CN102122895A - Rectifier bridge circuit of automobile alternating-current (AC) generator - Google Patents
Rectifier bridge circuit of automobile alternating-current (AC) generator Download PDFInfo
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- CN102122895A CN102122895A CN2011100847902A CN201110084790A CN102122895A CN 102122895 A CN102122895 A CN 102122895A CN 2011100847902 A CN2011100847902 A CN 2011100847902A CN 201110084790 A CN201110084790 A CN 201110084790A CN 102122895 A CN102122895 A CN 102122895A
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Abstract
The invention provides a novel rectifier bridge circuit of an automobile alternating-current (AC) generator. The circuit comprises a high-end circuit and a low-end circuit for respectively processing a sine wave and an arc-sine wave for a phase voltage, wherein, the high-end circuit comprises a phase detection circuit, a metal-oxide-semiconductor field-effect transistor (MOSFET) drive circuit, a charge pump circuit, an MOSFET and a protection circuit of the MOSFET; and the low-end circuit comprises a phase detection circuit, an MOSFET drive circuit, an MOSFET and a protection circuit of the MOSFET. The novel rectifier bridge circuit has the advantages that by virtue of the characteristic of low voltage drop of the MOSFET, power loss caused by voltage drop in the case of using the original diode is greatly reduced; and low-speed output increase as well as energy conservation and consumption reduction are realized by improving efficiency so as to achieve the effect of environmental improvement.
Description
Technical field
The present invention is a kind of AC generator for vehicle novel rectifying bridge circuit, and belonging to vehicular alternating current generator changes the direct current rectification circuit.
Background technology
AC generator for vehicle all needs to install a voltage regulator and a rectifier bridge, voltage regulator is mainly used to control the output voltage electric current of generator, be automobile constant voltage is provided, automobile rectifier bridge is to change the AC signal that generator produces into direct current signal.Existing automobile current generator rectifier bridge all is to adopt diode that AC power is converted to DC power supply, and diode has the high pressure drop characteristic, and institute is so that power loss is more, and the volume of diode is bigger.
Summary of the invention
The objective of the invention is to solve above-mentioned existing existing problem, provide a kind of high efficiency to realize that low speed increases the AC generator for vehicle rectifier circuit of output and energy-conservation province consumption.
The present invention is achieved in that a voltage regulator and a rectifier bridge, the sine wave that this circuit comprises phase voltage is that high side circuitry and negative string ripple are the circuit that low side circuitry is handled respectively, and high side circuitry comprises phase-detection, metal oxide layer semiconductor field-effect transistor (being called for short MOSFET) drive circuit, charge pump, metal oxide layer semiconductor field-effect transistor (being called for short MOSFET) and protective circuit thereof; Low side circuitry comprises phase-detection, metal oxide layer semiconductor field-effect transistor (being called for short MOSFET) drive circuit, metal oxide layer semiconductor field-effect transistor (being called for short MOSFET) and protective circuit thereof.
1, high side circuitry:
B+ end of the present invention is connected with the drain electrode of the 4th diode D4 negative pole, the 5th diode D5 positive pole, the 4th voltage-stabiliser tube ZD4 positive pole and the first metal oxide layer semiconductor field-effect transistor M1.
The 4th diode D4 positive pole links to each other with the 17 resistance R 17, the 17 resistance R 17 other ends link to each other with the base stage of second capacitor C 2, the tenth resistance R the 10, the 11 resistance R 11 and the 4th triode Q4, and the tenth resistance R 10 other ends link to each other with the negative pole of the 5th diode D5 with the 16 resistance R the 16, the 12 resistance R 12 and the 3rd capacitor C 3; The collector electrode of the 4th triode Q4 links to each other with the base stage of the 3rd diode D3, the 16 resistance R 16 other ends and the 3rd triode Q3, the collector electrode of the 3rd triode Q3 is connected with the 12 resistance R 12 other ends, and its emitter connects the positive pole of the 3rd diode D3 and an end of the 13 resistance R 13.The other end of the 13 resistance R 13 joins with the 15 resistance R the 15, the 14 resistance R 14 respectively, the grid of the 15 resistance R 15 another side joint the 4th capacitor C the 4, the 18 resistance R 18, the 7th diode D7 negative pole, the 3rd voltage-stabiliser tube ZD3 and the first metal oxide layer semiconductor field-effect transistor M1.The 7th diode D7 positive pole links to each other with the 4th voltage-stabiliser tube ZD4 negative pole.The emitter of the source electrode of the first metal oxide layer semiconductor field-effect transistor M1, the negative pole of the 3rd voltage-stabiliser tube ZD3, the 18 resistance R 18 other ends, second capacitor C 2, the 3rd capacitor C 3, the 4th capacitor C 4 other ends and the 14 resistance R the 14, the 11 resistance R 11 other ends, the 4th triode Q4 is connected with phase terminal PHASE.
