CN102121944A - Microprobe structure and manufacturing method thereof - Google Patents
Microprobe structure and manufacturing method thereof Download PDFInfo
- Publication number
- CN102121944A CN102121944A CN2010100004292A CN201010000429A CN102121944A CN 102121944 A CN102121944 A CN 102121944A CN 2010100004292 A CN2010100004292 A CN 2010100004292A CN 201010000429 A CN201010000429 A CN 201010000429A CN 102121944 A CN102121944 A CN 102121944A
- Authority
- CN
- China
- Prior art keywords
- microprobe
- substrate
- horizontal
- columnar microstructure
- photoresistance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Abstract
The invention discloses a microprobe structure and a manufacturing method thereof. The microprobe structure is suitable for a probe card component used for test of an electronic component. The manufacturing method for the microprobe comprises that: a micro metal structure with over two layers is sequentially formed on the surface of a substrate with space conversion by lithography, electroplating, planarization and etching technologies of a semiconductor manufacture procedure and in a way that a macromolecule substitutes and electroplates a second sacrificial layer metal and then the microprobe structure of the micro metal structure with over two layers is obtained, wherein each layer of micro metal structure is made of one material and the micro metal structure with over two layers can be made of the same material and/or different materials. The microprobe structure manufactured by the manufacturing method has a structural design of a reinforced cantilever, is suitable for a component used for test of various electronic components, and can serve as a test head of a probe card to effectively increase test bandwidth, reduce space and improve parallel test capability.
Description
Technical field
The present invention relates to a kind of probe structure and manufacture method thereof, relate in particular to a kind of microprobe structure and manufacture method thereof that is applicable to the probe card assembly that electronic assembly test is used.
Background technology
Probe is to be applied in integrated circuit (IC) as yet before the encapsulation, and naked crystalline substance is done function test with probe (probe), uses to filter out defective products, the encapsulation engineering after carrying out again.Therefore, be in the integrated circuit manufacturing manufacturing cost to be influenced sizable critical processes.In brief, probe is the interface between a tester table and wafer, each integrated circuit (IC) needs the corresponding probe of a slice at least, and the purpose of test is after making wafer cutting, allows non-defective unit will enter next encapsulation procedure and avoids defective products is continued processing and causes waste.Therefore, high-reliability is to judge the considerable index of probe manufacturing merchant's competitive power.
The technology that is adopted traditionally, it as the patent No. disclosed epoxy resin ring type probe (epoxy ring probe card) in 4,757,256 the United States Patent (USP), because of this class has advantage a small amount of, various and that elasticity is made, be still the extensive receptible technology of industry so far.The manufacture of this type of probe is to assemble probe in the mode of manually putting by root, so, this kind mode will limit number of probes can not grow up, also be not suitable for being applied in the test of polycrystalline grain again, for example, the DARM test, and only be useful in low pin number, low pin number test, and for example, logic IC (Logic IC).Again, the oversize approximate number millimeter of probe circuitry, the about 200MHz of frequency range restriction, and this is for the about 1GHz of the needed frequency range of futurity industry circle, obviously can't be suitable for.
In the patent No. is 6,072, in 190 the United States Patent (USP), disclose a kind of probe, its probe is to put with semi-girder (cantilever beam) formula, little contact structures are positioned at the semi-girder leading edge, (pyramid structure) and its probe material are silicon to be pyramid structure, and the electric signal connected mode is that the side at semi-girder deposits a conductive film to connect testing component and detecting device.So, well-known, silicon is a hard brittle material, and its strength of materials in particular crystal plane is weak, frequency of exposure (touch-downnumber) will be lower; Its electrical signal only depends on a film to transmit and will cause impedance to improve again, and load is easy to too high and short circuit.In brief, this class probe fiduciary level can't meet the demand of industry member.
In the patent No. is that 5,476,211 the United States Patent (USP) and the patent No. are 5,926, in 951 the United States Patent (USP), disclose the manufacture method of a micromodule spring interconnecting assembly, right, this class probe difficulty is born lateral stress, and the Microspring interconnecting assembly is longer, thereby, be unsuitable for high-frequency test.
Again, in the patent No. is in the United States Patent (USP) of 2007/0024298A1, the micro-elasticity probe (torsion spring probe) of one tool torsion characteristic is proposed, and each probe design one little torque arm (torsionbar) uses and overcomes lateral stress, and so this will limit this class probe thin space developing ability.
In addition, in the invention bulletin/publication number I279556 of TaiWan, China patent gazette, propose its little ladder semi-girder design of a micro-elasticity contactor and can strengthen the microprobe force-bearing situation, but when the shared area of its second sacrifice layer metal is quite big, the residual stress that must reduce plating as far as possible and caused, otherwise this class probe intensity is reduced.
So how to seek a kind of microprobe structure and manufacture method thereof, the probe card assembly of using applicable to electronic assembly test, can solve present high-performance electric device (for example, VLSI, ULSI circuit) when circuit test, required high performance microprobe (probe) problem; In addition, how to seek to utilize a kind of microprobe making process, can be to produce the microprobe structure in order to measuring head as probe, can be applicable to the assembly that all kinds of electronic assembly tests are used, as the naked brilliant test (baretesting) of semiconductor subassembly, test suite such as the test of the burn in process of package assembling (burn-in), printed circuit board (PCB) and burn in process, or, be applied in the coupling arrangement of electronic package, as the lead-in wire and the encapsulation of semiconductor subassembly; And, as this microprobe structure that the measuring head of probe is used, can effectively increase the test frequency range, dwindle spacing and promote power of test side by side, all are problems to be solved.
Summary of the invention
Fundamental purpose of the present invention is to be to provide a kind of microprobe structure and manufacture method thereof, be applicable to the probe card assembly that electronic assembly test is used, microprobe structure of the present invention and manufacture method thereof are utilized little shadow, plating, planarization, the etching technique of manufacture of semiconductor, and replace the plating second sacrifice layer metal with macromolecule.
Another purpose of the present invention is to be to provide a kind of microprobe structure and manufacture method thereof, be applicable to the probe card assembly that electronic assembly test is used, the microprobe structure of utilizing microprobe making process of the present invention to make, has the structural design of strengthening semi-girder, be applicable to the assembly that all kinds of electronic assembly tests are used, can be in order to measuring head as probe.
A further object of the present invention is to be to provide a kind of microprobe structure and manufacture method thereof, be applicable to the probe card assembly that electronic assembly test is used, the microprobe structure of utilizing microprobe making process of the present invention to make can effectively increase the test frequency range, dwindle spacing and promote power of test side by side.
Another object of the present invention is to be to provide a kind of microprobe structure and manufacture method thereof, be applicable to the probe card assembly that electronic assembly test is used, the microprobe structure of utilizing microprobe making process of the present invention to make, the assembly of using applicable to all kinds of electronic assembly tests, as the naked brilliant test (bare testing) of semiconductor subassembly, test suite such as the test of the burn in process of package assembling (burn-in), printed circuit board (PCB) and burn in process, or, be applied in the coupling arrangement of electronic package, as the lead-in wire and the encapsulation of semiconductor subassembly.
Another object of the present invention is to be to provide a kind of microprobe structure and manufacture method thereof, be applicable to the probe card assembly that electronic assembly test is used, the microprobe structure of utilizing microprobe making process of the present invention to make is applicable to the naked brilliant microprobe of testing the probe (probe card) of usefulness of semiconductor subassembly.
According to the purpose of the above, the step that microprobe making process of the present invention comprises is at first, to prepare one and have the substrate of space conversion (space transformer), so that carry out follow-up microprobe structure formation on this substrate; Then, utilize little shadow, plating, planarization, the etching technique of manufacture of semiconductor, and replace with macromolecule and to electroplate the second sacrifice layer metal, on this substrate surface, form the little metal construction that has more than two layers in succession, at this, the little metal construction of each layer is made up of a kind of material, and this little metal construction more than two layers can be formed by same material and/or by different materials; Then, remove other material beyond this little metal construction more than two layers with liquid or dry ecthing, at this, this liquid or dry ecthing can this little metal constructions more than two layers of etching; At last, in obtaining good microprobe structure on the substrate with this little metal construction more than two layers.
