CN102163614A - Non-silicon-based organic light-emitting micro-display device as well as preparation method and application thereof - Google Patents
Non-silicon-based organic light-emitting micro-display device as well as preparation method and application thereof Download PDFInfo
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- CN102163614A CN102163614A CN2011100210453A CN201110021045A CN102163614A CN 102163614 A CN102163614 A CN 102163614A CN 2011100210453 A CN2011100210453 A CN 2011100210453A CN 201110021045 A CN201110021045 A CN 201110021045A CN 102163614 A CN102163614 A CN 102163614A
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Abstract
The invention provides a non-silicon-based organic light-emitting micro-display device and a non-silicon-based organic light-emitting micro-display module, which have higher aperture opening ratio relative to a silicon-based micro-display device and can improve the brightness of the display device. The non-silicon-based organic light-emitting micro-display device comprises a non-silicon-based substrate, a plurality of first electrodes and trenches arranged on the non-silicon-based substrate along one direction, an organic layer, and a plurality of second electrodes and isolation columns arranged in the direction which is vertical to the direction, wherein the included angle between each first electrode and the non-silicon-based substrate is less than 45 degrees; the adjacent first electrodes are separated through the trenches, and the adjacent second electrodes are separated through the isolation columns; and the diagonal lines of the non-silicon-based organic light-emitting micro-display device are less than 1 inch, and number of PPIs (plan position indicators) is larger than 1000. Compared with the traditional organic light-emitting device, the device provided by the invention has the advantages that through passivation treatment after photoetching, an insulating layer does not need to be prepared again, and the insulating layer can be directly prepared on the first electrodes, thereby saving the preparation process steps.
Description
Technical field
The present invention relates to miniature Display Technique field, relate in particular to a kind of miniscope that utilizes the preparation of organic electroluminescent technology.
Background technology
Along with people are more and more higher to the requirement of visual experience, display also obtains the development of advancing by leaps and bounds thereupon.People are referred to as flat panel display (Flat Panel Display) to relevant Display Technique field.Miniature demonstration (MicroDisplay) is a branch of flat panel display.Than regular display, miniature demonstration can be on minimum display area the display pixel of integrated high multiple, the pattern that shows in the miniature demonstration need can be seen clearly by magnifying glass.Because the particularity of miniature demonstration, be widely used in systems such as virtual reality, wear-type demonstration, pocket computer, mobile phone, new line show, electron gun is taken aim at, also can combine and realize that large screen projection shows with optical system.According to the type of drive difference, miniature demonstration is divided into passive drive and two kinds of types of active driving, and passive drive is by driving at the substrate periphery external drive circuit; Active driving is to integrate by the pixel with drive circuit and array of display, and each pixel is the type of drive of control separately.
OLED (Organic Light Emitting Display, organic light emitting display) is meant organic semiconducting materials and luminescent material under electric field driven, injects and compoundly causes luminous phenomenon by charge carrier.Conventional OLED display device structure as shown in Figure 1, wherein 1 be substrate, comprises on the substrate: the viewing area A that the luminous point array is formed, negative electrode follow the direction arrangement, and anode is arranged along column direction; Both sides go between regional B1 and B2, corresponding respectively odd-numbered line negative electrode and the even number line negative electrode that connects the viewing area; The downside lead-in wire region D that is connected with the anode of viewing area; Go between regional B1 and B2, downside lead-in wire region D of both sides all is aggregated into IC (integrated circuit) zone C.Viewing area A view as shown in Figure 2, insulating barrier 2 is divided into one by one little lattice with viewing area A along level and vertical direction, each little lattice is exactly a pixel 4, insulated column 2 is arranged on the insulating barrier.A-a directional profile partial view as shown in Figure 3, wherein first electrode 10 is arranged on the substrate 1, the luminescent layer 20 and second electrode 30 cover respectively successively.The zone of first electrode 10, luminescent layer 20 and 30 stacks of second electrode is exactly a pixel 4.The insulated column that is arranged on the insulating barrier separates second electrode of adjacent two pixels, prevents conducting.B-b directional profile partial view as shown in Figure 4, first electrode of adjacent two pixels is insulated layer and 2 separates.
With respect to LCD, OLED has active illuminating, no visual angle problem; In light weight, thin thickness; High brightness, high-luminous-efficiency; Response speed is fast; The serviceability temperature scope is wide; Advantages such as shock resistance is strong.Therefore be called as following desirable display, have a wide range of applications in each field.Based on the above-mentioned advantage of OLED, OLED is considered to the optimum Display Technique that is applied to miniature demonstration.