2, low side circuitry
B+ termination the 6th capacitor C 6 of the present invention, the second voltage-stabiliser tube ZD2 negative pole, the 3rd resistance R 3, the 7th resistance R 7 and first resistance R 1; The 6th capacitor C 6 is B+ end filter capacitor; Emitter, second resistance R 2 and first capacitor C 1 of the source electrode of the other end of the 6th capacitor C 6 and the first metal oxide layer semiconductor field-effect transistor M1, the first voltage-stabiliser tube ZD1 negative pole, the 9th resistance R 9, the 5th capacitor C 5, the 5th resistance R 5, the second triode Q2 link to each other.
The second diode D2 positive pole connects the 8th resistance R 8, the 8th resistance R 8 other ends and first capacitor C, 1 other end, first resistance R, 1 other end, the base stage of second resistance R, 2 other ends and the second triode Q2 links to each other, the collector electrode of the second triode Q2 connects the first diode D1 negative pole, the base stage of the 7th resistance R 7 opposite sides and the first triode Q1, the collector electrode of the first triode Q1 connects the 3rd resistance R 3 opposite sides, the first triode Q1 emitter connects anodal and the 4th resistance R 4 of the first diode D1, the 4th resistance R 4 opposite sides and the 5th resistance R 5, the 6th resistance R 6 links to each other the 6th resistance R 6 another side joint the 5th capacitor C 5, the 9th resistance R 9, the negative pole of the first voltage-stabiliser tube ZD1, the grid of the negative pole of the 6th diode D6 and the second metal oxide layer semiconductor field-effect transistor M2.The drain electrode of the second diode D2 negative pole and the second metal oxide layer semiconductor field-effect transistor M2 meets phase terminal PHASE.
M1 and M1 ', M2 and M2 ', M3 and M3 ', M4 and M4 ', M5 and M5 ', M6 and M6 ' are connected in parallel in the circuit, see Fig. 2.
Advantage of the present invention is, uses the rectifier bridge of MOSFET, adopts MOSFET to substitute diode AC power is converted to DC power supply, utilizes the low drop-out nature of MOSFET, and the power consumption that voltage drop causes when making former use diode significantly reduces; Realize that by raising the efficiency low speed increases output and energy-conservation province consumption, thereby reach the effect of enhancement of environment.
1) the diode power equation of original rectifier connection is:
P
C,D?=?2?*?V
D?*I
B
P
C, DThe dissipation power of-diode; V
D-diode drop; I
B-pass through diode current.
2) behind the replacement diode, the power equation when using MOSFET is:
P
C,FET=?2?*?R
DSON?*?I
B 2
P
C, FETThe dissipation power of-MOSFET; R
DSON-MOSFET conducting resistance; I
B-by the MOSFET electric current.
Because of R
DSONBe worth lowly more, power loss is more little, so adopt R
DSONLow MOSFET, or with MOSFET parallel connection (as Fig. 3), M1 is in parallel with M6 ' with M5 ', M6 with M4 ', M5 with M3 ', M4 with M2 ', M3 with M1 ', M2, back R in parallel
DSONBecome 1/2, can make power loss significantly reduce and improve effect.
The operation principle of drive circuit: when phase detecting circuit detects the last up voltage of phase place, will pass through the drive circuit enhancing signal, detect up to detector till the drop-out voltage of phase.As the feedback to drop-out voltage, the signal of M1 can be driven device and close up to reaching minimum voltage.After this, circuit enters the dead band, and the dead band can prevent to lead directly to.After entering the dead band passage, low end detector offers signal of driver, and grid voltage can offer the grid of M2 like this, makes the M2 conducting.
