CN102154686B - Crystalline silicon ingot casting method and silicon ingot - Google Patents
Crystalline silicon ingot casting method and silicon ingot Download PDFInfo
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- CN102154686B CN102154686B CN201110093758.0A CN201110093758A CN102154686B CN 102154686 B CN102154686 B CN 102154686B CN 201110093758 A CN201110093758 A CN 201110093758A CN 102154686 B CN102154686 B CN 102154686B
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Abstract
The invention discloses a crystalline silicon ingot casting method. The method comprises the following steps of: placing at least one heterogeneous seed crystal on the inner surface of a vessel, wherein the at least one heterogeneous seed crystal is a crystal of a non-silicon seed crystal; and controlling fused silica to grow crystals so as to form a target silicon ingot by cooling the fused silica which is contacted with the at least one heterogeneous seed crystal placed on the inner surface of the vessel. The invention also discloses the silicon ingot, and single crystals or large-grain polycrystalline silicon grow by using non-silicon crystals as the seed crystals in the vessel. The at least one heterogeneous seed crystal and the silicon crystals are substances with different physical and chemical properties, so that the temperature during ingot casting is easy to control to make the at least one heterogeneous seed crystal not completely fused. The aims that the at least one heterogeneous seed crystal is repeatedly used and the production process is simplified are fulfilled by the property that different substances are easy to separate.
Description
Technical field
The present invention relates to photovoltaic field, relate in particular to a kind of crystalline silicon casting ingot method and silicon ingot.
Background technology
In fast-developing photovoltaic industry, competition is excitation more and more, and high-efficiency and low-cost becomes main competition spot.The method that obtains at present described crystalline silicon generally includes: molten (FZ, Float-Zone) method in vertical pulling (CZ, Czochralski) Fa He district of silicon single crystal, and the directional solidification method of polysilicon.Wherein, owing to producing the directional solidification method of polysilicon, to cast out the polycrystal silicon ingot coming larger at every turn, improved greatly production efficiency, but the dislocation forming on the border due to intergranule in conventional polysilicon can produce crystal boundary, this can cause using the battery conversion efficiency of this production of polysilicon on the low side.And the battery of monocrystalline silicon production just can not exist the efficiency of conversion this situation on the low side of above polysilicon, monocrystalline silicon battery efficiency of conversion is also high than the transformation efficiency of polycrystal silicon cell.But the cost of the silicon single crystal of producing by the molten method of vertical pulling or district is higher and production efficiency is lower.In view of this, prior art has proposed to utilize the method for directional freeze to produce silicon single crystal or has had the polysilicon of large crystal grain, thereby thereby enhance productivity and reduce production costs in the efficiency of conversion situation of raising crystalline silicon, but in prior art, utilize directional freeze manufacture order crystal silicon or have in the method for polysilicon of large crystal grain, it is all the polysilicon that utilizes silicon crystal to obtain silicon single crystal as seed crystal or there is large crystal grain, owing to utilizing the silicon crystal of homogeneity as seed crystal, described silicon seed is all identical with the physical propertys such as silicon raw material fusing point of homogeneity, the bad control of temperature during ingot casting, seed crystal easily melts completely and causes utilizing the method for directional freeze to produce silicon single crystal or the polysilicon with large crystal grain can not be realized, and after completing ingot casting, described silicon seed is owing to combining together and being difficult to separated causing and can not reusing with silicon ingot, while utilizing silicon seed ingot casting, all to make new silicon seed at every turn, increase the operation of producing, also increase production cost.
Summary of the invention
In view of this, the invention provides a kind of crystalline silicon casting ingot method and silicon ingot, in container, utilize the crystal of non-silicon matter to come growing single-crystal or macromeritic polysilicon as the mode of seed crystal, because heterogeneous seed crystal and silicon crystal are the material with different physicochemical properties, temperature while easily controlling ingot casting and make heterogeneous seed crystal be unlikely to complete melting, utilize segregative character between different substances simultaneously, reach the object that production process was recycled and simplified to heterogeneous seed crystal.
The embodiment of the present invention provides a kind of crystalline silicon casting ingot method, utilizes the crystal of non-silicon matter to come growing single-crystal or macromeritic polysilicon as the mode of seed crystal in container, comprising:
On inner surface of container, place at least one heterogeneous seed crystal, the crystal that described heterogeneous seed crystal is non-silicon seed;
The molten silicon that the heterogeneous seed crystal of placing by cooling and described inner surface of container contacts, controls described molten silicon long brilliant in to form target silicon ingot.
Preferably, the molten silicon that the described heterogeneous seed crystal of placing by cooling and described inner surface of container contacts, control described molten silicon long brilliant in further to comprise before formation target silicon ingot:
Above heterogeneous seed crystal in described container, add silicon raw material, and add doping agent according to resistivity demand;
Control is heated described container, makes the complete melting of silicon raw material in described container and described heterogeneous seed crystal incomplete fusion.
