CN102132390B - 接合结构体、接合材料及接合材料的制造方法 - Google Patents

接合结构体、接合材料及接合材料的制造方法 Download PDF

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Publication number
CN102132390B
CN102132390B CN2010800024434A CN201080002443A CN102132390B CN 102132390 B CN102132390 B CN 102132390B CN 2010800024434 A CN2010800024434 A CN 2010800024434A CN 201080002443 A CN201080002443 A CN 201080002443A CN 102132390 B CN102132390 B CN 102132390B
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grafting material
semiconductor element
carbon
electrode
weight
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CN102132390A (zh
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古泽彰男
酒谷茂昭
北浦秀敏
中村太一
松尾隆广
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Panasonic Holdings Corp
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Matsushita Electric Industrial Co Ltd
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    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C12/00—Alloys based on antimony or bismuth
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    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • B23K1/0008—Soldering, e.g. brazing, or unsoldering specially adapted for particular articles or work
    • B23K1/0016—Brazing of electronic components
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    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • B23K1/20—Preliminary treatment of work or areas to be soldered, e.g. in respect of a galvanic coating
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    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24—Selection of soldering or welding materials proper
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    • B23K35/264—Bi as the principal constituent
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    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/36—Selection of non-metallic compositions, e.g. coatings, fluxes; Selection of soldering or welding materials, conjoint with selection of non-metallic compositions, both selections being of interest
