CN102736273A - Method for modulating temperatures of electromagnetic waves based on surface plasma wave transmission distance - Google Patents
Method for modulating temperatures of electromagnetic waves based on surface plasma wave transmission distance Download PDFInfo
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- CN102736273A CN102736273A CN2012102162162A CN201210216216A CN102736273A CN 102736273 A CN102736273 A CN 102736273A CN 2012102162162 A CN2012102162162 A CN 2012102162162A CN 201210216216 A CN201210216216 A CN 201210216216A CN 102736273 A CN102736273 A CN 102736273A
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Abstract
The invention discloses a method for modulating temperatures of electromagnetic waves based on a surface plasma wave transmission distance. The method comprises the following steps of: arranging two parallel metal blades, namely a first blade and a second blade above the surface of an intrinsic semiconductor panel; transmitting the electromagnetic waves of which the frequency is lower than the plasma frequency of the intrinsic semiconductor panel from the outer side of the first blade to a clearance between the cutting edge of the first blade and the intrinsic semiconductor panel, and exciting surface plasma waves which are transmitted along the surface of the intrinsic semiconductor panel on the surface of the intrinsic semiconductor panel; and keeping the distance between the first blade and the second blade constant, and adjusting the temperature of the intrinsic semiconductor panel to ensure that the transmission distance of the surface plasma waves on the surface of the intrinsic semiconductor panel is changed and the intensity of the electromagnetic waves coupled at the cutting edge of the second blade is changed along with the variation of the transmission distance so as to modulate the electromagnetic waves. The method has the advantages that the method is small in temperature range, high in modulation speed, simple in hardware structure, easy to realize, and the like; and wideband electromagnetic waves can be modulated in a return-to-zero mode and a non-return-to-zero mode.
Description
Technical field
The present invention relates to a kind of electromagnetic wave modulator approach, relate in particular to a kind of electromagnetic wave temperature modulation method, belong to electromagnetism modulation technique field based on the surface plasma wave transmission range.
Background technology
Current, the research of surface plasma wave mainly concentrates on optics and near infrared frequency range, and the conductor material of selecting for use is metal, however surface plasma wave can not only on the metal surface, transmit, equally also can on semiconductor surface, transmit.Compare metal, semiconductor energy is confined near surface with the low frequency surface plasma wave better.And the big outstanding advantage that semiconductor is compared metal is that semi-conductive carrier concentration can be easy to through changing the temperature change; So just can change the transport property of surface plasma wave, and then can make modulator based on surface plasma wave through the semi-conductive carrier concentration of ACTIVE CONTROL at semiconductor surface.Many in the world seminars have carried out correlative study, and J. G ó mez Rivas seminar has proposed the temp control switch based on grating, and the primary structure of this temperature switch is a semiconductor grating; Through the temperature of change semiconductor grating, thereby regulate the free carrier concentration in the semiconductor, and then change semi-conductive specific inductive capacity; Influence the grating reflection wavelength; Transmission amount (J. G ó mez Rivas et al, Low-frequency active surface plasmon optics on semiconductors, the APPLIED PHYSICS LETTERS 88 of the surface plasma wave of grating flow through in final control; 082106,2006).
Yet the temp control switch based on surface plasma wave of J. G ó mez Rivas seminar exploitation need use grating, so this temp control switch is still imperfect on performance.At first, the energy of grating meeting scattering surface plasma wave itself, thus make signal energy incur loss.Secondly, because grating reflection is to specific frequency,, can not regulate and control the surface plasma wave of wideband section so this surface plasma wave temp control switch can only be realized switch control to the CF of narrower wave band.In other words, if there are the many wavelength signals far away of being separated by in surface plasma wave the inside, conventional device just can't be simultaneously carried out switch modulation to the signal of several wavelength.
In addition, Tao Yang seminar proposes the method that the based semiconductor plasma frequency is modulated surface plasma wave recently.When electromagnetic frequency during less than the semiconductor plasma frequency, surface plasma wave can transmit on semiconductor; When electromagnetic frequency during greater than the semiconductor plasma frequency, surface plasma wave then can not transmit on intrinsic semiconductor.This method utilizes temperature to control the free carrier concentration of intrinsic semiconductor, thereby changes the intrinsic semiconductor plasma frequency.Though with the relative broad of compared with techniques modulation band of J. G ó mez Rivas, this method needs bigger range of temperature to realize the relative variation of intrinsic semiconductor plasma frequency and wave frequency size.Because range of temperature is limited, the amplitude of variation of intrinsic semiconductor plasma frequency is also limited, so the modulation band of surface plasma wave is limited in scope, influences this technological widespread usage.
Summary of the invention
Technical matters to be solved by this invention is to overcome the deficiency of prior art, and a kind of electromagnetic wave temperature modulation method based on the surface plasma wave transmission range is provided, can be through much little that adjustment amplitude realizes the more electromagnetic wave modulation of wide frequency ranges.
The following technical scheme of the concrete employing of the present invention:
Electromagnetic wave temperature modulation method based on the surface plasma wave transmission range; Two metal blades that are parallel to each other are set: first blade and second blade above the intrinsic semiconductor planar surface; The cutting edge of two metal blades all vertically points to intrinsic semiconductor plate surface, and two metal blade cutting edges equate with the distance on intrinsic semiconductor plate surface; From the electromagnetic wave of the dull and stereotyped gap location transmission frequency of the cutting edge of this blade of lateral of first blade and intrinsic semiconductor less than the intrinsic semiconductor plasma frequency; At intrinsic semiconductor planar surface excitating surface plasma ripple, this surface plasma wave is transmitted to the cutting edge below of second blade along the intrinsic semiconductor planar surface by the cutting edge below of first blade; Keep the distance between first blade and second blade constant; Through the dull and stereotyped temperature of adjustment intrinsic semiconductor; Make said surface plasma wave change in the transmission range of intrinsic semiconductor planar surface; The electromagnetic intensity that the second blade cutting edge place is coupled out changes thereupon, thereby realizes electromagnetic modulation.
Adopt technique scheme can realize the modulation (switch modulation) of making zero of wide band electromagnetic wave, also can realize the non-return-to-zero modulation of wide band electromagnetic wave; The technical scheme of modulation and non-return-to-zero modulation of making zero is distinguished as follows:
The modulation of making zero: said electromagnetic wave is a wide band electromagnetic wave; The temperature that said adjustment intrinsic semiconductor is dull and stereotyped; Refer to the dull and stereotyped temperature of intrinsic semiconductor is changed between first temperature and second temperature; Under first temperature, the surface plasma wave of the low-limit frequency that wide band electromagnetic wave excited in the transmission range of intrinsic semiconductor planar surface less than the distance between first blade and second blade; Under second temperature, the surface plasma wave of the highest frequency that wide band electromagnetic wave excited in the transmission range of intrinsic semiconductor planar surface greater than the distance between first blade and second blade.
The non-return-to-zero modulation: said electromagnetic wave is a wide band electromagnetic wave; During the temperature of adjustment intrinsic semiconductor plate, temperature satisfy all the time the surface plasma wave that makes the highest frequency that wide band electromagnetic wave excites in the transmission range of intrinsic semiconductor planar surface greater than the distance between two metal blades.
Preferably; The distance on said two metal blade cutting edges and intrinsic semiconductor plate surface is less than the aerial attenuation distance of the surface plasma wave of low-limit frequency, and the thickness of said intrinsic semiconductor plate is greater than the attenuation distance of surface plasma wave in this intrinsic semiconductor plate of highest frequency; The frequency of said intrinsic semiconductor flat board plasma frequency and incident electromagnetic wave at normal temperatures is approaching.
Compare prior art, the inventive method has the following advantages:
One, the inventive method need not make the intrinsic semiconductor plasma frequency significantly change, but realizes modulation through the transmission range of surface plasma wave, and therefore temperature required setting range is little, and it is fast to regulate the speed;
Two, because temperature required setting range is little, lower to the hardware requirement of temperature control equipment, be easy to realize that cost significantly reduces;
Three, the inventive method can be modulated the electromagnetic wave bands of broad, has improved the performance and the range of application of device;
Four, proposed temp control switch with respect to J. G ó mez Rivas seminar, the inventive method need not made grating in the intrinsic semiconductor wafer surface, and the cost in the whole modulated process is lower, and energy loss is little, and modulation range is wide.
Description of drawings
Fig. 1 is the structural representation of electromagnetic wave modulating device of the present invention, and the label implication is following among the figure:
1 is electromagnetic wave, and 2 is that intrinsic semiconductor is dull and stereotyped, and 31,32 is two parallel metal blades, and 4 is surface plasma wave, and 5 is temperature control equipment.
Embodiment
Below in conjunction with accompanying drawing technical scheme of the present invention is elaborated:
Modulating device used in the present invention is as shown in Figure 1, comprises intrinsic semiconductor flat board 2, is set in parallel in two blades 31,32 of dull and stereotyped 2 tops of intrinsic semiconductor, and the temperature control equipment 5 that is used to adjust the intrinsic semiconductor plate temperature.To the gap location transmission frequency of the cutting edge of one of them blade 31 and intrinsic semiconductor dull and stereotyped 2 electromagnetic wave 1 less than this intrinsic semiconductor plasma frequency; Go out the surface plasma wave of below blade 32 cutting edges, propagating 4 at dull and stereotyped 2 surface excitations of the intrinsic semiconductor between the cutting edge of two blades; And be coupled as electromagnetic wave 1 at blade 32 cutting edge places, can detect through the detector that is arranged on the blade 32 cutting edges outside.Make the distance on dull and stereotyped 2 surfaces of cutting edge and intrinsic semiconductor of two blades 31,32 less than the aerial attenuation distance of the surface plasma wave of highest frequency through the position of adjusting two blades.The thickness of simultaneously selected intrinsic semiconductor dull and stereotyped 2 is greater than the attenuation distance of surface plasma wave in this intrinsic semiconductor dull and stereotyped 2 of low-limit frequency.
Change the temperature of intrinsic semiconductor dull and stereotyped 2 through temperature control equipment 5; The specific inductive capacity of intrinsic semiconductor also can change; Therefore surface plasma wave 4 also can change at the attenuation coefficient on dull and stereotyped 2 surfaces of intrinsic semiconductor: when temperature was higher, because surface plasma wave 4 is less in the dull and stereotyped 2 surface decay of intrinsic semiconductor, the transmission range of surface plasma wave 4 was bigger; Surface plasma wave 4 signals at blade 32 places are stronger, and electromagnetic wave 1 intensity that is coupled out is also stronger; When temperature is low because surface plasma wave 4 is bigger in the dull and stereotyped 2 surface decay of intrinsic semiconductor, the surface plasma wave signal weaker at blade 32 places, the electromagnetic intensity that is coupled out a little less than; Reduction along with temperature; Surface plasma wave 4 increases in the decay on dull and stereotyped 2 surfaces of intrinsic semiconductor gradually; Distance between the blade 31 and 32 surpasses the transmission range of surface plasma wave 4 on dull and stereotyped 2 surfaces of intrinsic semiconductor; The signal intensity of surface plasma wave 4 exhausts before it is transferred to below the cutting edge of blade 32, the cutting edge place of final blade 32 electromagnetic wave signal that can't be coupled out.Therefore, can realize modulation through changing the temperature of intrinsic semiconductor dull and stereotyped 2 to electromagnetic wave 1.
For the ease of public understanding, be that example explains that respectively the present invention is make zero modulation and the non-return-to-zero modulation that how to realize wide band electromagnetic wave with the indium antimonide intrinsic semiconductor below.
The modulation of making zero
As shown in Figure 1; Indium antimonide intrinsic semiconductor (its plasma frequency at normal temperatures is in the 1.9-2.0THz scope) wafer 2 is placed horizontally on the temperature control equipment 5; 31,32, two blades of two metal blades of parallel placement are downward perpendicular to the upper surface and the cutting edge of indium antimonide intrinsic semiconductor wafer 2 above indium antimonide intrinsic semiconductor wafer 2.Temperature intrinsic semiconductor is dull and stereotyped through temperature control equipment 5 remains on 30 ℃; Cutting edge with wide band electromagnetic wave 1 (like frequency range at 0.2-0.4THz) directive blade 31; Make that at indium antimonide intrinsic semiconductor wafer 2 surface excitation surface plasma waves 4 this surface plasma wave 4 is propagated along the 2 surface transmission of indium antimonide intrinsic semiconductor wafer and to the cutting edge place of blade 32.Regulate the position of two blades, make: the distance between the cutting edge of two blades and indium antimonide intrinsic semiconductor wafer 2 upper surfaces is less than the surface plasma wave 4 aerial attenuation distances of 0.4THz; Simultaneously, the thickness of selected indium antimonide intrinsic semiconductor wafer 2 is greater than the attenuation distance of surface plasma wave 4 in indium antimonide intrinsic semiconductor wafer 2 of 0.2THz.
The transmission range of the surface plasma wave of a certain frequency and externally the attenuation distance in gas and the indium antimonide intrinsic semiconductor wafer can try to achieve according to the dispersion equation of surface plasma, the dispersion equation of surface plasma is:
In the above formula
k x It is wave vector size along this frequency surface plasma wave of the indium antimonide intrinsic semiconductor wafer surface direction of propagation (+x direction).
k Z1 With
k z2
Respectively perpendicular to the upwards direction (+z direction) of indium antimonide intrinsic semiconductor wafer surface and the wave vector size of this frequency surface plasma wave of downward direction (z direction).
cIt is the light velocity in the vacuum.
ωIt is the pairing angular frequency of this frequency electromagnetic wave.
Be the complex permittivity (ε of extraneous gas or vacuum
1Be the real part of extraneous gas complex permittivity, ε
1' be the imaginary part of extraneous gas complex permittivity).
Be indium antimonide intrinsic semiconductor wafer complex permittivity (
ε 2Be the real part of indium antimonide intrinsic semiconductor wafer complex permittivity,
ε 2' be the imaginary part of indium antimonide intrinsic semiconductor wafer complex permittivity).
A,
CWith
EBe respectively this frequency surface plasma wave edge+x direction ,+the z direction ,-phase coefficient of z direction,
B,
DWith
FBe respectively this frequency surface plasma wave edge+x direction ,+the z direction ,-attenuation coefficient of z direction.
This frequency surface plasma wave is used in the propagation distance of indium antimonide intrinsic semiconductor wafer surface
δ Spp Expression, usable surface plasma wave be the attenuation coefficient of (+x direction) along the direction of propagation
BCalculating is tried to achieve:
The attenuation distance of this frequency surface plasma wave in air and indium antimonide intrinsic semiconductor wafer used respectively
δ d With
δ m Expression.Usable surface plasma wave edge is perpendicular to the attenuation coefficient of indium antimonide intrinsic semiconductor wafer surface direction in air and indium antimonide intrinsic semiconductor wafer
DWith
FCalculating is tried to achieve:
If the distance between two blades is set to 30mm, and the minimum value of the transmission range of surface plasma wave 4 this moment on indium antimonide intrinsic semiconductor wafer surface is the transmission range of 0.4THz surface plasma wave
δ Spp =31.1mm.So surface plasma wave 4 can arrive the blade 32 of another side, and the detector that is fixedly installed on blade 32 outsides receives.
Can find out that through above-mentioned formula characteristic length and the specific inductive capacity of intrinsic semiconductor of surface plasma wave on indium antimonide intrinsic semiconductor wafer has important getting in touch.The complex permittivity of intrinsic semiconductor can be by following Drude model tormulation:
In the above-mentioned formula,
Be the complex permittivity of intrinsic semiconductor,
ε 2Be the real part of intrinsic semiconductor complex permittivity,
ε 2' be the imaginary part of intrinsic semiconductor complex permittivity,
Be the static dielectric of intrinsic semiconductor,
ωIt is the electromagnetic wave angular frequency that is transmitted.
In the above-mentioned formula,
ω p =[
Ne 2/ (
ε 0 ε Static m)]
1/2Be the plasma angular frequency of intrinsic semiconductor, wherein
nBe the carrier concentration of intrinsic semiconductor, e is an electron charge,
ε 0Be permittivity of vacuum,
mIt is the charge carrier effective mass.
In the above-mentioned formula,
Be the momentum relaxation time, wherein
μBe carrier mobility, the momentum relaxation time can be calculated by the carrier mobility of intrinsic semiconductor.
According to the dispersion equation of Drude model and surface plasma wave and surface plasma wave transmission range in indium antimonide intrinsic semiconductor wafer surface
δ Spp Expression formula, when temperature reduces, the carrier concentration of intrinsic semiconductor
nDiminish the plasma angular frequency of intrinsic semiconductor
ω p Diminish, the imaginary part of specific inductive capacity and the absolute value of real part reduce, and meanwhile, surface plasma wave becomes big along the attenuation coefficient of intrinsic semiconductor planar surface transmission, and surface plasma wave is in the transmission range of intrinsic semiconductor surface plasma wave
δ Spp And then reduce, therefore can realize the control of surface plasma wave, thereby the electromagnetic wave that is coupled out is regulated and control through the temperature of control intrinsic semiconductor along the attenuation coefficient of semiconductor surface transmission.Concrete regulation and control step is:
Regulate the distance between two blades, make between two blades distance just less than the transmission range of the surface plasma wave of maximum frequency (for example 30
℃Down, two blade distance are set to 30mm, and this is worth just less than 0.4THz surface plasma wave transmission range 31.1mm in indium antimonide intrinsic semiconductor wafer surface under this temperature), at this moment.0.2-0.4THz the surface plasma wave 4 in the scope can be transferred to the cutting edge below of blade 32, the electromagnetic wave signal that is coupled out can be received by the detector in blade 32 outsides.Signal is in conducting state.
