CN102115024B - System and method for releasing micro-electromechanical system (MEMS) structure by etching silicon sacrificial layer - Google Patents

System and method for releasing micro-electromechanical system (MEMS) structure by etching silicon sacrificial layer Download PDF

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CN102115024B
CN102115024B CN2009102445282A CN200910244528A CN102115024B CN 102115024 B CN102115024 B CN 102115024B CN 2009102445282 A CN2009102445282 A CN 2009102445282A CN 200910244528 A CN200910244528 A CN 200910244528A CN 102115024 B CN102115024 B CN 102115024B
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CN102115024A (en
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王磊
惠瑜
高超群
景玉鹏
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Wuxi speed semiconductor technology Co., Ltd.
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Institute of Microelectronics of CAS
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Abstract

The invention discloses system and method for releasing a micro-electromechanical system (MEMS) structure by etching a silicon sacrificial layer. The method adopts xenon difluoride as an etching reactive gas and adopts supercritical carbon dioxide as a carrier gas to release the silicon sacrificial layer. Based on the unique property of carbon dioxide in a supercritical state, silicon is etched more uniformly by xenon difluoride, the smoothness of an etched surface is higher and the etching is more complete. Compared with traditional wet release process and plasma release process, the method prevents devices from being damaged due to stirring or adhesion in the wet release process, improves the uniformity of an entire wafer, increases the reaction speed and the efficiency, shortens the process time, and achieves the effect of feasible large-scale production process of XeF2 etching.

Description

A kind of system and method that discharges the MEMS structure through the etch silicon sacrifice layer
Technical field
The present invention relates to MEMS sacrifice layer release tech field, relate in particular to a kind of system and method that discharges the MEMS structure through the etch silicon sacrifice layer.
Background technology
Release process is the technology of often using in the MEMS manufacture process.Release process is divided into wet method release and dry method discharges.Wet method discharges and adopts a large amount of acid-base solutions, has limited the application that is used for the device interconnection metal, and can cause the increase of environmental pollution and cost for wastewater treatment; Discharge etch period and be difficult to control; Slower at thin etch rate with long gap area; The most serious is the bunching that in dry run, can cause fine structure, and figure is destroyed.When dry method release using plasma carried out etching, the surface micro roughness after the etching was big, and etching is incomplete, and residue is arranged; Because the electric charge that inhomogeneous plasma produces can cause the inefficacy of Sensitive Apparatus on the silicon chip, and micro-structural is damaged; The plasma etching equipment price is expensive, and temperature required higher, the etching selection ratio brings device damage easily, is not suitable for the release of MEMS sacrifice layer of future generation.
XeF 2Be the agent of a kind of silicon etching of isotropism fast, need not plasma source, and many CMOS and semiconductor common used material are had very high selection ratio.One of main application is that the etch silicon sacrifice layer is to discharge the MEMS structure.As dry method release process, XeF 2Etching avoided wet method discharge in since stir or adhesion to the damage of device.XeF 2Extremely low to other semi-conducting material etch rate, this technology guarantees to promote yield, reduces manufacturing cost and improves device performance.Before, for the uniformity that improves the full wafer wafer passes through to reduce gas pressure and flow, or add the method for carrier gas.To influence etch rate and handling capacity yet reduce air pressure and flow, and adding carrier gas meeting lowers efficiency and increases operating cost.Supercritical carbon dioxide has guaranteed crystal column surface high smooth degree as carrier gas, and can not reduce etch rate and efficient.
Summary of the invention
The technical problem that (one) will solve
Main purpose of the present invention is to provide a kind of system and method that discharges the MEMS structure through the etch silicon sacrifice layer.
