CN102071328A - Method for purifying defective gallium produced by resin adsorption method - Google Patents
Method for purifying defective gallium produced by resin adsorption method Download PDFInfo
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- CN102071328A CN102071328A CN201010579819XA CN201010579819A CN102071328A CN 102071328 A CN102071328 A CN 102071328A CN 201010579819X A CN201010579819X A CN 201010579819XA CN 201010579819 A CN201010579819 A CN 201010579819A CN 102071328 A CN102071328 A CN 102071328A
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- Prior art keywords
- gallium
- substandard products
- purification
- resin adsorption
- xln
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 title claims abstract description 50
- 229910052733 gallium Inorganic materials 0.000 title claims abstract description 50
- 238000000034 method Methods 0.000 title claims abstract description 40
- 239000011347 resin Substances 0.000 title claims abstract description 15
- 229920005989 resin Polymers 0.000 title claims abstract description 15
- 238000001179 sorption measurement Methods 0.000 title claims abstract description 15
- 230000002950 deficient Effects 0.000 title abstract 4
- 238000000746 purification Methods 0.000 claims abstract description 19
- 238000002425 crystallisation Methods 0.000 claims abstract description 11
- 230000008025 crystallization Effects 0.000 claims abstract description 10
- 229910052751 metal Inorganic materials 0.000 claims abstract description 4
- 239000002184 metal Substances 0.000 claims abstract description 4
- 238000007710 freezing Methods 0.000 claims description 9
- 230000008014 freezing Effects 0.000 claims description 9
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 238000005096 rolling process Methods 0.000 claims description 3
- 239000013078 crystal Substances 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 5
- 239000010949 copper Substances 0.000 description 5
- 230000004087 circulation Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 239000011133 lead Substances 0.000 description 2
- 238000009835 boiling Methods 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000007670 refining Methods 0.000 description 1
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P10/00—Technologies related to metal processing
- Y02P10/20—Recycling
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- Manufacture And Refinement Of Metals (AREA)
Abstract
The invention relates to a method for purifying defective gallium produced by a resin adsorption method, which is characterized in that: crystallization purification is performed by a metal remelting crystallization method in the treatment process. Compared with the prior art, the method for purifying the defective gallium produced by the resin adsorption method is easy to operate and practicable, effectively reduces cost, effectively solves the problem of the defective gallium, and increases the yield of gallium.
Description
Technical field
The present invention relates to a kind of method of purification of substandard products gallium of resin adsorption method production.
Background technology
In the gallium production process, occurring substandard products once in a while can not avoid.Substandard products generally are to produce in the gallium technology at resin adsorption method not remove thoroughly except that heavy link lead, copper, and lead, copper exceed standard in the finished product thereby cause.Treatment process is to utilize the true tube furnace of open type to purify at present, the method of purification process is that the substandard products gallium is put into stove, in vacuum environment, be heated to about 2400 ℃, make gallium volatilization the becoming gaseous state in the solid-state substandard products gallium, extract the gaseous state gallium out again with its condensation, again become solid-stately or liquid, reach the purpose of purification with the physical property of utilizing the gallium boiling point.Can see that from above technological process its energy consumption is very high, and consuming time very long, and the expense costliness increases the gallium production cost.
Summary of the invention
Purpose of the present invention is exactly the deficiency that exists at above-mentioned prior art, the method for purification of the substandard products gallium that the resin adsorption method that provide a kind of and effectively cut down the consumption of energy, reduces production costs, refining effect is good is produced.
The objective of the invention is to be achieved through the following technical solutions.
The method of purification of the substandard products gallium that a kind of resin adsorption method is produced is characterized in that its treating processes adopts metal remelting crystalline method to carry out crystallization and purification.
The method of purification of the substandard products gallium that a kind of resin adsorption method of the present invention is produced is characterized in that the step of purification process comprises:
1) the substandard products gallium is dissolved 35 ℃-40 ℃ temperature;
2) gallium after will dissolving is freezing in-5 ℃-0 ℃ refrigerator-freezer, placed 1 hour, take out xln, to be crystallized getting after rolling, be reentered into refrigerator-freezer freezing 1 hour, and took out container again, continue to get xln, xln weight to be removed is two of gross weight/for the moment, with the substandard products gallium of remainder again at 35 ℃--dissolve under 40 ℃ of temperature;
3) operation of repeating step (2), taking out total amount to crystallization is 95% of substandard products gallium, is the gallium after purifying.
The method of purification of the substandard products gallium that a kind of resin adsorption method of the present invention is produced, the taking-up amount that it is characterized in that xln is 95% of a substandard products total amount
The method of purification of the substandard products gallium that a kind of resin adsorption method of the present invention is produced, compared with prior art operation is simple, reduced cost effectively, efficiently solves substandard products gallium problem, increased the yield rate of gallium.
Description of drawings
Fig. 1 is the process flow sheet of the inventive method.
Embodiment
The method of purification of the substandard products gallium that a kind of resin adsorption method is produced, its treating processes adopt metal remelting crystalline principle to carry out crystallization and purification, and the concrete operations step comprises: 1) with the substandard products gallium at 35 ℃--40 ℃ temperature is dissolved; 2) gallium after will dissolving is freezing in-5 ℃-0 ℃ refrigerator-freezer, placed 1 hour, take out xln, to be crystallized getting after rolling, be reentered into refrigerator-freezer freezing 1 hour, and took out container again, continue to get xln, xln weight to be removed is two of gross weight/for the moment, with the substandard products gallium of remainder again at 35 ℃--dissolve under 40 ℃ of temperature; 3) operation of repeating step (2), taking out total amount to crystallization is 95% of substandard products gallium, is the gallium after purifying.
Embodiment 1
Existing substandard products gallium 20 kg, place it in 35 ℃ Wen Du Xia Rongization, to finish the dissolved gallium puts into refrigerator-freezer and is in about 0 ℃, placed 1 hour, take out xln totally 5 kg, be reentered into refrigerator-freezer afterwards freezing 1 hour, continue to take out xln 5 kg, the substandard products gallium of remainder is reapposed 35 ℃ of Huan Jing Zhong Rongization 2 hours, treats that remaining substandard products no longer include to repeat above operation after the crystallization, repeated five circulations after, take out crystal 19 kg altogether, residual 1 kg substandard products are chemically examined the crystal that takes out, and learn that lead, copper are 10ppm.
Embodiment 2
Existing substandard products gallium 30 kg, place it in 40 ℃ Wen Du Xia Rongization, to finish the dissolved gallium puts into refrigerator-freezer and is in about-2 ℃, placed 1 hour, take out xln 7kg altogether, be reentered into refrigerator-freezer afterwards freezing 1 hour, continue to take out xln 8kg, the substandard products gallium of remainder is reapposed 40 ℃ of Huan Jing Zhong Rongization 2 hours, treats that remaining substandard products no longer include to repeat above operation after the crystallization, repeated five circulations after, take out crystal 2 8.5kg altogether, residual 1.5 kg substandard products are chemically examined the crystal that takes out, and learn that lead, copper are 9ppm.
Embodiment 3
Existing substandard products gallium 40 kg, place it in 40 ℃ Wen Du Xia Rongization, to finish the dissolved gallium puts into refrigerator-freezer and is in about-5 ℃, placed 1 hour, take out xln 10kg altogether, be reentered into refrigerator-freezer afterwards freezing 1 hour, continue to take out xln 10kg, the substandard products gallium of remainder is reapposed 40 ℃ of Huan Jing Zhong Rongization 2 hours, treats that remaining substandard products no longer include to repeat above operation after the crystallization, repeated six circulations after, take out crystal 3 8kg altogether, residual 2 kg substandard products are chemically examined the crystal that takes out, and learn that lead, copper are 9ppm.
