CN102124566B - High gain read circuit for 3D integrated pixel - Google Patents

High gain read circuit for 3D integrated pixel Download PDF

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CN102124566B
CN102124566B CN2009801316988A CN200980131698A CN102124566B CN 102124566 B CN102124566 B CN 102124566B CN 2009801316988 A CN2009801316988 A CN 2009801316988A CN 200980131698 A CN200980131698 A CN 200980131698A CN 102124566 B CN102124566 B CN 102124566B
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amplifier
wafer
diffusion
floating
output
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CN102124566A (en
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约翰·P·麦卡滕
约瑟夫·R·苏马
托德·安德森
克里斯蒂安·亚历山德鲁·蒂瓦鲁斯
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Omnivision Technologies Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14634—Assemblies, i.e. Hybrid structures
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14636—Interconnect structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14641—Electronic components shared by two or more pixel-elements, e.g. one amplifier shared by two pixel elements
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/62—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/80001—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by connecting a bonding area directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding
    • H01L2224/808—Bonding techniques
    • H01L2224/80894—Direct bonding, i.e. joining surfaces by means of intermolecular attracting interactions at their interfaces, e.g. covalent bonds, van der Waals forces
    • H01L2224/80895—Direct bonding, i.e. joining surfaces by means of intermolecular attracting interactions at their interfaces, e.g. covalent bonds, van der Waals forces between electrically conductive surfaces, e.g. copper-copper direct bonding, surface activated bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/80001—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by connecting a bonding area directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding
    • H01L2224/808—Bonding techniques
    • H01L2224/80894—Direct bonding, i.e. joining surfaces by means of intermolecular attracting interactions at their interfaces, e.g. covalent bonds, van der Waals forces
    • H01L2224/80896—Direct bonding, i.e. joining surfaces by means of intermolecular attracting interactions at their interfaces, e.g. covalent bonds, van der Waals forces between electrically insulating surfaces, e.g. oxide or nitride layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements

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  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)

Abstract

An image sensor includes (a) a first wafer having (i) a photosensitive area and (ii) a charge-to-voltage conversion region; (b) a second wafer having (i) a first amplifier that receives a signal from the charge-to-voltage conversion region; (c) an electrical interconnect connecting the charge-to-voltage conversion region to an input of the amplifier; and (d) an electrically biased shield at least partially enclosing at least a portion of the electrical interconnect.

Description

The high-gain reading circuit that is used for the synthetic pixel of 3 dimensions
The present invention relates on two or more wafers CMOS (complementary metal oxide semiconductors (CMOS)) image sensing apparatus made with active parts, more specifically, relate to the amount of the signal noise of the imaging sensor device that reduces these types.
Background technology
Usually, along with the size of the pixel of using the manufacturing of CMOS technique is adjusted to less size, these are than some performance characteristics variation of small pixel.Particularly, the capacity of photodiode reduces.This has dwindled the dynamic range of imageing sensor.
Can regain part photodiode capacity by be converted to the 4 shared Pixel Designs of sharing Pixel Designs that are similar to shown in Figure 2 from as shown in fig. 1 unshared formula Pixel Design.The unshared formula design of Fig. 1 comprises that collection is in response to the photodiode 1 of the electric charge of illumination with for the transfer gate 2 that electric charge is transferred to the diffusion of floating (floating diffusion) 3 from photodiode 1.Source follower amplifier 5 sense charge, and as response, source follower amplifier 5 is passed to its output signal on the output line 8 via output 9.Reset transistor 4 makes the diffusion of floating 3 be reset to the prearranged signals level, and row selecting transistor 7 is selectively activated in order to the output of source follower amplifier 5 is passed to output line 8.
With reference to figure 2, show shared Pixel Design, it has the parts identical with unshared formula Pixel Design, only reset transistor 4, source follower amplifier 5 and row selecting transistor 7 are shared by a plurality of photodiodes 11,12,13 and 14, and described photodiode 11,12,13 and 14 electric charge are shifted by transfer gate 15,16,17 and 18 respectively.This has reduced the transistorized number of each pixel, thereby allows larger photodiode area and therefore large photodiode capacity is arranged.