Relative position between fixing then two blades reduces the temperature of indium antimonide intrinsic semiconductor wafer, make minimum frequency surface plasma wave transmission range less than before distance between two blades setting.At this moment, blade 32 cutting edges below does not have electromagnetic wave signal to be coupled out, and promptly signal is in off state.Such as cooling the temperature to-30
℃, can know that according to above formula this moment, surface plasma wave was the transmission range of 0.2THz in the maximal value of the transmission range of indium antimonide intrinsic semiconductor wafer surface
δ Spp =14.7mm, the surface plasma wave in the 0.2-0.4THz scope exhaust in indium antimonide intrinsic semiconductor wafer surface before below being transferred to blade 32 cutting edges.So, when temperature by 30 ℃ to-30
℃The time, the signal that is transmitted becomes disconnected by logical.On the contrary, when temperature by-30
℃To 30
℃The time, the signal that is transmitted is by disconnected flexible.Can realize the wide band electromagnetic wave of 0.2-0.4THz frequency range is carried out switch modulation through-30 ℃ to 30 ℃ temperature transition.
The non-return-to-zero modulation
Modulation is similar with making zero; Indium antimonide intrinsic semiconductor (its plasma frequency at normal temperatures is in the 1.9-2.0THz scope) wafer 2 is placed horizontally on the temperature control equipment 5; 31,32, two blades of two metal blades of parallel placement are downward perpendicular to the upper surface and the cutting edge of indium antimonide intrinsic semiconductor wafer 2 above indium antimonide intrinsic semiconductor wafer 2.Temperature intrinsic semiconductor is dull and stereotyped through temperature control equipment 5 remains on 30 ℃; Cutting edge with wide band electromagnetic wave 1 (like frequency range at 0.2-0.4THz) directive blade 31; Make that at indium antimonide intrinsic semiconductor wafer 2 surface excitation surface plasma waves 4 this surface plasma wave 4 is propagated along the 2 surface transmission of indium antimonide intrinsic semiconductor wafer and to the cutting edge place of blade 32.The position of regulating two blades makes cutting edge and the distance between indium antimonide intrinsic semiconductor wafer 2 upper surfaces of two blades less than the surface plasma wave 4 aerial attenuation distances of 0.4THz; Simultaneously, the thickness of selected indium antimonide intrinsic semiconductor wafer 2 is greater than the attenuation distance of surface plasma wave 4 in indium antimonide intrinsic semiconductor wafer 2 of 0.2THz.The regulation and control step is exemplified below:
With the fixed distance between two blades is 30mm.Under 30 ℃ or higher temperature (for example 40 ℃); The transmission range of the surface plasma wave of maximum frequency on indium antimonide intrinsic semiconductor wafer surface is all greater than 30mm; So under these two temperature; Surface plasma wave can both be transferred to the cutting edge below of blade 32, and the detector that its electromagnetic wave that is coupled out can be set at blade 32 outsides detects.But compare with 30 ℃, in the time of 40 ℃, the carrier concentration n of indium antimonide intrinsic semiconductor is bigger, the plasma angular frequency of intrinsic semiconductor
pBigger; The imaginary part of the specific inductive capacity of intrinsic semiconductor and the absolute value of real part are bigger; Surface plasma wave is less along the attenuation coefficient of intrinsic semiconductor surface transmission in the time of 40 ℃, and surface plasma wave is longer when the transmission range of intrinsic semiconductor surface plasma wave compares at 30 ℃ in the time of 40 ℃.Therefore, compared to 30 ℃, in the time of 40 ℃, the electromagnetic intensity that is coupled out from the cutting edge below is stronger.So, can realize control through the temperature of control intrinsic semiconductor, thereby realize the electromagnetic intensity that is coupled out is regulated and control intrinsic semiconductor surface plasma-wave attenuation coefficient.Above step can realize the wide band electromagnetic wave to 0.2-0.4THz, even than the more electromagnetic non-return-to-zero modulation of low frequency of this scope.
