CN102136419B - Method for improving uniformity of sidewall angle - Google Patents
Method for improving uniformity of sidewall angle Download PDFInfo
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- CN102136419B CN102136419B CN 201010104013 CN201010104013A CN102136419B CN 102136419 B CN102136419 B CN 102136419B CN 201010104013 CN201010104013 CN 201010104013 CN 201010104013 A CN201010104013 A CN 201010104013A CN 102136419 B CN102136419 B CN 102136419B
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Abstract
The invention discloses a method for improving the uniformity of a sidewall angle (SWA), which is applied to a bottom anti-reflection coating layer open (Barc open) process in the Poly Etch process. The method comprises the following steps of: generating the corresponding relation between the thickness of a Poly film and an etch environmental parameter used in the Barc open process according to an experimental statistic value, and measuring the thickness of the Poly film on a wafer before the Barc open process is performed on the wafer; and setting a value of the etch environmental parameter used in the Barc open process according to the measured thickness of the Poly film and the corresponding relation between the thickness of the Poly film and the etch environmental parameter used in the Barc open process, and performing the Barc open process by using the etch environmental parameter of a set value. By the method, the uniformity of the SWA obtained after the Poly Etch process can be improved effectively, the operating performance of final circuit devices can be improved obviously, and the cost is relatively low.
Description
Technical field
The present invention relates to the semiconductor machining manufacturing technology, be specifically related to improve the method for uniformity of sidewall angle.
Background technology
At present, integrated circuit technique has entered the very lagre scale integrated circuit (VLSIC) epoch, along with the process of integrated circuit is more and more meticulousr, has all proposed higher finer specification requirement for being worked into various subsequent treatment process from wafer (wafer).Wherein, the key size evenness of Poly film (Critical Dimensional Uniformity, CDU) be exactly the important indicator parameter of weighing Poly Etch operation crudy quality, whether described critical size is even, can affect to a great extent the service behaviour of yield (yield) and the gate circuit that final processing obtains of wafer, so each integrated circuit fabrication process commercial city is striving to find the method that improves CDU.
The thickness of poly film is one of them parameter of Poly film critical size, under the prior art condition, the minimal error scope that this parameter can reach is ± 3%---such as, be the poly film of 100 nanometers for designing requirement thickness, the getable size of present actual machining is greatly in the scope of 97～103 nanometers, and through measurement and statistics to the actual course of processing, described 3% error range is in the process of carrying out grid etch (Poly Etch) operation, can cause the poly critical size after the etching ± 2% error to occur, this moment, poly critical size major embodiment was side wall angle (Sidewall Angle, SWA), the cross-section structure on the wafer surface that forms after the process Poly Etch operation as shown in Figure 1, described SWA is the angle of residual poly film and gate oxide layers (Gate Oxide)---and (being designing requirement) described SWA should be 90 degree in the ideal case, ± 2% error occurs as benchmark take 90 degree because the error of poly film thickness can cause processing the SWA that obtains.
Further, the size of described SWA has critical impact for the device performance that finally obtains again---and by actual measurement statistics and theoretical calculating, 5% saturation current deviation appears in the metal-oxide-semiconductor that the error of SWA appearance 2% will cause final processing to obtain.As seen, the circuit devcie that obtains for final processing of the CDU of SWA and the service behaviour of whole integrated circuit have tremendous influence.
The drift of the device performance that causes for the error that reduces SWA, industry attempt to adopt error range by reducing Poly film thickness to reduce the method for SWA excursion, but in actual applications, the error range of further dwindling Poly film thickness ± 3% almost can't realize---reason mainly is the cost control aspect, in order further to dwindle this error of 3%, just need to improve the design accuracy of whole production line and reduce systematic error, and this just means that for the process equipment on the production line several times even ten increase equipment cost several fold, thereby is difficult to use in actual industrial production.
Summary of the invention
The invention provides a kind of method that improves uniformity of sidewall angle, the uniformity of the SWA that obtains after can Effective Raise Poly Etch, and can not cause the remarkable increase of cost.
