CN102134491A - Gallium nitride surface corrosion liquid and corrosion method - Google Patents
Gallium nitride surface corrosion liquid and corrosion method Download PDFInfo
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- CN102134491A CN102134491A CN201010565046XA CN201010565046A CN102134491A CN 102134491 A CN102134491 A CN 102134491A CN 201010565046X A CN201010565046X A CN 201010565046XA CN 201010565046 A CN201010565046 A CN 201010565046A CN 102134491 A CN102134491 A CN 102134491A
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- gallium nitride
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- corrosive fluid
- potassium hydroxide
- nitride surface
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Abstract
The invention discloses gallium nitride surface corrosion liquid and a corrosion method. The gallium nitride surface corrosion liquid is prepared by the following steps: heating a 1+/-0.1 mol/l potassium hydroxide solution to 35 DEG C, and dissolving potassium carbonate until the concentration of potassium carbonate reaches 2+/-0.2 mol/l, thereby obtaining the gallium nitride surface corrosion liquid. By using the corrosion liquid, the temperature required by the corrosion technique is low, and the surface condition of the corroded gallium nitride is good.
Description
Technical field
Patent of the present invention relates to a kind of surface corrosion liquid of semiconductor material, specifically is meant a kind of gallium nitride material surface corrosion solution.
Background technology
Gan (GaN) base wide-bandgap semiconductor material is the important materials of opto-electronic devices such as preparation high temperature, superpower, high-frequency electron device and luminotron, ultraviolet detector.GaN base luminotron has great application prospect aspect save energy.And use GaN base semiconductor photon detector to replace valve tube to carry out ultraviolet detection, its great application background is also arranged.Dry etching is one of critical process of preparation gallium nitride-base ultraviolet detector, all can cause bigger physical damnification to material generally speaking; And the wet etching of wet etching, particularly high aluminium component will help to eliminate the damage that dry etching brings, thereby reduce the leakage current of device.There is the technological deficiency (" research of gallium nitride based avalanche photorectifier " of several aspects in early stage potassium hydroxide corrosive fluid, Xu Jintong, Postgraduate School, Chinese Academy of Sciences's doctorate paper), at first need corrode gallium nitride material more than 85 degrees centigrade, reliability to device is influential, and operation the time has the danger of scald; Secondly, the corrosion rear surface is not in good state, and the corrosion pit of hexangle type appears in the surface after the corrosion.The present invention is directed to this problem, developed that corrosion temperature is low, corrosion rear surface state good chemical corrosion liquid.
Summary of the invention
The purpose of this invention is to provide the gallium nitride material surface corrosion chemical solution of using in a kind of gallium nitride semiconductor device course of processing, solve the problem that the corrosion temperature that exists in the prior art is high and the corrosion rear surface is not in good state.
The compound method of corrosive fluid of the present invention is as follows:
1) compound concentration is the potassium hydroxide solution of 1 ± 0.1 mol;
2) potassium hydroxide solution for preparing is heated to 35 degrees centigrade;
3) salt of wormwood is dissolved in potassium hydroxide solution after the heating, make salt of wormwood in solution concentration reach 2 ± 0.2 mol.
The characteristics that adopt the present invention to corrode gallium nitrate based thin-film material are: when solution temperature was 50 ℃, its erosion rate roughly was 0.3 μ m/min.Scanning electron microscope test shows that the corrosion pit of hexangle type does not appear in the surface after the corrosion.
Embodiment
The processing step of the corrosive fluid corrosion gallium nitride material of employing aforesaid method preparation is as follows:
1. the gan corrosive fluid for preparing is heated to 50 ℃.
2. gallium nitride material is immersed in the corrosive fluid, corrodes 0.3 micrometer depth if desired, then after 1 minute, take out.
3. in 25 ℃ of deionized waters, clean 3 times at once after gallium nitride material takes out, remove the potassium ion and the carbanion on surface, stop corrosive nature.
