CN102193319B - Double-platform exchange system for wafer stage of photoetching machine - Google Patents
Double-platform exchange system for wafer stage of photoetching machine Download PDFInfo
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- CN102193319B CN102193319B CN 201010118297 CN201010118297A CN102193319B CN 102193319 B CN102193319 B CN 102193319B CN 201010118297 CN201010118297 CN 201010118297 CN 201010118297 A CN201010118297 A CN 201010118297A CN 102193319 B CN102193319 B CN 102193319B
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Abstract
The invention discloses a double-platform exchange system for wafer stages of a photoetching machine, comprising a first wafer stage in a pretreatment station and a second wafer stage in an exposure station. When the first wafer stage moves from the pretreatment station to the exposure station, the second wafer stage moves from the exposure station to the pretreatment station, and therefore double-platform exchange operation is realized. During the process of double-platform exchange operation, the first wafer stage and the second wafer stage do not stay at an exchange position for switching; instead, the first wafer stage directly moves from the pretreatment station to the exposure station, and the second wafer stage directly moves from the exposure station to the pretreatment station. According to the technique scheme in the invention, the first wafer stage and the second wafer stage moves simultaneously, and the two wafer stages need not to stay at an exchange position for switching, thereby avoiding the problem existing in the prior art that the switching consumes considerable time; therefore, production efficiency is improved.
Description
Technical field
The present invention relates to a kind of photo-etching machine silicon slice bench double-bench switching system, relate in particular to a kind of photo-etching machine silicon slice bench double-bench switching system that improves efficient.
Background technology
In the production run of integrated circuit (IC) chip, the exposure transfer printing (photoetching) of the design configuration of chip on the silicon chip surface photoresist is one of most important operation wherein, and the used equipment of this operation is called litho machine (exposure machine).The resolution of litho machine and exposure efficiency greatly affect characteristic line breadth (resolution) and the production efficiency of integrated circuit (IC) chip, and as kinematic accuracy and the work efficiency of the silicon chip ultraprecise motion locating system (being designated hereinafter simply as silicon wafer stage) of litho machine critical system, determined to a great extent again resolution and the exposure efficiency of litho machine.
The advanced scanning projecting photoetching machine ultimate principle as shown in Figure 1.See through mask 47 from the deep UV (ultraviolet light) of light source 45, lens combination 49 with a part of pattern imaging on the mask on certain chip of silicon chip 50.Mask and silicon chip oppositely are synchronized with the movement by certain speed proportional, and the whole pattern imagings on the mask are on the certain chip of silicon chip the most at last.
The basic role of silicon wafer stage motion locating system is exactly to carry silicon chip and by the speed of setting and direction motion in exposure process, to realize the accurate transfer in mask graph each zone on the silicon chip.Because the live width of chip very little (minimum feature has reached 45nm at present) for guaranteeing alignment precision and the resolution of photoetching, just requires silicon wafer stage to have high motion positions precision; Because the movement velocity of silicon wafer stage affects the production efficiency of photoetching to a great extent, from the angle of enhancing productivity, requires again the movement velocity of silicon wafer stage to improve constantly.
Traditional silicon wafer stage, described such as patent EP 0729073 and patent US 5996437, only have a silicon chip motion positions unit in the litho machine, i.e. a silicon wafer stage.The preliminary works such as leveling and focusing all will be finished in the above, and required chronic of these work particularly aimed at, owing to require to carry out the high low-velocity scanning of precision (typical alignment scanning speed is 1mm/s), so required time is very long.And it is very difficult to reduce its working time.Like this, in order to improve the production efficiency of litho machine, just must improve constantly the movement velocity of stepping and the exposure scanning of silicon wafer stage.And the raising of speed will unavoidably cause the deterioration of dynamic performance, need to take a large amount of technical measures guarantees and improve the kinematic accuracy of silicon wafer stage, will greatly improve for keeping existing precision or reaching the cost that high precision more will pay.
Patent WO 98/40791 (open date: 1998.9.17; Country origin: Holland) described structure adopts two silicon wafer stage structures, the exposure preliminary works such as fluctuating plate, prealignment, aligning are transferred on second silicon wafer stage, and with the while self-movement of exposure silicon wafer stage.Under the prerequisite that does not improve the silicon wafer stage movement velocity, a large amount of preliminary work of exposure silicon wafer stage is shared by second silicon wafer stage, thereby has greatly shortened the every working time of silicon chip on the exposure silicon wafer stage, has increased substantially production efficiency.Yet this pair silicon wafer stage technical scheme is when realizing photo-mask process, because two silicon wafer stages are trapped in a switch and carry out blocked operation, this blocked operation is irrelevant with actual photo-mask process, so it has produced suitable time loss, has affected production efficiency.