The present invention also provides a kind of microprobe structure, is applicable to the probe card assembly that electronic assembly test is used, and this microprobe structure comprises:
At least more than one columnar microstructure, this at least more than one columnar microstructure are formed at one to have on the surface of substrate of space conversion;
The horizontal boom beam forms this horizontal boom beam on this at least more than one the columnar microstructure in each;
Probe base forms this probe base on each this horizontal boom beam; And
Microprobe forms this microprobe on each this probe base;
Wherein, this at least more than one this columnar microstructure, this horizontal boom beam, this probe base, this microprobe form on this surface of this substrate in succession, and, remove other material beyond this at least more than one this columnar microstructure, this horizontal boom beam, this probe base, this microprobe with liquid and/or dry ecthing, this liquid and/or this dry ecthing can this microprobe structures of etching.
The present invention provides a kind of microprobe structure again, is applicable to the probe card assembly that electronic assembly test is used, and this microprobe structure comprises:
At least more than one columnar microstructure, this at least more than one columnar microstructure are formed at one to have on the surface of substrate of space conversion;
At least more than one horizontal beam forms each this at least more than one horizontal beam on this at least more than one the columnar microstructure in each;
The horizontal boom beam forms this horizontal boom beam on this at least more than one the horizontal beam in each;
Probe base forms this probe base on each this horizontal boom beam; And
Microprobe forms this microprobe on each this probe base;
Wherein, this at least more than one this columnar microstructure, this at least more than one horizontal beam, this horizontal boom beam, this probe base, this microprobe form on this surface of this substrate in succession, and, remove other material beyond this at least more than one this columnar microstructure, this at least more than one horizontal beam, this horizontal boom beam, this probe base, this microprobe with liquid and/or dry ecthing, this liquid and/or this dry ecthing can this microprobe structures of etching.
The present invention provides a kind of microprobe structure again, is applicable to the probe card assembly that electronic assembly test is used, and this microprobe structure comprises:
At least more than one columnar microstructure, this at least more than one columnar microstructure are formed at one to have on the surface of substrate of space conversion;
The horizontal boom beam forms this horizontal boom beam on this at least more than one the columnar microstructure in each;
At least more than one horizontal beam forms each this at least more than one horizontal beam on each this horizontal boom beam;
Probe base forms this probe base on each this horizontal boom beam; And
Microprobe forms this microprobe on each this probe base;
Wherein, this at least more than one this columnar microstructure, this horizontal boom beam, this at least more than one horizontal beam, this probe base, this microprobe form on this surface of this substrate in succession, and, remove other material beyond this at least more than one this columnar microstructure, this horizontal boom beam, this at least more than one horizontal beam, this probe base, this microprobe with liquid and/or dry ecthing, this liquid and/or this dry ecthing can this microprobe structures of etching.
Microprobe structure of the present invention and manufacture method thereof are utilized little shadow of manufacture of semiconductor, electroplate, planarization, etching technique, and replace with macromolecule and to electroplate the second sacrifice layer metal, have on the substrate surface of space conversion in one, form the little metal construction that has more than two layers in succession, use the microprobe structure that obtains having this little metal construction more than two layers, and the microprobe structure of utilizing microprobe making process of the present invention to make, has the structural design of strengthening semi-girder, be applicable to the assembly that all kinds of electronic assembly tests are used, can be in order to measuring head as probe.
Description of drawings
Fig. 1 is a process flow diagram, in order to the process step of explicit declaration microprobe structure making process of the present invention;
Fig. 2 is a process flow diagram, in order to the detailed process program of the step of preparation one substrate of explicit declaration in Fig. 1;
Fig. 3 is a process flow diagram, in order to explicit declaration in Fig. 1 in the detailed process program of the step that forms the microprobe structure more than two layers on the surface of this substrate in succession;
Fig. 4 is a process flow diagram, removes the detailed process program of the step of other material this microprobe structure two layer or more beyond with liquid or dry ecthing in order to explicit declaration in Fig. 1;
Fig. 5 is a process flow diagram, utilizes an embodiment of microprobe making process of the present invention in order to explicit declaration, to produce the process step of a microprobe structure of the present invention;
Fig. 6-a to Fig. 6-g is a synoptic diagram, in order to the embodiment that utilize of the present invention microprobe making process of explicit declaration in Fig. 5, with the processing procedure situation of the process step that produces a microprobe structure of the present invention;
Fig. 7 is a process flow diagram, utilizes another embodiment of microprobe making process of the present invention in order to explicit declaration, to produce the process step of another microprobe structure of the present invention;
Fig. 8-a to Fig. 8-h is a synoptic diagram, in order to explicit declaration another embodiment that utilizes microprobe making process of the present invention in Fig. 7, with the processing procedure situation of the process step that produces another microprobe structure of the present invention;
Fig. 9-a is a synoptic diagram, utilizes the formed another microprobe structure of microprobe structure making process of the present invention in order to explicit declaration;
Fig. 9-b is a synoptic diagram, utilizes the formed microprobe structure again of microprobe structure making process of the present invention in order to explicit declaration;
Fig. 9-c is a synoptic diagram, utilizes the formed another microprobe structure of microprobe structure making process of the present invention in order to explicit declaration;
Fig. 9-d is a synoptic diagram, utilizes formed another microprobe structure of microprobe structure making process of the present invention in order to explicit declaration;
Figure 10 is a synoptic diagram, utilizes the formed microprobe structure again of microprobe structure making process of the present invention in order to explicit declaration;
Figure 11-a is a synoptic diagram, utilizes formed another microprobe structure of microprobe structure making process of the present invention in order to explicit declaration;
Figure 11-b is a synoptic diagram, utilizes the formed another microprobe structure of microprobe structure making process of the present invention in order to explicit declaration; And
Figure 11-c is a synoptic diagram, utilizes the formed microprobe structure again of microprobe structure making process of the present invention in order to explicit declaration.
Embodiment
Those skilled in the art below cooperate Figure of description that embodiments of the present invention are done more detailed description, so that can implement after studying this instructions carefully according to this.
Fig. 1 is a process flow diagram, in order to the process step of explicit declaration microprobe structure making process of the present invention.As shown in fig. 1 be microprobe structure making process of the present invention, at first,, prepare a substrate with space conversion in step 11 form so that carry out follow-up microprobe structure on this substrate, and enter step 12.
In step 12, utilize little shadow, plating, planarization, the etching technique of manufacture of semiconductor, and replace with macromolecule and to electroplate the second sacrifice layer metal, in the little metal construction that forms in succession on the surface of this substrate more than two layers, at this, the little metal construction of each layer is made up of a kind of material, and this little metal construction more than two layers can be formed by same material and/or by different materials, and enters step 13.
In step 13, remove other material beyond this little metal construction more than two layers with liquid or dry ecthing, at this, this liquid or dry ecthing can this little metal constructions more than two layers of etching, and enter step 14.
In step 14, in obtaining good microprobe structure on the substrate with the little metal construction more than two layers.
Fig. 2 is a process flow diagram, in order to the detailed process program of the step of preparation one substrate of explicit declaration in Fig. 1.As shown in Figure 2, at first, in step 111, choose a substrate with space conversion (spacetransformer), this substrate possesses to be had contact mat (contact pad) rerouting (distribution), the function of fine same flatness (co-planner) is amplified and provided to spacing, and can form the corresponding contact pad in opposed surface, this substrate is chosen from ceramic substrate, silicon substrate, glass substrate or FR-4 substrate etc., at this, ceramic substrate can be multilayer ceramic substrate (multi-layer ceramicssubstrate, MLC), low-temperature co-fired ceramic substrate (low temperature co-fired ceramicssubstrate, LTCC) or High Temperature Co Fired Ceramic substrate (high temperature co-fired ceramicssubstrate, and enter step 112 HTCC).
