CN203205871U - Direct current reverse protection circuit - Google Patents
Direct current reverse protection circuit Download PDFInfo
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- CN203205871U CN203205871U CN 201320124042 CN201320124042U CN203205871U CN 203205871 U CN203205871 U CN 203205871U CN 201320124042 CN201320124042 CN 201320124042 CN 201320124042 U CN201320124042 U CN 201320124042U CN 203205871 U CN203205871 U CN 203205871U
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- 230000001681 protective effect Effects 0.000 claims description 21
- 230000005669 field effect Effects 0.000 abstract 2
- 229910044991 metal oxide Inorganic materials 0.000 abstract 2
- 150000004706 metal oxides Chemical class 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 2
- 238000010586 diagram Methods 0.000 description 4
- 238000009434 installation Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005422 blasting Methods 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- NHDHVHZZCFYRSB-UHFFFAOYSA-N pyriproxyfen Chemical compound C=1C=CC=NC=1OC(C)COC(C=C1)=CC=C1OC1=CC=CC=C1 NHDHVHZZCFYRSB-UHFFFAOYSA-N 0.000 description 1
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Abstract
The utility model provides a direct current reverse protection circuit which is used for being coupled between a direct current power supply and an output load. A direct current power supply is provided with an input positive electrode end and an input negative electrode end. The output load is provided with an output positive electrode end and an output negative electrode end, and the input positive electrode end is connected with the output positive electrode end. The direct current reverse protection circuit comprises an N type power metal oxide semiconductor field effect transistor, a first resistor and a second resistor. The N type power metal oxide semiconductor field effect transistor is provided with a gate electrode, a drain electrode and a source electrode. The drain electrode is connected with the input negative electrode end, and the source electrode is connected with the output negative electrode end. The first resistor is connected between the gate electrode and the input positive electrode end, and the second resistor is connected between the gate electrode and the output negative electrode end. The direct current reverse protection circuit provided by the utility model has the advantages of low energy loss and wide input voltage range.
Description
Technical field
This creation relates to a kind of DC converting circuit, and particularly relevant for a kind of direct current reverse protective circuit.
Background technology
DC-DC converting circuit (DC to DC Converter) is to utilize switch type framework (switching mode) and any DC input voitage can be converted to the stable output of specific VD.In general, this change-over circuit has been widely used in automobile-used system, exports electronic installation to obtain the DC power supply input from vehicle.
Because direct-current input power supplying has the polarity problems of positive and negative terminal, if the reversal connection input power then probably has the electronic installation of the damage facts, even the doubt of blasting is arranged, so prior art all can the design protection circuit, to avoid occuring the above-mentioned facts.
Fig. 1 is the schematic diagram of known a kind of direct current reverse protective circuit.Please refer to Fig. 1; known direct current reverse protective circuit 100 can be used for being coupled between DC power supply (not illustrating) and the output loading (not illustrating); wherein DC power supply has input positive terminal IP and input negative pole end IN; and output loading has output cathode end OP and output negative pole end ON, and input negative pole end IN connects output negative pole end ON.
Direct current reverse protective circuit 100 mainly is comprised of diode 110, and wherein the positive pole of diode 110 connects input positive terminal IP, and the negative pole of diode 110 connects output cathode end OP.When the DC power supply exact connect ion, diode 110 is understood forward bias voltage drop and conducting, so that DC power supply is transmitted electric energy to output loading.But when the DC power supply Opposite direction connection, diode 110 can can't conducting because of the meeting reverse bias, so that electric energy can't transmit to protect the electronic installation of rear end.
Yet in the situation that forward conducting, diode 100 generally can produce the pressure drop of 0.4V～1V and cause P
LossThe consume of=VI.Particularly under the operating load of large electric current, forward increases along with size of current in the loss meeting of diode 100, and its power loss more than the grade, causes the power utilization rate to decline to a great extent about watt (W).
In addition, the energy transform into heat energy kenel is understood in aforementioned electric energy loss usually, therefore need the additional configuration radiator structure to guarantee the part normal operation, can increase again thus volume and the cost of system, and causing can't miniaturization and reduction cost.
