CN102150236A - 借助于预选中间体的高速薄膜沉积 - Google Patents

借助于预选中间体的高速薄膜沉积 Download PDF

Info

Publication number
CN102150236A
CN102150236A CN2009801358105A CN200980135810A CN102150236A CN 102150236 A CN102150236 A CN 102150236A CN 2009801358105 A CN2009801358105 A CN 2009801358105A CN 200980135810 A CN200980135810 A CN 200980135810A CN 102150236 A CN102150236 A CN 102150236A
Authority
CN
China
Prior art keywords
film material
carrier gas
deposition
plasma
precursor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN2009801358105A
Other languages
English (en)
Chinese (zh)
Inventor
S·奥维辛斯基
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ovshinsky Innovation LLC
Original Assignee
Ovshinsky Innovation LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ovshinsky Innovation LLC filed Critical Ovshinsky Innovation LLC
Publication of CN102150236A publication Critical patent/CN102150236A/zh
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/452—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • C23C16/545—Apparatus specially adapted for continuous coating for coating elongated substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Photovoltaic Devices (AREA)
CN2009801358105A 2008-09-12 2009-09-10 借助于预选中间体的高速薄膜沉积 Pending CN102150236A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/209,699 2008-09-12
US12/209,699 US8252112B2 (en) 2008-09-12 2008-09-12 High speed thin film deposition via pre-selected intermediate
PCT/US2009/056445 WO2010030729A2 (en) 2008-09-12 2009-09-10 High speed thin film deposition via pre-selected intermediate

Publications (1)

Publication Number Publication Date
CN102150236A true CN102150236A (zh) 2011-08-10

Family

ID=42005730

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2009801358105A Pending CN102150236A (zh) 2008-09-12 2009-09-10 借助于预选中间体的高速薄膜沉积

Country Status (6)

Country Link
US (1) US8252112B2 (https=)
EP (1) EP2327087A2 (https=)
JP (1) JP2012502504A (https=)
KR (1) KR20110053349A (https=)
CN (1) CN102150236A (https=)
WO (1) WO2010030729A2 (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103022178A (zh) * 2011-09-23 2013-04-03 吉富新能源科技(上海)有限公司 利用四氟化硅制作高效率微晶硅薄膜太阳能电池
CN104152864A (zh) * 2014-08-22 2014-11-19 中国科学院宁波材料技术与工程研究所 硅薄膜的制备方法

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9177756B2 (en) 2011-04-11 2015-11-03 Lam Research Corporation E-beam enhanced decoupled source for semiconductor processing
US8900403B2 (en) * 2011-05-10 2014-12-02 Lam Research Corporation Semiconductor processing system having multiple decoupled plasma sources
US9111728B2 (en) 2011-04-11 2015-08-18 Lam Research Corporation E-beam enhanced decoupled source for semiconductor processing
US8980046B2 (en) 2011-04-11 2015-03-17 Lam Research Corporation Semiconductor processing system with source for decoupled ion and radical control
US8900402B2 (en) 2011-05-10 2014-12-02 Lam Research Corporation Semiconductor processing system having multiple decoupled plasma sources
US20130272928A1 (en) * 2012-04-12 2013-10-17 Devi Shanker Misra Apparatus for the deposition of diamonds by microwave plasma chemical vapour deposition process and substrate stage used therein
US10319872B2 (en) 2012-05-10 2019-06-11 International Business Machines Corporation Cost-efficient high power PECVD deposition for solar cells
EP2989442A4 (en) 2013-07-09 2016-12-28 Halliburton Energy Services Inc INTEGRATED COMPUTING ELEMENTS HAVING SELECTIVE FREQUENCY SURFACE
BR112015028910A2 (pt) 2013-07-09 2017-07-25 Halliburton Energy Services Inc elementos computacionais integrados com filtros espectrais lateralmente distribuídos
WO2015099707A1 (en) 2013-12-24 2015-07-02 Halliburton Energy Services, Inc. Fabrication of critical layers of integrated computational elements
EP2901135B1 (en) 2013-12-24 2016-08-24 Halliburton Energy Services, Inc. Real-time monitoring of fabrication of integrated computational elements
WO2015099706A1 (en) 2013-12-24 2015-07-02 Halliburton Energy Services, Inc. Adjusting fabrication of integrated computational elements
EP2926116A4 (en) 2013-12-24 2016-11-30 Halliburton Energy Services Inc IN-SITU MONITORING OF THE MANUFACTURE OF INTEGRATED COMPUTER ELEMENTS
US11274365B2 (en) 2013-12-30 2022-03-15 Halliburton Energy Services, Inc. Determining temperature dependence of complex refractive indices of layer materials during fabrication of integrated computational elements
US9371577B2 (en) 2013-12-31 2016-06-21 Halliburton Energy Services, Inc. Fabrication of integrated computational elements using substrate support shaped to match spatial profile of deposition plume
MX359196B (es) 2014-02-14 2018-09-19 Halliburton Energy Services Inc Espectroscopía in situ para el monitoreo de la fabricación de elementos computacionales integrados.
US9523786B2 (en) 2014-03-21 2016-12-20 Halliburton Energy Services, Inc. Monolithic band-limited integrated computational elements
US9708908B2 (en) 2014-06-13 2017-07-18 Halliburton Energy Services, Inc. Integrated computational element with multiple frequency selective surfaces
KR102075418B1 (ko) * 2015-04-14 2020-02-11 (주)디엔에프 니켈 함유 박막의 제조방법 및 이에 따라 제조된 니켈 함유 박막