In step 112, on this substrate, deposit Seed Layer (seed layer), at this, this Seed Layer is for electroplating initial layers, need good electrical conductivity and and substrate between tack, general optional Cr/Au (Cr under Au), Ti/Au (Ti under Au), Ti/Cu (Ti under Cu) or the Ti-W/Au (Ti-W under Au) of taking from, with Cr/Au or Ti/Au is example, the about 100-200A of Cr, the about 1000-2000A of Au, in addition, the technology of deposition is chosen from evaporation (evaporation), sputter (Sputtering), electroless plating (electroless) etc.; After step 112 is finished, and enter step 12.
Fig. 3 is a process flow diagram, in order to explicit declaration in Fig. 1 in the detailed process program of the step that forms the little metal construction more than two layers on the surface of this substrate in succession.By the step among Fig. 3 as can be known, microprobe structure making process of the present invention utilizes little shadow, plating, planarization, the etching technique of manufacture of semiconductor, and replaces the plating second sacrifice layer metal with macromolecule.As shown in Figure 3, at first, in step 121, on this substrate, batch cover photoresistance and/or hard waxes and/or high molecular polymer, look closely the actual embodiment situation and decide, at this, batch covering photoresistance can adopt suitable technology according to the photoresistance characteristic, and spin coating, spray coating, lamination, casting etc. are arranged, and photoresistance can be eurymeric, as Clariant AZ4620, TOK LA900, PMMA, and photoresistance can be minus, as JSR THB-126N, MicroChem SU-8 etc.; After step 121 is finished, and enter step 122.
In step 122, carry out the photoresistance baking, photoresistance is after baking, wherein solvent evaporation makes the photoresistance hardening, expose afterwards, develop, with the required micro structured pattern (pattern) that is shaped, wherein, baking method has heating plate directly to heat (direct backing by hot plate), baking oven (Oven) or infrared ray heating (IR backing) etc., and Exposure mode has X-ray lithography, UV lithography, direct write e-beam etc.; After step 122 is finished, and enter step 123.
In step 123, in the micro structured pattern pothole, electroplate required metal construction, optional Au, Cu, Ni, Ni-Mn alloy, Ni-Fe alloy, Ni-Co alloy, the Sn-Pb etc. of taking from of metal of general electrodepositable; After step 123 is finished, and enter step 124.
In step 124, carry out planarization, attrition process will make photoresistance thickness and plated metal consistency of thickness, wherein, the attrition process mode is chosen from chemical machine processing (Chemical mechanicalpolishing, CMP), mechanical lapping (mechanical lapping), polishing (polishing) etc., and enter step 125.
In step 125, repeating step 121 is to step 124, is used to form on the surface of this substrate the little metal construction more than two layers.
Fig. 4 is a process flow diagram, removes the detailed process program of the step of other material this little metal construction two layer or more beyond with liquid or dry ecthing in order to explicit declaration in Fig. 1.As shown in Figure 4,, remove photoresistance and/or hard waxes and/or high molecular polymer, in order to disengaging this little metal construction more than two layers, and enter step 132 with solvent or dry ecthing in step 131.
In step 132, remove Seed Layer with etching solution, and enter step 14.
Fig. 5 is a process flow diagram, utilizes an embodiment of microprobe structure making process of the present invention in order to explicit declaration, to produce the process step of a microprobe structure of the present invention.By the step among Fig. 5 as can be known, microprobe structure making process of the present invention utilizes little shadow, plating, planarization, the etching technique of manufacture of semiconductor, and replaces the plating second sacrifice layer metal with macromolecule.As shown in Figure 5, and see also the synoptic diagram of Fig. 6-a to Fig. 6-g, at first, in step 21, choose a substrate 200 with space conversion (space transformer), this substrate 200 possesses to be had contact mat (contact pad) rerouting (distribution), the function of fine same flatness (co-planner) is amplified and provided to spacing, and can form the corresponding contact pad in opposed surface, this substrate 200 is chosen from ceramic substrate, silicon substrate, glass substrate or FR-4 substrate etc., at this, ceramic substrate can be multilayer ceramic substrate (multi-layer ceramics substrate, MLC), low-temperature co-fired ceramic substrate (lowtemperature co-fired ceramics substrate, LTCC) or the High Temperature Co Fired Ceramic substrate (hightemperature co-fired ceramics substrate, HTCC); On this substrate 200, deposit Seed Layer (seed layer) 201, at this, this Seed Layer 201 is for electroplating initial layers, need good electrical conductivity and and the tack of 200 of substrates, the general optional Cr/Au (Cr under Au) that takes from, Ti/Au (Ti under Au), Ti/Cu (Ti under Cu) or Ti-W/Au (Ti-W under Au), with Cr/Au or Ti/Au is example, the about 100-200A of Cr, the about 1000-2000A of Au, in addition, the technology of deposition is chosen from evaporation (evaporation), sputter (Sputtering), electroless plating (electroless) etc., present embodiment is example with the sputter, the processing procedure of step 21 and enters step 22 as shown in Fig. 6-a.
In step 22, cover photoresistance 202 prior to criticizing on this substrate, the photoresistance that covers of criticizing can be chosen from spin coating, spray coating, lamination, casting etc. according to the appropriate technology that the photoresistance characteristic adopted; Photoresistance can be eurymeric, as Clariant AZ4620, TOK LA900, PMMA, and, photoresistance can be minus such as JSR THB-126N, MicroChem SU-8 etc., can select suitable photoresistance according to product performance, follow-uply must carry out the attrition process processing procedure because of of the present invention, thereby, in present embodiment, adopt the higher epoxy-base photoresist/Su-8 of structural strength and cover photoresistance 202, launch to help successive process with next batch of rotary coating (spincoating); Then, carry out 202 bakings of ground floor photoresistance, after baking, wherein solvent evaporation makes 202 hardening of ground floor photoresistance, expose afterwards, develop, with the ground floor photoresistance microstructure 204 that is shaped required, wherein, baking method has directly heating of heating plate, baking oven or infrared ray heating etc., Exposure mode has X-ray lithography, UVlithography, direct write e-beam etc., and present embodiment is an example with hot plate backing/UVexposure, and the processing procedure of step 22 is as shown in Fig. 6-b, after step 22 is finished, and enter step 23.
In step 23, in ground floor photoresistance microstructure 204 pattern potholes, electroplate required metal 205 structures, metal 205 optional Au, Cu, Ni, Ni-Mn alloy, Ni-Fealloy, Ni-Co alloy, the Sn-Pb etc. of taking from of general electrodepositable, the processing procedure of step 23 and enters step 24 as shown in Fig. 6-c.
In step 24, carry out planarization, attrition process to be obtaining ground floor metal micro structure 206, and attrition process will make photoresistance 202 and plated metal 205 consistency of thickness, and wherein, the attrition process mode is chosen from chemical machine processing (CMP), mechanical lapping, polishing etc.; In addition, photoresistance should adopt tool high mechanical properties epoxy-base photoresist such as MicroChem Su-8, and the processing procedure of step 24 and enters step 25 as shown in Fig. 6-d.
In step 25, repeating step 22 is to step 24, in light resistance structure 203 and on the surface of this substrate 200, the microprobe structure 218 that formation is comprised columnar microstructure 101, horizontal boom beam 102,103 probe bases and microprobe 104 more than at least 1, at this, microprobe structure 218 is microprobe array (micro probe array) pattern; Microprobe structure 218 comprises the columnar microstructure 101 more than at least 1, horizontal boom beam 102, probe base 103, and microprobe 104, wherein, this columnar microstructure 101 more than at least 1 is in its following contact mat (contact pad) of connection substrate 200 (not shown go out), this horizontal boom beam 102 in order to provide enough on, following deflection, with compensation probe (not shown go out), plane error between tester table (not shown go out), but this columnar microstructure 101 is than the width of the structure plan of horizontal boom beam 102, length is little, therefore, before electroplating little horizontal boom beam 102, should deposit one deck again and electroplate initial layers (not shown go out); The processing procedure of step 25 and enters step 26 as shown in Fig. 6-e.
In step 26, remove light resistance structure 203 with solvent (not shown go out) or dry ecthing (not shown go out), in order to disengage the microprobe structure 218 of the columnar microstructure 101, horizontal boom beam 102, probe base 103 and the microprobe 104 that comprise more than at least 1, the processing procedure of step 26 and enters step 27 as shown in Fig. 6-f.
