CN102134650B - Preparation process of light electronic packaging material - Google Patents
Preparation process of light electronic packaging material Download PDFInfo
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- CN102134650B CN102134650B CN2010106004703A CN201010600470A CN102134650B CN 102134650 B CN102134650 B CN 102134650B CN 2010106004703 A CN2010106004703 A CN 2010106004703A CN 201010600470 A CN201010600470 A CN 201010600470A CN 102134650 B CN102134650 B CN 102134650B
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- electroslag
- silicon
- aluminium
- slag charge
- consumable electrode
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P10/00—Technologies related to metal processing
- Y02P10/25—Process efficiency
Abstract
The invention discloses a preparation process of a light electronic packaging material which consists of aluminum and silicon, wherein the content of silicon in mass percent is 30-80% and the balance is aluminum. The process comprises the steps of: mixing the aluminum and the silicon and then placing the mixture in a vacuum induction furnace for smelting at a temperature of 800-1300 DEG C so as to obtain a consumable electrode bar; loading in an electric slag furnace for electric slag smelting, wherein the work voltage of the electric slag furnace is 20-40V, the work current is 1-10kA, the arc strike block is a pure aluminum block and the arc strike slag is CaF2; adding electric slag which is thermally insulated for 4-8h at a temperature within 500-800 DEG C in the smelting process, wherein the addition of the electric slag is 3-4% of the quality of the consumable electrode bar and the electric slag consists of 20-30% of Na3A1F6, 25-35% of NaC1 and 45-55% of KC1 in mass percent; and annealing the aluminum-silicon cast ingot which is rapidly solidified by a water cooling crystallizer for 3-5h at a temperature within 325-375 DEG C after the smelting of the electric slag.
Description
Technical field
The present invention relates to a kind of preparation technology of lightweight electronic package material, material is high sial, belongs to the Electronic Packaging field.
Background technology
In recent years electronics at a high speed, small-sized, superpower, high reliability development, semiconducter device is integrated, extensive to height, splintery, superpower development, circuit layout then develops rapidly to directions such as fine, short-term, low resistances.In order to make computer run speed faster; The more circuit of just need on integrated circuit substrate, arranging, this heat that will cause producing in the integrated package unit volume increases considerably, and the power of the every required transmission of substrate also will improve significantly; If these heats can not distribute rapidly through encapsulating structures such as substrates; Integrated package will be difficult to works better, when situation is serious, even can cause integrated package to be burnt out.Temperature variation when therefore working and be two key issues that large-scale integrated circuit need be faced by the thermal stresses that thermal expansion coefficient difference causes, its solution route has two: the one, packaging mechanism reasonable in design; The 2nd, select suitable material, improve material property.
The electronic package material of processing with high silica-alumina material has high strength and stiffness; Can plate with gold and silver, copper, nickel, can weld, be easy to accurate machining with base material; High-performance such as nontoxic meets the requirement that the Electronic Packaging technology develops towards miniaturized, lightweight, High Density Packaging direction.In addition, aluminium and silicon content on earth are all quite abundant, mature preparation process; With low cost; So the aluminum silicon alloy material, receives more and more people's attention as the electronic package material that a kind of potential has broad prospect of application, particularly at aerospace field.Silumin is as the lightweight electronic package material, and its advantage outstanding behaviours exists: the one, can realize the material physical property design through changing alloying constituent; The 2nd, said material be aircraft with the lightest METAL-MATRIX MATERIAL FOR ELECTRONIC PACKAGING of quality, have the excellent comprehensive performance concurrently; The 3rd, can realize low-cost requirement.
The method of the high sial electronic package material of preparation mainly contains powder metallurgic method and spray deposition at present; But these two kinds of preparation technology's more complicated; And cost is higher relatively, and therefore expectation can be developed the preparation technology that a kind of process stabilizing is simple, cost is lower, material preparation technology is good.
