CN102086512A - Substrate processing apparatus and vacuum formation method thereof - Google Patents
Substrate processing apparatus and vacuum formation method thereof Download PDFInfo
- Publication number
- CN102086512A CN102086512A CN2010105327045A CN201010532704A CN102086512A CN 102086512 A CN102086512 A CN 102086512A CN 2010105327045 A CN2010105327045 A CN 2010105327045A CN 201010532704 A CN201010532704 A CN 201010532704A CN 102086512 A CN102086512 A CN 102086512A
- Authority
- CN
- China
- Prior art keywords
- vacuum cavity
- cavity
- preliminary vacuum
- vacuum
- preliminary
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
- F16K—VALVES; TAPS; COCKS; ACTUATING-FLOATS; DEVICES FOR VENTING OR AERATING
- F16K51/00—Other details not peculiar to particular types of valves or cut-off apparatus
- F16K51/02—Other details not peculiar to particular types of valves or cut-off apparatus specially adapted for high-vacuum installations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67201—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the load-lock chamber
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The invention relates to a substrate processing apparatus including a plurality of working lines, each of which includes a first fore-vacuum cavity and a second fore-vacuum cavity arranged between a vacuum cavity and air; a pump to form vacuum state in the first fore-vacuum cavity and the second fore-vacuum cavity; and a balancing valve which is arranged between the first fore-vacuum cavity and the second fore-vacuum cavity to balance the vacuum degree of the first fore-vacuum cavity and the second fore-vacuum cavity. The substrate processing apparatus shortens duration of an entire project by reducing the vacuum formation time for the fore-vacuum cavities and prevents the substrate from being damaged during conversion between vacuum state and atmospheric pressure state.
Description
Technical field
The invention provides a kind of substrate board treatment and vacuum formation method thereof (Apparatus forProcessing Substrate and Method for Producing Vacuum thereof).
Background technology
Under as the vacuum state of sputter, carry out in the operation that plated body handles, need to drop into and keep the vacuum cavity of vacuum state and, and may need repeatedly preliminary vacuum (Loadlock) cavity of vacuum and atmospheric pressure state by the evaporation thing.
At this moment, shorten the vacuum state formation time of preliminary vacuum cavity, that is, the shortening of the time of bleeding and the shortening of whole activity time have direct correlation, therefore, can shorten the required time of whole operation by shortening this time.
But, in order to shorten the vacuum state formation time, needing more air extractor, this can cause expense to increase, and therefore implements some difficulty.
And the quick conversion of the vacuum of preliminary vacuum cavity and atmospheric pressure state can cause the variation rapidly of preliminary vacuum inside cavity pressure, forms blast air in the preliminary vacuum inside cavity, may cause by the damage of evaporation thing.
Summary of the invention
The technical problem to be solved in the present invention is to provide a kind of substrate board treatment and vacuum formation method thereof, to shorten the vacuum formation time of preliminary vacuum cavity.
In order to solve the problems of the technologies described above, the invention provides a kind of substrate board treatment, its characteristics are, comprising: a plurality of operating lines, it comprises the 1st preliminary vacuum cavity and the 2nd preliminary vacuum cavity that is arranged between vacuum cavity and the air respectively; Pump portion is used to form the vacuum state of the 1st preliminary vacuum cavity and the 2nd preliminary vacuum inside cavity; Equilibrium valve, it is arranged between the 1st preliminary vacuum cavity and the 2nd preliminary vacuum cavity, is used for the vacuum tightness between homogenizing the 1st preliminary vacuum cavity and the 2nd preliminary vacuum cavity.
Said pump portion comprises respectively and the 1st preliminary vacuum cavity and the 2nd preliminary vacuum cavity bonded the 1st pump housing and the 2nd pump housing, also can comprise and the 1st preliminary vacuum cavity and the public pump housing of the 2nd preliminary vacuum cavity bonded.
The aforesaid substrate treatment unit can also comprise the vacuum chamber that is arranged between the 1st preliminary vacuum cavity and the 2nd preliminary vacuum cavity, and the 1st preliminary vacuum cavity and the 2nd preliminary vacuum cavity can be incorporated into the end of a plurality of these operating lines respectively.
The inwall of the communicating pores on each substrate board treatment in the aforesaid substrate treatment unit, above-mentioned the 1st preliminary vacuum cavity and sidewall that the 2nd preliminary vacuum cavity is connected is formed slopely, with the pressure of the gas that disperses to flow into the 1st preliminary vacuum cavity.