(2) technical scheme
Be an aspect that achieves the above object, the invention provides a kind of system through etch silicon sacrifice layer release MEMS structure, this system comprises:
CO 2The source is used to provide complementary atmospheric carbon dioxide, and silicon chip is carried out the physics auxiliary etch;
XeF 2The source is used to provide xenon difluoride gas, as reactive etch gas;
XeF 2Flow control valve 1 and CO 2Flow control valve 2 is used to control CO 2And XeF 2Flow, adjustments of gas CO 2And XeF 2Mixing ratio;
High-pressure pump 3 is used for CO 2And XeF 2Mist pressurize, and the mist after will pressurizeing gets in the ballast boxs 5 through first valve 4;
Ballast box 5 is used to deposit CO 2And XeF 2High pressure mixed gas, this high pressure mixed gas gets in the reaction chambers 8 through second valve 6 and heater strip 7;
Heater strip 7 is used for the CO with high pressure mixed gas 2Gas is heated to more than the critical-temperature;
Reaction chamber 8, the XeF in the high pressure mixed gas 2In reaction chamber 8, sacrificial silicon layer is corroded, the pressure in ballast box 5 and reaction chamber 8 reaches poised state, and the needle valve 9 that is communicated with reaction chamber 8 and spill cavity 10 will be opened, and the mist in the reaction chamber 8 is sent into spill cavity 10;
Spill cavity 10, after the pressure in the reaction chamber 8 surpasses setup pressure value, the mist in the reaction chamber 8 will spill in the spill cavity 10;
Exhaust gas processing device 11 is used for tail gas is handled, and avoids contaminated environment; And
Filter and purification devices 12, be used to realize the separation of gas, liquid, slag and the purifying of carbon dioxide.
In the such scheme, pressure sensor 21, nozzle 22, mask 23, sacrificial silicon layer 24, support 25 and magnetic stirring apparatus 26 are installed in the said reaction chamber 8, wherein:
Pressure sensor 21 is used for measuring the pressure of reaction chamber 8;
Nozzle 22, high pressure mixed gas incides the mask 23 on the sacrificial silicon layer 24 through nozzle 22;
Support 25 is used to hold the mask 23 on sacrificial silicon layer to be corroded 24 and the sacrificial silicon layer 24;
Magnetic stirring apparatus 26 is used for accelerated corrosion speed, makes etching more even.
In the such scheme, said mask 23 is silica, photoresist or metal mask.
Be another aspect that achieves the above object, the invention provides a kind of method, it is characterized in that this method comprises through etch silicon sacrifice layer release MEMS structure:
Open XeF 2Flow control valve 1 and CO 2Flow control valve 2, control CO 2And XeF 2Flow, adjustments of gas CO 2And XeF 2Mixing ratio;
Operation high-pressure pump 3 is to CO 2And XeF 2Mist pressurize, get in the ballast boxs 5 through first valve 4;
When ballast box 5 and reaction chamber 8 reach primary condition, second valve 6 is just opened, and allows CO 2And XeF 2Mist get in the reaction chamber 8;
Pressure in ballast box 5 and reaction chamber 8 reaches poised state, and the needle valve 9 that is communicated with reaction chamber 8 and spill cavity 10 will be opened, and the gas in the reaction chamber 8 is sent in the spill cavity 10, and needle valve 9 was closed when the pressure in reaction chamber 8 was returned to initial pressure;
Gas in the spill cavity 10 gets into the filtered pure makeup and puts 12 behind exhaust gas processing device 11, the carbon dioxide that from filter purification devices 12, comes out gets in the carbon dioxide storage tank once more.
In the such scheme, the initial pressure in the ballast box 5 is 11MPa, and initial temperature is 50 ℃; The initial pressure of reaction chamber 8 is 7.6MPa, and initial temperature is 50 ℃.
In the such scheme, at CO 2And XeF 2Mist get into reaction chamber 8 before, the heating through heater strip 7 makes that the carbon dioxide in the mist reaches supercritical temperature in the pipeline; This process lasts till that the pressure in ballast box 5 and the reaction chamber 8 reaches poised state.