A circuitry phase wherein:
1, in the high side circuitry:
(1) phase detecting circuit 3: by the 4th diode D4, the 17 resistance R 17, the tenth resistance R the 10, the 11 resistance R 11 and second capacitor C 2 constitute, when high-end, phase detecting circuit detects the phase voltage of generator, phase voltage is then opened the first metal oxide layer semiconductor field-effect transistor M1 than battery tension height, and is low then close;
(2) the MOSFET drive circuit 4: by the 3rd triode Q3, the 4th triode Q4, the 3rd diode D3, the 16 resistance R the 16, the 12 resistance R the 12, the 13 resistance R the 13, the 14 resistance R the 14, the 15 resistance R 15 and the 4th capacitor C 4 constitute, be used for amplification voltage signal, the metal oxide layer semiconductor field-effect transistor M1 that wins can be opened;
(3) charge pump circuit 5 comprises the 5th diode D5 and the 3rd capacitor C 3, and in order to reach high-end required voltage, needing to increase charge pump 5 increases voltage, makes high-end energy operate as normal;
(4) MOSFET and protective circuit 6 thereof comprise: the first metal oxide layer semiconductor field-effect transistor M1; the 3rd voltage-stabiliser tube ZD3, the 4th voltage-stabiliser tube ZD4; the 16 resistance R 16 and the 7th diode D7; it mainly in order to protect the grid of the first metal oxide layer semiconductor field-effect transistor M1, improves its voltage endurance capability.
2, in the low side circuitry:
(1) phase detecting circuit 7 comprises: be made of the second diode D2, the 8th resistance R 8, first resistance R 1, second resistance R 2 and first capacitor C 1, when low side, phase detecting circuit detects the phase voltage of generator, when phase voltage is lower than low-voltage, the second metal oxide layer semiconductor field-effect transistor M2 opens, and height is then closed.
(2) MOSFET drive circuit 8 comprises: the first triode Q1, the second triode Q2, the first diode D1, the 7th resistance R 7, the 3rd resistance R 3, the 4th resistance R 4, the 5th resistance R 5, the 6th resistance R 6, the 7th resistance R 7 and the 5th capacitor C 5, be used for amplification voltage signal, make the second metal oxide layer semiconductor field-effect transistor M2 to open;
(3) MOSFET and protective circuit 9 thereof comprise: the second metal oxide layer semiconductor field-effect transistor M2; the second voltage-stabiliser tube ZD2, the first voltage-stabiliser tube ZD1; the 9th resistance R 9 and the 6th diode D6; it mainly in order to protect the grid of the second metal oxide layer semiconductor field-effect transistor M2, improves its voltage endurance capability.
Use the 6th diode D6, the 7th diode D7, the first voltage-stabiliser tube ZD1, the second voltage-stabiliser tube ZD2, the 3rd voltage-stabiliser tube ZD3, the 4th voltage-stabiliser tube ZD4 are in order to protect the grid of M1 and M2, to improve its voltage endurance capability.Observation circuit has designed safety margins in order to prevent " leading directly to ", and each switch has driving and the observation circuit of oneself.In order to drive rectifier bridge, every phase voltage all can have an observation circuit to be used for monitoring the zero crossing of stator phase voltage, and zero crossing produces a signal, and this signal is amplified and offer the grid of MOSFET by a drive circuit.This signal can cause soft switch change, in order to avoid produce transition effect.It is enough fast that this signal is wanted equally, so that the loss of switch can be ignored.
Description of drawings
Fig. 1 is generator principle figure of the present invention;
Fig. 2 is a MOSFET parallel circuits schematic diagram;
Fig. 3 is a wherein circuitry phase schematic diagram of the present invention.
Embodiment
Describe in detail below in conjunction with accompanying drawing: as shown in the figure, a voltage regulator 2 and a rectifier bridge 1;
High side circuitry:
In the 4th diode D4 negative pole in B+ of the present invention end and the high-end phase detecting circuit 3, the charge pump circuit 5 in diode D5 positive pole, MOSFET and the protective circuit 6 the 4th voltage-stabiliser tube ZD4 positive pole and the drain electrode of the first metal oxide layer semiconductor field-effect transistor M1 be connected.
The 4th diode D4 positive pole in the phase detecting circuit 3 links to each other with the 17 resistance R 17, the base stage of the 4th triode Q4 in the 17 R17 other end and second capacitor C 2, the tenth resistance R the 10, the 11 resistance R 11 and the MOSFET drive circuit 4 links to each other, and the 16 resistance R the 16, the 12 resistance R 12 in the tenth resistance R 10 other ends and the MOSFET drive circuit 4 and the 3rd capacitor C 3 in the charge pump circuit 5 link to each other with the negative pole of the 5th diode D5.The collector electrode of the 4th triode Q4 links to each other with the base stage of the 3rd diode D3, the 16 resistance R 16 other ends and the 3rd triode Q3, the collector electrode of the 3rd triode Q3 is connected with the 12 resistance R 12 other ends, and its emitter connects the positive pole of the 3rd diode D3 and an end of the 13 resistance R 13.The other end of the 13 resistance R 13 joins with the 15 resistance R the 15, the 14 resistance R 14 respectively, the grid of the 18 resistance R 18, the 7th diode D7 negative pole, the 3rd voltage-stabiliser tube ZD3 and the first metal oxide layer semiconductor field-effect transistor M1 in the 15 resistance R 15 another side joint the 4th capacitor C 4, MOSFET and the protective circuit 6.The 7th diode D7 positive pole links to each other with the 4th voltage-stabiliser tube ZD4 negative pole.The emitter of the 4th triode Q4 in the source electrode of the first metal oxide layer semiconductor field-effect transistor M1, the negative pole of the 3rd voltage-stabiliser tube ZD3, the 18 resistance R 18 other ends, second capacitor C 2, the 3rd capacitor C 3, the 4th capacitor C 4 other ends and the 14 resistance R the 14, the 11 resistance R 11 other ends, the MOSFET drive circuit 5 is connected with phase terminal PHASE.
