CN102084028B - 在化学气相沉积反应器中用于管丝的夹头及电桥的连接点 - Google Patents

在化学气相沉积反应器中用于管丝的夹头及电桥的连接点 Download PDF

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Publication number
CN102084028B
CN102084028B CN200980123874.3A CN200980123874A CN102084028B CN 102084028 B CN102084028 B CN 102084028B CN 200980123874 A CN200980123874 A CN 200980123874A CN 102084028 B CN102084028 B CN 102084028B
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China
Prior art keywords
chuck
pipe silk
electric bridge
silk
pipe
Prior art date
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Expired - Fee Related
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CN200980123874.3A
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English (en)
Chinese (zh)
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CN102084028A (zh
Inventor
杰弗里·C·噶姆
基斯·巴伦杰
卡尔·查捷
安迪·施韦因
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GTAT Corp
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GT SOLAR Inc
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49826—Assembling or joining
    • Y10T29/49885—Assembling or joining with coating before or during assembling

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Silicon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
CN200980123874.3A 2008-06-23 2009-06-23 在化学气相沉积反应器中用于管丝的夹头及电桥的连接点 Expired - Fee Related CN102084028B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US7482408P 2008-06-23 2008-06-23
US61/074,824 2008-06-23
PCT/US2009/003763 WO2010008477A2 (en) 2008-06-23 2009-06-23 Chuck and bridge connection points for tube filaments in a chemical vapor deposition reactor

Publications (2)

Publication Number Publication Date
CN102084028A CN102084028A (zh) 2011-06-01
CN102084028B true CN102084028B (zh) 2014-04-16

Family

ID=41017067

Family Applications (1)

Application Number Title Priority Date Filing Date
CN200980123874.3A Expired - Fee Related CN102084028B (zh) 2008-06-23 2009-06-23 在化学气相沉积反应器中用于管丝的夹头及电桥的连接点

Country Status (10)

Country Link
US (1) US20110203101A1 (enExample)
EP (1) EP2321446B1 (enExample)
JP (1) JP5636365B2 (enExample)
KR (1) KR101543010B1 (enExample)
CN (1) CN102084028B (enExample)
ES (1) ES2636966T3 (enExample)
MY (1) MY157446A (enExample)
RU (1) RU2011102451A (enExample)
TW (1) TWI458854B (enExample)
WO (1) WO2010008477A2 (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10494714B2 (en) 2011-01-03 2019-12-03 Oci Company Ltd. Chuck for chemical vapor deposition systems and related methods therefor
US9102035B2 (en) * 2012-03-12 2015-08-11 MEMC Electronics Materials S.p.A. Method for machining seed rods for use in a chemical vapor deposition polysilicon reactor
DE102013215093A1 (de) * 2013-08-01 2015-02-05 Wacker Chemie Ag Trägerkörper für die Abscheidung von polykristallinem Silicium
KR101590607B1 (ko) * 2013-11-20 2016-02-01 한화케미칼 주식회사 폴리실리콘 제조 장치
TW201531440A (zh) * 2013-12-30 2015-08-16 Hemlock Semiconductor Corp 用於耦合至設置在反應器內之電極上之插座以生長多晶矽的載體
DE102014200058A1 (de) * 2014-01-07 2015-07-09 Wacker Chemie Ag Vorrichtung zum Aufnehmen und Transport eines Siliciumstabs sowie Verfahren zur Herstellung von polykristallinem Silicium
US10450649B2 (en) * 2014-01-29 2019-10-22 Gtat Corporation Reactor filament assembly with enhanced misalignment tolerance
US9254470B1 (en) * 2014-10-10 2016-02-09 Rec Silicon Inc Segmented liner and transition support ring for use in a fluidized bed reactor
WO2017087293A1 (en) 2015-11-16 2017-05-26 Gtat Corporation Chemical vapor deposition method and apparatus
US20180086044A1 (en) * 2016-09-23 2018-03-29 Oci Company Ltd. Apparatus and method for separating polysilicon-carbon chuck
US20180308661A1 (en) * 2017-04-24 2018-10-25 Applied Materials, Inc. Plasma reactor with electrode filaments
KR101901356B1 (ko) 2018-03-23 2018-09-28 그린스펙(주) 열 필라멘트 화학기상증착 장치의 열 필라멘트 텐션 유지 장치
KR102781762B1 (ko) * 2019-06-17 2025-03-18 가부시끼가이샤 도꾸야마 실리콘 로드의 보호 구조체 및 실리콘 로드의 제조 방법

