CN102157344B - Heating-stage scanner for deep ultraviolet laser annealing and annealing process - Google Patents
Heating-stage scanner for deep ultraviolet laser annealing and annealing process Download PDFInfo
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- CN102157344B CN102157344B CN 201010567312 CN201010567312A CN102157344B CN 102157344 B CN102157344 B CN 102157344B CN 201010567312 CN201010567312 CN 201010567312 CN 201010567312 A CN201010567312 A CN 201010567312A CN 102157344 B CN102157344 B CN 102157344B
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Abstract
The invention discloses a heating-stage scanner for deep ultraviolet laser annealing, belonging to the technical field of semiconductor manufacturing devices and semiconductor ultra-shallow junction manufacture and an annealing technology. The scanner is a fixed laser beam, wherein double heating stages A and B have completely same structures and are fixedly arranged on a heating stage fixing plate side by side, an X2 translation table top is fixed below the heating stage fixing plate, an X2 electric translation table is arranged on the X2 translation table top, and an X1 electric translation table is connected with theX2 electric translation table by an X1 translation table top; the lower part of the X1 electric translation table is connected with a Y1 electric translation table and a Y2 electric translation table respectively through a Y1 translation table top and a Y2 translation table top; and the annealing of a whole semiconductor wafer is finished by the movement of the X1 electric translation table in two directions of X and Y, therefore, the waiting time for making the wafer realize the thermal balance state of a temperature required by the process is shortened. Through the heating-stage scanner for the deep ultraviolet laser annealing, disclosed by the invention, the preheated wafer needing of carrying out the laser annealing does not need to be transferred, and the utilization ratio of equipment is increased.
Description
Technical field
The invention belongs to the semiconductor manufacturing facility scope, particularly a kind of heating plate platform scanning means and the annealing process for deep ultraviolet laser annealing of the super shallow junction manufacturing of semiconductor.
Background technology
Along with integrated circuit and mass storage are that the semiconductor device technology node of representative is from 65nm, 45nm enters into 32nm, the device architecture with heavily doped, super shallow MOS device source and drain extension is produced in requirement, namely proposed to make the requirement of (Ultra-Shallow Junction is called for short USJ) of super shallow junction in technique.This moment, the square resistance of super shallow junction was 810-900 Ω/sq, and junction depth is 9-10nm, and the steepness of knot is 1.8-2.0nm/decade.Produce 32nm and following respectively for the requirement of device to super shallow PN junction in order to satisfy at the 200-300mm disk, except taking the new technical measures at the impurity doping techniques, in the annealing link of impurity activation, need to make change to traditional rapid thermal annealing based on light (RTA) method.The current comparatively super shallow junction annealing process of approval is that wavelength is the laser annealing technology of deep ultraviolet.
Adopt the benefit of deep ultraviolet laser annealing technology to be:
1) the deep ultraviolet laser wavelength is short, to the direct acting depth as shallow of material, only super shallow surf zone is exerted an influence;
2) because annealing laser is pulse operation, laser pulse is about tens nanosecond orders, annealing is adopted disk scanning or a step-by-step system, and therefore total annealing is very of short duration action time, can be with the again diffusion control of annealing stage impurity in the level close to zero diffusion;
3) can obtain the impurity doping solubility of super solid solubility, reduce the resistance of super shallow PN junction source and drain extension, improve the ohmic contact of source-drain electrode.
Super shallow, the precipitous PN junction that adopts the deep ultraviolet laser annealing technology to manufacture can satisfy the demand that 32nm and following process node integrated circuit thereof are made.
It is pointed out that the deep ultraviolet laser annealing that the present invention is alleged, refer to that specially it is different from existing laser annealing technology in the material mechanism of action for the laser annealing technology of super shallow junction making.At present, laser annealing apparatus and the matched process technology made for super shallow junction in the world also are in the experimental study stage.
For super shallow junction laser annealing, because the single pulse energy of current laser may is lower, can't anneal simultaneously to whole semiconductor wafer, so can only take the mode of line sweep or a stepping to realize the annealing of whole semiconductor wafer.Need simultaneously backing material is heated, so not only the energy density threshold of laser annealing can be reduced to 350mJ/cm
2Magnitude, can also alleviate simultaneously owing to adopt the impact of the thermal stress that high intensity laser beam annealing produces at substrate.
