CN102096269B - Terahertz surface plasma wave optical modulator and modulation method thereof - Google Patents
Terahertz surface plasma wave optical modulator and modulation method thereof Download PDFInfo
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Abstract
The invention discloses a terahertz surface plasma wave optical modulator and a modulation method thereof, wherein the modulator comprises an intrinsic semiconductor chip, two blades or gratings which are arranged in parallel, a continuous wave laser, a modulation and alignment system and a temperature control device. The method comprises the steps of: irradiating the intrinsic semiconductor chip with the laser modulation signals which are emitted by the continuous wave laser and the modulation and alignment system to change the quantity of photo-generated carriers throughout the surface of the intrinsic semiconductor chip; modulating the plasma wave on the terahertz surface, which is transmitted by the surface of the intrinsic semiconductor chip, by changing the light intensity of the laser modulation signals; and coupling the terahertz wave to terahertz surface plasma wave and coupling the terahertz surface plasma wave modulated to the terahertz wave by using the two blades or the gratings which are arranged in parallel. The terahertz surface plasma wave optical modulator and the modulation method thereof provided by the invention have the advantages that the manufacturing cost is low, the energy consumption is low, the modulation frequency range is wide, the purpose of zero modulation can be realized, and the purpose of fast modulation can be realized.
Description
Technical field
The present invention relates to a kind of Terahertz surface plasma wave optical modulation device and utilize a kind of method of intrinsic semiconductor plasma frequency with the characteristic modulation Terahertz surface plasma wave of photo-generated carrier number change.
Background technology
Terahertz (Terahertz is called for short THz) ripple is meant that generally frequency is at 0.1-10THz (1THz=10
12Hz) electromagnetic wave in the scope.Its wave band belongs to far infrared and submillimeter wave category between microwave and near infrared ray.The electromagnetic wave that terahertz electromagnetic radiation is compared its all band has following exclusive characteristics: (1) THz wave is for a lot of non-polar molecule materials; Like wrappage such as pottery, plastics, paper, clothings very strong penetration power is arranged, can be used for carrying out non-destructive and untouchable detection and safety inspection.Most of polar molecules have intense absorption to THz wave, can be through analyzing their characteristic spectrum research material composition.Many organic molecules demonstrate intense absorption and dispersion characteristics at terahertz wave band, use the terahertz light spectral technology to study the structure of these molecules.(2) photon energy of THz wave is very low, and frequency is that the photon energy of the THz wave of 1THz is about 4meV, is approximately 10 of x-ray photon energy
-6Doubly, therefore can not produce harmful ionization, be suitable for biological tissue is carried out biopsy biological tissue.(3) the dipole vibration by relevant current drives produces, or passes through the THz wave that the nonlinear optics difference frequency produces by relevant laser pulse, has very high time and spatial coherence.Through the time domain waveform of coherent measurement terahertz wave signal, can obtain comprising the spectral information of amplitude and phase place.(4) the terahertz pulse signal only comprises the electromagnetic oscillation in several cycles seldom usually.The time domain waveform of terahertz pulse can be come out with very high precision measure on the femtosecond time scale.The typical pulse-widths of THz wave not only can be carried out the transient state spectral investigation of psec, femtosecond time resolution, and can prevent the background radiation noise effectively through the sampling and measuring technology in the subpicosecond magnitude.The measurement signal to noise ratio (S/N ratio) of THz wave can be greater than 10
10, far above the FFIR measuring technique.(5) with terahertz signal as the wide-band-message carrier, the channel ratio microwave that can carry much more.And other electromagnetic wave bands have been assigned to business such as broadcasting, mobile communication, and terahertz wave band is not assigned with use as yet.If can be used for communication, good economic benefit and vast market space will be arranged.
Though THz wave has application promise in clinical practice in industries such as communications, at present THz wave is lacked effective switch or modulation means.Existing switch or modulator still have a lot of weak points, such as: the Terahertz modulator of people such as R.Kersting design needs extremely low temperature to operate
[1]Though the Terahertz modulator of people such as T.Kleine-Ostmann design can be worked at normal temperatures, can only carry out the very little modulation of amplitude to terahertz signal
[2]The amplitude of the Terahertz modulators modulate of people such as J.Saxler design can reach 50%, but its modulating frequency is fast inadequately, can only reach several KHzs
[3], and the manufacture craft of this modulator is also complicated.
In order to produce better THz wave switch of performance or modulating device, people such as J.G ó mez Rivas convert THz wave into the Terahertz surface plasma wave
[4], through light intensity the influence of semiconductor photo-generated carrier quantity is realized the regulation and control to the Terahertz surface plasma wave, thereby realizes regulation and control THz wave
[5]Its regulation process is: convert THz wave to the Terahertz surface plasma wave; When the light-wave irradiation of enough light intensity during on semi-conductive surface; The Terahertz surface plasma wave of certain frequency can pass through this semi-conductive surface; And then be coupled as THz wave to the Terahertz surface plasma wave, thereby realize conducting to a certain CF THz wave; When the light wave that is radiated at semiconductor surface was blocked or weakened, grating made the Terahertz surface plasma wave of this frequency not weaken greatly through semiconductor surface or its intensity, thereby has realized blocking-up or the modulation to this frequency THz wave.Compare with other Terahertz modulators, the advantage of this modulator is to carry out fast modulation, and its modulating time is in the subpicosecond magnitude, and can work under near the environment of normal temperature.
