CN102134079B - Trichlorosilane manufacturing device - Google Patents
Trichlorosilane manufacturing device Download PDFInfo
- Publication number
- CN102134079B CN102134079B CN201110020020.1A CN201110020020A CN102134079B CN 102134079 B CN102134079 B CN 102134079B CN 201110020020 A CN201110020020 A CN 201110020020A CN 102134079 B CN102134079 B CN 102134079B
- Authority
- CN
- China
- Prior art keywords
- heating
- heating part
- reaction chamber
- heating element
- well heater
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Landscapes
- Silicon Compounds (AREA)
Abstract
The invention provides a trichlorosilane manufacturing device, which is capable of uniform temperature distribution in a reaction chamber and higher heat efficiency in heating supplied gas and meanwhile can be scaled up and mass produced on the premise that no heat efficiency is offset. The trichlorosilane manufacturing device comprises an approximately cylindrical reaction chamber provided with raw gas so as to generate reaction gas, a plurality of heaters equipped inside the reaction chamber for heating the raw gas and a plurality of electrodes connected on the lower end of the heaters and fixed on the bottom board of the reaction chamber, wherein, each heater comprises a pair of non-heating parts fixed on a pair of electrodes and a heating part equipped on the non-heating parts and provided with power for heating. The heating part comprises a plate-shaped first heating body extending upwards from the non-heating parts and connected between a pair of non-heating parts and a plated-shaped second heating body extending upwards from the non-heating parts and connected between a pair of non-heating parts, wherein, the first heating body is higher than the second heating body.
Description
Technical field
The present invention relates to a kind of trichlorosilane producing apparatus that silicon tetrachloride is converted to trichlorosilane.
Background technology
As the trichlorosilane (SiHCl using for the manufacture of the raw material of silicon (Si: silicon)
3) can be by making silicon tetrachloride (SiCl
4: silicon tetrachloride) and hydrogen reaction and conversion manufacture.
, silicon generates by reduction reaction and the pyrolytic reaction of the trichlorosilane based on following reaction formula (1) (2).Trichlorosilane generates by the conversion reaction based on following reaction formula (3).
SiHCl
3+H
2→Si+3HCl …(1)
4SiHCl
3→Si+3SiCl4+2H
2 …(2)
SiCl
4+H
2→SiHCl
3+HCl …(3)
As the device of manufacturing trichlorosilane, for example in patent documentation 1,2, propose to have following reaction vessel, be that reaction chamber becomes and has the mistress that formed by 2 of concentric arrangement pipes and the double chamber of Nei chamber is designed, and configure the reaction vessel of heating element in the outer periphery of this reaction chamber.In this reaction vessel, the heating element being formed by carbon etc. by heating power from outside to heating in reaction chamber, thereby make the gas reaction in reaction chamber.
In patent documentation 3, disclose, many tubular heaters are disposed in reaction chamber and the device of gas direct-fired structure in reaction chamber and in well heater.
In such a reaction chamber, expect that the temperature distribution in reaction chamber will be evenly.For example in patent documentation 4, proposing has a following well heater, and, for the effective bottom of the reaction chamber of the easy step-down of Heating temperature, poor at the ladder of formation midway of heating part, the sectional area in bottom is little, thus the well heater that resistance value is large and heating temp is high.
Patent documentation 1: No. 3781439 communique of Japanese Patent
Patent documentation 2: Japanese Patent Publication 2004-262753 communique
Patent documentation 3: the clear 60-49021 communique of Japanese patent laid-open publication gazette
Patent documentation 4: Japanese Patent Publication 2007-3129 communique
In the manufacturing installation of trichlorosilane require indoor with high thermo-efficiency reacting by heating in, unstripped gas is uniformly heated.
But, if the structure that patent documentation 1,2 is recorded has the heating element reacting by heating by being disposed at reaction chamber outside indoor, be emitted to the radiant heat of radial direction foreign side and the low problem points of thermo-efficiency but cannot effectively utilize from heating element.
With regard to the structure of recording with regard to patent documentation 3, be provided with well heater in the inside of reaction chamber and can utilize efficiently the heat of well heater.But if gas does not flow through equably and flows in the same manner in each well heater in reaction chamber, whole gas cannot heat equably, likely reaction efficiency step-down.