Claims (3)
1. the method for purification of the substandard products gallium of a resin adsorption method production is characterized in that its treating processes adopts metal remelting crystalline method to carry out crystallization and purification.
2. the method for purification of the substandard products gallium that a kind of resin adsorption method according to claim 1 is produced is characterized in that the step of purification process comprises:
1) with the substandard products gallium at 35 ℃--40 ℃ temperature is dissolved;
2) gallium after will dissolving is freezing in-5 ℃-0 ℃ refrigerator-freezer, placed 1 hour, take out xln, to be crystallized getting after rolling, be reentered into refrigerator-freezer freezing 1 hour, and took out container again, continue to get xln, xln weight to be removed is two of gross weight/for the moment, with the substandard products gallium of remainder again at 35 ℃--dissolve under 40 ℃ of temperature;
3) operation of repeating step (2), taking out total amount to crystallization is 95% of substandard products gallium, is the gallium after purifying.
3. the method for purification of the substandard products gallium that a kind of resin adsorption method according to claim 1 is produced, the taking-up amount that it is characterized in that xln is 95% of a substandard products total amount.
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CN201010579819XA CN102071328A (en) | 2010-12-09 | 2010-12-09 | Method for purifying defective gallium produced by resin adsorption method |
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CN201010579819XA CN102071328A (en) | 2010-12-09 | 2010-12-09 | Method for purifying defective gallium produced by resin adsorption method |
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CN201010579819XA Pending CN102071328A (en) | 2010-12-09 | 2010-12-09 | Method for purifying defective gallium produced by resin adsorption method |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103031450A (en) * | 2012-12-28 | 2013-04-10 | 北京吉亚半导体材料有限公司 | Purification method for gallium |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN88103282A (en) * | 1987-06-02 | 1988-12-21 | 皮奇尼铅公司 | The method of extraction and gallium-purifying from Bayer-liquid |
CN1039064A (en) * | 1988-07-01 | 1990-01-24 | 皮奇尼铝公司 | Method by the partial coagulation gallium-purifying |
CN1454706A (en) * | 2003-04-22 | 2003-11-12 | 万荣联丰特种树脂材料有限公司 | Chelating resin special for adsorbing gallium and preparing method thereof |
CN1912153A (en) * | 2006-08-25 | 2007-02-14 | 山东铝业股份有限公司 | Method for extracting metallic gallium from aluminium oxide production procedure |
CN101597699A (en) * | 2008-06-02 | 2009-12-09 | 冯峰 | From seed precipitation solution, extract the ion exchange method of gallium |
-
2010
- 2010-12-09 CN CN201010579819XA patent/CN102071328A/en active Pending
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN88103282A (en) * | 1987-06-02 | 1988-12-21 | 皮奇尼铅公司 | The method of extraction and gallium-purifying from Bayer-liquid |
CN1039064A (en) * | 1988-07-01 | 1990-01-24 | 皮奇尼铝公司 | Method by the partial coagulation gallium-purifying |
CN1454706A (en) * | 2003-04-22 | 2003-11-12 | 万荣联丰特种树脂材料有限公司 | Chelating resin special for adsorbing gallium and preparing method thereof |
CN1912153A (en) * | 2006-08-25 | 2007-02-14 | 山东铝业股份有限公司 | Method for extracting metallic gallium from aluminium oxide production procedure |
CN101597699A (en) * | 2008-06-02 | 2009-12-09 | 冯峰 | From seed precipitation solution, extract the ion exchange method of gallium |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103031450A (en) * | 2012-12-28 | 2013-04-10 | 北京吉亚半导体材料有限公司 | Purification method for gallium |
CN103031450B (en) * | 2012-12-28 | 2015-08-19 | 北京吉亚半导体材料有限公司 | A kind of method of purification of gallium |
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Application publication date: 20110525 |