CN102142657B - Manufacturing method of photonic crystal waveguide for improving lateral far field of stripe laser - Google Patents
Manufacturing method of photonic crystal waveguide for improving lateral far field of stripe laser Download PDFInfo
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- CN102142657B CN102142657B CN 201110049791 CN201110049791A CN102142657B CN 102142657 B CN102142657 B CN 102142657B CN 201110049791 CN201110049791 CN 201110049791 CN 201110049791 A CN201110049791 A CN 201110049791A CN 102142657 B CN102142657 B CN 102142657B
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Abstract
The invention relates to a manufacturing method of a photonic crystal waveguide for improving a lateral far field of a stripe laser, comprising the following steps of: (1) taking a substrate; (2) growing a lower limiting layer, an active area and an upper limiting layer in sequence on the substrate so as to form a horizontal waveguide structure; (3) adopting a method for etching with inductively coupled plasmas to carry out etching on the upper limiting layer, and forming a periodical stripe structure on the upper limiting layer, wherein one part of the stripe structure is a stripe current injection area, and the other part of the stripe structure is a light-field modulating area, and the control of a lateral mode can be achieved by combining the two areas; (4) manufacturing electrodes on the stripe current injection area to realize selective injection of current; (5) thinning the substrate, and improving the current injection characteristic; and (6) manufacturing back electrodes at the back surface of the substrate and finishing manufacture of the device.
Description
Technical field
The present invention relates to a kind of wide one-dimensional wave guide array with the cycle of two kinds of different bars that has, be meant a kind of manufacture method that is used to improve the photon crystal wave-guide in stripe type laser side direction far field especially, to improve the side direction far-field characteristic of laser.
Background technology
Along with optical communication, the development of light interconnection technique and various opto-electronic devices, laser technology become modern development in science and technology indispensable part, the application of laser has covered every field such as life, medicine, exploration, national defence.Along with constantly widening of application surface, the kind of laser is also day by day various.But cheap, reliably be that one type of laser can access universal precondition.In numerous lasers, the slab waveguide laser diode is because its cost is low, advantage such as manufacture craft is simple, favorable repeatability and extremely people's favor.This laser not only can directly be used, and can be used as the pump light source of other lasers such as all solid state laser, therefore is to use the most a kind of semiconductor laser at present.The horizontal light field restriction of slab waveguide laser is to realize through the epitaxial loayer of growing different, and the restriction of side direction light field is to realize through on semiconductor epitaxial wafer, etching ridged waveguide structure.The power output of laser can increase through increasing duct width; But wide can cause many module lasings; Influence beam quality, therefore wide laser often need be by the calibrator (-ter) unit of complicacy in coupling output, the loss of the power of this increase and the complexity of device.Coupled Passive Waveguide Structure is to be used for a kind of effective means of implementation pattern selection, but in the Coupled Passive Waveguide Structure, takes the lead in swashing the phase difference π of the pattern adjacent waveguide of penetrating, and the far field appears bimodal.The pattern of therefore how to regulate in the ridge waveguide laser is to realize the key of high light beam quality laser
The stripe type laser development has been ripe through quite so far; Guarantee that how laser basic mode swashs on the problem of penetrating; Each research group has proposed various scheme in the world, and the existing metal that adopts absorbs, and plate coupled waveguide etc. suppress the scheme of higher order mode; But these schemes all are to adopt the mode that increases loss to come implementation pattern to separate, and also do not have effective structure to carry out the regulation and control of light field.And photonic crystal has received extensive studies as the effective means of regulation and control light field.Therefore in the model selection of ridge waveguide laser, certainly will have very big effectiveness.
Summary of the invention
In view of this, the objective of the invention is to, a kind of manufacture method that is used to improve the photon crystal wave-guide in stripe type laser side direction far field is provided, can regulate the lateral mode of laser through this method, thereby realize that basic side module lasing improves the far field of laser.