Above-mentioned the 1st preliminary vacuum cavity of substrate board treatment comprises that also an anti-current moves member, the moving member of this anti-current is incorporated into the communicating pores the place ahead on the 1st preliminary vacuum cavity and the sidewall that the 2nd preliminary vacuum cavity is connected, with the pressure of the gas of dispersion inflow the 1st preliminary vacuum cavity.
At this moment, the moving member of this anti-current is the plate type member that is arranged at this communicating pores the place ahead, and the one side of the moving member of this anti-current is formed with flow orifice, to help this gas flow.And the moving member of this anti-current comprises a plurality of these plate type members.
Substrate board treatment also comprises a filter house, is used for being captured in the particle of mobile gas between the 1st preliminary vacuum cavity and the 2nd preliminary vacuum cavity.
And this filter house is by providing magnetic force to gather this particle for this particle.
In order to solve the problems of the technologies described above, the present invention also provides a kind of vacuum formation method of substrate board treatment, this substrate board treatment comprises: a plurality of operating lines, and it comprises the 1st preliminary vacuum cavity and the 2nd preliminary vacuum cavity that is arranged between vacuum cavity and the air respectively; Pump portion, be used to form the vacuum state of the 1st preliminary vacuum cavity and the 2nd preliminary vacuum inside cavity, its characteristics are that this vacuum formation method comprises: homogenization step, the vacuum tightness between the 2nd preliminary vacuum cavity of the 1st preliminary vacuum cavity of vacuum state and atmospheric pressure state is carried out homogenizing; Atmospheric pressure state forms step, forms atmospheric pressure state in the 1st preliminary vacuum inside cavity; And vacuum state forms step, utilizes this pump portion to form vacuum state in the 2nd preliminary vacuum inside cavity.
This substrate board treatment also comprises the 1st vacuum chamber that is arranged between the 1st preliminary vacuum cavity and the 2nd preliminary vacuum cavity, this vacuum formation method also comprised the step of the vacuum tightness between the 1st vacuum chamber and the 2nd preliminary vacuum cavity being carried out homogenizing before this homogenization step.
This substrate board treatment also comprises respectively at the 1st preliminary vacuum cavity and the 2nd preliminary vacuum cavity bonded 2-1 vacuum chamber and 2-2 vacuum chamber, this vacuum formation method is before this homogenization step, and this vacuum formation method also comprises the step of the vacuum tightness between this 2-2 vacuum chamber and the 2nd preliminary vacuum cavity being carried out homogenizing.
The vacuum formation method of this substrate board treatment also comprised the measuring process of the difference of the vacuum tightness between the 1st preliminary vacuum cavity and the 2nd preliminary vacuum cavity before this homogenization step, when the difference of this vacuum tightness during greater than set(ting)value, carry out this homogenization step.
According to embodiments of the invention, can effectively shorten the vacuum formation time of preliminary vacuum cavity, therefore, can shorten whole activity time, and can prevent in the vacuum of preliminary vacuum cavity and the damage of the substrate in the atmospheric pressure state switching process.
Description of drawings
Fig. 1 is the structural representation of substrate board treatment in one embodiment of the invention;
Fig. 2 is the floor map of the 1st preliminary vacuum cavity of substrate board treatment in one embodiment of the invention;
Fig. 3 is the structural representation of the filter house of substrate board treatment in one embodiment of the invention;
Fig. 4 is the structural representation of substrate board treatment in another embodiment of the present invention;
Fig. 5 is the structural representation of substrate board treatment in further embodiment of this invention;
Fig. 6 is the structural representation of substrate board treatment in further embodiment of this invention.
Wherein, Reference numeral:
111,116: the 1 preliminary vacuum cavitys 211,216: the 2 preliminary vacuum cavitys
150a, 150b: public valve 121,126: the public pump housing
Embodiment
Below come clear and definite feature of the present invention and advantage by accompanying drawing and detailed description of the invention.
Below, in conjunction with the accompanying drawings, the embodiment of substrate board treatment among the present invention and vacuum formation method thereof is elaborated, when accompanying drawings, identical or corresponding structure will represent that the multiple explanation will be omitted with identical Reference numeral.
Fig. 1 is the structural representation of substrate board treatment 100 in one embodiment of the invention.As shown in Figure 1, substrate board treatment 1000 in one embodiment of the invention comprises the 1st and the 2nd operating line (process line) 100,200 with the 1st and the 2nd preliminary vacuum cavity 111,116, pump portion and equilibrium valve 150a, thereby can shorten the vacuum formation time of the 1st and the 2nd preliminary vacuum cavity 111,116, shorten the overall work time, and can prevent the damage of substrate in the vacuum of the 1st and the 2nd preliminary vacuum cavity 111,116 and atmospheric pressure state switching process.
Substrate board treatment can be by carrying out certain processing at substrate surface, forming the device of the film of special component on its surface.At this moment, certain processing for example is sputter (sputtering).
