CN102130672A - Isolated circuit for improving zero offset of diode and signal switch control circuit - Google Patents
Isolated circuit for improving zero offset of diode and signal switch control circuit Download PDFInfo
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- CN102130672A CN102130672A CN 201010589309 CN201010589309A CN102130672A CN 102130672 A CN102130672 A CN 102130672A CN 201010589309 CN201010589309 CN 201010589309 CN 201010589309 A CN201010589309 A CN 201010589309A CN 102130672 A CN102130672 A CN 102130672A
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- Prior art keywords
- diode
- zero offset
- matching unit
- resonance matching
- inductance
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- 239000003990 capacitor Substances 0.000 claims abstract description 22
- 230000003071 parasitic effect Effects 0.000 claims abstract description 8
- 230000011664 signaling Effects 0.000 claims description 10
- 230000006698 induction Effects 0.000 claims description 9
- 238000005538 encapsulation Methods 0.000 claims description 7
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 238000003780 insertion Methods 0.000 abstract description 7
- 238000002955 isolation Methods 0.000 abstract description 2
- 230000037431 insertion Effects 0.000 description 6
- 230000002238 attenuated effect Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012797 qualification Methods 0.000 description 1
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Abstract
The invention provides an isolated circuit for improving the zero offset of a diode and a signal switch control circuit, belonging to the technical field of signal switch control circuits. The isolated circuit for improving the zero offset of a diode comprises a power supply unit (PSU), a stopping element and a resonance matching unit. According to the invention, when a diode is in a zero offset state, the resonance matching unit and a parasitic capacitor packed inside the diode form a LC resonance, so that the diode has resonance in a narrower actually-applied frequency range, therefore, the diode has the characteristics of low-insertion loss, as well as high isolation and zero offset.
Description
Technical field
The invention belongs to signaling switch control circuit technical field, relate in particular to a kind of raising diode zero offset buffer circuit and signaling switch control circuit.
Background technology
Because diode has the low characteristic of the loss of insertion when conducting, when zero offset, have high characteristic of isolating, therefore can be applied on the switching circuit.
But because the encapsulation of diode itself can produce parasitic capacitance, thereby make the insertion loss of diode and zero offset isolate growth and decline each other, existing diode can't be when possessing the low characteristic of insertion loss, also satisfy the high characteristic of isolating of zero offset, and can only compromise both performance of traditional processing mode.
Summary of the invention
The purpose of the embodiment of the invention is to provide a kind of raising diode zero offset buffer circuit, is intended to solve existing diode and exists and can't also satisfy the problem of the high characteristic of isolating of zero offset when possessing the low characteristic of insertion loss.
The embodiment of the invention is achieved in that a kind of raising diode zero offset buffer circuit, is connected with diode, and described raising diode zero offset buffer circuit comprises:
Be connected with the anode of described diode, the power supply unit of voltage is provided for described diode, described raising diode zero offset buffer circuit also comprises every straight element and resonance matching unit, the negative electrode of the described diode of first termination of described resonance matching unit, second termination of described resonance matching unit is every first end of straight element, the anode of the described described diode of second termination every straight element;
Described resonance matching unit is used for when diode is in zero bias condition, and the parasitic capacitance formation LC resonance with the inner encapsulation of diode makes diode resonance in narrower practical application frequency range, improves the zero offset of diode and isolates.
Another purpose of the embodiment of the invention is to provide a kind of signaling switch control circuit that improves diode zero offset buffer circuit that comprises.
In embodiments of the present invention, when diode is in zero bias condition, the resonance matching unit constitutes LC resonance with the parasitic capacitance of the inner encapsulation of diode, make diode resonance in narrower practical application frequency range, make diode when possessing the low characteristic of insertion loss, also possess the high characteristic of isolating of zero offset.