But the Terahertz surface plasma wave optical modulator of people such as J.G ó mez Rivas design need use grating
[5], so performance is influenced by it.At first, and since the use of grating, the energy of grating meeting scattering Terahertz surface plasma wave itself, thus make the signal energy of passing through incur loss.Secondly, need produce the grating of transmissive CF Terahertz surface plasma wave, this has also increased difficulty and the cost made.The more important thing is that this Terahertz surface plasma wave optical modulator can only realize switch or modulation to the Terahertz surface plasma wave of very narrow wave band, and can not modulate the Terahertz surface plasma wave of wideband.This just can not give full play to THz wave and compare the wideer advantage of channel with microwave.In Terahertz communication, in the time need carrying out fast modulation, can't realize with conventional device to the THz wave of wideband.Therefore, we are necessary to design the Terahertz surface plasma wave optical modulator of a kind of low cost, low-loss, wide spectrum.
The background technology file:
1.R.Kersting，G.Strasser?and?K.Unterrainer，“Terahertz?phase?modulator”Electron.Lett.36，1156-1158(2000).
2.T.Kleine-Ostmann，P.Dawson，K.Pierz，G.Hein，and M.Koch，“Room-temperature?operation?of?an?electrically?driven?terahertz?modulator”App?l.Phys.Lett.84，3555-3557(2004).
3.H.T.Chen，W.J.Padilla，J.M.O.Zide，A.C.Gossard，A.J.Taylor?andR.D.Averitt，“Active?terahertz?metamaterial?devices”Nature?444，597-600(2006).
4.J.Saxler，J.Gómez?Rivas，C.Janke，H.P.M.Pel?lemans，P.Haring?Bolivar，and?H.Kurz，“Time-domain?measurements of surface plasmon polaritons?in?theterahertz?frequency?range”Phys.Rev.B?69，155427/1-4(2004).
5.J.Gómez Rivas，M.Kuttge，J.A.Sánchez-Gi?l，M.Kuttge，P.HaringBolivar，and H.Kurz，“Optically switchable mirrors for surface plasmonpolaritons?propagating?on?semiconductor?surfaces”Phys.Rev.B?74，245324/1-6(2006).
Summary of the invention
Technical matters: the object of the present invention is to provide a kind of Terahertz surface plasma wave optical modulator and modulator approach thereof, cost of manufacture is higher in the solution background technology, energy loss is big, technical matterss such as the modulation band width is narrower, modulating speed is not high, the modulation that can not realize making zero.
Technical scheme: Terahertz surface plasma wave optical modulator of the present invention comprises plasma frequency blade, continuous wave laser and modulation colimated light system and temperature control equipment in the intrinsic semiconductor wafer of terahertz wave band, two parallel placements near normal temperature the time; The blade of said two parallel placements is downward perpendicular to the intrinsic semiconductor wafer and the edge of a knife, and the edge of a knife leaves the Terahertz surface plasma wave aerial attenuation distance of the distance of intrinsic semiconductor upper wafer surface less than maximum frequency; Continuous wave laser and modulation colimated light system are arranged at two intrinsic semiconductor wafer tops between the blade; Temperature control equipment is affixed on the lower surface of intrinsic semiconductor wafer.
Distance between the blade of said two parallel placements is less than the propagation distance of the semiconductor surface of Terahertz surface plasma wave under laser radiation of maximum frequency.
The thickness of said intrinsic semiconductor wafer is greater than the attenuation distance of Terahertz surface plasma wave in semiconductor of minimum frequency.
Said temperature control equipment makes that whole intrinsic semiconductor surface temperature is even and constant; The temperature regulating range of temperature controller make laser intensity the weakest point on the intrinsic semiconductor surface between two blades plasma frequency greater than the maximum frequency of the Terahertz surface plasma wave that will transmit.
In order to improve the mutual transformation efficiency between THz wave and the Terahertz surface plasma wave; Proposition is suitable for regulating the Terahertz surface plasma wave optical modulator of single-frequency THz wave, comprise a plasma frequency near normal temperature the time at intrinsic semiconductor wafer, continuous wave laser and the modulation colimated light system of terahertz wave band, a temperature control equipment and two gratings; Grating can be by metal or semiconductor fabrication; The intrinsic semiconductor wafer is arranged between two gratings; Temperature control equipment is affixed on the lower surface of intrinsic semiconductor wafer; The surface of intrinsic semiconductor wafer is equal with the metal or the semiconductor surface at grating place, and continuous wave laser and modulation colimated light system are arranged at the top of intrinsic semiconductor wafer.
Said two grating lines the length of intrinsic semiconductor of process less than the propagation distance on the Terahertz surface plasma wave of the maximum frequency intrinsic semiconductor surface under laser radiation.
Said temperature control equipment makes that whole intrinsic semiconductor wafer surface temperature is even and constant; Temperature control equipment can make through the temperature of control intrinsic semiconductor laser intensity the weakest point on the intrinsic semiconductor surface between two gratings or blade plasma frequency greater than the maximum frequency of the Terahertz surface plasma wave that will transmit.