Summary of the invention
For the problems referred to above of the prior art, the invention provides a kind of photo-etching machine silicon slice bench double-bench switching system, comprise the first guide surface and the second guide surface that arrange along being parallel to X-direction; Be parallel to the first moving guide rail and the second moving guide rail that Y-direction arranges with the edge, described the first moving guide rail be slidingly connected to described the first guide surface to move along being parallel to X-direction, and described the first moving guide rail is flexible along being parallel to Y-direction with respect to described first guide surface of its connection, and described the second moving guide rail be slidingly connected to described the second guide surface to move along being parallel to X-direction, and described the second moving guide rail is flexible along being parallel to Y-direction with respect to described second guide surface of its connection, wherein, described the first silicon wafer stage be connected the second silicon wafer stage and be coupled to respectively described the first moving guide rail and be connected the second moving guide rail and relatively connecting the opposite side zone of the first guide surface and the second guide surface.Wherein, control described the first moving guide rail and described the second moving guide rail along being parallel to X-direction and along the displacement that is parallel to Y-direction, making described the first silicon wafer stage and described the second silicon wafer stage switch and when switch, mutually dodge not occur to touch.
Compared to existing technology, double-platform switching system provided by the invention is so that the first silicon wafer stage and the second silicon wafer stage are mobile simultaneously, can't produce as switching and consume the suitable time because two silicon wafer stages are trapped in a switch in the prior art, improve the productive rate of litho machine.
Description of drawings
Fig. 1 is the principle of work synoptic diagram of litho machine;
Fig. 2 shows the synoptic diagram when the first silicon wafer stage and the second silicon wafer stage are in the initialization state in according to one preferred embodiment of the present invention the photo-etching machine silicon slice bench double-bench switching system;
Fig. 3 shows the first silicon wafer stage among Fig. 2 and the synoptic diagram of the second silicon wafer stage exchange process;
Fig. 4 shows the first silicon wafer stage among Fig. 2 and the exchange of the second silicon wafer stage view after complete.
Embodiment
Below, further describe according to a preferred embodiment of the invention by reference to the accompanying drawings.
Photo-etching machine silicon slice bench double-bench switching system according to one preferred embodiment of the present invention comprises: along the first guide surface 1 and the second guide surface 2 that are parallel to the X-direction setting; Along the first moving guide rail 3 and the second moving guide rail 4 that are parallel to the Y-direction setting, it is slidingly connected respectively to the first guide surface 1 and the second guide surface 2, moving along being parallel to X-direction, and the first moving guide rail 3 is with to be connected moving guide rail 4 flexible along being parallel to Y-direction with respect to the first guide surface 1 and second guide surface 2 of its connection respectively; The first silicon wafer stage 5 and the second silicon wafer stage 6 are coupled to respectively the first moving guide rail 3 and are connected moving guide rail 4 and are relatively connecting the opposite side zone of the first guide surface 1 and the second guide surface 2.In this preferred embodiment, the first silicon wafer stage 5 and the second silicon wafer stage 6 are fixed in respectively the end of the first moving guide rail 3 and the second moving guide rail 4.When the first silicon wafer stage 5 moves to exposure station (exposure position) from pre-service station (measurement position), the second silicon wafer stage 6 moves to the pre-service station from the exposure station, thereby carry out two platform swap operations, the first silicon wafer stage 5 and the second silicon wafer stage 6 can not be trapped in a switch and switch in this process, but the first silicon wafer stage 5 directly moves to the exposure station from the pre-service station, and meanwhile the second silicon wafer stage 6 directly moves to the pre-service station from the exposure station.Wherein, control the first moving guide rail 3 and the second moving guide rail 4 along being parallel to X-direction and along the displacement that is parallel to Y-direction, making the first silicon wafer stage 5 and the second silicon wafer stage 6 switches and when switch, mutually dodge not occur to touch.
Below, further describe the exchange process of the first silicon wafer stage 5 and the second silicon wafer stage 6.
