CN102149854A - A cathode and a method of forming a cathode - Google Patents

A cathode and a method of forming a cathode Download PDF

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Publication number
CN102149854A
CN102149854A CN2009801352039A CN200980135203A CN102149854A CN 102149854 A CN102149854 A CN 102149854A CN 2009801352039 A CN2009801352039 A CN 2009801352039A CN 200980135203 A CN200980135203 A CN 200980135203A CN 102149854 A CN102149854 A CN 102149854A
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China
Prior art keywords
negative electrode
conducting plates
bossing
plane
plane conducting
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Pending
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CN2009801352039A
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Chinese (zh)
Inventor
J·罗伯特·瑟斯佐
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Steelmore Holdingd Pty Ltd
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Steelmore Holdingd Pty Ltd
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Priority claimed from AU2008904675A external-priority patent/AU2008904675A0/en
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Publication of CN102149854A publication Critical patent/CN102149854A/en
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    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25CPROCESSES FOR THE ELECTROLYTIC PRODUCTION, RECOVERY OR REFINING OF METALS; APPARATUS THEREFOR
    • C25C7/00Constructional parts, or assemblies thereof, of cells; Servicing or operating of cells
    • C25C7/02Electrodes; Connections thereof

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electrolytic Production Of Metals (AREA)

Abstract

A cathode for receiving electro deposition of metal, the cathode comprising a planar conductive sheet and raised portions disposed on at least one surface of the planar conductive sheet, wherein the planar conductive sheet and the raised portions are integrally formed.

