CN102176464A - SiGe heterojunction bipolar device and preparation method thereof - Google Patents
SiGe heterojunction bipolar device and preparation method thereof Download PDFInfo
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- CN102176464A CN102176464A CN201110076571XA CN201110076571A CN102176464A CN 102176464 A CN102176464 A CN 102176464A CN 201110076571X A CN201110076571X A CN 201110076571XA CN 201110076571 A CN201110076571 A CN 201110076571A CN 102176464 A CN102176464 A CN 102176464A
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Abstract
The invention provides a SiGe heterojunction bipolar device comprising a semiconductor substrate, an N region, a P-well region, collector regions, shallow trough isolators, an SiGe layer and an emitter region, wherein the N region and the P-well region are formed inside a surface layer at the upper end of the semiconductor substrate at an interval, and the upper end of the P-well region is subjected to heavy p-type ion doping; the collector regions are formed at two ends of the N region by means of heavy n-type ion doping; the shallow trough isolators are formed inside the semiconductor substrate at intervals and between the collector regions and the P-well region; the SiGe layer is formed on the upper surface of the N region; and the emitter region is formed on the surface of the SiGe layer. In the invention, by forming the N region and the P-well region on the surface layer of the upper end of the semiconductor substrate at an interval and forming the collector regions at the two ends of the N region through heavy n-type ion doping, electrons diffuse transversely, an electron transmission path is shortened, the resistance of a collector electrode is further reduced, and the breakdown voltage is improved. Meanwhile, for the manufacturing process of the SiGe heterojunction bipolar device, high-energy ion implantation is decreased, a production process is optimized, and the device preparation efficiency is improved.
Description
Technical field
The present invention relates to semiconductor device and preparation method thereof, relate in particular to a kind of SiGe heterojunction bipolar device and preparation method thereof.
Background technology
The heterojunction bipolar device is one of research emphasis of present SiGe device.SiGe heterojunction bipolar device performance optimization depends in designs and in making, gives full play to the advantage of " doping engineering " and " energy band engineering ".In the SiGe heterojunction device, the band gap of base material is less than the emitter region, so doped region needn't heavy doping, and the base then can heavy doping, and base resistance is little like this, noise is low, injection efficiency is high, can reduce tunnel effect, punchthrough effect and the electric capacity of emitter junction.It is very thin that the base can also be done, and can shorten Base Transit Time, improves response frequency.The development of SiGe heterojunction bipolar device makes bipolar device and bipolar integrated circuit have breakthrough and improve in the performance of aspects such as numeral, simulation, microwave, low temperature and application.
See also Fig. 1, Figure 1 shows that the structural representation of traditional Si Ge heterojunction bipolar transistor 1.Described SiGe heterojunction bipolar transistor 1 comprises: first substrate 10, be formed on a N trap buried regions 11 in first substrate 10 by the high energy ion injection mode, extend to the N well region 12 in the N trap buried regions 11 from first substrate, 10 surfaces, to carry out first shallow trench isolation of electrical isolation from 14 between some N well regions 12 or between a N well region 12 and the P well region 13, at a SiGe layer 15 of first substrate, 10 surperficial epitaxial growths formation, and first emitter region 16 that on a described SiGe layer 15, forms.
Wherein, described first substrate 10 is a p type substrate.Carry out the heavy doping of n type ion to form first collector region 17 in a described N well region 12 upper ends.Simultaneously carry out the heavy doping of p type ion in a described P well region 13 upper ends.A described SiGe layer 15 forms in a N well region 12 surperficial epitaxial growths of first substrate 10, and a described SiGe layer 15 epitaxial growth coverage are between first collector region 17.Described first shallow trench isolation is about 5 μ m from 14 the degree of depth.
Significantly, the vertical stratification of described traditional Si Ge heterojunction bipolar transistor 1 makes the electric transmission path increase, and then causes collector resistance too high, and puncture voltage is limited simultaneously, seriously influences the effect of device; On the other hand, being formed on N trap buried regions 11 in first substrate 10 needs the mode that adopts high energy ions to inject, makes complex procedures.
At the problem that prior art exists, this case designer relies on the industry experience for many years of being engaged in, and the active research improvement is so there has been SiGe heterojunction bipolar device of the present invention and preparation method thereof.
Summary of the invention
The present invention be directed in the prior art, the collector resistance that vertical stratification causes of existing SiGe heterojunction bipolar transistor is too high, and puncture voltage is limited, and defective such as complex process, provide a kind of low resistance, the SiGe heterojunction bipolar device of high-breakdown-voltage.
