CN102103921B - Stacked structure of spiral inductor - Google Patents
Stacked structure of spiral inductor Download PDFInfo
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- CN102103921B CN102103921B CN 200910253460 CN200910253460A CN102103921B CN 102103921 B CN102103921 B CN 102103921B CN 200910253460 CN200910253460 CN 200910253460 CN 200910253460 A CN200910253460 A CN 200910253460A CN 102103921 B CN102103921 B CN 102103921B
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Abstract
The invention discloses a stacked structure of a spiral inductor, which comprises a first metal layer, a second metal layer, a first group of vias and a second group of vias, wherein the first metal layer comprises a first line segment, a second line segment and a third line segment; the layout direction of the third line segment is different from those of the first and second line segments; the second metal layer comprises a fourth line segment, a fifth line segment and a six line segment; the sixth line segment is connected with the fifth line segment; the layout direction of the six line segment is different from those of the fourth and fifth line segments; the first group of vias are connected with the first and fourth line segments to form a first shunt winding; the second group of vias are connected with the second and fifth line segments to form a second shunt winding; and the third and sixth line segments form a crossover area.
Description
Technical field
The present invention relates to a kind of stacked structure of spiral inductance, especially relate to a kind of metal level in cross-line zone that utilizes and be used as coiling in parallel to promote the stacked structure of quality factor (quality factor).
Background technology
Along with IC makes towards system single chip (system on chip, SoC) future development, the passive devices such as integrated inductor (integrated inductor) or integrated transformer (integrated transformer) by extensive integration and making in high-frequency integrated circuit.Because IC makes the general structure that adopts silicon base, the substrate loss of integrated inductor/integrated transformer (substrate loss) and metal loss (metal loss) will determine the quality of its quality factor (quality factor), especially take metal loss as the most direct main cause that affects inductance characteristic.
Common integrated inductor comprises symmetric form spiral inductance and asymmetric spiral inductance at present, the superiors' (or going up two-layer most) metals that adopt are used as the coiling of inductance more, and use lower layer of metal and dielectric window (via) to be used as cross-line (crossover).The shortcoming of this kind inductance is electrical conductivity, the quantity of dielectric window and the resistance value of dielectric window that its dead resistance will be subject to this single-layer metal, cross-line.If improve the quality factor of inductance, be bound to such an extent that increase the live width that winds the line, but this practice will consume more chip area.Therefore, someone proposes to utilize the framework of multiple layer metal parallel connection, so that inductance under equal area, obtains lower series resistance than conventional monolayers inductance, be used for promoting quality factor, such as No. the 20080074229th, front case United States Patent (USP), No. 6664882 those disclosed herein of United States Patent (USP).Yet, no matter be the framework of single-layer metal framework or multiple layer metal parallel connection, the cross-line part of inductance all is to use the metal level that is different from inductance coiling itself, and can't make the quality factor of inductance reach optimization.
Summary of the invention
One of purpose of the present invention is to provide a kind of stacked structure of spiral inductance, to solve the problem in the background technology.
Embodiments of the invention have disclosed a kind of stacked structure of spiral inductance, include a first metal layer, one second metal level, one first group of dielectric window and one second group of dielectric window.The first metal layer comprises one first line segment, one second line segment and one the 3rd line segment, the 3rd segment link to the first line segment, and the layout direction of the 3rd line segment is different from the layout direction of this first line segment and the layout direction of this second line segment.The second layout of metallic layer is under the first metal layer, it includes one the 4th line segment, one the 5th line segment and one the 6th line segment, the 6th segment link to the five line segments, and the layout direction of the 6th line segment is different from the layout direction of the 4th line segment and the layout direction of the 5th line segment.First group of dielectric window connects the first line segment and the 4th line segment.Second group of dielectric window connects the second line segment and the 5th line segment.Wherein, one first coiling in parallel of the first line segment, the 4th line segment and first group of dielectric window formation spiral inductance, the second line segment, the 5th line segment and second group of dielectric window consist of one second coiling in parallel of spiral inductance, and the 3rd line segment and the 6th line segment to consist of one first cross-line regional.This spiral inductance is a symmetric form spiral inductance.
Embodiments of the invention have disclosed a kind of stacked structure of spiral inductance in addition, include a first metal layer, one second metal level, one first group of dielectric window and one second group of dielectric window.The first metal layer comprises one first line segment, one second line segment and one the 3rd line segment, the 3rd segment link to the first line segment and the second line segment and be in the layout of the first line segment and the second line segment between.The second metal level includes one the 4th line segment, one the 5th line segment and one the 6th line segment, and the 6th line segment is in the layout of between the 4th line segment and the 5th line segment.First group of dielectric window connects the first line segment and the 4th line segment.Second group of dielectric window connects the second line segment and the 5th line segment.Wherein, the first line segment and the 4th line segment consist of one first coiling in parallel of spiral inductance, one second coiling in parallel of the second line segment and the 5th line segment formation spiral inductance, and the 3rd line segment and the 6th line segment to consist of a cross-line regional.This spiral inductance is an asymmetric spiral inductance.