Description

Negative electrode and negative electrode formation method
Technical field
The present invention relates to a kind ofly be used for the electrolytic negative electrode of metal ion, and a kind of negative electrode formation method.Especially but not exclusively, the present invention relates to a kind of cobalt ion or nickel ion electrolytic negative electrode from solution of being particularly useful for.
Background technology
To obtain the solid metal product, is a kind of known technology that is used for precipitated phase to purer metal with the electrolysis of solution metal ion.In metal ion solution, put into solid state cathode, and apply electric current, the galvanic deposit of metal then can take place on the negative electrode to this negative electrode.Regularly negative electrode and the metallic product of adhering to are removed from solution.Then, the solid metal product is peeled off from negative electrode, and ideally, anticathode utilizes again.The material that is used for negative electrode has proper conductivity, so that metallic product can deposit.In addition, the material of negative electrode makes metallic product easily to remove from negative electrode, and metallic product can not separated prematurely.Preferably, adopt the negative electrode of robustness (robust), negative electrode can stand the circulation that deposits and peel off repeatedly like this, and each time between the circulation only a need anticathode carry out minimum processing.
Because the galvanic deposit of cobalt metal has the high internal stress of inherent, so the galvanic deposit of cobalt metal is particularly difficult.If the cobalt galvanic deposit to the stainless steel billet of standard flat that studs with the edge strip of a slab (edge strips) that insulate, can cause the cobalt metal sheet that isolating trend from the negative electrode is arranged prematurely.If remove the insulation edge strip of a slab, the cobalt metal is growth around negative electrode, and this has just solved the problem of metal premature disengagement from the negative electrode.But the cobalt metal is more difficult to be removed from negative electrode, and causes negative electrode destroyed possibly when removing metal.Negative electrode is destroyed, just may need continually each negative electrode to be keeped in repair, and this will cause the increase of factory's operation cost.
It is favourable that the cobalt galvanic deposit is many parts, because many parts the easier processing of cobalt galvanic deposit in the flow process of downstream.
In the prior art, for solving the scheme that a difficult problem proposed that exists in the cobalt galvanic deposit be, the mask that when making negative electrode one deck insulated is applied on the stainless steel blanket, and so, the conducting metal part of separating out just is exposed in the electrolytic solution.
The Patent publish of Canadian Patent numbers 1,078,324 a kind of like this electrode, wherein mask is a kind of epoxy coating.Current-carrying part caves in respect to masking layer.One of problem of this negative electrode is that masking film is exposed to electrolytic solution and peels off in the severe rugged environment in the program.Masking film is easy to fracture and damages, especially at the edge of current-carrying part.The destruction of masking film can cause forming metal deposition on failure area, and this causes masking film further to damage.So, negative electrode just can not use, and at set intervals, must peel off masking film from negative electrode, cleans negative electrode, and uses new masking film again.
The Patent publish of Canadian Patent numbers 1,066,657 a kind of negative electrode, wherein, metal disk is attached on flat board or the wiregrating.Insulating resin is filled into disk void area on every side.Alternatively, the indented wire of heavy gauge is attached on the assembly, resin is inserted void area, the knee that stays steel wire is uncovered.In these negative electrodes, current-carrying part or flush with on every side insulating resin, or exceed it.
Summary of the invention
The objective of the invention is to overcome or alleviate at least above-mentioned one or more problems, and provide usefulness for the human consumer or coml select.
In one form, although it needs not to be unique or embodiment the most widely, the invention provides a kind of negative electrode that is used to receive metal electrodeposition, this negative electrode comprises:
The plane conducting plates; And
Be positioned at least one lip-deep bossing of this plane conducting plates, wherein this plane conducting plates and this bossing are one-body molded.
This negative electrode can also comprise:
Be positioned at this bossing insulating material on every side, wherein the surface of this bossing exposes all the time.
Preferably, each this bossing all has plane upper surface, and wherein the shape of this plane upper surface is selected from: circular basically, square, rhombus or ingot shape (lozenge) basically basically basically.
In a preferred embodiment, bossing forms the front surface array and the rear surface array that is positioned at the rear surface of plane conducting plates of the front surface that is positioned at the plane conducting plates.Preferably, the front surface array has the configuration similar basically to the rear surface array.Alternatively, the front surface array has the configuration different basically with the rear surface array.
In another form, the invention provides a kind of method that is formed for receiving the negative electrode of metal electrodeposition, this method comprises:
The zone of using masking material to shelter the plane conducting plates is to form the conducting plates of having sheltered;
Apply chemical to the conducting plates of having sheltered, with chemical milling masking regional not, have integrally formed bossing and this plane conducting plates of etching area thereby form, this bossing is forming in the masking regional.
This method can also comprise:
Insulating material is applied to the etching area of plane conducting plates.
Further feature of the present invention will be by following detailed description easy to understand.
Description of drawings
For helping to understand the present invention and enable those skilled in the art to practical application the present invention,, the preferred embodiments of the present invention are only described by way of example below with reference to accompanying drawing.
Fig. 1 is the front elevation according to the negative electrode of the embodiment of the invention;
Fig. 2 A is the sectional view of negative electrode shown in Figure 1;
Fig. 2 B further comprises the sectional view of insulating material for Fig. 2 A;
Fig. 3 A is the sectional view of negative electrode according to another embodiment of the present invention;
Fig. 3 B further comprises the sectional view of insulating material for Fig. 3 A;
Fig. 4 is the front elevation of negative electrode according to another embodiment of the present invention;
Fig. 5 is the front elevation of negative electrode according to yet another embodiment of the invention;
Fig. 6 A is the synoptic diagram according to the first step of the method for the formation negative electrode of the embodiment of the invention;
Fig. 6 B is the synoptic diagram according to second step of the method for the formation negative electrode of the embodiment of the invention;
Fig. 6 C is the synoptic diagram according to the third step of the method for the formation negative electrode of the embodiment of the invention; And
Fig. 6 D is the synoptic diagram according to the 4th step of the method for the formation negative electrode of the embodiment of the invention.
Embodiment