In step 27, remove not the Seed Layer that covered by the columnar microstructure more than at least 1 101, horizontal boom beam 102, probe base 103 and microprobe 104 partly 219 with etching solution (not shown go out), to obtain good microprobe structure 218 on substrate 200, the processing procedure of step 27 is as shown in Fig. 6-g.
Fig. 6-a to Fig. 6-g is a synoptic diagram, in order to the embodiment that utilize of the present invention microprobe making process of explicit declaration in Fig. 5, with the processing procedure situation of the process step that produces a microprobe structure of the present invention.
Fig. 7 is a process flow diagram, utilizes another embodiment of microprobe making process of the present invention in order to explicit declaration, to produce the process step of another microprobe structure of the present invention.By the step among Fig. 7 as can be known, microprobe structure making process of the present invention utilizes little shadow, plating, planarization, the etching technique of manufacture of semiconductor, and replaces the plating second sacrifice layer metal with macromolecule.As shown in Figure 7, and see also the synoptic diagram of Fig. 8-a to Fig. 8-h, at first, in step 31, choose a substrate 300 with space conversion (space transformer), this substrate 300 possesses to be had contact mat (contact pad) rerouting (distribution), the function of fine same flatness (co-planner) is amplified and provided to spacing, and can form the corresponding contact pad in opposed surface, this substrate 300 is chosen from ceramic substrate, silicon substrate, glass substrate or FR-4 substrate etc., at this, ceramic substrate can be multilayer ceramic substrate (multi-layer ceramics substrate, MLC), low-temperature co-fired ceramic substrate (lowtemperature co-fired ceramics substrate, LTCC) or the High Temperature Co Fired Ceramic substrate (hightemperature co-fired ceramics substrate, HTCC); On this substrate 300, deposit Seed Layer (seed layer) 301, at this, this Seed Layer 301 is for electroplating initial layers, need good electrical conductivity and and the tack of 300 of substrates, the general optional Cr/Au (Cr under Au) that takes from, Ti/Au (Ti under Au), Ti/Cu (Ti under Cu) or Ti-W/Au (Ti-W under Au), with Cr/Au or Ti/Au is example, the about 100-200A of Cr, the about 1000-2000A of Au, in addition, the technology of deposition is chosen from evaporation (evaporation), sputter (Sputtering), electroless plating (electroless) etc., present embodiment is example with the sputter, the processing procedure of step 31 and enters step 32 as shown in Fig. 8-a.
In step 32, cover photoresistance 302 prior to criticizing on this substrate, the photoresistance that covers of criticizing can be chosen from spin coating, spray coating, lamination, casting etc. according to the appropriate technology that the photoresistance characteristic adopted; Photoresistance can be eurymeric, as Clariant AZ4620, TOK LA900, PMMA, and, photoresistance can be minus such as JSR THB-126N, MicroChem SU-8 etc., can select suitable photoresistance according to product performance, in present embodiment, adopt the higher epoxy-basephotoresist/Su-8 of structural strength and cover photoresistance 302, launch to help successive process with next batch of rotary coating (spin coating); Then, carry out 302 bakings of ground floor photoresistance, after baking, wherein solvent evaporation makes 302 hardening of ground floor photoresistance, expose afterwards, develop, with the ground floor photoresistance microstructure 304 that is shaped required, wherein, baking method has directly heating of heating plate, baking oven or infrared ray heating etc., Exposure mode has X-ray lithography, UV lithography, direct write e-beam etc., and present embodiment is an example with hot plate backing/UV exposure, and the processing procedure of step 32 is as shown in Fig. 8-b, after step 32 is finished, and enter step 33.
In step 33, in ground floor photoresistance microstructure 304 pattern potholes, electroplate required metal 305 structures, metal 305 optional Au, Cu, Ni, Ni-Mn alloy, Ni-Fealloy, Ni-Co alloy, the Sn-Pb etc. of taking from of general electrodepositable, the processing procedure of step 33 and enters step 34 as shown in Fig. 8-c.
In step 34, ground floor photoresistance microstructure 304 is removed earlier with solvent (not shown go out) or dry ecthing (not shown go out), apply diffluent hard waxes or high molecular polymer again to form first hard layer 307, these first hard layer, 307 materials can bear the mechanical force of attrition process, can improve simultaneously the restriction that photoresistance is selected again, the processing procedure of step 34 and enters step 35 as shown in Fig. 8-d.
In step 35, carry out planarization, attrition process is to obtain ground floor metal micro structure 306, attrition process will make coated first hard layer 307 and plated metal 305 consistency of thickness, wherein, the attrition process mode is chosen from chemical machine processing (CMP), mechanical lapping, polishing etc., and the processing procedure of step 35 and enters step 36 as shown in Fig. 8-e.
In step 36, repeating step 32 is to step 35, coated diffluent hard waxes or high molecular polymer will form second hard layer 312, and in first hard layer 307 that is applied and second hard layer 312 and on the surface of this substrate 300, the microprobe structure 418 that formation is comprised columnar microstructure 401, horizontal boom beam 402,403 probe bases and microprobe 404 more than at least 1, at this, microprobe structure 418 is microprobe array (micro probe array) pattern; Microprobe structure 418 comprises the columnar microstructure 401 more than at least 1, horizontal boom beam 402, probe base 403, and microprobe 404, wherein, this columnar microstructure 401 more than at least 1 is in its following contact mat (contact pad) of connection substrate 300 (not shown go out), this horizontal boom beam 402 in order to provide enough on, following deflection, with compensation probe (not shown go out), plane error between tester table (not shown go out), but this horizontal boom beam 402 is than the width of the structure plan of microprobe 404, length is little, therefore, before electroplate forming microprobe 404, should deposit one deck again and electroplate initial layers (not shown go out); The processing procedure of step 36 and enters step 37 as shown in Fig. 8-f.
In step 37, remove first hard layer 307 and second hard layer 312 with solvent (not shown go out) or dry ecthing (not shown go out), in order to disengage the microprobe structure 418 of the columnar microstructure 401, horizontal boom beam 402, probe base 403 and the microprobe 404 that comprise more than at least 1, the processing procedure of step 37 and enters step 38 as shown in Fig. 8-g.
In step 38, remove not the Seed Layer that covered by the columnar microstructure more than at least 1 401, horizontal boom beam 402, probe base 403 and microprobe 404 partly 319 with etching solution (not shown go out), to obtain good microprobe structure 418 on substrate 300, the processing procedure of step 38 is as shown in Fig. 8-h.
Fig. 8-a to Fig. 8-h is a synoptic diagram, in order to explicit declaration another embodiment that utilizes microprobe structure making process of the present invention in Fig. 7, with the processing procedure situation of the process step that produces another microprobe structure of the present invention.
Other embodiment of microprobe structure of the present invention, can be implemented by microprobe making process of the present invention, and the employing of the microprobe structure of those embodiment repeats identical microprobe processing procedure, also can have the different little metal constructions more than two layers, see also Fig. 9-a to Fig. 9-d, Figure 10, Figure 11-a to Figure 11-c, be other form of implementation of microprobe structure of the present invention.
Fig. 9-a is a synoptic diagram, utilize the formed another microprobe structure of microprobe structure making process of the present invention in order to explicit declaration. as shown in Fig. 9-a, microprobe structure 518 comprises the columnar microstructure 501 more than at least 1, horizontal boom beam 502, horizontal beam 503, probe base 504, and microprobe 505, wherein, horizontal boom beam 502 is connected with horizontal beam 503 mutual storehouses, this columnar microstructure 501 more than at least 1 is in its following contact mat (contact pad) of electrical communication substrate 400 (not shown go out), this horizontal boom beam 502 in order to provide enough on, following deflection is with compensation probe (not shown go out), plane error between tester table (not shown go out).
