CN102136537A - Semiconductor illuminating element with thinned structure and preparation method thereof - Google Patents
Semiconductor illuminating element with thinned structure and preparation method thereof Download PDFInfo
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- CN102136537A CN102136537A CN2011100440281A CN201110044028A CN102136537A CN 102136537 A CN102136537 A CN 102136537A CN 2011100440281 A CN2011100440281 A CN 2011100440281A CN 201110044028 A CN201110044028 A CN 201110044028A CN 102136537 A CN102136537 A CN 102136537A
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Abstract
The invention discloses a semiconductor illuminating element with a thinned structure and preparation method thereof. The semiconductor illuminating element comprises a semiconductor illuminating structure, a carrier, and a thinned structure formed between the semiconductor illuminating structure and the carrier. The manufacture method thereof comprises the steps as follows: a multi-layer semiconductor illuminating structure is formed on a substrate; the multi-layer semiconductor illuminating structure is stuck to a support body; the substrate is thinned so as to form the thinned structure; and the carrier is formed or jointed to the thinned structure; then the support body is removed.
Description
The application is the dividing an application that be on January 28th, 2008 and denomination of invention the applying date for the Chinese patent application No.200810003245.4 of " semiconductor light-emitting elements and manufacture method thereof " with thinning structure.
Technical field
The present invention relates to a kind of semiconductor light-emitting elements and manufacture method thereof with thinning structure.
Background technology
Semiconductor light-emitting elements, light-emitting diode (LED) for example, under brightness in recent years constantly promotes, application is expanded the extremely light source of all kinds of devices from traditional indicator light or decorative use, even in the near future, very likely replace traditional fluorescent lamp, become the light source of lighting field of new generation.
The internal quantum of light-emitting diode is about about 50% to 80% at present; There is 20% to 50% input power can't be converted light approximately, and is created in the light-emitting diode in the mode of heat.If can't be effectively the thermal conductance of light-emitting diode inside be gone out, can cause the luminous diode temperature rising, and deterioration the reliability of light-emitting diode.On the other hand, the light that light-emitting diode produces is if can't effectively be removed, and part light comes back reflective or refraction because of the total reflection factor is confined to light-emitting diode inside, is finally absorbed by electrode or luminescent layer, and brightness can't be promoted.The invention provides the solution of innovation, take out efficient by thermal resistance or the raising light that reduces light-emitting diode, with the heat history problem of solution light-emitting diode, and the reliability of lift elements and luminous efficiency.The present invention provides the light-emitting component that can be applicable to high power output simultaneously, to be applied to lighting field.
Summary of the invention
The invention provides a kind of light-emitting component, comprise thinning structure; Semiconductor light emitting structure is positioned at a side of thinning structure, comprises first conductive-type semiconductor layer, active layer, second conductive-type semiconductor layer; Carrier is positioned at the opposite side of thinning structure; And at least one channel shape is formed in the described thinning structure.
Another aspect of the present invention provides a kind of manufacture method of light-emitting component, and its step comprises provides substrate; Form semiconductor light emitting structure on this substrate; Fit described semiconductor structure to supporter; The described substrate of thinning is to form thinning structure; Form at least one raceway groove in described thinning structure; And form or engage carrier to described thinning structure.
According to one embodiment of the invention, this manufacture method also comprises with the described substrate of chemico-mechanical polishing mode thinning.
According to one embodiment of the invention, this manufacture method also comprises with laser and forms described at least one raceway groove.
Description of drawings
Fig. 1 is a schematic diagram, shows first embodiment according to horizontal light emitting element structure of the present invention.
Fig. 2 A to 2C is a schematic diagram, shows first to the 3rd embodiment according to vertical light-emitting component structure of the present invention.
Fig. 3 A and 3B are schematic diagram, show second to the 3rd embodiment according to horizontal light emitting element structure of the present invention.
Fig. 4 is a schematic diagram, shows the 4th embodiment according to horizontal light emitting element structure of the present invention.
Fig. 5 A to 5G shows each step schematic diagram of the light emitting element structure that forms Fig. 2 C.
Fig. 6 A shows the schematic diagram of an elliptical polarizer.
Show that to 6B a laser forms each step schematic diagram of raceway groove.