No matter be for single-frequency or for the terahertz signal of wideband, the modulator approach that makes zero of Terahertz surface plasma wave optical modulator is following: be radiated at the intrinsic semiconductor wafer and change this intrinsic semiconductor wafer surface photo-generated carrier quantity everywhere and change its plasma frequency thereby adopt continuous wave laser to send laser modulation signal through modulating system; According to the Drude model, when the frequency of Terahertz surface plasma wave during greater than the plasma frequency of intrinsic semiconductor wafer, intrinsic semiconductor wafer real part of permittivity just is generally, and the intrinsic semiconductor of this moment shows as dielectric property; When the frequency of Terahertz surface plasma wave during less than the plasma frequency of intrinsic semiconductor wafer, intrinsic semiconductor wafer real part of permittivity is generally negative, and the intrinsic semiconductor of this moment shows as metallic character; Because the Terahertz surface plasma wave can only be propagated at the opposite two media interphase of dielectric constant; So the Terahertz surface plasma wave is propagated at semiconductor surface when semiconductor shows as metallic character; And the Terahertz surface plasma wave can not be propagated at semiconductor surface when semiconductor shows as dielectric property; Can change the laser intensity be radiated at the intrinsic semiconductor wafer surface through electrical modulation signal thus, thereby to the Terahertz surface plasma wave that the intrinsic semiconductor wafer surface the is transmitted modulation of making zero; The blade of two gratings or parallel placement be used for THz wave be converted into the Terahertz surface plasma wave and will modulate after the Terahertz surface plasma wave be converted into THz wave.
Make zero the modulation another method following:
Thereby adopting continuous wave laser to send laser modulation signal through modulating system is radiated at the intrinsic semiconductor wafer and changes this intrinsic semiconductor wafer surface photo-generated carrier quantity everywhere and change its plasma frequency; According to the Drude model, when plasma frequency changed, specific inductive capacity also can change, so the attenuation coefficient that the Terahertz surface plasma wave is propagated at semiconductor surface also can change; When all frequency Terahertz surface plasma waves of needs modulation in the laser modulation signal intensity modulation when the most weak because bigger in the semiconductor surface decay, all frequency THz waves that are coupled out all can't be surveyed; And when the laser modulation signal intensity modulation arrives the most by force; Because it is less in the semiconductor surface decay; All frequency THz waves that are coupled out can both be surveyed; Can be radiated at the laser intensity of intrinsic semiconductor wafer surface thus through electrical modulation signal control, thereby to the Terahertz surface plasma wave that the intrinsic semiconductor wafer surface the is transmitted modulation of making zero.The blade of two gratings or parallel placement be used for THz wave be converted into the Terahertz surface plasma wave and will modulate after the Terahertz surface plasma wave be converted into THz wave.
The method of non-return-to-zero modulation is following:
Thereby adopting continuous wave laser to send laser modulation signal through modulating system is radiated at the intrinsic semiconductor wafer and changes this intrinsic semiconductor wafer surface photo-generated carrier quantity everywhere and change its plasma frequency; According to the Drude model, when plasma frequency changed, specific inductive capacity also can change, so the attenuation coefficient that the Terahertz surface plasma wave is propagated at semiconductor surface also can change; Because it is bigger in the semiconductor surface decay; All frequency THz wave intensity that are coupled out a little less than; And when the laser modulation signal intensity modulation arrived the most by force, because less in the semiconductor surface decay, all frequency THz wave intensity that are coupled out were stronger; Can change the laser intensity that is radiated at the intrinsic semiconductor wafer surface through electrical modulation signal thus, thereby the Terahertz surface plasma wave that the intrinsic semiconductor wafer surface is transmitted is carried out the non-return-to-zero modulation; The blade of two gratings or parallel placement be used for THz wave be converted into the Terahertz surface plasma wave and will modulate after the Terahertz surface plasma wave be converted into THz wave.
Said modulator approach can make zero according to the modulation amplitude scope of laser modulation signal or the realization that varies in size at a certain temperature for same modulator and modulate or the non-return-to-zero modulation.Make zero the required laser modulation signal of modulation or non-return-to-zero modulation by to judge: if after laser modulation signal is modulated; The THz wave of all frequencies is according to the modulating frequency break-make, and the modulation amplitude of so used laser modulation signal just can be realized the modulation of making zero; After if laser modulation signal is modulated; The THz wave of all frequencies can be detected in modulated process; And the amplitude of terahertz wave signal is along with modulating frequency changes, and the modulation amplitude of so used laser modulation signal just can be realized the non-return-to-zero modulation.
Said modulator approach is carried out in air, or is placed in the environment of vacuum or inflated with nitrogen and carries out.
Said method realizes the modulation to THz wave through the modulation to the Terahertz surface plasma wave.If signal or the signal after the modulation therefore before the modulation are to propagate rather than THz wave through the Terahertz surface plasma wave, only need to remove one of them blade or grating; If the signal after signal before the modulation and the modulation all is to propagate rather than propagate with THz wave through the Terahertz surface plasma wave, then remove two blades or grating, do not need the mutual conversion of Terahertz surface plasma wave and THz wave this moment.
