CN102109730A - Nonlinear crystal frequency multiplier - Google Patents
Nonlinear crystal frequency multiplier Download PDFInfo
- Publication number
- CN102109730A CN102109730A CN2009101130444A CN200910113044A CN102109730A CN 102109730 A CN102109730 A CN 102109730A CN 2009101130444 A CN2009101130444 A CN 2009101130444A CN 200910113044 A CN200910113044 A CN 200910113044A CN 102109730 A CN102109730 A CN 102109730A
- Authority
- CN
- China
- Prior art keywords
- crystal
- bbo
- frequency
- laser
- crystals
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Landscapes
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
Abstract
The invention relates to a nonlinear crystal frequency multiplier. The nonlinear crystal frequency multiplier is manufactured as the followings steps: a BBO (barium boron oxide) crystal is rotated by 180 DEG in an incidence direction and symmetrically placed with another BBO crystal identical in angle and size, the included angle of the optical axes of the two crystals is twice of the phase matching angle, and the two crystals are prepared as an integral device in a bonding manner. The nonlinear crystal frequency multiplier can effectively compensate the walk-off effect of the BBO crystals, and meanwhile greatly reduce insertion loss added by laser passing through two separated BBO crystals and the threshold power of a laser.
Description
Technical field
The invention belongs to non-linear optical field in the laser technology, particularly relate to a kind of design and preparation of nonlinear crystal frequency doubling device.
Background technology
Laser is used widely in every field such as scientific research and national economy and national defence as the relevant monochromatic source of a kind of high strength, good directionality.Enter 21 century, laser technology has influenced even has changed people's production, life style day by day.
Yet present solid state laser can only be exported several wavelength isolated or that tuning range is narrower, simultaneously owing to the singularity of laser genesis mechanism, can not all search out a kind of laser medium of practicality for each wavelength.Therefore, the frequency transform techniques of research laser becomes the key of expanding the laser range of application.Nonlinear optical crystal is exactly a material base of realizing frequency transformation.When high-intensity laser passes through nonlinear optical medium, because high light makes medium produce the high order polarization, light frequency will change, under different experiment conditions, produce original laser frequency multiple, add and, even in wide frequency ranges very free tuning LASER Light Source.The range of application of LASER Light Source frequency has greatly been enriched in the application of nonlinear optical crystal, substantially realized from deep ultraviolet to the frequency of infrared (170nm-20 μ m) cover, it is with semiconductor laser and laser crystal, constituted the main flow direction of present laser technology research and industrialization, i.e. three of all solid state laser and technology big ingredients.
In the blue light solid state laser device preparation process, often adopt nonlinear crystal the 946nm fundamental wave of neodymium ion to be converted into the blue laser of 473nm.But because part nonlinear crystal (such as bbo crystal) deviation angle is bigger, the interaction length that produces effective frequency multiplication in the crystal is little, and in a single day the length of quartz crystal device surpass its interaction length, the obvious variation of beam quality meeting of laser, and efficient reduces.
People such as the Gao Lanlan of Changchun Institute of Optics, Fine Mechanics and Physics, CAS, in " two BBO intracavity frequency doublings are eliminated the influence of walk-off effect to laser instrument " (laser technology, the 27th the 3rd phase of volume, in June, 2003) propose in the article in preparation blue light DPL, in resonator cavity, adopt the BBO frequency-doubling crystal of two same sizes, and these two frequency-doubling crystals become 180 ° of placements.Because to do the phase matching angle of 473nm blue light be θ=25 ° to bbo crystal as seen from the above table, φ=0 °, that is to say that the optical axis of crystal and the angle of logical optical axis are 25 °, so two logical light faces are coaxial and angle that be mutually between the optical axis of frequency-doubling crystal of 180 ° of placements is 2 θ.Utilize the frequency doubled light walk-off effect of last crystal of back crystal compensation, improve the output facula quality.The deviation angle of the direction of propagation of energy of frequency doubled light and fundamental frequency light is ρ 1 in the 1st frequency-doubling crystal, and the deviation angle that produces in the 2nd frequency-doubling crystal is ρ 2, and their sizes are identical, but is distributed in the complete relative both sides of fundamental frequency optical propagation direction.Therefore, when fundamental frequency light passes through two frequency-doubling crystals, frequency doubled light at first in the 1st frequency-doubling crystal the opposite direction side to the optical axis of crystal be offset, the same again opposite direction side to the optical axis of crystal is offset when the 2nd frequency-doubling crystal, because the optical axis of two frequency-doubling crystals becomes symmetry to place with respect to coaxial logical optical axis, be all phase matching angle θ=25 ° with the angle of logical optical axis, just in time direction is opposite so twice of taking place in frequency-doubling crystal is offset, thereby has obtained compensation.Like this, after fundamental frequency light passes through two frequency-doubling crystals, not only increase the interaction length of fundamental frequency light and frequency doubled light, also improved the quality of frequency multiplication hot spot.This method has not only increased the effective interaction length of bbo crystal and has improved optical quality, for bbo crystal is used the prospect of having opened up in intracavity frequency doubling laser.