At present, the miniature active OLED that is shown as that utilizes OLED to make, the miniature demonstration of such active OLED as substrate, all designs on silicon substrate silicon above integrated drive electronics and OLED with ranks driving, sequencing control with Semiconducting Silicon Materials.But adopt the active OLED of silicon materials as the substrate preparation, driving element can take the pixel space, reduces the pixel light-emitting area, makes the OLED aperture opening ratio descend, and causes the OLED luminous efficiency to be difficult to reach the requirement of miniature demonstration.
Therefore, research adopts the miniature demonstration of passive OLED to solve the problem of the miniature demonstration aperture opening ratio of active OLED.
Summary of the invention
The objective of the invention is to overcome above-mentioned defective, a kind of non-silicon-based organic light-emitting micro-display device, preparation method and application thereof are provided.
Above-mentioned purpose of the present invention is achieved by following technical solution:
A kind of non-silicon-based organic light-emitting micro-display device is made up of following,
Non-silica-based substrate is arranged at a plurality of first electrodes and raceway groove on this non-silica-based substrate along a direction, organic layer, and a plurality of second electrodes and insulated column that vertical direction in the direction is provided with,
Angle between first electrode and the described non-silica-based substrate is less than 45 degree; Adjacent first electrode separates by raceway groove, and adjacent second electrode separates by insulated column; This non-silicon-based organic light-emitting micro-display device diagonal is less than 1 inch, and PPI is greater than 1000.
Wherein, the angle between described first electrode and the described non-silica-based substrate is formed by first electrode passivation.
Wherein, the angle between described first electrode and the described non-silica-based substrate is the 25-40 degree.
Wherein, its brightness is greater than 200nit.
Wherein, described organic layer comprises following one or more:
Electron injecting layer, electron transfer layer, luminescent layer, hole injection layer, hole transmission layer, barrier layer.
Wherein, described non-silica-based substrate is a glass.
Wherein, described first electrode and second electrode are transparency electrode.
The present invention also comprises a kind of preparation method of non-silicon-based organic light-emitting micro-display device, comprising:
On non-silica-based substrate, first electrode material is set, first electrode material is carried out photoetching, form a plurality of first electrodes and the raceway groove arranged along a direction, separate by raceway groove between adjacent first electrode;
This first electrode is carried out passivation;
In the direction vertical direction is provided with insulated column on this first electrode;
Depositing organic material on this non-silica-based substrate, organic material forms organic layer on this first electrode and raceway groove;
Deposition second electrode material forms second electrode on this non-silica-based substrate.
Wherein, described first electrode material ITO or the IZO.
Wherein, described second electrode material is Al or Ag.
Wherein, the thickness of described Ag is 15-35nm.
Wherein, the thickness of described Ag is 25nm.
Wherein, described passivation adopts passivating solution to carry out passivation, and it is acid that described passivating solution is.
Wherein, described passivation adopts technique for grinding to carry out passivation.
The present invention also provides a kind of non-silicon-based organic light-emitting little demonstration module, comprises, and above-mentioned non-silicon-based organic light-emitting micro-display device, driver element, connector, the non-silicon-based organic light-emitting micro-display device of drive unit drives show that connector is connected with extraneous power supply.
Wherein, also comprise printed circuit board (PCB), driver element is arranged on this printed circuit board (PCB).
The present invention also provides a kind of projection displays, comprises, the little demonstration module of non-silicon-based organic light-emitting, optical amplification device.
The little demonstration module of non-silicon-based organic light-emitting micro-display device provided by the invention and non-silicon-based organic light-emitting thereof with respect to the silicon-base miniature display device, has than high aperture, thus the brightness that has improved display.Satisfy the miniature Display Technique of organic light emission to the brightness high request.With respect to traditional organic luminescent device, the Passivation Treatment of the present invention after by photoetching do not need to prepare insulating barrier again, directly with the insulating barrier preparation on first electrode, save step of preparation process.