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4504518A (en) * 1982-09-24 1985-03-12 Energy Conversion Devices, Inc. Method of making amorphous semiconductor alloys and devices using microwave energy
US4883686A (en) * 1988-05-26 1989-11-28 Energy Conversion Devices, Inc. Method for the high rate plasma deposition of high quality material
US5192393A (en) * 1989-05-24 1993-03-09 Hitachi, Ltd. Method for growing thin film by beam deposition and apparatus for practicing the same
US5788778A (en) * 1996-09-16 1998-08-04 Applied Komatsu Technology, Inc. Deposition chamber cleaning technique using a high power remote excitation source
JP2000096239A (ja) * 1998-09-21 2000-04-04 Tokuyama Corp 誘導結合型プラズマｃｖｄ方法及びそのための誘導結合型プラズマｃｖｄ装置
US6313017B1 (en) * 1999-01-26 2001-11-06 University Of Vermont And State Agricultural College Plasma enhanced CVD process for rapidly growing semiconductor films
US6305314B1 (en) * 1999-03-11 2001-10-23 Genvs, Inc. Apparatus and concept for minimizing parasitic chemical vapor deposition during atomic layer deposition
AU2002306436A1 (en) * 2001-02-12 2002-10-15 Asm America, Inc. Improved process for deposition of semiconductor films
US20060219170A1 (en) * 2002-01-11 2006-10-05 Energy Conversion Devices, Inc. Pore cathode for the mass production of photovoltaic devices having increased conversion efficiency
US6787185B2 (en) * 2002-02-25 2004-09-07 Micron Technology, Inc. Deposition methods for improved delivery of metastable species
ATE374936T1 (de) * 2003-07-25 2007-10-15 Lightwind Corp Verfahren und vorrichtung zur überwachung chemischer prozesse
US20080090022A1 (en) * 2006-10-12 2008-04-17 Energy Conversion Devices, Inc. High rate, continuous deposition of high quality amorphous, nanocrystalline, microcrystalline or polycrystalline materials

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103022178A (zh) * 2011-09-23 2013-04-03 吉富新能源科技(上海)有限公司 利用四氟化硅制作高效率微晶硅薄膜太阳能电池
CN104152864A (zh) * 2014-08-22 2014-11-19 中国科学院宁波材料技术与工程研究所 硅薄膜的制备方法

Also Published As

Publication number Publication date
JP2012502504A (ja) 2012-01-26
US20100068870A1 (en) 2010-03-18
WO2010030729A3 (en) 2010-05-06
EP2327087A2 (en) 2011-06-01
US8252112B2 (en) 2012-08-28
KR20110053349A (ko) 2011-05-20
WO2010030729A2 (en) 2010-03-18

Similar Documents

Publication Publication Date Title
CN102150236A (zh) 借助于预选中间体的高速薄膜沉积
US8222125B2 (en) Plasma deposition of amorphous semiconductors at microwave frequencies
US6645573B2 (en) Process for forming a microcrystalline silicon series thin film and apparatus suitable for practicing said process
US20130295709A1 (en) Method for manufacturing photoelectric conversion elements
EP2096679A1 (en) Method for manufacturing solar cell and apparatus for manufacturing solar cell
KR20090085695A (ko) 원자층 증착을 위한 기법
KR20100019414A (ko) 원자층 증착을 위한 기술
US7588957B2 (en) CVD process gas flow, pumping and/or boosting
US20080090022A1 (en) High rate, continuous deposition of high quality amorphous, nanocrystalline, microcrystalline or polycrystalline materials
US20090130337A1 (en) Programmed high speed deposition of amorphous, nanocrystalline, microcrystalline, or polycrystalline materials having low intrinsic defect density
US8048782B1 (en) Plasma deposition of amorphous semiconductors at microwave frequencies
US20090050058A1 (en) Programmed high speed deposition of amorphous, nanocrystalline, microcrystalline, or polycrystalline materials having low intrinsic defect density
US20100089318A1 (en) Remote Plasma Apparatus for Manufacturing Solar Cells
US8273641B2 (en) Plasma deposition of amorphous semiconductors at microwave frequencies
Menéndez et al. Deposition of thin films: PECVD process
US20120167963A1 (en) Photovoltaic Device Structure with Primer Layer
US8101245B1 (en) Plasma deposition of amorphous semiconductors at microwave frequencies
US20090031951A1 (en) Programmed high speed deposition of amorphous, nanocrystalline, microcrystalline, or polycrystalline materials having low intrinsic defect density
WO2012021325A2 (en) Plasma deposition of amorphous semiconductors at microwave frequencies
US20090053428A1 (en) Programmed high speed deposition of amorphous, nanocrystalline, microcrystalline, or polycrystalline materials having low intrinsic defect density
JPH07147245A (ja) 結晶質シリコン薄膜の形成方法
CN120129333A (zh) 一种硅片硼掺杂层的制备方法、硅片及装置系统
WO2010027841A2 (en) High speed deposition of materials having low defect density
JP2019085653A (ja) プラズマｃｖｄ法及びそれに用いる装置
JP2019081960A (ja) プラズマｃｖｄ装置及びプラズマｃｖｄ法

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
AD01 Patent right deemed abandoned

Effective date of abandoning: 20110810

C20 Patent right or utility model deemed to be abandoned or is abandoned