CN102103106B - Manufacturing method of three-leg catalytic micro gas sensor with temperature modulation - Google Patents
Manufacturing method of three-leg catalytic micro gas sensor with temperature modulation Download PDFInfo
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- CN102103106B CN102103106B CN200910073456XA CN200910073456A CN102103106B CN 102103106 B CN102103106 B CN 102103106B CN 200910073456X A CN200910073456X A CN 200910073456XA CN 200910073456 A CN200910073456 A CN 200910073456A CN 102103106 B CN102103106 B CN 102103106B
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Abstract
The invention provides a micromachining and manufacturing method of a gas sensor with temperature modulation. After a single crystal silicon wafer is subjected to dry oxidation by adopting an IC (Integrated Circuit) process, a silicon nitride dielectric isolation layer and an aluminum oxide dielectric isolation layer are deposited, and a platinum film is deposited by utilizing a sputtering process; patterns are copied on the other side of the single crystal silicon wafer, and a silicon cup is micromachined; a mask is subjected to photoetching and the platinum film is etched by using ion beams to form a gas sensitive unit, a gas compensation unit and a temperature sensitive unit resistor; the mask is subjected to photoetching, and an aluminum oxide layer, a silicon nitride layer, a silicon oxide layer and single crystal silicon are subjected to wet etching in sequence to form a plurality of three-leg chip units; internal leads are welded; aluminum oxide catalytic carrier slurry is coated and sintered; and a catalyst and a desensitizer are coated and subjected to thermal treatment at high temperature to form a gas sensitive chip. The method settles the problems which are present in a catalytic gas sensor owing to manual operation, realizes the integration of a plurality of sensitive units of the sensor, raises the consistency, the reliability and the detection precision of the sensor, and lowers the power consumption.
Description
(1) technical field
The invention belongs to sensor and manufacture field, specially refer to a kind of three brachium pontis catalysis type micro-gas sensors manufacture methods with temperature modulation.
(2) background technology
The principle of catalyst combustion gas sensor is in combustible gas sensor family, and function admirable is most widely used a class sensor.There is following problem in conventional catalyst combustion-type sensor, and affects its performance and application.(1) manual coiling, make responsive heating resistor and compensating resistance, causes the coiling resistance inconsistent, makes sensitive resistance and compensating resistance matching bad, and the sensor zero point output difference opposite sex is larger.(2) conventional catalyst combustion-type sensor can only lean on manual operation, and the batch making difficulty is large, and interchangeability is bad.(3) power consumption is large, not easy of integration.(4) interference of environment temperature to sensor, the matched well elimination that can only lean on sensing unit and compensating unit, and manual operations is difficult to realize good matching, thereby variation of ambient temperature is to cause a reason of sensor error.
The catalytic gas sensor of micro-three bridge arm structures that adopt the micro-processing of silicon and plane IC technique to produce, there are the sensitive resistance of making and compensating resistance high conformity, matching is strong, volume is little, power consumption is relatively low characteristics, simultaneously due to integrated platinum responsive to temperature unit, thereby gas sensor itself has environment temperature modulation and compensate function, effectively improve the accuracy of detection of gas sensor.
The beneficial effect of the inventive method is to realize the batch making catalytic gas sensor that automaticity is higher.Sensitive resistance and compensating resistance that this method is made have solved the problem that conventional catalyst formula gas sensor method for making exists aspect resistance consistance and matching, simultaneously integrated with platinum responsive to temperature unit, make sensor there is environment temperature modulation and compensate function, simultaneously because sensor reduces relatively aspect volume, thereby aspect power consumption, certain reduction is also arranged.
(3) summary of the invention
The objective of the invention is the following problem existed in order to solve the conventional catalyst sensor: (1) is coiling manually, make responsive heating resistor and compensating resistance, cause the coiling resistance inconsistent, make sensitive resistance and compensating resistance matching bad, the sensor zero point output difference opposite sex is larger.(2) conventional catalyst combustion-type sensor can only lean on manual operation, and the batch making difficulty is large, and interchangeability is bad.(3) power consumption is large, not easy of integration.(4) interference of environment temperature to sensor, the matched well elimination that can only lean on sensing unit and compensating unit.
The object of the present invention is achieved like this:
A, employing planar I C technique are after the monocrystalline silicon piece polished surface carries out dry method (or wet method) oxidation, at a side deposited silicon nitride buffer layer, utilize sputter (plasma deposition or electron beam evaporation) deposition alundum (Al2O3) medium transition bed on silicon nitride layer.
B, employing flat film sputtering technology, the micron-sized platinum film of deposition on alundum (Al2O3) medium transition bed.