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Abstract

本发明是例如具有接合结构体的半导体零部件(100)，该接合结构体具备半导体元件(102)、与半导体元件(102)对置的电极(103)、连接半导体元件(102)与电极(103)的以Bi为主成分的接合材料，通过接合材料(104)含有碳化合物，与现在相比可以降低接合部被半导体元件和电极的线膨胀系数之差破坏的程度。可以提供由以Bi为主成分的接合材料将半导体元件和电极接合的接合结构体等，该接合结构体与现有产品相比可以提高接合部的可靠性。

Description

接合结构体、接合材料及接合材料的制造方法
技术领域
本发明涉及含有不含铅的接合材料的接合结构体，更具体涉及将Si、GaN、SiC等半导体元件和电极接合而成的半导体零部件的接合结构体、接合材料及接合材料的制造方法。 
背景技术
半导体零部件使用焊接材料安装于基板。例如，将IGBT(Insulated GateBipolar Transistor绝缘栅双极晶体管)这类半导体零部件和基板接合的焊接材料一般使用熔点为220℃的Sn-3重量％Ag-0.5重量％Cu。 
图7为半导体零部件被安装于基板的模式图。将半导体零部件1安装于基板2时，通过浸渍焊接方式的浸渍装置，使用例如作为熔点为220℃的焊接材料3的Sn-3重量％Ag-0.5重量％Cu，将半导体零部件1的外部电极4焊接于基板电极5。这时焊接材料3由于被浸渍装置加热至250～260℃，因此有时半导体零部件1的内部温度达到250～260℃。虽然在半导体零部件1的内部半导体元件6和电极7被接合材料8接合，但在半导体零部件1的内部如果接合材料8出现熔融，则可能会发生短路、断线或电特性变化而导致最终产品出现不良问题。因此，半导体零部件1的内部所用的接合材料8被要求具有高于用浸渍装置进行焊接时所达到的半导体零部件1内部的最高温度的熔融温度。 
为此，含有90重量％以上的Bi的接合材料(以下称为以Bi为主成分的接合材料)(例如Bi-2.5重量％Ag熔点262℃，Bi-0.8重量％Cu熔点270℃)被认为适合作为熔融温度超过260℃、不含铅的接合材料。作为其他的接合材料也研究了Zn，但如果考虑到浸润性或易接合性等，则目前上述以Bi为主成分的接合材料是最适合的。因此，提出过使用以Bi为主成分的接合材料的功率半导体模块(参见专利文献1)。图8是专利文献1所记载的现 有的接合结构体(功率半导体模块)的剖面图。 
图8的功率半导体模块9中，Cu层13和电极11通过接合部12接合，该Cu层13是为了与接合材料接合而形成于功率半导体元件10的接合部12侧的表面的。该接合部12使用以Bi为主成分的接合材料。 
专利文献1：日本专利特开2007-281412号公报(例如，第24页、图2) 
发明的揭示 
但是，接合部12的主成分Bi比Pb硬，因此，由于功率半导体元件10工作时的发热，功率半导体元件10和电极11的线膨胀系数之差所引发的应力施加于接合部12时，接合部12无法完全承受应变而被破坏，发生裂缝问题。为此，存在产品的质量不稳定、接合可靠性低的课题。 
还有，现有的功率半导体模块9的故障循环数的测定结果为310cyc，其测定条件如下。即，根据对使用以Bi为主成分的接合材料(Bi-0.8重量％Cu)的功率半导体模块9实施低温侧为-65℃、高温侧为150℃的温度循环试验时的工作试验，以N数(样本数)＝15算出故障率达到0.15％的故障循环数。 
本发明是解决上述现有课题的发明，目的是提供与现在相比，接合部的可靠性，例如故障循环数能够实现改善的接合结构体、接合材料及接合材料的制造方法。 
为了实现上述目的，本发明1为接合结构体，其中，包括半导体元件、与所述半导体元件对置的电极、连接所述半导体元件和所述电极的以Bi为主成分的接合材料，所述以Bi为主成分的接合材料含有碳化合物。 
本发明2如上述本发明1的接合结构体，其中，所述碳化合物为具有配体的金属配合物包含的碳化合物。 
本发明3如上述本发明2的接合结构体，其中，所述配体具有选自羧基、醛基、硫醇基、羟基、膦基、氨基及甲基的至少1种以上的官能团。 
本发明4如上述本发明2的接合结构体，其中，构成所述金属配合物的金属为Bi。 
本发明5如上述本发明1的接合结构体，其中，所述接合材料含有选自0.1～1重量％的Cu与0.1～9重量％的Ag的1种以上的元素、Bi含量为90重量％以上的金属材料和0.02～0.25重量％的碳。 
