CN102175328A - Double-channel pyroelectric infrared sensor - Google Patents
Double-channel pyroelectric infrared sensor Download PDFInfo
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- CN102175328A CN102175328A CN2010106108702A CN201010610870A CN102175328A CN 102175328 A CN102175328 A CN 102175328A CN 2010106108702 A CN2010106108702 A CN 2010106108702A CN 201010610870 A CN201010610870 A CN 201010610870A CN 102175328 A CN102175328 A CN 102175328A
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- circuit board
- layer circuit
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- pipe cap
- infrared
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Abstract
The invention provides a double-channel pyroelectric infrared sensor which comprises a pipe cap, a window arranged at the head end of the pipe cap, an infrared filter arranged inside the pipe cap, a pipe base arranged at the tail end of the pipe cap, a pipe pin penetrating through the pipe base and a sensor circuit connected to the pipe pin, wherein the sensor circuit comprises two groups of infrared sensitive elements and two field effect transistors; an upper layer circuit board and a lower layer circuit board are arranged in the pipe cap; the upper layer circuit board and the lower layer circuit board are respectively arranged on the pipe pin; the sensor circuit is arranged on the upper layer circuit board and the lower layer circuit board; the two groups of infrared sensitive elements are arranged on the upper side of the upper layer circuit board; and the two field effect transistors are arranged on the upper side of the lower layer circuit board. The double-channel pyroelectric infrared sensor has the advantages of small volume, simplicity in manufacturing, low production cost, high production efficiency and wide application range.
Description
Technical field
The present invention relates to a kind of infrared gas sensor, specifically, relate to a kind of binary channels pyroelectric infrared sensor.
Background technology
Existing binary channels pyroelectric infrared sensor adopts the field effect transistor wafer directly to bind technology mostly and makes, and owing to very high to production technology and production environment requirement, causes the production cost height of binary channels pyroelectric infrared sensor; Existing binary channels pyroelectric infrared sensor adopts packaged field-effect tube to make in addition, though this mode cost is lower, but because the field effect transistor volume that encapsulated is big, the binary channels pyroelectric infrared sensor volume that causes making increases, and has limited the usable range of sensor itself.
For this reason, people are seeking a kind of desirable technical solution always.
Summary of the invention
The present invention is directed to the deficiencies in the prior art, the binary channels pyroelectric infrared sensor that a kind of volume is small and exquisite, making is simple, production cost is low, production efficiency is high, usable range is wide is provided.
The technical solution adopted in the present invention is as follows: a kind of binary channels pyroelectric infrared sensor, it includes pipe cap, be arranged on the window of pipe cap head end, be arranged on the infrared fileter of pipe cap inboard, be installed in the base of pipe cap end, pass pin and the sensor circuit that is connected pin that base is provided with, described sensor circuit includes two groups of infrared-sensitive units and two field effect transistor, in described pipe cap, be provided with layer circuit board and lower circuit plate, described upward layer circuit board and described lower circuit plate are separately positioned on the described pin, described sensor circuit is arranged on described going up on layer circuit board and the described lower circuit plate, wherein, two groups of infrared-sensitive units are arranged on the described layer circuit board upside of going up, and two field effect transistor are arranged on described lower circuit plate upside.
Based on above-mentioned, two field effect transistor are supported on described going up between layer circuit board and the described lower circuit plate.
Based on above-mentioned, two groups of infrared-sensitive units and two field effect transistor adopt SMT automatic chip mounting technology to be attached to described going up on layer circuit board and the described lower circuit plate respectively.