Referring to Fig. 1, show front elevation according to the negative electrode 100 of the embodiment of the invention.Negative electrode 100 comprises plane conducting plates 105 and bossing 110.Aptly, plane conducting plates 105 is formed by metal.At least one surface that bossing 110 is positioned at plane conducting plates 105 is gone up and is one-body molded with plane conducting plates 105.Be formed at the lip-deep bossing 110 common arrays that form of plane conducting plates 105.Preferably, bossing 110 forms front surface array 111 on the front surface of plane conducting plates 105, and forms rear surface array 112 on the rear surface of plane conducting plates 105.Have enough distances between each bossing 110, make that the electrodeposit metals on each bossing 110 can not contact with the electrodeposit metals on the bossing 110 that is close in common galvanic deposit circulation.
The size and dimension of bossing 110 can be different.Aptly, each bossing 110 has plane upper surface 113.In one embodiment, the shape of the plane upper surface 113 of each bossing 110 is that diameter is the circle of 10-40mm, as shown in Figure 1.Preferably, the diameter of each circular bossing 110 is 12mm.Alternatively, can design each bossing 110 and all have the plane upper surface 113 that diameter is the circle of 30mm.Each diameter is that the distance between the center of plane upper surface 113 of bossing 110 of 12mm is preferably 23mm.Each diameter is that the distance between the center of plane upper surface 113 of bossing 110 of 30mm is preferably 38mm.
The edge of negative electrode 100 can be coated with insulating edge strip of a slab 130,131,132, to avoid electrodeposit metals growth around the edge of negative electrode 100.Can use traditional edge strip of a slab known in the art.
Negative electrode 100 is connected with suspension rod 150, so that negative electrode 100 introduces or shift out electrolyzer, and provides and being electrically connected of negative electrode.Can use traditional suspension rod known in the art.
Fig. 2 A shows the sectional view of the negative electrode 100 of Fig. 1.In the present embodiment, the front surface array 111 of bossing 110 is positioned on the front surface of plane conducting plates 105, and rear surface array 112 is positioned on the rear surface of plane conducting plates 105.Can also see edge strip of a slab 130,132.The thickness that is used to make the plane conducting plates 105 of negative electrode 100 is preferably enough thick in having suitable rigidity, but also will enough approach, with lighter relatively.Preferably, plane conducting plates 105 was that 6mm is thick before bossing 110 forms.
Shown in Fig. 2 A, front surface array 111 has the configuration identical with rear surface array 112.
Fig. 2 B shows the sectional view that Fig. 2 A further comprises insulating material 120.Except the plane upper surface 113 of bossing 110, the surface coverage of plane conducting plates 105 has insulating material 120.Insulating material can be resin, coating or other analogous materials.Aptly, during use, insulating material 120 can stand to hang the environment of the electrolyzer of negative electrode in it.The surface of insulating material 120 preferably flushes with the upper surface 113 of bossing 110.Alternatively, bossing 110 exceeds insulating material 120.
Fig. 3 A shows the sectional view of negative electrode 100 according to another embodiment of the present invention.Front surface array 111 has the configuration different with rear surface array 112.The array configurations that it will be understood by those skilled in the art that plane conducting plates 105 each lip-deep bossing 110 can be designed as has many variations.
Fig. 3 B is the sectional view that Fig. 3 A further comprises insulating material.
Fig. 4 shows the front elevation of negative electrode 400 according to another embodiment of the present invention.In the present embodiment, the plane upper surface 113 of bossing 410 assumes diamond in shape.Rhombohedral bossing 410 provides the conductive area bigger than circle on the surface of negative electrode 400, because rhombohedral is arranged (" pack ") area utilising efficiency height than circular arrangement.Rhombohedral bossing 410 makes that owing to each point on the angle removing of electrodeposit metals is easier.
Fig. 5 shows the front elevation of negative electrode 500 according to yet another embodiment of the invention, and wherein the plane upper surface 113 of bossing 510 is ingot shape.The bossing 510 of each ingot shape has two parallel straight flanges, by connecting from the outward extending arch section in the center of the bossing 510 of ingot shape.The bossing 510 of ingot shape provides the higher conductive area ratio to the insulation area for negative electrode 500.Preferably, the distance between the parallel straight edge of the bossing 510 of ingot shape is about 10-15cm, and the radius of arch section is about 5-10cm.The center of the bossing 510 of adjacent ingot shape preferably separates the distance of about 20-30cm.In a certain preferred embodiment, the distance between the parallel straight edge of the bossing 510 of ingot shape is 12cm, and the radius of arch section is 8cm.With the center of the bossing 510 of the ingot shape of the delegation distance of 27cm separately preferably, and the distance between the center of the bossing 510 of the ingot shape of adjacent lines is preferably 22cm.
The bossing 110 of negative electrode 100 preferably forms by the surface of chemically etched metal plane conducting plates 105.Fig. 6 A, 6B, 6C and 6D show the synoptic diagram according to first step, second step, third step and the 4th step in the method for the formation negative electrode 100 of the embodiment of the invention respectively.In first step (Fig. 6 A), use sequestering agent 610 to shelter in the zone that will form bossing 110 on the plane conducting plates 105.Preferably, sequestering agent is an adhesive tape.Certain preferred ground, sequestering agent is the vinyl adhesive tape.
In second step (Fig. 6 B), with the not masked surface of remainder aptly etching to reach about 5mm dark.The surperficial 1mm of etching remainder in a preferred embodiment, is dark.Preferably, by carrying out chemical milling, until the etched suitable degree of depth of metal to the metal flat conducting plates spraying ferric chloride Solution of having sheltered 620.
In third step (Fig. 6 C), sequestering agent is removed from the bossing 110 that forms; (Fig. 6 D) applies insulating material to etched surfaces in the 4th step, to form the negative electrode 100 of finished product.
Aptly, the front surface of the plane conducting plates 105 by anticathode 100 and rear surface are all carried out chemical milling and are handled, to form bossing 110.
Form method that bossing 110 makes negative electrode 110 not only soon but also easy by metal sheet 105 being carried out chemical milling.Because bossing 110 flushes with on every side insulating material 120 or exceeds insulating material 120 on every side, is not easy to damage insulating material 120 when removing electrodeposit metals.
The purpose of this specification sheets is to describe the present invention, but the invention is not restricted to the set of any one embodiment or concrete feature.Those skilled in the art will appreciate that, all fall into scope of the present invention based on the variation of embodiment.Such as, the size of negative electrode and shape can change, and size, quantity and the shape of same bossing also can change.In addition, the bossing on negative electrode can have more than one shape.
Should be appreciated that under the situation that does not deviate from the spirit and scope of the present invention, can carry out various other variation and modifications described embodiment.