本发明6为接合材料，它是将半导体元件和与所述半导体元件对置的电极接合的以Bi为主成分的接合材料，所述接合材料含有碳化合物。 
本发明7如上述本发明6的接合材料，其中，所述碳化合物为具有配体的金属配合物包含的碳化合物。 
本发明8如上述本发明7的接合材料，其中，含有所述碳化合物的所述金属配合物的所述配体具有选自羧基、醛基、硫醇基、羟基、膦基、氨基及甲基的至少1种以上的官能团。 
本发明9为接合材料的制造方法，它是将半导体元件和与所述半导体元件对置的电极接合的以Bi为主成分的接合材料的制造方法，包括在所述电极的表面形成Cu层的Cu层形成工序；对形成有所述Cu层的电极形成包含碳化合物的、具有配体的Bi配合物的层的Bi配合物层形成工序；将形成有所述Bi配合物层的电极加热至所述Bi的熔点以上的加热工序。 
本发明10如上述本发明9的接合材料的制造方法，其中，所述配体具有选自羧基、醛基、硫醇基、羟基、膦基、氨基及甲基的至少1种以上的官能团。 
本构成中，通过以Bi为主成分的接合材料含有碳化合物，能够使半导体元件和电极的接合部的可靠性比现在得到提高。 
如上所述，利用本发明能够实现半导体元件和电极的接合部的可靠性、例如故障循环数的改善。 
附图的简单说明 
图1(a)为本发明的实施方式1的接合结构体的剖面图，(b)为图1(a)的虚线所围的区域A的放大模式图。 
图2为本发明的实施方式1的接合材料的结构的示意图。 
图3为现有的接合材料受到来源于半导体元件和电极的线膨胀系数之差的应力时的状态的示意图。 
图4为分散有碳的接合材料受到来源于半导体元件和电极的线膨胀系 数之差的应力时的状态的示意图。 
图5为碳量和半导体元件的故障循环数的关系图。 
图6为Al量和半导体元件的故障循环数的关系图。 
图7为半导体元件被安装于基板后的模式图。 
图8为现有的接合结构体(功率半导体模块)的剖面图。 
实施发明的最佳方式 
下面，参照附图对本发明的实施方式进行说明。 
(实施方式1) 
图1为本发明的实施方式1的接合结构体的剖面图。 
图1(a)为半导体零部件被安装于基板后的模式图，将被虚线包围的区域A放大的图相当于图1(b)。 
图1(a)中，半导体零部件100被安装于基板101，半导体零部件100内部用将包含半导体元件102和电极103的区域A放大的图1(b)进行说明。 
图1(b)中，半导体元件102通过接合材料104被接合于电极103，该接合材料104中在Bi-0.8重量％Cu(熔点270℃)的内部分散着作为碳化合物的构成元素的碳105。虽然未图示，但在半导体元件102的与电极103对向的表面具有为了与接合材料104接合而形成的Cu层。 
图2为接合材料104的结构示意图，为表示分散有碳105的接合材料104的模型图。作为接合材料104的主成分的Bi106的晶体结构为菱形晶，由于原子半径70pm的碳105小于原子半径160pm的Bi106，因此碳105以侵入到Bi106的晶格的间隙的形式分散于接合材料104的内部。 
这里，分散有碳105的接合材料104的定义是具有碳105侵入到Bi106的晶格的间隙的形式的接合材料104。 
图3为现有的接合材料受到来源于半导体元件和电极的线膨胀系数之差的应力时的状态的示意图。由于受到应力107，Bi的晶格产生应变，应变量如果超过恢复极限则晶格被破坏，无法恢复到原来的状态。 
此外，在图3中，用虚线表示的部位表示晶格被破坏。 
图4为采用本实施方式的构成时的例子，为分散有碳的接合材料受到 来源于半导体元件和电极的线膨胀系数之差的应力时的状态的示意图。 
本申请的发明者对于本实施方式的分散有碳的接合材料的Bi106的晶格难以被破坏的理由推测如下。 
即，邻接的Bi和Bi通过金属键牢固地接合，但由于碳无法与Bi通过金属键接合，因此以比Bi易移动的状态存在于Bi的晶格的间隙。藉此，如果受到应力107，则在Bi106的晶格发生应变前，碳105在Bi106的晶格间隙移动，吸收应力的部分能量。依靠该作用防止Bi106的晶格发生大的破坏。 
此外，本实施方式的分散有碳的接合材料受到应力时，并不是Bi106的晶格完全没有被破坏，有一部分被破坏。但是，使用分散有碳的接合材料时，被破坏的晶格的比例比现有的接合材料小，因此接合材料整体的接合的可靠性提高。 
分散于Bi的晶格的间隙的原子只要是熔点超过Bi的熔点271℃、原子半径小于Bi的160pm且不与Bi反应的元素即可，不限于碳，可以选择Be(熔融温度1278℃/原子半径112pm)、B(2079℃/85pm)、Mg(650℃/150pm)、Al(660℃/125pm)、Si(1414℃/110pm)。 
B的原子半径在上述5种元素之中最小，因此易分散于Bi的晶格的间隙，分散的难易度按由易到难的顺序为Si、Be、Al、Mg。 