But there is a problem in present this method: owing to increased a nonlinear crystal newly in resonator cavity, increased the insertion loss of resonator cavity, improve the threshold value of laser instrument greatly, also increased the difficulty of crystal angular adjustment simultaneously, made laser design further complicated.
The purpose of this invention is to provide a kind of insertion loss that nonlinear crystal brought of increase in the resonator cavity that overcomes, reduce laser threshold, make things convenient for the frequency doubling device of the method for crystal angular adjustment simultaneously.
Summary of the invention
The present invention relates to a kind of nonlinear crystal frequency doubling device, it be with a bbo crystal behind optical direction Rotate 180 °, place with the bbo crystal symmetry of the same angle of another piece, size, this moment, two optical axis of crystal angles were the twice phase-matching angle, adopt the mode of bonding then, prepare the device that becomes one, and on two end faces of integrated device, be coated with the optical thin film of certain films system design.This bbo crystal frequency doubling device is compensating the bbo crystal walk-off effect simultaneously effectively, reduces greatly because the insertion loss that the bbo crystal of laser by two separation increases, and has reduced the threshold power of laser instrument.
Description of drawings
Fig. 1 is that prior art adopts two structural drawing that separate bbo crystal as frequency multiplier;
Fig. 2～5th, the structural drawing of a kind of bbo crystal frequency doubling device preparation process of employing patent of the present invention.
Embodiment
Below in conjunction with drawings and Examples patent of the present invention is further specified, as shown in Figure 2: A and B are 2 bbo crystals, its angle, size are consistent, be I saphe coupling (θ=25 °, φ=0 °), dimensions is 5 * 5 * 10mm3, and the abcd face constitutes the logical light face of A, and a ' b ' c ' d ' face constitutes the logical light face of B.
As shown in Figure 3: A behind optical direction Rotate 180 °, is placed with the B symmetry, and wherein c and a ', d and b ', a and c ', b are corresponding respectively with d '.
As shown in Figure 4: with postrotational A and B bonding, the frequency doubling device that preparation becomes one.
As shown in Figure 5: the two ends at the frequency doubling device of one are coated with 946nm and 473nm anti-reflection film.