The well heater that patent documentation 4 is recorded, rises by the output density that makes the sectional area of bottom of well heater be less than Er Shi bottom, top.But, if want, output density is changed significantly in top and the bottom, must make the sectional area of bottom be significantly less than top, become the weight that is difficult to support top, the intensity of well heater likely has problems.
Summary of the invention
The present invention completes in view of aforementioned problems, its object is, provide a kind of can be equably and with the indoor unstripped gas of high thermo-efficiency reacting by heating time, in the situation that not losing thermo-efficiency, seek the maximization of device, and can realize mass-produced trichlorosilane producing apparatus.
The device of being manufactured trichlorosilane by the unstripped gas that comprises silicon tetrachloride and hydrogen of the present invention, possesses: the roughly reaction chamber of tubular, is supplied to described unstripped gas from below and generates the reactant gases that comprises trichlorosilane and hydrogenchloride etc.; Multiple well heaters, are arranged in described reaction chamber and heat described unstripped gas; And multiple electrodes, being connected in the lower end of these well heaters and being fixed on the base plate of described reaction chamber, each described well heater has: a pair of non-heating part, is fixed on a pair of described electrode; And heating part, being installed on these non-heating parts and being supplied to electric power and generate heat, described heating part possesses: the 1st heating element, for tabular and extend upward and connect between described a pair of non-heating part from each described non-heating part; The 2nd heating element, for tabular and height lower than the 1st heating element, extend upward and connect between described a pair of non-heating part from described non-heating part.
According to this trichlorosilane producing apparatus, by well heater is arranged in reaction chamber, the heat of well heater directly reaches the unstripped gas of circulation around it, therefore can be with high thermo-efficiency heating raw gas.And, due to well heater being set in reaction chamber, even if therefore make reaction chamber maximize, also can well heater be set at its necessary place, and can not lose thermo-efficiency.
And, according to this trichlorosilane producing apparatus, possess the 1st tabular heating element and the 2nd heating element by the heating part of well heater, in the bottom of heating part, the number of heating element becomes 2 times of top, even if therefore output density is not changed according to the sectional area of heating element, also can make the heating quantitative change in the bottom of heating part large.And, in a well heater, possess and have 2 heating elements by non-heating part, therefore in space, less reaction chamber bottom easily closely erects heating part.
In this trichlorosilane producing apparatus, described the 1st heating element and described the 2nd heating element can have different sectional area.Easily set the export ratio in top and the bottom of well heater by the each sectional area of any setting.
According to trichlorosilane producing apparatus involved in the present invention, by well heater is set in reaction chamber, the heat of well heater directly can be reached to unstripped gas, with high thermo-efficiency heating raw gas, thereby further improve the turnover ratio to trichlorosilane.And, even if reaction chamber is maximized, also can well heater be set at necessity place, in the situation that not losing thermo-efficiency, seek the maximization of device, and can realize a large amount of production.
And, by formed the heating part of well heater by 2 tabular heating elements, can increase the thermal value in well heater bottom without reducing the intensity of well heater, and the temperature of bottom that can make temperature be difficult to the reaction chamber rising rises effectively, obtain high reaction efficiency.
Accompanying drawing explanation
Fig. 1 is the longitudinal section that represents an embodiment of trichlorosilane producing apparatus involved in the present invention.
Fig. 2 is the sectional view along the A-A line in Fig. 1.
Fig. 3 is the side-view of the heating part of the well heater in the trichlorosilane producing apparatus shown in presentation graphs 1.
Fig. 4 is the side-view of the heating part of the well heater in the trichlorosilane producing apparatus representing in the past.
Fig. 5 is the longitudinal section that represents the 2nd embodiment of trichlorosilane producing apparatus involved in the present invention.
Fig. 6 is the sectional view along the B-B line in Fig. 5.
Fig. 7 is the longitudinal section of the 3rd embodiment of trichlorosilane producing apparatus involved in the present invention.