Another purpose of the present invention is in the prior art, and existing SiGe heterojunction bipolar transistor needs high-octane ion to inject, and defectives such as complex process provide a kind of SiGe heterojunction bipolar preparation of devices method.
In order to address the above problem, the invention provides a kind of SiGe heterojunction bipolar device, described SiGe heterojunction bipolar device comprises: Semiconductor substrate, described Semiconductor substrate are p type substrate; N district and P well region are formed in the top layer, described Semiconductor substrate upper end at interval, and the heavy doping of p type ion is carried out in described P well region upper end; Collector region, described collector region is formed on two ends, described N district by the heavy doping of n type ion; Shallow trench isolation from, described shallow trench isolating partition is formed in the described Semiconductor substrate, and between collector region and P well region; The SiGe layer is formed on N district upper surface; The emitter region is formed on described SiGe laminar surface.Wherein, the scope that covers in the upper surface epitaxial growth of N district of described SiGe floor is between collector region.The mode that described N district implants by ion prepares.Described shallow trench isolation from the degree of depth be 5 μ m.
For solving another purpose of the present invention, the invention provides a kind of SiGe heterojunction bipolar preparation of devices method, described SiGe heterojunction bipolar preparation of devices method comprises:
Semiconductor substrate is provided;
Shallow trench isolation from preparation;
The preparation of N district and P well region, the heavy doping of p type ion is carried out in described P well region upper end;
The preparation of collector region;
The preparation of SiGe layer, described SiGe layer adopt the epitaxial growth mode to form;
The preparation of emitter region.
Wherein, the mode implanted by ion of described N district prepares.Described collector region is to form by carry out the heavy doping of n type ion at two ends, N district.
In sum, the present invention forms N district and P well region at interval by the top layer, upper end in Semiconductor substrate, and carries out the heavy doping of n type ion to form collector region at two ends, described N district, make electronics carry out horizontal proliferation, shorten the electric transmission path, and then reduce collector resistance, and improve puncture voltage.Simultaneously, described SiGe heterojunction bipolar device has reduced the high energy ion injection on manufacturing process, optimizes production technology, improves the device preparation efficiency.
Description of drawings
Fig. 1 is the structural representation of traditional SiGe heterojunction bipolar transistor;
Fig. 2 is the structural representation of SiGe heterojunction bipolar device of the present invention;
Fig. 3 is a SiGe heterojunction bipolar preparation of devices flow chart of the present invention.
Embodiment
By the technology contents, the structural feature that describe the invention in detail, reached purpose and effect, described in detail below in conjunction with embodiment and conjunction with figs..
See also Fig. 2, Figure 2 shows that the structural representation of SiGe heterojunction bipolar device 2.Described SiGe heterojunction bipolar device 2 comprises second substrate 20, be formed on the 2nd N district 21 and the 2nd P well region 22 in the top layer, second substrate, 20 upper end at interval, be formed between the 2nd N district 21 and the 2nd P well region 22 and electrify air bound from the effect second shallow trench isolation from 23, be close to second shallow trench isolation at 21 two ends, described the 2nd N district and carry out second collector region 24 that the heavy doping of n type ion forms from 23 places, at the 2nd SiGe floor 25 of the 2nd N district 21 surperficial epitaxial growths formation, and second emitter region 26 that on the 2nd SiGe layer 25, forms.
Wherein, described second substrate 20 is a p type substrate.Described the 2nd N district 21 adopts n type ion implantation mode to form.The scope that described the 2nd SiGe floor 25 covers in epitaxial growth in the 2nd N district 21 is between second collector region 24.Carry out the heavy doping of p type ion on top layer, described the 2nd P well region 22 upper end.
See also Fig. 3, Figure 3 shows that the preparation flow figure of SiGe heterojunction bipolar device 2.The preparation of described SiGe heterojunction bipolar device 2 comprises:
Execution in step S1: second substrate 20 is provided.Described second substrate 20 is a p N-type semiconductor N substrate.
Execution in step S2: second shallow trench isolation is from 23 preparation.Described second shallow trench isolation is about 5 μ m from 23 the degree of depth.
Execution in step S3: between 23, form the 2nd N district 21 and the 2nd P well region 22 at interval at described second shallow trench isolation.Wherein, carry out the heavy doping of p type ion in described the 2nd P well region 22 upper ends.
Execution in step S4: be close to second shallow trench isolation at 21 two ends, described the 2nd N district and carry out the heavy doping of n type ion from 23 places to form second collector region 24.
Execution in step S5: prepare the 2nd SiGe layer 25.Form the 2nd SiGe floor 25 by epitaxially grown mode on 21 top layers, the 2nd N district.Wherein, the scope that covers in epitaxial growth in the 2nd N district 21 of described the 2nd SiGe floor 25 is between second collector region 24.