For achieving the above object, technical scheme of the present invention specifically is achieved in that
A kind of method that improves uniformity of sidewall angle, the bottom antireflective coating that is applied in the grid etch flow process is opened Barc open operation, and the method comprises:
The corresponding relation of the etching environmental parameter of using in the thickness that generates the grid film according to the experiment statistics value and the Barc open operation, before wafer is carried out Barc open, the thickness of grid film on the measurement wafer;
Corresponding relation according to the etching environmental parameter of using in the thickness of the thickness of the grid film that measures and described grid film and the Barc open operation, set the value of the etching environmental parameter of using in the Barc open operation, and adopt the etching environmental parameter of set point to carry out Barc open operation.
The described method that generates the corresponding relation of the etching environmental parameter of using in the thickness of grid film and the Barc open operation according to the experiment statistics value comprises:
Obtain by experiment for various grid film thicknesses, can access the empirical value of the etching environmental parameter of desirable side wall angular shape through Barc open operation;
Utilize the empirical value of described grid film thickness and corresponding etching environmental parameter thereof, match obtains representing the curve of this etching environmental parameter corresponding relation of using in described grid film thickness and the Barc open operation.
Described etching environmental parameter comprises: the combination of one or more parameters in the concentration of etching gas, the air pressure of etching gas, flow and the bias voltage.
When described etching environmental parameter was bias voltage, less than 0 straight line, its slope and intercept were determined by making technology the corresponding relation of the etching environmental parameter of using in the thickness of described grid film and the Barc open operation as slope in the two-dimensional coordinate plane.
As seen from the above technical solutions, the method of the raising SWA uniformity that the embodiment of the invention provides, generate in advance the corresponding relation of the etching environmental parameter of using in the thickness of grid film and the Barc open operation according to the experiment statistics value, afterwards in the process of carrying out Barc open, according to thickness and the described corresponding relation when the normal-gate film that measure, determine the value of the etching environmental parameter that in this Barc open operation, should use and carry out Barc open operation, thereby can utilize this etching environmental parameter to come the thickness of poly film this to affect that the factor of the SWA uniformity compensates control after the etching, the uniformity of having eliminated in the Barc open operation process SWA that the variation owing to poly film causes descends, the uniformity of the SWA that obtains after can Effective Raise Poly Etch, thereby significantly improve the service behaviour of the circuit devcie that finally obtains, simultaneously, the method realizes simple and needn't carry out a large amount of scrap builds and upgrading to apparatus for production line, can not cause the remarkable increase of equipment cost.
Description of drawings
Fig. 1 is the cross-sectional view through the wafer that forms after the Poly Etch operation.
Fig. 2 is the cross-sectional view of carrying out Barc open wafer before in the embodiment of the invention.
Fig. 3 is the cross-sectional view of finishing Barc open wafer afterwards in the embodiment of the invention.
Fig. 4 is the schematic flow sheet that improves the method for uniformity of sidewall angle in the embodiment of the invention.
Fig. 5 is the schematic diagram of the corresponding relation curve of the bias voltage that uses in different poly film thickness and the Barc open operation before the Barc open in the embodiment of the invention.
Embodiment
For making purpose of the present invention, technical scheme and advantage clearer, referring to the accompanying drawing embodiment that develops simultaneously, the present invention is described in more detail.
The embodiment of the invention provides a kind of method that improves uniformity of sidewall angle, be applied to open bottom antireflective coating (Bottom anti-reflection coating layer in the Poly Etch flow process, Barc layer) operation, the described Barc of opening layer is a requisite procedure among the Poly Etch, and this operation is also referred to as Barc open usually.For the ease of understanding the present invention, the below briefly introduces first flow process and the Barc open operation of Poly Etch in the prior art:
Carry out the cross-section structure of Barc open wafer before as shown in Figure 2, wherein, that Barc layer top covers is photoresist (Photolithography Resistance, PR), the zone of Barc laye below is Poly film, it then is substrate reactivity district (Active Area, AA) under the Poly film zone.In the prior art, carrying out ashing after at first according to the exposing patterns of setting PR being exposed removes photoresist again, afterwards the Barc layer that comes out is carried out Barc open by etching, concrete grammar is for using etching gas that Barc layer is carried out etching, when etching arrives Poly film surface, stop Barc open operation.At this moment, finish Bare open wafer cross-section structure as shown in Figure 3.