Preferably, the molten silicon that the described heterogeneous seed crystal of placing by cooling and described inner surface of container contacts, control described molten silicon long brilliant in further to comprise before formation target silicon ingot:
In another container by silicon raw material and the doping agent melting added according to resistivity demand;
Described in described molten silicon is transferred to, be placed with in the container of heterogeneous seed crystal and contact with described heterogeneous seed crystal, and control the complete melting of silicon raw material in the container that temperature is placed with heterogeneous seed crystal described in making and described heterogeneous seed crystal incomplete fusion.
Preferably, the molten silicon that the described heterogeneous seed crystal of placing by cooling and described inner surface of container contacts, control the long crystalline substance of described molten silicon and specifically comprise to form target silicon ingot:
Control the temperature of molten silicon above described heterogeneous seed crystal, make described molten silicon form a transition layer in described heterogeneous seed crystal face, described transition layer is after molten silicon contacts with heterogeneous seed crystal in long brilliant process, at the long one deck crystal of heterogeneous seed crystal face;
Control the temperature of molten silicon above described heterogeneous seed crystal, the transition layer forming according to described heterogeneous seed crystal face completes follow-up long crystalline substance and forms target silicon ingot.
Preferably, described at least one heterogeneous seed crystal of placing on inner surface of container specifically comprises:
On bottom surface in described container, place at least one heterogeneous seed crystal; Or
Each face on bottom surface in described container and any one or more side is placed at least one heterogeneous seed crystal; Or
On each face of any one or more sides in described container, place at least one heterogeneous seed crystal.
Preferably, in container, be placed with while at least thering is two heterogeneous seed crystals on same of heterogeneous seed crystal the crystal that described heterogeneous seed crystal is same substance or the crystal of different substances.
Preferably, further comprise:
When the heterogeneous seed crystal of described same is same substance crystal, in described container, be placed with at least two heterogeneous seed crystals on same of heterogeneous seed crystal by same crystal orientation close-packed arrays; Or
In described container, be placed with at least two heterogeneous seed crystals on same of heterogeneous seed crystal by different crystal orientations close-packed arrays.
Preferably, further comprise:
When the heterogeneous seed crystal of described same is different substances crystal, in described container, be placed with at least two heterogeneous seed crystals on same of heterogeneous seed crystal, the heterogeneous seed crystal of every kind of same substance crystal by same crystal orientation close-packed arrays in identical region; Or
In described container, be placed with at least two heterogeneous seed crystals on same of heterogeneous seed crystal, the heterogeneous seed crystal of every kind of same substance crystal is pressed different crystal orientations close-packed arrays in identical region.
Preferably, described heterogeneous seed crystal is the crystal that fusing point is not less than silicon fusing point.
Preferably, described heterogeneous seed crystal is the crystal that lattice mates with the lattice of described silicon.
Preferably, the crystal that the thermal expansivity of described heterogeneous seed crystal and the thermal expansivity of described silicon are more approaching, and/or described heterogeneous seed crystal is the crystal that intensity is higher.
Preferably, described heterogeneous seed crystal comprises:
The heterogeneous seed crystal of single crystal and the heterogeneous seed crystal of polycrystal with the large crystal grain of heterocrystal.
Preferably, described heterogeneous seed crystal specifically comprises:
Sapphire, spinel, silicon-dioxide, cerium dioxide, gallium phosphide and silicon carbide.
Preferably, in described container, be placed with face that the heterogeneous seed crystal on same of heterogeneous seed crystal contacts with described molten silicon substantially in same plane.
Preferably, the container that is placed with heterogeneous seed crystal described in is quartz crucible or plumbago crucible or silicon nitride crucible.
A kind of silicon ingot of the embodiment of the present invention, the silicon ingot of described silicon ingot for obtaining by above-described crystalline silicon casting ingot method.
The embodiment of the invention discloses a kind of crystalline silicon casting ingot method, the method comprises: on inner surface of container, place at least one heterogeneous seed crystal, the crystal that described heterogeneous seed crystal is non-silicon seed; The molten silicon that the heterogeneous seed crystal of placing by cooling and described inner surface of container contacts, controls described molten silicon long brilliant in to form target silicon ingot.Realized and in container, utilized the crystal of non-silicon matter to come growing single-crystal or macromeritic polysilicon as the mode of seed crystal, because heterogeneous seed crystal and silicon crystal are the material with different physicochemical properties, temperature while easily controlling ingot casting and make heterogeneous seed crystal be unlikely to complete melting, utilize segregative character between different substances simultaneously, reach the object that production process was recycled and simplified to heterogeneous seed crystal.
Accompanying drawing explanation
In order to be illustrated more clearly in the embodiment of the present invention or technical scheme of the prior art, to the accompanying drawing of required use in embodiment or description of the Prior Art be briefly described below, apparently, accompanying drawing in the following describes is only some embodiments of the present invention, for those of ordinary skills, do not paying under the prerequisite of creative work, can also obtain according to these accompanying drawings other accompanying drawing.