A shortcoming of shared pixel method is the increase of diffusion 19,20,21 and 22 on electric capacity of floating.Because floating diffusion node by the electricity consumption line parallel link together, so nuclear each pixel in (kernel) increases electric capacity.As defined herein, " nuclear " is defined as the set of the pixel of the shared same diffusion of floating.The electric capacity that increases the diffusion of floating can reduce to be given to the voltage charge conversion ratio of source follower amplifier 5.The electric capacity that increases the diffusion of floating can increase electron read noise.Increase electron read noise and can dwindle dynamic range.Yet for great majority were used, the beneficial effect of the area by changing to increase photodiode to shared pixel architecture surpassed negative effect.
Can effectively reduce the electric capacity of diffusion of floating with feedback.As shown in Fig. 3 a, show the shared design as among Fig. 2, only the interconnection float the diffusion float diffusing lines 31 physically on the shielding conductor 30 as shown in Fig. 3 b.Shielding conductor 30 is electrically connected to the output 9 of source follower (SF) amplifier 5.In unshowned another configuration, from aforementioned different, shielding conductor is connected to the Vout 8 of row selecting transistor 7.Because the signal of output 9 is followed voltage in the diffusion 19,20,21,22 of floating, the voltage so the voltage follow in the shielding is floated in the diffusion to be bordering on 1 gain.Shielded the diffusing lines 31 of floating by using with the biased shielding of Vout, the parasitic capacitance of the interconnection of the diffusion that reduced to float, thus cause the voltage charge conversion than increasing.
Recently, the integrated a burst of agitation of 3 dimensions that realizes pixel by stacking two or more silicon wafers with electrical interconnection between two wafers was arranged.An embodiment of this technology of diagram in Fig. 4.This embodiment is identical with Fig. 2, different is that photodiode 23a, 23b, 24a and 24b and transfer gate 25a, 25b, 26a and 26b are positioned on the sensor wafer 40, and all the other transistors are by on the circuit chip (CW) 41 below sensor wafer (SW) 40 moves to pixel.Photodiode 23a, 23b, 24a and 24b are comprised in by in two dielectric layers 43 and 54 active layers that define (silicon) 42.The active layer (silicon) 67 that transistor is moved on the CW 41 can increase the area of photodiode (PD), thereby increases the capacity of PD and therefore increase dynamic range.Yet one of passive aspect of the method is owing to there are the more parasitism diffusion capacitance of floating in the electrical interconnection 55 between two wafers and electrical interconnection line 52.
Another shortcoming of 3 dimension methods shown in Fig. 4 is to have more cross capacitance between the diffusing lines floating, and this causes more electricity to be crosstalked.
Therefore, need a kind of Pixel Design that overcomes above-mentioned shortcoming.
Summary of the invention
The invention is intended to overcome one or more in the problem mentioned above.In brief, with the metal wire of metallic shield encirclement with the transistor interconnection on floating diffusion and the circuit chip on the sensor wafer.This metallic shield is connected to gain greater than zero amplifier.The voltage on the floating diffusion node is followed in the output of this amplifier.This can reduce the diffusion capacitance of floating.This shielding also reduces adjacent nearly all undesired electric coupling of floating between the diffusion, thereby makes electric crosstalk minimization.
Description of drawings
By with reference to the detailed description of the invention of carrying out below in conjunction with accompanying drawing, above-mentioned and other objects, features and advantages of the present invention will become more apparent, in the accompanying drawings:
Fig. 1 illustrates the circuit diagram of the unshared formula pixel of prior art;
Fig. 2 illustrates the circuit diagram that 4 of prior art is shared pixel;
Fig. 3 a illustrates feedback is shared pixels with 4 of the diffusion capacitance that reduces to float the circuit diagram that has of prior art;
Fig. 3 b is the cross-sectional view along Fig. 3 a of A-A;
The use that Fig. 4 illustrates prior art has the cross-sectional view of pixel of the stacking manufacturing of the wafer of electrical interconnection and wafer;
Fig. 5 illustrates the first embodiment of the present invention.Conductive shield surrounds the wire with two wafer electric interconnection.This shields to reduce the diffusion capacitance of floating to bring in driving by the output of source follower transistor;
Fig. 6 is the circuit diagram corresponding to the single core of Fig. 6;
Fig. 7 illustrates the second embodiment of the present invention.Come driven shield further to reduce the diffusion capacitance of floating with voltage gain greater than one amplifier;
Fig. 8 illustrates the circuit diagram corresponding to the single core of Fig. 8;
Fig. 9 illustrates an example of the voltage amplification of the shielding of using charge pump;
Figure 10 is an example of carrying out the sequential of clock control for the switching transistor to the charge pump circuit figure of Figure 11; And
Figure 11 is the diagram be used to the digital camera that illustrates the habitual typical commercial embodiment of the present invention of ordinary consumer.