In the such scheme, after said carbon dioxide got in the carbon dioxide storage tank once more, this method also comprised: feed pure CO 2Take out of reaction chamber 8 such as the residue of etching and some particles; Pressure in the pressure drop in the reaction chamber 8 to 7.6Mpa and ballast box 5 is increased to 11MPa; Repeat above step, after circulating so several times, the dry method of just accomplishing sacrificial silicon layer discharges.
In the such scheme, work as CO 2And XeF 2Mist when getting in the reaction chamber 8, through pressure sensor 21 pressure in the reaction chamber 8 is maintained 7.6MPa, be blown into the silicon substrate 24 as sacrifice layer, XeF through nozzle 22 2Can resolve into the F group, generate volatile fluoride, discharge through needle valve 9 then with pasc reaction; Magnetic stirring apparatus 26 accelerated corrosion speed make corrosion more even, and surface flatness is higher.
(3) beneficial effect
System and method through etch silicon sacrifice layer release MEMS structure provided by the invention, the gas stream that crystal column surface obtains very evenly, concentrates, surface flatness is higher, pure XeF can not occur 2Produce coarse surface during etch silicon.This method etch rate is very fast, and efficient is high, good uniformity.Supercritical carbon dioxide provides even etching environment, can corrode tiny and long and narrow structure, and be completely to the etching of sacrificial silicon layer, noresidue.This method collection etching and drying and one wet method can not occur and discharge the phenomenon that produces adhesion, can not destroy micro-structural, so productive rate are higher, are fit to produce in enormous quantities in the industry.
Description of drawings
Fig. 1 is the structural representation that discharges the system of MEMS structure through the etch silicon sacrifice layer provided by the invention;
Wherein: 1 is XeF 2Flow control valve, 2 is CO 2Flow control valve II, 3 is high-pressure pump, and 4 is first valve, and 5 is ballast box, and 6 is second valve, and 7 is heater strip, and 8 is reaction chamber, and 9 is needle valve, and 10 is spill cavity, and 11 is exhaust gas processing device, and 12 for filtering purification devices.
Fig. 2 is the structural representation through reaction chamber in the system of etch silicon sacrifice layer release MEMS structure provided by the invention;
Wherein: 21 is pressure sensor, and 22 is nozzle, and 23 is mask material, and 24 is silicon substrate, and 25 is bracing frame, and 26 is magnetic stirring apparatus, and 8 is reaction chamber.
The specific embodiment
For making the object of the invention, technical scheme and advantage clearer, below in conjunction with specific embodiment, and with reference to accompanying drawing, to further explain of the present invention.
The invention provides a kind of method through etch silicon sacrifice layer release MEMS structure, this method utilizes xenon difluoride as etching reaction gas, and supercritical carbon dioxide discharges sacrificial silicon layer as carrier gas.Carbon dioxide utilizes the distinctive character of its above-critical state to make xenon difluoride more even to the etching of silicon, and the smoothness of corrosion surface is higher, and etching is more complete.Discharge to discharge with traditional wet and compare with plasma, this method for releasing avoided wet method discharge in since stir or adhesion to the damage of device, can improve the uniformity of full wafer wafer, reaction rate is very fast, efficient is high, the time weak point makes XeF 2Etching becomes feasible production in enormous quantities technology.