This substrate can be the object being treated of being handled by substrate board treatment 1000, for example, and printed circuit board (PCB), semiconductor wafer and glass etc.
Operating line can be a processed in units device that is carried out sputter by a plurality of cavitys combinations.The 1st operating line 100 and the 2nd operating line 200 of operating line can be set up in parallel, this two adjacent settings of operating line and reduce the space is set.
The the 1st and the 2nd operating line 100,200 comprises: buffering cavity (buffer chamber) 112,115,212,215; Working cavity 113,114,213,214; And, preliminary vacuum cavity 111,116,211,216.
Buffering cavity 112,115,212,215 is arranged between preliminary vacuum cavity 111,116,211,216 and the working cavity (process chamber) 113,114,213,214, can be used as the wait cavity of the substrate that will put into working cavity 113,114,213,214.
Buffering cavity 112,115,212,215 can form vacuum state by the pump housing 122,125,222,225.At this moment, the valve body 132,135,232,235 between the pump housing 122,125,222,225 and buffering cavity 112,115,212,215 can be kept the vacuum state of buffering cavity 112,115,212,215.
Working cavity 113,114,213,214 can be the cavity that carries out sputter at substrate surface, can have two these working cavities on the operating line.Working cavity 113,114,213,214 also can have other devices that are used to realize sputter.
As cushion cavity 112,115,212,215, working cavity 113,114,213,214 also can form vacuum state by the pump housing 123,124,223,224, keeps vacuum state by the valve body 133,134,233,234 that is arranged between the working cavity 113,114,213,214 and the pump housing 123,124,223,224.
Can be provided with gate valve (gate valve) 141,142,143,144,145,241,242,243,244,245 between each cavity, this gate valve 141,142,143,144,145,241,242,243,244,245 is provided at the passage that can transfer substrate between each adjacent cavity, and can keep the resistance to air loss between each cavity.
As cushioning cavity 112,115,212,215 and working cavity 113,114,213,214, the cavity of keeping vacuum state is called vacuum cavity.
Preliminary vacuum cavity the 111,116,211, the 216th can temporarily hold substrate, makes substrate be dropped into or be discharged to the cavity of operating line 100,200.Preliminary vacuum cavity 111,116,211,216 combines with buffering cavity 112,115,212,215, and is incorporated into the end of operating line 100,200.And preliminary vacuum cavity 111,116,211,216 can be arranged between vacuum cavity and the air, and its inside is vacuum state and atmospheric pressure state repeatedly.
The preliminary vacuum cavity that is incorporated into the two ends of the 1st operating line 100 can be the 1st preliminary vacuum cavity 111,116, and the preliminary vacuum cavity that is incorporated into the two ends of the 2nd operating line 200 can be the 2nd preliminary vacuum cavity 211,216.
The 1st preliminary vacuum cavity 111,116 and the 2nd preliminary vacuum cavity 211,216 are combined with each inner inflow respectively to be had outside gas and forms atmospheric ventilation valve (ventilation valve, 160a, 160b, 260a, 260b).At this moment, the gas of inflow can comprise extraneous air or nitrogen (N
2).
Pump portion can form the vacuum state of the cavity of operating line, particularly comprise with the 1st preliminary vacuum cavity 111,116 bonded the 1st pump housing 121,126 and with the 2nd preliminary vacuum cavity 211,216 bonded the 2nd pump housing 221,226.
Be respectively arranged with valve body 131,136,231,236 between the 1st and the 2nd preliminary vacuum cavity 111,116,211,216 and the 1st and the 2nd pump housing 121,126,221,226, thereby keep the resistance to air loss between the cavity.
Be provided with equilibrium valve 150a, 150b between the 1st and the 2nd preliminary vacuum cavity 111,116,211,216. Equilibrium valve 150a, 150b provide the connecting passage between the 1st preliminary vacuum cavity 111,116 and the 2nd preliminary vacuum cavity 211,216, thereby realize the homogenizing of vacuum tightness between the 1st preliminary vacuum cavity 111,116 and the 2nd preliminary vacuum cavity 211,216.
Fig. 2 is the floor map of the 1st preliminary vacuum cavity 111 of substrate board treatment 1000 in one embodiment of the invention.As shown in Figure 2, a side of the 1st preliminary vacuum cavity 111 is combined with and is used for the pipe connecting 152 that is connected with the 2nd preliminary vacuum cavity 211, and the side that is combined with the 1st preliminary vacuum cavity 111 of pipe connecting 152 is formed with communicating pores 110a.