Fig. 1 is the schema of the first embodiment of crystalline silicon casting ingot method of the present invention;
Fig. 2 is the schema of the second embodiment of crystalline silicon casting ingot method of the present invention;
Fig. 3 is the schema of the 3rd embodiment of crystalline silicon casting ingot method of the present invention;
Fig. 4 is provided with the schematic diagram of heterogeneous seed crystal on the bottom surface of one embodiment of the invention in container;
Fig. 5 is provided with the schematic diagram of heterogeneous seed crystal on the bottom surface of one embodiment of the invention in container and side;
Fig. 6 is provided with the schematic diagram of a kind of the first embodiment of heterogeneous seed crystal in container same of the present invention;
Fig. 7 is provided with the schematic diagram of a kind of the second embodiment of heterogeneous seed crystal in container same of the present invention;
Fig. 8 is arranged with the schematic diagram of the first embodiment of two kinds of heterogeneous seed crystals in container same of the present invention;
Fig. 9 is arranged with the schematic diagram of the second embodiment of two kinds of heterogeneous seed crystals in container same of the present invention;
Charging schematic diagram when Figure 10 is one embodiment of the invention employing directional solidification method ingot casting;
Schematic diagram when Figure 11 is one embodiment of the invention employing directional solidification method ingot casting after silicon raw materials melt;
Figure 12 is the schematic diagram that one embodiment of the invention adopts the brilliant process of directional solidification method ingot casting duration;
The schematic diagram of casting cycle when Figure 13 is one embodiment of the invention employing teeming practice ingot casting;
Figure 14 is the local schematic diagram amplifying of silicon ingot after the long crystalline substance of the heterogeneous seed crystal of the embodiment of the present invention completes.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is clearly and completely described, obviously, described embodiment is only the present invention's part embodiment, rather than whole embodiment.Embodiment based in the present invention, those of ordinary skills, not making the every other embodiment obtaining under creative work prerequisite, belong to the scope of protection of the invention.
For making object of the present invention, technical scheme and advantage clearer, referring to accompanying drawing, the embodiment of the present invention is further described.
It with reference to figure 1, is the schema of the first embodiment of crystalline silicon casting ingot method of the present invention.As shown in Figure 1, the method comprises the following steps:
Step S101 places at least one heterogeneous seed crystal on inner surface of container, the crystal that described heterogeneous seed crystal is non-silicon seed.
In this step, described at least one heterogeneous seed crystal of placing on inner surface of container, the crystal that described heterogeneous seed crystal is non-silicon seed, particularly, described container is a container that the fusing point material higher than silicon fusing point made, and described container is specifically as follows quartz crucible, plumbago crucible or silicon nitride crucible; The crystal that described heterogeneous seed crystal is non-silicon seed, described heterogeneous seed crystal specifically comprises sapphire (α-Al
2o
3), spinel (MgOAl2O3), silicon-dioxide (SiO2), cerium dioxide (CeO2), gallium phosphide (GaP) and silicon carbide (SiC), this is several specific embodiments in heterogeneous certainly, described heterogeneous seed crystal also comprises the crystal of other non-silicon.Preferred described heterogeneous seed crystal is the crystal that fusing point is not less than silicon fusing point, when contacting with molten silicon, be unlikely to melt completely like this, complete and utilize the method for directional freeze to produce silicon single crystal or there is the polysilicon of large crystal grain, and different easily separated according to physical properties between heterocrystal, thereby reach recycling; Simultaneously described heterogeneous seed crystal also can be for fusing point is lower than the fusing point of described silicon crystal, and the local temperature of accurately controlling described heterogeneous seed crystal; Further described heterogeneous seed crystal is the crystal that lattice mates with the lattice of described silicon, described lattice and the lattice of described silicon mate specifically comprise that the lattice of heterogeneous seed crystal and the lattice size of described silicon are close as much as possible and crystal orientation more consistent etc., be beneficial to the formation of silicon single crystal or macromeritic polysilicon; The more approaching crystal of the thermal expansivity of described heterogeneous seed crystal and the thermal expansivity of described silicon further, and/or described heterogeneous seed crystal is the crystal that intensity is higher, it is as much as possible little that the more approaching crystal of the thermal expansivity of described heterogeneous seed crystal and the thermal expansivity of described silicon is beneficial in silicon ingot that heterogeneous seed crystal obtains after to the long crystalline substance of molten silicon stress, and described heterogeneous seed crystal is that crystal that intensity is higher is for reducing as far as possible the degree of damage of described stress to described heterogeneous seed crystal.