Fig. 6 C shows that a laser forms the device schematic diagram of raceway groove.
Description of reference numerals
11 growth substrates, 111 thin substrates
112 semiconductor buffer layers, 12 semiconductor light emitting structures
121 first conductive-type semiconductor layers, 122 active layers
123 second conductive-type semiconductor layers, 13 carriers
141,241a, 241b, 341 intermediate layers 142,242a, 242b reflector
15,25 first conductor pads 16,26,26a second conductor pads
17,37a, 37b first raceway groove 181 second raceway grooves
191 adhesion coatings, 19 supporters
28a, 28b, 28c, 47 conducting channels, 48 ohmic contact layers
49 electric current dispersion layers, 61 first material layers
62 second material layers, 63,66 laser
64 laser pickoffs, 65 data operation processors
S1 upper surface S2 lower surface
W burst length width t
PulsePulse period
Embodiment
Fig. 1 discloses the horizontal light-emitting component 1 according to one embodiment of the invention, comprises thin substrate 111, has upper surface S1 and lower surface S2; Semiconductor buffer layer 112 is positioned at the upper surface of thin substrate 111; Semiconductor light emitting structure 12 is formed on the semiconductor buffer layer 112, comprise first conductive-type semiconductor layer 121, active layer 122 and second conductive-type semiconductor layer 123, wherein, Bu Fen semiconductor light emitting structure 12 is partly removed to expose first conductive-type semiconductor layer 121 of part; Reflector 142 is formed at the lower surface of thin substrate 111; Carrier 13 is attached at reflector 142 by intermediate layer 141; First conductor pads 15 and second conductor pads 16 electrically connect with second conductive-type semiconductor layer 123 and first conductive-type semiconductor layer 121 respectively, and first conductor pads 15 and second conductor pads 16 are positioned at the same side of carrier 13; And a plurality of first raceway grooves 17 penetrate thin substrate 111 and extend to the degree of depth of semiconductor buffer layer 112.Wherein, thin substrate 111 is formed after by the growth substrate of thinning one in order to growing semiconductor resilient coating 112 and semiconductor light emitting structure 12.The material of growth substrate comprises that at least one material is selected from material group that GaAs, sapphire, carborundum, gallium nitride and aluminium nitride form etc., and its conductive coefficient is not more than the conductive coefficient of carrier usually.For reducing the thermal resistance of light-emitting component, in finishing growing semiconductor resilient coating 112 and semiconductor light emitting structure 12 after growth substrate, carry out thinning so that the thickness of growth substrate is not more than 50 μ m to form thin substrate 111, with the thermal resistance of effective reduction element approximately by reducing to more than the original about 200 or 300 μ m.The thickness of thin substrate 111 is preferably and is not more than 20 μ m; Be more preferred from and be not more than 5 μ m.In addition, be to keep the reliability of technology, the resilient coating of semiconductor buffer layer 112 during as the thinning growth substrate, avoiding in the thinning process, the technology that difference the caused variation because of the thinning speed or the uniformity is damaged semiconductor light emitting structure 12.Thin substrate 111 and semiconductor buffer layer 112 formed thinning structures still will be possessed certain thickness, are preferably and are not less than 2 μ m, to keep the reliability of technology.The conductive coefficient of carrier 13 is not less than the conductive coefficient of thin substrate 111, to reduce the thermal resistance of light-emitting component.Carrier 13 comprises the material that conductive coefficient is not less than 50W/m ℃; Be preferably and be not less than 100W/m ℃, for example comprise materials such as silicide, carbide, metal, metal alloy, metal oxide, metallic composite, diamond, diamond-like-carbon, and can add low-expansion material to reduce the stress that carrier produces.First raceway groove 17 for example comprises transparent material: silica, silicon nitride, organic polymer or air, the refractive index difference of its refractive index and thin substrate 111 are at least greater than 0.1, to increase light extraction efficient.First raceway groove 17 also can comprise high heat conductive transparent material, and for example materials such as carborundum, zinc oxide or diamond with the thermal resistance of reduction element, and are carried highlight extraction efficiency.In one embodiment, a plurality of first raceway grooves 17 penetrate thin substrate 111 and extend to the degree of depth of semiconductor buffer layer 112, be preferably 0.1～1 μ m, make that thin substrate 111 and a plurality of first raceway groove 17 