Embodiment
As shown in Fig. 5 and Fig. 6, imageing sensor 39 of the present invention is shown.Imageing sensor 39 comprises sensor wafer 40 and circuit chip 41.It should be noted that for for simplicity illustrated Fig. 6 only illustrates two photosensitive areas, be preferably photodiode 35 and 36 and transfer gates 44 and 45.Fig. 5 illustrates another and organizes these parts to illustrate pel array in the repeatability aspect the 26S Proteasome Structure and Function two.Sensor wafer 40 comprises four photosensitive areas 35,36,37 and 38, is preferably photodiode, and each photodiode response is collected electric charge in incident light.Sensor wafer 40 also comprises respectively and each photodiode 35,36,37 and 38 transfer gates that are associated 44,45,46 and 47. Transfer gate 44 and 45 optionally and respectively makes electric charge be transferred to charge voltage transition zone 49 from photodiode 35 and 36, and it is preferably the diffusion 49 of floating.In for the process of the Performance optimization of photodiode, make up sensor wafer 40.The nuclear that sensor wafer 40 forms only comprise the photodiode 35 and 36 that a floating diffusion node 49 carried out feed, photodiode 35 and 36 with a described floating diffusion node 49 between transfer gate 44 and 45 and spacer 51 (Fig. 5) that photodiode and float diffusion and other photodiode 37 and 38 are separated.Single metal layer 53 provide with transfer gate 44,45,46 with being connected of being connected.In case of necessity, can comprise that on sensor wafer 40 two or more metal levels are used for the connection of transfer gate.
The sensor wafer 40 that is thinned is electrically connected to circuit chip 41 via connector 56.The electrical interconnection 68 of the diffusion 49,65 of floating between connecting sensor wafer 40 and the circuit chip 41 is surrounded by metallic shield 100.Metallic shield 100 is comprised of the metal segments in each metal level 57 to 64 and the electrical interconnection between the metal level 70 to 76 on the circuit chip 41.Metallic shield 100 is electrically connected to the output 109 of source follower amplifier 105 via electric connector 101, thus the effective capacitance of the diffusion that reduces to float.Another benefit of metallic shield 100 is will float capacitive coupling between the adjacent wires of electrical interconnections 68 of diffusion 49,65 interconnection of its minimizing, crosstalks thereby reduce electricity.
Circuit chip 41 comprises another charge voltage transition zone, being preferably the diffusion 65 of floating, and it becomes voltage with the diffusion 49 of floating combine that jointly will being passed to floats and spread 49 charge conversion.Source follower amplifier 105 on the circuit chip 41 is amplified in the voltage of output on the output line 108.Circuit chip 41 also comprises the reset gate 104 that the voltage in the diffusion 65 of floating is reset to predetermined level.Circuit chip 41 also comprises for optionally allowing the output 109 of source follower 105 and the row selecting transistor 107 of output line 108 connections.
For above-described embodiment, nuclear is comprised of two photodiodes.Yet, endorsing with by only a photodiode or two or more photodiodes form on the sensor wafer 40.