还有，如果原子半径变大则不易在Bi晶格的内部移动，因此存在应力能量的吸收效果下降的倾向，接合可靠性也存在同样下降的倾向。 
此外，Mg的熔点在上述5种元素之中最低，因此可以在低温下使Mg分散于Bi的晶格的间隙。 
这些元素可以同时使用多个元素。同时使用时，可以使用碳+B、Be+Al、Mg+Si、碳+Al+Si等任意的组合。但是，如果这些元素比碳的原子半径70pm大，比Bi的原子半径160pm的50％大，则难以进入Bi的晶格的间隙，因此最佳的元素为碳。 
半导体元件102由Si构成，从直径6英寸且厚度为0.3mm的硅片以4.5mm×3.55mm的大小切取而得。半导体元件102不限于Si，也可以由Ge构成，还可以由化合物半导体GaN、GaAs、InP、ZnS、ZnSe、SiC、SiGe等构成。此外，半导体元件102的大小可以按照半导体元件的功能使用大至6mm×5mm、或小至3mm×2.5mm、2mm×1.6mm等的半导体元件。半导体元件102的厚度有时随半导体元件的大小而异，不限于0.3mm，可以使用0.4mm、0.2mm、0.15mm等厚度。 
电极103由Cu合金构成，为了确保与接合材料的浸润性，在电极103的接合材料侧通过电镀法以1μm的厚度将Ag成膜作为表面处理层(未图示)。表面处理层可以使用与接合材料的浸润性良好的金属Au、Ni、Pd，考虑到1μm的成膜厚度不均，厚度也可以在1μm以上，成膜方法也不限于电镀法，也可以使用蒸镀法、非电镀法等。 
在一般的焊接中，为了得到良好的焊接状态，按照除去接合材料及电极表面的氧化物使其清洁的目的，使用含Br或Cl等卤化物的焊剂。焊剂既可以混合于接合材料使用，也可以在供给接合材料的前后的其他工序中供给，起到在焊接的加热时显现还原力除去氧化物的作用。但是，由于焊接后在接合部残留卤化物的残渣，因此有时受到水分的侵入和电位差的影响发生迁移不良。实施方式1的功率半导体零部件用于电源回路，被要求高可靠性，因此焊接时不使用焊剂。 
具有本实施方式1的接合结构体的功率半导体零部件的生产工序以下所示。 
准备本实施方式的表面形成有厚度20μm的分散有碳的接合材料的硅半导体元件。接着，将在电极103(芯片焊盘部)实施了0.5μm厚的镀Ag的Cu材的引线框在含5％的氢的氮气氛中加热至320℃。利用该氢的还原力除去氧化物，由于该氢是气体，因此焊接后不会残留在接合部。在被加热了的芯片焊盘部搭载形成有本实施方式的分散了碳的接合材料的硅半导体元件。以Bi的熔点270℃熔融的接合材料接合半导体元件和电极103(芯片焊盘部)后停止加热，在冷却工序中冷却至低于270℃，藉此被固定。 
以下，对碳105的含量进行说明。 
图5为接合材料所含的碳量和故障循环数的关系图。这里，改变Bi-0.8重量％Cu所含的碳量。碳量表示相对于Bi-0.8重量％Cu的重量为100时的碳量。 
碳量可以通过SIMS(二次离子微探针质谱仪Secondary Ion-microprobeMass Spectrometer)定量。SIMS是用于固体表面的微小区域的元素分析的分析法，能够以高灵敏度检测出含氢的全部元素，因此能够以ppm单位测定碳等原子量小的元素的量。 
碳无法与Bi通过金属键结合，因此即使将以Bi为主成分的接合材料加热熔融，在其中混合碳单体，也还是分离到含Bi的熔融金属的表面。即，仅单纯地混合碳无法达到使碳分散至Bi的晶格之间的目的。 
因此，为了达到上述目的，使以Bi为主成分的接合材料含有含碳的金属配合物。 
因此，该碳的特征是，包含于具有配体的金属配合物，该配体具有选自羧基、醛基、硫醇基、羟基、膦基、氨基及甲基的至少1种以上的官能团。配体具有带有孤立电子对的基团，该基团与Bi或Cu等金属配位结合形成配合物。配位力随配体的种类而不同，按羧基、醛基、硫醇基、羟基、膦基、氨基、甲基的顺序，配位力由强至弱。构成配合物的金属(这里，Bi或Cu等金属)和官能团的结合力必须要确保能够使碳充分地分散于作为主成分的Bi的晶格之间。因此，本实施方式中更好是使用配位力强的羧基或醛基。 
在图5中，横轴是接合材料所含的碳量。具体是，将以官能团具有羧基的乙二胺四乙酸盐为配体的铋配合物加入到接合材料中。碳量通过使对接合材料的铋配合物的量变化来调整到规定的量。接合材料所含的碳量通过SIMS对接合材料的断面进行表面分析，算出了其比例。 
此外，配体不限于乙二胺四乙酸盐，可以是形成铋配合物的二亚乙基三胺五乙酸盐、氨三乙酸盐，官能团不限于羧基，可以是醛基、硫醇基、羟基、膦基、氨基、甲基。此外，可以同时使用多个配体。纵轴是可靠性试验的故障循环数，根据对由通过本实施方式1接合的接合结构体组装而成的IGBT实施低温侧为-65℃、高温侧为150℃的温度循环试验时的工作试验，以N数(样本数)＝15算出故障率达到0.15％的故障循环数。 