In existing Poly Etch flow process, what need after the Barc open operation to carry out is main etching (Main Etch, ME) operation and over etching (Over Etch, OE) operation, related procedure and method and the application there is no direct correlation, so locate no longer to discuss in detail.The method of the raising SWA uniformity that the embodiment of the invention provides mainly is the improvement that Barc open operation of the prior art is carried out, its flow process as shown in Figure 4, comprising:
Step 401: the corresponding relation of the etching environmental parameter of using in the thickness that generates the grid film according to the experiment statistics value and the Barc open operation, before wafer is carried out Barc open, measure the thickness that current wafer goes up poly film;
Step 402: according to the thickness of the grid film that measures and the corresponding relation of the bias voltage (Bias Power) that uses in the thickness of the grid film of setting up in advance and the Barc open operation, obtain the bias voltage value that to set in the Barc open operation and carry out Barc open operation.
According in the preamble for the introduction of the Barc open operation under the prior art, those skilled in the art are to be understood that, when using etching gas that Barc layer is carried out etching, etching effect is subject to multiple etching environment effect of parameters, such as the etching gas concentration in the reaction chamber, air pressure, flow and bias voltage etc., and through the statistical analysis after the experiment, find to be bias voltage for the most significant environmental parameter of the impact of the SWA uniformity after the etching wherein, therefore determine by a large amount of experimental datas that poly film for various different-thickness has the optimal compensation effect in advance and so that the value of the highest bias voltage of the SWA uniformity behind the Barc open, and according to experimental data the corresponding relation of the bias voltage that uses in poly film thickness different before the Barc open and the Barc open operation is set up in match, as shown in Figure 5, transverse axis (x axle) expression poly film thickness, the longitudinal axis (y axle) expression bias voltage, in Fig. 5, A, B, C, D and E are the sampled point that obtains in the actual test process, wherein: put A and represent when poly film thickness is 1010 dust, it is 240 volts that experiment records the compensation bias voltage with the optimal compensation effect; Put B and represent when poly film thickness is 1023 dust, the compensation bias voltage is 220 volts; Put C and represent when poly film thickness is 1036 dust, the compensation bias voltage is 200 volts; Put D and represent when poly film thickness is 1049 dust, the compensation bias voltage is 180 volts; Put E and represent when poly film thickness is 1056 dust, the compensation bias voltage is 158 volts; According to the result that above-mentioned sample is measured, can simulate the curve y=-1.7231x+1982 of a corresponding relation, R
2=0.9908, statistically, R
2Statistics greater than 0.95 all is that effectively i.e. matched curve is significant.And according to the curve that this match generates, just can determine the poly film for any thickness, the value of the compensation bias voltage that in Barc open operation, should adopt.Easily understand, the parameter of described curve is only non-limiting for giving an example, the straight line of described expression corresponding relation, and the concrete value of its slope and intercept changes along with the different of making technology.
It is to be noted, what adopt in the embodiment of the invention is to come thereby the variation of poly film thickness is compensated the execution mode that control improves the uniformity of the SWA that finally obtains by bias voltage, but in actual applications, can use other environmental parameter equally, such as etching gas concentration or air pressure etc., perhaps be combined with simultaneously various environmental parameters and jointly compensate.
Those skilled in the art easily understand, in the technological process that wafer is processed, need to repeatedly expose and Etch, and each exposure and Etch operation all may exert an influence to the CDU of poly, in the step 402 of the embodiment of the invention, adopt the method that this environmental parameter of bias voltage in the Barc open operation is adjusted to compensate in the Barc open operation SWA uniformity that the variation owing to poly film causes and descended, thereby improved the CDU of the SWA that finally obtains among the wafer.In fact, can also in other etching process (such as ME or OE) of Poly Etch flow process, similarly compensate control.