Description of drawings
Figure 1A, Figure 1B are the schematic diagram of embodiment of the stacked structure of spiral inductance of the present invention;
Fig. 2 is the top view of the example of symmetric form spiral inductance;
Fig. 3 is the longitudinal section that symmetric form spiral inductance shown in Figure 2 adopts the stacked structure of Figure 1A;
Fig. 4 is the longitudinal section that symmetric form spiral inductance shown in Figure 2 adopts the stacked structure of Figure 1B;
Fig. 5 is the top view in conjunction with an example of a symmetric form spiral inductance of series connection coiling and coiling in parallel;
Fig. 6 A, Fig. 6 B are the series connection coiling of symmetric form spiral inductance shown in Figure 5 and the schematic diagram of coiling in parallel;
Fig. 7 is the drawing in side sectional elevation that symmetric form spiral inductance shown in Figure 5 adopts the stacked structure of Figure 1A;
Fig. 8 is the drawing in side sectional elevation that symmetric form spiral inductance shown in Figure 5 adopts the stacked structure of Figure 1B;
Fig. 9 A, Fig. 9 B, Fig. 9 C, Fig. 9 D are the schematic diagram of another embodiment of the stacked structure of the present invention's one spiral inductance;
Figure 10 is the top view of the example of asymmetric spiral inductance;
Figure 11 A, Figure 11 B are the first coiling in parallel of asymmetric spiral inductance shown in Figure 10 and the schematic diagram of the second coiling in parallel;
Figure 12 is the drawing in side sectional elevation that asymmetric spiral inductance shown in Figure 10 adopts the stacked structure of Fig. 9 A;
Figure 13 is the drawing in side sectional elevation that asymmetric spiral inductance shown in Figure 10 adopts the stacked structure of Fig. 9 B;
Figure 14 is the drawing in side sectional elevation that asymmetric spiral inductance shown in Figure 10 adopts the stacked structure of Fig. 9 C.
The main element symbol description
100,200,900A, 900B, 900C, 900D spiral inductance
M16～M11、M26～M21、M36～M32、M46～M41、
MT1～MT6、M96A～M91A、M96B～M91B、
M96C～M91C、M96D～M91D、M126～M122、
M136～M132, M146～M141 metal level
110、210、310、410、910A、910B、
910C, 910D, 1210,1,410 first groups of dielectric windows
120、220、320、420、920A、920B、
920C, 920D, 1220,1,420 second groups of dielectric windows
360,460 the 3rd groups of dielectric windows
S11～S16、S21～S26、S31～S36、S41～S46、
S91A～S96A、S91B～S96B、S91C～S96C、
S91D～S96D, S121～S126, S141～S146 line segment
S37, S47 the first protective ring line segment
S38, S48 the second protective ring line segment
130、230、330、620、930A、
930B, 930C, 930D, 1,100 first coilings in parallel
140、240、340、630、940A、
940B, 940C, 940D, 1,200 second coilings in parallel
150、250、350、450、950A、950B、
950C, 950D, 1250,1350,1450 cross-lines zone
The A1 zone
350A, 450A, 1250A, 1450A first
350B, 450B, 1250B, 1450B second portion
300,500 symmetric form spiral inductances
YY ', KK ', CC ' dotted line
510 first inductance
610 second inductance
A, B, A ', B ' junction
520 first series connection coilings
530 second series connection coilings
1000 asymmetric spiral inductances
Embodiment
In following examples, (please refer to Figure 1A for symmetric form (symmetric) spiral inductance, the embodiment of Figure 1B to Fig. 8) and asymmetric (asymmetric) spiral inductance (please refer to Fig. 9 A, Fig. 9 B, Fig. 9 C, the embodiment of Fig. 9 D to Figure 14), the cross-line structure of the stacking spiral inductance of at least three kinds of multiple layer metals is proposed, mainly be divided into L-type cross-line structure (L-shape Crossover), staggered cross-line structure (Interdigitated Crossover) and ditching type cross-line structure (Trench-shapeCrossover) between finger can make the stacking spiral inductance of multiple layer metal obtain optimized quality factor.Wherein, " L-type cross-line structure ", " staggered cross-line structure between referring to " and terms such as " ditching type cross-line structures " are that the present invention defines it, only as name region every usefulness.In addition, the present invention proposes the obstructing capacity that stack protective ring (stacked guard ring) increases noise.