and semiconductor buffer layer 112 contacted interfaces are concavo-convex upper surface S1 increasing light scattering, and and then increase light extraction efficient.A plurality of first raceway grooves 17 are periodically two-dimensional arrangements, but can also quasi periodicity, variable period or no periodic array; For example be with the cylinder of diameter 1～10 μ m or the two-dimensional arrangements of polygon column formation, or, for example be netted so that how long strip groove is cross-linked to each other (cross-linking).Intermediate layer 141 can be used as adhesion coating with adhesion carrier 13 and reflector 142; In another embodiment, intermediate layer 141 can be used as the plating inculating crystal layer, and it is formed thereon to make carrier 13 be electroplated; In another embodiment, intermediate layer 141 also can be used as diffused barrier layer, influences material behavior with inhibitory reflex layer 141 with the mutual diffusion of carrier 13.The material of first conductive-type semiconductor layer 121, active layer 122 or second conductive-type semiconductor layer 123 comprises Al
pGa
qIn
(1-p-q)P or Al
xIn
yGa
(1-x-y)N, 0≤p wherein, q≤1; P, q, x, y are positive number; (p+q)≤1; (x+y)≤1.First conductive-type semiconductor layer 121 comprises the first conductivity type bond course, and second conductive-type semiconductor layer 123 comprises the second conductivity type bond course.
Fig. 2 A discloses the vertical light-emitting element 2a according to one embodiment of the invention, and compared to light-emitting component shown in Figure 11, first conductor pads 25 of light-emitting component 2a and second conductor pads 26 are positioned at the phase heteropleural of carrier 13; In addition, light-emitting component 2a also comprises at least one conduction 28a and penetrates thin substrate 111 and semiconductor buffer layer 112 to electrically connect with the first conductive semiconductor layer 121; Wherein conduction pathway 28a extends to a degree of depth of this semiconductor light emitting structure 12.Reflector 242a and intermediate layer 241a are electric conducting material, and under forward bias, conduction pathway 28a electrically connects semiconductor light emitting structure 12 and carrier 13, forms path between first conductor pads 25 and second conductor pads 26.Light-emitting component 2b shown in Fig. 2 B, conduction pathway 28a extend to a degree of depth of this semiconductor light emitting structure 12; The also penetrable reflector 242b of conduction 28b, and have and intermediate layer 241b identical materials.Fig. 2 C discloses another vertical light-emitting element 2c, compared to the light-emitting component 2a shown in Fig. 2 A, the part of the semiconductor light emitting structure 12 of light-emitting component 2c is partly removed exposing first conductive-type semiconductor layer 121 of part, and comprises at least one conduction 28c and extend to reflector 142 from the first exposed conductive-type semiconductor layer 121.The quantity of conduction 28a, 28b or 28c and be arranged as and make CURRENT DISTRIBUTION have preferable effect; In addition, conduction 28a, 28b or 28c are high conductive coefficient because of having than the first conductive semiconductor layer 121, the heat that semiconductor light emitting structure 12 is produced can be directly conducted to carrier 13.The material of conduction 28a, 28b or 28c comprises conductive heat conducting materials such as metal, metal alloy, metal oxide or conducting polymer.
Fig. 3 A discloses the horizontal light-emitting component 3a according to one embodiment of the invention, and compared to light-emitting component shown in Figure 11, light-emitting component 3a has transparent carrier 33 and a plurality of first transparent raceway groove 37a, and is adhered to thin substrate 111 with transparent intermediate layer 341.Shown in Fig. 3 B, raceway groove 37b also can only be formed in the thin substrate 111, and does not penetrate thin substrate 111.Intermediate layer 341 can be transparent adhesion coating, and its material comprises benzocyclobutene (BCB), crosses fluorine cyclobutane (PFBC), epoxy resin (Epoxy), silica gel high-molecular organic materials such as (Silicone).Raceway groove 37a and 37b for example comprise transparent material: silica, silicon nitride, organic polymer or air, the refractive index difference of its refractive index and thin substrate 111 are at least greater than 0.1, to increase light extraction efficient.Raceway groove 37a and 37b also can comprise high heat conductive transparent material, and for example materials such as gallium nitride, aluminium nitride, carborundum, zinc oxide or diamond with reduction element thermal resistance, and are carried highlight extraction efficiency.Raceway groove 37a or 37b can have and intermediate layer 341 identical or different materials.