Beneficial effect: the present invention has the following advantages:
1, cost of manufacture is low, energy loss is little.Can in the environment near normal temperature, work, not need extremely low temperature, condition of work satisfies easily.Grating only is used for coupling and does not participate in filtering, has therefore got rid of the possibility of grating scattering useful signal energy in filtering, thereby improves signal to noise ratio (S/N ratio).
2, modulation range is wide.Can modulate the terahertz wave band of broad, improve the performance and the range of application of device.
3, can realize as required making zero modulation and non-return-to-zero modulation.Modulation amplitude with laser modulation signal just can be regulated and control.
4, can realize fast modulation.Modulating time can reach the subpicosecond magnitude in theory.
Description of drawings
Fig. 1 is a structure principle chart of the present invention.
Fig. 2 is another structure principle chart of the present invention.This structural principle and Fig. 1 structural principle are similar, adopt grating to substitute blade and carry out coupling between THz wave and the Terahertz surface plasma wave with further raising coupling efficiency, but this structure can only be modulated the THz wave of single-frequency.
Fig. 3 is the electric field intensity of Terahertz surface plasma wave edge perpendicular to the intrinsic semiconductor surface direction | E
z| field strength distribution.
THz wave 1, blade 2, intrinsic semiconductor 3, Terahertz surface plasma wave 4, continuous wave laser and modulation colimated light system 5, laser modulation signal 6, temperature controller 7, metal 8, grating 9, extraneous gas or vacuum 10 are arranged among the figure.
Embodiment
The structure of Terahertz surface plasma wave optical modulator of the present invention comprises that a plasma frequency is in the blade of the intrinsic semiconductor wafer of terahertz wave band, two parallel placements, continuous wave laser, laser modulator and a temperature control equipment near normal temperature the time.Two blades are perpendicular to the intrinsic semiconductor wafer, and the edge of a knife keeps certain distance downwards and with semiconductor surface.Distance between two blades is less than the propagation distance of the semiconductor surface of Terahertz surface plasma wave under laser radiation of maximum frequency.The thickness of intrinsic semiconductor wafer is greater than the attenuation distance of Terahertz surface plasma wave in semiconductor of minimum frequency.Temperature controller is close to the lower surface of intrinsic semiconductor wafer, makes that whole intrinsic semiconductor surface temperature is even and constant.Regulate temperature controller, make laser intensity the weakest point on the intrinsic semiconductor surface between two blades plasma frequency just greater than the maximum frequency of the Terahertz surface plasma wave that will transmit.At this moment, the terahertz wave signal of all frequencies can be surperficial through intrinsic semiconductor with the form of surface plasma wave, realizes the conducting to all frequency terahertz wave signal.Regulate the light intensity of light that laser instrument sends then through laser modulator, the plasma frequency of semiconductor wafer surface will change thereupon, thereby is modulated at the Terahertz surface plasma wave of semiconductor surface transmission.When the light intensity power makes the plasma frequency at certain area place, intrinsic semiconductor surface constantly greater than with less than the frequency of the surface plasma wave of being propagated the time; These frequency signals will be by break-make repeatedly; Thereby realize that promptly amplitude is 100% modulation to the modulation of making zero of the Terahertz surface plasma wave of being propagated.Also have another kind of method, the power of Laser Modulation light intensity also can influence the propagation distance and the attenuation distance in semiconductor and space outerpace of Terahertz surface plasma wave, thus the power of the THz wave that influence is coupled out.When all frequency Terahertz surface plasma waves of needs modulation in the laser modulation signal intensity modulation when the most weak; Because bigger in the semiconductor surface decay, all frequency THz waves that are coupled out all can't be surveyed, and when the laser modulation signal intensity modulation arrives the most by force; Because it is less in the semiconductor surface decay; All frequency THz waves that are coupled out can both be surveyed, and have also just realized the modulation of making zero, and promptly amplitude is 100% modulation.Certainly; After if laser modulation signal is modulated; The THz wave of all frequencies can be detected in modulated process; Just the amplitude of terahertz wave signal is along with modulating frequency changes, and so used laser modulation signal has just been realized the non-return-to-zero modulation, and promptly amplitude is not 100% modulation.