Description of drawings
Fig. 1 is the structure chart of the raising diode zero offset buffer circuit that provides of first embodiment of the invention;
Fig. 2 is the structure chart of the raising diode zero offset buffer circuit that provides of second embodiment of the invention;
Fig. 3 is the structure chart of the raising diode zero offset buffer circuit that provides of third embodiment of the invention.
Embodiment
In order to make purpose of the present invention, technical scheme and advantage clearer,, the present invention is further elaborated below in conjunction with drawings and Examples.Should be appreciated that specific embodiment described herein only in order to explanation the present invention, and be not used in qualification the present invention.
Fig. 1 shows the structure of the raising diode zero offset buffer circuit that first embodiment of the invention provides, and for convenience of explanation, only shows part related to the present invention.
A kind of raising diode zero offset buffer circuit, D1 is connected with diode, improve diode zero offset buffer circuit comprise power supply unit 100, every straight element 200 and resonance matching unit 300.
The negative electrode of the first terminating diode D1 of resonance matching unit 300, second termination of resonance matching unit 300 be every first end of straight element 200, every the anode of the second terminating diode D1 of straight element 200;
As one embodiment of the invention, resonance matching unit 300 adopts inductance L 1, and first end of inductance L 1 is first end of resonance matching unit 300, and second end of inductance L 1 is second end of resonance matching unit 300.
As one embodiment of the invention, adopt capacitance C1 every straight element 200, first end of capacitance C1 is first end every straight element 200, second end of capacitance C1 is second end every straight element 200.
As one embodiment of the invention, power supply unit 100 comprises:
Choke induction L2, resistance R 1, filter capacitor C2 and filter capacitor C3;
The anode of the first terminating diode D1 of choke induction L2, second end of choke induction L2 is leaded up to filter capacitor C3 ground connection, first end of another road of second end of choke induction L2 connecting resistance R1, second end of resistance R 1 is leaded up to filter capacitor C2 ground connection, and another road of second end of resistance R 1 connects power supply.
Fig. 2 shows the structure of the raising diode zero offset buffer circuit that second embodiment of the invention provides, and for convenience of explanation, only shows part related to the present invention.
Fig. 3 shows the structure of the raising diode zero offset buffer circuit that third embodiment of the invention provides, and for convenience of explanation, only shows part related to the present invention.
As one embodiment of the invention, the signaling switch control circuit comprises that tower puts bypass resistance, radio-frequency switch circuit, control system and base station sub-system.
The operation principle that improves diode zero offset buffer circuit is as follows:
Give diode D1 when power supply unit 100 voltage that is higher than diode D1 conducting is provided, diode D1 is in conducting state, including elements such as choke induction and filter capacitor in the power supply unit 100 can not be attenuated by power supply unit 100 for making Continuity signal, capacitance C1 provides every straight function for resonance matching unit 300, guarantees that diode D1 is in conducting state.
Give diode D1 when power supply unit 100 voltage that is lower than diode D1 conducting is provided, diode D1 is in zero bias condition, diode D1 is in the high resistant or the state of isolation, inductance L 1 constitutes LC resonance with the parasitic capacitance of the inner encapsulation of diode D1, make diode D1 resonance in narrower practical application frequency range, improve the zero offset of diode D1 and isolate.
In embodiments of the present invention, when diode is in zero bias condition, the resonance matching unit constitutes LC resonance with the parasitic capacitance of the inner encapsulation of diode, make diode resonance in narrower practical application frequency range, make diode when possessing the low characteristic of insertion loss, also possess the high characteristic of isolating of zero offset.
The above only is preferred embodiment of the present invention, not in order to restriction the present invention, all any modifications of being done within the spirit and principles in the present invention, is equal to and replaces and improvement etc., all should be included within protection scope of the present invention.