Fig. 9-b is a synoptic diagram, utilize the formed microprobe structure again of microprobe structure making process of the present invention in order to explicit declaration. shown in Fig. 9-b, microprobe structure 618 comprises the columnar microstructure 601 more than at least 1, horizontal boom beam 602, horizontal beam 603, probe base 604, and microprobe 605, wherein, horizontal boom beam 602 is connected with horizontal beam 603 mutual storehouses, this columnar microstructure 601 more than at least 1 is in its following contact mat (contact pad) of electrical communication substrate 500 (not shown go out), this horizontal boom beam 602 in order to provide enough on, following deflection is with compensation probe (not shown go out), plane error between tester table (not shown go out).
According to mechanical analysis, microprobe 104,404 among Fig. 6-g, Fig. 8-h is when stressed, its maximum stress position engages interface and position at the engage interface of horizontal boom beam 402 with columnar microstructure 401 more than at least 1 horizontal boom beam 102 and columnar microstructure 101 more than at least 1, at this, the most effective mode of gaining in strength is exactly on the tail end of horizontal boom beam 102,402 or increases at least 1 horizontal beam down.Thereby, in Fig. 9-a, under the tail end of horizontal boom beam 502, increase by a horizontal beam 503, and in Fig. 9-b, then on the tail end of horizontal boom beam 602, increase by a horizontal beam 603.
Fig. 9-c is a synoptic diagram, utilize the formed another microprobe structure of microprobe structure making process of the present invention in order to explicit declaration. shown in Fig. 9-c, microprobe structure 718 comprises the columnar microstructure 701 more than at least 1, horizontal boom beam 702, horizontal beam 703, horizontal beam 704, probe base 705, and microprobe 706, wherein, horizontal beam 703 is connected with horizontal beam 704 storehouses on it, and horizontal beam 704 is connected with horizontal boom beam 702 storehouses on it, this columnar microstructure 701 more than at least 1 is in its following contact mat (contact pad) of electrical communication substrate 600 (not shown go out), this horizontal boom beam 702 in order to provide enough on, following deflection is with compensation probe (not shown go out), plane error between tester table (not shown go out).
Fig. 9-d is a synoptic diagram, utilize formed another microprobe structure of microprobe structure making process of the present invention in order to explicit declaration. shown in Fig. 9-d, microprobe structure 818 comprises the columnar microstructure 801 more than at least 1, horizontal boom beam 802, horizontal beam 803, horizontal beam 804, probe base 805, and microprobe 806, wherein, horizontal boom beam 802 is connected with horizontal beam 803 storehouses on it, and horizontal beam 803 is connected with horizontal beam 704 storehouses on it, this columnar microstructure 801 more than at least 1 is in its following contact mat (contactpad) of electrical communication substrate 600 (not shown go out), this horizontal boom beam 802 in order to provide enough on, following deflection is with compensation probe (not shown go out), plane error between tester table (not shown go out).
According to mechanical analysis, microprobe 104,404 among Fig. 6-g, Fig. 8-h is when stressed, its maximum stress position engages interface and position at the engage interface of horizontal boom beam 402 with columnar microstructure 401 more than at least 1 horizontal boom beam 102 and columnar microstructure 101 more than at least 1, at this, the most effective mode of gaining in strength is exactly on the tail end of horizontal boom beam 102,402 or increases at least 1 horizontal beam down.Thereby, in Fig. 9-c, under the tail end of horizontal boom beam 702, increase horizontal beam 703 and horizontal beam 704, and in Fig. 9-d, then on the tail end of horizontal boom beam 802, increase horizontal beam 803 and horizontal beam 804.
Figure 10 is a synoptic diagram, utilize the formed microprobe structure again of microprobe structure making process of the present invention in order to explicit declaration. as shown in Figure 10, microprobe structure 918 comprises the columnar microstructure 901 more than at least 1, horizontal boom beam 902, horizontal beam 903, horizontal beam 904, probe base 905, and microprobe 906, wherein, probe base 905 is by little metal construction 9051, and little metal construction 9052 is formed, this columnar microstructure 901 more than at least 1 is in its following contact mat (contact pad) of electrical communication substrate 700 (not shown go out), this horizontal boom beam 902 in order to provide enough on, following deflection is with compensation probe (not shown go out), plane error between tester table (not shown go out).
When the deflection of probe vertical direction is about 75 μ m, if when probe base was a slim-lined construction as Fig. 6-g, Fig. 8-h middle probe seat 103,403, then difficulty was made, thereby, in Figure 10, probe base 905 will be made up of little metal construction 9051 and little metal construction 9052.
Figure 11-a is a synoptic diagram, utilize formed another microprobe structure of microprobe structure making process of the present invention in order to explicit declaration. shown in Figure 11-a, microprobe structure 728 comprises columnar microstructure 711, horizontal boom beam 712, probe base 713, and microprobe 714, wherein, columnar microstructure 711 is in its following contact mat (contact pad) of electrical communication substrate 720 (not shown go out), this horizontal boom beam 712 in order to provide enough on, following deflection, with compensation probe (not shown go out), plane error between tester table (not shown go out), at this, be the adhesion between increase columnar microstructure and substrate, thereby strengthen the contact area of columnar microstructure and substrate.
Figure 11-b is a synoptic diagram, utilize the formed another microprobe structure of microprobe structure making process of the present invention in order to explicit declaration. shown in Figure 11-b, microprobe structure 828 comprises the columnar microstructure 811 more than at least 1, horizontal boom beam 812, horizontal beam 813, horizontal beam 814, probe base 815, and microprobe 816, wherein, horizontal beam 813 is connected with horizontal beam 814 storehouses on it, and horizontal beam 814 is connected with horizontal boom beam 812 storehouses on it, columnar microstructure 811 is in its following contact mat (contact pad) of electrical communication substrate 820 (not shown go out), this horizontal boom beam 812 in order to provide enough on, following deflection, with compensation probe (not shown go out), plane error between tester table (not shown go out), at this, be the adhesion between increase columnar microstructure and substrate, thereby strengthen the contact area of columnar microstructure and substrate.
Figure 11-c is a synoptic diagram, utilize the formed microprobe structure again of microprobe structure making process of the present invention in order to explicit declaration. shown in Figure 11-c, microprobe structure 928 comprises the columnar microstructure 911 more than at least 1, horizontal boom beam 912, horizontal beam 913, horizontal beam 914, probe base 915, and microprobe 916, wherein, horizontal boom beam 912 is connected with horizontal beam 913 storehouses on it, and horizontal beam 913 is connected with horizontal beam 914 storehouses on it, columnar microstructure 911 is in its following contact mat (contact pad) of electrical communication substrate 920 (not shown go out), this horizontal boom beam 912 in order to provide enough on, following deflection, with compensation probe (not shown go out), plane error between tester table (not shown go out), at this, be the adhesion between increase columnar microstructure and substrate, thereby strengthen the contact area of columnar microstructure and substrate.
According to mechanical analysis, microprobe 104,404 among Fig. 6-g, Fig. 8-h is when stressed, its maximum stress position engages interface and position at the engage interface of horizontal boom beam 402 with columnar microstructure 401 more than at least 1 horizontal boom beam 102 and columnar microstructure 101 more than at least 1, at this, the most effective mode of gaining in strength is exactly on the tail end of horizontal boom beam 102,402 or increases at least 1 horizontal beam down.Thereby, in Figure 11-b, under the tail end of horizontal boom beam 812, increase horizontal beam 813 and horizontal beam 814, and in Figure 11-c figure, then on the tail end of horizontal boom beam 912, increase horizontal beam 913 and horizontal beam 914.
In the embodiment of above microprobe structure of the present invention, according to mechanical analysis, for example, in Fig. 6-g, microprobe 104 among Fig. 8-h, 404 when stressed, its maximum stress position is at the engage interface of horizontal boom beam 102 with columnar microstructure 101 more than at least 1, and the position is at the engage interface of horizontal boom beam 402 with columnar microstructure 401 more than at least 1, at this, the mode of gaining in strength also can be with horizontal boom beam 102, the aftermost breadth of horizontal boom beam 402 amplifies, and the execution situation of the embodiment of the horizontal boom beam that aftermost breadth amplifies, its principle is identical, it is described to be similar to above embodiment, does not repeat them here.