Nomenclature
10-reaction vessel, 11-wall body, the cylindric runner of 11a-, 11b-gas guiding in channel, 11c-annular runner, wall body inside 11A-, wall body outside 11B-, 12-top board, 13-base plate, 14-unstripped gas supply-pipe, 15-gas eduction tube, 20-well heater, 21-heating part, 21A-the 1st heating element, 21B-the 2nd heating element, the non-heating part of 22-, 23-electrode, 30-thermally insulated container, 40-breaker plate, 40a-disperses runner, 50-well heater, 51-heating part, the non-heating part of 52-, 53-electrode, 100-trichlorosilane producing apparatus, 101-reaction chamber.
Embodiment
Below, an embodiment of trichlorosilane producing apparatus involved in the present invention is described.
The trichlorosilane producing apparatus 100 of present embodiment is for heating and generated the reactant gases that comprises trichlorosilane and hydrogenchloride etc. and manufactured by conversion reaction the device of trichlorosilane to the unstripped gas that comprises silicon tetrachloride and hydrogen, as shown in Figure 1, possess the multiple electrodes 23 that have the reaction vessel of the unstripped gas of being supplied to 10, are disposed at the well heater 20 in this reaction vessel 10, unstripped gas being heated and are connected in the lower end of these well heaters 20 and be fixed on the base plate 13 of reaction vessel 10.Reaction vessel 10 possesses thermally insulated container 30, prevents from being emitted from reaction vessel 10 by the heat based on well heater 20 decline of the heating efficiency causing.
Reaction vessel 10 possesses the wall body 11 of tubular roughly, close the top board 12 of upper end of this wall body 11 and the base plate 13 of closing the lower end of wall body 11.
Wall body 11 possesses and has the inner side wall body 11A and the outside wall body 11B that are designed to respectively concentric roughly tubular.Between these inner side wall body 11A and outside wall body 11B, be formed with space cylindraceous (cylindric runner 11a).The bottom of outside wall body 11B is connected in base plate 13 and blocked, and on the other hand, inner side wall body 11A is configured to bottom and leaves base plate 13.Therefore, be formed with the gas guiding in channel 11b of the ring-type of opening in the bottom of inner side wall body 11A, the internal space of cylindric runner 11a and inner side wall body 11A is communicated with.
In this wall body 11, be provided with the annular runner 11c on the top that is connected in cylindric runner 11a.And, be connected with unstripped gas supply-pipe 14 on the top of this annular runner 11c.In addition, be connected with reactant gases is exported to gas eduction tube 15 outside device to run through the central authorities of top board 12 of the upper end of closing wall body 11.
The base plate 13 of reaction vessel 10 be connected in outside wall body 11B under when bringing in the lower end of closing wall body 11, multiple well heaters 20 are erected to be held in so that concentric shape is multiple and describe circle and arrange.And, the top board 12 of reaction vessel 10 be connected in the inner side wall body 11A of wall body 11 and outside wall body 11B on bring in the upper end of closing wall body 11.Surrounded and the space that erects multiple well heaters 20 is the reaction chamber 101 in this trichlorosilane producing apparatus 100 by this top board 12, wall body 11 (inner side wall body 11A) and base plate 13.
Have respectively and be fixed on a pair of non-heating part 22 of pair of electrodes 23 and be installed on these non-heating parts 22 and be supplied to electric power the roughly tabular heating part 21 that carrys out resistance heating at multiple (in present embodiment being 20) well heater 20 of the interior heating raw gas of this reaction chamber 101, as shown in Figure 2, be arranged in and describe triple concentric(al) circless.
As shown in Figure 3, in the heating part 21 of well heater 20, possess and have: the 1st heating element 21A that inverted u-shaped is tabular, extends upward and connects between these non-heating parts 22 from each non-heating part 22; And the 2nd tabular heating element 21B of inverted u-shaped, highly lower than the 1st heating element 21A, and extend upward and connect between a pair of non-heating part 22 from non-heating part 22., the number of the heating element in the bottom of heating part 21 is more than the number of the heating element in top.Therefore, in each well heater 20, the thermal value in the dual bottom that is provided with the 1st heating element 21A and the 2nd heating element 21B is larger, is only provided with thermal value in the top of the 1st heating element 21A less compared with this bottom.