At this moment, the inwall 110b of the communicating pores 110a funnel shaped that to be its cross section increase gradually to the internal direction of the 1st preliminary vacuum cavity 111.
Thus, gas flows into the 1st preliminary vacuum cavity 111 when inner by communicating pores 110a, can prevent from the variation rapidly of pipe connecting 152 effluent air volumes, thereby can prevent the situation of the substrate pressurized of the 1st preliminary vacuum cavity 111 inside.
Just, by preventing the unexpected variation of preliminary vacuum inside cavity pressure, prevent the breakage of its internal base plate.
And,, be provided with the moving member 400 of anti-current of plate shape in the place ahead of communicating pores 110a in the 1st preliminary vacuum cavity 111 inside.The width of the moving member 400 of anti-current is greater than the width of communicating pores 110a.The moving member of anti-current is by preventing that gas by communicating pores 110a from directly colliding substrate and preventing that substrate is impaired.
And the moving member 400 of anti-current provides resistance to flow for the gas that flows into by communicating pores 110a, reduces the pressure that puts on substrate.
Whole face at the moving member 400 of anti-current can be formed with flow orifice 412,422, flow orifice 412,422 provides the gas flow passage that flows into by communicating pores 110a, thereby prevent that pressure from putting on the privileged site of substrate, make gas flow into whole the 1st preliminary vacuum cavity 111 inside.
The moving member 400 of the anti-current of plate shape can use two 410,420, at this moment, is formed at flow orifice 412, the 422 dislocation formation mutually of the moving member 400 of each anti-current, more can disperse the pressure of gas.
And the moving member 400 of anti-current can adopt four jiaos of box-like shapes non-plate shape, that center on communicating pores 110a.And the front relative with the substrate of the moving member 400 of anti-current do not have flow orifice 422, but is formed with flow orifice 422 in the side.
The structure of aforesaid the 1st preliminary vacuum cavity 111 inside equally also can be formed at the 2nd preliminary vacuum cavity 211 inside.
Fig. 3 is the synoptic diagram of the filter house 300 of substrate board treatment 1000 in one embodiment of the invention.Shown in Fig. 1,3, be provided with filter house 300 between the 1st preliminary vacuum cavity 111 and the 2nd preliminary vacuum cavity 211.
The part of pipe connecting 152 can be to a lateral buckling, and this bending part 152a is combined with filter house 300.In order to gather the particulate that is made of magnetic substance, filter house 300 can comprise the magnetite 310 that magnetic force is provided to particulate.
The 1st operating line 100 and the 2nd operating line 200 of the substrate board treatment 1000 in the present embodiment can move successively.
Promptly, have the 1st preliminary vacuum cavity 111 of substrate to be vacuum state if drop into, the 2nd preliminary vacuum cavity 211 is an atmospheric pressure state, and then the substrate in the 1st preliminary vacuum cavity 111 can be transplanted on adjacent buffering cavity, the 2nd preliminary vacuum cavity 211 is had substrate to be put to its inside by open.
Secondly, drop into the 2nd preliminary vacuum cavity 211 that substrate is arranged, externally open equilibrium valve 150a under the state that the inflow of air is stopped.At this moment, the 2nd preliminary vacuum cavity 211 gas inside can flow into the 1st preliminary vacuum cavity 111.Thus, the vacuum tightness between the 1st preliminary vacuum cavity 111 and the 2nd preliminary vacuum cavity 211 can realize homogenizing.
After the vacuum tightness homogenizing between the 1st preliminary vacuum cavity 111 and the 2nd preliminary vacuum cavity 211, equilibrium valve 150a is by locking, thus the resistance to air loss between the maintenance cavity.
Then, open the ventilation valve 160a of the 1st preliminary vacuum cavity 111, make extraneous gas flow into the 1st preliminary vacuum cavity 111 inside, at the 1st preliminary vacuum cavity 111 inner atmospheric pressure states that form.
In the homogenizing stage before, the 2nd preliminary vacuum cavity 211 inside have flowed into gas, therefore, can shorten in the 111 inner formation required times of atmospheric pressure state of the 1st preliminary vacuum cavity.
The 1st preliminary vacuum cavity 111 of atmospheric pressure state is by open, and substrate can be put to its inside.
Then, 221 pairs the 2nd preliminary vacuum cavity 211 gas inside of the 2nd pump housing are bled, thereby form the vacuum state of the 2nd preliminary vacuum cavity 211 inside.
At this moment, the 2nd preliminary vacuum cavity 211 gas inside have flowed out to the 1st preliminary vacuum cavity 111, only discharge remaining in the 2nd preliminary vacuum cavity 211 gas inside, thereby can shorten the vacuum formation time of the 2nd preliminary vacuum cavity 211 inside.