Please refer to Figure 1A, Figure 1B, Figure 1A, Figure 1B are the schematic diagram of an embodiment of the stacked structure of the present invention's one spiral inductance.Wherein, Figure 1A represents L-type cross-line structure, and Figure 1B represent to refer between staggered cross-line structure.In the present embodiment, staggered cross-line structure all is applied in the symmetric form spiral inductance between the finger shown in the L-type cross-line structure shown in Figure 1A and Figure 1B.Shown in Figure 1A, the stacked structure of spiral inductance 100 comprises six metal level M16～M11, one first group of dielectric window (via) 110 and one second group of dielectric window 120.Metal level M16～M14 comprises line segment S11, S12 and S13, its middle conductor S13 be connected to line segment S11 and be in the layout of line segment S11 and line segment S12 between.Metal level M13～M11 is in the layout of under metal level M16～M14, and it comprises line segment S14, S15 and S16, its middle conductor S16 be connected to line segment S15 and be in the layout of line segment S14 and line segment S15 between.First group of dielectric window 110 connecting line segment S11 and line segment S14, and second group of dielectric window 120 connecting line segment S12 and line segment S15.In the present embodiment, one first coiling (shunt winding) 130 in parallel of the line segment S11 of metal level M16～M14, the line segment S14 of metal level M13～M11 and first group of dielectric window 110 formation spiral inductance 100, one second coiling 140 in parallel of the line segment S12 of metal level M16～M14, the line segment S15 of metal level M13～M11 and second group of dielectric window 120 formation spiral inductance 100, and the line segment S16 of the line segment S13 of metal level M16～M14 and metal level M13～M11 consists of a cross-line (crossover) zone 150.
As shown in Figure 1B, the stacked structure of spiral inductance 200 comprises six metal level M26～M21, one first group of dielectric window 210 and one second group of dielectric window 220.Metal level M26, M24, M22 comprise line segment S21, S22 and S23, its middle conductor S23 be connected to line segment S21 and be in the layout of line segment S21 and line segment S22 between.Metal level M25, M23, M21 comprise line segment S24, S25 and S26, its middle conductor S26 be connected to line segment S25 and be in the layout of line segment S24 and line segment S25 between.First group of dielectric window 210 connecting line segment S21 and line segment S24, and second group of dielectric window 220 connecting line segment S22 and line segment S25.In present embodiment, one first coiling (shunt winding) 230 in parallel of the line segment S24 of the line segment S21 of metal level M26, M24, M22, metal level M25, M23, M21 and first group of dielectric window 210 formation spiral inductance 200, the line segment S25 of the line segment S22 of metal level M26, M24, M22, metal level M25, M23, M21 and second group of dielectric window 220 consist of one second coiling 240 in parallel of spiral inductances 200, and the line segment S26 of the line segment S23 of metal level M26, M24, M22 and metal level M25, M23, M21 consists of a cross-line zone 250.
Note that in the above-described embodiment take six metal levels as example, so this is not restrictive condition of the present invention, the number of metal level is not limited to.
Please refer to Fig. 2, Fig. 3 and Fig. 4, wherein Fig. 2 is the top view of an example of a symmetric form spiral inductance 300, Fig. 3 is the sectional arrangement drawing that symmetric form spiral inductance 300 shown in Figure 2 adopts the stacked structure of Figure 1A, and Fig. 4 is the sectional arrangement drawing that symmetric form spiral inductance 300 shown in Figure 2 adopts the stacked structure of Figure 1B.As shown in Figure 2, symmetric form spiral inductance 300 comprises the zone that indicates A1 among one first coiling 330 and 1 second coiling 340, the figure in parallel in parallel and then represents the cross-line zone.The vertical section of Fig. 3 YY ' dotted line that is symmetric form spiral inductance 300 in Fig. 2, it adopts the stacked structure of Figure 1A.As shown in Figure 3, the stacked structure of symmetric form spiral inductance 300 comprises five metal level M36～M32, one first group of dielectric window 310 and one second group of dielectric window 320.In the present embodiment, the first coiling 330 in parallel of the line segment S31 of metal level M36, the line segment S34 of metal level M35～M32 and first group of dielectric window 310 formation spiral inductance 300, the second coiling 340 in parallel of the line segment S32 of metal level M36, the line segment S35 of metal level M35～M32 and second group of dielectric window 320 formation spiral inductance 300, and the line segment S36 of the line segment S33 of metal level M36 and metal level M35～M32 consists of a cross-line zone 350 (including the 350A of first and second portion 350B).Can be learnt by Fig. 2 and Fig. 3, the layout direction of line segment S33 (consisting of the 350A of first in cross-line zone 350) is different from the layout direction of line segment S31, line segment S32, and the layout direction of line segment S36 (consisting of the second portion 350B in cross-line zone 350) also is different from the layout direction of line segment S34, line segment S35.
In addition, metal level M36 comprises the first protective ring line segment S37 in addition, is arranged at the outside of line segment S31 and/or line segment S32; Metal level M35～M32 comprises the second protective ring line segment S38 in addition, is arranged at the outside of line segment S34 and/or line segment S35; And this stacked structure comprises one the 3rd group of dielectric window 360 in addition, connects the first protective ring line segment S37 and the second protective ring line segment S38.Wherein, the first protective ring line segment S37, the second protective ring line segment S38 and the 3rd group of dielectric window 360 consist of stacked type protective ring (stackedguard ring), increase the obstructing capacity of noise.