Described at least one heterogeneous seed crystal of placing on inner surface of container, is specifically included in and on the bottom surface in described container, places at least one heterogeneous seed crystal; Or each face on the bottom surface in described container and any one or more side is placed at least one heterogeneous seed crystal; Or on each face of any one or more sides in described container, place at least one heterogeneous seed crystal.Further, in described container, be placed with while at least thering is two heterogeneous seed crystals on same of heterogeneous seed crystal the crystal that described heterogeneous seed crystal is same substance or the crystal of different substances; When the heterogeneous seed crystal of described same is same substance crystal, in described container, be placed with at least two heterogeneous seed crystals on same of heterogeneous seed crystal by being placed with at least two heterogeneous seed crystals on same of heterogeneous seed crystal in same crystal orientation close-packed arrays or described container by different crystal orientations close-packed arrays.When the heterogeneous seed crystal of described same is different substances crystal, in described container, be placed with at least two heterogeneous seed crystals on same of heterogeneous seed crystal, the heterogeneous seed crystal of every kind of same substance crystal by same crystal orientation close-packed arrays in identical regional extent; Or in described container, being placed with at least two heterogeneous seed crystals on same of heterogeneous seed crystal, the heterogeneous seed crystal of every kind of same substance crystal is pressed different crystal orientations close-packed arrays in identical regional extent.The heterogeneous seed crystal and the heterogeneous seed crystal of polycrystal with the large crystal grain of heterocrystal that at the described crystal as heterogeneous seed crystal, comprise single crystal.Preferably, in described container, be placed with face that the heterogeneous seed crystal on same of heterogeneous seed crystal contacts with described molten silicon substantially in same plane.
Step S102, the molten silicon that the heterogeneous seed crystal of placing by cooling and described inner surface of container contacts, controls described molten silicon long brilliant in to form target silicon ingot.
In this step, the molten silicon that the described heterogeneous seed crystal of placing by cooling and described inner surface of container contacts, control described molten silicon long brilliant in to form target silicon ingot, particularly, by controlling the temperature of molten silicon above described heterogeneous seed crystal, first make described molten silicon form a transition layer on the face contacting with described heterogeneous seed crystal face, described transition layer is after molten silicon contacts with heterogeneous seed crystal in long brilliant process, at the long one deck crystal of heterogeneous seed crystal face; Control the temperature of molten silicon above described heterogeneous seed crystal, on the basis of the transition layer forming in described heterogeneous seed crystal face, complete the follow-up long crystalline substance of molten silicon in described container, and forming target silicon ingot, described target silicon ingot is specifically as follows silicon single crystal and has the polysilicon of large crystal grain.Technique after the brilliant process of described concrete length and long crystalline substance is same as the prior art, at this, just repeats no more.
The embodiment of the invention discloses a kind of crystalline silicon casting ingot method, the method comprises: on inner surface of container, place at least one heterogeneous seed crystal, the crystal that described heterogeneous seed crystal is non-silicon seed; The molten silicon that the heterogeneous seed crystal of placing by cooling and described inner surface of container contacts, controls described molten silicon long brilliant in to form target silicon ingot.Realized and in container, utilized the crystal of non-silicon matter to come growing single-crystal or macromeritic polysilicon as the mode of seed crystal, because heterogeneous seed crystal and silicon crystal are the material with different physicochemical properties, temperature while easily controlling ingot casting and make heterogeneous seed crystal be unlikely to complete melting, utilize segregative character between different substances simultaneously, reach the object that production process was recycled and simplified to heterogeneous seed crystal.
With reference to figure 2, it is the schema of the second embodiment of crystalline silicon casting ingot method of the present invention.As shown in Figure 2, the method comprises the following steps:
Step S201 is corresponding and identical one by one with the method steps S101 described in described Fig. 1, at this, does not just add and repeats.
Step S202, adds silicon raw material above the heterogeneous seed crystal in described container, and adds doping agent according to resistivity demand.
Step S203, controls described container heating, makes the complete melting of silicon raw material in described container and described heterogeneous seed crystal incomplete fusion.
Step S204 is corresponding and identical one by one with the method steps S102 described in described Fig. 1, at this, does not just add and repeats.
The embodiment of the invention discloses a kind of crystalline silicon casting ingot method, the method comprises: on inner surface of container, place at least one heterogeneous seed crystal, the crystal that described heterogeneous seed crystal is non-silicon seed; The molten silicon that the heterogeneous seed crystal of placing by cooling and described inner surface of container contacts, controls described molten silicon long brilliant in to form target silicon ingot.Realized and in container, utilized the crystal of non-silicon matter to come growing single-crystal or macromeritic polysilicon as the mode of seed crystal, because heterogeneous seed crystal and silicon crystal are the material with different physicochemical properties, temperature while easily controlling ingot casting and make heterogeneous seed crystal be unlikely to complete melting, utilize segregative character between different substances simultaneously, reach the object that production process was recycled and simplified to heterogeneous seed crystal.
With reference to figure 3, it is the schema of the 3rd embodiment of crystalline silicon casting ingot method of the present invention.As shown in Figure 3, the method comprises the following steps:
Step S301 is corresponding and identical one by one with the method steps S101 described in described Fig. 1, at this, does not just add and repeats.
Step S302, in another container by silicon raw material and the doping agent melting added according to resistivity demand.
Step S303, is placed with described in described molten silicon is transferred in the container of heterogeneous seed crystal and contacts with described heterogeneous seed crystal, and controls the complete melting of silicon raw material in the container that temperature is placed with heterogeneous seed crystal described in making and described heterogeneous seed crystal incomplete fusion.
Step S304 is corresponding and identical one by one with the method steps S102 described in described Fig. 1, at this, does not just add and repeats.