The design of great majority four transistors (4T-pixel) formulas be similar to shown in Fig. 1 to Fig. 3 the source follower amplifier drive the large electric capacity of column circuits.Yet the voltage amplification coefficient of source follower circuit is less than one.The second embodiment that Fig. 7 and Fig. 8 diagram is amplified the voltage of the metallic shield 100 that puts on the electrical interconnection 68 of surrounding wafer and wafer.The effective capacitance of this diffusion 49 and 65 that reduced to float.It should be noted that this embodiment is identical with Fig. 7, only attached voltage amplifier 120 between the output 109 of metallic shield 100 and source follower amplifier 105.More specifically, the input of voltage amplifier 120 is connected to the output 109 of source follower amplifier 105.Perhaps, the input of voltage amplifier 120 is connected to the output (referring to dotted line) of row selecting transistor 107.Input voltage to amplifier 120 need to be directly proportional with the electric charge in the diffusion 49 and 65 of floating.For the circuit diagram of Fig. 8, the effective capacitance of the diffusion 49 and 65 of floating is C g+ C s* (1-A v).Wherein, C gBe floating node 49,65 and ground between total capacitance, C sThe 110th, the electric capacity between electrical interconnection 68 and the shielding 100.It should be noted that if A vExcessive, then effective capacitance is negative, and circuit becomes unstable.
Fig. 9 illustrates the 3rd embodiment.This embodiment is identical with Fig. 8, and only charge pump 111,140,141,142,143 (this charge pump is comprised of parts 111,140,141,142,143) has replaced amplifier 120.Charge pump 111,140,141,142,143 is compared very little with other circuit that uses operational amplifier.This provides the gain greater than 1, and does not require operational amplifier.Sequential for switching transistor phi_1 141, phi_2 142 and phi_3 143 shown in Figure 10.When being transferred to, electric charge floats diffusion 49 and 65 the time, phi_1 141 and phi_3 143 conductings, and phi_2142 cut-off.The gain of supposing source follower transistor is 1, and then the initial output voltage from source follower amplifier 105 is Q FD/ C FD, wherein, Q FDThe electric charge on the floating diffusion node, and C FDIt is the diffusion capacitance of effectively floating that is not included in the electric capacity of shielding.Next, increase voltage in the shielding with charge pump.At first make phi_1 141 cut-offs, then make phi_3 143 cut-offs, then make phi_2 142 conductings.Output voltage from source follower is (1+C now SH* C S/ ((C SH+ C S) * C FD)) * Q FD/ C FD, wherein, C SHThe 111st, float diffusion with shield between parasitic capacitance, and C SG140.Among Figure 10, SHR and SHS represent sample-hold-reset and sample-hold-sampling.
Figure 11 is the block diagram of the imaging system that can use with imageing sensor of the present invention 39.Imaging system 1200 comprises Digital photographic phone 1202 and computing equipment 1204.Digital photographic phone 1202 is examples can using the image picking-up apparatus that combines imageing sensor of the present invention.Also can use the image picking-up apparatus of other type, such as digital camera and digital camera together with the present invention.
In according to one embodiment of present invention, Digital photographic phone 1202 is portable, hand-held, battery powered equipment.Digital photographic phone 1202 produces the digital picture that is stored in the memory 1206, and memory 1206 can be that for example inner flash EPROM (EPROM (Erasable Programmable Read Only Memory)) memory maybe can unload storage card.Perhaps can use such as the digital picture storage medium of other types such as magnetic hard-disk, tape or CD and realize memory 1206.
Digital photographic phone 1202 usefulness lens 1201 focus on the imageing sensor 39 of CMOS active pixel sensor 1212 light from the scenery (not shown).In according to one embodiment of present invention, imageing sensor 39 provides the color image information that uses Bayer (Bayer) color filter pattern.Imageing sensor 39 is controlled by timing sequencer 1214, and timing sequencer 1214 is also controlled photoflash lamp 1216 in order to when ambient lighting is low scenery is thrown light on.
Be exaggerated and converted to numerical data by modulus (A/D) converter circuit 1218 from the analog output signal of imageing sensor 39 output.This numerical data is stored in the buffer storage 1220, and is processed by digital processing unit 1222 subsequently.Digital processing unit 1222 is controlled by the firmware that is stored in the firmware memory 1224, and firmware memory 1224 can be the flash eprom memory.Digital processing unit 1222 comprises real-time clock 1226, though when Digital photographic phone 1202 and digital processing unit 1222 are in low power state real-time clock 1226 also retention date and time.Digital image file after the processing is stored in the memory 1206.Memory 1206 can also be stored the data of other type, such as music file (such as MP3 (dynamic image expert compression standard audio frequency aspect 3) file), the tinkle of bells, telephone number, calendar and do list etc.