碳的含量如果过少，则无法防止接合部因热应力而破断，因此接合部被破坏，不理想。此外，碳的含量如果过多，则损害与Bi的半导体元件及电 极的接合，无法获得良好的接合状态，因此不理想。 
这里，以产品的品质基准为基础，以故障循环数的设定值为500cyc来判断。该品质基准的故障循环数的设定值或许随产品的种类而变化，但一般如果为500cyc以上，则可以判定认为是品质良好。 
从图5的结果可知，如果碳量为0.05～0.15重量％则故障循环数为700cyc以上，能够充分地获得热应力缓和的效果。此外，碳量为0.02重量％时故障循环数低至570cyc，但与上述故障循环数的设定值500cyc相比，可以说获得了效果。另一方面，碳量如果为0.3重量％，则故障循环数变为180cyc，不理想。这是因为能够以侵入到Bi的晶格的间隙的形式分散于接合材料的内部的碳量存在极限，超过极限量的碳出现在接合材料的表面，阻碍接合材料与半导体元件及电极接合。此外，碳量为0.25重量％时，故障循环数低至500cyc，但由于这里的故障循环数的设定值为500cyc，因此可以说获得了热应力缓和的效果。 
根据以上所述，碳量如果为0.02重量％～0.25重量％的范围，则可以说获得了热应力缓和的效果。 
此外，可以用Al代替碳，但Al的原子半径为125pm，比碳的原子半径70pm大约178％，因此，Al难以进入Bi的晶格的间隙，为了得到与碳同程度的防破断效果(同程度的故障循环数)，必须增加在接合材料中的含量。 
图6为接合材料所含的Al量与故障循环数的关系图。这里，使Bi-0.8重量％Cu所含的Al量变化。 
在图6中，横轴为接合材料所含的Al量，是在加热至950℃的Bi-0.8重量％Cu中加入Al后冷却而得的接合材料。纵轴是可靠性试验的故障循环数，根据利用由通过本实施方式1接合的接合结构体组装而成的IGBT实施低温侧为-65℃、高温侧为150℃的温度循环试验时的工作试验，以N数15算出故障率达到0.15％时的循环数。 
Al的含量如果过少，则无法防止接合部因热应力而破断，因此接合部被破坏，不理想。此外，Al的含量如果过多，则阻碍Bi与半导体元件及电极的接合，无法获得良好的接合状态，因此不理想。 
从图6的结果可知，如果Al量为0.1～0.15重量％则故障循环数为 700cyc以上，能够充分地获得热应力缓和的效果。碳的含量为0.05重量％时获得700cyc以上的故障循环数，但由于Al难以进入到Bi的晶格的间隙，因此如果为0.05重量％的含量则无法获得700cyc以上的故障循环数。但是，0.05重量％时的故障循环数为600cyc，与上述的故障循环数的设定值500cyc比较，可以说能够获得效果。此外，0.02重量％时低至500cyc，但该情况下，也确保上述的故障循环数的设定值500cyc，因此可以说能够获得效果。 
另一方面，Al量如果为0.3重量％，则故障循环数变为310cyc，不理想。这是因为能够以侵入到Bi的晶格的间隙的形式分散于接合材料的内部的Al量存在极限，超过极限量的Al出现在接合材料的表面，阻碍接合材料与半导体元件及电极接合。此外，Al量为0.2～0.25重量％时，故障循环数低至645～520cyc，但由于与碳的情况同样，这里的故障循环数的设定值为500cyc，因此可以说能够获得热应力缓和的效果。 
根据以上所述，Al量如果为0.02重量％～0.25重量％的范围，则可以说获得了热应力缓和的效果。 
此外，作为可用于本实施方式的其他的金属配合物的一例，可以例举以官能团具备羧基的三(2、4-乙酰丙酮)(トリス(2，4-ペンタンジオナト))为配体的铝配合物。这里的特征是，配体具有选自羧基、醛基、硫醇基、羟基、膦基、氨基及甲基的至少1种以上的官能团。 
接着，对接合材料104进行说明。 
首先，对以厚度10μm制造Bi-0.8重量％Cu的接合材料104的层的方法进行说明。 
在对置半导体元件102一侧的电极103的表面利用蒸镀法形成厚0.1μm的Cu层。其后，通过电镀以9.9μm的厚度形成以官能团具有羧基的乙二胺四乙酸盐为配体的铋配合物，将其在含5％氢的氮气氛中加热至铋熔点以上的320℃，铋熔融，通过蒸镀形成的Cu扩散至铋的内部，形成Bi-0.8重量％Cu合金，呈在其内部碳以配合物的形态分散的状态。 
接合材料104使用含有0.8重量％的Cu且含有90重量％以上的作为除了不可避免的杂质以外的余部的Bi的材料。此外，接合材料104的组成不 限于Bi-Cu，可以使用Bi-Ag、Au-Sn、Au-Si、Au-Ge、Zn-Al等，但用于将半导体元件接合于电极的一般的芯片焊接(die bonder)装置的加热温度上限为350～400℃，而接合材料被要求在约350℃以下熔融。 
