CN102141816B - Current-mode current induction circuit externally connected with MOS (metal oxide semiconductor) and method for realizing current mode - Google Patents
Current-mode current induction circuit externally connected with MOS (metal oxide semiconductor) and method for realizing current mode Download PDFInfo
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Abstract
The invention provides a current-mode current induction circuit externally connected with a power MOS (metal oxide semiconductor) transistor and a method for realizing the current mode. The current induction circuit further comprises a current sampling circuit, an adjustable external compensating resistor and a superposed circuit, wherein the current sampling circuit is used for converting the current flowing through the MOS transistor into voltage on the external resistor; the superposed circuit is used for superposing the voltage on the external resistor with the slope compensation voltage; and the resistance value of the external compensating resistor is set according to the on resistance of the external MOS transistor. The circuit and method provided by the invention have the following advantages and positive effects: sampling of the output current of the external MOS transistor can be realized under the current mode and the adjustable external compensating resistor is used for setting the value of the transfer resistance as a fixed value, thus the fixed current compensation slope can be designed to eliminate instability of subharmonics; the technical problem that the technicians in the field can only adopt voltage mode during externally connecting the MOS transistor before is solved; the complexity of loop compensation is reduced; and adjustment is more flexible.
Description
Technical field
The present invention relates to the power switch control field, be specifically related to the current-mode electric current sensing part circuit of a kind of external MOS.
Background technology
The basic functional principle of PWM switch voltage-stabilizing or current stabilization circuit is exactly in the situation that input voltage changes, inner parameter changes, external load changes, control circuit carries out close-loop feedback by the difference of controlled signal and reference signal, regulate the conducting pulse width of main circuit switch, make the controlled signals such as the output voltage of Switching Power Supply or electric current stable.And for the PWM closed-loop feedback control system of fixed frequency modulated PWM, mainly contain five kinds of PWM feedback mode controls, be respectively voltage mode control, Peak Current-Mode Controlled Circuit (also claiming current-mode), averagecurrent mode control, the hysteresis current pattern is controlled and combined mode is controlled.
Take BUCK circuit (Buck conversion circuit) as example, the whole control principle of current-mode as shown in Figure 1.There are two feedback control loops of Voltage Feedback ring and current feedback ring in circuit.Wherein, the control principle of Voltage Feedback ring is: output voltage V
outProduce feedback signal FB, feedback signal FB and reference signal V through the feedback resistance dividing potential drop
refDifference through amplifier E
ampAmplify and produce error amplification signal EAO.The EAO signal relatively produces the pwm signal with certain dutycycle with current loop feedback signal (current sensing signal and slope compensation signal and) again through the PWM comparer, pwm signal is through control signal DH and the DL of logic control circuit generating power switching tube, thereby the height of output voltage has also just been controlled in the open and close of power ratio control switching tube.
The control principle of current feedback ring is: sampling resistor R
SenseConnect with power tube, electric current in power tube flows through sampling resistor and produces sampled voltage, just obtain having the voltage on certain slope after sampled voltage process current sample amplifier, after the slope compensation voltage addition that this voltage and slope compensation electric current produce, compare with the output (being the EAO signal) of error amplifier through the PWM comparer, during greater than EAO, PWM comparer output low level is closed power switch pipe when the voltage after addition, and circuit stops charging.So being the peak value by regulating power tube current slope (be equal to inductive current slope), Controlled in Current Mode and Based comes the gauge tap pipe.
But we seldom directly adopt the electric current inductive reactance in the circuit of reality, because add resistance can affect the efficient of system, and high-precision small resistor also is difficult to realize.Conventional current mode current sensing part circuit as an alternative as shown in Figure 2, M wherein
1Be power MOS pipe, I is the electric current that flows through power tube, I
1Be the electric current of slope compensation, gm is mutual conductance coefficient, R
DSBe the switching tube internal resistance.As can be seen from the figure:
V
1＝R
1*I
3＝R
1*(I
1+I
2)＝R
1*(I
1+gm*I*R
DS)＝R
1*I
1+R
1*gm*I*R
DS (1)
By amplifier, power tube current I is converted into electric current I in this replacement circuit
2, pass through afterwards resistance R
1Realize electric current I
2With I
1Linear superposition, produce voltage V
1, using V
1The error voltage EAO that forms with the voltage negative feedback loop compares and obtains needed pwm signal.