Please note, in the present embodiment, because the thickness of metal level M36 is greater than the thickness of metal level M35～M32, so the 350A of first in cross-line zone 350 adopts single-layer metal (that is line segment S33 of metal level M36) to realize, and the second portion 350B in cross-line zone 350 adopts multiple-level stack metal (that is line segment S36 of metal level M35～M32) to realize, and metal level M35～M32 all is in the layout of under the metal level M36, in the hope of the symmetry of inductance.
The vertical section of Fig. 4 YY ' dotted line that is symmetric form spiral inductance 300 in Fig. 2, it adopts the stacked structure of Figure 1B.As shown in Figure 4, the stacked structure of symmetric form spiral inductance 300 comprises six metal level M46～M41, one first group of dielectric window 410 and one second group of dielectric window 420.In the present embodiment, metal level M46, M44, the line segment S41 of M42, metal level M45, M43, the first coiling 330 in parallel of the line segment S44 of M41 and first group of dielectric window 410 formation spiral inductance 300, metal level M46, M44, the line segment S42 of M42, metal level M45, M43, the second coiling 340 in parallel of the line segment S45 of M41 and second group of dielectric window 420 formation spiral inductance 300, and metal level M46, M44, the line segment S43 of M42 and metal level M45, M43, the line segment S46 of M41 consists of a cross-line zone 450 (including the 450A of first and second portion 450B).Can be learnt by Fig. 2 and Fig. 4, the layout direction of line segment S43 (consisting of the 450A of first in cross-line zone 450) is different from the layout direction of line segment S41, line segment S42, and the layout direction of line segment S46 (consisting of the second portion 450B in cross-line zone 450) is different from the layout direction of line segment S44, line segment S45.
In addition, metal level M46, M44, M42 comprise one first protective ring line segment S47 in addition, are arranged at the outside of line segment S41 and/or line segment S42; Metal level M45, M43, M41 comprise one second protective ring line segment S48 in addition, are arranged at the outside of line segment S44 and/or line segment S45; And this stacked structure comprises one the 3rd group of dielectric window 460 in addition, connects the first protective ring line segment S47 and the second protective ring line segment S48.Wherein, the first protective ring line segment S47, the second protective ring line segment S48 and the 3rd group of dielectric window 460 consist of the stacked type protective ring, increase the obstructing capacity of noise.
Please note, in the present embodiment, because metal level M46, M44, the thickness of M42 equals metal level M45, M43, the thickness of M41, so the 450A of first in cross-line zone 450 adopts multiple-level stack metal (that is metal level M46, M44, the line segment S43 of M42) realizes, and the second portion 450B in cross-line zone 450 also adopts multiple-level stack metal (that is metal level M45, M43, the line segment S46 of M41) realizes, and metal level M46, M44, M42 and metal level M45, M43, the alternate setting of M41 (interlaced) is in the hope of the symmetry of inductance.
Related description by above-mentioned Fig. 3 and Fig. 4 can be understood, and the configuration mode of spiral inductance of the present invention can according to the thickness of metal level, increase the symmetry of inductance.For example, the metal layer thickness in integrated circuit has not simultaneously, can adopt " L-type cross-line structure " (being Figure 1A or cross-line structure shown in Figure 3) to carry out the layout of circuit, to obtain better inductance symmetry.In addition, when the thickness of each metal level in the integrated circuit is all identical, can adopt " staggered cross-line structure between referring to " (being Figure 1B or cross-line structure shown in Figure 4) to carry out the layout of circuit, to obtain better inductance symmetry.
Can be learnt by the above embodiments, the stacked structure of the disclosed spiral inductance of the present invention, the metal level in its cross-line zone also is used as the coiling of inductance, so that the quality factor of inductance reach optimization.Thus, the dead resistance of spiral inductance will no longer be subject to the electrical conductivity of cross-line, the quantity of dielectric window and the resistance value of dielectric window.