Extremely shown in Figure 4 such as Fig. 2, during initialization state in Fig. 2, the first silicon wafer stage 5 that is in pre-service station 11 is coupled in the end of the first moving guide rail 3, because the first moving guide rail 3 can be parallel to the X-direction slippage in relative the first guide surface 1 edge, and the first moving guide rail 3 self can stretch along being parallel to Y-direction by relative the first guide surface 1 again, the first silicon wafer stage 5 that then is positioned at pre-service station 11 is wanted to move to when exposing station 22, the first moving guide rail 3 can the X forward moves and the first moving guide rail 3 relative the first guide surfaces 1 edge is parallel to the indentation of Y forward along being parallel to relative to the first guide surface 1 first, and namely the first moving guide rail 3 is along being parallel to 1 indentation of relative the first guide surface of Y-direction with more close the first guide surface 1; And the second silicon wafer stage 6 that is in exposure station 22 is when wanting to move to pre-service station 11, be coupled with the second silicon wafer stage 6 the second moving guide rail 4 can relative to the second guide surface 2 along be parallel to that the X negative sense moves and the second moving guide rail 4 relative the second guide surfaces 2 along being parallel to the indentation of Y negative sense, namely the second moving guide rail 4 is along being parallel to 2 indentations of relative the second guide surface of Y-direction with more close the second guide surface 2, the first silicon wafer stage 5 and the second silicon wafer stage 6 enter the process of mutually dodging shown in Figure 3 afterwards, wherein, by controlling the first moving guide rail 3 and the second moving guide rail 4 separately along being parallel to X-direction and along being parallel to the displacement of Y-direction, the first silicon wafer stage 5 and the second silicon wafer stage 6 are dodged in exchange process mutually not to be occured to touch, afterwards, the first moving guide rail band 3 moving the first silicon wafer stages 5 continue to move until the first silicon wafer stage 5 arrives the X coordinate points of exposure station 22 along the first guide surface 1 towards the forward that is parallel to X, the second moving guide rail 4 drives that the second silicon wafer stage 6 continues to move along the second guide surface 2 towards the negative sense that is parallel to X until the second silicon wafer stage 6 when arriving the X coordinate points of pre-service stations 11, the first moving guide rail 3 relative the first guide surfaces 1 that are connected with afterwards the first silicon wafer stage 5 stretch out and make the first silicon wafer stage 5 away from the first guide surface 1, thereby make the first silicon wafer stage 5 arrive the Y coordinate points of exposure station 22; The second moving guide rail 4 relative the second guide surfaces 2 that are connected with afterwards the second silicon wafer stage 6 stretch out and make the second silicon wafer stage 6 away from the second guide surface 2, thereby make the second silicon wafer stage 6 arrive the Y coordinate points of pre-service station 11, it is final so that the first silicon wafer stage 5 and the second silicon wafer stage 6 switches arrive respectively exposure station 22 and pre-service station 11 separately.Like this, the first silicon wafer stage 5 and the second silicon wafer stage 6 are mobile simultaneously in the exchange system, can not produce as switching and consume the suitable time because two silicon wafer stages are trapped in a switch in the prior art, have improved production efficiency.
It should be understood that described above is a kind of preferred exchange process.In other embodiments, different exchange process can be set.
For example, can exchange in the following order: the first moving guide rail 3 drives the first silicon wafer stage 5 and then moves along being parallel to the Y negative sense along being parallel to the X forward along being parallel to the Y forward first again, and then meanwhile the second moving guide rail 4 drives the second silicon wafer stage 6 moves along being parallel to the Y forward along being parallel to the X negative sense along being parallel to the Y negative sense first again.
In addition, in the present embodiment, the first silicon wafer stage 5 and the second silicon wafer stage 6 are the ends that are fixed in respectively the first moving guide rail 3 and the second moving guide rail 4; Also can be fixed in respectively in the zone that the end of the first moving guide rail 3 and the second moving guide rail 4 has.In a word, the first silicon wafer stage 5 be connected silicon wafer stage 6 and can be connected to the first moving guide rail 3 and be connected moving guide rail 4 and relatively connecting the opposite side zone of the first guide surface and the second guide surface.
In addition, in other examples of implementation, but the first silicon wafer stage 5 and the second silicon wafer stage 6 self done respectively the movement of certain distance along the first moving guide rail 3 and the second moving guide rail 4, be not to some extent restriction at this.
Described in this instructions is preferred specific embodiment of the present invention, and above embodiment is only in order to illustrate technical scheme of the present invention but not limitation of the present invention.All those skilled in the art all should be within the scope of the present invention that defines such as claim under this invention's idea by the available technical scheme of logical analysis, reasoning, or a limited experiment.