Claims (8)
1. one kind is improved diode zero offset buffer circuit, is connected with diode, it is characterized in that described raising diode zero offset buffer circuit comprises:
Be connected with the anode of described diode, the power supply unit of voltage is provided for described diode, described raising diode zero offset buffer circuit also comprises every straight element and resonance matching unit, the negative electrode of the described diode of first termination of described resonance matching unit, second termination of described resonance matching unit is every first end of straight element, the anode of the described described diode of second termination every straight element;
Described resonance matching unit is used for when diode is in zero bias condition, and the parasitic capacitance formation LC resonance with the inner encapsulation of diode makes diode resonance in narrower practical application frequency range, improves the zero offset of diode and isolates.
2. raising diode zero offset buffer circuit as claimed in claim 1, it is characterized in that, described resonance matching unit adopts inductance L 1, and first end of described inductance L 1 is first end of described resonance matching unit, and second end of described inductance L 1 is second end of described resonance matching unit.
3. raising diode zero offset buffer circuit as claimed in claim 1, it is characterized in that, described resonance matching unit adopts inductance L 3 and capacitor C 4 in parallel, first public connecting end of described inductance L 3 and capacitor C 4 is first end of described resonance matching unit, and second public connecting end of described inductance L 3 and capacitor C 4 is second end of described resonance matching unit.
4. raising diode zero offset buffer circuit as claimed in claim 1, it is characterized in that, described resonance matching unit adopts the inductance L 4 and the capacitor C 5 of series connection, first end of described capacitor C 5 is first end of described resonance matching unit, first end of the second termination inductance L 4 of described capacitor C 5, second end of described inductance L 4 is second end of described resonance matching unit.
5. raising diode zero offset buffer circuit as claimed in claim 1, it is characterized in that, described first end of described capacitance C1 is described first end every straight element every straight element employing capacitance C1, and second end of described capacitance C1 is described second end every straight element.
6. raising diode zero offset buffer circuit as claimed in claim 1 is characterized in that described power supply unit comprises:
Choke induction L2, resistance R 1, filter capacitor C2 and filter capacitor C3;
The anode of the described diode of first termination of described choke induction L2, second end of described choke induction L2 is leaded up to filter capacitor C3 ground connection, another road of second end of described choke induction L2 connects first end of described resistance R 1, second end of described resistance R 1 is leaded up to filter capacitor C2 ground connection, and another road of second end of described resistance R 1 connects power supply.
7. a signaling switch control circuit is characterized in that, described signaling switch control circuit comprises each described raising diode zero offset buffer circuit as claim 1-6.
8. signaling switch control circuit as claimed in claim 7 is characterized in that, described signaling switch control circuit comprises that tower puts bypass resistance, radio-frequency switch circuit, control system and base station sub-system.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010589309 CN102130672A (en) | 2010-12-15 | 2010-12-15 | Isolated circuit for improving zero offset of diode and signal switch control circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010589309 CN102130672A (en) | 2010-12-15 | 2010-12-15 | Isolated circuit for improving zero offset of diode and signal switch control circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102130672A true CN102130672A (en) | 2011-07-20 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201010589309 Pending CN102130672A (en) | 2010-12-15 | 2010-12-15 | Isolated circuit for improving zero offset of diode and signal switch control circuit |
Country Status (1)
| Country | Link |
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| CN (1) | CN102130672A (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1225751A (en) * | 1997-06-03 | 1999-08-11 | 松下电器产业株式会社 | Two-frequency switch, device using two-frequency antenna in common and mobile radio communication equipment |
| CN101473488A (en) * | 2006-04-28 | 2009-07-01 | 鲁库斯无线公司 | Pin diode network for multiband RF coupling |
-
2010
- 2010-12-15 CN CN 201010589309 patent/CN102130672A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1225751A (en) * | 1997-06-03 | 1999-08-11 | 松下电器产业株式会社 | Two-frequency switch, device using two-frequency antenna in common and mobile radio communication equipment |
| CN101473488A (en) * | 2006-04-28 | 2009-07-01 | 鲁库斯无线公司 | Pin diode network for multiband RF coupling |
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Application publication date: 20110720 |