Bi的熔融温度为271℃，如果在Bi中加入Cu，则0.5重量％时共晶温度达到270℃，如果再加入Cu，则1重量％时达到351℃(参见表1中的示例，组成3)，几乎达到加热温度上限。 
此外，如果在Bi中加入Ag则液相温度下降，2.5重量％时达到共晶温度262℃。再加入Ag，9重量％时，达到350℃(参见表1中的示例，组成25)，几乎达到加热温度上限。 
以Bi为主成分的接合材料的重量为100时，Cu及Ag析出到Bi组织的内部，有利于金属强度的提高。因此，Cu及Ag最好是至少0.1重量％以上。 
这里，表1是熔融温度和故障循环数随本实施方式的接合材料的组成而变化的图。 
[表1] 
Figure DEST_PATH_GPA00001320312300041
由表1可知，组成1～组成25是熔融温度为260℃以上且351℃以下、 含有选自0.1～1重量％的Cu及0.1～9重量％的Ag的1种以上的元素且含有90重量％以上的作为除了不可避免的杂质以外的余部的Bi的接合材料。此外，接合材料可以在熔融温度为260℃以上且351℃以下的范围内使用任意的组成。 
表1中，组成1～组成13表示将Al的量固定为0，使碳量和Cu或Ag的量变化的情况。 
组成1～组成6的A组与组成7～组成13的B组的不同点是，A组为将Ag的量固定为0，使Cu的量变化，而B组为将Cu的量固定为0，使Ag的量变化。 
此外，组成14～组成18表示将碳量固定为0，使Al的量变化的情况。 
组成19～组成20表示将Al的量固定为0，除碳以外，还含有B或Si及Cu或Ag的情况。 
组成21～组成23表示将碳的量固定为0，除Al以外，还含有B、Si或Be及Cu及/或Ag的情况。 
组成24～25表示含有碳和Al两者的情况。 
该构成，通过在以Bi为主成分的接合材料中加入含碳105或Al的金属配合物，可以缓和来源于半导体元件和电极的线膨胀系数之差的应力，由此可以良好的品质接合半导体元件和电极，提高接合可靠性。 
产业上利用的可行性 
本发明的接合结构体、接合材料及接合材料的制造方法可以降低半导体元件和电极的线膨胀系数之差导致的接合部的破坏，适用于功率半导体、小功率晶体管等半导体封装的用途。 
符号的说明 
1、半导体零部件 
2、基板 
3、焊接材料 
4、外部电极 
5、基板电极 
6、半导体元件 
7、11、电极 
8、接合材料 
9、功率半导体模块 
10、功率半导体元件 
12、接合部 
13、Cu层 
100、半导体零部件 
101、基板 
102、半导体元件 
103、电极 
104、接合材料 
105、碳 

Claims (8)

1.接合结构体，其特征在于，包括半导体元件、与所述半导体元件对置的电极、连接所述半导体元件与所述电极的以Bi为主成分的接合材料，所述以Bi为主成分的接合材料含有碳化合物，所述碳化合物为具有配体的金属配合物包含的碳化合物，
所述Bi的晶格之间分散着作为所述碳化合物的构成元素的碳。
2.如权利要求1所述的接合结构体，其特征在于，所述配体具有选自羧基、醛基、硫醇基、羟基、膦基、氨基及甲基的至少1种的官能团。
3.如权利要求1所述的接合结构体，其特征在于，构成所述金属配合物的金属为Bi。
4.如权利要求1所述的接合结构体，其特征在于，所述接合材料含有选自0.1～1重量％的Cu与0.1～9重量％的Ag的1种以上的元素、Bi含量为90重量％以上的金属材料和0.02～0.25重量％的所述碳。
5.接合材料，它是将半导体元件和与所述半导体元件对置的电极接合的以Bi为主成分的接合材料，其特征在于，所述接合材料含有碳化合物，所述碳化合物为具有配体的金属配合物包含的碳化合物，所述Bi的晶格之间分散着作为所述碳化合物的构成元素的碳。
6.如权利要求5所述的接合材料，其特征在于，含有所述碳化合物的所述金属配合物的所述配体具有选自羧基、醛基、硫醇基、羟基、膦基、氨基及甲基的至少1种的官能团。
7.接合材料的制造方法，它是将半导体元件和与所述半导体元件对置的电极接合的以Bi为主成分的接合材料的制造方法，其特征在于，包括在所述电极的表面形成Cu层的Cu层形成工序；对形成有所述Cu层的电极形成包含碳化合物的、具有配体的Bi配合物的层的Bi配合物层形成工序；将形成有所述Bi配合物层的电极加热至所述Bi的熔点以上的加热工序，
所述Bi配合物的层中，所述Bi的晶格之间分散着作为所述碳化合物的构成元素的碳。
8.如权利要求7所述的接合材料的制造方法，其特征在于，所述配体具有选自羧基、醛基、硫醇基、羟基、膦基、氨基及甲基的至少1种的官能团。
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