Low side circuitry:
The 3rd resistance R 3, the 7th resistance R 7 and first resistance R 1 in the MOSFET of B+ termination the 6th capacitor C 6 of the present invention, low side phase detecting circuit 7 and the second voltage-stabiliser tube ZD2 negative pole in the protective circuit 9, the MOSFET drive circuit 7.The 6th capacitor C 6 is B+ end filter capacitor.The 5th capacitor C 5 in the source electrode of the first metal oxide layer semiconductor field-effect transistor M1 in the other end of the 6th capacitor C 6 and MOSFET and the protective circuit 9, the first voltage-stabiliser tube ZD1 negative pole, the 9th resistance R 9, the MOSFET drive circuit 8, the 5th resistance R 5, the emitter of the second triode Q2, second resistance R 2 and first capacitor C 1 in the phase detecting circuit 7 link to each other.
The second diode D2 positive pole in the phase detecting circuit 7 connects the 8th resistance R 8; the 8th resistance R 8 other ends and first capacitor C, 1 other end; first resistance R 1 is end in addition; the base stage of second resistance R, 2 other ends and the second triode Q2 links to each other; the collector electrode of the second triode Q2 in the MOSFET drive circuit 8 connects the first diode D1 negative pole; the base stage of the 7th resistance R 7 opposite sides and the first triode Q1; the collector electrode of the first triode Q1 connects the 3rd resistance R 3 opposite sides; the first triode Q1 emitter connects anodal and the 4th resistance R 4 of the first diode D1; the 4th resistance R 4 opposite sides and the 5th resistance R 5; the 6th resistance R 6 links to each other the 6th resistance R 6 another side joint the 5th capacitor C 5; the 9th resistance R 9 in MOSFET and the protective circuit 9; the negative pole of the first voltage-stabiliser tube ZD1; the grid of the negative pole of the 6th diode D6 and the second metal oxide layer semiconductor field-effect transistor M2.The drain electrode of the second metal oxide layer semiconductor field-effect transistor M2 in the second diode D2 negative pole and MOSFET and the protective circuit 9 meets phase terminal PHASE.
The parallel connection of metal oxide layer semiconductor field-effect transistor is connected in parallel in the circuit as M1 and M1 ', M2 and M2 ', M3 and M3 ', M4 and M4 ', M5 and M5 ', M6 and M6 ', sees Fig. 2.
Claims (2)
1. AC generator for vehicle rectifier circuit, a voltage regulator and a rectifier bridge, it is characterized in that, the sine wave that this circuit comprises phase voltage is that high side circuitry and negative string ripple are the circuit that low side circuitry is handled respectively, and high side circuitry comprises phase-detection, metal oxide layer semiconductor field-effect transistor drive circuit, charge pump, metal oxide layer semiconductor field-effect transistor and protective circuit thereof; Low side circuitry comprises phase-detection, metal oxide layer semiconductor field-effect transistor drive circuit, metal oxide layer semiconductor field-effect transistor and protective circuit thereof;
High side circuitry wherein:
The B+ end is connected with the drain electrode of the 4th diode cathode, the 5th diode cathode, the 4th voltage-stabiliser tube positive pole and the first metal oxide layer semiconductor field-effect transistor; The 4th diode cathode links to each other with the 17 resistance, the 17 resistance other end links to each other with the base stage of second electric capacity, the tenth resistance, the 11 resistance and the 4th triode, and the tenth resistance other end links to each other with the negative pole of the 5th diode with the 16 resistance, the 12 resistance and the 3rd electric capacity; The collector electrode of the 4th triode links to each other with the base stage of the 3rd diode, the 16 resistance other end and the 3rd triode, the collector electrode of the 3rd triode is connected with the 12 resistance other end, and its emitter connects the positive pole of the 3rd diode and an end of the 13 resistance; The other end of the 13 resistance joins with the 15 resistance, the 14 resistance respectively, the grid of another side joint the 4th electric capacity of the 15 resistance, the 18 resistance, the 7th diode cathode, the 3rd voltage-stabiliser tube and the first metal oxide layer semiconductor field-effect transistor; The 7th diode cathode links to each other with the 4th voltage-stabiliser tube negative pole; The emitter of the negative pole of the source electrode of the first metal oxide layer semiconductor field-effect transistor, the 3rd voltage-stabiliser tube, the 18 resistance other end, second electric capacity, the 3rd electric capacity, the 4th electric capacity other end and the 14 resistance, the 11 resistance other end, the 4th triode is connected with phase terminal PHASE;