C, at monocrystalline silicon piece polished surface opposite side (back side) copy pattern, wet etching and form silicon cup.
D, at the platinum film face of deposition, the mask lithography copy pattern, utilize ion beam (or plasma) etching platinum film, forms the heating resistor of gas sensitization unit and gas compensating unit, simultaneously the formation temperature sensing unit.Then, on the alundum (Al2O3) transition bed exposed, the mask lithography copy pattern, successively wet etching alundum (Al2O3) transition bed, silicon nitride medium separation layer, silica medium separation layer, monocrystalline silicon form the chip unit of three brachium pontis on silicon chip.
E, at the platinum electrode exit, utilize coating process to carry out the electrode aurification, with gold ball bonding connection (or slurry welding, parallel welding) welding internal lead.
F, on the brachium pontis of sensing unit and compensating unit coating nanometer powder alundum (Al2O3) catalytic carrier slurry respectively, sintering curing.Coating catalyst and go quick dose respectively on catalytic carrier after sintering, form catalysis type gas sensitization chip after high-temperature heat treatment.
G, base and the shell encapsulation for chip of making
The present invention can also comprise some features like this:
1, the platinum film thickness of described employing flat film sputtering technology deposition is between the 0.5-2 micron, and platinum film purity is greater than 99%.
2, the heating resistor of described gas sensitization unit and gas compensating unit, resistance is between 2～100 ohm; Responsive to temperature unit thermometric resistance is between 10-1000 ohm.
3, described responsive to temperature unit can be placed on middle brachium pontis, also can be placed on a side brachium pontis.
4, described alundum (Al2O3) catalytic carrier nano-powder granularity is in the 20-80 nanometer range, and sintering temperature is 600-800 ℃ of scope, coating catalyst and go quick dose of after-baking temperature 300-800 ℃ of scope.
5, the structure of described encapsulating package is three independently chambers, difference corresponding sensing unit, compensating unit and responsive to temperature unit, and chamber top has the breeder tube of different size, and requires the hole on sensing unit to be greater than the hole on compensating unit.The diameter in hole is between 0.2-1mm
(4) accompanying drawing explanation
Three brachium pontis catalysis type micro-gas sensors preparation technology process flow diagrams of Fig. 1 band temperature modulation
Fig. 2 tri-brachium pontis catalytic gas transducer schematic diagram
Fig. 3 tri-brachium pontis catalytic gas transducer package casing schematic diagram
(5) embodiment
With reference to Fig. 1, mean the three brachium pontis catalysis type micro-gas sensors preparation technology process flow diagrams with temperature modulation, this flow process sums up by following processing step and forms: Wafer Cleaning-silicon chip-silicon nitride deposition-alundum (Al2O3) deposits-deposits platinum film-backside mask photoetching copy pattern-back side wet etching-cleaning-front mask lithography copy pattern-front ion beam etching-front mask lithography copy pattern-wet etching-cleaning-electrode aurification-chip separation-gold ball bonding quick dose-thermal treatment-assembling-encapsulation of catalytic carrier-sintering-painting catalyzer-obliterate that goes between-be coated with.Manufacture method between each work step can be carried out combination in any according to specific requirement.
Embodiment is as follows:
A, employing planar I C technique are after the monocrystalline silicon piece polished surface carries out dry method (or wet method) oxidation, at a side deposited silicon nitride buffer layer, utilize sputter (plasma deposition or electron beam evaporation) deposition alundum (Al2O3) medium transition bed on silicon nitride layer.
B, employing flat film sputtering technology, deposition 0.5-2 micron thick platinum film on alundum (Al2O3) medium transition bed, platinum film purity is greater than 99%.
C, at monocrystalline silicon piece polished surface opposite side (back side) copy pattern, wet etching and form 3 silicon cups.
D, the deposition the platinum film face, the mask lithography copy pattern, utilize ion beam (or plasma) etching platinum film, form the heating resistor of gas sensitization unit and gas compensating unit, resistance between 2～100 ohm, formation temperature sensing unit simultaneously, resistance is between 10-1000 ohm.Then, on the alundum (Al2O3) transition bed exposed, the mask lithography copy pattern, successively wet etching alundum (Al2O3) transition bed, silicon nitride medium separation layer, silica medium separation layer, monocrystalline silicon form the chip unit of three brachium pontis on silicon chip.
E, at the platinum electrode exit, utilize coating process to carry out the electrode aurification, with gold ball bonding connection (or slurry welding, parallel welding) welding internal lead.
F, on the brachium pontis of sensing unit and compensating unit respectively the coating nanometer powder granularity at the alundum (Al2O3) catalytic carrier slurry of 20-80 nanometer range, at 600-800 ℃ of lower sintering.Coating catalyst and go quick dose respectively on catalytic carrier after sintering, form catalytic gas transducer after high temperature 300-800 ℃ thermal treatment.