Description of drawings
Fig. 1 is an OLED display device structural representation;
Fig. 2 is the partial schematic diagram of prior art viewing area A;
Fig. 3 is the a-a directional profile part schematic diagram of prior art viewing area A;
Fig. 4 is the b-b directional profile part schematic diagram of prior art viewing area A;
Fig. 5 is the partial schematic diagram of light-emitting zone of the present invention;
Fig. 6 is the a-a directional profile part schematic diagram of viewing area A of the present invention;
Fig. 7 is the b-b directional profile part schematic diagram of viewing area A of the present invention;
Fig. 8 is preparation method's flow chart of the non-silicon-based organic light-emitting micro-display device of the present invention;
Fig. 9 is first electrode and the substrate partial schematic diagram before and after first electrode passivation.
Embodiment
The present invention is described in further detail below by specific embodiment.
Passive OLED miniscope of the present invention comprises non-silica-based substrate (hereinafter to be referred as substrate), is positioned at first electrode on the substrate, organic layer, second electrode.Wherein first electrode is separated by the raceway groove that photoetching forms, and second electrode is separated by the insulated column that photoetching forms.After the first electrode photoetching for preparing on the substrate forms raceway groove, first electrode is carried out burr and the projection of Passivation Treatment to eliminate first electrode surface, thereby need on first electrode, not prepare insulating barrier.By technical scheme of the present invention, realized that passive OLED dispenses insulating barrier preparation technology in the preparation, reduce the adhering zone of the insulating barrier and first electrode, thereby increase the contact area of first electrode and luminescent layer, increase the light-emitting area of each pixel, and then increase the aperture opening ratio of display device.This non-silicon-based organic light-emitting micro-display device diagonal is less than 1 inch, and PPI (number of pixels that per inch had, pixels per inch) is greater than 1000.PPI is too low, and the pixel that does not then have abundance shows, can not satisfy the requirement of miniature demonstration.Its brightness is greater than 200nit, and brightness is too low can not satisfy the needs that projection is used, and can not satisfy the requirement of miniature demonstration.
Passive OLED miniscope outward appearance of the present invention can be with reference to Fig. 1, wherein light-emitting zone as shown in Figure 5, wherein pixel 5 is separated by raceway groove 6 and insulated column 7.
A-a directional profile partial view as shown in Figure 6, wherein first electrode 50 is arranged on the substrate 5, the luminescent layer 60 and second electrode 70 cover respectively successively.The zone of first electrode 50, luminescent layer 60 and 70 stacks of second electrode forms pixel 8.The insulated column 7 that is arranged on first electrode 50 separates second electrode 70 of adjacent two pixels, prevents conducting.B-b directional profile partial view as shown in Figure 7, first electrode 50 of adjacent two pixels is separated by raceway groove (not shown, after depositing the organic layer 60 and second electrode 70 successively, the raceway groove between neighbor pixel is filled by the organic layer 60 and second electrode 70).
By the comparison of Fig. 2 and Fig. 5, we as can be seen, the viewing area of prior art, each pixel 4 is separated by insulating barrier 2 and insulated column 3; And pixel 8 of the present invention is separated by raceway groove 6 and insulated column 7, and raceway groove 6 produces for to the first electrode photoetching time, does not need to increase the step of preparation insulating barrier.By the comparison of Fig. 3 and Fig. 6, we as can be seen, the insulated column 3 of prior art be the preparation on insulating barrier 2, be pedestal with insulating barrier 2; And insulated column 7 of the present invention is directly to prepare on first electrode 50, need be with insulating barrier 2 as pedestal.By the comparison of Fig. 4 and Fig. 7, we as can be seen, first electrode 10 of prior art is separated by insulating barrier 2; And first electrode of the present invention does not need insulating barrier to separate.
Preparation method's flow chart of non-silicon-based organic light-emitting micro-display device of the present invention may further comprise the steps as shown in Figure 8:
Step 801 is provided with first electrode material on substrate.First electrode material is generally selected transparent, electric conducting material for use, as ITO (tin indium oxide), IZO (indium zinc oxide).The mode that first electrode material is set comprises sputtering ITO, evaporation ITO.Before this step, need substrate is cleaned.The material of substrate is a glass.
Step 802 is carried out photoetching to ITO.The raceway groove that photoetching forms is divided into the rectangular of plurality of parallel with ITO.Raceway groove is meant the part that does not have ITO on the substrate.
Step 803 is carried out Passivation Treatment to ITO, eliminates the burr and the projection that form in the ITO photoetching process.Passivation can adopt passivating solution to carry out passivation, and it is acid that described passivating solution is.Also can adopt technique for grinding to carry out passivation.