The relative prior art of the present invention has outstanding substantive distinguishing features and marked improvement, specifically, this sensor is by the odt circuit plate structure, make full use of narrow space, do not increased sensor bulk and reducing under the prerequisite of field effect transistor volume, realized the binary channels pyroelectric sensor preparation of smaller size smaller, simultaneously, the odt circuit plate structure of this sensor can also realize SMT automatic chip mounting technology, has significantly improved the make efficiency of sensor, has reduced production cost;
The two point supporting role of two field effect transistor has guaranteed the level of last layer circuit board, and then has guaranteed the visual angle consistance of two groups of infrared-sensitive units, is beneficial to the detection performance that improves sensor;
The odt circuit plate structure of this sensor, the distance of furthered infrared-sensitive unit and window, the position of promptly having raised infrared-sensitive unit has enlarged the visual angle of sensor, can improve the detection performance of sensor greatly;
This binary channels pyroelectric infrared sensor has the advantage that volume is small and exquisite, making is simple, production cost is low, production efficiency is high, usable range is wide.
Description of drawings
Fig. 1 is a structural representation of the present invention.
Embodiment
Below by embodiment, technical scheme of the present invention is described in further detail.
As shown in Figure 1, a kind of binary channels pyroelectric infrared sensor, it includes pipe cap 7, be arranged on the window of pipe cap 7 head ends, be arranged on pipe cap 7 inboards infrared fileter 6, be installed in pipe cap 7 ends base 1, pass pin two that base 1 is provided with, connect the sensor circuit of pin two and be arranged on last layer circuit board 4 and lower circuit plate 8 in the pipe cap 7;
Described upward layer circuit board 4 and described lower circuit plate 8 are separately positioned on the described pin two, described sensor circuit is printed on described going up on layer circuit board 4 and the described lower circuit plate 8, and promptly described upward layer circuit board 4 and described lower circuit plate 8 are realized the location by the pin two on the base 1;
Described sensor circuit includes 5 and two field effect transistor 3 of two groups of infrared-sensitive units, wherein, two groups of infrared-sensitive units 5 are arranged on described layer circuit board 4 upsides of going up, two field effect transistor 3 are arranged on described lower circuit plate 8 upsides, and two groups of infrared-sensitive units 5 realize being connected with the electricity of sensor circuit with the P.e.c. on the lower circuit plate 8 by last layer circuit board 4 with two field effect transistor 3;
Two groups of infrared-sensitive units 5 are provided with near infrared fileter 6.
Based on above-mentioned, two field effect transistor 3 are supported on described going up between layer circuit board 4 and the described lower circuit plate 8, and described lower circuit plate 8 is installed on the described base 1.
Based on above-mentioned, 5 and two field effect transistor 3 of two groups of infrared-sensitive units adopt SMT automatic chip mounting technology to be attached to described going up on layer circuit board 4 and the described lower circuit plate 8 respectively.
Should be noted that at last: above embodiment is only in order to illustrate that technical scheme of the present invention is not intended to limit; Although with reference to preferred embodiment the present invention is had been described in detail, those of ordinary skill in the field are to be understood that: still can make amendment or the part technical characterictic is equal to replacement the specific embodiment of the present invention; And not breaking away from the spirit of technical solution of the present invention, it all should be encompassed in the middle of the technical scheme scope that the present invention asks for protection.
Claims (3)
1. binary channels pyroelectric infrared sensor, include pipe cap, be arranged on the window of pipe cap head end, be arranged on the infrared fileter of pipe cap inboard, be installed in the base of pipe cap end, pass pin and the sensor circuit that is connected pin that base is provided with, described sensor circuit includes two groups of infrared-sensitive units and two field effect transistor, it is characterized in that: in described pipe cap, be provided with layer circuit board and lower circuit plate, described upward layer circuit board and described lower circuit plate are separately positioned on the described pin, described sensor circuit is arranged on described going up on layer circuit board and the described lower circuit plate, wherein, two groups of infrared-sensitive units are arranged on the described layer circuit board upside of going up, and two field effect transistor are arranged on described lower circuit plate upside.
2. binary channels pyroelectric infrared sensor according to claim 1 is characterized in that: two field effect transistor are supported on described going up between layer circuit board and the described lower circuit plate.