Each electrode 23 supports a pair of non-heating part 22, and the well heater 20 of electrical connection adjacency each other.Therefore, multiple (for example 4) well heater 20 is connected in series.The well heater 20 being connected in series by these for example, is connected in parallel and is supplied to electric power by multiple row (5 groups), can make each heating part 21 resistance heatings and the unstripped gas in reaction chamber 101 is heated.In addition, the 1st heating element 21A and the 2nd heating element 21B are the resistance being connected in parallel by non-heating part 22.
At the height location of the base end part (being the upper end of non-heating part 22) of heating part 21, be provided with to approximate horizontal the breaker plate 40 that is disposed at gas guiding in channel 11b top.Breaker plate 40 has the gas stream through hole 40a of the shape of the allocation position of the each well heater 20 in interior corresponding to reaction chamber 101.Reaction chamber 101 separates the bottom of the low temperature of accommodating non-heating part 22 and being imported into unstripped gas by the breaker plate 40 of configuration like this and accommodates the top of the high temperature of heating part 21 and heating raw gas.
In trichlorosilane producing apparatus configured as described above 100, be supplied to the unstripped gas of reaction vessel 10 from unstripped gas supply-pipe 14, after riddling annular runner 11c, be directed into cylindric runner 11a, by gas guiding in channel, 11b is directed into the bottom in reaction chamber 101.
The unstripped gas that is directed into reaction chamber 101 is for example 400 ℃～700 ℃, because circulating resistance riddles the below of breaker plate 40, by disperseing runner 40a to disperse to be supplied to the top of breaker plate 40, be uniformly heated by the heating part 21 of well heater 20.
At this moment, heating part 21 is by possess the 2nd heating element 21B in bottom, without the output that excessively improves heating part 21 entirety, can the heating initial stage heat strongly with low temperature supplying relatively to unstripped gas.The unstripped gas heating in the bottom of reaction chamber 101, in the interior rising of reaction chamber 101, is further heated by the 1st heating element 21A on the top of reaction chamber 101.
The reactant gases generating according to the conversion reaction of the unstripped gas being heated by heating part 21, for example, be 800 ℃～1100 ℃, is removed from this trichlorosilane producing apparatus 100 by gas eduction tube 15.
As described above, according to this trichlorosilane producing apparatus 100, by well heater 20 is arranged in reaction chamber 101, the heat of well heater 20 directly reaches the unstripped gas of circulation around it, therefore can be with high thermo-efficiency heating raw gas.And, owing to well heater 20 being set reaction chamber 101 is interior, even if therefore make reaction vessel 10 maximize, also can well heater 20 be set at its necessary place, and can not lose thermo-efficiency.
Owing to having the unstripped gas than lower temperature at the underfeed of reaction chamber 101, therefore in the bottom of heating part 21, the temperature of heating element easily declines, and the temperature of heating element is difficult to decline in the top of reaction of carrying out unstripped gas.Therefore, in well heater in the past 50 as shown in Figure 4, make the temperature of heating element bottom fully increase if want, the excessive temperature on heating element top rises and exceed can use temperature.But this well heater 20 also possesses and has the 2nd heating element 21B except the 1st heating element 21A in the bottom of heating part 21, therefore the thermal value in bottom is high, and can make the temperature of unstripped gas increase rapidly at the heating initial stage.And, only possess and have the 1st heating element 21A on the top of heating part 21, be therefore heated to preset temperature in the top of reaction chamber 101 unstripped gas by the 1st heating element 21A.That is, according to this trichlorosilane producing apparatus 100, the output of heating element that can not make heating part 21 is excessive and fully obtain the output in bottom, thus heating raw gas effectively.
In addition, when making 2 heating elements of 1 non-heating part 22 (electrode 23) supporting, it is tabular that these heating elements are arranged to dual inverted u-shaped, therefore realized space efficiency excellence and configuration and be easy to well heater 20.
In addition, the invention is not restricted to the formation of described embodiment, in thin portion forms, can append without departing from the spirit and scope of the present invention various changes.For example the 1st heating element 21A and the 2nd heating element 21B can have identical sectional area, but also can have different sectional area.When these heating elements are made as to different cross-sectional, cross section can be made as to rectangle and make any one party or both sides' difference in width or thickness, can also make the shape difference in cross section.By the 1st heating element and the 2nd heating element are set as to different sectional area, can easily set the ratio of the well heater output in the upper and lower of heating part 21.