The below describes as an example of the drop compensation circuit example, can find out from formula (1), and foreign current I slope is through (R
1* gm*R
DS) be converted into the more needed voltage slope in inside, unstable for eliminating subharmonic, this voltage slope and slope compensation voltage slope (R
1* dI1/dt) there is proportionate relationship, that is:
R
1*dI1/dt＞0.5*R
1*gm*R
DS*dIdown/dt (2)
If transmission resistance R
MAP=R
1* gm*R
DS
In actual applications, if output current is smaller, we can be integrated into chip internal with metal-oxide-semiconductor, metal-oxide-semiconductor conducting resistance R at this moment
DSVariation range be not very large, generally can be according to R
DSThe representative value setting:
R
1*dI1/dt≈0.75*R
1*gm*R
DS*dIdown/dt (3)
Meet design requirement.
The slope compensation slope should not arrange excessive, cross conference and cause peak point current restricted, and peak electricity fails to be convened for lack of a quorum and affects the output capacity of transducer.
If output current is larger, we should not be integrated into chip internal with metal-oxide-semiconductor, because larger electric current can produce more heat, the temperature of chip is raise rapidly affect the performance of chip, larger electric current can make the ground signalling GND of chip internal be subject to very strong interference simultaneously, can make chip failure when serious.
Therefore, we can select external metal-oxide-semiconductor under larger electric current, so namely do not have larger temperature rise, also do not have the interference to chip internal GND simultaneously.Simultaneously we can also select different metal-oxide-semiconductor types according to different needs, common metal-oxide-semiconductor for example, withstand voltage metal-oxide-semiconductor or vertical MOS pipe etc.
We tend to the needs different according to belt current ability and efficient etc. and select metal-oxide-semiconductor and R thereof when the external metal-oxide-semiconductor of design
DSValue if utilize traditional current-mode electric current sensing part circuit, can be found out R according to formula (2) and formula (3)
DSValue be restricted, this has also just limited the flexible Application of current-mode in the circuit design of external metal-oxide-semiconductor.In the design of in the past external metal-oxide-semiconductor, people tend to adopt voltage mode, yet there is duopole in the voltage mode output terminal, make the loop compensation more complicated, it is slower that while voltage mode and current-mode compare the variation adjusting of output, relatively poor to the inhibition ability that input changes.Therefore, as long as current-mode overcomes R
DSThe impact that value changes, current-mode still has larger application space.
How to overcome R
DSThe variation of value designs a kind of external MOS circuit that is applicable to current-mode, is the problem that need to solve for industry.
Summary of the invention
The current-mode current-sensing circuit that the purpose of this invention is to provide a kind of external MOS of being fit to, be subject to metal-oxide-semiconductor internal resistance variation and adopt voltage mode control to solve traditional external metal-oxide-semiconductor design, and voltage mode control is insensitive to the exporting change conditioned reaction, and input is changed the relatively poor technical matters of inhibition ability.
For achieving the above object, the present invention has adopted following technical scheme:
The current-mode electric current sensing part circuit of a kind of external MOS, comprise voltage feedback circuit and current feedback circuit, described voltage feedback circuit with the output valve of load the output voltage output valve after relatively and described current feedback circuit through the feedback voltage after the feedback resistance dividing potential drop and reference voltage through the PWM comparer, generate a pwm signal, this pwm signal generates control signal through the PWM logic control circuit, and then the open and close of power ratio control switching tube, described current feedback circuit further comprises:
One adjustable external compensating resistance;
One includes the sample circuit of external power MOS pipe, is converted into magnitude of voltage on described outer meeting resistance in order to the electric current that will flow through power MOS pipe; And
One supercircuit, in order to magnitude of voltage and the stack of slope compensation magnitude of voltage with outer meeting resistance, it further comprises a built-in resistor, one slope compensation current source, the mirror image power supply in parallel with this slope compensation current source, and one superimposed current produce circuit, the input end that this superimposed current produces circuit is electrically connected at described external compensating resistance, export a stable electric current, described mirror image power generation one flows into described built-in resistor afterwards to the electric current stack that the proportional superimposed current of this electric current and described slope compensation current source produce.
According to the described current-mode electric current of preferred embodiment of the present invention sensing part circuit, the impedance of described external compensating resistance is corresponding proportional with the conducting resistance of described external metal-oxide-semiconductor.
According to the described current-mode electric current of preferred embodiment of the present invention sensing part circuit, described supercircuit produces circuit by a mirror image power supply and described slope current and is connected, the electric current that the output current of this mirror image power generation one and described superimposed current generation circuit is equal to.