As shown in Figure 1, Fig. 1 is the structural representation that discharges the system of MEMS structure through the etch silicon sacrifice layer provided by the invention.Wherein: CO 2The source provides complementary atmospheric carbon dioxide, and silicon chip is carried out the physics auxiliary etch, regulates etch rate; The adjustments of gas mixing ratio improves security simultaneously; XeF 2The source provides xenon difluoride gas, as reactive etch gas.XeF 2Flow control valve 1 and CO 2Flow control valve 2 is used to control CO 2And XeF 2Flow, adjustments of gas CO 2And XeF 2Mixing ratio.High-pressure pump 3 is used for CO 2And XeF 2Mist pressurize, and the mist after will pressurizeing gets in the ballast boxs 5 through first valve 4.Ballast box 5 is used to deposit CO 2And XeF 2High pressure mixed gas, this high pressure mixed gas gets in the reaction chambers 8 through second valve 6 and heater strip 7.Heater strip 7 is used for the CO with high pressure mixed gas 2Gas is heated to more than the critical-temperature.Reaction chamber 8, the XeF in the high pressure mixed gas 2In reaction chamber 8, sacrificial silicon layer is corroded, the pressure in ballast box 5 and reaction chamber 8 reaches poised state, and the needle valve 9 that is communicated with reaction chamber 8 and spill cavity 10 will be opened, and the mist in the reaction chamber 8 is sent into spill cavity 10.Spill cavity 10, after the pressure in the reaction chamber 8 surpasses setup pressure value, the mist in the reaction chamber 8 will spill in the spill cavity 10.Exhaust gas processing device 11 is used for tail gas is handled, and avoids contaminated environment.Filter and purification devices 12, be used to realize the separation of gas, liquid, slag and the purifying of carbon dioxide.
As shown in Figure 2, Fig. 2 is the structural representation through reaction chamber in the system of etch silicon sacrifice layer release MEMS structure provided by the invention.Pressure sensor 21, nozzle 22, mask 23, sacrificial silicon layer 24, support 25 and magnetic stirring apparatus 26 are installed in the said reaction chamber 8, and wherein: pressure sensor 21 is used for measuring the pressure of reaction chamber 8; Nozzle 22, high pressure mixed gas incides the mask 23 on the sacrificial silicon layer 24 through nozzle 22; Support 25 is used to hold the mask 23 on sacrificial silicon layer to be corroded 24 and the sacrificial silicon layer 24; Magnetic stirring apparatus 26 is used for accelerated corrosion speed, makes etching more even.Mask 23 is silica, photoresist or metal mask.
Based on the system through etch silicon sacrifice layer release MEMS structure provided by the invention illustrated in figures 1 and 2, the method through etch silicon sacrifice layer release MEMS structure provided by the invention comprises:
Step 1: open XeF 2Flow control valve 1 and CO 2Flow control valve 2, control CO 2And XeF 2Flow, adjustments of gas CO 2And XeF 2Mixing ratio;
Step 2: operation high-pressure pump 3, to CO 2And XeF 2Mist pressurize, get in the ballast boxs 5 through first valve 4;
Step 3: when ballast box 5 and reaction chamber 8 reach primary condition, second valve 6 is just opened, and allows CO 2And XeF 2Mist get in the reaction chamber 8;
Step 4: the pressure in ballast box 5 and reaction chamber 8 reaches poised state; The needle valve 9 that is communicated with reaction chamber 8 and spill cavity 10 will be opened; Gas in the reaction chamber 8 is sent in the spill cavity 10, and needle valve 9 was closed when the pressure in reaction chamber 8 was returned to initial pressure;
Step 5: the gas in the spill cavity 10 gets into the filtered pure makeup and puts 12 behind exhaust gas processing device 11, the carbon dioxide that from filter purification devices 12, comes out gets in the carbon dioxide storage tank once more.