For achieving the above object, the present invention provides a kind of manufacture method that is used to improve the photon crystal wave-guide in stripe type laser side direction far field, comprises the steps:
Step 1: get a substrate;
Step 2: on substrate, grow successively lower limit layer, active area and upper limiting layer form the transversal waveguides structure;
Step 3: adopt the method for inductively coupled plasma etching that upper limiting layer is carried out etching; On upper limiting layer, form periodic list structure; The part of this list structure is the strip current injection area; Remainder is the light field modulator zone, just can realize the regulation and control of lateral mode in conjunction with these two districts;
Step 4: the making electrode is realized the selectivity injection of electric current on the strip current injection area;
Step 5:, improve the electric current injection properties with substrate thinning;
Step 6: the back side at substrate makes backplate, accomplishes the making of device.
Wherein upper limiting layer is carried out the thickness of the etching depth of etching less than upper limiting layer.
Wherein the bar of periodic strip current injection area is wide less than wavelength doubly.
Wherein the wide bar less than the strip current injection area of bar of the light field modulator zone of periodic list structure is wide.
Wherein the material of substrate is InP or GaAs.
Wherein the material of upper limiting layer is InP or AlGaAs.
Wherein the material of lower limit layer is InP or AlGaAs.
Wherein the material of active area is InGaAsP, AlGaInAs or InGaAs.
Can find out that from technique scheme the present invention has following beneficial effect:
1, this photonic crystal waveguide structure provided by the invention; Can regulate and control the mode light field distribution; The light field of high-rder mode and basic mode is made a distinction, make the basic mode light field be limited in the Kuan Tiao district, and make the high-rder mode light field expand to the fillet district; Combine follow-up optionally electric current to inject like this, can realize the selection of basic mode.
2, this photonic crystal waveguide structure provided by the invention can be effectively be confined to wide injection region with the light field of basic mode, loss that can extra increase basic mode, thereby can not improve lasing threshold.
3, this photonic crystal waveguide structure provided by the invention is arranged on the top of active area, realizes the light field modulation through the evanescent field coupling, need not to penetrate active area, thereby can not cause damage to active area.
4, this photonic crystal waveguide structure provided by the invention, the ridge waveguide laser with traditional on technology is identical, therefore has ripe technology, and higher repeatability is arranged in the making.
Description of drawings
For making the object of the invention, technical scheme and advantage clearer, below in conjunction with specific embodiment, and with reference to accompanying drawing, to further explain of the present invention, wherein:
Fig. 1 is the schematic cross-section of a kind of photonic crystal waveguide structure provided by the invention; Adopted asymmetrical structure, the wide strip array in three cycles has been carried out the light field modulation.
Fig. 2 is the field distribution of the low step mode that exists in Fig. 1 structure; Wherein the light field phase place between each ridged bar is identical.
Fig. 3 is the field distribution of the high-order rank pattern that exists in Fig. 1 structure; The light field phase place phase difference of pi between each ridged bar wherein.
Fig. 4 is the schematic cross-section of another kind of photonic crystal waveguide structure provided by the invention; Adopted symmetrical structure, carried out the light field modulation single wide.
Fig. 5 is the basic mode optical field distribution that adopts after Fig. 4 structure is modulated.
Fig. 6 is the First-Order Mode optical field distribution that adopts after Fig. 4 structure is modulated.
Fig. 7 is the second order mode optical field distribution that adopts after Fig. 4 structure is modulated.
Embodiment
See also shown in Figure 1ly, the present invention is a kind of to be used to improve the manufacture method of the photon crystal wave-guide of stripe type laser side direction far-field distribution, comprises the steps:
Step 1: get a substrate 5, the material of this substrate 5 is InP or GaAs;
Step 2: on substrate 5, grow successively lower limit layer 4, active area 3 and upper limiting layer 2.Like substrate is InP, then can select grown InP as upper limiting layer 2 and lower limit layer 4, and InGaAsP or AlGaInAs are as active layer 3; Like substrate is GaAs, and the AlGaAs that can select to grow is upper limiting layer 2 and lower limit layer 4, and InGaAs is as active layer 3.
Step 3: adopt the method for inductively coupled plasma etching that upper limiting layer 2 is carried out etching; On upper limiting layer 2, form periodic list structure; The part of this list structure is the strip current injection area; The bar of said periodic strip current injection area is wide can be less than the yardstick of 6 times of wavelength, and remainder half is the light field modulator zone, and the wide bar less than the strip current injection area of the bar of the light field modulator zone of said periodic list structure is wide.Upper limiting layer 2 is carried out etching, and etching depth is less than the thickness of upper limiting layer 2.