The embodiment of the invention discloses a kind of crystalline silicon casting ingot method, the method comprises: on inner surface of container, place at least one heterogeneous seed crystal, the crystal that described heterogeneous seed crystal is non-silicon seed; The molten silicon that the heterogeneous seed crystal of placing by cooling and described inner surface of container contacts, controls described molten silicon long brilliant in to form target silicon ingot.Realized and in container, utilized the crystal of non-silicon matter to come growing single-crystal or macromeritic polysilicon as the mode of seed crystal, because heterogeneous seed crystal and silicon crystal are the material with different physicochemical properties, temperature while easily controlling ingot casting and make heterogeneous seed crystal be unlikely to complete melting, utilize segregative character between different substances simultaneously, reach the object that production process was recycled and simplified to heterogeneous seed crystal.
Lifting specific embodiment is below illustrated summary of the invention of the present invention, it should be noted that, embodiment is the part embodiment that the present invention comprises below, for those of ordinary skills, do not paying under the prerequisite of creative work, the embodiment that obtains other according to these embodiments still belongs to the embodiment that the present invention is contained.
With reference to figure 4, be on the bottom surface of one embodiment of the invention in container, to be provided with the schematic diagram of heterogeneous seed crystal, as shown in Figure 4, heterogeneous seed crystal 12 is placed in to the bottom surface of container 11, described container 11 is specifically as follows quartz crucible, plumbago crucible or silicon nitride crucible.In described container 11, not only heterogeneous seed crystal 12 can be set in the bottom surface of described container 11, also heterogeneous seed crystal 12 can be set on a plurality of of described container 11 simultaneously.With reference to figure 5, be on the bottom surface of one embodiment of the invention in container and side, to be provided with the schematic diagram of heterogeneous seed crystal, certainly the just the present invention shown in above Fig. 4 and Fig. 5 arranges two specific embodiments of heterogeneous seed crystal 12 on container 11 surfaces, while specifically arranging, can heterogeneous seed crystal 12 be set on one or more internal surfaces of described container 11 as required, reach production object.Preferably, while heterogeneous seed crystal 12 being set on described container 11 surfaces, as far as possible by described same lip-deep heterogeneous seed crystal 12, the one end on described container 11 surfaces is in the same plane dorsad, is beneficial to the later stage long brilliant.
With reference to figure 6, be in container same of the present invention, to be provided with the schematic diagram of a kind of the first embodiment of heterogeneous seed crystal; With reference to figure 7, be in container same of the present invention, to be provided with the schematic diagram of a kind of the second embodiment of heterogeneous seed crystal, as shown in Figure 6, on container 11 surfaces, be provided with on each surface of heterogeneous seed crystal 12, be provided with the heterogeneous seed crystal 12 of same by same crystal orientation close-packed arrays, it should be noted that the identical direction of arrow of each seed crystal in figure is for representing identical crystal orientation, but do not represent the crystal orientation of concrete seed crystal; As shown in Figure 7, on container 11 surfaces, be provided with on each surface of heterogeneous seed crystal 12, be provided with the heterogeneous seed crystal 12 of same by different crystal orientations close-packed arrays, it should be noted that the identical direction of arrow of each seed crystal in figure is for representing identical crystal orientation, but do not represent the crystal orientation of concrete seed crystal.Above Fig. 6 and Fig. 7 are represented is just provided with a kind of concrete two embodiments of heterogeneous seed crystal on same of container 11, concrete set-up mode can arrange as required, no longer exhaustive at this, the shape that it should be noted that described each heterogeneous seed crystal 12 not only comprises illustrated square, can be also other regular geometric figure or irregular geometric figures etc. simultaneously.
With reference to figure 8, be in container same of the present invention, to be arranged with the schematic diagram of the first embodiment of two kinds of heterogeneous seed crystals; With reference to figure 9, be in container same of the present invention, to be arranged with the schematic diagram of the second embodiment of two kinds of heterogeneous seed crystals; As shown in Figure 8, be provided with heterogeneous seed crystal 121 and heterogeneous seed crystal 122 on the same surface of container 11, described identical heterogeneous seed crystal is pressed same crystal orientation close-packed arrays in identical region; It should be noted that the identical direction of arrow of each seed crystal in figure is for representing identical crystal orientation, but do not represent the crystal orientation of concrete seed crystal; As shown in Figure 9, be provided with heterogeneous seed crystal 121 and heterogeneous seed crystal 122 on the same surface of container 11, described identical heterogeneous seed crystal is pressed different crystal orientations close-packed arrays in identical region; It should be noted that the identical direction of arrow of each seed crystal in figure is for representing identical crystal orientation, but do not represent the crystal orientation of concrete seed crystal.Above Fig. 8 and Fig. 9 are represented is just provided with concrete two embodiments of two kinds of heterogeneous seed crystals on same of container 11, concrete set-up mode can arrange as required, for example, the heterogeneous seed crystal 12 of three and above kind can be set on same surface, described identical heterogeneous seed crystal 12 can be with crystal orientation or different crystal orientations close-packed arrays in identical region, just no longer exhaustive at this, the shape that it should be noted that described each heterogeneous seed crystal 12 not only comprises illustrated square, can be also simultaneously other regular geometric figure or irregular geometric figures etc.Simultaneously, if while being provided with heterogeneous seed crystal 12 on a plurality of surfaces of described container 11, can identical heterogeneous seed crystal 12 be all set on each surface of heterogeneous seed crystal 12 being provided with, or of the same race or multiple heterogeneous seed crystal 12 be set respectively being provided with on each different surface of heterogeneous seed crystal 12.
Charging schematic diagram while being one embodiment of the invention employing directional solidification method ingot casting with reference to Figure 10; Schematic diagram while being one embodiment of the invention employing directional solidification method ingot casting with reference to Figure 11 after silicon raw materials melt; With reference to Figure 12, it is the schematic diagram that one embodiment of the invention adopts the brilliant process of directional solidification method ingot casting duration; As shown in Figure 10 to 12, what above three figure described is in the bottom of described container 11, to be provided with heterogeneous seed crystal 12, uses directional solidification method to carry out the process of ingot casting.Described ingot casting process comprises that when filling with substance is provided with heterogeneous seed crystal 12 in the bottom of described container 11, in described container, above 11 heterogeneous seed crystal 12, adds silicon raw material 13, and adds doping agent according to resistivity demand; The described container 11 that silicon raw material 13 is housed is heated, and control described container heating, make the silicon raw material 13 in described container be melt into molten silicon 14 completely and described heterogeneous seed crystal 12 incomplete fusions; The molten silicon 14 that the heterogeneous seed crystal 12 of placing by cooling and described container 11 internal surfaces contacts, controls described molten silicon 14 long brilliant in to form target silicon ingot 15.Further the present invention also comprises and utilizes teeming practice to carry out ingot casting, with reference to Figure 13, is the casting cycle schematic diagram of one embodiment of the invention while adopting teeming practice ingot casting.As shown in figure 13, what present is that the interior interpolation silicon of container 16 raw material 13 of heterogeneous seed crystal 12 be not set in addition, and add doping agent according to resistivity demand, by heating, will be in silicon raw material 13(figure do not show) be melt into molten silicon 14, described in described molten silicon 14 is transferred to, be placed with in the container 11 of heterogeneous seed crystal and contact with described heterogeneous seed crystal 12, and control the complete melting of silicon raw material in the container 11 that temperature is placed with heterogeneous seed crystal 12 described in making and described heterogeneous seed crystal 12 incomplete fusions; The molten silicon 14 that the heterogeneous seed crystal 12 of placing by cooling and described container 11 internal surfaces contacts, controls described molten silicon 14 long brilliant in to form demonstration in target silicon ingot 15(figure).
With reference to Figure 14, it is the local schematic diagram amplifying of silicon ingot after the long crystalline substance of the heterogeneous seed crystal of the embodiment of the present invention completes.As shown in figure 14, the position that contacts with described heterogeneous seed crystal 12 in the silicon ingot 15 of the long crystalline substance of described heterogeneous seed crystal 12 after completing has a transition layer 153.Described transition layer 153 is that molten silicon 14 contacts with heterogeneous seed crystal 12 in long brilliant process, due to long brilliant between heterogeneous, makes molten silicon 14 at the long one deck in the surface contacting with heterogeneous seed crystal 12, have the crystal of transitional function; After described transition layer 153 forms, control the temperature of molten silicon 14 above described heterogeneous seed crystal 12, by follow-up long brilliant, and form target silicon ingot 15.
In the embodiment that above Fig. 4 to Figure 14 specifically exemplifies and the embodiment comprising, described heterogeneous seed crystal specifically comprises sapphire, spinel, silicon-dioxide, cerium dioxide, gallium phosphide and silicon carbide, certainly this is several specific embodiments in heterogeneous, and described heterogeneous seed crystal also comprises the crystal of other non-silicon.Preferred described heterogeneous seed crystal is the crystal that fusing point is not less than silicon fusing point, when contacting with molten silicon, be unlikely to melt completely like this, complete and utilize the method for directional freeze to produce silicon single crystal or there is the polysilicon of large crystal grain, and different easily separated according to physical properties between heterocrystal, thereby reach recycling; Simultaneously described heterogeneous seed crystal also can be for fusing point is lower than the fusing point of described silicon crystal, and the local temperature of accurately controlling described heterogeneous seed crystal; Further described heterogeneous seed crystal is the crystal that lattice mates with the lattice of described silicon, described lattice and the lattice of described silicon mate specifically comprise that the lattice of heterogeneous seed crystal and the lattice size of described silicon are close as much as possible and crystal orientation more consistent etc., be beneficial to the formation of silicon single crystal or macromeritic polysilicon; The more approaching crystal of the thermal expansivity of described heterogeneous seed crystal and the thermal expansivity of described silicon further, and/or described heterogeneous seed crystal is the crystal that intensity is higher, it is as much as possible little that the more approaching crystal of the thermal expansivity of described heterogeneous seed crystal and the thermal expansivity of described silicon is beneficial in silicon ingot that heterogeneous seed crystal obtains after to the long crystalline substance of molten silicon stress, and described heterogeneous seed crystal is that crystal that intensity is higher is for reducing as far as possible the degree of damage of described stress to described heterogeneous seed crystal.Described, as heterogeneous seed crystal described in the crystal of heterogeneous seed crystal, comprise: the heterogeneous seed crystal of single crystal and the heterogeneous seed crystal of polycrystal with the large crystal grain of heterocrystal.Wherein, described heterogeneous seed crystal can utilize the silicon ingot that the long crystalline substance of heterogeneous seed crystal obtains to cut and make through evolution and line.