According to the described current-mode electric current of preferred embodiment of the present invention sensing part circuit, described sample circuit further comprises:
One operational amplification circuit, its output terminal and are connected on the grid of the PMOS pipe of described external compensating resistance;
One power MOS pipe, its source electrode and drain electrode are electrically connected at described operational amplification circuit two input ends by a resistance respectively;
The drain electrode of described PMOS pipe is series at described external compensating resistance, and source electrode is connected across between described metal-oxide-semiconductor drain electrode and power amplifier negative input end.
According to the described current-mode electric current of preferred embodiment of the present invention sensing part circuit, described superimposed current produces circuit and further comprises:
One operational amplification circuit, its output terminal and are connected on the grid of the NMOS pipe of described mirror image power supply, and its positive and negative input end is connected to respectively the two ends of described external compensating resistance by a resistance;
The drain electrode of described NMOS pipe is series at described mirror image power supply, and source electrode is connected across between described external compensating resistance output terminal and power amplification circuit negative input end.
According to the described current-mode electric current of preferred embodiment of the present invention sensing part circuit, the scale-up factor of described mirror image power supply is 1: 1.
According to the described current-mode electric current of preferred embodiment of the present invention overlapping portion circuit, resistance and described built-in resistor impedance phase that described operational amplification circuit two input ends connect are same.
According to the described current-mode electric current of preferred embodiment of the present invention sensing part circuit, described mirror image power supply is in order to produce the electric current corresponding with the electric current of described supercircuit generation.
According to the described current-mode electric current of preferred embodiment of the present invention sensing part circuit, the voltage signal that produces after described supercircuit stack exports described PWM comparer to, compares with the output signal of described error amplifier.
The present invention separately provides a kind of current-mode implementation method of external metal-oxide-semiconductor, comprising: choose the resistance external compensating resistance corresponding with external metal-oxide-semiconductor conducting resistance according to ratio; One sample circuit is provided, will be converted into by the electric current of external metal-oxide-semiconductor external compensating resistance magnitude of voltage; Provide a supercircuit, with outer meeting resistance voltage and the stack of slope compensation magnitude of voltage; After superposeing, voltage and Voltage Feedback loop voltag are relatively; Produce pwm control signal.
Owing to having adopted above technical characterictic, make the present invention have following advantage and good effect than prior art:
At first, according to circuit provided by the invention and method, can realize external metal-oxide-semiconductor realization to the sampling of output current under current-mode, and need not to consider that the size of output current is on the impact of chip performance;
Secondly, can realize the sampling to external metal-oxide-semiconductor output current under current-mode, and be fixed value by the size design that adjustable external compensating resistance will transmit resistance, thereby can design fixing current compensation slope and eliminate the subharmonic instability, overcome those skilled in the art and can only adopt the technological difficulties of voltage molding formula in the past when external metal-oxide-semiconductor, reduce the complexity of loop compensation, regulate more flexible.
Certainly, implement any several specific embodiments of content of the present invention, might not reach simultaneously above whole technique effect.
Description of drawings
Fig. 1 is the whole schematic diagram that the switch power supply stream mode is controlled;
Fig. 2 is the application principle figure of current feedback ring in traditional current-mode;
Fig. 3 is the process flow diagram of control method provided by the invention;
Fig. 4 is theory diagram of the present invention;
Fig. 5 is the schematic diagram of the sample circuit in Fig. 4;
Fig. 6 is the schematic diagram of the operational amplification circuit in Fig. 5;
Fig. 7 is the schematic diagram of the supercircuit in Fig. 4;
Fig. 8 is the schematic diagram of the operational amplification circuit in Fig. 7;
Fig. 9 is the overall diagram of current feedback loop of the present invention.
Embodiment
Below in conjunction with accompanying drawing, several preferred embodiments of the present invention are described in detail, but the present invention is not restricted to these embodiment.The present invention contain any make on marrow of the present invention and scope substitute, modification, equivalent method and scheme.Understand for the public is had thoroughly the present invention, describe concrete details in detail in the following preferred embodiment of the present invention, and do not have for a person skilled in the art the description of these details also can understand the present invention fully.In addition, for fear of essence of the present invention is caused unnecessary obscuring, do not describe well-known method, process, flow process, element and circuit etc. in detail.
Core concept of the present invention is, compensates the variation of external metal-oxide-semiconductor conduction resistance value by outer meeting resistance, thereby realizes transmitting resistance R
MAPValue substantially constant, we just can arrange the requirement that fixing slope compensation slope satisfies formula (2) and formula (3) like this, eliminate subharmonic unstable.