Step 4: making electrode 1 on the strip current injection area; Electric current can only get into from the strip current injection area like this, and the gain between the different mode just has bigger difference, and the gain of basic mode can be significantly higher than other patterns in our design.
Step 5: with substrate 5 attenuates; It is compound to reduce the charge carrier that substrate brings like this, improves the electric injection properties of device.
Step 6: the back side at substrate 5 makes backplate 6, accomplishes the making of device.
Concrete device architecture such as Fig. 1 and shown in Figure 4; The print structure of making photon crystal wave-guide comprises upper limiting layer 2; Active area 3; Lower limit layer 4 and substrate 5 are made the side direction photon crystal structure in conjunction with optical exposure and lithographic technique at the upper limiting layer 2 of active area main room, and the upper limiting layer plated metal after substrate and etching is realized the selectivity injection of charge carrier respectively as backplate 6 and top electrode 1.Photonic crystal is to be coupled the implementation pattern modulation through evanescent field, need not to penetrate active area, thereby avoids active area is caused damage.
Embodiment one
In background technology, mention " Coupled Passive Waveguide Structure is to be used for a kind of effective means that implementation pattern selects; but in the Coupled Passive Waveguide Structure; take the lead in swashing the phase difference π of the pattern adjacent waveguide of penetrating; the far field appears bimodal ", this is the problem that present coupled waveguide laser faces, and that how to realize that adjacent waveguide do not have the in-phase mode that differs takes the lead in swashing that to penetrate be a key technology.Laser to near-infrared 1.55um in this instance has designed photonic crystal waveguide structure as shown in Figure 1, and wherein the array periodicity of current injection area is 3, array cycles 5 μ m; The wide 3um of bar; The array periodicity of light field modulator zone is 4, array cycles 4 μ m, the wide 2 μ m of bar.Under the modulation of structure shown in Figure 1, variation has taken place in the mode light field distribution in the array, and concrete effect can comparison diagram 2 and Fig. 3.Light field phase place between each ridged bar of pattern shown in Figure 2 is identical, the distribution of far field type of having Gauss shape, and this is the pattern of actual needs; And phase place phase difference of pi between the pattern shown in Figure 3, it is bimodal that the far field appears, and is the pattern that need curb.Through contrast can method the position of these two mode light field distribution is obviously different mutually.Under the condition that selectivity shown in Figure 1 is injected, in-phase mode shown in Figure 2 can obtain higher gain, penetrates thereby take the lead in swashing, and obtains far field preferably.
Embodiment two
For the waveguiding structure of wall scroll, wide ridged bar can cause many module lasings, influences beam quality.Same laser to near-infrared 1.55um has designed photonic crystal waveguide structure as shown in Figure 4 in this instance; Wherein current injection area has only a waveguiding structure, the wide 6um of bar, and light field modulator zone array periodicity is 3; Array cycles 4 μ m; The wide 2 μ m of bar are arranged on wide both sides, form symmetrical structure.Under the modulation of structure shown in Figure 4, variation has taken place in the optical field distribution of different mode in the current injection area, and concrete effect can comparison diagram 5-7.Fig. 5 is needed basic mode; Fig. 6 and Fig. 7 are respectively First-Order Mode and the second order mode after the modulation, can find to have only basic mode to be limited in current injection area, and higher order mode then is to expand in the whole photon crystal wave-guide; Therefore basic mode has highest-gain, can realize optionally that the sharp of basic mode penetrate.
Above-described specific embodiment; The object of the invention, technical scheme and beneficial effect have been carried out further explain, and institute it should be understood that the above is merely specific embodiment of the present invention; Be not limited to the present invention; All within spirit of the present invention and principle, any modification of being made, be equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (6)
1. a manufacture method that is used to improve the photon crystal wave-guide in stripe type laser side direction far field comprises the steps:
Step 1: get a substrate;
Step 2: on substrate, grow successively lower limit layer, active area and upper limiting layer form the transversal waveguides structure;
Step 3: adopt the method for inductively coupled plasma etching that upper limiting layer is carried out etching; On upper limiting layer, form periodic list structure; The part of this list structure is the strip current injection area; Remainder is the light field modulator zone, just can realize the regulation and control of lateral mode in conjunction with these two districts, and the wide bar less than the strip current injection area of the bar of the light field modulator zone of this periodic list structure is wide;
Step 4: the making electrode is realized the selectivity injection of electric current on the strip current injection area;
Step 5:, improve the electric current injection properties with substrate thinning;
Step 6: the back side at substrate makes backplate, accomplishes the making of device.