Claims (1)
1. nonlinear crystal frequency doubling device, comprise two sizes, the bbo crystal that angle is all identical, wherein bbo crystal is placed with another piece bbo crystal symmetry behind optical direction Rotate 180 °, two optical axis of crystal angles are the twice phase-matching angle, it is characterized in that: two bbo crystals adopt the mode of bonding to combine.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009101130444A CN102109730A (en) | 2009-12-24 | 2009-12-24 | Nonlinear crystal frequency multiplier |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009101130444A CN102109730A (en) | 2009-12-24 | 2009-12-24 | Nonlinear crystal frequency multiplier |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102109730A true CN102109730A (en) | 2011-06-29 |
Family
ID=44173925
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2009101130444A Pending CN102109730A (en) | 2009-12-24 | 2009-12-24 | Nonlinear crystal frequency multiplier |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102109730A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102520561A (en) * | 2011-12-21 | 2012-06-27 | 中国科学院半导体研究所 | Preparation method of large thickness period polarization ferroelectric crystal material |
| CN103311793A (en) * | 2013-06-09 | 2013-09-18 | 中国科学院半导体研究所 | BBO (barium boron oxide) crystal based non-linear frequency doubler |
| CN107561814A (en) * | 2017-10-11 | 2018-01-09 | 福建科彤光电技术有限公司 | A kind of device for improving nonlinear crystal frequency switched laser optical quality |
-
2009
- 2009-12-24 CN CN2009101130444A patent/CN102109730A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102520561A (en) * | 2011-12-21 | 2012-06-27 | 中国科学院半导体研究所 | Preparation method of large thickness period polarization ferroelectric crystal material |
| CN102520561B (en) * | 2011-12-21 | 2013-12-25 | 中国科学院半导体研究所 | Preparation method of large thickness period polarization ferroelectric crystal material |
| CN103311793A (en) * | 2013-06-09 | 2013-09-18 | 中国科学院半导体研究所 | BBO (barium boron oxide) crystal based non-linear frequency doubler |
| CN103311793B (en) * | 2013-06-09 | 2015-11-18 | 中国科学院半导体研究所 | Based on frequency doubling non-linear's device of bbo crystal |
| CN107561814A (en) * | 2017-10-11 | 2018-01-09 | 福建科彤光电技术有限公司 | A kind of device for improving nonlinear crystal frequency switched laser optical quality |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN107340559B (en) | High efficiency and broad band circular polarization switching device and method based on super clever surface | |
| CN101950918B (en) | Self-frequency doubling green light solid-state laser suitable for laser display | |
| CN102074887A (en) | Self frequency conversion solid state laser based on neodymium doped gadolinium calcium oxborate crystal | |
| CN110768087B (en) | Polarization tunable terahertz wave radiation source | |
| CN103594914B (en) | A kind of yellow orange light laser based on self-frequency doubling laser crystal | |
| CN102983489A (en) | Intermediate infrared laser source produced based on non-linear difference frequency of optical laser | |
| CN103199429A (en) | All-solid-state short wave ultraviolet laser source | |
| Jin et al. | Wideband tunable graphene-based passively Q-switched Tm: YAP laser | |
| CN105958313A (en) | Laser pulse modulation device based on CrOCl crystal, and application thereof in all-solid-state laser | |
| CN104242044A (en) | Electro-optical double-refraction double-cavity double-frequency Nd:YAG laser device and frequency difference tuning method | |
| CN102109730A (en) | Nonlinear crystal frequency multiplier | |
| CN105071214A (en) | Method for producing deep ultraviolet laser light through visible laser direct frequency conversion and all-solid-state deep ultraviolet laser | |
| CN102074889B (en) | Single frequency visible laser | |
| Li et al. | A high-power, long-wavelength infrared ZnGeP 2 OPO pumped by a Q-switched Tm, Ho: GdVO 4 laser | |
| CN207780406U (en) | Fibre optic isolater | |
| CN209929676U (en) | Fast tunable intermediate infrared radiation source device based on external cavity difference frequency | |
| CN103311793B (en) | Based on frequency doubling non-linear's device of bbo crystal | |
| CN100438232C (en) | Quasi-continuous high power red, green double-wavelength laser with LD side pumping | |
| CN202737315U (en) | High-energy laser frequency-doubling Q-switching device | |
| CN110011177A (en) | A kind of electric light Radial Birefringent Q-switch | |
| CN201781186U (en) | Solid laser capable of outputting laser with high polarization ratio | |
| CN211528873U (en) | Device for generating terahertz waves by collinear circular polarization long-wave bicolor field | |
| CN102761057B (en) | A kind of intracavity frequency doubling 780 nano-solid laser | |
| Qi et al. | Cascaded third-harmonic-generation converter based on a single ADP crystal | |
| CN202749676U (en) | End-pumped dual-wavelength coaxial switching output laser device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20110629 |