In according to one embodiment of present invention, Digital photographic phone 1202 is taken rest image.Digital processing unit 1222 is carried out color interpolation, then carries out color and tonal correction, in order to produce sRGB (standard RGB) view data after playing up.Then, the sRGB view data after playing up is compressed and be stored in the memory 1206 as image file.Only as example, for example can come compressing image data according to JPEG (joint image expert group) form, jpeg format uses known " Exif " (" exchangeable image file ") pixel format.This form comprises the Exif application fragment of the specific image metadata of storage use various TIFF (TIF) label.Date and time, lens f value (f/number) and other camera that independent TIFF label can be used to for example store pictures taken arrange, and the memory image explanation.
In according to one embodiment of present invention, the different picture size that digital processing unit 1222 produces by user selection.A kind of such size is low resolution " thumbnail " sized image.In the commonly assigned U.S. Patent number 5164831 that is entitled as " Electronic Still Camera Providing Multi-Format Storage Of Full And Reduced Resolution Images " of authorizing the people such as Kuchta, the image that generates thumbnail dimensions has been described.This thumbnail image is stored in RAM (random access memory) memory 1228 and offers color monitor 1230, and color monitor 1230 can for example be thin film transistor，Bao Mojingtiguan (liquid crystal display) or Organic Light Emitting Diode (OLED).The image that generates thumbnail dimensions allows to check rapidly captured image on color monitor 1230.
In according to another embodiment of the present invention, Digital photographic phone 1202 also produces and the store video montage.Be added together (for example with the pixel addition of same color in the zone of each 4 row * 4 row of imageing sensor 39) by a plurality of pixels with imageing sensor 39 and produce this video clipping with the video frame image that creates low resolution.For example the read-out speed with per second 15 frames regularly reads video frame image from image sensor array 1210.
Audio codec 1232 is connected to digital processing unit 1222, and from microphone (Mic) 1234 received audio signals.Audio codec 1232 also provides audio signal to loud speaker 1236.These parts are used to telephone talk, and for recording and resetting and follow the track of video sequence or rest image.
In according to one embodiment of present invention, loud speaker 1236 also is used to the call of informing that the user squeezes into.This can be stored in the firmware memory 1224 the standard the tinkle of bells or by using the self-defined the tinkle of bells of downloading and being stored in the memory 1206 from mobile telephone network 1238 to finish.In addition, can provide noiseless (for example inaudible) notice to the call of squeezing into the vibratory equipment (not shown).
Digital processing unit 1222 is connected to radio modem 1240, this so that Digital photographic phone 1202 can send and receive information via radio frequency (RF) channel 1242.Radio modem 1240 uses such as another RF link (not shown) that is 3GSM (third generation global system for mobile communications) network to communicate with mobile telephone network 1238.Mobile telephone network 1238 and storage communicate from the photo service supplier 1244 of the digital picture that Digital photographic phone 1202 is uploaded.The miscellaneous equipment that comprises computing equipment 1204 visits these images via the Internet 1246.In according to one embodiment of present invention, mobile telephone network 1238 is also connected to the standard telephone network (not shown), in order to normal telephone service is provided.
The graphic user interface (not shown) is displayed on the display 1230, and is controlled by user's controlling mechanism 1248.In an embodiment according to the present invention, user's controlling mechanism 1248 comprises dedicated button (for example telephone keypad), the controlling mechanism that pattern (for example " phone " pattern, " calendar " pattern, " camera " pattern) is set of dialing the number, comprises 4 Joystick controller or " selection " switches to control (upper and lower, left and right) and button center " OK ".
Battery (not shown) in 1250 pairs of digital camera phones 1202 of base (dock) charges.Charging base 1250 is connected to computing equipment 1204 via charging base interface 1252 with Digital photographic phone 1202.In according to one embodiment of present invention, charging base interface 1252 is implemented as wireline interface, such as USB (USB) interface.Perhaps, in according to other embodiments of the invention, charging base interface 1252 is implemented as wave point, such as bluetooth or IEEE 802.11b wave point.Charging base interface 1252 is used to image is downloaded to computing equipment 1204 from memory 1206.Charging base interface 1252 also is used to calendar information is transferred to memory 1206 the Digital photographic phone 1202 from computing equipment 1204.