Sometimes only need modulate, can adopt another kind of structure the THz wave of single-frequency.Adopt grating with further raising THz wave and Terahertz surface plasma wave coupling efficiency each other without blade in this structure.Grating can be formed by metal or semiconductor fabrication, be used for THz wave be converted into the Terahertz surface plasma wave and will modulate after the Terahertz surface plasma wave be converted into THz wave.Because grating constant is the value of fixing, so can not realize the THz wave of wideband is coupled.Dig a hole at two grating place metallic films or semi-conductive midway, fill up the intrinsic semiconductor wafer in the inside, hole again.The surface of intrinsic semiconductor wafer is equal with metal or semiconductive thin film surface.The intrinsic semiconductor wafer is used for surface plasma wave is modulated, two grating lines the length of intrinsic semiconductor of process less than the propagation distance on the intrinsic semiconductor surface of Terahertz surface plasma wave under laser radiation.Temperature controller is close to the whole lower surface of intrinsic semiconductor, makes that whole intrinsic semiconductor surface temperature is even and constant.Regulate temperature controller, make laser intensity the weakest point on the intrinsic semiconductor surface that the Terahertz surface plasma wave flowed through plasma frequency just greater than the maximum frequency of the Terahertz surface plasma wave that will transmit.At this moment, the terahertz wave signal of all frequencies can be surperficial through intrinsic semiconductor with the form of surface plasma wave, realizes the conducting to all frequency terahertz wave signal.Regulate the light intensity of light that laser instrument sends then through laser modulator, the plasma frequency of semiconductor wafer surface will change thereupon, thereby is modulated at the Terahertz surface plasma wave of semiconductor surface transmission.When the light intensity power makes the plasma frequency at certain area place, intrinsic semiconductor surface constantly greater than with less than the frequency of the surface plasma wave of being propagated the time; These frequency signals will be by break-make repeatedly; Thereby realize that promptly amplitude is 100% modulation to the modulation of making zero of the Terahertz surface plasma wave of being propagated.Also have another kind of method, the power of modulation light intensity also can influence the propagation distance and the attenuation distance in semiconductor and space outerpace of Terahertz surface plasma wave, thus the power of the THz wave that influence is coupled out.When all frequency Terahertz surface plasma waves of needs modulation in the laser modulation signal intensity modulation when the most weak; Because bigger in the semiconductor surface decay, all frequency THz waves that are coupled out all can't be surveyed, and when the laser modulation signal intensity modulation arrives the most by force; Because it is less in the semiconductor surface decay; All frequency THz waves that are coupled out can both be surveyed, and have also just realized the modulation of making zero, and promptly amplitude is 100% modulation.Certainly; After if laser modulation signal is modulated; The THz wave of all frequencies can be detected in modulated process; Just the amplitude of terahertz wave signal is along with modulating frequency changes, and so used laser modulation signal just can be realized the non-return-to-zero modulation, and promptly amplitude is not 100% modulation.
Same modulator both can have been realized at a certain temperature making zero modulating and also can realize the non-return-to-zero modulation; But the modulation amplitude scope of their required laser modulation signals or vary in size; The required laser modulation signal of said make zero modulation or non-return-to-zero modulation is by to judge: if after laser modulation signal is modulated; The THz wave of all frequencies is according to the modulating frequency break-make, and so used laser modulation signal just can be realized the modulation of making zero; After if laser modulation signal is modulated, the THz wave of all frequencies can be detected in modulated process, and the amplitude of terahertz wave signal is along with modulating frequency changes, and so used laser modulation signal just can be realized the non-return-to-zero modulation.Two blades or two gratings can be used for THz wave be converted into the Terahertz surface plasma wave and will modulate after the Terahertz surface plasma wave be converted into THz wave; So this method not only can be used to modulate the Terahertz surface plasma wave, also can be used to modulate THz wave.Signal after the signal of modulation or the modulation is to propagate rather than propagate with THz wave through the THz wave surface plasma wave if desired, only needs to remove one of them blade or grating; Signal after the signal of modulation and the modulation all is to propagate rather than THz wave through the THz wave surface plasma wave if desired, then removes two blades or grating, does not need the mutual conversion of THz wave surface plasma wave and THz wave this moment.Modulated process can carry out in air, if but device is placed in the environment of vacuum or inflated with nitrogen and can reaches better effect.
Terahertz surface plasma modulator with the blade coupling is an example below.At first to find suitable intrinsic semiconductor wafer, it be characterized as at normal temperatures or during near normal temperature its plasma frequency at terahertz wave band.When under certain temperature and certain illuminated; The THz wave that a part incides the blade knife-edge part is coupled as the Terahertz surface plasma wave earlier; The Terahertz surface plasma wave can be propagated along the surface of intrinsic semiconductor then; When the Terahertz surface plasma wave arrived the knife-edge part of second blade, some Terahertz surface plasma wave was coupled into THz wave at last.So just realize all conductings less than the THz wave of the Terahertz frequency range of intrinsic semiconductor plasma frequency under this temperature, as shown in Figure 1.Yet; When laser modulator reduces to be radiated at the light intensity on the semiconductor; Because the minimizing of photo-generated carrier quantity, the plasma frequency of intrinsic semiconductor will reduce, and at this moment the intrinsic semiconductor plasma frequency is less than the THz wave frequency of being transmitted; At this moment the Terahertz surface plasma wave can not be propagated on the intrinsic semiconductor surface, thereby has realized the blocking-up to THz wave.So when the light intensity power makes the plasma frequency at certain area place, intrinsic semiconductor surface constantly greater than with less than the frequency of the surface plasma wave of being propagated the time; These frequency signals will be by break-make repeatedly; Thereby realize that promptly amplitude is 100% modulation to the modulation of making zero of the Terahertz surface plasma wave of being propagated.Another kind method is that the power of modulation light intensity also can influence the propagation distance and the attenuation distance in semiconductor and space outerpace of Terahertz surface plasma wave, thereby influences the power of the THz wave that is coupled out.When all frequency Terahertz surface plasma waves of needs modulation in the laser modulation signal intensity modulation when the most weak; Because bigger in the semiconductor surface decay, all frequency THz waves that are coupled out all can't be surveyed, and when the laser modulation signal intensity modulation arrives the most by force; Because it is less in the semiconductor surface decay; All frequency THz waves that are coupled out can both be surveyed, the modulation that realized too making zero, and promptly amplitude is 100% modulation.Certainly; After if laser modulation signal is modulated, the THz wave of all frequencies can be detected in modulated process, and just the amplitude of terahertz wave signal is along with modulating frequency changes; So used laser modulation signal is just realized the non-return-to-zero modulation, and promptly amplitude is not 100% modulation.The propagation distance of Terahertz surface plasma wave, externally the attenuation distance in gas (or vacuum) and the intrinsic semiconductor can be tried to achieve according to the dispersion equation of surface plasma, and the dispersion equation of Terahertz surface plasma is:
K in the above formula
xIt is propagation constant along the Terahertz surface plasma wave of the surperficial THz wave surface plasma wave direction of propagation (+x direction) of intrinsic semiconductor.k
Z1And k
Z2Be perpendicular to the space outerpace direction (+z direction) on intrinsic semiconductor surface and the propagation constant of intrinsic semiconductor direction (z direction) respectively.C is the light velocity in the vacuum.ω is the pairing angular frequency of maximum frequency in the THz wave.