In addition, also whole installation in reaction chamber not of the well heater of heating raw gas.The related trichlorosilane producing apparatus 110 of the 2nd embodiment of the present invention shown in Fig. 5 and Fig. 6.In this trichlorosilane producing apparatus 110, be set as at the easy central part of the reaction chamber 101 of heating raw gas and well heater 20 be not set and disperse the structure of runner 40a, therefore make the uniformity of temperature profile in reaction chamber 101.In addition, in Fig. 5 and Fig. 6, to the part common with aforesaid embodiment, additional prosign and description thereof is omitted.
In addition, also can be different at each well heater 20 for the height of the 2nd heating element of the indoor bottom of reacting by heating effectively.The related trichlorosilane producing apparatus 120 of the 3rd embodiment of the present invention shown in Fig. 7.In this trichlorosilane producing apparatus 120, with the bottom Raw gas at reaction chamber 101 to concentrate on mode bias current of central part etc., the inadequate situation correspondence of dispersion of the unstripped gas based on breaker plate 40, coordinates the flow state of unstripped gas to make the height of the 2nd heating element 20B by each well heater 20 differences.,, by coordinating the bias current of unstripped gas, make the different and unstripped gas in reacting by heating chamber 101 equably of heating intensity in the each region in reaction chamber 101.In addition, in the present embodiment, make the height of the 1st heating element 21A identical in each well heater 20, but also can make the height of the 1st heating element 21A by different in each well heater 20.In addition, in Fig. 7, to the part common with aforesaid embodiment, additional prosign and description thereof is omitted.
(embodiment and comparative example)
At this, the related embodiment of trichlorosilane producing apparatus of the present invention and comparative example are described.As embodiment, as shown in Figure 3, use the well heater 20 that possesses the 1st heating element 21A and the 2nd heating element 21B.In addition, as a comparative example, as shown in Figure 4, use well heater 50 in the past, possessed the structure of extending upward and connect these non-heating parts 52 single heating part 51 each other from 2 non-heating parts 52 that supported by electrode 53.And, about the well heater of these each embodiment and comparative example, to the output in each position of heating part and ratio, compare with output and ratio in the upper and lower of heating part.
(embodiment 1)
First, about the well heater 20 shown in Fig. 3, by the table 1 that the results are shown in of the output in each position 21a～21f of calculating heating part 21 and ratio.Size in each portion of heating part 21 of the well heater 20 utilizing in embodiment 1 as below.
Thickness: 36mm
The width W 1:13mm of the 1st heating element
Height H 1:1400mm from non-heating part 22 to the upper end of the 1st heating element
The width W 2:13mm of the 2nd heating element
Height H 2:350mm from non-heating part 22 to the upper end of the 2nd heating element
[table 1]
| Position | Output (kW) | Ratio (%) |
| 21a | 8 | 10 |
| 21b | 1 | 1 |
| 21c | 8 | 10 |
| 21d | 26 | 33 |
| 21e | 10 | 13 |
| 21f | 26 | 33 |
In the heating part 21 of the well heater 20 of this embodiment 1, the output in bottom and top distribute become as below, can confirm that the output in the bottom of heating part 21 is high.
Bottom (scope of height 0～350mm): output 70kW, ratio 89%
Top (scope of height 350～1400mm): output 9kW, ratio 11%
(embodiment 2)
Secondly, about the well heater 20 shown in Fig. 3, by the table 2 that the results are shown in of the output in each position 21a～21f of calculating heating part 21 and ratio.Size in each portion of heating part 21 of the well heater 20 utilizing in embodiment 2 as below.
Thickness: 36mm
The width W 1:20mm of the 1st heating element
Height H 1:1400mm from non-heating part 22 to the upper end of the 1st heating element
The width W 2:20mm of the 2nd heating element
Height H 2:700mm from non-heating part 22 to the upper end of the 2nd heating element
[table 2]
| Position | Output (kW) | Ratio (%) |
| 21a | 13 | 17 |
| 21b | 1 | 1 |
| 21c | 13 | 17 |
| 21d | 24 | 30 |
| 21e | 4 | 5 |
| 21f | 24 | 30 |
In the heating part 21 of the well heater 20 of this embodiment 2, the output in bottom and top distribute become as below, can confirm that the output in the bottom of heating part 21 is high.