And, observing formula (2) and formula (3), we can see: transmit resistance R
MAP=R
1* gm*R
DS, R wherein
DSValue be variable, gm is that the mutual conductance of inner amplifier should not change, R so only changes
1, use external R
1Method compensate R
DSVariation, thereby keep the transmission resistance R
MAPValue constant.The but slope of slope compensation and R
1, dI1/dt is relevant, wants to guarantee that the slope of slope compensation is constant, only have R
1Be divided into two, change formula (2) and formula (3) as follows:
R
11*dI1/dt＞0.5*R
12*gm*R
DS*dIdown/dt (4)
R
11*dI1/dt≈0.75*R
12*gm*R
DS*dIdown/dt (5)
R
11Be the built-in resistor (size is fixing) of chip, R
12For external compensating resistance is used for compensating R
DSThe variation of value.
Please refer to Fig. 3, it is the process flow diagram of realizing a kind of implementation method of inventive concept, mainly comprises the following steps:
S301: choose the resistance external compensating resistance corresponding with external metal-oxide-semiconductor conducting resistance, the conducting resistance R of metal-oxide-semiconductor according to ratio
DSAccording to different metal-oxide-semiconductor performance differences, difference is arranged also, and transfer resistance RMAP and R
12And R
DSRelevant, both are proportionate relationship, therefore need to be according to R
DSChoose the impedance of R12.
S302 a: sample circuit is provided, will be converted into by the electric current of external metal-oxide-semiconductor external compensating resistance magnitude of voltage.
S303: provide a supercircuit, with outer meeting resistance voltage and the stack of slope compensation magnitude of voltage;
S304: after superposeing, voltage and Voltage Feedback loop voltag are relatively;
S305: produce pwm control signal, this pwm signal has certain dutycycle, then produces the control signal of power switch pipe through the logic control circuit computing, the conducting of power ratio control switching tube or close.
Please refer to Fig. 4, it is a kind of physical circuit block diagram of realizing content of the present invention;
The current-mode electric current sensing part circuit of a kind of external MOS, comprise voltage feedback circuit and current feedback circuit, described voltage feedback circuit with the output valve of load the output voltage output valve after relatively and described current feedback circuit through the feedback voltage after the feedback resistance dividing potential drop and reference voltage through the PWM comparer, generate pwm signal, pwm signal generates control signal through the PWM logic control circuit, and then the open and close of power ratio control switching tube, described current feedback circuit further comprises adjustable external compensating resistance R
12, include the sample circuit of external metal-oxide-semiconductor and the supercircuit that superposes in order to magnitude of voltage and slope compensation magnitude of voltage with outer meeting resistance.
Please refer to Fig. 5, it is the schematic diagram of the sample circuit in Fig. 4, and it comprises: operational amplification circuit 501 and metal-oxide-semiconductor 503, the output terminal of operational amplification circuit 501 and are connected on the grid of the PMOS pipe 502 of external compensating resistance R12; The source electrode of metal-oxide-semiconductor 503 and drain electrode are respectively by a resistance R
3Be electrically connected at two input ends of operational amplification circuit 501; 502 drain electrodes of PMOS pipe are series at external compensating resistance R
12, source electrode is connected across between the negative input end of metal-oxide-semiconductor 503 drain electrodes and operational amplification circuit 501.
We can draw according to Fig. 5:
I*R
DS+R
3*I
4＝R
3*(I
4+I
5)
Arrange: I
5=I*R
DS/ R
3
V
12＝I
5*R
12＝R
12*I*R
DS/R
3 (6)
Namely transmit resistance R
MAP=R
12* R
DS/ R
3(7)
R
3Be the built-in resistor of fixed resistance value, R
DSBe the conducting resistance of external metal-oxide-semiconductor 503, R
12Be external compensating resistance.According to different R
DS, we select different R
12, can guarantee to transmit like this resistance R
MAPBe constant.
Formula (7) substitution formula (4), (5) are got:
R
11*dI1/dt＞0.5*(R
12*R
DS/R
3)*dIdown/dt (8)
R
11*dI1/dt≈0.75*(R
12*R
DS/R
3)*dIdown/dt (9)
Guaranteeing to transmit resistance R
MAPUnder prerequisite for constant, we can arrange R easily
11* the parameter of dI1/dt satisfies formula (8) and formula (9), has guaranteed Systems balanth.
Please refer to Fig. 6, it is the schematic diagram of the operational amplification circuit in Fig. 5, and this circuit can guarantee higher 3dB gain bandwidth (GB).