First electrode after the passivation and substrate partial schematic diagram as shown in Figure 9, Fig. 9 I is a schematic diagram before the passivation, as can be seen, at the ITO edge surface, a plurality of irregular burrs and projection 51 is arranged; Fig. 9 II is a schematic diagram after the passivation, and dotted portion is for being passivated the removal part, and original ITO is passivated the sloping shape structure into edge-smoothing.Among Fig. 9 III, the ITO edge gradient and substrate are an angle, and this angle is less than 45 degree.If greater than 45 degree, be unfavorable for the deposition of organic layer and negative electrode, cause deposition materials on domatic, to rupture easily.This angle is preferably the 25-40 degree.Can make that less than 25 degree the thickness of ITO is thin excessively, reduce the electric conductivity of ITO, influence charge transfer.
Step 804 prepares insulated column on ITO.Insulated column extends along the vertical direction of raceway groove.
Step 805, depositing organic material on substrate, organic material forms organic layer on this first electrode and raceway groove.Organic layer comprises following one or more: electron injecting layer, electron transfer layer, luminescent layer, hole injection layer, hole transmission layer, barrier layer.
Step 806, deposition second electrode material forms second electrode on this non-silica-based substrate.Second electrode material generally adopts Al or Ag.
When adopting Ag to do second electrode, when the thickness of Ag was the 15-35nm scope, Ag was transparent, the non-silicon-based organic light-emitting micro-display device of preparing.Preferably, the thickness of Ag is 25nm.
The present invention also comprises the little demonstration module of a kind of non-silicon-based organic light-emitting, comprise, non-silicon-based organic light-emitting micro-display device as claimed in claim 1, driver element, connector, the non-silicon-based organic light-emitting micro-display device of drive unit drives show that connector is connected with extraneous power supply, printed circuit board (PCB), driver element are arranged on this printed circuit board (PCB).
The present invention also comprises a kind of projection displays, comprises, the little demonstration module of non-silicon-based organic light-emitting, optical amplification device.
Though the present invention is to disclose as above than preferable embodiment; yet it is not in order to limit the present invention; anyly be familiar with this technology personage; without departing from the spirit and scope of the present invention; when being used for a variety of modifications and variations; therefore, protection scope of the present invention is as the criterion when the claim with application defines.
Claims (17)
1. a non-silicon-based organic light-emitting micro-display device is made up of following,
Non-silica-based substrate is arranged at a plurality of first electrodes and raceway groove on this non-silica-based substrate along a direction, organic layer, and a plurality of second electrodes and insulated column that vertical direction in the direction is provided with,
It is characterized in that the angle between first electrode and the described non-silica-based substrate is less than 45 degree; Adjacent first electrode separates by raceway groove, and adjacent second electrode separates by insulated column; This non-silicon-based organic light-emitting micro-display device diagonal is less than 1 inch, and PPI is greater than 1000.
2. non-according to claim 1 silicon-based organic light-emitting micro-display device is characterized in that, the angle between described first electrode and the described non-silica-based substrate is formed by first electrode passivation.
3. non-as claimed in claim 1 or 2 silicon-based organic light-emitting micro-display device is characterized in that, the angle between described first electrode and the described non-silica-based substrate is the 25-40 degree.
4. non-according to claim 1 silicon-based organic light-emitting micro-display device is characterized in that its brightness is greater than 200nit.
5. non-according to claim 1 silicon-based organic light-emitting micro-display device is characterized in that, described organic layer comprises following one or more:
Electron injecting layer, electron transfer layer, luminescent layer, hole injection layer, hole transmission layer, barrier layer.
6. non-according to claim 1 silicon-based organic light-emitting micro-display device is characterized in that, described non-silica-based substrate is a glass.
7. non-according to claim 1 silicon-based organic light-emitting micro-display device is characterized in that described first electrode and second electrode are transparent.
8. the preparation method of a non-silicon-based organic light-emitting micro-display device is characterized in that, comprising:
On non-silica-based substrate, first electrode material is set, first electrode material is carried out photoetching, form a plurality of first electrodes and the raceway groove arranged along a direction, separate by raceway groove between adjacent first electrode;
This first electrode is carried out passivation;
In the direction vertical direction is provided with insulated column on this first electrode;
Depositing organic material on this non-silica-based substrate, organic material forms organic layer on this first electrode and raceway groove;
Deposition second electrode material forms second electrode on this non-silica-based substrate.