G, base and the shell encapsulation for chip of making
The structure of h, encapsulating package is three independently chambers, difference corresponding sensing unit, compensating unit and responsive to temperature unit, and chamber top has the breeder tube of different size, and requires the hole on sensing unit to be greater than the hole on compensating unit.The diameter in hole is between 0.2-1mm
Claims (3)
1. three brachium pontis catalysis type micro-gas sensors manufacture methods with temperature modulation, its principal character is:
A. adopt planar I C technique after the monocrystalline silicon piece polished surface carries out dry method or wet oxidation, in a side or front deposited silicon nitride buffer layer, utilize sputtering sedimentation alundum (Al2O3) medium transition bed on silicon nitride layer;
B. adopt the flat film sputtering technology, the platinum film of deposition 0.3-2 micron on alundum (Al2O3) medium transition bed;
C. at another side or the back side copy pattern of monocrystalline silicon piece polished surface, wet etching and form silicon cup;
D. at the platinum film face of deposition, the mask lithography copy pattern, utilize ion beam or plasma etching platinum film, forms the heating resistor of sensitive element and compensating element,, resistance between 2～100 ohm, formation temperature sensitive resistance simultaneously, resistance is between 10-1000 ohm; Then, on the alundum (Al2O3) transition bed exposed, the mask lithography copy pattern, successively wet etching alundum (Al2O3) transition bed, silicon nitride medium separation layer, silica medium separation layer, monocrystalline silicon form the chip unit of a plurality of three brachium pontis on silicon chip;
E. at the platinum electrode exit, utilize coating process to carry out the electrode aurification, with gold ball bonding connection welding outer lead;
F. distinguish the alundum (Al2O3) catalytic carrier slurry of coating nanometer powder granularity in the 20-80 nanometer range on the brachium pontis of sensing unit and compensating unit, at 600-800 ℃ of lower sintering; Coating catalyst and go quick dose respectively on catalytic carrier after sintering, form catalytic gas transducer after high temperature 300-800 ℃ thermal treatment.
2. the three brachium pontis catalysis type micro-gas sensors manufacture methods with temperature modulation according to claim 1, is characterized in that temperature-sensitive resistor is placed on middle brachium pontis or is placed on a side brachium pontis.
3. three brachium pontis catalysis type micro-gas sensors manufacture methods with temperature modulation according to claim 1, the structure that it is characterized in that encapsulating package is three independently chambers, difference corresponding sensing unit, compensating unit and responsive to temperature unit, chamber top has the breeder tube of different size, and requires the hole on sensing unit to be greater than the hole on compensating unit.
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| CN102103106B true CN102103106B (en) | 2013-12-11 |
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| DE102015224533A1 (en) * | 2015-12-08 | 2017-06-08 | Robert Bosch Gmbh | Reactive sealing gas for the targeted adaptation of the cavity internal pressure |
| CN108169287A (en) * | 2017-12-18 | 2018-06-15 | 哈尔滨佳启科技开发有限公司 | A kind of hot-wire gas sensor and preparation method thereof |
| CN108732212B (en) * | 2018-05-23 | 2020-12-15 | 哈尔滨工程大学 | Manufacturing method of multi-effect detection integrated gas sensor, sensor and application of sensor |
| CN108955929B (en) * | 2018-05-23 | 2020-05-15 | 哈尔滨工程大学 | Manufacturing method of in-situ growth alumina oxide body temperature and humidity integrated sensor, sensor and working method |
| CN109489728A (en) * | 2018-12-14 | 2019-03-19 | 中国电子科技集团公司第四十八研究所 | A kind of sensor |
| CN112145864B (en) * | 2020-09-30 | 2022-04-26 | 新兴铸管股份有限公司 | Under-pressure ladle repairing technology for nodular cast iron pipe |
| CN113984847A (en) * | 2021-10-26 | 2022-01-28 | 贵州航天天马机电科技有限公司 | Catalytic gas sensor and manufacturing process thereof |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1067509A (en) * | 1991-06-05 | 1992-12-30 | 董连华 | Transducer for petroleum gas |
| CN1137119A (en) * | 1995-05-26 | 1996-12-04 | 中国矿业大学 | Double-bridge constant-temperature gas detection method and instrument |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1067509A (en) * | 1991-06-05 | 1992-12-30 | 董连华 | Transducer for petroleum gas |
| CN1137119A (en) * | 1995-05-26 | 1996-12-04 | 中国矿业大学 | Double-bridge constant-temperature gas detection method and instrument |
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