After forming the vacuum state of the 2nd preliminary vacuum cavity 211, gate valve 241 is by open, and the substrate of the 2nd preliminary vacuum cavity 211 is shifted into buffering cavity 212.
As above embodiment, when the 1st preliminary vacuum cavity 111 and the 2nd preliminary vacuum cavity 211 have the 1st pump housing 121 and the 2nd pump housing 221 respectively, the vacuum formation time of the 1st preliminary vacuum cavity 111 and the 2nd preliminary vacuum cavity 211 and the specific energy shortening mutually of the time of the vacuum state that forms the preliminary vacuum cavity respectively.
The shortening of the vacuum formation time of preliminary vacuum cavity can be shortened the overall operation time of substrate board treatment 1000, therefore can realize the more effective running of substrate board treatment 1000.
Then, the 2nd preliminary vacuum cavity 211 is in order to receive next substrate, and portion forms atmospheric pressure state within it, and the 1st preliminary vacuum cavity 111 substrate that it is inner is transplanted on after the buffering cavity 112, and portion forms vacuum state within it.
As mentioned above, extraneous gas is flowed into the step of the 1st preliminary vacuum cavity 111 inside and can carry out simultaneously to the step that residual gas in the 2nd preliminary vacuum cavity 211 is bled.
And, open equilibrium valve 150a and to after carrying out the vacuum tightness homogenizing between the 1st preliminary vacuum cavity 111 and the 2nd preliminary vacuum cavity 211, the 1st preliminary vacuum cavity 111 gas inside are bled and formed vacuum state, form atmospheric pressure state at the 2nd preliminary vacuum cavity 211 inner extraneous gass that flow into.
And, as mentioned above, the 1st operating line 100 and the 2nd operating line 200 be operation in regular turn not, but each operating line 100,200 is when moving respectively, can measure the poor of vacuum tightness between the 1st preliminary vacuum cavity 111 and the 2nd preliminary vacuum cavity 211, if should be poor, then between the 1st preliminary vacuum cavity 111 and the 2nd preliminary vacuum cavity 211, carry out the vacuum tightness homogenization step, thereby shorten the vacuum state formation time of preliminary vacuum cavity greater than set(ting)value.
Fig. 4 is the structural representation of substrate board treatment 2000 in another embodiment of the present invention.As shown in Figure 4, the pump portion of the substrate board treatment in the present embodiment 2000 can comprise and the 1st preliminary vacuum cavity 111,116 and the public pump housing 121,126 of the 2nd preliminary vacuum cavity 211,216 bonded.
Be provided with valve body 121a, 126b between equilibrium valve 131a, 136b, 231a, 236b and the public body 121,126, when the vacuum tightness homogenizing between realization the 1st preliminary vacuum cavity 111,116 and the 2nd preliminary vacuum cavity 211,216, can keep the resistance to air loss between the 1st preliminary vacuum cavity 111,116 and the 2nd preliminary vacuum cavity 211,216 and the public pump housing 121,126.
Between the 1st preliminary vacuum cavity 111,116 and the 2nd preliminary vacuum cavity 211,216, be provided with equilibrium valve 131a, 136b, 231a, 236b, realize the homogenizing of vacuum tightness each other by equilibrium valve 131a, 136b, 231a, 236b.
And, when the 1st operating line 100 and the 2nd operating line 200 move successively, a preliminary vacuum inside cavity in 121,126 pairs the 1st preliminary vacuum cavitys 111,116 of the public pump housing and the 2nd preliminary vacuum cavity 211,216 is carried out evacuation, therefore, the 1st preliminary vacuum cavity 111,116 and the 2nd preliminary vacuum cavity 211,216 can use a public pump housing 121,126 to form vacuum state respectively.
Thus, can reduce the pump housing quantity that is used for vacuum treatment installation 2000, therefore, vacuum treatment installation 2000 can be realized the thrifty of more effective operation and expense.
Fig. 5 is the structural representation of substrate board treatment 3000 in another embodiment of the present invention.As shown in Figure 5, the vacuum treatment installation in the present embodiment 3000 includes vacuum chamber 600a, the 600b that is arranged between the 1st preliminary vacuum cavity 111,116 and the 2nd preliminary vacuum cavity 211,216.
Vacuum chamber 600a, 600b have the public pump housing 121,126 or the other pump housing, have valve body 121a, 126b between public valve 131a, 136b, 231a, 236b and vacuum pump box 600a, 600b, thereby can keep its inner vacuum state.And vacuum chamber 600a, 600b can share the pump housing of the vacuum state that forms vacuum cavity.