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6284312B1 (en) * 1999-02-19 2001-09-04 Gt Equipment Technologies Inc Method and apparatus for chemical vapor deposition of polysilicon
US6676916B2 (en) * 2001-11-30 2004-01-13 Advanced Silicon Materials Llc Method for inducing controlled cleavage of polycrystalline silicon rod

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2805565A (en) * 1954-03-29 1957-09-10 Racek Alfred Pyrophoric lighter
US2805556A (en) * 1955-11-22 1957-09-10 Wang Wensan Pocket liquid cooling device
US3635757A (en) * 1965-07-29 1972-01-18 Monsanto Co Epitaxial deposition method
US3647530A (en) * 1969-11-13 1972-03-07 Texas Instruments Inc Production of semiconductor material
DE2050076C3 (de) * 1970-10-12 1980-06-26 Siemens Ag, 1000 Berlin Und 8000 Muenchen Vorrichtung zum Herstellen von Rohren aus Halbleitermaterial
DE2541215C3 (de) * 1975-09-16 1978-08-03 Wacker-Chemitronic Gesellschaft Fuer Elektronik-Grundstoffe Mbh, 8263 Burghausen Verfahren zur Herstellung von Siliciumhohlkörpern
JPS53106626A (en) * 1977-03-02 1978-09-16 Komatsu Mfg Co Ltd Method of making high purity rod silicon and appratus therefor
US4173944A (en) * 1977-05-20 1979-11-13 Wacker-Chemitronic Gesellschaft Fur Elektronik-Grundstoffe Mbh Silverplated vapor deposition chamber
EP0045191A1 (en) * 1980-07-28 1982-02-03 Monsanto Company Process and apparatus for the production of semiconductor bodies
US4805556A (en) * 1988-01-15 1989-02-21 Union Carbide Corporation Reactor system and method for forming uniformly large-diameter polycrystalline rods by the pyrolysis of silane
JPH0729874B2 (ja) * 1989-11-04 1995-04-05 コマツ電子金属株式会社 多結晶シリコン製造装置の芯線間接続用ブリッジ
IT1246772B (it) 1989-12-26 1994-11-26 Advanced Silicon Materials Inc ''mandrino di grafite avente uno strato esterno di rivestimento __impermeabile all'idrogeno''
DE69208303D1 (de) 1991-08-29 1996-03-28 Ucar Carbon Tech Mit glasigem Kohlenstoff überzogene Graphit-Spannvorrichtung zum Gebrauch bei der Erzeugung von polykristallinem Silizium
DE10101040A1 (de) * 2001-01-11 2002-07-25 Wacker Chemie Gmbh Vorrichtung und Verfahren zur Herstellung eines polykristallinen Siliciumstabes
US9683286B2 (en) * 2006-04-28 2017-06-20 Gtat Corporation Increased polysilicon deposition in a CVD reactor
CN102047066B (zh) * 2008-04-14 2013-01-16 赫姆洛克半导体公司 用于沉积材料的制造设备和其中使用的电极
DE102010003064A1 (de) * 2010-03-19 2011-09-22 Wacker Chemie Ag Graphitelektrode

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6284312B1 (en) * 1999-02-19 2001-09-04 Gt Equipment Technologies Inc Method and apparatus for chemical vapor deposition of polysilicon
US6676916B2 (en) * 2001-11-30 2004-01-13 Advanced Silicon Materials Llc Method for inducing controlled cleavage of polycrystalline silicon rod

Also Published As

Publication number Publication date
RU2011102451A (ru) 2012-07-27
WO2010008477A3 (en) 2010-06-03
KR20110081934A (ko) 2011-07-15
EP2321446A2 (en) 2011-05-18
CN102084028A (zh) 2011-06-01
JP2011525472A (ja) 2011-09-22
KR101543010B1 (ko) 2015-08-07
ES2636966T3 (es) 2017-10-10
TWI458854B (zh) 2014-11-01
JP5636365B2 (ja) 2014-12-03
WO2010008477A2 (en) 2010-01-21
US20110203101A1 (en) 2011-08-25
MY157446A (en) 2016-06-15
TW201009111A (en) 2010-03-01
EP2321446B1 (en) 2017-05-10

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Owner name: GTAT CORPORATION

Free format text: FORMER NAME: GT SOLAR INC.

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Granted publication date: 20140416

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CF01 Termination of patent right due to non-payment of annual fee