4. high pure nitrogen dries up, and the test depth of corrosion is kept in the loft drier.
Claims (2)
1. a gallium nitride surface corrosive fluid is made up of potassium hydroxide and salt of wormwood, it is characterized in that: described corrosive fluid preparation steps is as follows:
1) compound concentration is the potassium hydroxide solution of 1 ± 0.1 mol;
2) potassium hydroxide solution for preparing is heated to 35 degrees centigrade;
3) salt of wormwood is dissolved in potassium hydroxide solution after the heating, make salt of wormwood in solution concentration reach 2 ± 0.2 mol.
2. one kind is adopted the gallium nitride surface caustic solution of corrosive fluid according to claim 1, it is characterized in that may further comprise the steps:
1) the gan corrosive fluid for preparing is heated to 50 ℃;
2) gallium nitride material is immersed in the corrosive fluid, corrodes 0.3 micrometer depth if desired, then after 1 minute, take out;
3) in 25 ℃ of deionized waters, clean 3 times at once after gallium nitride material takes out, remove the potassium ion and the carbanion on surface, stop corrosive nature;
4) high pure nitrogen dries up, and the test depth of corrosion is kept in the loft drier.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010565046 CN102134491B (en) | 2010-11-26 | 2010-11-26 | Gallium nitride surface corrosion liquid and corrosion method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010565046 CN102134491B (en) | 2010-11-26 | 2010-11-26 | Gallium nitride surface corrosion liquid and corrosion method |
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| Publication Number | Publication Date |
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| CN102134491A true CN102134491A (en) | 2011-07-27 |
| CN102134491B CN102134491B (en) | 2013-03-06 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN 201010565046 Active CN102134491B (en) | 2010-11-26 | 2010-11-26 | Gallium nitride surface corrosion liquid and corrosion method |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103361643A (en) * | 2013-07-22 | 2013-10-23 | 中国科学院苏州纳米技术与纳米仿生研究所 | GaN corrosive liquid |
| CN107452610A (en) * | 2016-04-29 | 2017-12-08 | 英飞凌科技股份有限公司 | Method for handling semiconductor regions |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1525577A (en) * | 2003-02-25 | 2004-09-01 | 中国科学院半导体研究所 | Method for producing N-type layer ohmic contact electrode of GaN LED |
| CN1865192A (en) * | 2005-05-16 | 2006-11-22 | 中国科学院合肥物质科学研究院 | Gallium nitride film material preparation method |
| US20070207630A1 (en) * | 2006-03-02 | 2007-09-06 | Sumitomo Electric Industries, Ltd. | Surface treatment method of compound semiconductor substrate, fabrication method of compound semiconductor, compound semiconductor substrate, and semiconductor wafer |
-
2010
- 2010-11-26 CN CN 201010565046 patent/CN102134491B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1525577A (en) * | 2003-02-25 | 2004-09-01 | 中国科学院半导体研究所 | Method for producing N-type layer ohmic contact electrode of GaN LED |
| CN1865192A (en) * | 2005-05-16 | 2006-11-22 | 中国科学院合肥物质科学研究院 | Gallium nitride film material preparation method |
| US20070207630A1 (en) * | 2006-03-02 | 2007-09-06 | Sumitomo Electric Industries, Ltd. | Surface treatment method of compound semiconductor substrate, fabrication method of compound semiconductor, compound semiconductor substrate, and semiconductor wafer |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103361643A (en) * | 2013-07-22 | 2013-10-23 | 中国科学院苏州纳米技术与纳米仿生研究所 | GaN corrosive liquid |
| CN107452610A (en) * | 2016-04-29 | 2017-12-08 | 英飞凌科技股份有限公司 | Method for handling semiconductor regions |
| CN107452610B (en) * | 2016-04-29 | 2021-01-15 | 英飞凌科技股份有限公司 | Method for processing a semiconductor region |
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| Publication number | Publication date |
|---|---|
| CN102134491B (en) | 2013-03-06 |
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