Claims (14)

1. a negative electrode that is used to receive metal electrodeposition is characterized in that, this negative electrode comprises:
The plane conducting plates; And
Be positioned at least one lip-deep bossing of this plane conducting plates, wherein this plane conducting plates and this bossing are one-body molded.
2. negative electrode according to claim 1 is characterized in that, this negative electrode further comprises:
Be positioned at described bossing insulating material on every side, the surface of wherein said bossing exposes all the time.
3. negative electrode according to claim 1 is characterized in that the plane upper surface of each described bossing is rounded basically.
4. negative electrode according to claim 1 is characterized in that the plane upper surface of each described bossing is ingot shape basically.
5. negative electrode according to claim 1 is characterized in that the plane upper surface of each described bossing assumes diamond in shape basically.
6. negative electrode according to claim 1 is characterized in that, described bossing forms the front surface array of the front surface that is positioned at described plane conducting plates and is positioned at the rear surface array of the rear surface of this plane conducting plates.
7. negative electrode according to claim 6 is characterized in that, described front surface array has and the similar basically configuration of described rear surface array.
8. negative electrode according to claim 6 is characterized in that, described front surface array has and the different basically configuration of described rear surface array.
9. negative electrode according to claim 1 is characterized in that described negative electrode further comprises suspension rod, and this suspension rod is connected to the top of described plane conducting plates.
10. negative electrode according to claim 1 is characterized in that described negative electrode further comprises the insulating edge strip of a slab, and this edge strip of a slab covers at least one limit of described plane conducting plates.
11. a method that is formed for receiving the negative electrode of metal electrodeposition is characterized in that this method comprises the steps:
The zone of using masking material to shelter described plane conducting plates is to form the conducting plates of having sheltered;
Apply chemical to this conducting plates of having sheltered,, have integrally formed described bossing and this plane conducting plates of etching area, the formation in the zone of having sheltered of this bossing thereby form with chemical milling masking regional not.
12. method according to claim 11 is characterized in that, uses masking material that the front surface of described plane conducting plates and the zone on the rear surface are sheltered, to form the described conducting plates of having sheltered; Be used for chemical milling not the chemical of masking regional be applied on the front surface and rear surface of this conducting plates of having sheltered, forming this plane conducting plates, this plane conducting plates has the front surface array of the integrated bossing on the front surface that is positioned at this plane conducting plates and is positioned at the rear surface array of the integrated bossing on the rear surface of this plane conducting plates.
13. method according to claim 11 is characterized in that, this method further comprises the step that insulating material is applied to the etching area of described plane conducting plates.
14. method according to claim 11 is characterized in that, this method further comprises the step that the insulation edge strip of a slab is installed at least one limit of described plane conducting plates.
CN2009801352039A 2008-09-09 2009-09-08 A cathode and a method of forming a cathode Pending CN102149854A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
AU2008904675 2008-09-09
AU2008904675A AU2008904675A0 (en) 2008-09-09 A cathode and a method of forming a cathode
PCT/AU2009/001172 WO2010028428A1 (en) 2008-09-09 2009-09-08 A cathode and a method of forming a cathode

