wave.This ultrasonic generator 220 can be board-like ultrasonic generator, cartridge type ultrasonic generator or bar type ultrasonic generator.As mentioned above, the frequency of ultrasonic that this ultrasound wave generator 220 produces preferably is chosen between the 10-50KHz, and the sound intensity is at 1-1000w/cm
2Between.Device 200 also comprises ultrasound wave medium 230.This ultrasound wave medium 230 is placed between photoresist container 210 and the ultrasonic generator 220, in order to the conduction ultrasound wave.Preferably, this ultrasound wave medium 230 can be selected water.But also can select other media, for example oil.This device 200 also comprises chamber 240, in order to hold ultrasound wave medium and photoresist container 210.In when operation, open ultrasonic generator 220 producing ultrasound wave, this ultrasound wave acts on after by ultrasound wave medium 230 on the pending photoresist in the ultrasound wave container 210.Through the photoresist after this device processing, the size of its polymer chain can become single polymkeric substance by the bigger polymer chain of 20-30 nanometer, and the size of this single polymkeric substance is usually less than 5 nanometers.Can certainly handle other large-sized polymer chains.After handling litho machine glue, the photoresist container that other pending photoresist only need will be housed is positioned over to handle in this chamber and gets final product.
By the method and apparatus of processing photoresist of the present invention, the purpose that photoresist is handled of reached simpler, effective, saving.
The present invention is illustrated by the foregoing description, but should be understood that, the foregoing description just is used for for example and illustrative purposes, but not is intended to the present invention is limited in the described scope of embodiments.It will be appreciated by persons skilled in the art that in addition the present invention is not limited to the foregoing description, can also make more kinds of variants and modifications according to instruction of the present invention, these variants and modifications all drop in the present invention's scope required for protection.Protection scope of the present invention is defined by the appended claims and equivalent scope thereof.
Claims (10)
1. a method of handling photoresist may further comprise the steps: prepare pending photoresist, contain large-sized polymer chain in the described pending photoresist; Utilize ultrasound wave that described pending photoresist is handled, described frequency of ultrasonic is chosen between the 10-50KHz.
2. method according to claim 1 is characterized in that the size of described large-sized polymer chain is between the 20-30 nanometer.
3. method according to claim 1 is characterized in that, describedly utilizes time that ultrasound wave handles described pending photoresist between 2-20 minute.
4. method according to claim 1 is characterized in that, described hyperacoustic sound intensity is at 1-1000w/cm
2Between.
5. method according to claim 1 is characterized in that, described pending photoresist is placed in the closed container.
6. a device of handling photoresist comprises the photoresist container, and in order to place pending photoresist, described pending photoresist contains large-sized polymer chain; Ultrasonic generator is used to produce ultrasound wave, and described frequency of ultrasonic is chosen between the 10-50KHz; Be arranged on the ultrasound wave medium between described ultrasound wave container and the described ultrasonic generator, in order to the conduction ultrasound wave; And chamber, in order to hold described ultrasound wave medium and described photoresist container.
7. device according to claim 6 is characterized in that the size of described large-sized polymer chain is between the 20-30 nanometer.
8. device according to claim 6 is characterized in that, described hyperacoustic sound intensity is at 1-1000w/cm
2Between.
9. device according to claim 6 is characterized in that, described photoresist container is airtight.
10. device according to claim 6 is characterized in that, described ultrasonic generator can be board-like ultrasonic generator, cartridge type ultrasonic generator or bar type ultrasonic generator.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010124586 CN102193341B (en) | 2010-03-11 | 2010-03-11 | Method and device for processing photoresist |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010124586 CN102193341B (en) | 2010-03-11 | 2010-03-11 | Method and device for processing photoresist |
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| Publication Number | Publication Date |
|---|---|
| CN102193341A true CN102193341A (en) | 2011-09-21 |
| CN102193341B CN102193341B (en) | 2013-06-12 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN 201010124586 Active CN102193341B (en) | 2010-03-11 | 2010-03-11 | Method and device for processing photoresist |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5876875A (en) * | 1996-12-23 | 1999-03-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Acoustic wave enhanced developer |
| CN1286227A (en) * | 1999-08-31 | 2001-03-07 | 三星电子株式会社 | Apparatus for supersonic dispersion of quartz solution |
| CN101001912A (en) * | 2004-09-09 | 2007-07-18 | 三菱丽阳株式会社 | Nanosubstance-containing composition, manufacturing method of the same and composite made by using it |
-
2010
- 2010-03-11 CN CN 201010124586 patent/CN102193341B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5876875A (en) * | 1996-12-23 | 1999-03-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Acoustic wave enhanced developer |
| CN1286227A (en) * | 1999-08-31 | 2001-03-07 | 三星电子株式会社 | Apparatus for supersonic dispersion of quartz solution |
| CN101001912A (en) * | 2004-09-09 | 2007-07-18 | 三菱丽阳株式会社 | Nanosubstance-containing composition, manufacturing method of the same and composite made by using it |
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| CN102193341B (en) | 2013-06-12 |
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