Refer again to Fig. 1, technological process is: open XeF 2Flow control valve 1 and CO 2Flow control valve 2, control CO 2And XeF 2Flow, adjustments of gas CO 2And XeF 2Mixing ratio; Operation high-pressure pump 3 is to mist CO 2And XeF 2Pressurize, get in the ballast box 5 through first valve 4.The initial pressure of ballast box is 11MPa, and initial temperature is 50 ℃; The initial pressure of reaction chamber is 7.6MPa, and initial temperature is 50 ℃; When ballast box 5 and reaction chamber 8 reach primary condition, second valve 6 is just opened, and allows CO 2And XeF 2Mist get in the reaction chamber 8, before getting into reaction chamber 8, the heating through heater strip 7 makes that the carbon dioxide in the mist reaches supercritical temperature in the pipeline; This process lasts till that the pressure in ballast box 5 and the reaction chamber 8 reaches poised state; The needle valve 9 that is communicated with reaction chamber 8 and spill cavity 10 afterwards will be opened, and sends into the gas in the reaction chamber 8 in the spill cavity 10, and needle valve 9 was closed when the pressure in reaction chamber 8 was returned to 7.6MPa.Gas in the spill cavity 10 gets into the filtered pure makeup and puts 12 behind exhaust gas processing device 11, the carbon dioxide that from filter purification devices 12, comes out gets in the carbon dioxide storage tank recycle once more; Feed pure CO then 2Be used for taking out of reaction chamber 8 such as the residue of etching and some particles; Pressure in the pressure drop in the reaction chamber 8 to 7.6MPa and ballast box 5 is increased to 11MPa, repeats above step, and after circulating so several times, the dry method of just having accomplished sacrificial silicon layer discharges.
Refer again to Fig. 2, the process in the reaction chamber is: through pressure sensor 21 pressure in the reaction chamber 8 is maintained 7.6MPa, when mist gets in the reaction chamber 8, be blown into the silicon substrate 24 as sacrifice layer, XeF through nozzle 22 2Can resolve into the F group, generate volatile fluoride, discharge through needle valve 9 then with pasc reaction.Magnetic stirring apparatus 26 accelerated corrosion speed make corrosion more even, and surface flatness is higher.
Above-described specific embodiment; The object of the invention, technical scheme and beneficial effect have been carried out further explain, and institute it should be understood that the above is merely specific embodiment of the present invention; Be not limited to the present invention; All within spirit of the present invention and principle, any modification of being made, be equal to replacement, improvement etc., all should be included within protection scope of the present invention.

Claims (7)

1. one kind is passed through the system that the etch silicon sacrifice layer discharges the MEMS structure, it is characterized in that this system comprises:
CO 2The source is used to provide complementary atmospheric carbon dioxide, and silicon chip is carried out the physics auxiliary etch;
XeF 2The source is used to provide xenon difluoride gas, as reactive etch gas;
XeF 2Flow control valve (1) and CO 2Flow control valve (2) is used to control CO 2And XeF 2Flow, adjustments of gas CO 2And XeF 2Mixing ratio;
High-pressure pump (3) is used for CO 2And XeF 2Mist pressurize, and the mist after will pressurizeing gets in the ballast box (5) through first valve (4);
Ballast box (5) is used to deposit CO 2And XeF 2High pressure mixed gas, this high pressure mixed gas is through in second valve (6) and heater strip (7) the entering reaction chamber (8);
Heater strip (7) is used for the CO with high pressure mixed gas 2Gas is heated to more than the critical-temperature;
Reaction chamber (8), the XeF in the high pressure mixed gas 2In reaction chamber (8), sacrificial silicon layer is carried out etching; Pressure in ballast box (5) and reaction chamber (8) reaches poised state; The needle valve (9) that is communicated with reaction chamber (8) and spill cavity (10) will be opened, and the mist in the reaction chamber (8) is sent into spill cavity (10);
Spill cavity (10), after the pressure in the reaction chamber (8) surpasses setup pressure value, the mist in the reaction chamber (8) will spill in the spill cavity (10);
Exhaust gas processing device (11) is used for tail gas is handled, and avoids contaminated environment; And
Filter and purification devices (12), be used to realize the separation of gas, liquid, slag and the purifying of carbon dioxide.
2. the system that discharges the MEMS structure through the etch silicon sacrifice layer according to claim 1; It is characterized in that; Pressure sensor (21), nozzle (22), mask (23), sacrificial silicon layer (24), support (25) and magnetic stirring apparatus (26) are installed in the said reaction chamber (8), wherein:
Pressure sensor (21) is used for measuring the pressure of reaction chamber (8);
Nozzle (22), high pressure mixed gas incides the mask (23) on the sacrificial silicon layer (24) through nozzle (22);
Support (25) is used to hold the mask (23) on sacrificial silicon layer to be etched (24) and the sacrificial silicon layer (24);
Magnetic stirring apparatus (26) is used to quicken etch rate, makes etching more even.
