CN102087425A - 用于电光调制器的波导电容器 - Google Patents
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Abstract
一种用于电光调制器的波导电容器,包括脊波导,所述脊波导的波导脊上刻蚀有槽型结构,并在其上加载半导体材料,所加载的半导体材料和脊波导之间有绝缘层隔离,所加载半导体材料填充至所刻蚀的槽中,其中所述加载后的波导仍保持脊波导的形状,形成封盖式波导电容;所述绝缘层上直接加载半导体材料;所述脊波导的波导脊上刻蚀有纵向槽或周期性分布的横向槽结构,所述纵向槽使波导脊形成双脊结构,所述横向槽的间隔周期略短于光波长的二分之一。本发明与现有技术相比,脊波导的波导脊上刻蚀有槽型结构,提高了单位波导导模模斑横截面所携带的电容值,同时,波导导模的有效模斑尺寸比现有的波导电容小,对光的限制因子大,有利于提高调制器的效率。
Description
技术领域
本发明涉及一种集成光电子器件,特别是一种光波导器件。
背景技术
基于硅的电光调制器利用自由载流子色散效应来调制光波相位移。在这些器件中,电光调制的物理媒体是一个光波导和电容器的复合体,在这个复合体中,电容器所存储的电荷量的改变将改变光波在波导中传播时所积累的相位移。这个复合体我们这里称为波导电容。
无论是金属-氧化物-半导体MOS电容还是其他已被使用的波导电容,其调制效率都不高,主要体现在电容器中,电荷调制的区域在整个光波导的截面积内所占比例小,同时光波导的截面积大。
图1是现有技术MOS波导电容的示意图。图中:波导下覆盖层1,为原SOI圆晶片中的埋入二氧化硅,其上为硅脊波导平板区2、波导脊5,脊波导平板区2和波导脊5上部是绝缘层3,绝缘层3上加载半导体4。通过绝缘层3,所加载半导体4和波导脊5之间形成电容。同时,所加载半导体4和原脊波导一起形成新的波导。
图1所示的波导电容器,电荷调制的区域只是绝缘层上下十几个纳米的范围,而波导的模斑横截面积大于一个微米。光波导截面积大,波导电容电荷调制的区域在整个光波导的截面积内所占比例小,这使调制器效率低。
发明内容
本发明的目的是提供一种用于电光调制器的波导电容器,要解决的技术问题是提高基于互补金属氧化物半导体CMOS的电光调制器的效率。
本发明采用以下技术方案:
一种用于电光调制器的波导电容器,包括脊波导,所述脊波导的波导脊上刻蚀有槽型结构,并在其上加载半导体材料,所加载的半导体材料和脊波导之间有绝缘层隔离,所加载半导体材料填充至所刻蚀的槽中。其中,所述绝缘层上直接加载半导体材料,所述加载后的波导仍保持脊波导的形状,形成封盖式波导电容;所述脊波导的波导脊上刻蚀纵向槽形成一个双脊结构。
本发明公开的一种用于电光调制器的波导电容器,所述半导体材料为三五族化合物。
本发明公开的一种用于电光调制器的波导电容器,所述加载的半导体材料沿波导纵向形状宽度呈周期性变化。
一种用于电光调制器的波导电容器,包括脊波导,所述脊波导的波导脊上刻蚀有槽型结构,并在其上加载半导体材料,所加载的半导体材料和脊波导之间有绝缘层隔离,所加载半导体材料填充至所刻蚀的槽中;所述绝缘层上直接加载半导体材料。其中,所述加载后的波导仍保持脊波导的形状,形成封盖式波导电容;所述脊波导的波导脊上沿波导纵向周期性的刻有横向槽,其间隔周期略短于光波长的二分之一;所述横向槽从边到边贯通或不贯通。
本发明公开的一种用于电光调制器的波导电容器,所述半导体材料为三五族化合物。
本发明公开的一种用于电光调制器的波导电容器,所述加载的半导体材料沿波导纵向形状宽度呈周期性变化。
本发明与现有技术相比,脊波导的波导脊上刻蚀有槽型结构,提高了单位波导导模模斑横截面所携带的电容值,这是决定基于自由载流子色散效应的电光调制器的调制效率的关键参数,同时,波导导模的有效模斑尺寸比现有的波导电容小,对光的限制因子大,有利于提高调制器的效率。
附图说明
图1为现有技术基于SOI的MOS波导电容结构示意。
图2为本发明实施例基于SOI的双脊波导加载波导电容结构示意。
图3为本发明实施例基于SOI的双脊波导之栅极加载波导电容的结构。
图4(a)为本发明实施例基于SOI的双脊波导之非连续的栅极加载的波导电容结构的俯视图。
图4(b)为图4(a)中A点的截面图。
图4(c)为图4(a)中B点的截面图。
图5为本发明实施例封盖式周期性单脊波导之栅极加载的波导电容的结构图。
图6(a)为本发明实施例基于SOI的周期性单脊波导之栅极加载的波导电容结构的纵向图。