Be the complex permittivity (ε of extraneous gas (or vacuum)
1Be the real part of extraneous gas complex permittivity, ε
1' be the imaginary part of extraneous gas complex permittivity).
Be the complex permittivity (ε of intrinsic semiconductor wafer
2Be the real part of intrinsic semiconductor complex permittivity, ε
2' be the imaginary part of intrinsic semiconductor complex permittivity).A, C and E be respectively this frequency Terahertz surface plasma wave edge+x direction ,+the z direction ,-phase constant of z direction, B, D and F be respectively this frequency Terahertz surface plasma wave edge+x direction ,+the z direction ,-attenuation constant of z direction.
The Terahertz surface plasma wave of this frequency is propagated on the interface of extraneous gas and intrinsic semiconductor, when its intensity is reduced to original 1/e the Terahertz surface plasma wave the distance of process be propagation distance.Propagation distance is used δ
SpThe attenuation constant B of (+x direction) calculates and to try to achieve along the direction of propagation for expression, available Terahertz surface plasma wave:
Referring to Fig. 3, the Terahertz surface plasma wave is along the electric field intensity perpendicular to the intrinsic semiconductor surface direction | E
z| be exponential damping in this direction (± z direction).When electric field intensity is reduced to the 1/e of intrinsic semiconductor surface field intensity, be respectively the externally attenuation distance in gas and the intrinsic semiconductor medium of this frequency Terahertz surface plasma wave, use δ respectively to the vertical range on intrinsic semiconductor surface
dAnd δ
mExpression.Available Terahertz surface plasma wave along perpendicular to the intrinsic semiconductor surface direction externally gas try to achieve with attenuation constant D and F calculating in the intrinsic semiconductor:
In practical devices, because laser illumination is inhomogeneous in the light intensity of semiconductor surface, so semiconductor surface plasma frequency everywhere has nothing in common with each other when modulator is made as conducting.Therefore, when calculating Terahertz surface plasma propagation distance, can calculate through the method for infinitesimal analysis.And therefore the method for the infinitesimal analysis hell to pay that in practical application, seems also can adopt following method: earlier modulator is made as conducting, near the light intensity center of semiconductor surface, sets the position of two parallel blades arbitrarily.Regulate the distance of two blades then, make to be received by the terahertz time-domain spectroscopy appearance in the exit of another blade from all frequency THz waves of a blade incident.Then modulator is made as blocking-up, makes all can not to be received (modulation of making zero) in the exit of another blade from all frequency THz waves of a blade incident, or the size of all frequency THz waves all change (non-return-to-zero modulation).If the amplitude of variation of THz wave after ovennodulation is obvious inadequately, the distance between appropriate change two blades, but to guarantee that all the frequency THz waves from a blade incident still can be received in the exit of another blade when modulator is made as conducting.If the THz wave energy of outgoing is compared very little with the THz wave energy of incident; Can suitably regulate the incident and the shooting angle of the edge of a knife and semi-conductive distance and THz wave, to improve the coupling efficiency between THz wave and the Terahertz surface plasma wave.
Can this Terahertz surface plasma wave optical modulator use, and selects for use suitable intrinsic semiconductor most important.In order to make this Terahertz surface plasma wave optical modulator to work at normal temperatures, the plasma frequency of this intrinsic semiconductor must be near terahertz wave band.This conclusion can be derived by the Drude model, according to the Drude model
In the above-mentioned formula,
Be the complex permittivity of intrinsic semiconductor, ε
2Be the real part of intrinsic semiconductor complex permittivity, ε
2' be the imaginary part of intrinsic semiconductor complex permittivity, ε
StaticBe the static dielectric of intrinsic semiconductor, ω
pBe the plasma angular frequency of intrinsic semiconductor, ω is the THz wave angular frequency that is transmitted, and τ is the momentum relaxation time, and it can be calculated by the carrier mobility of intrinsic semiconductor
In the above-mentioned formula, m
*Be the effective mass of charge carrier, μ is a carrier mobility, and e is a charge carrier institute carried charge.