Fig. 4 discloses the embodiment according to another horizontal light-emitting component of the present invention.Compared to light-emitting component shown in Figure 11, originally, in present embodiment, after the growth of finishing semiconductor buffer layer 112 and semiconductor light emitting structure 12, removed fully in order to the growth substrate of growing semiconductor resilient coating 112 and semiconductor light emitting structure 12.The detailed structure of light-emitting component 4 comprises: carrier 13; Intermediate layer 141 is formed on the carrier 13; Reflector 142 is formed on the intermediate layer 141; Electric current dispersion layer 49 is formed on the reflector 142; Semiconductor buffer layer 112 is formed on the electric current dispersion layer 49; Semiconductor light emitting structure 12 is formed on the first area of semiconductor buffer layer 112, comprises first conductive-type semiconductor layer 121, active layer 122 and second conductive-type semiconductor layer 123; First conductor pads 15 is formed on second conductive-type semiconductor layer 123; Second conductor pads 16 is formed on the second area of semiconductor buffer layer 112; A plurality of conducting channels 47 penetrate semiconductor buffer layer 112, to electrically connect with semiconductor light emitting structure 12; Wherein conductive channel 47 extends to a degree of depth of this semiconductor light emitting structure 12, and a plurality of conducting channels 47 of a part are formed between second conductor pads 16 and the electric current dispersion layer 49 and electrically conduct with formation; A plurality of conducting channels 47 of another part between first conductive-type semiconductor layer 121 and electric current dispersion layer 49 with scattered current.Conducting channel 47 and electric current dispersion layer 49 are transparent conductive material, comprise metal oxide, for example are the good semiconductor layer of tin indium oxide or conductivity, for example the GaP of doping carbon, silicon or magnesium or GaN material.Light-emitting component 4 also comprises ohmic contact layer 48 and is formed between the raceway groove 47 and first conductive-type semiconductor layer 121, to reduce junction resistance; The material of ohmic contact layer 48 can be the semiconductor layer of high carrier (electronics or hole) concentration.Be to keep the reliability of technology, semiconductor buffer layer 112 has a thickness, and preferably, the thickness of semiconductor buffer layer 112 is greater than 2 μ m, avoiding in the removal process of growth substrate, because of the variation of technology causes semiconductor light emitting structure 12 to be damaged.The thickness of semiconductor buffer layer 112 is between 2 to 20 μ m; Be preferably between 2 to 10 μ m.
Fig. 5 A to 5G discloses the process of the light-emitting component 2c that forms Fig. 2 C, comprises following steps:
1. shown in Fig. 5 A, growth substrate 11 at first is provided, and on growth substrate 11 growing semiconductor resilient coating 112, semiconductor light emitting structure 12 in regular turn, comprise first conductive-type semiconductor layer 121, active layer 122, reach second conductive-type semiconductor layer 123 in a side of growth substrate 11, then remove the semiconductor light emitting structure of a part, with the surface of exposed a part of first conductive-type semiconductor layer 121 with the photoetching etching mode;
2. shown in Fig. 5 B, with CO
2The surface of first conductive-type semiconductor layer 121 that laser radiation is exposed is to form second raceway groove 181;
3. shown in Fig. 5 C, provide support body 19, and be attached at the surface of semiconductor light emitting lamination by an adhesion coating 191;
4. shown in Fig. 5 D, the opposite side that grinds growth substrate 11 to predetermined thickness forming thin substrate 111, and expose second raceway groove 181;
5. shown in Fig. 5 E, inwardly form the degree of depth that a plurality of first raceway grooves 17 penetrate thin substrate 111 and extend to semiconductor buffer layer 112 from the opposite side of thin substrate, be preferably 0.1～1 μ m, wherein, the method that forms raceway groove comprises with laser beam irradiation;
6. shown in Fig. 5 F, fill transparent material or form the cavity in first raceway groove 17, then form the surface of reflector 142 in thin substrate 111;
7. provide carrier 13 and intermediate layer 141 to be formed on the carrier;
8. attach intermediate layer 141 and carrier 13 to the reflector 142;
9. shown in Fig. 5 G, remove adhesion coating 191 and supporter 19; And
10. shown in the light-emitting component 2c of Fig. 2 C, the covering electric conducting material makes in second raceway groove 181 and becomes conduction 28c, and forms first conductor pads 15 on second conductive-type semiconductor layer 123, and forms the second conductor pads 26a in the outer surface of carrier 13.