Claims (2)
1. a photo-etching machine silicon slice bench double-bench switching system is characterized in that, comprising:
Along the first guide surface and the second guide surface that are parallel to the X-direction setting; With
Along the first moving guide rail and the second moving guide rail that are parallel to the Y-direction setting, described the first moving guide rail be slidingly connected to described the first guide surface to move along being parallel to X-direction, and described the first moving guide rail is flexible along being parallel to Y-direction with respect to described first guide surface of its connection, and described the second moving guide rail be slidingly connected to described the second guide surface moving along being parallel to X-direction, and described the second moving guide rail is flexible along being parallel to Y-direction with respect to described second guide surface of its connection;
Wherein, the first silicon wafer stage be connected silicon wafer stage and be coupled to respectively described the first moving guide rail and be connected the second moving guide rail and relatively connecting the opposite side zone of the first guide surface and the second guide surface; Wherein,
Control described the first moving guide rail and described the second moving guide rail along being parallel to X-direction and along the displacement that is parallel to Y-direction, making described the first silicon wafer stage and described the second silicon wafer stage switch and when switch, mutually dodge not occur to touch;
Wherein, described the first moving guide rail drives that the first silicon wafer stage moves along the first guide surface towards the forward that is parallel to X first and when relative the first guide surface indentation of the first moving guide rail, the second moving guide rail drives the second silicon wafer stage and moves and relative the second guide surface indentation of the second moving guide rail towards the negative sense that is parallel to X along the second guide surface first, until the first silicon wafer stage and the second silicon wafer stage are dodged mutually, afterwards, the first moving guide rail drives when the continuation of the first silicon wafer stage is moved along the first guide surface towards the forward that is parallel to X and relative the first guide surface of the first moving guide rail stretches out afterwards, the second moving guide rail drive that the second silicon wafer stage continues to move along the second guide surface towards the negative sense that is parallel to X and afterwards relative the second guide surface of the second moving guide rail stretch out, until the first silicon wafer stage and the second silicon wafer stage move to the position at the original place of the other side mutually.
2. photo-etching machine silicon slice bench double-bench switching system as claimed in claim 1 is characterized in that, described the first silicon wafer stage and described the second silicon wafer stage are fixed in respectively the end of described the first moving guide rail and described the second moving guide rail.
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| CN 201010118297 CN102193319B (en) | 2010-03-05 | 2010-03-05 | Double-platform exchange system for wafer stage of photoetching machine |
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| CN 201010118297 CN102193319B (en) | 2010-03-05 | 2010-03-05 | Double-platform exchange system for wafer stage of photoetching machine |
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| CN102193319A CN102193319A (en) | 2011-09-21 |
| CN102193319B true CN102193319B (en) | 2013-01-16 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104950597B (en) * | 2015-07-07 | 2017-05-24 | 合肥芯硕半导体有限公司 | Standard double-workpiece-table device |
| CN105425550A (en) * | 2016-01-14 | 2016-03-23 | 哈尔滨工业大学 | Moving coil gas-magnetism combined air-suspension double-workpiece-stage vector circular-arc exchange method and device based on staggered magnetic steel arrangement |
| TWI596449B (en) * | 2016-05-30 | 2017-08-21 | 志聖工業股份有限公司 | Method for light exposing workpiece, exposure apparatus, and placement mechanism of exposure apparatus |
| CN116081295B (en) * | 2023-04-11 | 2023-07-04 | 拉普拉斯(无锡)半导体科技有限公司 | Inserting and taking sheet mechanism |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6842248B1 (en) * | 2000-11-28 | 2005-01-11 | Nikon Corporation | System and method for calibrating mirrors of a stage assembly |
| CN2938172Y (en) * | 2006-07-18 | 2007-08-22 | 上海微电子装备有限公司 | Exposure precision positioning system of changed by two-device |
| CN101526747A (en) * | 2009-01-07 | 2009-09-09 | 上海微电子装备有限公司 | Double workpiece platform device |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP3919782B2 (en) * | 2004-10-08 | 2007-05-30 | キヤノン株式会社 | Exposure apparatus and device manufacturing method |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6842248B1 (en) * | 2000-11-28 | 2005-01-11 | Nikon Corporation | System and method for calibrating mirrors of a stage assembly |
| CN2938172Y (en) * | 2006-07-18 | 2007-08-22 | 上海微电子装备有限公司 | Exposure precision positioning system of changed by two-device |
| CN101526747A (en) * | 2009-01-07 | 2009-09-09 | 上海微电子装备有限公司 | Double workpiece platform device |
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| Title |
|---|
| JP特开2006-108581A 2006.04.20 |
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Address after: 201203 1525 Zhang Dong Road, Zhangjiang hi tech park, Pudong District, Shanghai Patentee after: Shanghai microelectronics equipment (Group) Limited by Share Ltd Address before: 201203 1525 Zhang Dong Road, Zhangjiang hi tech park, Pudong District, Shanghai Patentee before: Shanghai Micro Electronics Equipment Co., Ltd. |
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