Please refer to Fig. 7, it is the schematic diagram of the supercircuit in Fig. 4, and as seen, it further comprises a built-in resistor R
11, one produces the slope compensation electric current I
1Slope compensation current source 70, the mirror image power supply 71 in parallel with this slope compensation current source, an and superimposed current produces circuit 72.
Superimposed current produces circuit 72 input ends and is electrically connected at described external compensating resistance R
12, the electric current that output one is stable, mirror image power supply 71 is with the electric current I of this mirror image power generation
8The electric current I that proportional slope power supply and slope compensation current source 70 produce
1Flow into built-in resistor R after stack
11, the scale-up factor of preferred mirror image power supply 71 is 1: 1.
Superimposed current produces circuit and further comprises: operational amplification circuit 722 and NMOS pipe 721, and operational amplification circuit 722 output terminals are connected on the grid of NMOS pipe 721, and its positive and negative input end is respectively by a resistance R
4Be connected to external compensating resistance R
12Two ends.
The drain electrode of NMOS pipe 721 is series at mirror image power supply 71, and source electrode is connected across external compensating resistance R
12Between the negative input end of output terminal and power amplifier 722.
We can draw according to Fig. 7:
(I
8+ I
6) * R
4=I
6* R
4+ V
12Derivation obtains I
8=V
12/ R
4
The scale-up factor of mirror image power supply 71 is 1: 1, so,
V
11＝I
8*R
11+I
1*R
11
If R is set
4=R
11,
V
11＝V
12+I
1*R
11 (10)
So just realized outer meeting resistance R
12On magnitude of voltage and the slope compensation magnitude of voltage (electric current I of slope compensation
1At built-in resistor R
11The magnitude of voltage of upper formation) stack, the operational amplification circuit of this part as shown in Figure 8.
Please refer to Fig. 9, Fig. 9 is the schematic diagram of whole external metal-oxide-semiconductor current feedback circuit, overall current sensing part circuit as shown in Figure 9, according to formula (6) and formula (10) (R
4=R
11) output voltage V as can be known
11:
V
11＝I
1*R
11+R
12*I*R
DS/R
3 (11)
The voltage that produces of slope compensation electric current: V wherein
SO=I
1* R
11
Induced voltage to power tube current: V
SE=R
12* I*R
DS/ R
3
Slope compensation voltage slope: d
VSO/ d
t=R
11* dI1/dt (12)
Induced voltage slope: d
VSE/ d
t=(R
12* R
DS/ R
3) * dI/dt (13)
Wherein transmit resistance R
MAP=R
12* R
DS/ R
3(14)
So as long as according to power tube conducting resistance R
DSSize reasonable outer meeting resistance R is set
12Resistance value, realize transmitting resistance R
MAPBig or small constant.So just can guarantee by fixing slope compensation electric current is set the establishment of formula (8) and formula (9) also just to have guaranteed Systems balanth.
In sum, owing to having adopted above technical characterictic, make the present invention have following advantage and good effect than prior art:
At first, according to circuit provided by the invention and method, can realize external metal-oxide-semiconductor realization to the sampling of output current under current-mode, and need not to consider that the size of output current is on the impact of chip performance;
Secondly, can realize the sampling to external metal-oxide-semiconductor output current under current-mode, and be fixed value by the size design that adjustable external compensating resistance will transmit resistance, thereby can design fixing current compensation slope and eliminate the subharmonic instability, overcome those skilled in the art and can only adopt the technological difficulties of voltage molding formula in the past when external metal-oxide-semiconductor, reduce the complexity of loop compensation, regulate more flexible.
The preferred embodiment of the present invention just is used for helping to set forth the present invention.Preferred embodiment does not have all details of detailed descriptionthe, does not limit this invention yet and only is described embodiment.Obviously, according to the content of this instructions, can make many modifications and variations.These embodiment are chosen and specifically described to this instructions, is in order to explain better principle of the present invention and practical application, thereby under making, the technical field technician can utilize the present invention well.The present invention only is subjected to the restriction of claims and four corner and equivalent.