The abrasive method of step 4 comprises chemico-mechanical polishing (chemical mechanical polishing; CMP) method, the utilization chemical-mechanical polisher, by grinding pad and chemical grinding liquid (chemicalslurry), simultaneously with physical property and chemical remove substrate.In one embodiment of the invention, the material of growth substrate is the sapphire of about 200～400 μ m of thickness, and chemical grinding liquid comprises the chemically reactive chemical grinding particle of tool, for example Silica (tripoli) colloid, be distributed in the KOH solution, and in grinding, produce Al with the sapphire reaction
2Si
2O
7And by worn.In one embodiment, the colloid size can be selected below the diameter 0.1 μ m, to obtain smooth surface; In another embodiment, the colloid size can be selected between diameter 0.1 μ m to the 1 μ m, to obtain the diffusing surface with the emission wavelength similar sizes.Have grinding efficiency concurrently and keep the good homogeneous degree for reaching, and avoid overmastication and damage semiconductor light emitting structure 12, use grinding rate lapping mode faster in grinding initial stage, for example use the traditional mechanical milling apparatus, grind substrate fast extremely near desired value in pure mechanical lapping mode, for example grinding rate is about 100 μ m/hr, sapphire substrate is ground to about 60 μ m (desired value is 20 μ m) fast, re-use chemical-mechanical polisher, grind in the chemico-mechanical polishing mode, grind the uniformity and precision to improve, for example with the Silica colloidal grinding of the about 1 μ m of diameter, grinding rate is about 60 μ m/hr.In addition, if desire to grind fully and remove growth substrate (as the embodiment of Fig. 4 of the present invention), and stop on the semiconductor buffer layer 112, the material of semiconductor buffer layer 112 can be selected the material that Silica is not had chemical reactivity or chemical reactivity difference for use, be main material for example for gallium nitride (GaN), with the layer that stops as the removal sapphire substrate, and the more tiny colloidal grinding of use, the Silica colloid of the about 0.1 μ m of diameter for example, with improve sapphire substrate to the selection of semiconductor buffer layer 112 than (ratio of the grinding rate of the grinding rate of sapphire substrate and semiconductor buffer layer 112), it is about 6 μ m/hr to sapphire grinding rate; Grinding rate with GaN semiconductor buffer layer 112 is about 1 μ m/hr; Sapphire substrate is about 6 to the selection ratio of GaN semiconductor buffer layer 112.
In the intermediate layer 141 of step 9 is that adhesion coating is in order to adhesion carrier 13 and thin substrate 111; Adhesion coating 141 can be organic adhesion coating or metal adhesion coating.In another embodiment, intermediate layer 141 is for electroplating inculating crystal layer, and carrier 13 electroplates and be formed at this and electroplate on inculating crystal layer, and the material of electroplating the carrier 13 that forms comprises electro-coppering; Intermediate layer 141 more can comprise the diffusion barrier layer and be formed between reflector 142 and the described plating inculating crystal layer, influences material behavior with inhibitory reflex layer 142 with the mutual diffusion of carrier 13.