Execution in step S6: the preparation of second emitter region 26.Described second emitter region 26 is positioned on described the 2nd SiGe layer 25.
In sum, the present invention forms the 2nd N district 21 and the 2nd P well region 22 at interval by the top layer, upper end at second substrate 20, and carry out the heavy doping of n type ion to form second collector region 24 at 21 two ends, described the 2nd N district, make electronics carry out horizontal proliferation, shorten the electric transmission path, and then reduce collector resistance, and improve puncture voltage.Simultaneously, described SiGe heterojunction bipolar device 2 has reduced the high energy ion injection on manufacturing process, optimizes production technology, improves the device preparation efficiency.
Those skilled in the art all should be appreciated that, under the situation that does not break away from the spirit or scope of the present invention, can carry out various modifications and variations to the present invention.Thereby, if when any modification or modification fall in the protection range of appended claims and equivalent, think that the present invention contains these modifications and modification.
Claims (7)
1. SiGe heterojunction bipolar device, it is characterized in that: described device comprises:
Semiconductor substrate, described Semiconductor substrate are p type substrate;
N district and P well region are formed in the top layer, described Semiconductor substrate upper end at interval, and the heavy doping of p type ion is carried out in described P well region upper end;
Collector region, described collector region is formed on two ends, described N district by the heavy doping of n type ion;
Shallow trench isolation from, described shallow trench isolating partition is formed in the described Semiconductor substrate, and between collector region and P well region;
The SiGe layer is formed on N district upper surface;
The emitter region is formed on described SiGe laminar surface.
2. SiGe heterojunction bipolar device as claimed in claim 1 is characterized in that, the scope that described SiGe floor covers in the upper surface epitaxial growth of N district is between collector region.
3. SiGe heterojunction bipolar device as claimed in claim 1 is characterized in that, the mode that described N district implants by ion prepares.
4. SiGe heterojunction bipolar device as claimed in claim 1 is characterized in that, described shallow trench isolation from the degree of depth be 5 μ m.
5. SiGe heterojunction bipolar preparation of devices method as claimed in claim 1 is characterized in that described method comprises:
Semiconductor substrate is provided;
Shallow trench isolation from preparation;
The preparation of N district and P well region, the heavy doping of p type ion is carried out in described P well region upper end;
The preparation of collector region;
The preparation of SiGe layer, described SiGe layer adopt the epitaxial growth mode to form;
The preparation of emitter region.
6. SiGe heterojunction bipolar preparation of devices method as claimed in claim 5 is characterized in that, the mode that described N district implants by ion prepares.
7. SiGe heterojunction bipolar preparation of devices method as claimed in claim 5 is characterized in that, described collector region is to form by carry out the heavy doping of n type ion at two ends, N district.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| USD922126S1 (en) | 2019-06-06 | 2021-06-15 | Sharkninja Operating Llc | User interface for a food preparation device |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03209833A (en) * | 1989-12-01 | 1991-09-12 | Hewlett Packard Co <Hp> | Si/sige heterogeneous junction bipolar transistor using advanced epitaxial piling technic and its manufacture |
| CN101599435A (en) * | 2009-07-24 | 2009-12-09 | 上海宏力半导体制造有限公司 | The doping method of single-layer polycrystalline silicon HBT extrinsic base region |
| CN101937846A (en) * | 2010-09-10 | 2011-01-05 | 上海宏力半导体制造有限公司 | SiGe HBT (Heterostructure Bipolar Transistor) and manufacture method thereof |
-
2011
- 2011-03-29 CN CN201110076571.XA patent/CN102176464B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03209833A (en) * | 1989-12-01 | 1991-09-12 | Hewlett Packard Co <Hp> | Si/sige heterogeneous junction bipolar transistor using advanced epitaxial piling technic and its manufacture |
| CN101599435A (en) * | 2009-07-24 | 2009-12-09 | 上海宏力半导体制造有限公司 | The doping method of single-layer polycrystalline silicon HBT extrinsic base region |
| CN101937846A (en) * | 2010-09-10 | 2011-01-05 | 上海宏力半导体制造有限公司 | SiGe HBT (Heterostructure Bipolar Transistor) and manufacture method thereof |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| USD922126S1 (en) | 2019-06-06 | 2021-06-15 | Sharkninja Operating Llc | User interface for a food preparation device |
| USD982375S1 (en) | 2019-06-06 | 2023-04-04 | Sharkninja Operating Llc | Food preparation device |
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