3. the system through etch silicon sacrifice layer release MEMS structure according to claim 2 is characterized in that said mask (23) is silica, photoresist or metal mask.
4. one kind is passed through the method that the etch silicon sacrifice layer discharges the MEMS structure, it is characterized in that this method comprises:
Open XeF 2Flow control valve (1) and CO 2Flow control valve (2), control CO 2And XeF 2Flow, adjustments of gas CO 2And XeF 2Mixing ratio;
Operation high-pressure pump (3) is to CO 2And XeF 2Mist pressurize, get in the ballast box (5) through first valve (4);
When ballast box (5) and reaction chamber (8) reach primary condition, second valve (6) is just opened, and allows CO 2And XeF 2Mist get in the reaction chamber (8) XeF in the high pressure mixed gas 2In reaction chamber, sacrificial silicon layer is carried out etching; Wherein, at CO 2And XeF 2Mist to get into reaction chamber (8) preceding, the heating through heater strip (7) makes that the carbon dioxide in the mist reaches supercritical temperature in the pipeline; This process lasts till that the pressure in ballast box (5) and the reaction chamber (8) reaches poised state;
Pressure in ballast box (5) and reaction chamber (8) reaches poised state; The needle valve (9) that is communicated with reaction chamber (8) and spill cavity (10) will be opened; Gas in the reaction chamber (8) is sent in the spill cavity (10), and needle valve (9) was closed when the pressure in reaction chamber (8) was returned to initial pressure;
Gas in the spill cavity (10) gets into the filtered pure makeup and puts (12) behind exhaust gas processing device (11), the carbon dioxide that from filter purification devices (12), comes out gets in the carbon dioxide storage tank once more.
5. the method through etch silicon sacrifice layer release MEMS structure according to claim 4 is characterized in that the initial pressure in the ballast box (5) is 11MPa, and initial temperature is 50 ℃; The initial pressure of reaction chamber (8) is 7.6MPa, and initial temperature is 50 ℃.
6. the method through etch silicon sacrifice layer release MEMS structure according to claim 4 is characterized in that after said carbon dioxide got in the carbon dioxide storage tank once more, this method also comprised:
Feed pure CO 2Take the residue of etching out of reaction chamber (8) with some particles; Pressure in the pressure drop in the reaction chamber (8) to 7.6Mpa and ballast box (5) is increased to 11MPa; Repeat above step, after circulating so several times, the dry method of just accomplishing sacrificial silicon layer discharges.
7. the method through etch silicon sacrifice layer release MEMS structure according to claim 4 is characterized in that, works as CO 2And XeF 2Mist when getting in the reaction chamber (8), through pressure sensor (21) pressure in the reaction chamber (8) is maintained 7.6MPa, be blown into the silicon substrate (24) as sacrifice layer, XeF through nozzle (22) 2Can resolve into the F group, generate volatile fluoride, discharge through needle valve (9) then with pasc reaction; Magnetic stirring apparatus (26) quickens etch rate, makes etching more even, and surface flatness is higher.
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CN102275868B (en) * 2011-08-15 2014-02-19 中国人民解放军国防科学技术大学 Pre-buried mask wet etching process for silicon micro mechanical structure
CN104716018B (en) * 2013-12-13 2017-08-11 中芯国际集成电路制造(上海)有限公司 The color method and mixed solution of N traps and deep N-well
CN108550526A (en) * 2018-03-29 2018-09-18 上海集成电路研发中心有限公司 A method of improving semiconductor fin surface roughness
CN110292792A (en) * 2019-06-14 2019-10-01 瑞声科技(新加坡)有限公司 Inviscid etching drying means

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