Summary of the invention
Technical problem to be solved by this invention provides a kind of preparation technology of lightweight electronic package material; The electronic package material that is obtained by the present invention has high silica-alumina material high heat conductance, resistance to air loss; Mechanical property such as high-flexural strength and ultimate compression strength; Keep the lower thermal expansivity of material, make material have good processibility simultaneously, the advantage that the preparation cost of material is low.
In order to address the above problem, the present invention adopts following technical scheme:
A kind of preparation technology of lightweight electronic package material, its process step is following:
(a) composition of this electronic package material is made up of aluminium and silicon, and wherein the mass percentage content of silicon is 30%-80%, and all the other are aluminium, at first aluminium and silicon is mixed to be placed under 800 ℃～1300 ℃ and processes the consumable electrode rod through vacuum induction melting;
(b) the consumable electrode rod electroslag furnace of packing into is carried out electroslag melting, the electroslag furnace WV is 20-40V, and working current is 1～10kA, and the striking piece is the fine aluminium piece, and the striking slag charge is CaF
2, adding the electroslag slag charge that is incubated 4～8 hours down through 500 ℃～800 ℃ in the fusion process, the add-on of electroslag slag charge is 3%～4% of a consumable electrode rod quality, described electroslag slag charge is by Na
3AlF
6, NaCl and KCl form, the mass percent of electroslag slag charge component is: 20%～30%Na
3AlF
6, 25%～35%NaCl, 45%～55%KCl;
(c) electroslag melting is after the aluminium silicon ingot casting of water mold rapid solidification promptly obtains finished product through machining 325 ℃～375 ℃ anneal after 3～5 hours.
Beneficial effect
The present invention proposes a kind of simple operational path, the electric current resistance heat that the fusion slag charge produces of flowing through carries out melting as thermal source to aluminum silicon alloy during through esr, thereby purifies alloy.Through the water mold rapid solidification, obtain even tiny primary silicon and reach the al-si eutectic phase constitution mutually again, through subsequent heat treatment, material structure is dispersion stability more.The high sial electronic package material that obtains by this method, performance characteristics is following:
Thermal expansivity is low: 7 * 10
-6/ ℃～17 * 10
-6/ ℃;
Density is little: 2.4 * g/cm
3～2.56 * g/cm
3
Thermal conductivity (during 300K) height: 120W/mK～180W/mK;
Good mechanical performance: bending strength＞140MPa; Ultimate compression strength＞100MPa; Ys＞100MPa;
Other excellent properties: specific conductivity height, good compactness, have certain high high-temp stability.
It is thus clear that its integrated performance index obviously is superior to the conditional electronic packaged material.To compare esr preparation method technology simple with aluminium Si powder metallurgy method and spray deposition, and cost is relatively low, can scale operation.
In sum, the electroslag remelting process that the present invention adopts is the high sial tissue of refinement significantly, improves its thermal conductivity, density and mechanical property, reduces its thermal expansivity, obtains the lightweight electronic package material.
Description of drawings
Fig. 1 be siliceous massfraction that the present invention produces be 50% aluminium silicon electronic package material primary silicon mutually and al-si eutectic organize metallograph.
Fig. 2 is that siliceous massfraction that the present invention produces is that the eutectic structure gold that distributes of 50% aluminium silicon electronic package material disperse after heat treatment is as photo.
Embodiment
Embodiment 1
With 7: 3 (Al-30%Si) melting in 830 ℃ of vacuum induction furnaces of pressing mass ratio of commercial-purity aluminium and HIGH-PURITY SILICON, be cast in the metal die that diameter is 60mm after the fusing evenly, process aluminium silicon consumable electrode rod, length is 1m; With mass percent is 21%Na
3AlF
6, 27%NaCl, 52%KCl mix, and, and remains in the baking oven as the electroslag slag charge 550 ℃ of insulations 6 hours always, taking-up before electroslag is handled is to guarantee drying; The consumable electrode rod electroslag furnace of packing into is carried out melting, and the electroslag furnace WV is 40V, and working current is 1.5kV, and the striking piece is the fine aluminium piece, and the striking slag charge is CaF
2, add the electroslag slag charge in the fusion process as required and accomplish until the electroslag process; Electroslag melting after the aluminium silicon ingot casting of water mold rapid solidification 325 ℃ of anneal 3.5 hours, can feed argon shield therebetween, is promptly obtained containing the finished product of 30%Si through machining after the thermal treatment.