Bottom (scope of height 0～700mm): output 65kW, ratio 82%
Top (scope of height 700～1400mm): output 14kW, ratio 18%
(embodiment 3)
Secondly, about the well heater 20 shown in Fig. 3, by the table 3 that the results are shown in of the output in each position 21a～21f of calculating heating part 21 and ratio.Size in each portion of heating part 21 of the well heater 20 utilizing in embodiment 3 as below.
Thickness: 36mm
The width W 1:30mm of the 1st heating element
Height H 1:1400mm from non-heating part 22 to the upper end of the 1st heating element
The width W 2:15mm of the 2nd heating element
Height H 2:700mm from non-heating part 22 to the upper end of the 2nd heating element
[table 3]
| Position | Output (kW) | Ratio (%) |
| 21a | 19 | 24 |
| 21b | 2 | 3 |
| 21c | 19 | 24 |
| 21d | 17 | 22.5 |
| 21e | 3 | 4 |
| 21f | 17 | 22.5 |
In the heating part 21 of the well heater 20 of this embodiment 3, the output in bottom and top distribute become as below, can confirm that the output in the bottom of heating part 21 is high.
Bottom (scope of height 0～700mm): output 56kW, ratio 73%
Top (scope of height 700～1400mm): output 21kW, ratio 27%
(comparative example)
Secondly, about the well heater 50 shown in Fig. 4, by the table 4 that the results are shown in of the output in each position 51a, 51b, the 51c of calculating heating part 51 and ratio.Size in each portion of the heating part 51 of the well heater 50 utilizing in comparative example as below.
Thickness: 36mm
The width W 3:60mm of heating element
Height H 3:1400mm from non-heating part 52 to the upper end of heating part
[table 4]
| Position | Output (kW) | Ratio (%) |
| 51a | 36 | 48 |
| 51b | 3 | 4 |
| 51c | 36 | 48 |
In the heating part 51 of the well heater 50 of this comparative example, the output in bottom and top distribute become as below, can confirm that the output in the bottom of heating part 51 is low.
(1) in the time that each scope of 0～350mm and 350～1400mm compares,
Bottom (height 0～350mm scope): output 18kW, ratio 24%,
Top (scope of height 350～1400mm): output 57kW, ratio 76%.
(2) in the time that each scope of 0～700mm and 700～1400mm compares,
Bottom (height 0～700mm scope): output 36kW, ratio 48%,
Top (scope of height 700～1400mm): output 39kW, ratio 52%.
From confirming above, the output ratio in the bottom of heating element in embodiment is high, and can the maximum output of each portion is suppressed to less.That is, can confirm, in the well heater 20 of each embodiment, when can suppressing the load of heating element, heat strongly in bottom, contrary in the well heater 50 of comparative example, even if the load of heating element is large, a little less than the heating also in bottom.
Claims (2)
1. a device of being manufactured trichlorosilane by the unstripped gas that comprises silicon tetrachloride and hydrogen, is characterized in that possessing:
The roughly reaction chamber of tubular, is supplied to described unstripped gas from below and generates the reactant gases that comprises trichlorosilane and hydrogenchloride etc.; Multiple well heaters, are arranged in described reaction chamber and heat described unstripped gas; And multiple electrodes, be connected in the lower end of these well heaters and be fixed on the base plate of described reaction chamber,
Each described well heater has: a pair of non-heating part, is fixed on a pair of described electrode; And heating part, be installed on these non-heating parts and be supplied to electric power and generate heat,
Described heating part possesses: the 1st heating element, for tabular and extend upward and connect between described a pair of non-heating part from each described non-heating part; The 2nd heating element, for tabular and height lower than the 1st heating element, extend upward and connect between described a pair of non-heating part from each described non-heating part.
2. trichlorosilane producing apparatus as claimed in claim 1, is characterized in that,
Described the 1st heating element and described the 2nd heating element have different sectional area.