Low side circuitry wherein:
B+ termination the 6th electric capacity, the second voltage-stabiliser tube negative pole, the 3rd resistance, the 7th resistance and first resistance; The 6th electric capacity is B+ end filter capacitor; Emitter, second resistance and first electric capacity of the source electrode of the other end of the 6th electric capacity and the first metal oxide layer semiconductor field-effect transistor, the first voltage-stabiliser tube negative pole, the 9th resistance, the 5th electric capacity, the 5th resistance, second triode link to each other; Second diode cathode connects the 8th resistance, the 8th resistance other end and the first electric capacity other end, the first resistance other end, the base stage of the second resistance other end and second triode links to each other, the collector electrode of second triode connects first diode cathode, the base stage of the 7th resistance opposite side and first triode, the collector electrode of first triode connects the 3rd resistance opposite side, first transistor emitter connects first diode cathode and the 4th resistance, the 4th resistance opposite side and the 5th resistance, the 6th resistance links to each other, another side joint the 5th electric capacity of the 6th resistance, the 9th resistance, the negative pole of first voltage-stabiliser tube, the grid of the negative pole of the 6th diode and the second metal oxide layer semiconductor field-effect transistor; The drain electrode of second diode cathode and the second metal oxide layer semiconductor field-effect transistor meets phase terminal PHASE.
2. according to the said a kind of AC generator for vehicle rectifier circuit of claim 1, it is characterized in that the parallel connection of metal oxide layer semiconductor field-effect transistor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011100847902A CN102122895A (en) | 2011-04-06 | 2011-04-06 | Rectifier bridge circuit of automobile alternating-current (AC) generator |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011100847902A CN102122895A (en) | 2011-04-06 | 2011-04-06 | Rectifier bridge circuit of automobile alternating-current (AC) generator |
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| Publication Number | Publication Date |
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| CN102122895A true CN102122895A (en) | 2011-07-13 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011100847902A Pending CN102122895A (en) | 2011-04-06 | 2011-04-06 | Rectifier bridge circuit of automobile alternating-current (AC) generator |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106787722A (en) * | 2016-12-28 | 2017-05-31 | 佛山市索尔电子实业有限公司 | Solar energy voltage stabilizing power supplying circuit |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1223499A (en) * | 1997-10-15 | 1999-07-21 | 瓦莱奥电机设备公司 | Synchronous rectifier device for alternator |
| EP1385260A1 (en) * | 2002-07-04 | 2004-01-28 | Valeo Equipements Electriques Moteur | Unit with controlled consumption for the command of power switches in a rectifier bridge supplying an alternator or a starter-alternator |
| US20100085023A1 (en) * | 2008-10-02 | 2010-04-08 | Hitachi Automotive Systems, Ltd. | Control Device for Automobile Battery-Charging Generator |
| CN201976025U (en) * | 2011-04-06 | 2011-09-14 | 锦州海伯伦汽车电子有限公司 | Rectification bridge circuit of alternating current generator of car |
-
2011
- 2011-04-06 CN CN2011100847902A patent/CN102122895A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1223499A (en) * | 1997-10-15 | 1999-07-21 | 瓦莱奥电机设备公司 | Synchronous rectifier device for alternator |
| EP1385260A1 (en) * | 2002-07-04 | 2004-01-28 | Valeo Equipements Electriques Moteur | Unit with controlled consumption for the command of power switches in a rectifier bridge supplying an alternator or a starter-alternator |
| US20100085023A1 (en) * | 2008-10-02 | 2010-04-08 | Hitachi Automotive Systems, Ltd. | Control Device for Automobile Battery-Charging Generator |
| CN201976025U (en) * | 2011-04-06 | 2011-09-14 | 锦州海伯伦汽车电子有限公司 | Rectification bridge circuit of alternating current generator of car |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106787722A (en) * | 2016-12-28 | 2017-05-31 | 佛山市索尔电子实业有限公司 | Solar energy voltage stabilizing power supplying circuit |
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Application publication date: 20110713 |