The temperature of the coherence request heating plate platform semiconductor-on-insulator disk of annealing process is always and everywhere identical in the laser annealing process, only has process stabilizing, consistent, just can accomplish the consistent of device performance.But because the thermal capacity of semiconductor wafer material and the relation of thermal conductivity, the foundation of temperature and reach heat balance and all need the regular hour on the semiconductor wafer certainly will cause a stand-by period like this, has reduced the efficient (production capacity) of annealing device.
Based on above reason, in order to reduce the stand-by period in the heating process, the present invention proposes the laser annealing technique scheme of the two heating plate platform scanning means of a kind of A, B.Specifically, be exactly to utilize two heating plate platforms, on a heating plate platform, semiconductor wafer carried out laser annealing in, on another heating plate platform, semiconductor wafer is preheated, thereby reduced the stand-by period in the laser annealing process, improved equipment capacity.
Summary of the invention
The purpose of this invention is to provide heating plate platform scanning means and annealing process for a kind of deep ultraviolet laser annealing of semiconductor device fabrication process, it is characterized in that, described scanning means is that laser beam maintains static, the structure of the two heating plate platforms of A, B is identical, be fixed in side by side above the heating plate platform fixed head, fixing X2 translation table top below the heating plate platform fixed head, the X2 motorized precision translation stage is installed on the X2 translation table top, and the X1 motorized precision translation stage is connected with the X2 motorized precision translation stage by X1 translation table top; Be connected with the Y2 motorized precision translation stage with the Y1 motorized precision translation stage with Y2 translation table top by Y1 translation table top respectively below the X1 motorized precision translation stage; By the movement of X1 motorized precision translation stage at the X-Y both direction, finish the annealing to whole semiconductor wafer; The X2 motorized precision translation stage is used for the switching of A, B heating plate platform.When laser beam was a point-source of light or a line, the X1 motorized precision translation stage was done at the uniform velocity traveling priority; On Y-direction, the Y1 motorized precision translation stage that is arranged in parallel and Y2 motorized precision translation stage carry out synchronously stepping and move, and finish scanning to semiconductor wafer with this; If laser beam be one through the rectangle light field after the homogenize, semiconductor wafer is all done stepping in directions X and Y-direction and is moved; The two heating plate platform scanning means of described A, B are implemented the deep ultraviolet laser annealing process to the semiconductor wafer of processing, impurity with the active ions injection, eliminate implant damage, obtain super shallow pn knot, reduce simultaneously the stand-by period of equipment in the laser annealing process, wherein deep ultraviolet laser refers to that the wavelength of laser is 193nm～350nm, and the single pulse energy of pulse laser beam is 0.2J～1.5J, pulsewidth is at 10～1000ns, repetition rate 10～1000Hz.
The stroke of described X1, X2, Y1 and Y2 motorized precision translation stage must be slightly larger than institute's processing semiconductor disk diameter.
The two heating plate platforms of described A, B carry out 300～500 ℃ of steady temperature heating to semiconductor wafer.
Described institute processing semiconductor disk refers to semi-conductor silicon chip or contains the disk of semiconductor material thin film: SOI, SGOI or GOI.
Described laser annealing technique is when A heating plate platform carries out laser annealing, preheat at B heating plate platform, after the semiconductor wafer on the A heating plate platform is finished laser annealing, semiconductor wafer on the A heating plate platform is taken off to be placed on the cold drawing by manipulator and cools off, put again new semiconductor wafer on the A heating plate platform, preheat on the A heating plate platform; Begin to carry out laser annealing on the B heating plate platform, so move in circles.Total time T that preheats of a heating plate platform semiconductor-on-insulator disk
TotalLaser annealing time T for another heating plate platform semiconductor-on-insulator disk
AnnealingAdding annealing finish after unloading piece and load time T
Unload+ T
Load, and the time T of the switching of A, B heating plate platform
SwitchBe
T
total＝T
annealing+T
unload+T
load+T
switch (1)
When pre-warmed semiconductor wafer reaches thermally equilibrated stand-by period T
WaitingLess than or equal to total time T that preheats
TotalThe time, will there be extra equipment wait state; When pre-warmed semiconductor wafer reaches thermally equilibrated stand-by period T
WaitingGreater than total time T that preheats
TotalThe time, equipment need to wait for that semiconductor wafer reaches heat balance, but because semiconductor wafer enters into the state of preheating in advance, makes the stand-by period of equipment obtain shortening.
Intentionally effect of the present invention is to adopt the two heating plate platform scanning means of AB that the semiconductor wafer of processing is implemented the deep ultraviolet laser annealing processs, when on the heating plate platform semiconductor wafer being carried out laser annealing, on another heating plate platform, semiconductor wafer is preheated, thereby reduced stand-by period when making semiconductor wafer reach technique to require the underlayer temperature thermal equilibrium state.Semiconductor wafer can carry out laser annealing on two heating plate platforms, so that pre-warmed semiconductor wafer need not to be transferred to another sheet platform when laser annealing, improved utilization rate of equipment and installations.
Description of drawings
Fig. 1 is the front view of heating plate platform scanning means.
Fig. 2 is the vertical view of heating plate platform scanning means.
For making illustrative simplicity understand that Fig. 1,2 has omitted the liquid line that manipulator, the cable that links to each other with the sheet platform and temperature control are used.
Among the figure, 1-is sweep center point, and the beam position of the deep ultraviolet pulse laser that laser produces is in this; 2-A heating plate platform; 3-B heating plate platform; The 4-semiconductor wafer; 5-Y direction Y1 motorized precision translation stage; 6-Y1 motorized precision translation stage drive motors; 7-Y direction Y2 motorized precision translation stage; 8-Y2 motorized precision translation stage drive motors; 9-X direction X1 motorized precision translation stage; 10-X1 motorized precision translation stage drive motors; 11-X direction X2 motorized precision translation stage, the function that is used for A, B sheet platform is switched; 12-X2 motorized precision translation stage motor; 13-X1 motorized precision translation stage table top; 14-X2 motorized precision translation stage table top; 15-heating plate platform fixed head, it is fixed on the X2 motorized precision translation stage table top, and by location notch A, B heating plate platform is fixed; 16-Y1 motorized precision translation stage table top; 17-Y2 motorized precision translation stage table top.
Fig. 3-1, the initial position schematic diagram when A heating plate platform is the laser annealing pattern.
Fig. 3-2, when total number of steps of Y-direction is odd number time, the position view during semiconductor wafer laser annealing that A heating plate platform is finished, with the semiconductor wafer of shade for carrying out laser annealing.
Fig. 3-3, when total number of steps of Y-direction is even number time, the position view the when semiconductor wafer on the A heating plate platform is finished laser annealing, with the disk of shade for carrying out laser annealing.
Fig. 4-1, the initial position schematic diagram when being the laser annealing pattern on the B heating plate platform.
Fig. 4-2, when total number of steps of Y-direction is odd number time, the position view the when semiconductor wafer on the B heating plate platform is finished laser annealing, with the semiconductor wafer of shade for carrying out laser annealing.
Fig. 4-3, when total number of steps of Y-direction is even number time, the position view the when semiconductor wafer on the B heating plate platform is finished laser annealing, with the semiconductor wafer of shade for carrying out laser annealing.
Embodiment
The invention provides a kind of heating plate platform scanning means of the deep ultraviolet laser annealing apparatus for semiconductor device fabrication process, below in conjunction with specific embodiments and the drawings the present invention is further described.
Fig. 1, Fig. 2 are the structural representation of heating plate platform scanning means.
The laser beam 1 of scanning means maintains static among the figure; The structure of A heating plate platform 2 and B heating plate platform 3 is identical, be fixed in side by side above the heating plate platform fixed head 15, heating plate platform fixed head 15 following fixedly X2 translation table tops 14, X2 motorized precision translation stage 11 is installed on the X2 translation table top 14, and X2 electric translation motor 12 is installed on the X2 motorized precision translation stage 14; X1 motorized precision translation stage 9 is connected connection by X1 translation table top 13 with the X2 motorized precision translation stage; Are connected with Y2 translation table top to be connected with the Y2 motorized precision translation stage with Y1 motorized precision translation stage 5 by Y1 translation table top 5 respectively below the fixing X1 electric translation motor 10 on the X1 motorized precision translation stage 9, X1 motorized precision translation stage 9 and are connected; Heating plate platform scanning means is finished the annealing to whole semiconductor wafer by the movement of X1 motorized precision translation stage at the X-Y both direction; The X2 motorized precision translation stage is used for the switching of A, B heating plate platform.When laser beam was a point-source of light or a line, the X1 motorized precision translation stage was done at the uniform velocity traveling priority; On Y-direction, the Y1 motorized precision translation stage that is arranged in parallel and Y2 motorized precision translation stage carry out synchronously stepping and move, and finish scanning to semiconductor wafer with this; If laser beam be one through the rectangle light field after the homogenize, semiconductor wafer is all done stepping in directions X and Y-direction and is moved;
The two heating plate platform scanning means of described A, B are implemented the deep ultraviolet laser annealing process to the semiconductor wafer of processing, and with the impurity that active ions inject, eliminate implant damage, obtain super shallow pn knot, reduce simultaneously the stand-by period of equipment in the laser annealing process.
Operation principle of the present invention and implementation step are shown in following embodiment.
Embodiment one
A kind of heating plate platform scanning means of the deep ultraviolet laser annealing apparatus for semiconductor device fabrication process, its procedure of processing comprises:
1) A heating plate platform is the laser annealing pattern, is parked in initial position, and shown in Fig. 3-1, it is 300 ℃ that the sheet platform is set heating-up temperature;
2) equipment waits for that the temperature of A heating plate platform semiconductor-on-insulator disk reaches heat balance;
3) laser beam is to the processing of annealing of the semiconductor wafer on the A heating plate platform, and the semiconductor wafer on this moment B heating plate platform is preheated;
4) when the stepping of Y-direction is odd number time, laser beam is annealed the final position of processing shown in Fig. 3-2 to the semiconductor wafer on the A heating plate platform, and when the stepping of Y-direction be even number when inferior, the final position is shown in Fig. 3-3;
5) after the semiconductor wafer on the A heating plate platform was finished annealing, A, B heating plate platform were got back to initial position, shown in Fig. 3-1;
6) manipulator is finished unloading piece, load operation to A heating plate platform, and the semiconductor wafer on the A heating plate platform begins to preheat;
7) B heating plate platform switches to the laser annealing pattern, is parked in initial position, shown in Fig. 4-1.
Embodiment two
A kind of heating plate platform scanning means of the deep ultraviolet laser annealing apparatus for semiconductor device fabrication process, its procedure of processing comprises:
1) B heating plate platform is the laser annealing pattern, is parked in initial position, and shown in Fig. 4-1, it is 350 ℃ that the sheet platform is set heating-up temperature;
2) equipment waits for that the semiconductor wafer on the B heating plate platform reaches heat balance;
3) laser beam is to the processing of annealing of the semiconductor wafer on the B heating plate platform, and the semiconductor wafer on this moment A heating plate platform is preheating;
When 4) stepping of Y-direction was odd number time, laser beam was annealed the final position of processing shown in Fig. 4-2 to the semiconductor wafer on the B heating plate platform, and when the stepping of Y-direction was even number time, the final position was shown in Fig. 4-3;
5) after the semiconductor wafer on the B heating plate platform was finished annealing, AB heating plate platform was got back to initial position, shown in Fig. 4-1;
6) manipulator is finished unloading piece, load operation to the semiconductor wafer on the B heating plate platform, and the semiconductor wafer on the B heating plate platform begins to preheat;
7) A heating plate platform switches to the laser annealing pattern, is parked in initial position, shown in Fig. 3-1.
Claims (6)
1. the heating plate platform scanning means of deep ultraviolet laser annealing, it is characterized in that, described scanning means is that laser beam maintains static, the structure of the two heating plate platforms of A, B is identical, be fixed in side by side above the heating plate platform fixed head, fixing X2 translation table top below the heating plate platform fixed head, the X2 motorized precision translation stage is installed on the X2 translation table top, and the X1 motorized precision translation stage is connected with the X2 motorized precision translation stage by X1 translation table top; Be connected with the Y2 motorized precision translation stage with the Y1 motorized precision translation stage with Y2 translation table top by Y1 translation table top respectively below the X1 motorized precision translation stage; Heating plate platform scanning means is finished the annealing to whole semiconductor wafer by the movement of X1 motorized precision translation stage at the X-Y both direction; The two heating plate platform scanning means of described A, B are implemented the deep ultraviolet laser annealing process to the semiconductor wafer of processing, and with the impurity that active ions inject, eliminate implant damage, obtain super shallow pn knot, reduce simultaneously the stand-by period of equipment in the laser annealing process; Wherein deep ultraviolet laser refers to that the wavelength of laser is 193nm～350nm, and the single pulse energy of pulse laser beam is 0.2J～1.5J, and pulsewidth is at 10～1000ns, repetition rate 10～1000Hz.
2. the heating plate platform scanning means of described deep ultraviolet laser annealing according to claim 1 is characterized in that described X2 motorized precision translation stage is used for the switching of A, B heating plate platform; When laser beam was a point-source of light or a line, the X1 motorized precision translation stage was done at the uniform velocity traveling priority; On Y-direction, the Y1 motorized precision translation stage that is arranged in parallel and Y2 motorized precision translation stage carry out synchronously stepping and move, and finish scanning to semiconductor wafer with this; If laser beam be one through the rectangle light field after the homogenize, semiconductor wafer is all done stepping in directions X and Y-direction and is moved.
3. the heating plate platform scanning means of described deep ultraviolet laser annealing according to claim 1 is characterized in that the stroke of described X1, X2, Y1 and Y2 motorized precision translation stage must be slightly larger than institute's processing semiconductor disk diameter.
4. the heating plate platform scanning means of described deep ultraviolet laser annealing according to claim 1 is characterized in that the two heating plate platforms of described A, B carry out 300～500 ℃ of steady temperatures heating to semiconductor wafer.
5. the heating plate platform scanning means of described deep ultraviolet laser annealing according to claim 1 is characterized in that described semiconductor wafer refers to semi-conductor silicon chip or contains the disk of semiconductor material thin film: SOI, SGOI or GOI.
6. the laser annealing technique of the heating plate platform scanning means of the described deep ultraviolet laser annealing of a claim 1, it is characterized in that, described laser annealing technique is when A heating plate platform carries out laser annealing, preheat at B heating plate platform, after the semiconductor wafer on the A heating plate platform is finished laser annealing, semiconductor wafer on the A heating plate platform is taken off to be placed on the cold drawing by manipulator and cools off, and puts new semiconductor wafer on the A heating plate platform again, preheats on the A heating plate platform; Begin to carry out laser annealing on the B heating plate platform, so move in circles; Total time T that preheats of a heating plate platform semiconductor-on-insulator disk
TotalLaser annealing time T for another heating plate platform semiconductor-on-insulator disk
AnnealingAdding annealing finish after unloading piece and load time T
Unload+ T
Load, and the time T of the switching of A, B heating plate platform
SwitchBe
T
total＝T
annealing+T
unload+T
load+T
switch (1)
When pre-warmed semiconductor wafer reaches thermally equilibrated stand-by period T
WaitingLess than or equal to total time T that preheats
TotalThe time, will there be extra equipment wait state; When pre-warmed semiconductor wafer reaches thermally equilibrated stand-by period T
WaitingGreater than total time T that preheats
TotalThe time, equipment need to wait for that semiconductor wafer reaches heat balance, but because semiconductor wafer enters into the state of preheating in advance, makes the stand-by period of equipment obtain shortening.
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1467802A (en) * | 2002-06-07 | 2004-01-14 | 富士胶片株式会社 | Laser anneal equipment and laser film forming method |
| CN1755900A (en) * | 2004-09-27 | 2006-04-05 | 北方液晶工程研究开发中心 | Preparation method of gate insulation layer of polysilicon thin-film transistor by laser-annealing |
| CN101217115A (en) * | 2008-01-04 | 2008-07-09 | 清华大学 | Laser annealing technique on the wafer back of IGBT high voltage power device |
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| JP4364674B2 (en) * | 2003-02-28 | 2009-11-18 | 株式会社半導体エネルギー研究所 | Method for manufacturing semiconductor device |
| JP2005217209A (en) * | 2004-01-30 | 2005-08-11 | Hitachi Ltd | Laser annealing method and laser annealer |
| WO2009150733A1 (en) * | 2008-06-12 | 2009-12-17 | 株式会社Ihi | Laser annealing method and laser annealing apparatus |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1467802A (en) * | 2002-06-07 | 2004-01-14 | 富士胶片株式会社 | Laser anneal equipment and laser film forming method |
| CN1755900A (en) * | 2004-09-27 | 2006-04-05 | 北方液晶工程研究开发中心 | Preparation method of gate insulation layer of polysilicon thin-film transistor by laser-annealing |
| CN101217115A (en) * | 2008-01-04 | 2008-07-09 | 清华大学 | Laser annealing technique on the wafer back of IGBT high voltage power device |
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| JP特开2004-282060A 2004.10.07 |
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