CN102094186A - Gas supply equipment - Google Patents
Gas supply equipment Download PDFInfo
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- CN102094186A CN102094186A CN2009102540361A CN200910254036A CN102094186A CN 102094186 A CN102094186 A CN 102094186A CN 2009102540361 A CN2009102540361 A CN 2009102540361A CN 200910254036 A CN200910254036 A CN 200910254036A CN 102094186 A CN102094186 A CN 102094186A
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Abstract
The invention relates to gas supply equipment for leading a gas to a process cavity of a plasma enhanced chemical vapor deposition system. The gas supply equipment at least comprises a gas inlet tube, a process gas tube, a clean gas tube, a remote plasma source and a regulating valve, wherein the gas inlet tube enters the process cavity from outside; the remote plasma source is connected with a clean gas source; the clean gas tube is connected with the gas inlet tube and the remote plasma source and used for inputting a clean gas into the gas inlet tube from the remote plasma source; the process gas tube is connected with the gas inlet tube and a process gas source and used for inputting a process gas into the gas inlet tube; and the regulating valve is arranged in the gas inlet tube and used for closing a passage positioned between the clean gas tube and the gas inlet tube to prevent the process gas from entering the clean gas tube when the process gas is led into the process cavity.
Description
Technical field
The invention relates to a kind of plasma enhanced chemical vapor deposition (PECVD) system, and particularly relevant for a kind of gas supply equipment that is used for high frequency plasma enhanced chemical vapor deposition system.
Background technology
The plasma enhanced chemical vapor deposition system has been a thin film deposition processes most important and main in the industry of thin film solar cell at present.Such as the needed rete of all thin film solar cells can make by the PECVD system.Usually in the process cavity of PECVD system, can be included in the technology of deposit film on the substrate and the technology of cleaning procedure cavity.What therefore, generally be fed to process cavity has process gas that deposit film uses and Clean-clean air at least.
Recently, in response to large-area thin film solar cell, (Remote Plasma Source RPS) cleans cavity, for example removes institute's cumulative film on electrode and the chamber wall can to dispose long-range electric slurry source at the process cavity of big area type PECVD system.This is because compared to producing the traditional way that the electricity slurry cleans with radio frequency (RF) electricity slurry source excitation fluoro-gas source, there are etch capabilities and more large-area cleaning performance faster in long-range electric slurry source.Therefore, how long-range electric slurry source is integrated in the high frequency PECVD system effectively, its mechanism design (as gas piping) is important key.
In order to improve the cleaning performance of RPS, tend to utilize the caliber that increases the RPS outlet side to improve the clean air air input at present, desired the effect of reaching to reach.But the increase of caliber can improve stray capacitance herein, cause local electricity slurry to produce, and then film forming is blocked the RPS air outlet.This situation is especially more obvious in high frequency PECVD system, and then causes shorten the work-ing life in long-range electric slurry source.
Summary of the invention
The invention provides a kind of gas supply equipment, produce in case terminate in the unusual film forming phenomenon of the outlet side in long-range electric slurry source, and then improve the work-ing life in long-range electric slurry source.
The present invention proposes a kind of gas supply equipment, is to be used for the process cavity of pilot gas to plasma enhanced chemical vapor deposition (PECVD) system.Such gas supply equipment comprises at least and enters the intravital inlet pipe of process cavity, a process gas pipe, a clean air pipe, a long-range electric slurry source and a modulation valve from the outside of process cavity.Described long-range electric slurry source connects a purge gas source, and the clean air pipe then connects inlet pipe and long-range electric slurry source, in order to a clean air is imported inlet pipe from long-range electric slurry source.As for the process gas pipe is to connect an above-mentioned inlet pipe and a process gas source, in order to a process gas is imported inlet pipe.And the modulation valve is to be arranged in the inlet pipe, is used for closing the path between above-mentioned clean air pipe and the above-mentioned inlet pipe, enters the clean air pipe to avoid process gas to lead during the above-mentioned process cavity.
In one embodiment of this invention, the frequency in above-mentioned long-range electric slurry source is for example between 20MHz-100MHz.
In one embodiment of the invention, above-mentioned inlet pipe for example is positioned at the position of central authorities ± 30% of process cavity.
In one embodiment of this invention, the caliber of above-mentioned clean air pipe is greater than the caliber of above-mentioned process gas pipe.
In one embodiment of this invention, the caliber of above-mentioned clean air pipe 10mm-60mm for example.
In one embodiment of this invention, above-mentioned modulation valve comprises metal or the made valve of stainless steel.
In one embodiment of this invention, the 30mm-100mm for example of the distance between above-mentioned modulation valve and the process cavity.
In one embodiment of this invention, a kind of gas or the compound of above gas or the mixture of selecting in the gaseous group that above-mentioned process gas for example is made up of B2H6, CO2, CO, GeH4, H2, He, N2O, PH3, SiH4, SiF4 and SiH6.
In one embodiment of this invention, a kind of gas or the compound of above gas or the mixture of selecting in the gaseous group that above-mentioned clean air for example is made up of Ar, H2, NF3 and SF6.
In one embodiment of this invention, above-mentioned inlet pipe also can comprise a ceramic insulation portion, is located between above-mentioned technology and clean air pipe and the above-mentioned process cavity.
Based on above-mentioned, gas supply equipment integrated process gas of the present invention and the electric slurry of cleaning source are with single inlet pipe introducing technology cavity, and, a modulation valve prevents that stray capacitance from producing by being set, avoid path between clean air pipe and the inlet pipe because of above-mentioned stray capacitance produces unusual film forming phenomenon, improve the sedimentation rate of pecvd process simultaneously, also effectively improve long-range electric slurry source at the intravital cleaning efficiency of process cavity.
Brief description of drawingsfig
Figure 1A and Figure 1B are the running synoptic diagram according to a kind of gas supply equipment of the first embodiment of the present invention.
Fig. 2 is the application synoptic diagram of the gas supply equipment of Figure 1A (with Figure 1B).
Fig. 3 then is the synoptic diagram according to a kind of PECVD system of the second embodiment of the present invention.
[primary clustering nomenclature]
100: gas supply equipment
102,200: process cavity
104: inlet pipe
106: the clean air pipe
108: long-range electric slurry source
110: the process gas pipe
112: the modulation valve
114: gas piping
116: purge gas source
118,122: valve
120: process gas source
124: path
The 300:PECVD system
302: the gas sprinkler head
304: substrate
306: substrate holder
308: radio frequency power source
310: ceramic insulation portion
D: distance
φ 1, φ 2: caliber
For above-mentioned feature and advantage of the present invention can be become apparent, embodiment cited below particularly, and cooperate appended graphic being described in detail below.
Embodiment
Below please refer to graphic so that Liao separates technology of the present invention more fully.Though this paper is with the graphic embodiments of the invention that show, the present invention still can be with multiple multi-form the practice, and it should be interpreted as being limited to embodiment as herein described.And in graphic for for the purpose of clear and definite, not according to the size and the relative dimension thereof in each member of true scale and zone.
Figure 1A and Figure 1B are the running synoptic diagram according to a kind of gas supply equipment of the first embodiment of the present invention.
Please earlier with reference to Figure 1A, the gas supply equipment 100 of first embodiment is to be used for the process cavity 102 of pilot gas to plasma enhanced chemical vapor deposition (PECVD) system.The gas supply equipment 100 of Fig. 1 comprises inlet pipe 104, a clean air pipe 106, one long-range electric slurry source (RPS) 108, a process gas pipe 110 and a modulation valve 112 that enters from the outside of process cavity 102 in the process cavity 102.Above-mentioned inlet pipe 104 for example is positioned at the position of central authorities ± 30% of process cavity 102, is preferably the position of central authorities ± 10% that is positioned at process cavity 102.But be noted that when process cavity 102 was the cavity of big area PECVD system, a plurality of inlet pipe 104 that often need to arrange in pairs or groups were so the position of above-mentioned inlet pipe 104 only is the embodiment situation that expression is used for single inlet pipe 104.
In the present embodiment, long-range electric slurry source 108 is connected to a purge gas source 116 by a gas piping 114, and the frequency in above-mentioned long-range electric slurry source for example between 20MHz-100MHz, is preferably between the 25MHz-45MHz.In addition; valve 118 can be set in gas piping 114 usually control clean air (being " point " shown in Figure 1A) and enter flowing of long-range electric slurry source 108, wherein a kind of gas or the compound of above gas or the mixture of selecting in the gaseous group that clean air for example is made up of Ar, H2, NF3 and SF6.Clean air pipe 106 then connects inlet pipe 104 and long-range electric slurry source 108, in order to above-mentioned clean air from long-range electric slurry source 108 input inlet pipe 104.Therefore as Figure 1A, when valve 118 was opened, clean air can flow into long-range electric slurry source 108 to produce the clean air of high dissociation yield, enters clean air pipe 106 again, enters process cavity 102 via inlet pipe 104 at last.In general, the caliber φ 1 of clean air pipe 106 is bigger than the caliber φ 2 of process gas pipe 110; For instance, the caliber φ 1 of clean air pipe 106 is 10mm-60mm for example, is preferably 25mm-40mm.Above-mentioned process gas pipe 110 then is to connect an inlet pipe 104 and a process gas source 120, and valve 122 can be set in process gas pipe 110 usually come the CONTROL PROCESS gas flow.
Then, please refer to Figure 1B, when valve 122 is opened, process gas (being " point " shown in Figure 1B) can enter process cavity 102 by inlet pipe 104, wherein a kind of gas or the compound of above gas or the mixture of selecting in the gaseous group that process gas for example is made up of B2H6, CO2, CO, GeH4, H2, He, N2O, PH3, SiH4, SiF4 and SiH6.Process gas enter process cavity 102 during because the caliber φ 1 of clean air pipe 106 obviously can be bigger than the caliber φ 2 of process gas pipe 110, so process gas enters clean air pipe 106 most probably.Therefore in first embodiment, modulation valve 112 is set in inlet pipe 104, is used for closing the path 124 between clean air pipe 106 and the inlet pipe 104.Above-mentioned modulation valve 112 for example is metal or the made valve of stainless steel-like.And in the present embodiment, the distance D between modulation valve 112 and the process cavity 102 is 30mm-100mm for example.
In addition, though a process gas source 120 and a purge gas source 116 are respectively arranged in the present embodiment, but the present invention is not limited to this, should know in the situation of using kinds of processes gas and/or multiple clean air, can there be several process gas source and/or several purge gas source to be connected respectively to inlet pipe 104, and on the path between each clean air pipe and the inlet pipe 104, modulation valve 112 be set.In another embodiment, process gas source and purge gas source can also be with a kind of gas, and in this case, process gas source promptly is equal to purge gas source.
Fig. 2 is the application synoptic diagram of the gas supply equipment of Figure 1A (with Figure 1B), wherein the use element numbers representative identical member identical with Figure 1A and Figure 1B.
Please refer to Fig. 2, when process cavity 200 is when being used for the PECVD system of large-area substrates, because process cavity 200 itself has big area, so, need a plurality of gas supply equipments 100 of collocation in order to make the uniformity coefficient of deposition and cleaning procedure.Be to illustrate two gas supply equipments 100 in this figure, but still more gas supply equipment 100 can be set according to the size of process cavity 200.
Fig. 3 then is the synoptic diagram according to a kind of PECVD system of the second embodiment of the present invention, wherein uses the element numbers identical with first embodiment to represent identical member.
Please refer to Fig. 3, general PECVD system 300 comprises process cavity 102.The substrate holder 306 that in process cavity 102, has a gas sprinkler head 302 that links to each other with the inlet pipe 104 of gas supply equipment 100 and be used for placing substrate 304.Above-mentioned gas sprinkler head 302 can make process gas and/or clean air from inlet pipe 104 enter after, evenly be sprayed onto the substrate 304 on the substrate holder 306 under the gas sprinkler head 302.And gas sprinkler head 302 and substrate holder 306 are exactly the upper and lower electrode in the PECVD system 300 usually.Therefore, PECVD system 300 also has a radio frequency power (RF Power) source 308, is coupled to gas sprinkler head 302 and substrate holder 306 in the process cavity 102, to form the electricity slurry in process cavity 102.Because the material of inlet pipe 104 and gas sprinkler head 302 generally all is metal or stainless steel, institute thinks and avoids RF to move in the inlet pipe 104 and produce parasitic capacitance effect, causes a large amount of films and dust deposit in herein.Therefore in the present embodiment, inlet pipe 104 also can have a ceramic insulation portion 310, is located between technology and clean air pipe 110,106 and the above-mentioned process cavity 102.
Except the PECVD system 300 of second embodiment, the persond having ordinary knowledge in the technical field of the present invention should know that gas supply equipment 100 also can be applicable to other PECVD system, is not limited to the foregoing description.
In sum, gas supply equipment of the present invention is integrated with single inlet pipe introducing technology cavity with process gas and from the clean air in long-range electric slurry source, and prevent that by a modulation valve is set stray capacitance from producing, avoid path between clean air pipe and the inlet pipe because of above-mentioned stray capacitance produces unusual film forming phenomenon.And gas supply equipment of the present invention is because used long-range electric slurry source, so can improve cleaning efficiency simultaneously.
Though the present invention discloses as above with embodiment; right its is not in order to limit the present invention; have in the technical field under any and know the knowledgeable usually; without departing from the spirit and scope of the present invention; when doing a little change and retouching, so protection scope of the present invention is as the criterion when looking accompanying the claim person of defining.
Claims (10)
1. gas supply equipment is used for a process cavity of pilot gas to plasma enhanced chemical vapor deposition system, it is characterized in that this gas supply equipment comprises:
One inlet pipe enters in this process cavity from the outside of this process cavity;
One long-range electric slurry source connects a purge gas source;
One clean air pipe connects this inlet pipe and this long-range electric slurry source, in order to a clean air is imported this inlet pipe from this long-range electric slurry source;
One process gas pipe connects this inlet pipe and a process gas source, in order to a process gas is imported this inlet pipe; And
One modulation valve is arranged in this inlet pipe, is used for closing the path between this clean air pipe and this inlet pipe, enters this clean air pipe to avoid this process gas to lead during this process cavity.