Fig. 6 A to 6C discloses the device and method that forms raceway groove about the laser light irradiation of step 2 or step 5.Comprise first material 61 and second material 62, laser 63, laser pickoff 64 and data operation processing unit 65 for traditional schematic diagram that measures the elliptical polarizer 6 of thickness comprises laminated construction to be measured as shown in Figure 6A, be used to form the preceding thickness that measures first material 61 and second material 62 of raceway groove.Please also refer to Fig. 6 B and Fig. 6 C and disclose the method that forms raceway groove according to the present invention, may further comprise the steps:
1. provide laminated construction comprise first material layer 61 (for example for GaN or as Fig. 2 C 121 and 112) and second material layer 62 (for example be Sapphire or as Fig. 2 C 111);
2. record the film thickness value T1 of first material layer 61, and the film thickness value T2 of second material layer 62;
3. use laser 66 to remove to shine and make the raceway groove of formation, to expose second material layer 62 near the T1 degree of depth in first irradiation area of first material layer 61 with the combination of first laser parameter; And
4. with the combination of second laser parameter, formed raceway groove in previous step removes second irradiation area that shines in second material layer 62, makes the raceway groove of formation near (T1+T3) degree of depth, wherein T3≤T2.
Aforesaid first and second laser parameter combination comprises laser species, intensity, pulse period t
Pulse, parameter setting such as burst length width W, adjusting light-struck intensity of laser and irradiation time, the degree of depth that removes with control and remove efficient.
Cited each embodiment of the present invention in order to explanation the present invention, is not in order to limit the scope of the invention only.Anyone is to any apparent and easy to know modification that the present invention did or change neither disengaging spirit of the present invention and scope.
Claims (10)
1. semiconductor light-emitting elements comprises:
One carrier;
The semiconductor ray structure is formed on this carrier;
One conductive channel extends to the degree of depth of this semiconductor light emitting structure;
One first conductor pads sees through this conductive channel and this semiconductor light emitting structure and electrically connects; And
One second conductor pads electrically connects this semiconductor light emitting structure.
2. light-emitting component as claimed in claim 1 also comprises an ohmic contact layer, is formed between this conductive channel and this semiconductor light emitting structure.
3. light-emitting component as claimed in claim 1 also comprises an intermediate layer, is formed between this conductive channel and this carrier.
4. light-emitting component as claimed in claim 3 also comprises a reflector, is formed between this semiconductor light emitting structure and this intermediate layer.
5. light-emitting component as claimed in claim 1, wherein this conductive channel is formed on this carrier and this conductive channel and this first conductor pads are formed at the same side of this carrier.
6. semiconductor light-emitting elements comprises:
One carrier;
The semiconductor ray structure is formed on this carrier;
One conduction pathway extends to the degree of depth of this semiconductor light emitting structure, electrically connects this semiconductor light emitting structure and this carrier;
One first conductor pads electrically connects this semiconductor light emitting structure; And
One second conductor pads electrically connects this carrier;
Wherein, this first conductor pads and second conductor pads are formed at the phase heteropleural of this carrier respectively.
7. light-emitting component as claimed in claim 6 also comprises an intermediate layer, is formed between this conduction pathway and this carrier.
8. light-emitting component as claimed in claim 7, wherein this conduction pathway has identical material with this intermediate layer.
9. light-emitting component as claimed in claim 7 also comprises a reflector, is formed between this semiconductor light emitting structure and this intermediate layer.
10. light-emitting component as claimed in claim 9, wherein this conduction pathway penetrates this reflector.
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| CN2008100032454A Division CN101499505B (en) | 2008-01-28 | 2008-01-28 | Semiconductor luminous element with thinning structure and its production method |
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Cited By (1)
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|---|---|---|---|---|
| CN105355743A (en) * | 2015-12-14 | 2016-02-24 | 厦门市三安光电科技有限公司 | Light-emitting diode and manufacturing method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN1368764A (en) * | 2001-01-31 | 2002-09-11 | 广镓光电股份有限公司 | Structure of hihg-brightness blue light emitting crystal grain |
| CN100350642C (en) * | 2004-03-26 | 2007-11-21 | 晶元光电股份有限公司 | Organic bonding luminous assembly with verticals tructure |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105355743A (en) * | 2015-12-14 | 2016-02-24 | 厦门市三安光电科技有限公司 | Light-emitting diode and manufacturing method thereof |
| CN105355743B (en) * | 2015-12-14 | 2018-04-17 | 厦门市三安光电科技有限公司 | Light emitting diode and preparation method thereof |
| US10199538B2 (en) | 2015-12-14 | 2019-02-05 | Xiamen Sanan Optoelectronics Technology Co., Ltd. | Light emitting diode and fabrication method thereof |
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