Embodiment 2
With 1: 1 (Al-50%Si) melting in 1040 ℃ of vacuum induction furnaces of pressing mass ratio of commercial-purity aluminium and HIGH-PURITY SILICON, be cast in the metal die that diameter is 60mm after the fusing evenly, process aluminium silicon consumable electrode rod, length is 1m; With mass percent is 23%Na
3AlF
6, 25%NaCl, 52%KCl mix, and, and remains in the baking oven as the electroslag slag charge 550 ℃ of insulations 7 hours always, before electroslag, take out, to guarantee drying; The consumable electrode rod electroslag furnace of packing into is carried out melting, and the electroslag furnace WV is 40V, and working current is 2kV, and the striking piece is the fine aluminium piece, and the striking slag charge is CaF
2, add the electroslag slag charge in the fusion process as required and accomplish until the electroslag process; With electroslag melting after the aluminium silicon ingot casting of water mold rapid solidification promptly obtains containing the finished product of 50%Si through machining after the thermal treatment in 4 hours of 340 ℃ of anneal.
Embodiment 3
With 2: 3 (Al-60%Si) melting in 1160 ℃ of vacuum induction furnaces of pressing mass ratio of commercial-purity aluminium and HIGH-PURITY SILICON, be cast in the metal die that diameter is 60mm after the fusing evenly, process aluminium silicon consumable electrode rod, length is 1m; With mass percent is 25%Na
3AlF
6, 27%NaCl, 48%KCl mix, and, and remains in the baking oven as the electroslag slag charge 550 ℃ of insulations 6 hours always, before electroslag, take out, to guarantee drying; The consumable electrode rod electroslag furnace of packing into is carried out melting, and the electroslag furnace WV is 40V, and working current is 2.5kV, and the striking piece is the fine aluminium piece, and the striking slag charge is CaF
2, constantly add the electroslag slag charge in the fusion process and accomplish until the electroslag process; With electroslag melting after the aluminium silicon ingot casting of water mold rapid solidification promptly obtains containing the finished product of 60%Si through machining after the thermal treatment in 4.5 hours of 360 ℃ of anneal.
Embodiment 4
With 3: 7 (Al-70%Si) melting in 1220 ℃ of vacuum induction furnaces of pressing mass ratio of commercial-purity aluminium and HIGH-PURITY SILICON, be cast in the metal die that diameter is 60mm after the fusing evenly, process aluminium silicon consumable electrode rod, length is 1m; With mass percent is 22%Na
3AlF
6, 32%NaCl, 46%KCl mix, and, and remains in the baking oven as the electroslag slag charge 525 ℃ of insulations 8 hours always, before electroslag, take out, to guarantee drying; The consumable electrode rod electroslag furnace of packing into is carried out melting, and the electroslag furnace WV is 40V, and working current is 3kV, and the striking piece is the fine aluminium piece, and the striking slag charge is CaF
2, constantly add the electroslag slag charge in the fusion process and accomplish until the electroslag process; With electroslag melting after the aluminium silicon ingot casting of water mold rapid solidification promptly obtains containing the finished product of 70%Si through machining after the thermal treatment in 5 hours of 375 ℃ of anneal.