Please refer to Fig. 5 to Fig. 6 A, Fig. 6 B, Fig. 5 is the top view in conjunction with an example of a symmetric form spiral inductance 500 of series connection coiling and coiling in parallel, and Fig. 6 A, Fig. 6 B are first inductance 510 (Fig. 6 A) of symmetric form spiral inductance 500 shown in Figure 5 and the schematic diagram of the second inductance 610 (Fig. 6 B).Symmetric form spiral inductance 500 is the multiple-level stack spiral inductance in conjunction with the first inductance 510 (that is series connection coiling) and the second inductance 610 (that is coiling in parallel), can under identical area, increase the series inductance value, so that the chip area utilance increases.As shown in Figure 6A, the first inductance 510 is traditional individual layer symmetric form spiral inductance, MT1 is used as coil-winding with metal level, be used as the cross-line zone with metal level MT2, wherein junction A, the B of the first series connection coiling the 520 and second series connection coiling 530 are the centre cap (center tap) of the first inductance 510, junction A, B are disconnected, can down be connected to the centre cap (that is junction A ', B ' of first coiling the 620 and second coiling 630 in parallel in parallel) of the second inductance 610.The second inductance 610 of Fig. 6 B then can adopt the stacked structure (that is L-type cross-line structure) of Figure 1A or the stacked structure of Figure 1B (that is between referring to staggered cross-line structure) to realize, it is used as coil-winding and cross-line zone with metal level MT3, MT4, MT5, MT6, and wherein self is parallel for metal level MT1, MT2, MT3, MT4, MT5, MT6.
Please refer to Fig. 7, the vertical section of Fig. 7 KK ' dotted line that is symmetric form spiral inductance 500 in Fig. 5, it adopts the stacked structure of Figure 1A.As shown in Figure 7, symmetric form spiral inductance 500 comprises the first inductance 510 and the second inductance 610.In the present embodiment, the first inductance 510 is used as coil-winding (comprising the first series connection coiling the 520 and second series connection coiling 530) with metal level MT1, is used as the cross-line zone with metal level MT2; The second inductance 610 then adopts the L-type cross-line structure of Figure 1A, and wherein metal level MT3, MT4 can correspond to metal level M16～M14 of Figure 1A, and metal level MT5, MT6 can correspond to metal level M13～M11 of Figure 1A.
Please refer to Fig. 8, the vertical section of Fig. 8 symmetric form spiral inductance 500 KK ' dotted line in Fig. 5, it adopts the stacked structure of Figure 1B.As shown in Figure 8, symmetric form spiral inductance 500 comprises the first inductance 510 and the second inductance 610.In the present embodiment, staggered cross-line structure between the finger of 610 employings of the second inductance Figure 1B, wherein metal level MT3, MT5 can correspond to metal level M26, M24, the M22 of Figure 1B, and metal level MT4, MT6 can correspond to metal level M25, M23, the M21 of Figure 1B.
Please refer to Fig. 9 A, Fig. 9 B, Fig. 9 C, Fig. 9 D, Fig. 9 A, Fig. 9 B, Fig. 9 C, Fig. 9 D are the schematic diagram of another embodiment of the stacked structure of the present invention's one spiral inductance.Wherein, Fig. 9 A, Fig. 9 B represent ditching type cross-line structure, and Fig. 9 C, Fig. 9 D represent to refer between staggered cross-line structure.In present embodiment, the cross-line structure shown in Fig. 9 A, Fig. 9 B, Fig. 9 C and Fig. 9 D all is applied to an asymmetric spiral inductance.Shown in Fig. 9 A, the stacked structure of spiral inductance 900A comprises six metal level M96A～M91A, one first group of dielectric window 910A and one second group of dielectric window 920A.Metal layer by layer M96A～M94A comprises line segment S91A, S92A, S93A, its middle conductor S93A be connected to line segment S91A and line segment S92A and be in the layout of line segment S91A and line segment S92A between.Metal level M93A～M91A comprises line segment S94A, S95A, S96A, and its middle conductor S96A is in the layout of between line segment S94A and the line segment S95A.First group of dielectric window 910A connecting line segment S91A and line segment S94A, second group of dielectric window 920A connecting line segment S92A and line segment S95A.Wherein, the line segment S91A of metal level M96A～M94A and the line segment S94A of metal level M93A～M91A consist of the one first coiling 930A in parallel of spiral inductance 900A, the line segment S92A of metal level M96A～M94A and the line segment S95A of metal level M93A～M91A consist of the one second coiling 940A in parallel of spiral inductance 900A, and line segment S93A consists of the regional 950A of a cross-line with line segment S96A.And the stacked structure of the spiral inductance 900A of the stacked structure of the spiral inductance 900B of Fig. 9 B and Fig. 9 A is similar, and both differences are that the stacked structure of spiral inductance 900B is the inversion of the stacked structure of spiral inductance 900A.In other words, in Fig. 9 A, metal level M96A～M94A is in the layout of the top of metal level M93A～M91A, and in Fig. 9 B, metal level M93B～M91B is in the layout of the below of metal level M96B～M94B.