Summary of the invention
In view of this, the purpose of this creation provides a kind of direct current reverse protective circuit, be used for being coupled between a direct current power supply and the output loading, it is characterized in that this DC power supply has an input positive terminal and an input negative pole end, this output loading has an output cathode end and an output negative pole end, this input positive terminal connects this output cathode end, this direct current reverse protective circuit comprises: a N-type power MOSFET transistor, have a grid, drain electrode and an one source pole, and should drain electrode connect this input negative pole end, and this source electrode connects this output negative pole end; One first resistance is connected between this grid and this input positive terminal; And one second resistance, be connected between this grid and this output negative pole end.
In sum, in the direct current reverse protective circuit of this creation, the resistance between drain electrode and the source electrode compared to known diode, can significantly reduce electric energy loss P=I2R about milliohm (m Ω) grade, to promote the power utilization rate.
State with other objects, features and advantages and can become apparent on this creation for allowing, preferred embodiment cited below particularly, and cooperate appended graphicly, be described in detail below.
Description of drawings
Fig. 1 is the schematic diagram of known a kind of direct current reverse protective circuit.
Fig. 2 is for to create the schematic diagram of the direct current reverse protective circuit of an embodiment according to this.
[primary clustering symbol description]
IP: input positive terminal
IN: input negative pole end
OP: output cathode end
ON: output negative pole end
100: the direct current reverse protective circuit
110: diode
200: the direct current reverse protective circuit
210:N type power MOSFET transistor
220: the first resistance
230: the second resistance
240: electric capacity
D: drain electrode
G: grid
S: source electrode
Embodiment
Fig. 2 is for to create the schematic diagram of the direct current reverse protective circuit of an embodiment according to this.Please refer to Fig. 2, the direct current reverse protective circuit 200 of this creation is be used to being coupled between DC power supply (not illustrating) and the output loading (not illustrating), and wherein DC power supply is Vehicular battery for example, and output loading for example is the switch type direct current transducer.
DC power supply has input positive terminal IP and input negative pole end IN, and output loading has output cathode end OP and output negative pole end ON, and input positive terminal IP connects output cathode end OP.
Direct current reverse protective circuit 200 comprises N-type power MOSFET transistor 210, the first resistance 220 and the second resistance 230.N-type power MOSFET transistor 210 has grid G, drain D and source S, and drain D is to connect input negative pole end IN, and source S is to connect output negative pole end ON.The first resistance 220 is to be connected between grid G and the input positive terminal IP, and the second resistance 230 is to be connected between grid G and the output negative pole end ON.
When the DC power supply exact connect ion, voltage input can consist of current circuit by matrix diode (Body Diode) (not illustrating) conducting of drain D and source S inside, and the dividing potential drop that produces by the first resistance 220 and the second resistance 230 and trigger N-type power MOSFET transistor 210 and the formation current circuit.
But when the DC power supply Opposite direction connection; the reverse not conducting of matrix diode (BodyDiode) of drain D and source S inside; then electric energy is difficult to stride across drain D and source S is transmitted; the first resistance 220 and the second resistance 230 also can't produce dividing potential drop conducting N-type power MOSFET transistor 210, and reach the effect of reverse connection protection.
In addition, when consisting of the loop when the DC power supply exact connect ion, electric current can flow through drain D and the source S of N-type power MOSFET transistor 210 are because the equivalent resistance Rds (not illustrating) between drain D and the source S is only about milliohm (m Ω) grade, the electric energy P of its loss
Loss=I
2R is then about milliwatt (mW) below the grade.Only under the operating load of Guan Zaida electric current, the electric energy of the reverse protective circuit framework institute loss of this creation is used the energy-saving effect that reaches lifting power utilization rate still far below known diode circuit framework.
In the present embodiment, direct current reverse protective circuit 200 more can comprise electric capacity 240, and electric capacity 240 is connected between output cathode end OP and the output negative pole end ON, output loading is provided stable voltage.Electric capacity 240 for example is the electrochemical capacitor of high appearance value, but this creation does not limit the kind of electric capacity 240.