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010016070 | 2010-01-27 | ||
| JP2010-016070 | 2010-01-27 | ||
| JP2011001837A JP5633375B2 (en) | 2010-01-27 | 2011-01-07 | Trichlorosilane production equipment |
| JP2011-001837 | 2011-01-28 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102134079A CN102134079A (en) | 2011-07-27 |
| CN102134079B true CN102134079B (en) | 2014-07-09 |
Family
ID=44294036
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201110020020.1A Active CN102134079B (en) | 2010-01-27 | 2011-01-13 | Trichlorosilane manufacturing device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102134079B (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1153138A (en) * | 1995-09-21 | 1997-07-02 | 瓦克化学有限公司 | Process for preparing trichlorosilane |
| CN101417804A (en) * | 2007-10-23 | 2009-04-29 | 三菱麻铁里亚尔株式会社 | Apparatus for producing trichlorosilane and method for producing thrichlorosilane |
| CN101421188A (en) * | 2006-10-31 | 2009-04-29 | 三菱麻铁里亚尔株式会社 | Trichlorosilane production apparatus |
| CN101489931A (en) * | 2006-10-31 | 2009-07-22 | 三菱麻铁里亚尔株式会社 | Trichlorosilane production apparatus |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6049021A (en) * | 1983-08-29 | 1985-03-18 | テキサコ・デベロツプメント・コ−ポレ−シヨン | Manufacture of polyol-catalyst mixture useful for manufacture of hard polyurethane foam product |
-
2011
- 2011-01-13 CN CN201110020020.1A patent/CN102134079B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1153138A (en) * | 1995-09-21 | 1997-07-02 | 瓦克化学有限公司 | Process for preparing trichlorosilane |
| CN101421188A (en) * | 2006-10-31 | 2009-04-29 | 三菱麻铁里亚尔株式会社 | Trichlorosilane production apparatus |
| CN101489931A (en) * | 2006-10-31 | 2009-07-22 | 三菱麻铁里亚尔株式会社 | Trichlorosilane production apparatus |
| CN101417804A (en) * | 2007-10-23 | 2009-04-29 | 三菱麻铁里亚尔株式会社 | Apparatus for producing trichlorosilane and method for producing thrichlorosilane |
Non-Patent Citations (1)
| Title |
|---|
| JP昭60-49021A 1985.03.18 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102134079A (en) | 2011-07-27 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR100892123B1 (en) | Poly silicon deposition device | |
| KR102023023B1 (en) | Feed preheating part integrated steam reformer | |
| US20090155138A1 (en) | Apparatus for Producing Trichlorosilane | |
| CN103328380B (en) | Poly plant and the manufacture method of polysilicon | |
| JP5444839B2 (en) | Trichlorosilane production apparatus and production method | |
| KR20140040229A (en) | Apparatus and methods for conversion of silicon tetrachloride to trichlorosilane | |
| CN102134079B (en) | Trichlorosilane manufacturing device | |
| CN101919028B (en) | Polysilicon deposition apparatus | |
| CN102161489B (en) | Apparatus for producing trichlorosilane and method for producing trichlorosilane | |
| CN104736480B (en) | The supply method of polysilicon production of raw material for use gas and polysilicon | |
| CN102190303B (en) | Apparatus for producing trichlorosilane and method for producing trichlorosilane | |
| CN202350534U (en) | Heating element and testing smelting furnace adopting same | |
| CN202246090U (en) | Uniform heat extraction polycrystalline silicon reduction furnace base plate cooling structure | |
| CN102259862A (en) | Novel polysilicon reduction furnace with 42 rods and connection mode | |
| JP5633375B2 (en) | Trichlorosilane production equipment | |
| JP5130882B2 (en) | Polycrystalline silicon manufacturing method and manufacturing apparatus | |
| CN102351193B (en) | Uniform heat-removing polysilicon reducing furnace chassis cooling structure | |
| CN102190304B (en) | Apparatus for producing trichlorosilane | |
| KR101039659B1 (en) | Poly silicon deposition device | |
| JP2011219315A (en) | Trichlorosilane production apparatus | |
| JP2011026156A (en) | Apparatus for producing trichlorosilane | |
| CN114728262A (en) | Reforming furnace |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |