CN102122794A - Electrically pumped random laser based on zinc titanite particle doped zinc oxide film - Google Patents
Electrically pumped random laser based on zinc titanite particle doped zinc oxide film Download PDFInfo
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- CN102122794A CN102122794A CN 201110025002 CN201110025002A CN102122794A CN 102122794 A CN102122794 A CN 102122794A CN 201110025002 CN201110025002 CN 201110025002 CN 201110025002 A CN201110025002 A CN 201110025002A CN 102122794 A CN102122794 A CN 102122794A
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- random laser
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Abstract
The invention discloses an electrically pumped random laser based on a zinc titanite particle doped zinc oxide film, comprising a substrate and a ZnO film arranged on the substrate. The ZnO film is doped with Zn2TiO4 nanometer particles. In comparison with an electrically pumped random laser based on a simple zinc oxide film, the threshold current of the electrically pumped random laser based on the zinc titanite particle doped zinc oxide film is remarkably reduced.
Description
Technical field
The present invention relates to field of optoelectronic devices, relate in particular to a kind of electric pumping random laser based on the zinc-oxide film that mixes the zinc titanate particle.
Background technology
Wide bandgap semiconductor ZnO (energy gap is 3.37eV under the room temperature) has direct band gap and high exciton bind energy (60meV, exciton is stable existence at room temperature), is expected to become the substitution material of GaN in short-wavelength light field of electronic devices acquisition extensive use.The ZnO polycrystal film has the high gain of light; It has high refractive index simultaneously, thereby the multiple scattering effect of light is remarkable.Therefore, the ZnO polycrystal film is the ideal material of preparation electric pumping ultraviolet accidental laser.2007, the seminar at applicant place has utilized Metal-oxide-semicondutor (MOS) structure to realize the electric pumping random laser (X.Y.Ma of ZnO polycrystal film, P.L.Chen, D.S.Li, Y.Y.Zhang, D.R.Yang, Electrically pumped ZnO film ultraviolet random lasers on siliconsubstrate.Appl.Phys.Lett.91,2007,251109).In this report, the threshold current of Random Laser is about 70mA.Further reducing threshold current is a major issue of electric pumping random laser field.
Summary of the invention
The invention provides a kind of based on mixing Zn
2TiO
4The electric pumping random laser of the ZnO film of nano particle can significantly reduce the threshold current of device.
A kind of based on mixing Zn
2TiO
4The electric pumping random laser of the ZnO film of nano particle comprises the ZnO film on substrate and the substrate, and described ZnO film is mixed with Zn
2TiO
4Nano particle.
Described Zn
2TiO
4The particle diameter of nano particle is 5～20nm.
The mol ratio of Ti and Zn is 1: 10～30 in the described ZnO film.
The present invention also provides a kind of preparation method of above-mentioned electric pumping random laser, comprising:
With the Zn target of inlaying simple metal Ti bar is target, utilizes dc reactive sputtering to mix Zn in the substrate face deposition
2TiO
4The ZnO film of nano particle, 600～800 ℃ of heating utilized sol-gel process to deposit SiO on ZnO film after 1～3 hour under oxygen atmosphere
2Film is at substrate back and SiO
2Sputtering sedimentation Au electrode on the film.
Described dc reactive sputtering power is 80～120W.
Described underlayer temperature is 200～400 ℃.
Described simple metal Ti bar account for the entire target face long-pending 1/8～1/20.
Beneficial effect of the present invention is: compare with the electric pumping random laser based on simple ZnO film, based on mixing Zn
2TiO
4The threshold current of the electric pumping random laser of the ZnO film of nano particle significantly reduces.
Description of drawings
Fig. 1 is the structural representation of electric pumping random laser of the present invention;
Fig. 2 mixes Zn among the embodiment 1
2TiO
4The high-resolution-ration transmission electric-lens photo of the ZnO film of nano particle, ZnO and Zn
2TiO
4Crystal grain in the drawings figure go out.
Fig. 3 is based on mixing Zn among the embodiment 1
2TiO
4The luminous spectrum of the electric pumping random laser of the ZnO film of nano particle under different electric currents, the mol ratio of Ti and Zn is about 1: 20 in the ZnO film, film 700 ℃ of heat treatment 2 hours under oxygen atmosphere;
Fig. 4 is based on the luminous spectrum of electric pumping random laser under different electric currents of simple ZnO film among the embodiment 1;
Fig. 5 is the Output optical power curve of two kinds of electric pumping random lasers under different electric currents among the embodiment 1, and curve 1 is corresponding to based on mixing Zn
2TiO
4(Ti: Zn=1: 20), curve 2 is corresponding to the electric pumping random laser based on simple ZnO film for the electric pumping random laser of the ZnO film of nano particle.
Fig. 6 is based on mixing Zn among the embodiment 2
2TiO
4The luminous spectrum of the electric pumping random laser of the ZnO film of nano particle under different electric currents, the mol ratio of Ti and Zn is about 1: 30 in the ZnO film, film 800 ℃ of heat treatment 3 hours under oxygen atmosphere;
Embodiment
As shown in Figure 1: a kind of electric pumping random laser, comprise the substrate of making by N type silicon chip 1, substrate face deposits luminescent layer 2, and this luminescent layer 2 is for mixing Zn
2TiO
4The ZnO film of nano particle, luminescent layer deposit barrier layer 3, and barrier layer 3 is SiO
2Film, the barrier layer 3 and substrate 1 back side deposit gold thin film 4 and the gold thin film 5 that thickness is about 20nm and 100nm respectively, as the electrode of device.This device can prepare by the following method.
1) getting resistivity is that 0.005 ohmcm, size are 15 * 15mm
2, thickness is 675 microns N type＜100 silicon chip, put into the reative cell of sputter equipment after the cleaning, the reative cell vacuum is evacuated to 5 * 10
-3Pa; Pass to O
2With Ar mist, O
2With the flow-rate ratio of Ar be 1: 2, operating pressure is 8Pa; On silicon chip, utilize the method for dc reactive sputtering to deposit the thick simple ZnO film of about 180nm and mix Zn
2TiO
4[annotate: when the sputter ZnO film, employing purity is 99.99% Zn target to the ZnO film of nano particle; Mix Zn in sputter
2TiO
4During the ZnO film of nano particle, adopt and inlay the Zn target of simple metal Ti bar (purity is 99.99%), the area of Ti bar account for whole target sputter face long-pending 1/8], sputtering power is 100W, 300 ℃ of underlayer temperatures.The film that sputter obtains under oxygen atmosphere in 700 ℃ of heat treatments 2 hours;
2) utilize sol-gel process on above-mentioned two kinds of ZnO films, to deposit SiO
2Film, concrete steps are as follows: configuration tetraethoxysilane (TEOS): the precursor solution of ethanol (EtOH)=1: 10 (mol ratio), and the HCl that adds trace stirs after 2 hours, as SiO as catalyst
2Precursor sol.At the speed spin coating one deck SiO of above-mentioned two kinds of ZnO films with 3000 revolutions per seconds
2The precursor sol film, then, in air, formed SiO in 1 hour at last in 550 ℃ of heat treatments 100 ℃ of oven dry 20 minutes down
2Film;
3) at SiO
2The thick translucent Au electrode of the about 20nm of sputter on the film, at the thick Au electrode of silicon substrate back spatter deposition 100nm, above-mentioned both sides Au electrode all is the circle of diameter 10mm.
Observe the above-mentioned Zn that mixes through high-resolution-ration transmission electric-lens
2TiO
4The ZnO film of nano particle shows, Zn
2TiO
4The size of nano particle is (as shown in Figure 2) between 5-20nm.In addition, the electron spectrum test shows, the mol ratio of element ti and Zn is about 1: 20 in the film.
With the positive pole of the connection of the front surface A u electrode in above-mentioned two kinds of devices DC power supply, the Au electrode at the silicon substrate back side connects negative pole, tests the electroluminescent spectrum of two devices under different injection currents.As shown in Figure 3, Figure 4.Sharp peak in the spectrum is that the Random Laser by ZnO causes.To based on mixing Zn
2TiO
4The electric pumping random laser of the ZnO film of nano particle, when injection current reaches only for 6mA, (as shown in Figure 3) can take place in Random Laser, and for the electric pumping random laser based on simple ZnO film, when injection current need reach 18mA, (as shown in Figure 4) could take place in Random Laser.
Fig. 5 is the Output optical power curves of two kinds of electric pumping random lasers under different electric currents, can see: when injection current during greater than a certain threshold value, power output gets faster with current increases, and this is the characteristic feature of laser.Can also see in addition: based on mixing Zn
2TiO
4The threshold current of the electric pumping random laser of the ZnO film of nano particle is about 6mA, and is 18mA based on the threshold current of the electric pumping random laser of simple ZnO film.This result effectively illustrates and mix Zn in ZnO film
2TiO
4Nano particle can reduce the threshold current of electric pumping random laser significantly.
1) getting resistivity is that 0.005 ohmcm, size are 15 * 15mm
2, thickness is 675 microns N type＜100 silicon chip, put into the reative cell of sputter equipment after the cleaning, the reative cell vacuum is evacuated to 5 * 10
-3Pa; Pass to O
2With Ar mist, O
2With the flow-rate ratio of Ar be 1: 2, operating pressure is 8Pa; On silicon chip, utilize the about 180nm of method deposition of dc reactive sputtering thick mix Zn
2TiO
4The ZnO film of nano particle [annotate: adopt and inlay the Zn target of simple metal Ti bar (purity is 99.99%), the area of Ti bar account for whole target sputter face long-pending 1/20], sputtering power is 100W, 300 ℃ of underlayer temperatures.The film that sputter obtains under oxygen atmosphere in 800 ℃ of heat treatments 3 hours;
2) utilize sol-gel process at the above-mentioned Zn of mixing
2TiO
4Deposit SiO on the ZnO film of nano particle
2Film, concrete steps are as follows: configuration tetraethoxysilane (TEOS): the precursor solution of ethanol (EtOH)=1: 10 (mol ratio), and the HCl that adds trace stirs after 2 hours, as SiO as catalyst
2Precursor sol.At the speed spin coating one deck SiO of above-mentioned two kinds of ZnO films with 3000 revolutions per seconds
2The precursor sol film, then, in air, formed SiO in 1 hour at last in 550 ℃ of heat treatments 100 ℃ of oven dry 20 minutes down
2Film;
3) at SiO
2The thick translucent Au electrode of the about 20nm of sputter on the film, at the thick Au electrode of silicon substrate back spatter deposition 100nm, above-mentioned both sides Au electrode all is the circle of diameter 10mm.
Observe the above-mentioned Zn that mixes through high-resolution-ration transmission electric-lens
2TiO
4The ZnO film of nano particle shows, Zn
2TiO
4Close among the size of nano particle and the embodiment 1, between 5-20nm.In addition, the electron spectrum test shows, the mol ratio of element ti and Zn is about 1: 30 in the film.
With the positive pole of the connection of the front surface A u electrode in above-mentioned device DC power supply, the Au electrode at the silicon substrate back side connects negative pole, and the electroluminescent spectrum of test component under different injection currents is the reference device with the pure ZnO film device among the embodiment 1.As shown in Figure 6, when injection current reached only for 10mA, Random Laser can take place.And for the electric pumping random laser based on simple ZnO film, when injection current need reach 18mA, (as shown in Figure 6) could take place in Random Laser.The result shows, in ZnO film, mix Zn
2TiO
4Nano particle can reduce the threshold current of electric pumping random laser, works as Zn
2TiO
4When the incorporation of nano particle and heat-treat condition changed, the degree that the threshold current of electric pumping random laser reduces can change thereupon.
Claims (4)
1. one kind based on mixing Zn
2TiO
4The electric pumping random laser of the ZnO film of particle comprises the ZnO film on substrate and the substrate, it is characterized in that, described ZnO film is mixed with Zn
2TiO
4Nano particle.
2. electric pumping random laser according to claim 1 is characterized in that, described Zn
2TiO
4The particle diameter of nano particle is 5～20nm.
3. electric pumping random laser according to claim 1 is characterized in that, the mol ratio of Ti and Zn is 1: 10～30 in the described ZnO film.
4. the preparation method of the described electric pumping random laser of claim 1 comprises:
With the Zn target of inlaying simple metal Ti bar is target, utilizes dc reactive sputtering to mix Zn in the substrate face deposition
2TiO
4The ZnO film of nano particle, 600～800 ℃ of heating utilized sol-gel process to deposit SiO on ZnO film after 1～3 hour under oxygen atmosphere
2Film is at substrate back and SiO
2Sputtering sedimentation Au electrode on the film.
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030227951A1 (en) * | 2000-11-23 | 2003-12-11 | Rogers David J. | Electrically pumped, polycrystalline ZnO laser and a method of fabricating the same |
| CN101588021A (en) * | 2009-06-10 | 2009-11-25 | 浙江大学 | Electric pumping random laser of silicon zinc oxide nano-rod array |
-
2011
- 2011-01-24 CN CN 201110025002 patent/CN102122794A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030227951A1 (en) * | 2000-11-23 | 2003-12-11 | Rogers David J. | Electrically pumped, polycrystalline ZnO laser and a method of fabricating the same |
| CN101588021A (en) * | 2009-06-10 | 2009-11-25 | 浙江大学 | Electric pumping random laser of silicon zinc oxide nano-rod array |
Non-Patent Citations (4)
| Title |
|---|
| 《J Mater Sci: Mater Electron》 20070420 Sandra A, etc. Optical and structural properties of ZnO+Zn2TiO4 thin films prepared by the sol-gel method 1127-1130 1-4 第2007卷, 第18期 2 * |
| 《Materials Science and Engineering B》 20101231 Chun Feng Song, etc. Enhanced green emission in ZnO/zinc titanate composite materials 243-247 1-4 第2010卷, 第175期 2 * |
| 《Optics Express》 20090309 Peiliang Chen,etc Electrically pumped ultraviolet random lasing from ZnO-based metal-insulator-semiconductor devices: Dependence on carrier transport 4712-4717 1-4 第17卷, 第6期 2 * |
| 《Optics Express》 20090903 Xiangyang Ma, etc. Room temperature electrically pumped ultraviolet random lasing from ZnO nanorod arrays on Si 14426-14433 1-4 第17卷, 第16期 2 * |
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Application publication date: 20110713 |