Shown in Fig. 9 C, the stacked structure of spiral inductance 900C comprises six metal level M96～M91C, one first group of dielectric window 910C and one second group of dielectric window 920C.Metal layer by layer M96C, M94C, M92C comprises line segment S91C, S92C, S93C, its middle conductor S93C be connected to line segment S91C and line segment S92C and be in the layout of line segment S91C and line segment S92C between.Metal layer by layer M95C, M93C, M91C comprises line segment S94C, S95C, S96C, and its middle conductor S96C is in the layout of between line segment S94C and the line segment S95C.First group of dielectric window 910C connecting line segment S91C and line segment S94C, second group of dielectric window 920C connecting line segment S92C and line segment S95C.Wherein, the line segment S91C of metal level M96C, M94C, M92C and the line segment S94C of metal level M95C, M93C, M91C consist of the one first coiling 930C in parallel of spiral inductance 900C, the line segment S95C of metal level gold thread section S92C and metal level M95C, M93C, M91C consists of the one second coiling 940C in parallel of spiral inductance 900C, and the line segment S96C of the line segment S93C of metal level M96C, M94C, M92C and metal level M95C, M93C, M91C consists of the regional 950C of a cross-line.And the stacked structure of the spiral inductance 900C of the stacked structure of the spiral inductance 900D of Fig. 9 D and Fig. 9 C is similar, and both differences are that the stacked structure of spiral inductance 900D is the inversion of the stacked structure of spiral inductance 900C.
Please refer to Figure 10 and Figure 11 A, Figure 11 B, Figure 10 is the top view of an example of an asymmetric spiral inductance 1000, and Figure 11 A, Figure 11 B then are the first coiling 1100 (Figure 11 A) in parallel of asymmetric spiral inductance 1000 shown in Figure 10 and the schematic diagram of the second coiling in parallel 1200 (Figure 11 B).
Please refer to Figure 12, the cross section of Figure 12 CC ' dotted line that is asymmetric spiral inductance 1000 in Figure 10, it adopts the stacked structure of Fig. 9 A.As shown in figure 12, the stacked structure of asymmetric spiral inductance 1000 comprises five metal level M126～M122, one first group of dielectric window 1210 and one second group of dielectric window 1220.In present embodiment, the first coiling 1100 in parallel of the line segment S121 of metal level M126, the line segment S124 of metal level M125～M122 and first group of dielectric window 1210 formation spiral inductance 1000, the second coiling 1200 in parallel of the line segment S122 of metal level M126, the line segment S125 of metal level M125～M122 and second group of dielectric window 1220 formation spiral inductance 1000, and the line segment S126 of the line segment S123 of metal level M126 and metal level M125～M122 consists of a cross-line zone 1250 (including the 1250A of first and second portion 1250B).
Please note, in the present embodiment, because the thickness of metal level M126 is greater than the thickness of metal level M125～M122, so the 1250A of first in cross-line zone 1250 adopts single-layer metal (that is line segment S123 of metal level M126) to realize, and the second portion 1250B in cross-line zone 1250 adopts multiple-level stack metal (that is line segment S126 of metal level M125～M122) to realize, and metal level M125～M122 all is in the layout of under the metal level M36, in the hope of the symmetry of inductance.
Please refer to Figure 13, the cross section of Figure 13 CC ' dotted line that is asymmetric spiral inductance 1000 in Figure 10, it adopts the stacked structure of Fig. 9 B.The stacked structure of Figure 13 and Figure 12 is similar, and both differences are that the stacked structure of Figure 13 is the inversion of the stacked structure of Figure 12.
Please refer to Figure 14, the cross section of Figure 14 CC ' dotted line that is asymmetric spiral inductance 1000 in Figure 10, it adopts the stacked structure of Fig. 9 C.As shown in figure 14, the stacked structure of asymmetric spiral inductance 1000 comprises six metal level M146～M141, one first group of dielectric window 1410 and one second group of dielectric window 1420.In present embodiment, metal level M146, M144, the line segment S141 of M142, metal level M145, M143, the first coiling 1100 in parallel of the line segment S144 of M141 and first group of asymmetric spiral inductance 1000 of dielectric window 1410 formations, metal level M146, M144, the line segment S142 of M142, metal level M145, M143, the second coiling 1200 in parallel of the line segment S145 of M141 and second group of dielectric window 1420 formation spiral inductance 1000, and metal level M146, M144, the line segment S143 of M142 and metal level M145, M143, the line segment S146 of M141 consists of a cross-line zone 1450 (including the 1450A of first and second portion 1450B).
Please note, in the present embodiment, because metal level M146, M144, the thickness of M142 equals metal level M145, M143, the thickness of M141, so the 1450A of first in cross-line zone 1450 adopts multiple-level stack metal (that is metal level M146, M144, the line segment S143 of M142) realizes, and the second portion 1450B in cross-line zone 1450 also adopts multiple-level stack metal (that is metal level M145, M143, the line segment S146 of M141) realizes, and metal level M146, M144, M142 and metal level M145, M143, the alternate setting of M141 is in the hope of the symmetry of inductance.Certainly, also can adopt the stacked structure of Fig. 9 D to realize, because its stacked structure only is the inversion of Figure 14, for for purpose of brevity, not repeat them here.