9. as the preparation method of non-silicon-based organic light-emitting micro-display device as described in the claim 8, it is characterized in that described first electrode material ITO or the IZO.
10. as the preparation method of non-silicon-based organic light-emitting micro-display device as described in claim 8 or 9, it is characterized in that described second electrode material is Al or Ag.
11. the preparation method as non-silicon-based organic light-emitting micro-display device as described in the claim 9 is characterized in that the thickness of described Ag is 15-35nm.
12. the preparation method as non-silicon-based organic light-emitting micro-display device as described in the claim 9 is characterized in that the thickness of described Ag is 25nm.
13. the preparation method as non-silicon-based organic light-emitting micro-display device as described in the claim 8 is characterized in that, described passivation adopts passivating solution to carry out passivation, and it is acid that described passivating solution is.
14. the preparation method as non-silicon-based organic light-emitting micro-display device as described in the claim 8 is characterized in that, described passivation adopts technique for grinding to carry out passivation.
15. the little demonstration module of non-silicon-based organic light-emitting is characterized in that, comprises, non-silicon-based organic light-emitting micro-display device as claimed in claim 1, driver element, connector, the non-silicon-based organic light-emitting micro-display device of drive unit drives shows that connector is connected with extraneous power supply.
16. the little demonstration module of non-silicon-based organic light-emitting as claimed in claim 15 is characterized in that, comprises that also printed circuit board (PCB), driver element are arranged on this printed circuit board (PCB).
17. a projection displays is characterized in that, comprises, the little demonstration module of non-silicon-based organic light-emitting as claimed in claim 15, optical amplification device.
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| CN2011100210453A CN102163614A (en) | 2011-01-13 | 2011-01-13 | Non-silicon-based organic light-emitting micro-display device as well as preparation method and application thereof |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102280448A (en) * | 2011-08-31 | 2011-12-14 | 中国科学院微电子研究所 | Layout structure of silicon-base organic light-emitting microdisplay pixel unit |
| CN107958178A (en) * | 2017-04-22 | 2018-04-24 | 深圳信炜科技有限公司 | Photoelectric sensing module and preparation method thereof, electronic device |
| CN110767828A (en) * | 2018-11-22 | 2020-02-07 | 云谷（固安）科技有限公司 | Display panel, display screen and display terminal |
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| CN2492564Y (en) * | 2001-08-16 | 2002-05-22 | 铼宝科技股份有限公司 | Electrochemical etching flattening device for indium-tin oxide electrode on organic electroluminescent display panel |
| CN1942031A (en) * | 2005-09-30 | 2007-04-04 | 电子科技大学 | Production of isolating column of organic electroluminescent device |
| US20070188093A1 (en) * | 2006-02-16 | 2007-08-16 | Yoshiaki Nagara | Organic electroluminescent display panel |
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2011
- 2011-01-13 CN CN2011100210453A patent/CN102163614A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN2492564Y (en) * | 2001-08-16 | 2002-05-22 | 铼宝科技股份有限公司 | Electrochemical etching flattening device for indium-tin oxide electrode on organic electroluminescent display panel |
| CN1942031A (en) * | 2005-09-30 | 2007-04-04 | 电子科技大学 | Production of isolating column of organic electroluminescent device |
| US20070188093A1 (en) * | 2006-02-16 | 2007-08-16 | Yoshiaki Nagara | Organic electroluminescent display panel |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102280448A (en) * | 2011-08-31 | 2011-12-14 | 中国科学院微电子研究所 | Layout structure of silicon-base organic light-emitting microdisplay pixel unit |
| CN102280448B (en) * | 2011-08-31 | 2013-03-06 | 中国科学院微电子研究所 | Layout structure of silicon-base organic light-emitting microdisplay pixel unit |
| CN107958178A (en) * | 2017-04-22 | 2018-04-24 | 深圳信炜科技有限公司 | Photoelectric sensing module and preparation method thereof, electronic device |
| CN110767828A (en) * | 2018-11-22 | 2020-02-07 | 云谷（固安）科技有限公司 | Display panel, display screen and display terminal |
| CN110767828B (en) * | 2018-11-22 | 2023-01-24 | 云谷（固安）科技有限公司 | Display panel, display screen and display terminal |
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Application publication date: 20110824 |