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CN201510053872.9A Division CN104611730A (en) 2008-09-09 2009-09-08 A cathode and a method of forming a cathode

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US (1) US20110233055A1 (en)
CN (2) CN102149854A (en)
AU (1) AU2009291494B2 (en)
CL (1) CL2011000493A1 (en)
WO (1) WO2010028428A1 (en)

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CN102828199A (en) * 2012-08-31 2012-12-19 苏州竞立制氢设备有限公司 Electrode plate of hydrogen production by water electrolysis and production method
CN103820822A (en) * 2014-02-28 2014-05-28 金川集团股份有限公司 Permanent negative plate for production of nickel button
JP2018178220A (en) * 2017-04-18 2018-11-15 住友金属鉱山株式会社 Cathode plate for test electrodeposition and manufacturing method of same
CN109415832A (en) * 2016-07-21 2019-03-01 住友金属矿山株式会社 Metal electrodeposition cathode plate and its manufacturing method
CN109891003A (en) * 2016-09-09 2019-06-14 嘉能可科技有限公司 The improvement of sunpender
CN110546310A (en) * 2017-05-29 2019-12-06 住友金属矿山株式会社 Cathode plate for metal electrodeposition and method for manufacturing the same

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US20140054178A1 (en) * 2012-08-22 2014-02-27 Thomas W. Valentine Electrode mask for electrowinning a metal
JP6638589B2 (en) * 2016-07-21 2020-01-29 住友金属鉱山株式会社 Cathode plate for metal electrodeposition and method for producing the same
CN106011948A (en) * 2016-08-01 2016-10-12 舒城联科表面处理有限公司 Improved treatment method of starting sheet for cyclone electrolysis

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Publication number Priority date Publication date Assignee Title
CN102828199A (en) * 2012-08-31 2012-12-19 苏州竞立制氢设备有限公司 Electrode plate of hydrogen production by water electrolysis and production method
CN103820822A (en) * 2014-02-28 2014-05-28 金川集团股份有限公司 Permanent negative plate for production of nickel button
CN103820822B (en) * 2014-02-28 2016-06-08 金川集团股份有限公司 A kind of permanent cathode plate for producing nickel button
CN109415832A (en) * 2016-07-21 2019-03-01 住友金属矿山株式会社 Metal electrodeposition cathode plate and its manufacturing method
CN109891003A (en) * 2016-09-09 2019-06-14 嘉能可科技有限公司 The improvement of sunpender
CN109891003B (en) * 2016-09-09 2021-11-02 嘉能可科技有限公司 Improvement of hanger rod
JP2018178220A (en) * 2017-04-18 2018-11-15 住友金属鉱山株式会社 Cathode plate for test electrodeposition and manufacturing method of same
CN110546310A (en) * 2017-05-29 2019-12-06 住友金属矿山株式会社 Cathode plate for metal electrodeposition and method for manufacturing the same
CN110546310B (en) * 2017-05-29 2020-09-15 住友金属矿山株式会社 Cathode plate for metal electrodeposition and method for manufacturing the same

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Publication number Publication date
CL2011000493A1 (en) 2012-03-16
AU2009291494A1 (en) 2010-03-18
CN104611730A (en) 2015-05-13
AU2009291494B2 (en) 2015-05-07
WO2010028428A1 (en) 2010-03-18
US20110233055A1 (en) 2011-09-29

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Application publication date: 20110810