In addition, compared to P type power MOSFET transistor (not illustrating), N-type power MOSFET transistor 210 is the product for main flow specification on the market, not only withstand voltage, anti-traffic specification is all more complete, and applicable to various direct current input ranges, without limitation, and cost is also lower in the design.
Moreover, if with the framework of P type power MOSFET transistor, its input voltage depend on and the lock source electrode between withstand voltage Vgs, therefore only can input the voltage of 20V～30V, and can't apply on the circuit of high-line input voltage scope.But the framework of the N-type power MOSFET transistor 210 of this creation, its input voltage depend on and source-drain electrode between withstand voltage Vds, and between the source-drain electrode on the withstand voltage Vds voltage limit higher, therefore can do reverse protection in the input range of broadness.
In sum, the direct current reverse protective circuit of this creation has following advantages at least:
One, under the DC power supply exact connect ion, has low electric energy loss, and can significantly promote the power utilization rate.
Two, the design architecture of N-type power MOSFET transistor can have lower production cost, and can be used in the circuit design of high input voltage scope, and makes in the design comparatively elasticity.
Although this creation discloses as above with preferred embodiment; so it is not to limit this creation; anyly have the knack of this skill person; in the spirit and scope that do not break away from this creation; when can doing a little change and retouching, so the protection range of this creation attached claim person of defining after looking is as the criterion.
Claims (2)
1. direct current reverse protective circuit; be used for being coupled between a direct current power supply and the output loading; it is characterized in that this DC power supply has an input positive terminal and an input negative pole end; this output loading has an output cathode end and an output negative pole end; this input positive terminal connects this output cathode end, and this direct current reverse protective circuit comprises:
One N-type power MOSFET transistor has a grid, drain electrode and an one source pole, and should drain electrode connect this input negative pole end, and this source electrode connects this output negative pole end;
One first resistance is connected between this grid and this input positive terminal; And
One second resistance is connected between this grid and this output negative pole end.
2. direct current reverse protective circuit as claimed in claim 1 is characterized in that, wherein more comprise an electric capacity, and this electric capacity is connected between this output cathode end and this output negative pole end.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201320124042 CN203205871U (en) | 2013-03-07 | 2013-03-07 | Direct current reverse protection circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201320124042 CN203205871U (en) | 2013-03-07 | 2013-03-07 | Direct current reverse protection circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203205871U true CN203205871U (en) | 2013-09-18 |
Family
ID=49149939
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201320124042 Expired - Lifetime CN203205871U (en) | 2013-03-07 | 2013-03-07 | Direct current reverse protection circuit |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN203205871U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107579651A (en) * | 2016-07-04 | 2018-01-12 | 亚荣源科技（深圳）有限公司 | The leadage circuit of diode converse electrical leakage stream |
| CN112543547A (en) * | 2019-09-20 | 2021-03-23 | 日本电产东测株式会社 | Circuit board and electric oil pump |
-
2013
- 2013-03-07 CN CN 201320124042 patent/CN203205871U/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107579651A (en) * | 2016-07-04 | 2018-01-12 | 亚荣源科技（深圳）有限公司 | The leadage circuit of diode converse electrical leakage stream |
| CN112543547A (en) * | 2019-09-20 | 2021-03-23 | 日本电产东测株式会社 | Circuit board and electric oil pump |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20170525 Address after: Longgang District of Shenzhen City, Guangdong province 518000 Henggang Street Community Dakang Feng Wei Street No. 1 Building 1 to 5 Patentee after: YARUIYUAN TECHNOLOGY (SHENZHEN) CO.,LTD. Address before: Longgang District of Shenzhen City, Guangdong province 518115 Henggang Zhen Bao Ma Liu Cun Ma six road No. 10 1#, 2# building (Ya Rongyuan) Patentee before: YARONGYUAN TECHNOLOGY (SHENZHEN) Co.,Ltd. |
|
| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20130918 |