According to the Drude model, through changing the plasma angular frequency of intrinsic semiconductor
pCan change intrinsic semiconductor complex permittivity real part ε
2Sign.If the plasma angular frequency of intrinsic semiconductor at normal temperatures
pMore approaching with the THz wave angular frequency of being transmitted, ω so
pLess change amount just can realize complex permittivity real part ε
2Sign change.The plasma angular frequency of intrinsic semiconductor
pPlasma frequency f with intrinsic semiconductor
pRelation be:
The plasma angular frequency of intrinsic semiconductor
pCan draw by computes
In the above-mentioned formula, n is the free carrier concentration of intrinsic semiconductor, ε
0Be absolute dielectric constant, ε
StaticBe the static dielectric of intrinsic semiconductor, m
*It is the effective mass of charge carrier.Because the free carrier concentration of intrinsic semiconductor can change along with the photo-generated carrier number change, so change the plasma angular frequency that light intensity magnitude just can change this intrinsic semiconductor top layer
pThereby, the sign of change intrinsic semiconductor real part of permittivity.At normal temperatures, the plasma frequency f of intrinsic semiconductor
pNear (ω 1THz
pBe about 2 π * 10
12Rad/s) pairing carrier concentration can be by computes
Because different semiconductors has different static dielectric and charge carrier effective mass, so as long as the free carrier concentration of this intrinsic semiconductor is near 10 at normal temperatures
15Cm
-3Or 10
16Cm
-3, its plasma frequency is all near 1THz.And the intrinsic semiconductor that meets such condition has indium arsenide and indium antimonide.Indium arsenide intrinsic carrier concentration under 27 ℃ temperature is about 7 * 10
14Cm
-3, indium antimonide intrinsic carrier concentration under 27 ℃ temperature is about 1 * 10
16Cm
-3Can also according to the frequency of the Terahertz surface plasma wave that will modulate different; Temperature through temperature controller appropriate change intrinsic semiconductor; Make plasma frequency more near the frequency of the Terahertz surface plasma wave of transmission, so just can use less intensity modulation amplitude to realize modulation THz wave on the surface.Such as changing to 30 ℃ when temperature from-30 ℃, the plasma frequency of indium antimonide changes to 2.0THz from 0.8THz; Change to 127 ℃ from 30 ℃ when temperature, the plasma frequency of indium arsenide changes to 1.4THz from 0.4THz.
Claims (8)
1. a Terahertz surface plasma wave optical modulator is characterized in that comprising plasma frequency blade (2), continuous wave laser and modulation colimated light system (5) and temperature control equipment (7) in the intrinsic semiconductor wafer (3) of terahertz wave band, two parallel placements near normal temperature the time; The blade of said two parallel placements is downward perpendicular to the intrinsic semiconductor wafer and the edge of a knife, and the edge of a knife leaves the Terahertz surface plasma wave aerial attenuation distance of the distance of intrinsic semiconductor upper wafer surface less than maximum frequency; Continuous wave laser and modulation colimated light system are arranged at two intrinsic semiconductor wafer tops between the blade; Temperature control equipment is affixed on the lower surface of intrinsic semiconductor wafer.
2. Terahertz surface plasma wave optical modulator according to claim 1 is characterized in that distance between the blade (2) of said two parallel placements is less than the propagation distance of the semiconductor surface of Terahertz surface plasma wave under laser radiation of maximum frequency.
3. Terahertz surface plasma wave optical modulator according to claim 1 is characterized in that Terahertz surface plasma wave the attenuation distance in semiconductor of the thickness of said intrinsic semiconductor wafer (3) greater than minimum frequency.
4. Terahertz surface plasma wave optical modulator according to claim 1 is characterized in that said temperature control equipment (7) makes that whole intrinsic semiconductor wafer (3) surface temperature is even and constant; The plasma frequency that temperature control equipment (7) can be realized laser intensity the weakest point on intrinsic semiconductor (3) surface between two blades (2) through the temperature of control intrinsic semiconductor greater than the maximum frequency of the Terahertz surface plasma wave that will transmit.