3. binary channels pyroelectric infrared sensor according to claim 1 and 2 is characterized in that: two groups of infrared-sensitive units and two field effect transistor adopt SMT automatic chip mounting technology to be attached to described going up on layer circuit board and the described lower circuit plate respectively.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010610870.2A CN102175328B (en) | 2010-12-29 | 2010-12-29 | Double-channel pyroelectric infrared sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010610870.2A CN102175328B (en) | 2010-12-29 | 2010-12-29 | Double-channel pyroelectric infrared sensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102175328A true CN102175328A (en) | 2011-09-07 |
| CN102175328B CN102175328B (en) | 2014-03-26 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201010610870.2A Active CN102175328B (en) | 2010-12-29 | 2010-12-29 | Double-channel pyroelectric infrared sensor |
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| CN (1) | CN102175328B (en) |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4851682A (en) * | 1987-03-20 | 1989-07-25 | Kureha Kagaku Kogyo Kabushiki Kaisha | Pyroelectric infrared sensor |
| JPH116761A (en) * | 1997-06-16 | 1999-01-12 | Matsushita Electric Ind Co Ltd | Pyroelectric infrared ray sensor |
| CN2446517Y (en) * | 2000-09-14 | 2001-09-05 | 上海尼赛拉传感器有限公司 | Miniature pyroelectric infrared sensor |
| CN2447940Y (en) * | 2000-09-22 | 2001-09-12 | 黄伟鹏 | Infra-red integrated receiving head |
| JP2003149046A (en) * | 2001-11-12 | 2003-05-21 | Fujimaru Kogyo Kk | Pyroelectric sensor |
| CN2754212Y (en) * | 2004-12-24 | 2006-01-25 | 上海尼赛拉传感器有限公司 | Pyroelectric infrared sensor |
| CN201935736U (en) * | 2010-12-29 | 2011-08-17 | 郑州炜盛电子科技有限公司 | Dual-channel pyroelectric infrared sensor |
-
2010
- 2010-12-29 CN CN201010610870.2A patent/CN102175328B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4851682A (en) * | 1987-03-20 | 1989-07-25 | Kureha Kagaku Kogyo Kabushiki Kaisha | Pyroelectric infrared sensor |
| JPH116761A (en) * | 1997-06-16 | 1999-01-12 | Matsushita Electric Ind Co Ltd | Pyroelectric infrared ray sensor |
| CN2446517Y (en) * | 2000-09-14 | 2001-09-05 | 上海尼赛拉传感器有限公司 | Miniature pyroelectric infrared sensor |
| CN2447940Y (en) * | 2000-09-22 | 2001-09-12 | 黄伟鹏 | Infra-red integrated receiving head |
| JP2003149046A (en) * | 2001-11-12 | 2003-05-21 | Fujimaru Kogyo Kk | Pyroelectric sensor |
| CN2754212Y (en) * | 2004-12-24 | 2006-01-25 | 上海尼赛拉传感器有限公司 | Pyroelectric infrared sensor |
| CN201935736U (en) * | 2010-12-29 | 2011-08-17 | 郑州炜盛电子科技有限公司 | Dual-channel pyroelectric infrared sensor |
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| Publication number | Publication date |
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| CN102175328B (en) | 2014-03-26 |
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Inventor after: Zhang Xiaoshui Inventor after: Jin Guixin Inventor after: Zhao Jinling Inventor after: Zhong Kechuang Inventor after: Qi Mingfeng Inventor after: Fan Ziliang Inventor before: Zhang Xiaoshui Inventor before: Zhong Kechuang Inventor before: Qi Mingfeng Inventor before: Fan Ziliang |
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Free format text: CORRECT: INVENTOR; FROM: ZHANG XIAOSHUI ZHONG KECHUANG QI MINGFENG FAN ZILIANG TO: ZHANG XIAOSHUI JIN GUIXIN ZHAO JINLING ZHONG KECHUANG QI MINGFENG FAN ZILIANG |
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