The performance of prepared high sial electronic package material:
1. mechanical property
2. physicals
3. thermal expansivity (10
-6/ ℃)
Embodiment 5
A kind of preparation technology of lightweight electronic package material, its process step is following:
(a) composition of this electronic package material is made up of aluminium and silicon; Wherein the mass percentage content of silicon is 30%-80%; All the other are aluminium, at first aluminium and silicon are mixed to be placed under 800 ℃～1300 ℃ and process the consumable electrode rod through vacuum induction melting, in the present embodiment; Mass percentage content according to silicon in aluminium and the silicon is 30%, 70% or 80%, aluminium and silicon is mixed to be placed under 800 ℃, 1200 ℃ or 1300 ℃ process the consumable electrode rod through vacuum induction melting;
(b) the consumable electrode rod electroslag furnace of packing into is carried out electroslag melting, the electroslag furnace WV is 20-40V, and working current is 1～10kA, and the striking piece is the fine aluminium piece, and the striking slag charge is CaF
2, adding the electroslag slag charge that is incubated 4～8 hours down through 500 ℃～800 ℃ in the fusion process, the add-on of electroslag slag charge is 3%～4% of a consumable electrode rod quality, described electroslag slag charge is by Na
3AlF
6, NaCl and KCl form, the mass percent of electroslag slag charge component is: 20%～30%Na
3AlF
6, 25%～35%NaCl, 45%～55%KCl, in the present embodiment, the mass percent of electroslag slag charge component is: 20%Na
3AlF
6, 25%NaCl, 55%KCl, 20%Na
3AlF
6, 35%NaCl, 55%KCl, or 30%Na
3AlF
6, 25%NaCl, 45%KCl;
(c) electroslag melting is after the aluminium silicon ingot casting of water mold rapid solidification promptly obtains finished product through machining 325 ℃～375 ℃ anneal after 3～5 hours.
Claims (1)
1. the preparation technology of a lightweight electronic package material, its process step is following:
(a) composition of this electronic package material is made up of aluminium and silicon, and wherein the mass percentage content of silicon is 30%-80%, and all the other are aluminium, at first aluminium and silicon is mixed to be placed under 800 ℃～1300 ℃ and processes the consumable electrode rod through vacuum induction melting;
(b) the consumable electrode rod electroslag furnace of packing into is carried out electroslag melting, the electroslag furnace WV is 20-40V, and working current is 1～10kA, and the striking piece is the fine aluminium piece, and the striking slag charge is CaF
2, adding the electroslag slag charge that is incubated 4～8 hours down through 500 ℃～800 ℃ in the fusion process, the add-on of electroslag slag charge is 3%～4% of a consumable electrode rod quality, described electroslag slag charge is by Na
3AlF
6, NaCl and KCl form, the mass percent of electroslag slag charge component is: 20%～30%Na
3AlF
6, 25%～35%NaCl, 45%～55%KCl;
(c) electroslag melting is after the aluminium silicon ingot casting of water mold rapid solidification promptly obtains finished product through machining 325 ℃～375 ℃ anneal after 3～5 hours.
Priority Applications (1)
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|---|---|---|---|
| CN2010106004703A CN102134650B (en) | 2010-12-22 | 2010-12-22 | Preparation process of light electronic packaging material |
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|---|---|---|---|
| CN2010106004703A CN102134650B (en) | 2010-12-22 | 2010-12-22 | Preparation process of light electronic packaging material |
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| CN102134650B true CN102134650B (en) | 2012-04-11 |
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| CN106086544B (en) * | 2016-08-08 | 2018-02-13 | 中南大学 | A kind of alloying element strengthens high aluminium silicon composite material and preparation method thereof |
| CN106676333B (en) * | 2016-12-09 | 2018-07-17 | 北京有色金属研究总院 | A kind of radiation hardening high-thermal conductivity electronic packaging material |
| CN112646996A (en) * | 2020-12-02 | 2021-04-13 | 贵州航天新力科技有限公司 | 7-series aluminum alloy material and preparation method of cast ingot thereof |
| CN113528868A (en) * | 2021-07-06 | 2021-10-22 | 常州大学 | Method for eliminating primary silicon in hypereutectic aluminum-silicon alloy by utilizing melt purification effect |
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| CN101613812B (en) * | 2009-07-23 | 2011-05-04 | 上海交通大学 | Slag for removing silicon element in aluminum alloy |
| CN101831556A (en) * | 2010-04-02 | 2010-09-15 | 上海交通大学 | Method for preparing in-situ generated aluminum-base composite based on electroslag remelting process |
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