In above utilize microprobe making process of the present invention with the embodiment that produces the microprobe structure in, for replace to electroplate the second sacrifice layer metal with macromolecule; And, no matter be in the microprobe structure 218 shown in Fig. 6-g, in the microprobe structure 418 shown in Fig. 8-h, and/or each microprobe structure in Fig. 9-a to Fig. 9-d, Figure 10, Figure 11-a to Figure 11-c, those microprobe structures all have the structural design of strengthening semi-girder, be applicable to the assembly that all kinds of electronic assembly tests are used, can be in order to measuring head as probe; Those microprobe structures effectively increase test frequency range (bandwidth), dwindle spacing (pitch) and promote (parallel) power of test side by side.
In addition, though in the microprobe structure 218 shown in Fig. 6-g, in the microprobe structure 418 shown in Fig. 8-h, and/or in Fig. 9-a to Fig. 9-d, Figure 10, each microprobe structure shown in Figure 11-a to Figure 11-c, for being applicable to the naked brilliant microprobe of testing the probe (probe card) of usefulness of semiconductor subassembly, so, microprobe making process of the present invention is also applicable to producing the assembly of using applicable to all kinds of electronic assembly tests, naked brilliant test as semiconductor subassembly, the burn in process of package assembling, test suites such as the test of printed circuit board (PCB) and burn in process, or, be applied in the coupling arrangement of electronic package, lead-in wire and encapsulation as semiconductor subassembly, and its reason is all identical, be similar to above-described embodiment, hereat, do not repeat them here.
Comprehensive above embodiment, we can obtain a kind of microprobe structure of the present invention and manufacture method thereof, be applicable to the probe card assembly that electronic assembly test is used, microprobe structure of the present invention and manufacture method thereof are utilized little shadow of manufacture of semiconductor, electroplate, planarization, etching technique, and replace with macromolecule and to electroplate the second sacrifice layer metal, have on the substrate surface of space conversion in one, form the little metal construction that has more than two layers in succession, use the microprobe structure that obtains having this little metal construction more than two layers, at this, the little metal construction of each layer is made up of a kind of material, and this little metal construction more than two layers can be formed by same material and/or by different materials.The microprobe structure of utilizing microprobe structure making process of the present invention to be made, has the structural design of strengthening semi-girder, be applicable to the assembly that all kinds of electronic assembly tests are used, can be in order to measuring head as probe, and effectively increase the test frequency range, dwindle spacing and promote power of test side by side.Microprobe making process of the present invention and structure thereof comprise following advantage:
A kind of microprobe structure and manufacture method thereof are provided, be applicable to the probe card assembly that electronic assembly test is used, microprobe structure of the present invention and manufacture method manufacture method thereof are to replace with macromolecule to electroplate the second sacrifice layer metal, the microprobe structure of utilizing microprobe structure making process of the present invention to be made, has the structural design of strengthening semi-girder, be applicable to the assembly that all kinds of electronic assembly tests are used, can be in order to measuring head (testing head) as probe.
The microprobe structure of utilizing microprobe structure making process of the present invention to be made can effectively increase test frequency range (bandwidth), dwindles spacing (pitch) and promote (parallel) power of test side by side.
The microprobe structure of utilizing microprobe structure making process of the present invention to be made, the assembly of using applicable to all kinds of electronic assembly tests, as the naked brilliant test (bare testing) of semiconductor subassembly, test suite such as the test of the burn in process of package assembling (burn-in), printed circuit board (PCB) and burn in process, or, be applied in the coupling arrangement of electronic package, as the lead-in wire and the encapsulation of semiconductor subassembly.
The microprobe structure of utilizing microprobe structure making process of the present invention to be made is applicable to the probe (microprobe of (probe card) of the naked brilliant test usefulness of semiconductor subassembly.
The above only is in order to explain preferred embodiment of the present invention; be not that attempt is done any pro forma restriction to the present invention according to this; therefore, all have in that identical creation spirit is following do relevant any modification of the present invention or change, all must be included in the category that the invention is intended to protect.
Claims (42)
1. a microprobe structure making process is applicable to the probe card assembly that electronic assembly test is used, and it is characterized in that, this microprobe structure making process comprises following program:
Prepare a substrate with space conversion;
In the little metal construction that forms in succession on the surface of this substrate more than two layers;
Remove this little metal construction more than two layers other material in addition, this little metal construction more than two layers of this liquid that can not etching with liquid and/or dry corrosion; And
In the microprobe structure that obtains having this little metal construction more than two layers on this substrate.
2. microprobe structure making process as claimed in claim 1 is characterized in that, the program that this preparation one has the substrate of space conversion comprises following steps:
Choose a substrate with space conversion; And
On this substrate, deposit Seed Layer, the tack between this Seed Layer tool electric conductivity and tool and this substrate, optional Cr under Au, Ti under Au, Ti under Cu, the Ti-W underAu of taking from.
3. microprobe structure making process as claimed in claim 1 is characterized in that, comprises following steps in the program that forms this little metal construction more than two layers on the surface of this substrate in succession:
(a) criticize and cover photoresistance and/or hard waxes and/or high molecular polymer;
(b) criticize this photoresistance that covers is toasted, this photoresistance is after baking, and wherein solvent evaporation makes this photoresistance hardening, exposes afterwards, develops, to be shaped required micro structured pattern;
(c) in this micro structured pattern pothole, electroplate required metal construction; (d) carry out attrition process, attrition process will make this photoresistance and plated metal consistency of thickness; And choose and utilize above step (a) to (d), in the little metal construction that forms on the surface of this substrate more than two layers.
4. microprobe structure making process as claimed in claim 1 is characterized in that, this liquid is solvent, and in order to remove photoresistance and/or hard waxes and/or high molecular polymer, this solvent can this little metal construction more than two layers of etching.
5. microprobe structure making process as claimed in claim 2, it is characterized in that, this liquid comprises solvent and etching solution, this solvent is in order to remove photoresistance and/or hard waxes and/or high molecular polymer, this solvent can this little metal construction more than two layers of etching, and, remove this Seed Layer with this etching solution.
6. microprobe structure making process as claimed in claim 1 or 2 is characterized in that this substrate is chosen from silicon substrate, glass substrate, ceramic substrate.
7. microprobe structure making process as claimed in claim 6 is characterized in that, this ceramic substrate is chosen from multilayer ceramic substrate, low-temperature co-fired ceramic substrate, High Temperature Co Fired Ceramic substrate.
8. microprobe structure making process as claimed in claim 2 is characterized in that, this depositional mode is evaporation, sputter, electroless plating.
9. microprobe structure making process as claimed in claim 3 is characterized in that, columnar microstructure at least 1 or more, horizontal boom beam, probe base and the microprobe of this little metal construction more than two layers in order to form this microprobe structure.
10. microprobe structure making process as claimed in claim 3, it is characterized in that, columnar microstructure at least 1 or more, horizontal boom beam, horizontal beam, probe base and the microprobe of this little metal construction more than two layers in order to form this microprobe structure, wherein, this horizontal boom beam is connected with the mutual storehouse of this horizontal beam, this has the contact mat of the substrate of space conversion to this columnar microstructure more than at least 1 in its following electrical communication, this horizontal boom beam is in order to provide enough upper and lower deflections, with the plane error between compensation probe, tester table.
11. microprobe structure making process as claimed in claim 3, it is characterized in that, this little metal construction more than two layers is in order to form the columnar microstructure more than at least 1 of this microprobe structure, the horizontal boom beam, one horizontal beam, another horizontal beam, probe base, and microprobe, wherein, this horizontal beam is connected with this another horizontal beam storehouse on it, and this another horizontal beam is connected with this horizontal boom beam storehouse on it, this has the contact mat of the substrate of space conversion to this columnar microstructure more than at least 1 in its following electrical communication, this horizontal boom beam in order to provide enough on, following deflection is with the compensation probe, plane error between tester table.
12. microprobe structure making process as claimed in claim 3, it is characterized in that, columnar microstructure at least 1 or more, horizontal boom beam, a horizontal beam, another horizontal beam, probe base and the microprobe of this little metal construction more than two layers in order to form this microprobe structure, wherein, this horizontal boom beam is connected with this horizontal beam storehouse on it, and this horizontal beam is connected with this another horizontal beam storehouse on it, this columnar microstructure more than at least 1 in its down electrical communication this have the contact mat of the substrate of space conversion.
