CN102142433A - Transistor combining transient voltage suppressor diode with schottky diode - Google Patents
Transistor combining transient voltage suppressor diode with schottky diode Download PDFInfo
- Publication number
- CN102142433A CN102142433A CN2011100480556A CN201110048055A CN102142433A CN 102142433 A CN102142433 A CN 102142433A CN 2011100480556 A CN2011100480556 A CN 2011100480556A CN 201110048055 A CN201110048055 A CN 201110048055A CN 102142433 A CN102142433 A CN 102142433A
- Authority
- CN
- China
- Prior art keywords
- diode
- transient voltage
- transistor
- schottky diode
- voltage suppressor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1203—Rectifying Diode
- H01L2924/12032—Schottky diode
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
The invention discloses a transistor combining a transient voltage suppressor diode with a schottky diode. Two pole lead wires of a transient voltage suppressor diode chip and a schottky diode chip are connected in parallel and then are packaged into a body to form a novel diode transistor. The transistor has the advantages that lots of space of down-stream products can be saved, the repeated product production is avoided, the loading speed is increased, the production efficiency is improved, and meanwhile the production cost is reduced.
Description
Technical field
The present invention relates to a kind of integrated diode transistor, particularly a kind of transient voltage suppresses the transistor of diode and Schottky diode combination.
Background technology
At present, this series products has only the single kind chip, client's product needed transient voltage in downstream suppresses diode (Transient Voltage Suppression Diode) and a Schottky diode (Schottky Rectifier Diode) is realized function, thereby taken the big quantity space of downstream product, increased production cost simultaneously.
Summary of the invention
Technical problem to be solved by this invention is will provide a kind of a transient voltage inhibition diode and a Schottky diode are integrated into a kind of new diode transistor, has improved production efficiency, and has reduced production cost.
In order to solve above technical problem, the invention provides the transistor that a kind of transient voltage suppresses diode and Schottky diode combination, transient voltage is suppressed be packaged in the body after the two poles of the earth lead-in wires parallel connection of diode chip for backlight unit and Schottky diode chip, constitute a new diode transistor.
The present invention is applicable to the axial diode product.
Superior effect of the present invention is:
1) the present invention can save the space of downstream product in a large number;
2) avoid the production of repetition, promoted filling speed, improved production efficiency, reduced production cost simultaneously.
Description of drawings
Fig. 1 is a basic circuit diagram of the present invention;
Fig. 2 is encapsulating structure figure of the present invention;
Fig. 3 is the schematic diagram of welding bench;
The number in the figure explanation
1-body; 2-down lead-in wires;
3-upward lead-in wires; 4-Schottky diode chip;
5-transient voltage suppresses diode chip for backlight unit; 6-following weld tabs;
7-upward weld tabs; 8-welding bench.
Embodiment
See also shown in the accompanying drawing, the invention will be further described.
As shown in Figure 1, the invention provides the transistor that a kind of transient voltage suppresses diode and Schottky diode combination, transient voltage is suppressed be packaged in the body 1 after the two poles of the earth lead-in wires parallel connection of diode chip for backlight unit 5 and Schottky diode chip 4, constitute a new diode transistor, be applicable to the axial diode product.
As shown in Figure 2, the concrete implementation step of the present invention when encapsulation:
Step 1: will play lead-in wire 2 to be placed horizontally at welding bench 8, welding bench as shown in Figure 3;
Step 2: will descend weld tabs 6 to be positioned over down on the boss of lead-in wire;
Step 3: be positioned over down weld tabs 6 respectively with what transient voltage suppressed diode chip for backlight unit 5 and Schottky diode chip 4, need not distinguish polarity;
Step 4: will go up weld tabs 7 and be positioned on two chips;
Step 5: two boss will going up lead-in wire 3 are positioned on the weld tabs 7, and it is the level of state.
Step 6: welding bench 8 covers cover plate, and the brush solder paste advances soldering furnace, and the furnace temperature peak temperature is 360 ℃, integrated diode transistor of output after 45 minutes.
Claims (1)
1. a transient voltage suppresses the transistor of diode and Schottky diode combination, it is characterized in that: transient voltage is suppressed be packaged in the body after the two poles of the earth lead-in wires parallel connection of diode chip for backlight unit and Schottky diode chip, constitute a new diode transistor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011100480556A CN102142433A (en) | 2011-03-01 | 2011-03-01 | Transistor combining transient voltage suppressor diode with schottky diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011100480556A CN102142433A (en) | 2011-03-01 | 2011-03-01 | Transistor combining transient voltage suppressor diode with schottky diode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102142433A true CN102142433A (en) | 2011-08-03 |
Family
ID=44409829
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011100480556A Pending CN102142433A (en) | 2011-03-01 | 2011-03-01 | Transistor combining transient voltage suppressor diode with schottky diode |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102142433A (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080079126A1 (en) * | 2006-09-29 | 2008-04-03 | Tracy Autry | Plastic surface mount large area power device |
| KR100870950B1 (en) * | 2007-11-19 | 2008-12-01 | 일진반도체 주식회사 | Light emitting diode device and manufacturing method thereof |
| CN101563784A (en) * | 2006-06-23 | 2009-10-21 | 维谢综合半导体有限责任公司 | Low forward voltage drop transient voltage suppressor and method of fabricating |
| CN201413823Y (en) * | 2009-05-21 | 2010-02-24 | 绍兴旭昌科技企业有限公司 | Surface-mounted dual-chip diode rectifying device |
| CN201956346U (en) * | 2011-03-01 | 2011-08-31 | 上海旭福电子有限公司 | Transient voltage suppressor diode and Schottky diode combined transistor |
-
2011
- 2011-03-01 CN CN2011100480556A patent/CN102142433A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101563784A (en) * | 2006-06-23 | 2009-10-21 | 维谢综合半导体有限责任公司 | Low forward voltage drop transient voltage suppressor and method of fabricating |
| US20080079126A1 (en) * | 2006-09-29 | 2008-04-03 | Tracy Autry | Plastic surface mount large area power device |
| KR100870950B1 (en) * | 2007-11-19 | 2008-12-01 | 일진반도체 주식회사 | Light emitting diode device and manufacturing method thereof |
| CN201413823Y (en) * | 2009-05-21 | 2010-02-24 | 绍兴旭昌科技企业有限公司 | Surface-mounted dual-chip diode rectifying device |
| CN201956346U (en) * | 2011-03-01 | 2011-08-31 | 上海旭福电子有限公司 | Transient voltage suppressor diode and Schottky diode combined transistor |
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| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C12 | Rejection of a patent application after its publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20110803 |