Further the present invention also comprises that crystalline silicon casting ingot method described in Fig. 1 to Fig. 3 and Fig. 4 to Figure 14 institute are for directly obtaining in specific embodiment and the embodiment comprising or for those of ordinary skills, do not paying the silicon ingot obtaining under the prerequisite of creative work, described silicon ingot is by being silicon single crystal or the polysilicon with large crystal grain.The preparation method of described silicon ingot is consistent with crystalline silicon casting ingot method and the described method of Fig. 4 to Figure 14 described in Fig. 1 to Fig. 3, at this, just repeats no more.
The embodiment of the invention discloses a kind of crystalline silicon casting ingot method, the method comprises: on inner surface of container, place at least one heterogeneous seed crystal, the crystal that described heterogeneous seed crystal is non-silicon seed; The molten silicon that the heterogeneous seed crystal of placing by cooling and described inner surface of container contacts, controls described molten silicon long brilliant in to form target silicon ingot.Realized and in container, utilized the crystal of non-silicon matter to come growing single-crystal or macromeritic polysilicon as the mode of seed crystal, because heterogeneous seed crystal and silicon crystal are the material with different physicochemical properties, temperature while easily controlling ingot casting and make heterogeneous seed crystal be unlikely to complete melting, utilize segregative character between different substances simultaneously, reach the object that production process was recycled and simplified to heterogeneous seed crystal.
Above disclosed is only preferred embodiment of the present invention, can not limit with this interest field of the present invention, and the equivalent variations of therefore doing according to the claims in the present invention, still belongs to the scope that the present invention is contained.
Claims (15)
1. a crystalline silicon casting ingot method, is characterized in that, utilizes the crystal of non-silicon matter to come growing single-crystal or macromeritic polysilicon as the mode of seed crystal in container, comprising:
On inner surface of container, place at least one heterogeneous seed crystal, the crystal that described heterogeneous seed crystal is non-silicon seed;
The molten silicon that the heterogeneous seed crystal of placing by cooling and described inner surface of container contacts, controls described molten silicon long brilliant in to form target silicon ingot;
Described at least one heterogeneous seed crystal of placing on inner surface of container specifically comprises:
On bottom surface in described container, place at least one heterogeneous seed crystal; Or
Each face on bottom surface in described container and any one or more side is placed at least one heterogeneous seed crystal; Or
On each face of any one or more sides in described container, place at least one heterogeneous seed crystal.
2. the method for claim 1, is characterized in that, the molten silicon that the described heterogeneous seed crystal of placing by cooling and described inner surface of container contacts is controlled described molten silicon long brilliant in further to comprise before formation target silicon ingot:
Above heterogeneous seed crystal in described container, add silicon raw material, and add doping agent according to resistivity demand;
Control is heated described container, makes the complete melting of silicon raw material in described container and described heterogeneous seed crystal incomplete fusion.
3. the method for claim 1, is characterized in that, the molten silicon that the described heterogeneous seed crystal of placing by cooling and described inner surface of container contacts is controlled described molten silicon long brilliant in further to comprise before formation target silicon ingot:
In another container by silicon raw material and the doping agent melting added according to resistivity demand;
Described in described molten silicon is transferred to, be placed with in the container of heterogeneous seed crystal and contact with described heterogeneous seed crystal, and control the complete melting of silicon raw material in the container that temperature is placed with heterogeneous seed crystal described in making and described heterogeneous seed crystal incomplete fusion.
4. the method for claim 1, is characterized in that, the molten silicon that the described heterogeneous seed crystal of placing by cooling and described inner surface of container contacts is controlled the long crystalline substance of described molten silicon and specifically comprised to form target silicon ingot:
Control the temperature of molten silicon above described heterogeneous seed crystal, make described molten silicon form a transition layer in described heterogeneous seed crystal face, described transition layer is after molten silicon contacts with heterogeneous seed crystal in long brilliant process, at the long one deck crystal of heterogeneous seed crystal face;
Control the temperature of molten silicon above described heterogeneous seed crystal, the transition layer forming according to described heterogeneous seed crystal face completes follow-up long crystalline substance and forms target silicon ingot.
5. the method as described in claim 1 to 4 any one, is characterized in that: in container, be placed with while at least having two heterogeneous seed crystals on same of heterogeneous seed crystal the crystal that described heterogeneous seed crystal is same substance or the crystal of different substances.