Certainly, also can adopt aforesaid stack protective ring to increase the obstructing capacity of noise.In addition, in the above-described embodiment, the shape of the first coiling in parallel coiling in parallel with second is take rectangle and octangle (octagon) as example, and so this is not restrictive condition of the present invention, and the stacked structure of the disclosed spiral inductance of the present invention is applicable to various shapes.
Above-described embodiment only is used for technical characterictic of the present invention is described, is not to limit to category of the present invention.As from the foregoing, the invention provides a kind of stacked structure of spiral inductance, it utilizes the metal level in cross-line zone to be used as coiling in parallel, can make the stacking spiral inductance of multiple layer metal obtain optimized quality factor.Moreover, the having wide range of applications of the stacked structure of the disclosed spiral inductance of the present invention, it can be applicable to symmetric form spiral inductance and asymmetric spiral inductance.And for the metal level of different-thickness, different cross-line structures is also proposed, in the hope of the symmetry of inductance.In addition, the present invention proposes the obstructing capacity that stack protective ring (stacked guard ring) increases noise.
The above only is preferred embodiment of the present invention, and all equalizations of doing according to claim of the present invention change and modify, and all should belong to covering scope of the present invention.
Claims (21)
1. the stacked structure of a spiral inductance includes:
The first metal layer includes:
The first line segment;
The second line segment; And
The 3rd line segment is connected to this first line segment, and the layout direction of the 3rd line segment is different from the layout direction of this first line segment and the layout direction of this second line segment;
The second metal level is in the layout of under this first metal layer, and this second metal level includes:
The 4th line segment;
The 5th line segment; And
The 6th line segment is connected to the 5th line segment, and the layout direction of the 6th line segment is different from the layout direction of the 4th line segment and the layout direction of the 5th line segment;
First group of dielectric window connects this first line segment and the 4th line segment; And
Second group of dielectric window connects this second line segment and the 5th line segment;
Wherein, this first line segment, the 4th line segment and this first group of dielectric window consist of one first coiling in parallel; This second line segment, the 5th line segment and this second group of dielectric window consist of one second coiling in parallel; And the 3rd line segment and the 6th line segment consist of cross-line zone.
2. the stacked structure of spiral inductance as claimed in claim 1, wherein the 3rd line segment is in the layout of between this first line segment and this second line segment, and the 6th line segment is in the layout of between the 4th line segment and the 5th line segment.
3. the stacked structure of spiral inductance as claimed in claim 1, wherein the thickness of this first metal layer is greater than the thickness of this second metal level.
4. the stacked structure of spiral inductance as claimed in claim 3, wherein this spiral inductance also comprises one the 3rd layout of metallic layer in this second metal level below, the structure of the 3rd metal level is identical with the structure of this second metal level, and the thickness of this first metal layer is greater than the thickness of the 3rd metal level.
5. the stacked structure of spiral inductance as claimed in claim 1, wherein the thickness of this first metal layer equals the thickness of this second metal level.
6. the stacked structure of spiral inductance as claimed in claim 1, wherein this spiral inductance also comprises:
The 3rd layout of metallic layer is in this second metal level below, and the structure of the 3rd metal level is identical with the structure of this first metal layer; And
The 4th layout of metallic layer is in the 3rd metal level below, and the structure of the 4th metal level is identical with the structure of this second metal level;
Wherein, one the 8th line segment, the 3rd line segment and the 6th line segment of one the 7th line segment of the 3rd metal level, the 4th metal level consist of this cross-line zone that another cross-line zone consists of to substitute the 3rd line segment and the 6th line segment; And the 3rd line segment, the 6th line segment, the 7th line segment and the 8th line segment consist of staggered cross-line structure between a finger.
7. the stacked structure of spiral inductance as claimed in claim 1, wherein:
This first metal layer comprises the first protective ring line segment in addition, is arranged at the outside of this first line segment or this second line segment;
This second metal level comprises the second protective ring line segment in addition, is arranged at the outside of the 4th line segment or the 5th line segment; And
This stacked structure comprises the 3rd group of dielectric window in addition, connects this first protective ring line segment and this second protective ring line segment, and this first protective ring line segment, this second protective ring line segment and the 3rd group of dielectric window consist of the stacked type protective ring.
8. the stacked structure of spiral inductance as claimed in claim 1, wherein this spiral inductance is the symmetric form spiral inductance.
9. the stacked structure of spiral inductance as claimed in claim 1, wherein this first coiling in parallel is essentially rectangle, octangle or circle with the shape of this second coiling in parallel.
10. the stacked structure of a spiral inductance includes:
The first metal layer includes:
The first line segment;
The second line segment; And
The 3rd line segment, be connected to this first line segment and this second line segment and be in the layout of this first line segment and this second line segment between;
The second metal level includes:
The 4th line segment;
The 5th line segment; And
The 6th line segment, be in the layout of between the 4th line segment and the 5th line segment and not with the 4th line segment and the 5th segment link;
First group of dielectric window connects this first line segment and the 4th line segment; And
Second group of dielectric window connects this second line segment and the 5th line segment;
Wherein, this first line segment and the 4th line segment consist of the first coiling in parallel, and this second line segment and the 5th line segment consist of the second coiling in parallel of this spiral inductance, and the 3rd line segment and the 6th line segment to consist of a cross-line regional.