5. modulator approach based on the said Terahertz surface plasma wave of claim 1 optical modulator is characterized in that said method comprises make zero modulator approach and non-return-to-zero modulator approach:
The modulator approach that makes zero one is following: be radiated at the intrinsic semiconductor wafer and change this intrinsic semiconductor wafer surface photo-generated carrier quantity everywhere and change its plasma frequency thereby adopt continuous wave laser to send laser modulation signal through modulating system; According to the Drude model, when the frequency of Terahertz surface plasma wave during greater than the plasma frequency of intrinsic semiconductor wafer, intrinsic semiconductor wafer real part of permittivity just is generally, and the intrinsic semiconductor of this moment shows as dielectric property; When the frequency of Terahertz surface plasma wave during less than the plasma frequency of intrinsic semiconductor wafer, intrinsic semiconductor wafer real part of permittivity is generally negative, and the intrinsic semiconductor of this moment shows as metallic character; Because the Terahertz surface plasma wave can only be propagated at the opposite two media interphase of dielectric constant; So the Terahertz surface plasma wave is propagated at semiconductor surface when semiconductor shows as metallic character; And the Terahertz surface plasma wave can not be propagated at semiconductor surface when semiconductor shows as dielectric property; Can be radiated at the laser intensity of intrinsic semiconductor wafer surface thus through electrical modulation signal control, thereby to the Terahertz surface plasma wave that the intrinsic semiconductor wafer surface the is transmitted modulation of making zero;
The modulator approach that makes zero two is following: be radiated at the intrinsic semiconductor wafer and change this intrinsic semiconductor wafer surface photo-generated carrier quantity everywhere and change its plasma frequency thereby adopt continuous wave laser to send laser modulation signal through modulating system; According to the Drude model, when plasma frequency changed, specific inductive capacity also can change, so the attenuation coefficient that the Terahertz surface plasma wave is propagated at semiconductor surface also can change; When all frequency Terahertz surface plasma waves of needs modulation in the laser modulation signal intensity modulation when the most weak; Because it is bigger in the semiconductor surface decay; All frequency THz waves that are coupled out all can't be surveyed; And when the laser modulation signal intensity modulation arrived the most by force, because less in the semiconductor surface decay, all frequency THz waves that are coupled out can both be surveyed; Can be radiated at the laser intensity of intrinsic semiconductor wafer surface thus through electrical modulation signal control, thereby to the Terahertz surface plasma wave that the intrinsic semiconductor wafer surface the is transmitted modulation of making zero;
The non-return-to-zero modulator approach is following: be radiated at the intrinsic semiconductor wafer and change this intrinsic semiconductor wafer surface photo-generated carrier quantity everywhere and change its plasma frequency thereby adopt continuous wave laser to send laser modulation signal through modulating system; According to the Drude model, when plasma frequency changed, specific inductive capacity also can change, so the attenuation coefficient that the Terahertz surface plasma wave is propagated at semiconductor surface also can change; When all frequency Terahertz surface plasma waves of needs modulation when the laser modulation signal light intensity is the most weak; Because it is bigger in the semiconductor surface decay; All frequency THz wave intensity that are coupled out a little less than; And when the laser modulation signal intensity modulation arrived the most by force, because less in the semiconductor surface decay, all frequency THz wave intensity that are coupled out were stronger; Can change the laser intensity that is radiated at the intrinsic semiconductor wafer surface through electrical modulation signal thus, thereby the Terahertz surface plasma wave that the intrinsic semiconductor wafer surface is transmitted is carried out the non-return-to-zero modulation.
6. modulator approach according to claim 5; It is characterized in that the modulation that both can realize at a certain temperature making zero of same modulator also can realize non-return-to-zero modulation; But the modulation amplitude scope of their required laser modulation signals or vary in size; The required laser modulation signal of said make zero modulation or non-return-to-zero modulation is by to judge: if after laser modulation signal is modulated; The THz wave of all frequencies is according to the modulating frequency break-make, and so used laser modulation signal just can be realized the modulation of making zero; After if laser modulation signal is modulated, the THz wave of all frequencies can be detected in modulated process, and the amplitude of terahertz wave signal changes along with modulating frequency, and so used laser modulation signal just can be realized the non-return-to-zero modulation.
7. modulator approach according to claim 5 is characterized in that said modulator approach carries out in air, or is placed in the environment of vacuum or inflated with nitrogen and carries out.
8. modulator approach according to claim 5, the blade that it is characterized in that two parallel placements be used for THz wave be converted into the Terahertz surface plasma wave and will modulate after the Terahertz surface plasma wave be converted into THz wave; Signal after the signal of modulation or the modulation is to propagate rather than propagate with THz wave through the Terahertz surface plasma wave if desired, only needs to remove one of them blade; Signal after the signal of modulation and the modulation all is to propagate rather than THz wave through the Terahertz surface plasma wave if desired, then removes two blades, does not need the mutual conversion of THz wave surface plasma wave and THz wave this moment.
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| CN102736273A (en) * | 2012-06-28 | 2012-10-17 | 南京邮电大学 | Method for modulating temperatures of electromagnetic waves based on surface plasma wave transmission distance |
| CN102739165B (en) * | 2012-06-28 | 2015-04-01 | 南京邮电大学 | Electromagnetic wave modulation method based on surface plasma wave transmission distance |
| CN102902130A (en) * | 2012-09-27 | 2013-01-30 | 中国计量学院 | High-speed terahertz wave modulating device and method |
| CN104950545B (en) * | 2014-03-26 | 2018-10-12 | 南京理工大学 | In the method for nonmetallic materials and medium interface excitating surface plasma wave and excimer |
| CN104090449B (en) * | 2014-07-08 | 2017-01-25 | 中国科学院合肥物质科学研究院 | Method for achieving surface plasmon polariton band gap broadband tuning by means of double-pump light interference |
| CN104166249B (en) * | 2014-07-22 | 2017-03-22 | 南京邮电大学 | Terahertz wave optical modulation device, method and equipment |
| CN105044930A (en) * | 2015-08-14 | 2015-11-11 | 电子科技大学 | Semiconductor terahertz wave optical modulator |
| CN105572797B (en) * | 2016-02-15 | 2021-02-26 | 欧阳征标 | Terahertz wave pulse amplitude modulation signal and optical pulse amplitude modulation signal conversion amplifier |
| CN106546555B (en) * | 2016-10-08 | 2019-05-21 | 首都师范大学 | The spectrum modulation method and light path system of air plasma generation THz wave |
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