13. as claim 9 or 10 or 11 or 12 described microprobe structure making process, it is characterized in that, strengthen this at least more than one the columnar microstructure and the contact area of this substrate with space conversion, using increases this at least more than one columnar microstructure and the adhesion between this substrate with space conversion.
14., it is characterized in that this probe base is made up of a little metal construction and another little metal construction as claim 11 or 12 described microprobe structure making process.
15. microprobe structure making process as claimed in claim 3 is characterized in that, the technology that this batch covered photoresistance is chosen from spin coating, spray coating, lamination, casting.
16. microprobe structure making process as claimed in claim 3 is characterized in that, it is eurymeric that this batch covered photoresistance.
17. microprobe structure making process as claimed in claim 3 is characterized in that, it is minus that this batch covered photoresistance.
18. microprobe structure making process as claimed in claim 3, it is characterized in that, the mode of this baking is chosen from directly heating of heating plate, baking oven, infrared ray heating, and the mode of this exposure is chosen from X-ray lithography, UV lithography, direct write e-beam.
19. microprobe structure making process as claimed in claim 3 is characterized in that the mode of this attrition process is chosen from chemical machine processing, mechanical lapping, polishing.
20., it is characterized in that this microprobe structure more than two layers is chosen from Au, Cu, Ni, Ni-Mn alloy, Ni-Fe alloy, Ni-Co alloy, Sn-Pb as claim 1 or 2 or 3 described microprobe structure making process.
21. a microprobe structure is applicable to the probe card assembly that electronic assembly test is used, and it is characterized in that, this microprobe structure comprises:
At least more than one columnar microstructure, this at least more than one columnar microstructure are formed at one to have on the surface of substrate of space conversion;
The horizontal boom beam forms this horizontal boom beam on this at least more than one the columnar microstructure in each;
Probe base forms this probe base on each this horizontal boom beam; And
Microprobe forms this microprobe on each this probe base;
Wherein, this at least more than one this columnar microstructure, this horizontal boom beam, this probe base, this microprobe form on this surface of this substrate in succession, and, remove other material beyond this at least more than one this columnar microstructure, this horizontal boom beam, this probe base, this microprobe with liquid and/or dry ecthing, this liquid and/or this dry ecthing can this microprobe structures of etching.
22. a microprobe structure is applicable to the probe card assembly that electronic assembly test is used, and it is characterized in that, this microprobe structure comprises:
At least more than one columnar microstructure, this at least more than one columnar microstructure are formed at one to have on the surface of substrate of space conversion;
At least more than one horizontal beam forms each this at least more than one horizontal beam on this at least more than one the columnar microstructure in each;
The horizontal boom beam forms this horizontal boom beam on this at least more than one the horizontal beam in each;
Probe base forms this probe base on each this horizontal boom beam; And
Microprobe forms this microprobe on each this probe base;
Wherein, this at least more than one this columnar microstructure, this at least more than one horizontal beam, this horizontal boom beam, this probe base, this microprobe form on this surface of this substrate in succession, and, remove other material beyond this at least more than one this columnar microstructure, this at least more than one horizontal beam, this horizontal boom beam, this probe base, this microprobe with liquid and/or dry ecthing, this liquid and/or this dry ecthing can this microprobe structures of etching.
23. a microprobe structure is applicable to the probe card assembly that electronic assembly test is used, and it is characterized in that, this microprobe structure comprises:
At least more than one columnar microstructure, this at least more than one columnar microstructure are formed at one to have on the surface of substrate of space conversion;
The horizontal boom beam forms this horizontal boom beam on this at least more than one the columnar microstructure in each;
At least more than one horizontal beam forms each this at least more than one horizontal beam on each this horizontal boom beam;
Probe base forms this probe base on each this horizontal boom beam; And
Microprobe forms this microprobe on each this probe base;
Wherein, this at least more than one this columnar microstructure, this horizontal boom beam, this at least more than one horizontal beam, this probe base, this microprobe form on this surface of this substrate in succession, and, remove other material beyond this at least more than one this columnar microstructure, this horizontal boom beam, this at least more than one horizontal beam, this probe base, this microprobe with liquid and/or dry ecthing, this liquid and/or this dry ecthing can this microprobe structures of etching.
24. as claim 21 or 22 or 23 described microprobe structures, it is characterized in that, strengthen this at least more than one the columnar microstructure and the surface contact area of this substrate, use the adhesion between the surface that increases this at least more than one columnar microstructure and this substrate with space conversion with space conversion.
25., it is characterized in that this probe base is made up of a little metal construction and another little metal construction as claim 22 or 23 described microprobe structures.
26., it is characterized in that described microprobe structure is a microprobe array pattern as claim 21 or 22 or 23 described microprobe structures.
27., it is characterized in that described microprobe structure is chosen from Au, Cu, Ni, Ni-Mn alloy, Ni-Fe alloy, Ni-Co alloy, Sn-Pb as claim 21 or 22 or 23 described microprobe structures.
28., it is characterized in that this at least more than one columnar microstructure is communicated with the contact mat of this substrate down in it as claim 21 or 22 or 23 described microprobe structures.
29. as claim 21 or 22 or 23 described microprobe structures, it is characterized in that, this horizontal boom beam is in order to providing enough upper and lower deflections, and with the plane error between compensation probe, tester table, and this horizontal boom beam is little than width, the length of the structure plan of this microprobe.
30. microprobe structure as claimed in claim 29 is characterized in that, this microprobe forms to electroplate, and before this electroplated this microprobe of formation, deposition one was electroplated initial layers.
31. as claim 21 or 22 or 23 described microprobe structures, it is characterized in that, be formed on this surface of this substrate with space conversion prior to this at least more than one columnar microstructure before, has on this surface of this substrate of space conversion deposition Seed Layer earlier, tack between this Seed Layer tool electric conductivity and tool and this substrate, optional Cr under Au, Ti under Au, Ti under Cu, the Ti-W under Au of taking from.
32. as claim 21 or 22 or 23 described microprobe structures, it is characterized in that, this at least more than one this columnar microstructure, this horizontal boom beam, this probe base, this microprobe form on this surface of this substrate in succession, are to choose and utilize following steps to be finished:
Criticize and cover photoresistance and/or hard waxes and/or high molecular polymer;
Criticize this photoresistance that covers is toasted, and this photoresistance is after baking, and wherein solvent evaporation makes this photoresistance hardening, exposes afterwards, develops, to be shaped required micro structured pattern;
In this micro structured pattern pothole, electroplate required metal construction; And
Carry out attrition process, attrition process will make this photoresistance and plated metal consistency of thickness.
33. as claim 21 or 22 or 23 described microprobe structures, it is characterized in that this liquid is solvent, in order to remove photoresistance and/or hard waxes and/or high molecular polymer, this solvent can this microprobe structure of etching.
34. microprobe structure as claimed in claim 31 is characterized in that this liquid comprises solvent and etching solution, this solvent is in order to remove photoresistance and/or hard waxes and/or high molecular polymer, this solvent can this microprobe structure of etching, and, remove this Seed Layer with this etching solution.
35., it is characterized in that this this substrate with space conversion is chosen from silicon substrate, glass substrate, ceramic substrate as claim 31 or 32 or 33 described microprobe structures.
36. microprobe structure as claimed in claim 35 is characterized in that, this ceramic substrate is chosen from multilayer ceramic substrate, low-temperature co-fired ceramic substrate, High Temperature Co Fired Ceramic substrate.
37. microprobe structure as claimed in claim 30 is characterized in that, the mode of this deposition is from evaporation, sputter or electroless plating.
38. microprobe structure as claimed in claim 32 is characterized in that, the mode that this batch covered photoresistance is spin coating, spray coating, lamination, casting.
39. microprobe structure as claimed in claim 32 is characterized in that, it is eurymeric that this batch covered photoresistance.