2. gas supply equipment as claimed in claim 1 is characterized in that, the frequency in this long-range electric slurry source is between 20MHz-100MHz.
3. gas supply equipment as claimed in claim 1 is characterized in that, this inlet pipe is positioned at the position of central authorities ± 30% of this process cavity.
4. gas supply equipment as claimed in claim 1 is characterized in that the caliber of this clean air pipe is greater than the caliber of this process gas pipe.
5. gas supply equipment as claimed in claim 1 is characterized in that, the caliber of this clean air pipe is 10mm-60mm.
6. gas supply equipment as claimed in claim 1 is characterized in that, this modulation valve comprises metal or the made valve of stainless steel.
7. gas supply equipment as claimed in claim 1 is characterized in that, the distance between this modulation valve and this process cavity is 30mm-100mm.
8. gas supply equipment as claimed in claim 1, it is characterized in that a kind of gas or the compound of above gas or the mixture selected in the gaseous group that this process gas is made up of B2H6, CO2, CO, GeH4, H2, He, N2O, PH3, SiH4, SiF4 and SiH6.
9. gas supply equipment as claimed in claim 1 is characterized in that, a kind of gas or the compound of above gas or the mixture selected in the gaseous group that this clean air is made up of Ar, H2, NF3 and SF6.
10. gas supply equipment as claimed in claim 1 is characterized in that, this inlet pipe more comprises a ceramic insulation portion, is located between this process gas pipe and this clean air pipe and this process cavity.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200910254036 CN102094186B (en) | 2009-12-15 | 2009-12-15 | Gas supply equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200910254036 CN102094186B (en) | 2009-12-15 | 2009-12-15 | Gas supply equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102094186A true CN102094186A (en) | 2011-06-15 |
| CN102094186B CN102094186B (en) | 2013-03-13 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN 200910254036 Active CN102094186B (en) | 2009-12-15 | 2009-12-15 | Gas supply equipment |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104103483A (en) * | 2013-04-10 | 2014-10-15 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Air inlet apparatus and plasma processing device |
| CN104962880A (en) * | 2015-07-31 | 2015-10-07 | 合肥京东方光电科技有限公司 | Vapor deposition equipment |
| CN107267961A (en) * | 2017-06-28 | 2017-10-20 | 武汉华星光电技术有限公司 | Vapor deposition apparatus |
| CN113770122A (en) * | 2021-09-13 | 2021-12-10 | 浙江爱旭太阳能科技有限公司 | Cleaning method of PECVD (plasma enhanced chemical vapor deposition) equipment |
| CN114574837A (en) * | 2022-03-07 | 2022-06-03 | 苏州迈为科技股份有限公司 | Structure and method for solving parasitic plasma in plasma processing equipment |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI279260B (en) * | 2004-10-12 | 2007-04-21 | Applied Materials Inc | Endpoint detector and particle monitor |
| US20060090773A1 (en) * | 2004-11-04 | 2006-05-04 | Applied Materials, Inc. | Sulfur hexafluoride remote plasma source clean |
-
2009
- 2009-12-15 CN CN 200910254036 patent/CN102094186B/en active Active
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104103483A (en) * | 2013-04-10 | 2014-10-15 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Air inlet apparatus and plasma processing device |
| CN104103483B (en) * | 2013-04-10 | 2016-08-31 | 北京北方微电子基地设备工艺研究中心有限责任公司 | A kind of inlet duct and plasma processing device |
| CN104962880A (en) * | 2015-07-31 | 2015-10-07 | 合肥京东方光电科技有限公司 | Vapor deposition equipment |
| CN104962880B (en) * | 2015-07-31 | 2017-12-01 | 合肥京东方光电科技有限公司 | A kind of vapor deposition apparatus |
| US10329666B2 (en) | 2015-07-31 | 2019-06-25 | Boe Technology Group Co., Ltd. | Vapor deposition apparatus |
| CN107267961A (en) * | 2017-06-28 | 2017-10-20 | 武汉华星光电技术有限公司 | Vapor deposition apparatus |
| CN113770122A (en) * | 2021-09-13 | 2021-12-10 | 浙江爱旭太阳能科技有限公司 | Cleaning method of PECVD (plasma enhanced chemical vapor deposition) equipment |
| CN114574837A (en) * | 2022-03-07 | 2022-06-03 | 苏州迈为科技股份有限公司 | Structure and method for solving parasitic plasma in plasma processing equipment |
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| CN102094186B (en) | 2013-03-13 |
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