CN102181825B - 籽晶层辅助的高性能TiO2基透明导电薄膜及制备方法 - Google Patents
籽晶层辅助的高性能TiO2基透明导电薄膜及制备方法 Download PDFInfo
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- CN102181825B CN102181825B CN 201110058098 CN201110058098A CN102181825B CN 102181825 B CN102181825 B CN 102181825B CN 201110058098 CN201110058098 CN 201110058098 CN 201110058098 A CN201110058098 A CN 201110058098A CN 102181825 B CN102181825 B CN 102181825B
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 16
- 229910052715 tantalum Inorganic materials 0.000 claims abstract description 16
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- 238000003980 solgel method Methods 0.000 claims description 19
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- WGLPBDUCMAPZCE-UHFFFAOYSA-N chromium trioxide Inorganic materials O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 1
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- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(IV) oxide Inorganic materials O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 1
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- 229910052739 hydrogen Inorganic materials 0.000 description 1
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- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
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- 229910052718 tin Inorganic materials 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910021512 zirconium (IV) hydroxide Inorganic materials 0.000 description 1
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CN103566915B (zh) * | 2013-11-06 | 2015-05-20 | 浙江大学 | 一种在不锈钢丝网表面生长TiO2纳米线薄膜的方法 |
CN106637273B (zh) * | 2015-10-30 | 2018-12-18 | 同济大学 | 碳层包覆铬掺杂钛酸锶/二氧化钛纳米管光电极及制备与应用 |
CN105895807B (zh) * | 2016-05-06 | 2018-11-16 | 郑州大学 | 一种掺杂TiO2薄膜的制备方法 |
CN105951053B (zh) * | 2016-05-20 | 2018-06-19 | 郑州大学 | 一种铌掺杂二氧化钛透明导电膜的制备方法及铌掺杂二氧化钛透明导电膜 |
CN105957718A (zh) * | 2016-06-28 | 2016-09-21 | 郑州大学 | 一种金属离子掺杂的TiO2光阳极的制备方法 |
WO2018095834A1 (en) * | 2016-11-22 | 2018-05-31 | Merck Patent Gmbh | Additive for laser-markable and laser-weldable polymer materials |
CN107705873B (zh) * | 2017-07-31 | 2019-04-16 | 北京大学深圳研究生院 | 一种透明导电玻璃及其制备方法和应用 |
CN107245702A (zh) * | 2017-08-15 | 2017-10-13 | 苏州南尔材料科技有限公司 | 一种采用沉积法制备氧化钛薄膜的方法 |
CN108103466A (zh) * | 2017-12-21 | 2018-06-01 | 君泰创新(北京)科技有限公司 | 高迁移率透明导电氧化物薄膜的制备方法 |
CN114775043B (zh) * | 2022-04-20 | 2024-06-25 | 中国科学院半导体研究所 | 提高薄膜厚度均匀性的制备方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100691585B1 (ko) * | 2005-12-16 | 2007-03-12 | (재)대구경북과학기술연구원 | 가시광에 감응하는 백금이온이 도핑된 이산화티탄 광촉매의제조 방법 |
CN101130161A (zh) * | 2007-09-18 | 2008-02-27 | 攀钢集团攀枝花钢铁研究院 | 掺杂金属离子的纳米二氧化钛及其制备方法 |
CN101188157A (zh) * | 2007-12-14 | 2008-05-28 | 华中科技大学 | 一种钒掺杂氧化钛纳米稀磁半导体及其制备方法 |
CN101211764A (zh) * | 2006-12-26 | 2008-07-02 | 北京大学 | 一种铬掺杂二氧化钛室温铁磁薄膜的制备方法 |
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100691585B1 (ko) * | 2005-12-16 | 2007-03-12 | (재)대구경북과학기술연구원 | 가시광에 감응하는 백금이온이 도핑된 이산화티탄 광촉매의제조 방법 |
CN101211764A (zh) * | 2006-12-26 | 2008-07-02 | 北京大学 | 一种铬掺杂二氧化钛室温铁磁薄膜的制备方法 |
CN101130161A (zh) * | 2007-09-18 | 2008-02-27 | 攀钢集团攀枝花钢铁研究院 | 掺杂金属离子的纳米二氧化钛及其制备方法 |
CN101188157A (zh) * | 2007-12-14 | 2008-05-28 | 华中科技大学 | 一种钒掺杂氧化钛纳米稀磁半导体及其制备方法 |
Non-Patent Citations (1)
Title |
---|
Naoomi Yamada et.al..Direct growth of transparent conducting Nb-doped anatase TiO2 polycrystalline films on glass.《J. Appl. Phys.》.2009,第105卷全文. * |
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