Claims (10)
1. the current-mode electric current sensing part circuit of an external MOS, comprise voltage feedback circuit and current feedback circuit, described voltage feedback circuit with the output valve of load the output voltage output valve after relatively and described current feedback circuit through the feedback voltage after the feedback resistance dividing potential drop and reference voltage through the PWM comparer, generate a pwm signal, this pwm signal generates control signal through the PWM logic control circuit, and then the open and close of power ratio control switching tube, it is characterized in that, described current feedback circuit further comprises:
One adjustable external compensating resistance;
One includes the current sampling circuit of external power MOS pipe, is converted into magnitude of voltage on outer meeting resistance in order to the electric current that will flow through power MOS pipe; And
One supercircuit, in order to magnitude of voltage and the stack of slope compensation magnitude of voltage with outer meeting resistance, it further comprises a built-in resistor, one slope compensation current source, the mirror image power supply in parallel with this slope compensation current source, and one superimposed current produce circuit, the input end that this superimposed current produces circuit is electrically connected at described external compensating resistance, export a stable electric current, described mirror image power generation one flows into described built-in resistor afterwards to the electric current stack that the proportional superimposed current of this electric current and described slope compensation current source produce.
2. current-mode electric current as claimed in claim 1 sensing part circuit, is characterized in that, the impedance of described external compensating resistance is corresponding proportional with the conducting resistance of described external power MOS pipe.
3. current-mode electric current as claimed in claim 1 sensing part circuit, it is characterized in that, described supercircuit is connected with the slope compensation current generating circuit by a mirror image power supply, the electric current that the output current of this mirror image power generation one and described superimposed current generation circuit is equal to.
4. current-mode electric current as claimed in claim 1 sensing part circuit, is characterized in that, described sample circuit further comprises:
One operational amplification circuit, its output terminal and are connected on the grid of the PMOS pipe of described external compensating resistance;
One power MOS pipe, its source electrode and drain electrode are electrically connected at respectively two input ends of described operational amplification circuit by a resistance;
The drain electrode of described PMOS pipe is series at described external compensating resistance, and source electrode is connected across between the negative input end of described power MOS pipe source electrode and power amplification circuit.
5. current-mode electric current as claimed in claim 1 sensing part circuit, is characterized in that, described superimposed current produces circuit and further comprises:
One operational amplification circuit, its output terminal are connected to a grid that is connected on the NMOS pipe of described mirror image power supply, and its positive and negative input end is electrically connected at respectively the two ends of described external compensating resistance by a resistance;
The drain electrode of described NMOS pipe is series at described mirror image power supply, and source electrode is connected across the amplifier negative input end.
6. current-mode electric current as claimed in claim 1 sensing part circuit, is characterized in that, the scale-up factor of described mirror image power supply is 1: 1.
7. current-mode electric current as claimed in claim 5 sensing part circuit, is characterized in that, the resistance that described operational amplification circuit two input ends connect and described built-in resistor impedance phase are together.
8. current-mode electric current as claimed in claim 1 sensing part circuit, is characterized in that, mirror current source is in order to produce the electric current corresponding with the voltage of described supercircuit generation.
9. current-mode electric current as claimed in claim 1 sensing part circuit, is characterized in that, the voltage signal that produces after described supercircuit stack exports described PWM comparer to, compares with the output signal of error amplifier.
10. the current-mode implementation method of an external metal-oxide-semiconductor, is characterized in that, comprising:
Choose the resistance external compensating resistance corresponding with external metal-oxide-semiconductor conducting resistance according to ratio;
One current sampling circuit is provided, will be converted into by the electric current of external metal-oxide-semiconductor external compensating resistance magnitude of voltage;
Provide a supercircuit, with outer meeting resistance voltage and the stack of slope compensation magnitude of voltage;
After superposeing, voltage and Voltage Feedback loop voltag are relatively;
Produce pwm control signal.
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| CN 201010512350 CN102141816B (en) | 2010-10-19 | 2010-10-19 | Current-mode current induction circuit externally connected with MOS (metal oxide semiconductor) and method for realizing current mode |
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|---|---|---|---|
| CN 201010512350 CN102141816B (en) | 2010-10-19 | 2010-10-19 | Current-mode current induction circuit externally connected with MOS (metal oxide semiconductor) and method for realizing current mode |
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| CN102141816B true CN102141816B (en) | 2013-05-15 |
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| CN115436689B (en) * | 2022-09-23 | 2023-09-01 | 陕西省电子技术研究所有限公司 | Null position testing device based on double operational amplifiers and Hall current sensors |
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| US5757174A (en) * | 1995-07-19 | 1998-05-26 | Micro Linear Corporation | Current sensing technique using MOS transistor scaling with matched current sources |
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| CN101165497A (en) * | 2006-10-16 | 2008-04-23 | 深圳安凯微电子技术有限公司 | Power tube current detection circuit |
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