40. microprobe structure as claimed in claim 32 is characterized in that, it is minus that this batch covered photoresistance.
41. microprobe structure as claimed in claim 32 is characterized in that, the mode of this baking is directly heating of heating plate, baking oven, infrared ray heating, and the mode of this exposure is X-raylithography, UV lithography, direct write e-beam.
42. microprobe structure as claimed in claim 32 is characterized in that, the mode of this attrition process is chemical machine processing, mechanical lapping, polishing.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010100004292A CN102121944A (en) | 2010-01-08 | 2010-01-08 | Microprobe structure and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010100004292A CN102121944A (en) | 2010-01-08 | 2010-01-08 | Microprobe structure and manufacturing method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102121944A true CN102121944A (en) | 2011-07-13 |
Family
ID=44250541
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010100004292A Pending CN102121944A (en) | 2010-01-08 | 2010-01-08 | Microprobe structure and manufacturing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102121944A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103630712A (en) * | 2012-08-23 | 2014-03-12 | 技鼎股份有限公司 | Blade-shaped microprobe structure and manufacturing method thereof |
| CN104215802A (en) * | 2013-05-31 | 2014-12-17 | 上海华虹宏力半导体制造有限公司 | Design method for wafer test probe card |
| CN104076172B (en) * | 2013-03-26 | 2017-01-18 | 旺矽科技股份有限公司 | Method for manufacturing space transformer for probe card |
| CN110967533A (en) * | 2018-10-01 | 2020-04-07 | 巨擘科技股份有限公司 | Probe card device |
| CN111766418A (en) * | 2020-08-14 | 2020-10-13 | 强一半导体（苏州）有限公司 | MEMS probe card |
| CN116819145A (en) * | 2023-08-26 | 2023-09-29 | 江苏鹏利芝达恩半导体有限公司 | Method for manufacturing probe by adopting non-conductive gold plating method |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1437217A (en) * | 2002-02-06 | 2003-08-20 | 台湾积体电路制造股份有限公司 | Microprobe making process |
| CN1555893A (en) * | 2003-12-30 | 2004-12-22 | 上海交通大学 | Method of bulk processing micro probe based on three dimensional micro processing technology |
| CN1651912A (en) * | 2005-03-24 | 2005-08-10 | 厦门大学 | Composite scanning chlorion sensitive micro-probe and preparing process thereof |
| CN2840049Y (en) * | 2005-07-05 | 2006-11-22 | 技鼎股份有限公司 | Micro-elastic contactor structure |
| CN1901161A (en) * | 2005-07-22 | 2007-01-24 | 米辑电子股份有限公司 | Method for fabricating a circuitry component by continuous electroplating and circuitry component structure |
| WO2008103709A1 (en) * | 2007-02-22 | 2008-08-28 | Teradyne, Inc. | Design-for-test micro probe |
| CN101254094A (en) * | 2008-04-10 | 2008-09-03 | 复旦大学 | Method for manufacturing assembled neuro microprobe array |
| CN101311733A (en) * | 2007-05-24 | 2008-11-26 | 旺矽科技股份有限公司 | Electrical contact device manufacture method |
-
2010
- 2010-01-08 CN CN2010100004292A patent/CN102121944A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1437217A (en) * | 2002-02-06 | 2003-08-20 | 台湾积体电路制造股份有限公司 | Microprobe making process |
| CN1555893A (en) * | 2003-12-30 | 2004-12-22 | 上海交通大学 | Method of bulk processing micro probe based on three dimensional micro processing technology |
| CN1651912A (en) * | 2005-03-24 | 2005-08-10 | 厦门大学 | Composite scanning chlorion sensitive micro-probe and preparing process thereof |
| CN2840049Y (en) * | 2005-07-05 | 2006-11-22 | 技鼎股份有限公司 | Micro-elastic contactor structure |
| CN1901161A (en) * | 2005-07-22 | 2007-01-24 | 米辑电子股份有限公司 | Method for fabricating a circuitry component by continuous electroplating and circuitry component structure |
| WO2008103709A1 (en) * | 2007-02-22 | 2008-08-28 | Teradyne, Inc. | Design-for-test micro probe |
| CN101311733A (en) * | 2007-05-24 | 2008-11-26 | 旺矽科技股份有限公司 | Electrical contact device manufacture method |
| CN101254094A (en) * | 2008-04-10 | 2008-09-03 | 复旦大学 | Method for manufacturing assembled neuro microprobe array |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103630712A (en) * | 2012-08-23 | 2014-03-12 | 技鼎股份有限公司 | Blade-shaped microprobe structure and manufacturing method thereof |
| CN103630712B (en) * | 2012-08-23 | 2016-01-27 | 技鼎股份有限公司 | Blade-like microprobe structure and preparation method thereof |
| CN104076172B (en) * | 2013-03-26 | 2017-01-18 | 旺矽科技股份有限公司 | Method for manufacturing space transformer for probe card |
| CN104215802A (en) * | 2013-05-31 | 2014-12-17 | 上海华虹宏力半导体制造有限公司 | Design method for wafer test probe card |
| CN110967533A (en) * | 2018-10-01 | 2020-04-07 | 巨擘科技股份有限公司 | Probe card device |
| CN111766418A (en) * | 2020-08-14 | 2020-10-13 | 强一半导体（苏州）有限公司 | MEMS probe card |
| CN111766418B (en) * | 2020-08-14 | 2021-01-19 | 强一半导体（苏州）有限公司 | MEMS probe card |
| CN116819145A (en) * | 2023-08-26 | 2023-09-29 | 江苏鹏利芝达恩半导体有限公司 | Method for manufacturing probe by adopting non-conductive gold plating method |
| CN116819145B (en) * | 2023-08-26 | 2023-11-03 | 江苏鹏利芝达恩半导体有限公司 | Method for manufacturing probe by adopting non-conductive gold plating method |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE60115437T2 (en) | TEST SYSTEM OF INTEGRATED CIRCUITS | |
| KR101921291B1 (en) | Semiconductor Device Test Socket | |
| KR101339493B1 (en) | Space Transformer for Probe Card and Manufacturing Method Thereof | |
| US7247035B2 (en) | Enhanced stress metal spring contactor | |
| KR20050014885A (en) | Construction structures and manufacturing processes for probe card assemblies and packages having wafer level springs | |
| US7579856B2 (en) | Probe structures with physically suspended electronic components | |
| US8575954B2 (en) | Structures and processes for fabrication of probe card assemblies with multi-layer interconnect | |
| CN102121944A (en) | Microprobe structure and manufacturing method thereof | |
| KR100975904B1 (en) | Contactor, contact structure therewith, probe card, testing apparatus, process for producing contact structure, and apparatus for producing contact structure | |
| US20040223309A1 (en) | Enhanced compliant probe card systems having improved planarity | |
| TWI655438B (en) | Probe card for electronic device test equipment for special temperature applications | |
| JP2008504559A (en) | Substrate with patterned conductive layer | |
| KR20050085387A (en) | Method for making a socket to perform testing on integrated circuits and socket made | |
| WO2008033428A2 (en) | Compliance partitioning in testing of integrated circuits | |
| WO2007115053A2 (en) | Fine pitch microfabricated spring contact structure and method | |
| Soejima et al. | New probe microstructure for full-wafer, contact-probe cards | |
| CN2840049Y (en) | Micro-elastic contactor structure | |
| KR101785428B1 (en) | Test Socket of Semiconductor Device | |
| KR100515235B1 (en) | Needle of probe card using micro-fabrication, manufacturing method thereof and probe card manufactured by the needle | |
| KR101856124B1 (en) | Probe module and manufacturing method thereof | |
| KR101006929B1 (en) | Probe assembly | |
| JP6548963B2 (en) | Method of manufacturing probe, probe, probe laminate, probe assembly, and method of manufacturing probe assembly | |
| KR100915326B1 (en) | Method of manufacturing an apparatus for inspecting electric condition | |
| KR101707240B1 (en) | Contact Tip Attach Probe Substrate, method of manufacturing the Contact Tip Probe Substrate thereof | |
| CN105319400A (en) | Vertical probe card and technology method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20110713 |