CN102071328A - Method for purifying defective gallium produced by resin adsorption method - Google Patents

Method for purifying defective gallium produced by resin adsorption method Download PDF

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Publication number
CN102071328A
CN102071328A CN201010579819XA CN201010579819A CN102071328A CN 102071328 A CN102071328 A CN 102071328A CN 201010579819X A CN201010579819X A CN 201010579819XA CN 201010579819 A CN201010579819 A CN 201010579819A CN 102071328 A CN102071328 A CN 102071328A
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China
Prior art keywords
gallium
substandard products
purification
resin adsorption
xln
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CN201010579819XA
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Chinese (zh)
Inventor
许富军
芦东
黄昕明
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Aluminum Corp of China Ltd
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Aluminum Corp of China Ltd
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Priority to CN201010579819XA priority Critical patent/CN102071328A/en
Publication of CN102071328A publication Critical patent/CN102071328A/en
Pending legal-status Critical Current

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    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P10/00Technologies related to metal processing
    • Y02P10/20Recycling

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Abstract

The invention relates to a method for purifying defective gallium produced by a resin adsorption method, which is characterized in that: crystallization purification is performed by a metal remelting crystallization method in the treatment process. Compared with the prior art, the method for purifying the defective gallium produced by the resin adsorption method is easy to operate and practicable, effectively reduces cost, effectively solves the problem of the defective gallium, and increases the yield of gallium.

Description

The method of purification of the substandard products gallium that a kind of resin adsorption method is produced
Technical field
The present invention relates to a kind of method of purification of substandard products gallium of resin adsorption method production.
Background technology
In the gallium production process, occurring substandard products once in a while can not avoid.Substandard products generally are to produce in the gallium technology at resin adsorption method not remove thoroughly except that heavy link lead, copper, and lead, copper exceed standard in the finished product thereby cause.Treatment process is to utilize the true tube furnace of open type to purify at present, the method of purification process is that the substandard products gallium is put into stove, in vacuum environment, be heated to about 2400 ℃, make gallium volatilization the becoming gaseous state in the solid-state substandard products gallium, extract the gaseous state gallium out again with its condensation, again become solid-stately or liquid, reach the purpose of purification with the physical property of utilizing the gallium boiling point.Can see that from above technological process its energy consumption is very high, and consuming time very long, and the expense costliness increases the gallium production cost.
Summary of the invention
Purpose of the present invention is exactly the deficiency that exists at above-mentioned prior art, the method for purification of the substandard products gallium that the resin adsorption method that provide a kind of and effectively cut down the consumption of energy, reduces production costs, refining effect is good is produced.
The objective of the invention is to be achieved through the following technical solutions.
The method of purification of the substandard products gallium that a kind of resin adsorption method is produced is characterized in that its treating processes adopts metal remelting crystalline method to carry out crystallization and purification.
The method of purification of the substandard products gallium that a kind of resin adsorption method of the present invention is produced is characterized in that the step of purification process comprises:
1) the substandard products gallium is dissolved 35 ℃-40 ℃ temperature;
2) gallium after will dissolving is freezing in-5 ℃-0 ℃ refrigerator-freezer, placed 1 hour, take out xln, to be crystallized getting after rolling, be reentered into refrigerator-freezer freezing 1 hour, and took out container again, continue to get xln, xln weight to be removed is two of gross weight/for the moment, with the substandard products gallium of remainder again at 35 ℃--dissolve under 40 ℃ of temperature;
3) operation of repeating step (2), taking out total amount to crystallization is 95% of substandard products gallium, is the gallium after purifying.
The method of purification of the substandard products gallium that a kind of resin adsorption method of the present invention is produced, the taking-up amount that it is characterized in that xln is 95% of a substandard products total amount
The method of purification of the substandard products gallium that a kind of resin adsorption method of the present invention is produced, compared with prior art operation is simple, reduced cost effectively, efficiently solves substandard products gallium problem, increased the yield rate of gallium.
Description of drawings
Fig. 1 is the process flow sheet of the inventive method.
Embodiment
The method of purification of the substandard products gallium that a kind of resin adsorption method is produced, its treating processes adopt metal remelting crystalline principle to carry out crystallization and purification, and the concrete operations step comprises: 1) with the substandard products gallium at 35 ℃--40 ℃ temperature is dissolved; 2) gallium after will dissolving is freezing in-5 ℃-0 ℃ refrigerator-freezer, placed 1 hour, take out xln, to be crystallized getting after rolling, be reentered into refrigerator-freezer freezing 1 hour, and took out container again, continue to get xln, xln weight to be removed is two of gross weight/for the moment, with the substandard products gallium of remainder again at 35 ℃--dissolve under 40 ℃ of temperature; 3) operation of repeating step (2), taking out total amount to crystallization is 95% of substandard products gallium, is the gallium after purifying.
Embodiment 1
Existing substandard products gallium 20 kg, place it in 35 ℃ Wen Du Xia Rongization, to finish the dissolved gallium puts into refrigerator-freezer and is in about 0 ℃, placed 1 hour, take out xln totally 5 kg, be reentered into refrigerator-freezer afterwards freezing 1 hour, continue to take out xln 5 kg, the substandard products gallium of remainder is reapposed 35 ℃ of Huan Jing Zhong Rongization 2 hours, treats that remaining substandard products no longer include to repeat above operation after the crystallization, repeated five circulations after, take out crystal 19 kg altogether, residual 1 kg substandard products are chemically examined the crystal that takes out, and learn that lead, copper are 10ppm.
Embodiment 2
Existing substandard products gallium 30 kg, place it in 40 ℃ Wen Du Xia Rongization, to finish the dissolved gallium puts into refrigerator-freezer and is in about-2 ℃, placed 1 hour, take out xln 7kg altogether, be reentered into refrigerator-freezer afterwards freezing 1 hour, continue to take out xln 8kg, the substandard products gallium of remainder is reapposed 40 ℃ of Huan Jing Zhong Rongization 2 hours, treats that remaining substandard products no longer include to repeat above operation after the crystallization, repeated five circulations after, take out crystal 2 8.5kg altogether, residual 1.5 kg substandard products are chemically examined the crystal that takes out, and learn that lead, copper are 9ppm.
Embodiment 3
Existing substandard products gallium 40 kg, place it in 40 ℃ Wen Du Xia Rongization, to finish the dissolved gallium puts into refrigerator-freezer and is in about-5 ℃, placed 1 hour, take out xln 10kg altogether, be reentered into refrigerator-freezer afterwards freezing 1 hour, continue to take out xln 10kg, the substandard products gallium of remainder is reapposed 40 ℃ of Huan Jing Zhong Rongization 2 hours, treats that remaining substandard products no longer include to repeat above operation after the crystallization, repeated six circulations after, take out crystal 3 8kg altogether, residual 2 kg substandard products are chemically examined the crystal that takes out, and learn that lead, copper are 9ppm.