6. method as claimed in claim 5, is characterized in that, further comprises:
When the heterogeneous seed crystal of described same is same substance crystal, in described container, be placed with at least two heterogeneous seed crystals on same of heterogeneous seed crystal by same crystal orientation close-packed arrays; Or
In described container, be placed with at least two heterogeneous seed crystals on same of heterogeneous seed crystal by different crystal orientations close-packed arrays.
7. method as claimed in claim 5, is characterized in that, further comprises:
When the heterogeneous seed crystal of described same is different substances crystal, in described container, be placed with at least two heterogeneous seed crystals on same of heterogeneous seed crystal, the heterogeneous seed crystal of every kind of same substance crystal by same crystal orientation close-packed arrays in identical region; Or
In described container, be placed with at least two heterogeneous seed crystals on same of heterogeneous seed crystal, the heterogeneous seed crystal of every kind of same substance crystal is pressed different crystal orientations close-packed arrays in identical region.
8. method as claimed in claim 1, is characterized in that: described heterogeneous seed crystal is the crystal that fusing point is not less than silicon fusing point.
9. method as claimed in claim 8, is characterized in that: described heterogeneous seed crystal is the crystal that lattice mates with the lattice of described silicon.
10. method as claimed in claim 9, is characterized in that: the crystal that the thermal expansivity of described heterogeneous seed crystal and the thermal expansivity of described silicon are more approaching, and/or described heterogeneous seed crystal is the crystal that intensity is higher.
11. methods as claimed in claim 10, is characterized in that, described heterogeneous seed crystal comprises:
The heterogeneous seed crystal of single crystal and the heterogeneous seed crystal of polycrystal with the large crystal grain of heterocrystal.
12. methods as claimed in claim 11, is characterized in that, described heterogeneous seed crystal specifically comprises:
Sapphire, spinel, silicon-dioxide, cerium dioxide, gallium phosphide and silicon carbide.
13. methods as claimed in claim 12, is characterized in that: in described container, be placed with face that the heterogeneous seed crystal on same of heterogeneous seed crystal contacts with described molten silicon substantially in same plane.
14. methods as claimed in claim 13, is characterized in that, described in be placed with heterogeneous seed crystal container be quartz crucible or plumbago crucible or silicon nitride crucible.
15. 1 kinds of silicon ingots, is characterized in that: described silicon ingot is the silicon ingot that the crystalline silicon casting ingot method described in claim 1 to 14 any one obtains.
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| CN103088418B (en) * | 2011-11-01 | 2015-07-08 | 昆山中辰矽晶有限公司 | Crystalline silicon ingot and its making method |
| CN102425008A (en) * | 2011-12-08 | 2012-04-25 | 常州天合光能有限公司 | Method for preparing large-grain ingot polycrystal silicon |
| US9562304B2 (en) | 2012-04-01 | 2017-02-07 | Jiang Xi Sai Wei Ldk Solar Hi-Tech Co., Ltd. | Polycrystalline silicon ingot, preparation method thereof, and polycrystalline silicon wafer |
| CN102776561B (en) * | 2012-04-01 | 2017-12-15 | 江西赛维Ldk太阳能高科技有限公司 | Polycrystal silicon ingot and preparation method thereof, polysilicon chip and crucible used for polycrystalline silicon ingot casting |
| GB2502102A (en) * | 2012-05-16 | 2013-11-20 | Rec Wafer Norway As | Improved production of monocrystalline silicon |
| CN102732962B (en) * | 2012-06-06 | 2013-06-26 | 海润光伏科技股份有限公司 | Method for casting efficient large-crystal-grain silicon ingots |
| CN103741215B (en) * | 2014-01-28 | 2016-01-20 | 西安华晶电子技术股份有限公司 | A kind of casting ingot method of granulated polycrystalline silicon |
| CN104630884B (en) * | 2015-01-23 | 2017-06-23 | 东海晶澳太阳能科技有限公司 | A kind of fine melt efficient polycrystalline silicon ingot casting seed crystal and its preparation method and application |
| CN104790026B (en) * | 2015-04-30 | 2019-11-29 | 江西赛维Ldk太阳能高科技有限公司 | A kind of recycling method casting class monocrystalline seed crystal |
| TWI557281B (en) * | 2015-07-17 | 2016-11-11 | Sino American Silicon Prod Inc | Polycrystalline silicon ingot, polycrystalline silicon brick and polycrystalline silicon wafer |
| CN109112618A (en) * | 2017-06-23 | 2019-01-01 | 镇江仁德新能源科技有限公司 | A kind of directional solidification growth device and method of solar energy polycrystalline silicon |
| CN108486652A (en) * | 2018-04-19 | 2018-09-04 | 常熟华融太阳能新型材料有限公司 | A kind of high-efficiency seed crystal layer reducing polycrystalline silicon ingot casting dislocation |
| CN113026092B (en) * | 2019-12-09 | 2023-05-12 | 苏州阿特斯阳光电力科技有限公司 | Seed crystal layer structure for crystalline silicon ingot casting and preparation method of crystalline silicon ingot |
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