For example, when the 1st preliminary vacuum cavity 111,116 is a vacuum state, the 2nd preliminary vacuum cavity 211,216 is an atmospheric pressure state, during the unripe formation atmospheric pressure state of the 1st preliminary vacuum cavity 111,116, can carry out homogenizing to the vacuum tightness between the 2nd preliminary vacuum cavity 211,216 and vacuum chamber 600a, the 600b.
Then, can homogenizing the 1st preliminary vacuum cavity 111,116 and the 2nd preliminary vacuum cavity 211,216 between vacuum tightness.In step before, the inside of the 2nd preliminary vacuum cavity 211,216 has formed the following pressure state of normal atmosphere, in this step, by with the vacuum tightness homogenizing of the 1st preliminary vacuum cavity 111,116 of vacuum state, can further reduce its internal pressure.
Thus, according to after the operation of the public pump housing 121,126 time of forming the vacuum state of the 2nd preliminary vacuum cavity 211,216 inside can further shorten.
Then, to the 1st preliminary vacuum cavity 111, the 116 inner extraneous gass that flow into, form atmospheric pressure state in the 1st preliminary vacuum inside cavity.
Fig. 6 is the structural representation of substrate board treatment 4000 in another embodiment of the present invention.As shown in Figure 6, the vacuum treatment installation in the present embodiment 4000 has vacuum chamber 602a, 602b, 604a, 604b and the pump housing 121,126,221,226 respectively on the 1st preliminary vacuum cavity 111,116 and the 2nd preliminary vacuum cavity 211,216.
For example, when the 1st preliminary vacuum cavity 111,116 is a vacuum state, the 2nd preliminary vacuum cavity 211,216 is an atmospheric pressure state, during the unripe formation atmospheric pressure state of the 1st preliminary vacuum cavity 111,116, can carry out homogenizing to the vacuum tightness between the 2nd preliminary vacuum cavity 211,216 and vacuum chamber 604a, the 604b earlier.
Then, can homogenizing the 1st preliminary vacuum cavity 111,116 and the 2nd preliminary vacuum cavity 211,216 between vacuum tightness.In step before, the inside of the 2nd preliminary vacuum cavity 211,216 has formed the following pressure state of normal atmosphere, in this step, by with the vacuum tightness homogenizing of the 1st preliminary vacuum cavity 111,116 of vacuum state, can further reduce its internal pressure.
Thus, when the 1st and the 2nd operating line 100,200 can't move successively, substrate board treatment 4000 in the present embodiment can be according to the situation of the 1st preliminary vacuum cavity 111,116 and the 2nd preliminary vacuum cavity 211,216, carries out the vacuum tightness homogenizing respectively and moves with separately vacuum chamber 602a, 602b, 604a, 604b.
And, in these cases, can omit carrying out the step of vacuum tightness homogenizing between the 1st preliminary vacuum cavity 111,116 and the 2nd preliminary vacuum cavity 211,216, at this moment, the 1st operating line 100 and the 2nd operating line 200 can independent operatings.
As mentioned above, most preferred embodiment of the present invention is illustrated, those skilled in the art can carry out various modifications and changes to the present invention by the content of putting down in writing in claims of the present invention in the scope that does not exceed inventive concept and technical field.
Claims (16)
1. a substrate board treatment is characterized in that, comprising:
A plurality of operating lines, it comprises the 1st preliminary vacuum cavity and the 2nd preliminary vacuum cavity that is arranged between vacuum cavity and the air respectively;
Pump portion is used to form the vacuum state of the 1st preliminary vacuum cavity and the 2nd preliminary vacuum inside cavity;
Equilibrium valve, it is arranged between the 1st preliminary vacuum cavity and the 2nd preliminary vacuum cavity, is used for the vacuum tightness between homogenizing the 1st preliminary vacuum cavity and the 2nd preliminary vacuum cavity.
2. substrate board treatment according to claim 1 is characterized in that, this pump portion comprises respectively and the 1st preliminary vacuum cavity and the 2nd preliminary vacuum cavity bonded the 1st pump housing and the 2nd pump housing.
3. substrate board treatment according to claim 1 is characterized in that, this pump portion comprises and the 1st preliminary vacuum cavity and the public pump housing of the 2nd preliminary vacuum cavity bonded.
4. substrate board treatment according to claim 1 is characterized in that, also comprises the vacuum chamber that is arranged between the 1st preliminary vacuum cavity and the 2nd preliminary vacuum cavity.
5. substrate board treatment according to claim 1 is characterized in that, the 1st preliminary vacuum cavity and the 2nd preliminary vacuum cavity are incorporated into the end of a plurality of these operating lines respectively.
6. according to each described substrate board treatment in the claim 1 to 5, it is characterized in that, communicating pores inwall on the 1st preliminary vacuum cavity and the sidewall that the 2nd preliminary vacuum cavity is connected is formed slopely, with the pressure of the gas that disperses to flow into the 1st preliminary vacuum cavity.
7. according to each described substrate board treatment in the claim 1 to 5, it is characterized in that, the 1st preliminary vacuum cavity comprises that an anti-current moves member, the moving member of this anti-current is incorporated into the communicating pores the place ahead on the 1st preliminary vacuum cavity and the sidewall that the 2nd preliminary vacuum cavity is connected, with the pressure of the gas of dispersion inflow the 1st preliminary vacuum cavity.
8. substrate board treatment according to claim 7 is characterized in that, the moving member of this anti-current is the plate type member that is arranged at this communicating pores the place ahead.
9. substrate board treatment according to claim 8 is characterized in that, the one side of the moving member of this anti-current is formed with flow orifice, is used for this gas flow.
10. substrate board treatment according to claim 9 is characterized in that, the moving member of this anti-current comprises a plurality of these plate type members.
11., it is characterized in that according to each described substrate board treatment in the claim 1 to 5, also comprise a filter house, be used for being captured in the particle of mobile gas between the 1st preliminary vacuum cavity and the 2nd preliminary vacuum cavity.
12. substrate board treatment according to claim 11 is characterized in that, this filter house is by providing magnetic force to gather this particle for this particle.
13. the vacuum formation method of a substrate board treatment, this substrate board treatment comprises: a plurality of operating lines, and it comprises the 1st preliminary vacuum cavity and the 2nd preliminary vacuum cavity that is arranged between vacuum cavity and the air respectively; Pump portion is used to form the vacuum state of the 1st preliminary vacuum cavity and the 2nd preliminary vacuum inside cavity, it is characterized in that this vacuum formation method comprises:
Homogenization step is carried out homogenizing to the vacuum tightness between the 2nd preliminary vacuum cavity of the 1st preliminary vacuum cavity of vacuum state and atmospheric pressure state;
Atmospheric pressure state forms step, forms atmospheric pressure state in the 1st preliminary vacuum inside cavity; And,
Vacuum state forms step, utilizes this pump portion to form vacuum state in the 2nd preliminary vacuum inside cavity.
14. the vacuum formation method of substrate board treatment according to claim 13, it is characterized in that, this substrate board treatment also comprises the 1st vacuum chamber that is arranged between the 1st preliminary vacuum cavity and the 2nd preliminary vacuum cavity, before this homogenization step, also comprise the step of the vacuum tightness between the 1st vacuum chamber and the 2nd preliminary vacuum cavity being carried out homogenizing.
15. the vacuum formation method of substrate board treatment according to claim 13, it is characterized in that, this substrate board treatment also comprises respectively at the 1st preliminary vacuum cavity and the 2nd preliminary vacuum cavity bonded 2-1 vacuum chamber and 2-2 vacuum chamber, before this homogenization step, this vacuum formation method also comprises the step of the vacuum tightness between this 2-2 vacuum chamber and the 2nd preliminary vacuum cavity being carried out homogenizing.
16. the vacuum formation method of substrate board treatment according to claim 13, it is characterized in that, before this homogenization step, the measuring process that also comprises the difference of the vacuum tightness between the 1st preliminary vacuum cavity and the 2nd preliminary vacuum cavity, when the difference of this vacuum tightness during, carry out this homogenization step greater than set(ting)value.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020090118802A KR20110062180A (en) | 2009-12-03 | 2009-12-03 | Apparatus for processing substrate and method for producing vacuum thereof |
| KR10-2009-0118802 | 2009-12-03 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102086512A true CN102086512A (en) | 2011-06-08 |
Family
ID=44098512
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010105327045A Pending CN102086512A (en) | 2009-12-03 | 2010-10-29 | Substrate processing apparatus and vacuum formation method thereof |
Country Status (2)
| Country | Link |
|---|---|
| KR (1) | KR20110062180A (en) |
| CN (1) | CN102086512A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102649509A (en) * | 2011-07-21 | 2012-08-29 | 北京京东方光电科技有限公司 | System and method for transmitting base plate |
| CN104928646A (en) * | 2015-04-28 | 2015-09-23 | 沈阳拓荆科技有限公司 | Double-layer loading chamber vacuum and atmosphere fast balancing structure |
| CN106399957A (en) * | 2016-05-27 | 2017-02-15 | 中国电子科技集团公司第四十八研究所 | Production type multi-target magnetron sputtering system for thin film hybrid integrated circuit |
| CN106399959A (en) * | 2016-05-27 | 2017-02-15 | 中国电子科技集团公司第四十八研究所 | Substrate loading and scanning mechanism for production type magnetron sputtering system |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002270663A (en) * | 2001-03-09 | 2002-09-20 | Daikin Ind Ltd | Load lock apparatus and method of operating the same |
| KR20030018491A (en) * | 2001-08-29 | 2003-03-06 | 삼성전자주식회사 | Apparatus for manufacturing semiconductor device having loadrock chamber |
-
2009
- 2009-12-03 KR KR1020090118802A patent/KR20110062180A/en not_active Application Discontinuation
-
2010
- 2010-10-29 CN CN2010105327045A patent/CN102086512A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002270663A (en) * | 2001-03-09 | 2002-09-20 | Daikin Ind Ltd | Load lock apparatus and method of operating the same |
| KR20030018491A (en) * | 2001-08-29 | 2003-03-06 | 삼성전자주식회사 | Apparatus for manufacturing semiconductor device having loadrock chamber |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102649509A (en) * | 2011-07-21 | 2012-08-29 | 北京京东方光电科技有限公司 | System and method for transmitting base plate |
| CN102649509B (en) * | 2011-07-21 | 2014-04-09 | 北京京东方光电科技有限公司 | System and method for transmitting base plate |
| CN104928646A (en) * | 2015-04-28 | 2015-09-23 | 沈阳拓荆科技有限公司 | Double-layer loading chamber vacuum and atmosphere fast balancing structure |
| WO2016173125A1 (en) * | 2015-04-28 | 2016-11-03 | 沈阳拓荆科技有限公司 | Structure for fast balancing pressure between vacuum and atmosphere for double-layer loading chamber |
| CN104928646B (en) * | 2015-04-28 | 2018-05-08 | 沈阳拓荆科技有限公司 | Two-layer equation load chamber vacuum and air Fast-Balance structure |
| CN106399957A (en) * | 2016-05-27 | 2017-02-15 | 中国电子科技集团公司第四十八研究所 | Production type multi-target magnetron sputtering system for thin film hybrid integrated circuit |
| CN106399959A (en) * | 2016-05-27 | 2017-02-15 | 中国电子科技集团公司第四十八研究所 | Substrate loading and scanning mechanism for production type magnetron sputtering system |
| CN106399957B (en) * | 2016-05-27 | 2019-01-08 | 中国电子科技集团公司第四十八研究所 | A kind of type of production multi-target magnetic control sputtering system for thin film hybrid IC |
| CN106399959B (en) * | 2016-05-27 | 2019-01-22 | 中国电子科技集团公司第四十八研究所 | A kind of substrate loading sweep mechanism for type of production magnetic control sputtering system |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20110062180A (en) | 2011-06-10 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN100429759C (en) | Substrate supporting unit, and substrate temperature control apparatus and method | |
| CN102086512A (en) | Substrate processing apparatus and vacuum formation method thereof | |
| CN101894781B (en) | Suspended floatation working platform | |
| KR20140148434A (en) | Shared gas panels in plasma processing systems | |
| CN201812803U (en) | Atmospheric transmission unit and wafer transmission system with the same | |
| CN105336652A (en) | Silicon wafer transmission control method and system | |
| KR20150003412A (en) | Rapid suction-based filtering device | |
| CN111653513A (en) | Wafer bearing device and exposure equipment | |
| WO2004079496A3 (en) | System for fabricating electrical circuits employing a fluid flow supporter | |
| CN107369600A (en) | A kind of vacuum board | |
| CN204921369U (en) | Vacuum unit that many vacuums are adjustable | |
| EP1895712A3 (en) | System for monitoring the state of apparatuses in a communication network | |
| CN101740448B (en) | Plasma processing equipment and substrate support plate thereof | |
| CN102012646B (en) | Leveling system of photoetching machine | |
| CN105990184B (en) | Semiconductor manufacturing process equipment and method for preventing fragments | |
| CN103943534A (en) | Gas intake system and substrate processing equipment | |
| TW200736384A (en) | Cleaning liquid and cleaning method | |
| CN202144891U (en) | Backflow prevention device and exhaust device | |
| CN106298583A (en) | Process chamber, process chamber and vacuum lock combination and substrate handling system | |
| CN208352277U (en) | A kind of sapphire chip IC P charging equipment | |
| CN217507267U (en) | Semiconductor processing technology chamber and semiconductor processing device | |
| CN216624234U (en) | Vacuum gas circuit structure of HARP equipment | |
| KR20030091702A (en) | Semiconductor manufacturing device | |
| CN207865030U (en) | A kind of sulfur hexafluoride air accumulator quantifies ancillary equipment | |
| CN210837667U (en) | Semiconductor etching device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20110608 |