Claims (3)

1. the method for purification of the substandard products gallium of a resin adsorption method production is characterized in that its treating processes adopts metal remelting crystalline method to carry out crystallization and purification.
2. the method for purification of the substandard products gallium that a kind of resin adsorption method according to claim 1 is produced is characterized in that the step of purification process comprises:
1) with the substandard products gallium at 35 ℃--40 ℃ temperature is dissolved;
2) gallium after will dissolving is freezing in-5 ℃-0 ℃ refrigerator-freezer, placed 1 hour, take out xln, to be crystallized getting after rolling, be reentered into refrigerator-freezer freezing 1 hour, and took out container again, continue to get xln, xln weight to be removed is two of gross weight/for the moment, with the substandard products gallium of remainder again at 35 ℃--dissolve under 40 ℃ of temperature;
3) operation of repeating step (2), taking out total amount to crystallization is 95% of substandard products gallium, is the gallium after purifying.
3. the method for purification of the substandard products gallium that a kind of resin adsorption method according to claim 1 is produced, the taking-up amount that it is characterized in that xln is 95% of a substandard products total amount.
CN201010579819XA 2010-12-09 2010-12-09 Method for purifying defective gallium produced by resin adsorption method Pending CN102071328A (en)

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CN201010579819XA CN102071328A (en) 2010-12-09 2010-12-09 Method for purifying defective gallium produced by resin adsorption method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201010579819XA CN102071328A (en) 2010-12-09 2010-12-09 Method for purifying defective gallium produced by resin adsorption method

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CN102071328A true CN102071328A (en) 2011-05-25

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103031450A (en) * 2012-12-28 2013-04-10 北京吉亚半导体材料有限公司 Purification method for gallium

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN88103282A (en) * 1987-06-02 1988-12-21 皮奇尼铅公司 The method of extraction and gallium-purifying from Bayer-liquid
CN1039064A (en) * 1988-07-01 1990-01-24 皮奇尼铝公司 Method by the partial coagulation gallium-purifying
CN1454706A (en) * 2003-04-22 2003-11-12 万荣联丰特种树脂材料有限公司 Chelating resin special for adsorbing gallium and preparing method thereof
CN1912153A (en) * 2006-08-25 2007-02-14 山东铝业股份有限公司 Method for extracting metallic gallium from aluminium oxide production procedure
CN101597699A (en) * 2008-06-02 2009-12-09 冯峰 From seed precipitation solution, extract the ion exchange method of gallium

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN88103282A (en) * 1987-06-02 1988-12-21 皮奇尼铅公司 The method of extraction and gallium-purifying from Bayer-liquid
CN1039064A (en) * 1988-07-01 1990-01-24 皮奇尼铝公司 Method by the partial coagulation gallium-purifying
CN1454706A (en) * 2003-04-22 2003-11-12 万荣联丰特种树脂材料有限公司 Chelating resin special for adsorbing gallium and preparing method thereof
CN1912153A (en) * 2006-08-25 2007-02-14 山东铝业股份有限公司 Method for extracting metallic gallium from aluminium oxide production procedure
CN101597699A (en) * 2008-06-02 2009-12-09 冯峰 From seed precipitation solution, extract the ion exchange method of gallium

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103031450A (en) * 2012-12-28 2013-04-10 北京吉亚半导体材料有限公司 Purification method for gallium
CN103031450B (en) * 2012-12-28 2015-08-19 北京吉亚半导体材料有限公司 A kind of method of purification of gallium

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Application publication date: 20110525