11. the stacked structure of spiral inductance as claimed in claim 10, wherein this second layout of metallic layer is in the top of this first metal layer.
12. the stacked structure of spiral inductance as claimed in claim 10, wherein this first metal layer is in the layout of the top of this second metal level.
13. the stacked structure of spiral inductance as claimed in claim 10, wherein the thickness of this first metal layer is greater than the thickness of this second metal level.
14. the stacked structure of spiral inductance as claimed in claim 13, wherein this spiral inductance is in the layout of and also comprises the 3rd metal level, the structure of the 3rd metal level is identical with the structure of this second metal level, the 3rd metal level and this second metal level all be in the layout of on this first metal layer or under, and the thickness of this first metal layer is greater than the thickness of the 3rd metal level.
15. the stacked structure of spiral inductance as claimed in claim 10, wherein the thickness of this first metal layer equals the thickness of this second metal level.
16. the stacked structure of spiral inductance as claimed in claim 10, wherein this spiral inductance also comprises:
The 3rd metal level, and the structure of the 3rd metal level is identical with the structure of this first metal layer; And
The 4th metal level, and the structure of the 4th metal level is identical with the structure of this second metal level;
Wherein, one the 8th line segment, the 3rd line segment and the 6th line segment of the 7th line segment of the 3rd metal level, the 4th metal level consist of this cross-line zone that another cross-line zone consists of to substitute the 3rd line segment and the 6th line segment; And the 3rd line segment, the 6th line segment, the 7th line segment and the 8th line segment consist of staggered cross-line structure between a finger.
17. the stacked structure of spiral inductance as claimed in claim 16, wherein this second layout of metallic layer is under this first metal layer, and the 3rd layout of metallic layer is under this second metal level, and the 4th layout of metallic layer is under the 3rd metal level.
18. the stacked structure of spiral inductance as claimed in claim 16, wherein this first metal layer is in the layout of under this second metal level, and the 4th layout of metallic layer is under this first metal layer, and the 3rd layout of metallic layer is under the 4th metal level.
19. the stacked structure of spiral inductance as claimed in claim 10, wherein:
This first metal layer comprises the first protective ring line segment in addition, is arranged at the outside of this first line segment or this second line segment;
This second metal level comprises the second protective ring line segment in addition, is arranged at the outside of the 4th line segment or the 5th line segment; And
This stacked structure comprises the 3rd group of dielectric window in addition, connects this first protective ring line segment and this second protective ring line segment, and this first protective ring line segment, this second protective ring line segment and the 3rd group of dielectric window consist of the stacked type protective ring.
20. the stacked structure of spiral inductance as claimed in claim 10, wherein this spiral inductance is asymmetric spiral inductance.
21. the stacked structure of spiral inductance as claimed in claim 10, wherein this first coiling in parallel with this second in parallel wind the line be shaped as rectangle, octangle or circle.
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| CN102446896A (en) * | 2011-11-08 | 2012-05-09 | 上海华力微电子有限公司 | Spiral intermetallic capacitor structure and layout thereof |
| CN106972009B (en) * | 2016-01-13 | 2020-06-12 | 瑞昱半导体股份有限公司 | Integrated inductance structure |
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| US7095307B1 (en) * | 2003-07-17 | 2006-08-22 | Broadcom Corporation | Fully differential, high Q, on-chip, impedance matching section |
| CN1889265A (en) * | 2006-07-20 | 2007-01-03 | 上海交通大学 | Silicon-base multi-layer helical differential inductance |
| CN201000807Y (en) * | 2007-02-05 | 2008-01-02 | 威盛电子股份有限公司 | Symmetric difference inductance structure |
| CN101106129A (en) * | 2006-07-14 | 2008-01-16 | 盛群半导体股份有限公司 | Integrated circuit spiral inductance with high-quality factor |
| US7633368B2 (en) * | 2006-10-02 | 2009-12-15 | Via Technologies, Inc. | On-chip inductor |
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| US7095307B1 (en) * | 2003-07-17 | 2006-08-22 | Broadcom Corporation | Fully differential, high Q, on-chip, impedance matching section |
| CN101106129A (en) * | 2006-07-14 | 2008-01-16 | 盛群半导体股份有限公司 | Integrated circuit spiral inductance with high-quality factor |
| CN1889265A (en) * | 2006-07-20 | 2007-01-03 | 上海交通大学 | Silicon-base multi-layer helical differential inductance |
| US7633368B2 (en) * | 2006-10-02 | 2009-12-15 | Via Technologies, Inc. | On-chip inductor |
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