Can know from above modulated process, though it is the present invention also adopts the modulation of temperature adjustment realization surface plasma wave, different fully with the principle of existing surface plasma wave temp control switch.Existing surface plasma wave temp control switch is to utilize the plasma frequency of temperature control intrinsic semiconductor and the relative size realization switch modulation of the plasma frequency of being transmitted; Under off state, the intrinsic semiconductor surface can not produce surface plasma wave.And adopt modulator approach of the present invention; There is surface plasma wave all the time in the intrinsic semiconductor surface; But different temperatures lower surface plasma wave can change along the attenuation coefficient of semiconductor surface transmission; Surface plasma wave also can change in the transmission range of semiconductor surface, makes the surface plasma wave of blade 32 cutting edges below and the electromagnetic intensity that is coupled out change thereupon.Through selecting suitable blade distance, less temperature range promptly capable of using realizes adopting the electromagnetic wave of other frequency ranges that existing method can't regulate and control to realize making zero or the non-return-to-zero modulation down to the same terms.
Claims (4)
1. based on the electromagnetic wave temperature modulation method of surface plasma wave transmission range; It is characterized in that; Two metal blades that are parallel to each other are set: first blade and second blade above the intrinsic semiconductor planar surface; The cutting edge of two metal blades all vertically points to intrinsic semiconductor plate surface, and two metal blade cutting edges equate with the distance on intrinsic semiconductor plate surface; From the electromagnetic wave of the dull and stereotyped gap location transmission frequency of the cutting edge of this blade of lateral of first blade and intrinsic semiconductor less than the intrinsic semiconductor plasma frequency; At intrinsic semiconductor planar surface excitating surface plasma ripple, this surface plasma wave is transmitted to the cutting edge below of second blade along the intrinsic semiconductor planar surface by the cutting edge below of first blade; Keep the distance between first blade and second blade constant; Through the dull and stereotyped temperature of adjustment intrinsic semiconductor; Make said surface plasma wave change in the transmission range of intrinsic semiconductor planar surface; The electromagnetic intensity that the second blade cutting edge place is coupled out changes thereupon, thereby realizes electromagnetic modulation.
2. according to claim 1 based on the electromagnetic wave temperature modulation method of surface plasma wave transmission range, it is characterized in that said electromagnetic wave is a wide band electromagnetic wave; The temperature that said adjustment intrinsic semiconductor is dull and stereotyped; Refer to the dull and stereotyped temperature of intrinsic semiconductor is changed between first temperature and second temperature; Under first temperature, the surface plasma wave of the low-limit frequency that wide band electromagnetic wave excited in the transmission range of intrinsic semiconductor planar surface less than the distance between first blade and second blade; Under second temperature, the surface plasma wave of the highest frequency that wide band electromagnetic wave excited in the transmission range of intrinsic semiconductor planar surface greater than the distance between first blade and second blade.
3. according to claim 1 based on the electromagnetic wave temperature modulation method of surface plasma wave transmission range, it is characterized in that said electromagnetic wave is a wide band electromagnetic wave; During the temperature of adjustment intrinsic semiconductor plate, temperature satisfy all the time the surface plasma wave that makes the highest frequency that wide band electromagnetic wave excites in the transmission range of intrinsic semiconductor planar surface greater than the distance between two metal blades.
4. according to claim 1 based on the electromagnetic wave temperature modulation method of surface plasma wave transmission range; It is characterized in that; The distance on said two metal blade cutting edges and intrinsic semiconductor plate surface is less than the aerial attenuation distance of the surface plasma wave of low-limit frequency, and the thickness of said intrinsic semiconductor plate is greater than the attenuation distance of surface plasma wave in this intrinsic semiconductor plate of highest frequency; The frequency of said intrinsic semiconductor flat board plasma frequency and incident electromagnetic wave at normal temperatures is approaching.
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| CN111279182A (en) * | 2019-01-18 | 2020-06-12 | 合刃科技（深圳）有限公司 | Method and system for detecting metal surface |
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| CN102096269A (en) * | 2011-01-18 | 2011-06-15 | 南京邮电大学 | Terahertz surface plasma wave optical modulator and modulation method thereof |
| CN102176521A (en) * | 2010-12-08 | 2011-09-07 | 南京邮电大学 | Terahertz surface plasma wave temperature control switch and control method thereof |
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| CN102087211A (en) * | 2010-12-08 | 2011-06-08 | 南京邮电大学 | Terahertz spectral analysis device and detection method for biofilm |
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Application publication date: 20121017 |