CN102168313B - 一种碲锌镉晶体的气相退火改性方法 - Google Patents
一种碲锌镉晶体的气相退火改性方法 Download PDFInfo
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- CN102168313B CN102168313B CN201110067191XA CN201110067191A CN102168313B CN 102168313 B CN102168313 B CN 102168313B CN 201110067191X A CN201110067191X A CN 201110067191XA CN 201110067191 A CN201110067191 A CN 201110067191A CN 102168313 B CN102168313 B CN 102168313B
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- annealing
- silica tube
- crystal
- wafer
- gas phase
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- 238000000137 annealing Methods 0.000 title claims abstract description 70
- 239000011701 zinc Substances 0.000 title claims abstract description 45
- 239000013078 crystal Substances 0.000 title claims abstract description 40
- 229910052793 cadmium Inorganic materials 0.000 title claims abstract description 14
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 title abstract 2
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 title abstract 2
- 238000002715 modification method Methods 0.000 title abstract 2
- 229910052714 tellurium Inorganic materials 0.000 title abstract 2
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 title abstract 2
- 229910052725 zinc Inorganic materials 0.000 title abstract 2
- 229910052755 nonmetal Inorganic materials 0.000 claims abstract description 27
- 229910001092 metal group alloy Inorganic materials 0.000 claims abstract description 22
- 238000000034 method Methods 0.000 claims abstract description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 105
- 239000000377 silicon dioxide Substances 0.000 claims description 50
- 238000007789 sealing Methods 0.000 claims description 20
- 238000001816 cooling Methods 0.000 claims description 10
- 238000012856 packing Methods 0.000 claims description 10
- 238000012986 modification Methods 0.000 claims description 8
- 230000004048 modification Effects 0.000 claims description 8
- QWUZMTJBRUASOW-UHFFFAOYSA-N cadmium tellanylidenezinc Chemical compound [Zn].[Cd].[Te] QWUZMTJBRUASOW-UHFFFAOYSA-N 0.000 claims description 5
- 238000006073 displacement reaction Methods 0.000 claims description 5
- 239000010453 quartz Substances 0.000 claims description 5
- 230000005855 radiation Effects 0.000 abstract description 5
- 230000005540 biological transmission Effects 0.000 abstract description 4
- 238000013508 migration Methods 0.000 abstract description 2
- 230000005012 migration Effects 0.000 abstract description 2
- 239000000969 carrier Substances 0.000 abstract 3
- 230000002950 deficient Effects 0.000 description 4
- 239000000758 substrate Substances 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 238000004320 controlled atmosphere Methods 0.000 description 2
- 239000004615 ingredient Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000012776 electronic material Substances 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- NSRBDSZKIKAZHT-UHFFFAOYSA-N tellurium zinc Chemical compound [Zn].[Te] NSRBDSZKIKAZHT-UHFFFAOYSA-N 0.000 description 1
- 238000001089 thermophoresis Methods 0.000 description 1
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Abstract
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110067191XA CN102168313B (zh) | 2011-03-18 | 2011-03-18 | 一种碲锌镉晶体的气相退火改性方法 |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110067191XA CN102168313B (zh) | 2011-03-18 | 2011-03-18 | 一种碲锌镉晶体的气相退火改性方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102168313A CN102168313A (zh) | 2011-08-31 |
| CN102168313B true CN102168313B (zh) | 2012-07-04 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201110067191XA Active CN102168313B (zh) | 2011-03-18 | 2011-03-18 | 一种碲锌镉晶体的气相退火改性方法 |
Country Status (1)
| Country | Link |
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| CN (1) | CN102168313B (zh) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104532357A (zh) * | 2014-12-09 | 2015-04-22 | 中国科学院上海技术物理研究所 | 一种消除碲锌镉材料沉淀相缺陷的热处理方法 |
| CN106192014B (zh) * | 2016-09-12 | 2018-07-03 | 西北工业大学 | 碲锌镉晶体的移动循环退火改性方法 |
| CN113388889A (zh) * | 2021-05-19 | 2021-09-14 | 中国电子科技集团公司第十一研究所 | 一种碲锌镉衬底中无第二相夹杂的控制方法 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5454885A (en) * | 1993-12-21 | 1995-10-03 | Martin Marietta Corporation | Method of purifying substrate from unwanted heavy metals |
| US6143630A (en) * | 1994-06-09 | 2000-11-07 | Texas Instruments Incorporated | Method of impurity gettering |
| CN1186484C (zh) * | 2001-11-30 | 2005-01-26 | 西北工业大学 | 碲锌镉晶体退火改性方法 |
| CN101275281B (zh) * | 2007-12-21 | 2010-12-22 | 中国科学院上海技术物理研究所 | 锌镉碲单晶的生长和退火方法以及退火专用坩埚 |
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- 2011-03-18 CN CN201110067191XA patent/CN102168313B/zh active Active
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| Publication number | Publication date |
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| CN102168313A (zh) | 2011-08-31 |
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