With reference to preferred embodiment the present invention has been described.Three other embodiment have been described.However, it should be understood that in the situation that does not depart from scope of the present invention those of ordinary skill in the art can realize change and revise.
List of parts
1 photodiode
2 transfer gates
3 diffusions of floating
4 reset transistors
5 source follower amplifiers
7 row selecting transistors
8 output lines
9 outputs
The 11-14 photodiode
The 15-18 transfer gate
The 19-22 diffusion of floating
23a, 23b, 24a, 24b photodiode
25a, 25b, 26a, 26b transfer gate
30 shielding conductors
31 diffusing lines
35-38 photodiode/photosensitive area
39 imageing sensors
40 sensor wafers
41 circuit chips
42 active layers
43 dielectric layers
The 44-47 transfer gate
The 49 charge voltage transition zones/diffusion of floating
51 spacers
52 electrical interconnection lines
53 metallization
54 dielectric layers
55 electrical interconnections
56 connectors
The 57-64 metal level
65 diffusion/the floating nodes of floating
67 active layers
68 electrical interconnections
The 70-76 metal level
100 metallic shields
101 electric connectors
104 reset gate
105 source follower amplifiers
107 row selecting transistors
108 output lines
The output of 109 source follower amplifiers
110 electric charges
111,140-143 charge pump
120 voltage amplifiers
1200 imaging systems
1201 lens
1202 Digital photographic phones
1204 computing equipments
1206 memories
1210 image sensor arrays
1212 CMOS active pixel sensor
1214 timing sequencers
1216 photoflash lamps
1218 A/D converter circuit
1220 buffer storage
1222 digital processing units
1224 firmware memories
1226 clocks
1228 RAM memories
1230 color monitors
1232 audio codecs
1234 microphones
1236 loud speakers
1238 mobile telephone networks
1240 radio modems
1242 RF channels
1244 photo service suppliers
1246 the Internets
1248 user's controlling mechanisms
1250 charging bases
1252 charging base interfaces

Claims (10)

1. imageing sensor comprises:
(a) the first wafer, described the first wafer comprises:
(i) photosensitive area;
(ii) charge voltage transition zone;
(b) the second wafer, described the second wafer comprises:
(i) the first amplifier, it receives signal from described charge voltage transition zone;
(c) electrical interconnection, it is connected to described charge voltage transition zone the input of described amplifier;
(d) by the shielding of electrical bias, it surrounds at least a portion of described electrical interconnection at least in part.
2. imageing sensor as claimed in claim 1, wherein, the electrical bias in the described shielding is the output from described the first amplifier.
3. imageing sensor as claimed in claim 2 also comprises the second amplifier, and wherein, the input of described the second amplifier is the output of described the first amplifier, and described the second amplifier export to described shielding biasing.
4. imageing sensor as claimed in claim 3, wherein, described the second amplifier is gain greater than 1 amplifier.
5. imageing sensor as claimed in claim 3, wherein, described the second amplifier is charge pump circuit.
6. imaging device comprises:
Imageing sensor, described imageing sensor comprises:
(a) the first wafer, described the first wafer comprises:
(i) photosensitive area;
(ii) charge voltage transition zone;
(b) the second wafer, described the second wafer comprises:
(i) the first amplifier, it receives signal from described charge voltage transition zone;
(c) electrical interconnection, it is connected to described charge voltage transition zone the input of described amplifier;
(d) by the shielding of electrical bias, it surrounds at least a portion of described electrical interconnection at least in part.
7. imaging device as claimed in claim 6, wherein, the electrical bias in the described shielding is the output from described the first amplifier.
8. imaging device as claimed in claim 7 also comprises the second amplifier, and wherein, the input of described the second amplifier is the output of described the first amplifier, and described the second amplifier export to described shielding biasing.
9. imaging device as claimed in claim 8, wherein, described the second amplifier is gain greater than 1 amplifier.
10. imaging device as claimed in claim 8, wherein, described the second amplifier is charge pump circuit.
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