By as seen above-mentioned, the method of the raising SWA uniformity that the embodiment of the invention provides, generate in advance the corresponding relation of the etching environmental parameter of using in the thickness of grid film and the Barc open operation according to the experiment statistics value, afterwards in the process of carrying out Barc open, according to thickness and the described corresponding relation when the normal-gate film that measure, determine the value of the etching environmental parameter that in this Barc open operation, should use and carry out Barc open operation, thereby can utilize this etching environmental parameter to come the thickness of poly film this to affect that the factor of the SWA uniformity compensates control after the etching, the uniformity of having eliminated in the Barc open operation process SWA that the variation owing to poly film causes descends, the uniformity of the SWA that obtains after can Effective Raise Poly Etch, thereby significantly improve the service behaviour of the circuit devcie that finally obtains, simultaneously, the method realizes simple and needn't carry out a large amount of scrap builds and upgrading to apparatus for production line, can not cause the remarkable increase of equipment cost.
Claims (3)
1. method that improves uniformity of sidewall angle, the bottom antireflective coating that is applied in the grid etch flow process is opened Barc open operation, it is characterized in that, and the method comprises:
Obtain by experiment for various grid film thicknesses, can access the empirical value of the etching environmental parameter of the desirable side wall angular shape of grid film through Barc open operation;
Utilize the empirical value of the etching environmental parameter of described grid film thickness and correspondence thereof, match obtains representing the curve of this etching environmental parameter corresponding relation of using in described grid film thickness and the Barc open operation, as the corresponding relation of the etching environmental parameter of using in the thickness of grid film and the Barc open operation;
Before wafer is carried out Barc open, measure the thickness of grid film on the wafer;
Corresponding relation according to the etching environmental parameter of using in the thickness of the thickness of the grid film that measures and described grid film and the Barc open operation, set the value of the etching environmental parameter of using in the Barc open operation, and adopt the etching environmental parameter of set point to carry out Barc open operation.
2. method according to claim 1 is characterized in that, described etching environmental parameter comprises:
The combination of one or more parameters in the concentration of etching gas, the air pressure of etching gas, flow and the bias voltage.
3. method according to claim 1, it is characterized in that, when described etching environmental parameter is bias voltage, less than 0 straight line, its slope and intercept are determined by making technology the corresponding relation of the etching environmental parameter of using in the thickness of described grid film and the Barc open operation as slope in the two-dimensional coordinate plane.
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1905134A (en) * | 2005-07-25 | 2007-01-31 | 台湾积体电路制造股份有限公司 | Controlling method for gate formation of semiconductor device |
| CN101315885A (en) * | 2007-05-28 | 2008-12-03 | 中芯国际集成电路制造(上海)有限公司 | Method for confirming red line limit of semiconductor device grid relict |
| CN101599430A (en) * | 2008-06-03 | 2009-12-09 | 中芯国际集成电路制造(北京)有限公司 | The formation method of grating of semiconductor element and the control system of grid etch |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1905134A (en) * | 2005-07-25 | 2007-01-31 | 台湾积体电路制造股份有限公司 | Controlling method for gate formation of semiconductor device |
| CN101315885A (en) * | 2007-05-28 | 2008-12-03 | 中芯国际集成电路制造(上海)有限公司 | Method for confirming red line limit of semiconductor device grid relict |
| CN101599430A (en) * | 2008-06-03 | 2009-12-09 | 中芯国际集成电路制造(北京)有限公司 | The formation method of grating of semiconductor element and the control system of grid etch |
Non-Patent Citations (1)
| Title |
|---|
| Hyung Lee 等.Advanced Profile Control and the Impact of Sidewall Angle at Gate Etch for Critical Nodes.《Proc. of SPIE》.2008,第6922卷全文. * |
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