2. the manufacture method that is used to improve the photon crystal wave-guide in stripe type laser side direction far field according to claim 1, the wherein wide wavelength less than 6 times of the bar of periodic strip current injection area.
3. the manufacture method that is used to improve the photon crystal wave-guide in stripe type laser side direction far field according to claim 1, wherein the material of substrate is InP or GaAs.
4. the manufacture method that is used to improve the photon crystal wave-guide in stripe type laser side direction far field according to claim 1, wherein the material of upper limiting layer is InP or AlGaAs.
5. the manufacture method that is used to improve the photon crystal wave-guide in stripe type laser side direction far field according to claim 1, wherein the material of lower limit layer is InP or AlGaAs.
6. the manufacture method that is used to improve the photon crystal wave-guide in stripe type laser side direction far field according to claim 1, wherein the material of active area is InGaAsP, AlGaInAs or InGaAs.
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| CN102255240B (en) * | 2011-06-02 | 2012-09-26 | 中国科学院半导体研究所 | Semiconductor laser structure capable of realizing high-power transverse low divergence angle |
| CN103166108B (en) * | 2013-03-15 | 2016-01-20 | 中国科学院半导体研究所 | Circle spot exports low divergence edge emitting photon crystal laser and composite waveguide device |
| CN107611776B (en) * | 2017-10-13 | 2020-06-09 | 中国科学院长春光学精密机械与物理研究所 | Gain coupling distributed feedback semiconductor laser and manufacturing method thereof |
| CN109193344A (en) * | 2018-10-30 | 2019-01-11 | 中国工程物理研究院应用电子学研究所 | A kind of semiconductor laser and its manufacturing method with anti-ducting layer structure |
| CN110112650B (en) * | 2019-05-13 | 2020-06-02 | 苏州长光华芯半导体激光创新研究院有限公司 | High-power semiconductor chip and preparation method thereof |
| CN111082314B (en) * | 2019-12-11 | 2021-10-08 | 中国科学院长春光学精密机械与物理研究所 | Semiconductor laser and preparation method thereof |
| JP7407027B2 (en) | 2020-03-09 | 2023-12-28 | パナソニックホールディングス株式会社 | semiconductor light emitting device |
| CN113948968B (en) * | 2020-07-16 | 2023-10-03 | 山东华光光电子股份有限公司 | Semiconductor laser for realizing base side mode lasing and preparation method thereof |
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Non-Patent Citations (3)
| Title |
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| Dieter Bimberg et al..High-power high-brightness semiconductor lasers based on novel waveguide concepts.《Proc. SPIE》.2010,第7616卷(第76161I期), * |
| Mikhail V. Maximov et al..High-Power Low-Beam Divergence Edge-Emitting Semiconductor Lasers with 1- and 2-D Photonic Bandgap Crytal Waveguide.《IEEE Journal of Selected Topics in Quantum Electronics》.2008,第14卷(第4期), * |
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Inventor after: Zheng Wanhua Inventor after: Chen Wei Inventor after: Zhou Wenjun Inventor after: Liu Anjin Inventor after: Fu Feiya Inventor after: Zhang Jianxin Inventor after: Qu Hongwei Inventor before: Chen Wei Inventor before: Zhou Wenjun Inventor before: Liu Anjin Inventor before: Fu Feiya Inventor before: Zhang Jianxin Inventor before: Qu Hongwei Inventor before: Zheng Wanhua |
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Free format text: CORRECT: INVENTOR; FROM: CHEN WEI ZHOU WENJUN LIU ANJIN FU FEIYA ZHANG JIANXIN QU HONGWEI ZHENG WANHUA TO: ZHENG WANHUA CHEN WEI ZHOU WENJUN LIU ANJIN FU FEIYA ZHANG JIANXIN QU HONGWEI |
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