图6(b)为本发明实施例基于SOI的周期性单脊波导之栅极加载的波导电容结构的立体图。
具体实施方式
下面结合附图和实施例对本发明作进一步详细说明。
如图2所示,在绝缘体硅片SOI(Silicon on insulator)起始脊波导的波导脊5上刻有纵向槽7,形成双脊波导,槽的深度可任意选择,在所形成的双脊波导的表面,包括平板区2,通过氧化形成薄的二氧化硅绝缘层3;然后在其上对应于波导脊5的部分加载半导体材料6,所加载半导体材料6把所刻纵向槽7完全填充。绝缘层3的厚度小于10纳米,半导体材料6为单晶硅或多晶硅,加载方式为沉积或生长。
如图3所示的封盖式双脊波导波导电容,在起始的波导脊5上刻蚀纵向槽7形成一个双脊结构,然后在波导脊5和纵向槽7上形成栅极绝缘层3,在所述栅极绝缘层3上加载半导体层8。所述半导体层8可以是多晶硅,单晶硅,或三五族化合物。在所述半导体层8之上覆盖低折射率绝缘材料11,金属接触电极9提供在所加载半导体层8和原始硅层10的对外连接。如图6所示,加载后的波导仍保持脊波导的形状,提供对光波的横向限制,而所述半导体层8和所述绝缘层3下面的硅10形成电容。
加载半导体层8后,光波导的波导核心(waveguide core)由原来的脊波导的波导脊5和半导体层8在波导脊之上的区域组合形成,波导脊5和半导体层8之间由非常薄,小于10纳米的栅极绝缘层分开,不影响统一导模的形成。
双脊波导之栅极加载波导电容的制作过程和互补金属氧化物半导体CMOS中的形成栅极多晶硅的过程完全一样。而极薄的栅极绝缘层有效地提高了波导电容的电容值,有利于降低电光调制器的功耗。
如图4(a)所示,波导脊5设置在中部,金属接触电极9设置在两侧,所加载半导体层的宽度沿波导传播方向呈周期性分布。波导脊5上A点和B点为沿波导方向的不同位置。如图4(b)所示,B点的横截面和图3所示实施例相似,加载半导体层8在横向展开。如图4(c)所示,A点的横截面所加载半导体层81在横向不展开。
如图5所示,封盖式周期性单脊波导电容是在原始的单脊波导的波导脊上沿波导纵向周期性地刻蚀横向槽后形成的结构。在起始的波导脊5上刻蚀沿纵向周期性分布的横向槽12,其间隔周期略短于光波长的二分之一,所述横向槽从边到边贯通或不贯通。然后在波导脊5和横向槽12上形成栅极绝缘层3,在所述栅极绝缘层3上加载半导体层8。所述半导体层8可以是多晶硅,单晶硅,或三五族化合物。在所述半导体层8之上覆盖低折射率绝缘材料11,金属接触电极9提供在所加载半导体层8和原始硅层10的对外连接。如图5所示,加载后的波导仍保持脊波导的形状,提供对光波的横向限制,而所述半导体层8和所述绝缘层3下面的硅10形成电容。
如图6(a)所示,封盖式周期性单脊波导电容的二氧化硅层1上部的波导脊5,在波导脊5上刻蚀横向槽12,沿波导纵向周期性排列,其间隔周期略短于光波长的二分之一,使光在波导中的传播速度变慢。所加载半导体层8与被刻蚀的波导脊5之间有绝缘层3。如图6(b)所示,所加载半导体层8在横向展开。同时,所刻蚀的横向槽12可以从边到边贯通,也可以不贯通。
Claims (6)
1.一种用于电光调制器的波导电容器,包括脊波导,所述脊波导的波导脊上刻蚀有槽型结构,并在其上加载半导体材料,所加载的半导体材料和脊波导之间有绝缘层隔离,所加载半导体材料填充至所刻蚀的槽中,其特征在于:所述绝缘层上直接加载半导体材料;所述加载后的波导仍保持脊波导的形状,形成封盖式波导电容;所述脊波导的波导脊上刻蚀纵向槽形成一个双脊结构。
2.根据权利要求1所述的用于电光调制器的波导电容器,其特征在于:所述半导体材料为三五族化合物。
3.根据权利要求1所述的用于电光调制器的波导电容器,其特征在于:所述加载的半导体材料沿波导纵向形状宽度呈周期性变化。
4.一种用于电光调制器的波导电容器,包括脊波导,所述脊波导的波导脊上刻蚀有槽型结构,并在其上加载半导体材料,所加载的半导体材料和脊波导之间有绝缘层隔离,所加载半导体材料填充至所刻蚀的槽中,其特征在于:所述绝缘层上直接加载半导体材料;所述加载后的波导仍保持脊波导的形状,形成封盖式波导电容;所述脊波导的波导脊上沿波导纵向周期性的刻有横向槽,其间隔周期略短于光波长的二分之一;所述横向槽从边到边贯通或不贯通。
5.根据权利要求4所述的用于电光调制器的波导电容器,其特征在于:所述半导体材料为三五族化合物。
6.根据权利要求4所述的用于电光调制器的波导电容器,其特征在于:所述加载的半导体材料沿波导纵向形状宽度呈周期性变化。
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